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Effects of dislocation filtering layers on optical properties of third telecom window emitting InAs/InGaAlAs quantum dots grown on silicon substrates
Authors:
Wojciech Rudno-Rudziński,
Michał Gawełczyk,
Paweł Podemski,
Ramasubramanian Balasubramanian,
Vitalii Sichkovskyi,
Amnon J. Willinger,
Gadi Eisenstein,
Johann P. Reithmaier,
Grzegorz Sęk
Abstract:
Integrating light emitters based on III-V materials with silicon-based electronics is crucial for further increase in data transfer rates in communication systems since the indirect bandgap of silicon prevents its direct use as a light source. We investigate here InAs/InGaAlAs quantum dot (QD) structures grown directly on 5° off-cut Si substrate and emitting light at 1.5 micrometers, compatible wi…
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Integrating light emitters based on III-V materials with silicon-based electronics is crucial for further increase in data transfer rates in communication systems since the indirect bandgap of silicon prevents its direct use as a light source. We investigate here InAs/InGaAlAs quantum dot (QD) structures grown directly on 5° off-cut Si substrate and emitting light at 1.5 micrometers, compatible with established telecom platform. Using different dislocation defects filtering layers, exploiting strained superlattices and supplementary QD layers, we mitigate the effects of lattice constant and thermal expansion mismatches between III-V materials and Si during growth. Complementary optical spectroscopy techniques, i.e. photoreflectance and temperature-, time- and polarization- resolved photoluminescence, allow us to determine the optical quality and application potential of the obtained structures by comparing them to a reference sample -- state-of-the-art QDs grown on InP. Experimental findings are supported by calculations of excitonic states and optical transitions by combining multiband k.p and configuration-interaction methods. We show that our design of structures prevents the generation of a considerable density of defects, as intended. The emission of Si-based structures appears to be much broader than for the reference dots, due to the creation of different QD populations which might be a disadvantage in particular laser applications, however, could be favourable for others, e.g. in broadly tunable devices, sensors, or optical amplifiers. Eventually, we identify the overall most promising combination of defect filtering layers, discuss its advantages and limitations, and prospects for further improvements.
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Submitted 20 March, 2024;
originally announced March 2024.
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Impact of MBE-grown (In,Ga)As/GaAs metamorphic buffers on excitonic and optical properties of single quantum dots with single-photon emission tuned to the telecom range
Authors:
Paweł Wyborski,
Michał Gawełczyk,
Paweł Podemski,
Piotr Andrzej Wroński,
Mirosława Pawlyta,
Sandeep Gorantla,
Fauzia Jabeen,
Sven Höfling,
Grzegorz Sęk
Abstract:
Tuning GaAs-based quantum emitters to telecom wavelengths makes it possible to use the existing mature technology for applications in, e.g., long-haul ultra-secure communication in the fiber networks. A promising method re-developed recently is to use a metamorphic InGaAs buffer that redshifts the emission by reducing strain. However, the impact of such a buffer causes also a simultaneous modifica…
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Tuning GaAs-based quantum emitters to telecom wavelengths makes it possible to use the existing mature technology for applications in, e.g., long-haul ultra-secure communication in the fiber networks. A promising method re-developed recently is to use a metamorphic InGaAs buffer that redshifts the emission by reducing strain. However, the impact of such a buffer causes also a simultaneous modification of other quantum dot properties. Knowledge of these effects is crucial for actual implementations of QD-based non-classical light sources for quantum communication schemes. Here, we thoroughly study single GaAs-based quantum dots grown by molecular-beam epitaxy on specially designed, digital-alloy InGaAs metamorphic buffers. With a set of structures varying in the buffer indium content and providing quantum dot emission through the telecom spectral range up to 1.6 $μ$m, we analyze the impact of the buffer and its composition on QD structural and optical properties. We identify the mechanisms of quantum dot emission shift with varying buffer composition. We also look into the charge trap** processes and compare excitonic properties for different growth conditions with single-dot emission successfully shifted to both, the second and the third telecom windows.
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Submitted 26 November, 2023; v1 submitted 29 April, 2023;
originally announced May 2023.
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Excited states of neutral and charged excitons in single strongly asymmetric InP-based nanostructures emitting in the telecom C band
Authors:
M. Gawełczyk,
P. Wyborski,
P. Podemski,
J. P. Reithmaier,
S. Höfling,
G. Sęk
Abstract:
We investigate strongly asymmetric self-assembled nanostructures with one of dimensions reaching hundreds of nanometers. Close to the nanowire-like type of confinement, such objects are sometimes assigned as one-dimensional in nature. Here, we directly observe the spectrum of exciton excited states corresponding to longitudinal quantization. This is based on probing the optical transitions via pol…
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We investigate strongly asymmetric self-assembled nanostructures with one of dimensions reaching hundreds of nanometers. Close to the nanowire-like type of confinement, such objects are sometimes assigned as one-dimensional in nature. Here, we directly observe the spectrum of exciton excited states corresponding to longitudinal quantization. This is based on probing the optical transitions via polarization-resolved microphotoluminescence excitation ($μ$PLE) measurement performed on single nanostructures combined with theoretical calculation of neutral and charged exciton optical properties. We successfully probe absorption-like spectra for individual bright states forming the exciton ground-state fine structure, as well as for the negatively charged exciton. Confronting the calculated spectrum of excitonic absorption with $μ$PLE traces, we identify optical transitions involving states that contain carriers at various excited levels related to the longest dimension. Based on cross-polarized excitation-detection scheme, we show very well conserved spin configuration during orbital relaxation of the exciton from a number of excited states comparable to the quasi-resonant pum** via the optical phonon, and no polarization memory for the trion, as theoretically expected.
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Submitted 28 June, 2021;
originally announced June 2021.
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Interplay between emission wavelength and s-p splitting in MOCVD-grown InGaAs/GaAs quantum dots emitting above 1.3 μm
Authors:
Paweł Podemski,
Anna Musiał,
Krzysztof Gawarecki,
Aleksander Maryński,
Przemysław Gontar,
Artem Bercha,
Witold A. Trzeciakowski,
Nicole Srocka,
Tobias Heuser,
David Quandt,
André Strittmatter,
Sven Rodt,
Stephan Reitzenstein,
Grzegorz Sęk
Abstract:
The electronic structure of strain-engineered single InGaAs/GaAs quantum dots emitting in the telecommunication O band is probed experimentally by photoluminescence excitation spectroscopy. Observed resonances can be attributed to p-shell states of individual quantum dots. The determined energy difference between s-shell and p-shell shows an inverse dependence on the emission energy. The experimen…
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The electronic structure of strain-engineered single InGaAs/GaAs quantum dots emitting in the telecommunication O band is probed experimentally by photoluminescence excitation spectroscopy. Observed resonances can be attributed to p-shell states of individual quantum dots. The determined energy difference between s-shell and p-shell shows an inverse dependence on the emission energy. The experimental data are compared with the results of confined states calculations, where the impact of the size and composition in the investigated structures is simulated within the 8-band $\mathbf{k}\cdot\mathbf{p}$ model. On this basis, the experimental observation is attributed mainly to changes in indium content within individual quantum dots, indicating a way of engineering and selecting a desired quantum dot, whose electronic structure is the most suitable for a given nanophotonic application.
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Submitted 17 January, 2020; v1 submitted 14 August, 2019;
originally announced August 2019.
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Single dot photoluminescence excitation spectroscopy in the telecommunication spectral range
Authors:
Paweł Podemski,
Aleksander Maryński,
Paweł Wyborski,
Artem Bercha,
Witold Trzeciakowski,
Grzegorz Sęk
Abstract:
Single dot photoluminescence excitation spectroscopy provides an insight into energy structure of individual quantum dots, energy transfer processes within and between the dots and their surroundings. The access to single dot energy structure is vital for further development of telecom-based quantum emitters, like single photon sources or entangled pair of photons. However, application of single d…
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Single dot photoluminescence excitation spectroscopy provides an insight into energy structure of individual quantum dots, energy transfer processes within and between the dots and their surroundings. The access to single dot energy structure is vital for further development of telecom-based quantum emitters, like single photon sources or entangled pair of photons. However, application of single dot photoluminescence excitation spectroscopy is limited mainly to dots emitting below 1 $μ$m, while nanostructures optically active in the telecommunication windows of 1.3 and 1.55 $μ$m are of particular interest, as they correspond to the desirable wavelengths in nanophotonic applications. This report presents an approach to photoluminescence excitation spectroscopy covering this application-relevant spectral range on single dot level. Experimental details are discussed, including issues related to the tunable excitation source and its spectral filtering, and illustrated with examples of photoluminescence excitation spectroscopy results from single quantum dots emitting in both the 1.3 and 1.55 $μ$m spectral ranges.
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Submitted 25 April, 2019; v1 submitted 22 March, 2019;
originally announced March 2019.
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Carrier trap** and luminescence polarization in quantum dashes
Authors:
A. Musiał,
P. Kaczmarkiewicz,
G. Sęk,
P. Podemski,
P. Machnikowski,
J. Misiewicz,
S. Hein,
S. Höfling,
A. Forchel
Abstract:
We study experimentally and theoretically polarization-dependent luminescence from an ensemble of quantum-dot-like nanostructures with a very large in-plane shape anisotropy (quantum dashes). We show that the measured degree of linear polarization of the emitted light increases with the excitation power and changes with temperature in a non-trivial way, depending on the excitation conditions. Usin…
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We study experimentally and theoretically polarization-dependent luminescence from an ensemble of quantum-dot-like nanostructures with a very large in-plane shape anisotropy (quantum dashes). We show that the measured degree of linear polarization of the emitted light increases with the excitation power and changes with temperature in a non-trivial way, depending on the excitation conditions. Using an approximate model based on the k.p theory, we are able to relate this degree of polarization to the amount of light hole admixture in the exciton states which, in turn, depends on the symmetry of the envelope wave function. Agreement between the measured properties and theory is reached under assumption that the ground exciton state in a quantum dash is trapped in a confinement fluctuation within the structure and thus localized in a much smaller volume of much lower asymmetry than the entire nanostructure.
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Submitted 5 January, 2012; v1 submitted 21 July, 2011;
originally announced July 2011.
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Hole subband mixing and polarization of luminescence from quantum dashes: a simple model
Authors:
Piotr Kaczmarkiewicz,
Anna Musiał,
Grzegorz Sęk,
Paweł Podemski,
Paweł Machnikowski,
Jan Misiewicz
Abstract:
In this paper, we address the problem of luminescence polarization in the case of nanostructures characterized by an in-plane shape asymmetry. We develop a simple semi-qualitative model revealing the mechanism that accounts for the selective polarization properties of such structures. It shows that they are not a straightforward consequence of the geometry but are related to it via valence subband…
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In this paper, we address the problem of luminescence polarization in the case of nanostructures characterized by an in-plane shape asymmetry. We develop a simple semi-qualitative model revealing the mechanism that accounts for the selective polarization properties of such structures. It shows that they are not a straightforward consequence of the geometry but are related to it via valence subband mixing. Our model allows us to predict the degree of polarization (DOP) dependence on the in-plane dimensions of investigated structures assuming a predominantly heavy hole character of the valence band states, simplifying the shape of confining potential and neglecting the influence of the out-of plane dimension. The energy dependence modeling reveals the importance of different excited states in subsequent spectral ranges leading to non-monotonic character of the DOP. The modeling results show good agreement with the experimental data for an ensemble of InAs/InP quantum dashes for a set of realistc parameters with the heavy-light hole states separation being the only adjustable one. All characteristic features are reproduced in the framework of the proposed model and their origin can be well explained and understood. We also make some further predictions about the influence of both the internal characteristics of the nanostructures (e.g. height) and the external conditions (excitation power, temperature) on the overall DOP.
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Submitted 19 July, 2010;
originally announced July 2010.
