Preparation and characterization of Fe-incorporated TiO$_2$ thin films: A study of optical constants and dispersion energy parameters
Authors:
Tapash Chandra Paul,
Jiban Podder,
Lincoln Paik
Abstract:
In this study, we have delineated the preparation and influence of Fe do** on microstructural and optical properties of the pristine and Fe incorporated TiO$_2$ thin film with different Fe concentrations (0, 2, 4, 6, and 8 at.% ). The samples are prepared by easier and cost-saving way of spray pyrolysis technique (SPT) using Ti(OCH$_2$CH$_2$CH$_2$CH$_3$)$_4$ as a precursor of mother material. Th…
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In this study, we have delineated the preparation and influence of Fe do** on microstructural and optical properties of the pristine and Fe incorporated TiO$_2$ thin film with different Fe concentrations (0, 2, 4, 6, and 8 at.% ). The samples are prepared by easier and cost-saving way of spray pyrolysis technique (SPT) using Ti(OCH$_2$CH$_2$CH$_2$CH$_3$)$_4$ as a precursor of mother material. The effect of Fe in the microstructure and phase formation of TiO$_2$ thin films is investigated by XRD analysis. XRD investigation depicts that the pristine product corresponds to anatase phase of TiO$_2$ and remains uncontaminated with addition of 2 at.% Fe impurity. It is also observed that Fe introduces a phase transition from anatase to rutile after adulterating more Fe contents (4, 6 and 8 at.%). In order to study optical characteristics, UVvis spectroscopy has been employed which revels that UV absorption for the Fe incorporated TiO$_2$ products are noticed to move to a longer wavelength (red shift) and Fe contents lessen bandgap energy from 3.81eV (0 at.% Fe) to 3.70 eV (8 at.% Fe) of the TiO$_2$ thin films. The impact of Fe on the optical constants such as refractive index, complex dielectric constants, $\tanĪ“$, VELF and SELF, dispersion parameters of obtained titanium dioxide samples has been studied. The results display that Fe influences the structural and optical characteristics significantly.
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Submitted 5 March, 2021;
originally announced March 2021.
Pressure induced semiconductor to metal phase transition in CsSnBr3 perovskite
Authors:
Md. Sajib Hossain,
Md. Majibul Haque Babu,
Tusar Saha,
Md. Sazzad Hossain,
Jiban Podder,
Md. Shohel Rana,
Md. Abdul Barik,
Protima Rani
Abstract:
Phase transitions in metal halide perovskites triggered by external provocations produce significantly different material properties, providing a prodigious opportunity for a comprehensive applications. In the present study, the first principles calculation has been performed with the help of density functional theory (DFT) using CASTEP code to investigate the physical properties of lead-free CsSn…
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Phase transitions in metal halide perovskites triggered by external provocations produce significantly different material properties, providing a prodigious opportunity for a comprehensive applications. In the present study, the first principles calculation has been performed with the help of density functional theory (DFT) using CASTEP code to investigate the physical properties of lead-free CsSnBr3 metal halide under various hydrostatic pressures. The pressure effect is determined in the range of 0-16 GPa. Subsequently, a significant change is observed in lattice constant and volume with increasing pressure. The electronic band structure show semiconductor to metal phase transition under elevated pressure. The investigation of optical functions displays that the absorption edge of CsSnBr3 perovskite is shifted remarkably toward the low energy region (red shift) with improved pressure up to 16 GPa. In addition, the absorptivity and dielectric constant also upsurges with the applied hydrostatic pressure. Finally, the mechanical properties reveal that CsSnBr3 perovskite is mechanically stable and highly ductile; the ductility is increased with raising pressure. This type of semiconductor to metal phase transition may inspire a wide range of potential applications.
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Submitted 10 February, 2021; v1 submitted 5 February, 2021;
originally announced February 2021.
