Showing 1–2 of 2 results for author: Podd, G J

Charge Detection in Phosphorus-doped Silicon Double Quantum Dots

Authors: A. Rossi, T. Ferrus, G. J. Podd, D. A. Williams

Abstract: We report charge detection in degenerately phosphorus-doped silicon double quantum dots (DQD) electrically connected to an electron reservoir. The sensing device is a single electron transistor (SET) patterned in close proximity to the DQD. Measurements performed at 4.2K show step-like behaviour and shifts of the Coulomb Blockade oscillations in the detector's current as the reservoir's potential… ▽ More We report charge detection in degenerately phosphorus-doped silicon double quantum dots (DQD) electrically connected to an electron reservoir. The sensing device is a single electron transistor (SET) patterned in close proximity to the DQD. Measurements performed at 4.2K show step-like behaviour and shifts of the Coulomb Blockade oscillations in the detector's current as the reservoir's potential is swept. By means of a classical capacitance model, we demonstrate that the observed features can be used to detect single-electron tunnelling from, to and within the DQD, as well as to reveal the DQD charge occupancy. △ Less

Submitted 9 August, 2010; originally announced August 2010.

Comments: 4 pages, 3 figures

Journal ref: Applied Physics Letters 97, 223506 (2010)

Charge Sensing in Intrinsic Silicon Quantum Dots

Authors: G. J. Podd, S. J. Angus, D. A. Williams, A. J. Ferguson

Abstract: We report charge sensing measurements on a silicon quantum dot (QD) with a nearby silicon single electron transistor (SET) acting as an electrometer. The devices are electrostatically formed in bulk silicon using surface gates. We show that as an additional electron is added onto the quantum dot, a charge is induced on the SET of approximately 0.2e. These measurements are performed in the many e… ▽ More We report charge sensing measurements on a silicon quantum dot (QD) with a nearby silicon single electron transistor (SET) acting as an electrometer. The devices are electrostatically formed in bulk silicon using surface gates. We show that as an additional electron is added onto the quantum dot, a charge is induced on the SET of approximately 0.2e. These measurements are performed in the many electron regime, where we can count in excess of 20 charge additions onto the quantum dot. △ Less

Submitted 11 February, 2010; originally announced February 2010.

Comments: To be published in Appl. Phys. Lett

Journal ref: Appl. Phys. Lett. 96, 082104 (2010)