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Effect of damage by 2-MeV He ions and annealing on Hc2 in MgB2 thin films
Authors:
R. Gandikota,
R. K. Singh,
J. Kim,
B. Wilkens,
N. Newman,
J. M. Rowell,
A. V. Pogrebnyakov,
X. X. Xi,
J. M. Redwing,
S. Y. Xu,
Qi Li,
B. H. Moeckly
Abstract:
The effect of damage induced by 2-MeV alpha particles, followed by annealing, on the critical temperature (Tc), resistivity, and upper critical field (Hc2), of three MgB2 films made by different deposition processes has been studied. Damage creates a linear decrease in Tc with residual resistivity, and produces maxima in both Hc2(0)-perpendicular and Hc2(0)-parallel. Below Tcs of about 25 K, Hc2…
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The effect of damage induced by 2-MeV alpha particles, followed by annealing, on the critical temperature (Tc), resistivity, and upper critical field (Hc2), of three MgB2 films made by different deposition processes has been studied. Damage creates a linear decrease in Tc with residual resistivity, and produces maxima in both Hc2(0)-perpendicular and Hc2(0)-parallel. Below Tcs of about 25 K, Hc2(0) depends roughly linearly on Tc, while the anisotropy of Hc2(0) decreases as Tc decreases. Annealing the films reproduces the Tc vs. residual resistivity dependence but not the Hc2(0) values induced by damage.
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Submitted 31 March, 2005;
originally announced March 2005.
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Electron diffusivities in MgB2 from point contact spectroscopy
Authors:
Y. Bugoslavsky,
Y. Miyoshi,
G. K. Perkins,
A. D. Caplin,
L. F. Cohen,
A. V. Pogrebnyakov,
X. X. Xi
Abstract:
We demonstrate that the variation of the Andreev reflection with applied magnetic field provides a direct means of comparing the properties of MgB2 with the theory for a dirty two-band superconductor, and we find good agreement between the two. The ratio of electron diffusivities in the s and p bands can be inferred from this experiment. We find that the field dependence of the density of states…
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We demonstrate that the variation of the Andreev reflection with applied magnetic field provides a direct means of comparing the properties of MgB2 with the theory for a dirty two-band superconductor, and we find good agreement between the two. The ratio of electron diffusivities in the s and p bands can be inferred from this experiment. We find that the field dependence of the density of states at the Fermi level in the p band is independent of the field direction, and that the anisotropic upper critical field is determined by the anisotropic diffusivity in the s band.
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Submitted 5 February, 2005;
originally announced February 2005.
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Effect of damage by 2-MeV He ions on the normal and superconducting properties of magnesium diboride
Authors:
R. Gandikota,
R. K. Singh,
J. Kim,
B. Wilkens,
N. Newman,
J. M. Rowell,
A. V. Pogrebnyakov,
X. X. Xi,
J. M. Redwing,
S. Y. Xu,
Qi Li
Abstract:
We have studied the effect of damage induced by 2-MeV alpha particles on the critical temperature, Tc, and resistivity of MgB2 thin films. This technique allows defects to be controllably introduced into MgB2 in small successive steps. Tc decreases linearly as the intragrain resistivity at 40 K increases, while the intergrain connectivity is not changed. Tc is ultimately reduced to less than 7 K…
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We have studied the effect of damage induced by 2-MeV alpha particles on the critical temperature, Tc, and resistivity of MgB2 thin films. This technique allows defects to be controllably introduced into MgB2 in small successive steps. Tc decreases linearly as the intragrain resistivity at 40 K increases, while the intergrain connectivity is not changed. Tc is ultimately reduced to less than 7 K and we see no evidence for a saturation of Tc at about 20 K, contrary to the predictions of the Tc of MgB2 in the dirty limit of interband scattering.
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Submitted 26 October, 2004; v1 submitted 25 October, 2004;
originally announced October 2004.
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Electron scattering dependence of dendritic magnetic instability in superconducting MgB2 films
Authors:
Z. X. Ye,
Qiang Li,
Y. F. Hu,
A. V. Pogrebnyakov,
Y. Cui,
X. X. Xi,
J. M. Redwing,
Qi Li
Abstract:
Magnetic instability in both ultra-pure and carbon-doped MgB2 films is investigated by magneto-optical imaging, transport and bulk magnetization measurements. In the carbon-doped MgB2 thin film, familiar dendritic flux-jump patterns were observed at low temperature as reported in previous experiments. In the ultra-pure MgB2 thin film, however, a remarkably stable flux penetration was observed, c…
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Magnetic instability in both ultra-pure and carbon-doped MgB2 films is investigated by magneto-optical imaging, transport and bulk magnetization measurements. In the carbon-doped MgB2 thin film, familiar dendritic flux-jump patterns were observed at low temperature as reported in previous experiments. In the ultra-pure MgB2 thin film, however, a remarkably stable flux penetration was observed, clearly showing the classic behavior of the critical state model. Such different behavior indicates that the electron scattering ultimately controls the magnetic stability of MgB2 films.
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Submitted 13 October, 2004;
originally announced October 2004.
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Properties of MgB2 thin films with carbon do**
Authors:
A. V. Pogrebnyakov,
X. X. Xi,
J. M. Redwing,
V. Vaithyanathan,
D. G. Schlom,
A. Soukiassian,
S. B. Mi,
C. L. Jia,
C. B. Eom,
J. Chen,
Y. F. Hu,
Y. Cui,
Q. Li
Abstract:
We have studied structural and superconducting properties of MgB2 thin films doped with carbon during the hybrid physical-chemical vapor deposition process. A carbon-containing metalorganic precursor bis(cyclopentadienyl)magnesium was added to the carrier gas to achieve carbon do**. As the amount of carbon in the films increases, the resistivity increases, Tc decreases, and the upper critical…
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We have studied structural and superconducting properties of MgB2 thin films doped with carbon during the hybrid physical-chemical vapor deposition process. A carbon-containing metalorganic precursor bis(cyclopentadienyl)magnesium was added to the carrier gas to achieve carbon do**. As the amount of carbon in the films increases, the resistivity increases, Tc decreases, and the upper critical field increases dramatically as compared to the clean films. The self-field Jc in the carbon-doped films is lower than that in the clean films, but Jc remains relatively high to much higher magnetic fields, indicating stronger pinning. Structurally, the doped films are textured with nano-grains and highly resistive amorphous areas at the grain boundaries. The carbon do** approach can be used to produce MgB2 materials for high magnetic field applications.
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Submitted 6 July, 2004;
originally announced July 2004.
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Correlation of microwave surface impedance of MgB_2 thin film with material parameters and a temperature niche for microwave applications
Authors:
B. B. **,
T. Dahm,
C. Iniotakis,
A. I. Gubin,
Eun-Mi Choi,
Hyun Jung Kim,
Sung-Ik Lee,
W. N. Kang,
S. F. Wang,
Y. L. Zhou,
A. V. Pogrebnyakov,
J. M. Redwing,
X. X. Xi,
N. Klein
Abstract:
Two issues related to the microwave surface impedance Z_s of MgB_2 thin film are discussed in this Letter, both being significant for potential microwave applications. At first, a correlation between Zs and Alpha = Xi/l was found, where Xi is the coherence length, and l is the mean free path. The surface resistance Rs decreases with Alpha at moderate and large values of Alpha and saturates when…
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Two issues related to the microwave surface impedance Z_s of MgB_2 thin film are discussed in this Letter, both being significant for potential microwave applications. At first, a correlation between Zs and Alpha = Xi/l was found, where Xi is the coherence length, and l is the mean free path. The surface resistance Rs decreases with Alpha at moderate and large values of Alpha and saturates when Alpha approaches one. The values of the penetration depth at zero temperature Lamda(0) for different films could be well fitted by Lamda_L (1+Alpha)^(1/2), yielding a London penetration depth Lamda_L of 33.6 nm. The second issue is to find a temperature niche for possible microwave applications. Between 10K and 15K, our best MgB_2 films possess the lowest Rs values compared with other superconductors such as NbN, Nb3Sn and the high-temperature superconductor YBCO.
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Submitted 31 March, 2004;
originally announced March 2004.
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Superconducting gap structure and pinning in disordered MgB2 films
Authors:
Y. Bugoslavsky,
Y. Miyoshi,
G. K. Perkins,
A. D. Caplin,
L. F. Cohen,
H. Y. Zhai,
H. M. Christen,
A. V. Pogrebnyakov,
X. X. Xi,
O. V. Dolgov
Abstract:
We have performed a comparative study of two thin films of magnesium diboride (MgB2) grown by different techniques. The critical current density at different temperatures and magnetic fields was evaluated from magnetisation curves, the structure of superconducting order parameter was obtained from point-contact spectroscopy, and the scattering rates were evaluated by fitting the temperature depe…
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We have performed a comparative study of two thin films of magnesium diboride (MgB2) grown by different techniques. The critical current density at different temperatures and magnetic fields was evaluated from magnetisation curves, the structure of superconducting order parameter was obtained from point-contact spectroscopy, and the scattering rates were evaluated by fitting the temperature dependent normal-state resistivity to the two-band model. The films have similar critical temperatures close to 39 K, but the upper critical fields were different by a factor of 2 (5.2T and 2.5 T at 20 K). We have found that the film with higher Hc2 also had stronger scattering in the sigma band and smaller value of the superconducting gap in this band. As the scattering in sigma band is primarily due to the defects in boron plane, our results are consistent with the assumption that disordering the boron planes leads to enhanced Hc2 and better pinning properties in magnetic field.
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Submitted 25 September, 2003;
originally announced September 2003.
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The effect of magnetic field on the two superconducting gaps in MgB2
Authors:
Y. Bugoslavsky,
Y. Miyoshi,
G. K. Perkins,
A. D. Caplin,
L. F. Cohen,
A. V. Pogrebnyakov,
X. X. Xi
Abstract:
Double-gap superconductivity in an epitaxial MgB2 film has been studied by means of point-contact spectroscopy in magnetic field up to 8 Tesla. The relatively fast disappearance of the feature associated with the pi-band gap at a field around 1 T is caused by the line broadening due to strong pair breaking rather than to a collapse of the double-gap state. This pair breaking was found to increas…
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Double-gap superconductivity in an epitaxial MgB2 film has been studied by means of point-contact spectroscopy in magnetic field up to 8 Tesla. The relatively fast disappearance of the feature associated with the pi-band gap at a field around 1 T is caused by the line broadening due to strong pair breaking rather than to a collapse of the double-gap state. This pair breaking was found to increase linearly with field. Field dependences of the order parameters Delta_pi and Delta_sigma in the pi and sigma bands were measured in field applied parallel and perpendicular to the film, at T = 4.2 K. In perpendicular field, both order parameters survive to a common Hc2, which is about 6.5 T for this direction. In parallel field, the decrease of Delta_sigma is much more gradual, consistent with the Hc2 being about 4 times greater in this ori-entation. The difference in Delta_pi measured in the two field orientations is however smaller than the difference of Delta_sigma. We compare these results with the data on tunnelling spectroscopy and specific heat measurements of MgB2 single crystals and find consistency between the different experimental approaches.
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Submitted 1 September, 2003; v1 submitted 22 July, 2003;
originally announced July 2003.
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Thickness dependence of the properties of epitaxial MgB2 thin films grown by hybrid physical-chemical vapor deposition
Authors:
A. V. Pogrebnyakov,
J. M. Redwing,
J. E. Jones,
X. X. Xi,
S. Y. Xu,
Q. Li,
V. Vaithyanathan,
D. G. Schlom
Abstract:
We have studied the effect of deposition rate and layer thickness on the properties of epitaxial MgB2 thin films grown by hybrid physical-chemical vapor deposition on 4H-SiC substrates. The MgB2 film deposition rate depends linearly on the concentration of B2H6 in the inlet gas mixture. We found that the superconducting and normal-state properties of the MgB2 films are determined by the film thi…
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We have studied the effect of deposition rate and layer thickness on the properties of epitaxial MgB2 thin films grown by hybrid physical-chemical vapor deposition on 4H-SiC substrates. The MgB2 film deposition rate depends linearly on the concentration of B2H6 in the inlet gas mixture. We found that the superconducting and normal-state properties of the MgB2 films are determined by the film thickness, not by the deposition rate. When the film thickness was increased, the transition temperature, Tc, increased and the residual resistivity, rho0, decreased. Above about 300 nm, a Tc of 41.8 K, a rho0 of 0.28 mikroOhm.cm, and a residual resistance ratio RRR of over 30 were obtained. These values represent the best MgB2 properties reported thus far.
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Submitted 7 April, 2003;
originally announced April 2003.
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Critical Current Density and Resistivity of MgB2 Films
Authors:
J. M. Rowell,
S. Y. Xu,
X. H. Zeng,
A. V. Pogrebnyakov,
Q. Li,
X. X. Xi,
J. M. Redwing,
W. Tian,
X. Pan
Abstract:
The high resistivity of many bulk and film samples of MgB2 is most readily explained by the suggestion that only a fraction of the cross-sectional area of the samples is effectively carrying current. Hence the supercurrent (Jc) in such samples will be limited by the same area factor, arising for example from porosity or from insulating oxides present at the grain boundaries. We suggest that a co…
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The high resistivity of many bulk and film samples of MgB2 is most readily explained by the suggestion that only a fraction of the cross-sectional area of the samples is effectively carrying current. Hence the supercurrent (Jc) in such samples will be limited by the same area factor, arising for example from porosity or from insulating oxides present at the grain boundaries. We suggest that a correlation should exist, Jc ~ 1/{Rho(300K) - Rho(50K)}, where Rho(300K) - Rho(50K) is the change in the apparent resistivity from 300 K to 50 K. We report measurements of Rho(T) and Jc for a number of films made by hybrid physical-chemical vapor deposition which demonstrate this correlation, although the "reduced effective area" argument alone is not sufficient. We suggest that this argument can also apply to many polycrystalline bulk and wire samples of MgB2.
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Submitted 3 February, 2003;
originally announced February 2003.
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CVD-based approach to the growth of epitaxial MgB2 thin films
Authors:
A. V. Pogrebnyakov,
X. H. Zheng,
A. Kotcharov,
J. E. Jones,
X. X. Xi,
E. M. Lysczek,
J. Redwing,
S. Y. Xu,
Q. Li,
J. Lettiery,
D. G. Schlom,
J. Schallenberger,
Z. K. Liu,
W. Tian,
X. Q. Pan
Abstract:
The paper has been withdrawn
The paper has been withdrawn
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Submitted 9 April, 2002; v1 submitted 6 April, 2002;
originally announced April 2002.
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In situ epitaxial MgB2 thin films for superconducting electronics
Authors:
X. H. Zeng,
A. V. Pogrebnyakov,
A. Kotcharov,
J. E. Jones,
X. X. Xi,
E. M. Lysczek,
J. M. Redwing,
S. Y. Xu,
Qi Li,
J. Lettieri,
D. G. Schlom,
W. Tian,
X. Q. Pan,
Z. K. Liu
Abstract:
A thin film technology compatible with multilayer device fabrication is critical for exploring the potential of the 39-K superconductor magnesium diboride for superconducting electronics. Using a Hybrid Physical-Chemical Vapor Deposition (HPCVD) process, it is shown that the high Mg vapor pressure necessary to keep the MgB$_2$ phase thermodynamically stable can be achieved for the {\it in situ}…
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A thin film technology compatible with multilayer device fabrication is critical for exploring the potential of the 39-K superconductor magnesium diboride for superconducting electronics. Using a Hybrid Physical-Chemical Vapor Deposition (HPCVD) process, it is shown that the high Mg vapor pressure necessary to keep the MgB$_2$ phase thermodynamically stable can be achieved for the {\it in situ} growth of MgB$_2$ thin films. The films grow epitaxially on (0001) sapphire and (0001) 4H-SiC substrates and show a bulk-like $T_c$ of 39 K, a $J_c$(4.2K) of $1.2 \times 10^7$ A/cm$^2$ in zero field, and a $H_{c2}(0)$ of 29.2 T in parallel magnetic field. The surface is smooth with a root-mean-square roughness of 2.5 nm for MgB$_2$ films on SiC. This deposition method opens tremendous opportunities for superconducting electronics using MgB$_2$.
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Submitted 27 March, 2002;
originally announced March 2002.
