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Nucleation at the phase transition near 40~$^{\circ }$C in MnAs nanodisks
Authors:
B Jenichen,
Y Takagaki,
K H Ploog,
N Darowski,
R Feyerherm,
I Zizak
Abstract:
The phase transition near 40~$^{\circ }$C of both as-grown thin epitaxial MnAs films prepared by molecular beam epitaxy on GaAs(001) and nanometer-scale disks fabricated from the same films is studied. The disks are found to exhibit a pronounced hysteresis in the temperature curve of the phase composition. In contrast, supercooling and overheating take place far less in the samples of continuous l…
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The phase transition near 40~$^{\circ }$C of both as-grown thin epitaxial MnAs films prepared by molecular beam epitaxy on GaAs(001) and nanometer-scale disks fabricated from the same films is studied. The disks are found to exhibit a pronounced hysteresis in the temperature curve of the phase composition. In contrast, supercooling and overheating take place far less in the samples of continuous layers. These phenomena are explained in terms of the necessary formation of nuclei of the other phase in each of the disks independent from each other. The influence of the elastic strains in the disks is reduced considerably.
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Submitted 16 July, 2019;
originally announced July 2019.
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A microscopic model for the magnetic field driven breakdown of the dissipationless state in the integer and fractional quantum Hall effect
Authors:
A. Poux,
Z. R. Wasilewski,
K. J. Friedland,
R. Hey,
K. H. Ploog,
R. Airey,
P. Plochocka,
D. K. Maude
Abstract:
Intra Landau level thermal activation, from localized states in the tail, to delocalized states above the mobility edge in the same Landau level, explains the $B_c(T)$ (half width of the dissipationless state) phase diagram for a number of different quantum Hall samples with widely ranging carrier density, mobility and disorder. Good agreement is achieved over $2-3$ orders of magnitude in temperat…
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Intra Landau level thermal activation, from localized states in the tail, to delocalized states above the mobility edge in the same Landau level, explains the $B_c(T)$ (half width of the dissipationless state) phase diagram for a number of different quantum Hall samples with widely ranging carrier density, mobility and disorder. Good agreement is achieved over $2-3$ orders of magnitude in temperature and magnetic field for a wide range of filling factors. The Landau level width is found to be independent of magnetic field. The mobility edge moves, in the case of changing Landau level overlap to maintain a sample dependent critical density of states at that energy. An analysis of filling factor $ν=2/3$ shows that the composite Fermion Landau levels have exactly the same width as their electron counterparts. An important ingredient of the model is the Lorentzian broadening with long tails which provide localized states deep in the gap which are essential in order to reproduce the robust high temperature $B_c(T)$ phase observed in experiment.
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Submitted 2 September, 2016;
originally announced September 2016.
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Comment on "Identification of different electron screening behavior between the bulk and surface of (Ga,Mn)As [Phys. Rev. Lett. 107, 187203 (2011)]"
Authors:
M. Moreno,
K. H. Ploog
Abstract:
In a recent Letter [Phys. Rev. Lett. 107, 187203 (2011)], Fujii et al. reported Mn 2p photoelectron emission spectra for (Ga,Mn)As recorded using hard x-rays. Due to the enhanced bulk sensitivity, hard-x-ray spectra reveal an extra "low-binding-energy peak", which is absent in surface-sensitive spectra recorded using soft x-rays. Based on Anderson-impurity-model calculations, Fujii et al. assigned…
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In a recent Letter [Phys. Rev. Lett. 107, 187203 (2011)], Fujii et al. reported Mn 2p photoelectron emission spectra for (Ga,Mn)As recorded using hard x-rays. Due to the enhanced bulk sensitivity, hard-x-ray spectra reveal an extra "low-binding-energy peak", which is absent in surface-sensitive spectra recorded using soft x-rays. Based on Anderson-impurity-model calculations, Fujii et al. assigned the low-binding-energy peak to a cd6L2 final state, and related the variations in its intensity to variations in the As 4p-Mn 3d hybridization strength V. We show here that the definition of the charge-transfer energy considered by Fujii et al. is different from that considered in the Zaanen-Sawatzky-Allen diagram. We note that the Anderson impurity model is insufficient to describe low-binding-energy peaks in hard-x-ray core-level photoemission for transition-metal compounds on the verge of a metal-insulator transition. We propose a more plausible origin for the (Ga,Mn)As low-binding-energy peak, related to the nature of its metal-insulator transition.
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Submitted 13 April, 2012;
originally announced April 2012.
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Phase-separated high-temperature-annealed (Ga,Mn)As: A negative charge-transfer-energy material
Authors:
M. Moreno,
K. H. Ploog
Abstract:
The approximate location in the Zaanen-Sawatzky-Allen diagram of the phase-separated (Ga,Mn)As material, consisting of MnAs nanoclusters embedded in GaAs, is determined on the basis of configuration-interaction (CI) cluster-model analysis of their Mn 2p core-level photoemission. The composite material is found to belong to the special class of materials with negative charge-transfer energy (delta)…
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The approximate location in the Zaanen-Sawatzky-Allen diagram of the phase-separated (Ga,Mn)As material, consisting of MnAs nanoclusters embedded in GaAs, is determined on the basis of configuration-interaction (CI) cluster-model analysis of their Mn 2p core-level photoemission. The composite material is found to belong to the special class of materials with negative charge-transfer energy (delta). As such, its metallic or insulating/semiconducting behavior depends on the strength of the p-d hybridization (affected by strain) relative to the (size-dependent) p-bandwidth. Whereas internal strain in the embedded clusters counteracts gap opening, a metal-to-semiconductor transition is expected to occur for decreasing cluster size, associated to the opening of a small gap of p-p type (covalent gap). The electronic properties of homogeneous and phase-separated (Ga,Mn)As materials are analyzed, with emphasis on the nature of their metal-insulator transitions.
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Submitted 4 August, 2011;
originally announced August 2011.
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Enhanced electron correlations, local moments, and Curie temperature in strained MnAs nanocrystals embedded in GaAs
Authors:
M. Moreno,
J. I. Cerdá,
K. H. Ploog,
K. Horn
Abstract:
We have studied the electronic structure of hexagonal MnAs, as epitaxial continuous film on GaAs(001) and as nanocrystals embedded in GaAs, by Mn 2p core-level photoemission spectroscopy. Configuration-interaction analyses based on a cluster model show that the ground state of the embedded MnAs nanocrystals is dominated by a d5 configuration that maximizes the local Mn moment. Nanoscaling and stra…
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We have studied the electronic structure of hexagonal MnAs, as epitaxial continuous film on GaAs(001) and as nanocrystals embedded in GaAs, by Mn 2p core-level photoemission spectroscopy. Configuration-interaction analyses based on a cluster model show that the ground state of the embedded MnAs nanocrystals is dominated by a d5 configuration that maximizes the local Mn moment. Nanoscaling and strain significantly alter the properties of MnAs. Internal strain in the nanocrystals results in reduced p-d hybridization and enhanced ionic character of the Mn-As bonding interactions. The spatial confinement and reduced p-d hybridization in the nanocrystals lead to enhanced d-electron localization, triggering d-d electron correlations and enhancing local Mn moments. These changes in the electronic structure of MnAs have an advantageous effect on the Curie temperature of the nanocrystals, which is measured to be remarkably higher than that of bulk MnAs.
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Submitted 4 August, 2011; v1 submitted 4 March, 2010;
originally announced March 2010.
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Quantum effects in linear and non-linear transport of T-shaped ballistic junction
Authors:
J. Wrobel,
P. Zagrajek,
M. Czapkiewicz,
M. Bek,
D. Sztenkiel,
K. Fronc,
R. Hey,
K. H. Ploog,
B. R. Bulka
Abstract:
We report low-temperature transport measurements of three-terminal T-shaped device patterned from GaAs/AlGaAs heterostructure. We demonstrate the mode branching and bend resistance effects predicted by numerical modeling for linear conductance data. We show also that the backscattering at the junction area depends on the wave function parity. We find evidence that in a non-linear transport regim…
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We report low-temperature transport measurements of three-terminal T-shaped device patterned from GaAs/AlGaAs heterostructure. We demonstrate the mode branching and bend resistance effects predicted by numerical modeling for linear conductance data. We show also that the backscattering at the junction area depends on the wave function parity. We find evidence that in a non-linear transport regime the voltage of floating electrode always increases as a function of push-pull polarization. Such anomalous effect occurs for the symmetric device, provided the applied voltage is less than the Fermi energy in equilibrium.
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Submitted 10 December, 2009;
originally announced December 2009.
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Mesoscopic spin confinement during acoustically induced transport
Authors:
J. A. H. Stotz,
P. V. Santos,
R. Hey,
K. H. Ploog
Abstract:
Long coherence lifetimes of electron spins transported using moving potential dots are shown to result from the mesoscopic confinement of the spin vector. The confinement dimensions required for spin control are governed by the characteristic spin-orbit length of the electron spins, which must be larger than the dimensions of the dot potential. We show that the coherence lifetime of the electron…
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Long coherence lifetimes of electron spins transported using moving potential dots are shown to result from the mesoscopic confinement of the spin vector. The confinement dimensions required for spin control are governed by the characteristic spin-orbit length of the electron spins, which must be larger than the dimensions of the dot potential. We show that the coherence lifetime of the electron spins is independent of the local carrier densities within each potential dot and that the precession frequency, which is determined by the Dresselhaus contribution to the spin-orbit coupling, can be modified by varying the sample dimensions resulting in predictable changes in the spin-orbit length and, consequently, in the spin coherence lifetime.
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Submitted 6 July, 2007;
originally announced July 2007.
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Influence of the single-particle Zeeman energy on the quantum Hall ferromagnet at high filling factors
Authors:
B. A. Piot,
D. K. Maude,
M. Henini,
Z. R. Wasilewski,
J. A. Gupta,
K. J. Friedland,
R. Hey,
K. H. Ploog,
U. Gennser,
A. Cavanna,
D. Mailly,
R. Airey,
G. Hill
Abstract:
In a recent paper [B. A. Piot et al., Phys. Rev. B 72, 245325 (2005)], we have shown that the lifting of the electron spin degeneracy in the integer quantum Hall effect at high filling factors should be interpreted as a magnetic-field-induced Stoner transition. In this work, we extend the analysis to investigate the influence of the single-particle Zeeman energy on the quantum Hall ferromagnet a…
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In a recent paper [B. A. Piot et al., Phys. Rev. B 72, 245325 (2005)], we have shown that the lifting of the electron spin degeneracy in the integer quantum Hall effect at high filling factors should be interpreted as a magnetic-field-induced Stoner transition. In this work, we extend the analysis to investigate the influence of the single-particle Zeeman energy on the quantum Hall ferromagnet at high filling factors. The single-particle Zeeman energy is tuned through the application of an additional in-plane magnetic field. Both the evolution of the spin polarization of the system and the critical magnetic field for spin splitting are well described as a function of the tilt angle of the sample in the magnetic field.
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Submitted 1 May, 2007;
originally announced May 2007.
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Magnetotransport in two-dimensional electron gases on cylindrical surfaces
Authors:
K. -J. Friedland,
R. Hey,
H. Kostial,
U. Jahn,
E. Wiebicke,
K. H. Ploog,
A. Vorob'ev,
Ju. Yukecheva,
V. Prinz
Abstract:
We have fabricated high-mobility, two-dimensional electron gases in a GaAs quantum well on cylindrical surfaces, which allows to investigate the magnetotransport behavior under varying magnetic fields along the current path. A strong asymmetry in the quantum Hall effect appears for measurements on both sides of the conductive path. We determined the strain at the position of the quantum well. We…
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We have fabricated high-mobility, two-dimensional electron gases in a GaAs quantum well on cylindrical surfaces, which allows to investigate the magnetotransport behavior under varying magnetic fields along the current path. A strong asymmetry in the quantum Hall effect appears for measurements on both sides of the conductive path. We determined the strain at the position of the quantum well. We observe ballistic transport in 8-micrometers-wide collimating structures.
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Submitted 26 March, 2007;
originally announced March 2007.
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Spatial Coherence of a Polariton Condensate
Authors:
Hui Deng,
Glenn S. Solomon,
Rudolf Hey,
Klaus H. Ploog,
Yoshihisa Yamamoto
Abstract:
We perform Young's double-slit experiment to study the spatial coherence properties of a two-dimensional dynamic condensate of semiconductor microcavity polaritons. The coherence length of the system is measured as a function of the pump rate, which confirms a spontaneous buildup of macroscopic coherence in the condensed phase. An independent measurement reveals that the position and momentum un…
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We perform Young's double-slit experiment to study the spatial coherence properties of a two-dimensional dynamic condensate of semiconductor microcavity polaritons. The coherence length of the system is measured as a function of the pump rate, which confirms a spontaneous buildup of macroscopic coherence in the condensed phase. An independent measurement reveals that the position and momentum uncertainty product of the condensate is close to the Heisenberg limit. An experimental realization of such a minimum uncertainty wave packet of the polariton condensate opens a door to coherent matter-wave phenomena such as Josephson oscillation, superfluidity, and solitons in solid state condensate systems.
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Submitted 18 September, 2007; v1 submitted 20 March, 2007;
originally announced March 2007.
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Magnetophonon resonance in high density, high mobility quantum well systems
Authors:
C. Faugeras,
D. K. Maude,
G. Martinez,
L. B. Rigal,
C. Proust,
K. -J. Friedland,
R. Hey,
K. H. Ploog
Abstract:
We have investigated the magnetophonon resonance (MPR) effect in a series of single GaAs quantum well samples which are symmetrically modulation doped in the adjacent short period AlAs/GaAs superlattices. Two distinct MPR series are observed originating from the $Γ$ and X electrons interacting with the GaAs and AlAs longitudinal optic (LO) phonons respectively. This confirms unequivocally the pr…
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We have investigated the magnetophonon resonance (MPR) effect in a series of single GaAs quantum well samples which are symmetrically modulation doped in the adjacent short period AlAs/GaAs superlattices. Two distinct MPR series are observed originating from the $Γ$ and X electrons interacting with the GaAs and AlAs longitudinal optic (LO) phonons respectively. This confirms unequivocally the presence of X electrons in the AlAs quantum well of the superlattice previously invoked to explain the high electron mobility in these structures (Friedland et al. Phys. Rev. Lett. 77,4616 (1996).
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Submitted 19 January, 2006;
originally announced January 2006.
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The quantum Hall ferromagnet at high filling factors: A magnetic field induced Stoner transition
Authors:
B. A. Piot,
D. K. Maude,
M. Henini,
Z. R. Wasilewski,
K. J. Friedland,
R. Hey,
K. H. Ploog,
A. I. Toropov,
R. Airey,
G. Hill
Abstract:
Spin splitting in the integer quantum Hall effect is investigated for a series of Al$_{x}$Ga$_{1-x}$As/GaAs heterojunctions and quantum wells. Magnetoresistance measurements are performed at mK temperature to characterize the electronic density of states and estimate the strength of many body interactions. A simple model with no free parameters correctly predicts the magnetic field required to o…
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Spin splitting in the integer quantum Hall effect is investigated for a series of Al$_{x}$Ga$_{1-x}$As/GaAs heterojunctions and quantum wells. Magnetoresistance measurements are performed at mK temperature to characterize the electronic density of states and estimate the strength of many body interactions. A simple model with no free parameters correctly predicts the magnetic field required to observe spin splitting confirming that the appearance of spin splitting is a result of a competition between the disorder induced energy cost of flip** spins and the exchange energy gain associated with the polarized state. In this model, the single particle Zeeman energy plays no role, so that the appearance of this quantum Hall ferromagnet in the highest occupied Landau level can also be thought of as a magnetic field induced Stoner transition.
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Submitted 21 December, 2005;
originally announced December 2005.
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Large spin splitting of GaN electronic states induced by Gd do**
Authors:
V. F. Sapega,
M. Ramsteiner,
S. Dhar,
O. Brandt,
K. H. Ploog
Abstract:
We present a detailed study of the magnetic-field and temperature-dependent polarization of the near-band-gap photoluminescence in Gd-doped GaN layers. Our study reveals an extraordinarily strong influence of Gd do** on the electronic states in the GaN matrix. We observe that the spin splitting of the valence band reverses its sign for Gd concentrations as low as 1.6 x 10^{16} cm^{-3}. This re…
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We present a detailed study of the magnetic-field and temperature-dependent polarization of the near-band-gap photoluminescence in Gd-doped GaN layers. Our study reveals an extraordinarily strong influence of Gd do** on the electronic states in the GaN matrix. We observe that the spin splitting of the valence band reverses its sign for Gd concentrations as low as 1.6 x 10^{16} cm^{-3}. This remarkable result can be understood only in terms of a long range induction of magnetic moments in the surrounding GaN matrix by the Gd ions.
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Submitted 8 September, 2005;
originally announced September 2005.
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GaN:Gd: A superdilute ferromagnetic semiconductor with a Curie temperature above 300 K
Authors:
S. Dhar,
O. Brandt,
M. Ramsteiner,
V. F. Sapega,
K. H. Ploog
Abstract:
We investigate the magnetic and magneto-optic properties of epitaxial GaN:Gd layers as a function of the external magnetic field and temperature. An unprecedented magnetic moment is observed in this diluted magnetic semiconductor. The average value of the moment per Gd atom is found to be as high as 4000 \mub as compared to its atomic moment of 8 \mub. The long-range spin-polarization of the GaN…
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We investigate the magnetic and magneto-optic properties of epitaxial GaN:Gd layers as a function of the external magnetic field and temperature. An unprecedented magnetic moment is observed in this diluted magnetic semiconductor. The average value of the moment per Gd atom is found to be as high as 4000 \mub as compared to its atomic moment of 8 \mub. The long-range spin-polarization of the GaN matrix by Gd is also reflected in the circular polarization of magneto-photoluminescence measurements. Moreover, the materials system is found to be ferromagnetic above room temperature in the entire concentration range under investigation (7$\times10^{15}$ to 2$\times10^{19}$ cm$^{-3}$). We propose a phenomenological model to understand the macroscopic magnetic behavior of the system. Our study reveals a close connection between the observed ferromagnetism and the colossal magnetic moment of Gd.
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Submitted 19 January, 2005; v1 submitted 21 December, 2004;
originally announced December 2004.
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X-ray diffraction peak profiles from threading dislocations in GaN epitaxial films
Authors:
V. M. Kaganer,
O. Brandt,
A. Trampert,
K. H. Ploog
Abstract:
We analyze the lineshape of x-ray diffraction profiles of GaN epitaxial layers with large densities of randomly distributed threading dislocations. The peaks are Gaussian only in the central, most intense part of the peak, while the tails obey a power law. The $q^{-3}$ decay typical for random dislocations is observed in double-crystal rocking curves. The entire profile is well fitted by a restr…
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We analyze the lineshape of x-ray diffraction profiles of GaN epitaxial layers with large densities of randomly distributed threading dislocations. The peaks are Gaussian only in the central, most intense part of the peak, while the tails obey a power law. The $q^{-3}$ decay typical for random dislocations is observed in double-crystal rocking curves. The entire profile is well fitted by a restricted random dislocation distribution. The densities of both edge and screw threading dislocations and the ranges of dislocation correlations are obtained.
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Submitted 20 October, 2004;
originally announced October 2004.
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Spin filtering in a hybrid ferromagnetic-semiconductor microstructure
Authors:
J. Wróbel,
T. Dietl,
A. Lusakowski,
G. Grabecki,
K. Fronc,
R. Hey,
K. H. Ploog,
H. Shtrikman
Abstract:
We fabricated a hybrid structure in which cobalt and permalloy micromagnets produce a local in-plane spin-dependent potential barrier for high-mobility electrons at the GaAs/AlGaAs interface. Spin effects are observed in ballistic transport in the tens' millitesla range of the external field, and are attributed to switching between Zeeman and Stern-Gerlach modes -- the former dominating at low e…
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We fabricated a hybrid structure in which cobalt and permalloy micromagnets produce a local in-plane spin-dependent potential barrier for high-mobility electrons at the GaAs/AlGaAs interface. Spin effects are observed in ballistic transport in the tens' millitesla range of the external field, and are attributed to switching between Zeeman and Stern-Gerlach modes -- the former dominating at low electron densities.
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Submitted 13 April, 2004;
originally announced April 2004.
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Electrically tunable GHz oscillations in doped GaAs-AlAs superlattices
Authors:
J. Kastrup,
R. Hey,
K. H. Ploog,
H. T. Grahn,
L. L. Bonilla,
M. Kindelan,
M. Moscoso,
A. Wacker
Abstract:
Tunable oscillatory modes of electric-field domains in doped semiconductor superlattices are reported. The experimental investigations demonstrate the realization of tunable, GHz frequencies in GaAs-AlAs superlattices covering the temperature region from 5 to 300 K. The orgin of the tunable oscillatory modes is determined using an analytical and a numerical modeling of the dynamics of domain for…
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Tunable oscillatory modes of electric-field domains in doped semiconductor superlattices are reported. The experimental investigations demonstrate the realization of tunable, GHz frequencies in GaAs-AlAs superlattices covering the temperature region from 5 to 300 K. The orgin of the tunable oscillatory modes is determined using an analytical and a numerical modeling of the dynamics of domain formation. Three different oscillatory modes are found. Their presence depends on the actual shape of the drift velocity curve, the do** density, the boundary condition, and the length of the superlattice. For most bias regions, the self-sustained oscillations are due to the formation, motion, and recycling of the domain boundary inside the superlattice. For some biases, the strengths of the low and high field domain change periodically in time with the domain boundary being pinned within a few quantum wells. The dependency of the frequency on the coupling leads to the prediction of a new type of tunable GHz oscillator based on semiconductor superlattices.
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Submitted 23 July, 1997;
originally announced July 1997.
