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Shallow core levels, or how to determine the do** and $T_c$ of Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ and Bi$_{2}$Sr$_2$CuO$_{6+δ}$ without cooling
Authors:
Tonica Valla,
Asish K. Kundu,
Petar Pervan,
Ivo Pletikosić,
Ilya K. Drozdov,
Zebin Wu,
Genda D. Gu
Abstract:
Determining the do** level in high-temperature cuprate superconductors is crucial for understanding the origin of superconductivity in these materials and for unlocking their full potential. However, accurately determining the do** level remains a significant challenge due to a complex interplay of factors and limitations in various measurement techniques. In particular, in Bi$_{2}$Sr$_2$CuO…
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Determining the do** level in high-temperature cuprate superconductors is crucial for understanding the origin of superconductivity in these materials and for unlocking their full potential. However, accurately determining the do** level remains a significant challenge due to a complex interplay of factors and limitations in various measurement techniques. In particular, in Bi$_{2}$Sr$_2$CuO$_{6+δ}$ and Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$, where the mobile carriers are introduced by non-stoichiometric oxygen $δ$, the determination has been extremely problematic. Here, we study the do** dependence of the electronic structure of these materials in angle-resolved photoemission and find that both the do** level, $p$, and the superconducting transition temeprature, $T_c$ can be precisely determined from the binding energy of the Bi $5d$ core-levels. The measurements can be performed at room temperature, enabling the determination of $p$ and $T_c$ without cooling the samples. This should be very helpful for further studies of these materials.
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Submitted 28 May, 2024;
originally announced May 2024.
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Electronic structure-property relationship in an Al0.5TiZrPdCuNi high-entropy alloy
Authors:
Emil Babić,
Ignacio A. Figueroa,
Vesna Mikšić Trontl,
Petar Pervan,
Ivo Pletikosić,
Ramir Ristić,
Amra Salčinović Fetić,
Željko Skoko,
Damir Starešinić,
Tonica Valla,
Krešo Zadro
Abstract:
The valence band (VB) structure of an Al0.5TiZrPdCuNi high-entropy alloy (HEA) obtained from X-ray photoelectron spectroscopy has been compared to that recently calculated by Odbadrakh et al, 2019. Both experimental and theoretical VBs show split-band structures typical of alloys composed from the early (TE) and late (TL) transition metals. Accordingly, several properties of this alloy (both in th…
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The valence band (VB) structure of an Al0.5TiZrPdCuNi high-entropy alloy (HEA) obtained from X-ray photoelectron spectroscopy has been compared to that recently calculated by Odbadrakh et al, 2019. Both experimental and theoretical VBs show split-band structures typical of alloys composed from the early (TE) and late (TL) transition metals. Accordingly, several properties of this alloy (both in the glassy and crystalline state) associated with the electronic structure (ES), are compared with those of similar TE-TL alloys. The comparison shows in addition to the usual dependence on the total TL content strong effect of alloying with Al on the density of states at the Fermi level, N(EF) and on the magnetic susceptibility of Al0.5TiZrPdCuNi HEA, which is like that of conventional glassy alloys, such as Zr-Cu-Al ones. Despite some similarity between the shapes of theoretical and corresponding experimental VBs there are significant quantitative differences between them which should be taken into account in any future studies of ES in HEAs and other compositionally complex alloys (CCA).
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Submitted 16 February, 2024;
originally announced February 2024.
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Possible Topological Superconductivity in a Topological Crystalline Insulator (Pb$_{1-x}$Sn$_x$)$_{1-y}$In$_y$Te
Authors:
I. Pletikosic,
T. Yilmaz,
B. Sinkovic,
A. P. Weber,
G. D. Gu,
T. Valla
Abstract:
Superconductivity in topological insulators is expected to show very unconventional features such as $p+ip$ order parameter, Majorana fermions etc. However, the intrinsic superconductivity has been observed in a very limited number of materials in which the pairing symmetry is still a matter of debate. Here, we study the topological crystalline insulator (Pb$_{1-x}$Sn$_x$)$_{1-y}$In$_y$Te, where a…
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Superconductivity in topological insulators is expected to show very unconventional features such as $p+ip$ order parameter, Majorana fermions etc. However, the intrinsic superconductivity has been observed in a very limited number of materials in which the pairing symmetry is still a matter of debate. Here, we study the topological crystalline insulator (Pb$_{1-x}$Sn$_x$)$_{1-y}$In$_y$Te, where a peculiar insulator to superconductor transition was previously reported near the gap inversion transition, when the system is nearly a 3-dimensional Dirac semimetal. Both the existence of superconductivity near the 3-dimensional Dirac semimetal and the occurrence of insulator to superconductor transition in an isotropic material is highly unusual. We suggest that the observed phenomena are related to an intrinsic instability of a 3-dimensional Dirac semimetal state in (Pb$_{1-x}$Sn$_x$)$_{1-y}$In$_y$Te and "flattening" of the bulk valence and conduction bands as they acquire a Mexican hat-like dispersion on the inverted side of the phase diagram. This favors the pairing instability if the chemical potential is pinned to these flat regions.
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Submitted 15 November, 2023;
originally announced November 2023.
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Hole-Like Fermi Surface in the Overdoped Non-Superconducting Bi$_{1.8}$Pb$_{0.4}$Sr$_2$CuO$_{6+δ}$
Authors:
T. Valla,
P. Pervan,
I. Pletikosić,
I. K. Drozdov,
Asish K. Kundu,
Zebin Wu,
G. D. Gu
Abstract:
In high-temperature cuprate superconductors, the anti-ferromagnetic spin fluctuations are thought to have a very important role in naturally producing an attractive interaction between the electrons in the $d$-wave channel. The connection between superconductivity and spin fluctuations is expected to be especially consequential at the overdoped end point of the superconducting dome. In some materi…
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In high-temperature cuprate superconductors, the anti-ferromagnetic spin fluctuations are thought to have a very important role in naturally producing an attractive interaction between the electrons in the $d$-wave channel. The connection between superconductivity and spin fluctuations is expected to be especially consequential at the overdoped end point of the superconducting dome. In some materials, that point seems to coincide with a Lifshitz transition, where the Fermi surface changes from the hole-like centered at ($π, π$) to the electron-like, centered at the $Γ$ point causing a loss of large momentum anti-ferromagnetic fluctuations. Here, we study the do** dependence of the electronic structure of Bi$_{1.8}$Pb$_{0.4}$Sr$_2$CuO$_{6+δ}$ in angle-resolved photoemission and find that the superconductivity vanishes at lower do** than at which the Lifshitz transition occurs. This requires a more detailed re-examination of a spin-fluctuation scenario.
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Submitted 16 June, 2021; v1 submitted 23 December, 2020;
originally announced December 2020.
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Multi hole bands and quasi 2-dimensionality in Cr2Ge2Te6 studied by angle-resolved photoemission spectroscopy
Authors:
T. Yilmaz,
R. M. Geilhufe,
I. Pletikosić,
G. W. Fernando,
R. J. Cava,
T. Valla,
E. Vescovo,
B. Sinkovic
Abstract:
In the present work, we investigate the electronic structure of the two-dimensional (2D) ferromagnet Cr2Ge2Te6 by photoemission spectroscopy and ab initio calculations. Our results demonstrate the presence of multiple hole-type bands in the vicinity of the Fermi level indicating that the material can support high electrical conductivity by manipulating the chemical potential. Also, our photon ener…
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In the present work, we investigate the electronic structure of the two-dimensional (2D) ferromagnet Cr2Ge2Te6 by photoemission spectroscopy and ab initio calculations. Our results demonstrate the presence of multiple hole-type bands in the vicinity of the Fermi level indicating that the material can support high electrical conductivity by manipulating the chemical potential. Also, our photon energy dependent angle resolved photoemission experiment revealed that several of the hole bands exhibit weak dispersion with varied incident photon energy providing experimental signature for its two dimensionality. These findings can pave the way for further studies towards the application of Cr2Ge2Te6 in electronic devices.
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Submitted 9 December, 2020; v1 submitted 28 October, 2020;
originally announced October 2020.
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Optical and photoemission investigation of structural and magnetic transitions in the iron-based superconductor Sr$_\mathbf{0.67}$Na$_\mathbf{0.33}$Fe$_\mathbf{2}$As$_\mathbf{2}$
Authors:
R. Yang,
J. W. Huang,
N. Zaki,
I. Pletikosic,
Y. M. Dai,
H. Xiao,
T. Valla,
P. D. Johnson,
X. J. Zhou,
X. G. Qiu,
C. C. Homes
Abstract:
We report the temperature-dependent optical conductivity and ARPES studies of the iron-based superconductor (SC) Sr$_{0.67}$Na$_{0.33}$Fe$_2$As$_2$ in the high-temperature tetragonal paramagnetic phase; below the structural and magnetic transitions at $T_{\rm N}\simeq$125 K in the orthorhombic spin-density-wave (SDW)-like phase, and $T_r\simeq$42 K in the reentrant tetragonal double-Q magnetic pha…
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We report the temperature-dependent optical conductivity and ARPES studies of the iron-based superconductor (SC) Sr$_{0.67}$Na$_{0.33}$Fe$_2$As$_2$ in the high-temperature tetragonal paramagnetic phase; below the structural and magnetic transitions at $T_{\rm N}\simeq$125 K in the orthorhombic spin-density-wave (SDW)-like phase, and $T_r\simeq$42 K in the reentrant tetragonal double-Q magnetic phase where both charge and SDW order exist; and below the SC transition at $T_c\simeq$10 K. The free-carrier component in the optical conductivity is described by two Drude contributions; one strong and broad, the other weak and narrow. The broad Drude component decreases dramatically below $T_{\rm N}$ and $T_r$, with much of its strength being transferred to a bound excitation in the mid-infrared, while the narrow Drude component shows no anomalies at either of the transitions, actually increasing in strength at low temperature while narrowing dramatically. The behavior of an infrared-active mode suggests zone-folding below $T_r$. Below $T_c$ the dramatic decrease in the low-frequency optical conductivity signals the formation of a SC energy gap. ARPES reveals hole-like bands at the center of the Brillouin zone (BZ), with both electron- and hole-like bands at the corners. Below $T_{\rm N}$, the hole pockets at the center of the BZ decrease in size, consistent with the behavior of the broad Drude component; while below $T_r$ the electron-like bands shift and split, giving rise to a low-energy excitation in the optical conductivity at ~20 meV. The magnetic states, with resulting SDW and charge-SDW order, respectively, lead to a significant reconstruction of the Fermi surface that has profound implications for the transport originating from the electron and hole pockets, but appears to have relatively little impact on the SC in this material.
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Submitted 30 December, 2019; v1 submitted 7 October, 2019;
originally announced October 2019.
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Reconstruction of the Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ Fermi Surface
Authors:
T. Valla,
I. Pletikosić,
I. K. Drozdov,
G. D. Gu
Abstract:
The effects of structural supermodulation with the period $λ\approx26$ Å\ along the $b$-axis of Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ have been observed in photoemission studies from the early days as the presence of diffraction replicas of the intrinsic electronic structure. Although predicted to affect the electronic structure of the Cu-O plane, the influence of supermodulation potential on Cu-O electro…
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The effects of structural supermodulation with the period $λ\approx26$ Å\ along the $b$-axis of Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ have been observed in photoemission studies from the early days as the presence of diffraction replicas of the intrinsic electronic structure. Although predicted to affect the electronic structure of the Cu-O plane, the influence of supermodulation potential on Cu-O electrons has never been observed in photoemission. In the present study, we clearly see, for the first time, the effects on the Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ electronic structure - we observe a hybridization of the intrinsic bands with the supermodulation replica bands in the form of avoided crossings and a corresponding reconstruction of the Fermi surface. We estimate the hybridization gap, $2Δ_h\sim25$ meV in the slightly underdoped samples. The hybridization weakens with do** and the anti-crossing can no longer be resolved in strongly overdoped samples. In contrast, the shadow replica, shifted by $(π, π)$, is found not to hybridize with the original bands within our detection limits.
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Submitted 2 January, 2020; v1 submitted 25 September, 2019;
originally announced September 2019.
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A New Magnetic Topological Quantum Material Candidate by Design
Authors:
Xin Gui,
Ivo Pletikosic,
Huibo Cao,
Hung-Ju Tien,
Xitong Xu,
Ruidan Zhong,
Guangqiang Wang,
Tay-Rong Chang,
Shuang Jia,
Tonica Valla,
Weiwei Xie,
Robert J. Cava
Abstract:
Magnetism, when combined with an unconventional electronic band structure, can give rise to forefront electronic properties such as the quantum anomalous Hall effect, axion electrodynamics, and Majorana fermions. Here we report the characterization of high-quality crystals of EuSn$_2$P$_2$, a new quantum material specifically designed to engender unconventional electronic states plus magnetism. Eu…
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Magnetism, when combined with an unconventional electronic band structure, can give rise to forefront electronic properties such as the quantum anomalous Hall effect, axion electrodynamics, and Majorana fermions. Here we report the characterization of high-quality crystals of EuSn$_2$P$_2$, a new quantum material specifically designed to engender unconventional electronic states plus magnetism. EuSn$_2$P$_2$ has a layered, Bi$_2$Te$_3$-type structure. Ferromagnetic interactions dominate the Curie-Weiss susceptibility, but a transition to antiferromagnetic ordering occurs near 30 K. Neutron diffraction reveals that this is due to two-dimensional ferromagnetic spin alignment within individual Eu layers and antiferromagnetic alignment between layers - this magnetic state surrounds the Sn-P layers at low temperatures. The bulk electrical resistivity is sensitive to the magnetism. Electronic structure calculations reveal that EuSn$_2$P$_2$ might be a strong topological insulator, which can be a new magnetic topological quantum material (MTQM) candidate. The calculations show that surface states should be present, and they are indeed observed by ARPES measurements.
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Submitted 9 March, 2019;
originally announced March 2019.
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Phase Diagram of Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ Revisited
Authors:
I. K. Drozdov,
I. Pletikosić,
C. -K. Kim,
K. Fujita,
G. D. Gu,
J. C. Séamus Davis,
P. D. Johnson,
I. Božović,
T. Valla
Abstract:
In cuprate superconductors, the do** of carriers into the parent Mott insulator induces superconductivity and various other phases whose characteristic temperatures are typically plotted versus the do** level $p$. In most materials, $p$ cannot be determined from the chemical composition, but it is derived from the superconducting transition temperature, $T_\mathrm{c}$, using the assumption tha…
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In cuprate superconductors, the do** of carriers into the parent Mott insulator induces superconductivity and various other phases whose characteristic temperatures are typically plotted versus the do** level $p$. In most materials, $p$ cannot be determined from the chemical composition, but it is derived from the superconducting transition temperature, $T_\mathrm{c}$, using the assumption that $T_\mathrm{c}$ dependence on do** is universal. Here, we present angle-resolved photoemission studies of Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$, cleaved and annealed in vacuum or in ozone to reduce or increase the do** from the initial value corresponding to $T_\mathrm{c}=91$ K. We show that $p$ can be determined from the underlying Fermi surfaces and that $in-situ$ annealing allows map** of a wide do** regime, covering the superconducting dome and the non-superconducting phase on the overdoped side. Our results show a surprisingly smooth dependence of the inferred Fermi surface with do**. In the highly overdoped regime, the superconducting gap approaches the value of $2Δ_0=(4\pm1)k_\mathrm{B}T_\mathrm{c}$
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Submitted 13 November, 2018;
originally announced November 2018.
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Realization of a Type-II Nodal-Line Semimetal in Mg$_3$Bi$_2$
Authors:
Tay-Rong Chang,
Ivo Pletikosic,
Tai Kong,
Guang Bian,
Angus Huang,
Jonathan Denlinger,
Satya K. Kushwaha,
Boris Sinkovic,
Horng-Tay Jeng,
Tonica Valla,
Weiwei Xie,
Robert J. Cava
Abstract:
Nodal-line semimetals (NLSs) represent a new type of topological semimetallic beyond Weyl and Dirac semimetals in the sense that they host closed loops or open curves of band degeneracies in the Brillouin zone. Parallel to the classification of type-I and type-II Weyl semimetals, there are two types of NLSs. The conventional NLS phase, in which the two bands forming the nodal line have opposite si…
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Nodal-line semimetals (NLSs) represent a new type of topological semimetallic beyond Weyl and Dirac semimetals in the sense that they host closed loops or open curves of band degeneracies in the Brillouin zone. Parallel to the classification of type-I and type-II Weyl semimetals, there are two types of NLSs. The conventional NLS phase, in which the two bands forming the nodal line have opposite signs for their slopes along any direction perpendicular to the nodal line, has been proposed and realized in many compounds, whereas the exotic type-II NLS is very rare. Our first-principles calculations show that Mg$_3$Bi$_2$ is a material candidate that hosts a single type-II nodal loop around $Γ$. The band crossing is close to the Fermi level and the two crossing bands have the same sign in their slopes along the radial direction of the loop, indicating the type-II nature of the nodal line. Spin-orbit coupling generates only a small energy gap ($\sim$35 meV) at the nodal points and does not negate the band dispersion of Mg$_3$Bi$_2$ that yields the type-II nodal line. Based on this prediction we have synthesized Mg$_3$Bi$_2$ single crystals and confirmed the presence of the type-II nodal lines in the material. Our angle-resolved photoemission spectroscopy (ARPES) measurements agree well with our first-principles results and thus establish Mg$_3$Bi$_2$ as an ideal materials platform for studying the exotic properties of type-II nodal line semimetals.
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Submitted 24 November, 2017;
originally announced November 2017.
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Band structure of a IV-VI black phosphorus analogue, the thermoelectric SnSe
Authors:
I. Pletikosić,
F. von Rohr,
P. Pervan,
P. K. Das,
I. Vobornik,
R. J. Cava,
T. Valla
Abstract:
The success of black phosphorus in fast electronic and photonic devices is hindered by its rapid degradation in presence of oxygen. Orthorhombic tin selenide is a representative of group IV-VI binary compounds that are robust, isoelectronic, and share the same structure with black phosphorus. We measured the band structure of SnSe and found highly anisotropic valence bands that form several valley…
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The success of black phosphorus in fast electronic and photonic devices is hindered by its rapid degradation in presence of oxygen. Orthorhombic tin selenide is a representative of group IV-VI binary compounds that are robust, isoelectronic, and share the same structure with black phosphorus. We measured the band structure of SnSe and found highly anisotropic valence bands that form several valleys having fast dispersion within the layers and negligible dispersion across. This is exactly the band structure desired for efficient thermoelectric generation where SnSe has shown a great promise.
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Submitted 2 March, 2018; v1 submitted 13 July, 2017;
originally announced July 2017.
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Distinct Effects of Cr Bulk Do** and Surface Deposition on the Chemical Environment and Electronic Structure of the Topological Insulator Bi2Se3
Authors:
Turgut Yilmaza,
William Hines,
Fu-Chang Sun,
Ivo Pletikosić,
Joseph Budnick,
Tonica Valla,
Boris Sinkovic
Abstract:
In this report, it is shown that Cr doped into the bulk and Cr deposited on the surface of Bi2Se3 films produced by molecular beam epitaxy (MBE) have strikingly different effects on both the electronic structure and chemical environment.
In this report, it is shown that Cr doped into the bulk and Cr deposited on the surface of Bi2Se3 films produced by molecular beam epitaxy (MBE) have strikingly different effects on both the electronic structure and chemical environment.
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Submitted 10 June, 2017;
originally announced June 2017.
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Differences in chemical do** matter - Superconductivity in Ti1-xTaxSe2 but not in Ti1-xNbxSe2
Authors:
Huixia Luo,
Weiwei Xie,
**g Tao,
Ivo Pletikosic,
Tonica Valla,
Girija S. Sahasrabudhe,
Gavin Osterhoudt,
Erin Sutton,
Kenneth S. Burch,
Elizabeth M. Seibel,
Jason W. Krizan,
Yimei Zhu,
Robert J. Cava
Abstract:
We report that 1T-TiSe2, an archetypical layered transition metal dichalcogenide, becomes superconducting when Ta is substituted for Ti but not when Nb is substituted for Ti. This is unexpected because Nb and Ta should be chemically equivalent electron donors. Superconductivity emerges near x = 0.02 for Ti1-xTaxSe2, while for Ti1-xNbxSe2, no superconducting transitions are observed above 0.4 K. Th…
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We report that 1T-TiSe2, an archetypical layered transition metal dichalcogenide, becomes superconducting when Ta is substituted for Ti but not when Nb is substituted for Ti. This is unexpected because Nb and Ta should be chemically equivalent electron donors. Superconductivity emerges near x = 0.02 for Ti1-xTaxSe2, while for Ti1-xNbxSe2, no superconducting transitions are observed above 0.4 K. The equivalent chemical nature of the dopants is confirmed by X-ray photoelectron spectroscopy. ARPES and Raman scattering studies show similarities and differences between the two systems, but the fundamental reasons why the Nb and Ta dopants yield such different behavior are unknown. We present a comparison of the electronic phase diagrams of many electron-doped 1T-TiSe2 systems, showing that they behave quite differently, which may have broad implications in the search for new superconductors. We propose that superconducting Ti0.8Ta0.2Se2 will be suitable for devices and other studies based on exfoliated crystal flakes.
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Submitted 29 January, 2016;
originally announced January 2016.
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A strong-topological-metal material with multiple Dirac cones
Authors:
Huiwen Ji,
I Pletikosić,
Q. D. Gibson,
Girija Sahasrabudhe,
T. Valla,
R. J. Cava
Abstract:
We report a new, cleavable, strong-topological-metal, Zr2Te2P, which has the same tetradymite-type crystal structure as the topological insulator Bi2Te2Se. Instead of being a semiconductor, however, Zr2Te2P is metallic with a pseudogap between 0.2 and 0.7 eV above the fermi energy (EF). Inside this pseudogap, two Dirac dispersions are predicted: one is a surface-originated Dirac cone protected by…
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We report a new, cleavable, strong-topological-metal, Zr2Te2P, which has the same tetradymite-type crystal structure as the topological insulator Bi2Te2Se. Instead of being a semiconductor, however, Zr2Te2P is metallic with a pseudogap between 0.2 and 0.7 eV above the fermi energy (EF). Inside this pseudogap, two Dirac dispersions are predicted: one is a surface-originated Dirac cone protected by time-reversal symmetry (TRS), while the other is a bulk-originated and slightly gapped Dirac cone with a largely linear dispersion over a 2 eV energy range. A third surface TRS-protected Dirac cone is predicted, and observed using ARPES, making Zr2Te2P the first system to realize TRS-protected Dirac cones at M points. The high anisotropy of this Dirac cone is similar to the one in the hypothetical Dirac semimetal BiO2. We propose that if EF can be tuned into the pseudogap where the Dirac dispersions exist, it may be possible to observe ultrahigh carrier mobility and large magnetoresistance in this material.
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Submitted 1 December, 2015;
originally announced December 2015.
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Sn-doped Bi1.1Sb0.9Te2S, a bulk topological insulator with ideal properties
Authors:
S. K. Kushwaha,
I. Pletikosić,
T. Liang,
A. Gyenis,
S. H. Lapidus,
Yao Tian,
He Zhao,
K. S. Burch,
Huiwen Ji,
A. V. Fedorov,
Ali Yazdani,
N. P. Ong,
T. Valla,
R. J. Cava
Abstract:
A long-standing issue in topological insulator research has been to find a material that provides an ideal platform for characterizing topological surface states without interference from bulk electronic states and can reliably be fabricated as bulk crystals. This material would be a bulk insulator, have a surface state Dirac point energy well isolated from the bulk valence and conduction bands, h…
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A long-standing issue in topological insulator research has been to find a material that provides an ideal platform for characterizing topological surface states without interference from bulk electronic states and can reliably be fabricated as bulk crystals. This material would be a bulk insulator, have a surface state Dirac point energy well isolated from the bulk valence and conduction bands, have high surface state electronic mobility, and be growable as large, high quality bulk single crystals. Here we show that this major materials obstacle in the field is overcome by crystals of lightly Sn-doped Bi1.1Sb0.9Te2S (Sn-BSTS) grown by the Vertical Bridgeman method, which we characterize here via angle-resolved photoemission spectroscopy, scanning tunneling microscopy, transport studies of the bulk and surface states, and X-ray diffraction and Raman scattering. We present this new material as a bulk topological insulator that can be reliably grown and studied in many laboratories around the world.
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Submitted 14 August, 2015;
originally announced August 2015.
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Surface-state-dominated transport in crystals of the topological crystalline insulator In-doped Pb$_{1-x}$Sn$_x$Te
Authors:
Ruidan Zhong,
Xugang He,
John A. Schneeloch,
Cheng Zhang,
Tiansheng Liu,
Ivo Pletikosic,
Qiang Li,
Wei Ku,
Tonica Valla,
J. M. Tranquada,
Genda Gu
Abstract:
Three-dimensional topological insulators and topological crystalline insulators represent new quantum states of matter, which are predicted to have insulating bulk states and spin-momentum-locked gapless surface states. Experimentally, it has proven difficult to achieve the high bulk resistivity that would allow surface states to dominate the transport properties over a substantial temperature ran…
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Three-dimensional topological insulators and topological crystalline insulators represent new quantum states of matter, which are predicted to have insulating bulk states and spin-momentum-locked gapless surface states. Experimentally, it has proven difficult to achieve the high bulk resistivity that would allow surface states to dominate the transport properties over a substantial temperature range. Here we report a series of indium-doped Pb$_{1-x}$Sn$_x$Te compounds that manifest huge bulk resistivities together with strong evidence of topological surface states, based on thickness-dependent transport studies and magnetoresistance measurements. For these bulk-insulating materials, the surface states determine the resistivity for temperatures approaching 30 K.
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Submitted 9 February, 2015;
originally announced February 2015.
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Observation of the chiral magnetic effect in ZrTe5
Authors:
Qiang Li,
Dmitri E. Kharzeev,
Cheng Zhang,
Yuan Huang,
I. Pletikosic,
A. V. Fedorov,
R. D. Zhong,
J. A. Schneeloch,
G. D. Gu,
T. Valla
Abstract:
The chiral magnetic effect is the generation of electric current induced by chirality imbalance in the presence of magnetic field. It is a macroscopic manifestation of the quantum anomaly in relativistic field theory of chiral fermions (massless spin $1/2$ particles with a definite projection of spin on momentum) -- a dramatic phenomenon arising from a collective motion of particles and antipartic…
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The chiral magnetic effect is the generation of electric current induced by chirality imbalance in the presence of magnetic field. It is a macroscopic manifestation of the quantum anomaly in relativistic field theory of chiral fermions (massless spin $1/2$ particles with a definite projection of spin on momentum) -- a dramatic phenomenon arising from a collective motion of particles and antiparticles in the Dirac sea. The recent discovery of Dirac semimetals with chiral quasi-particles opens a fascinating possibility to study this phenomenon in condensed matter experiments. Here we report on the first observation of chiral magnetic effect through the measurement of magneto-transport in zirconium pentatelluride, ZrTe_5. Our angle-resolved photoemission spectroscopy experiments show that this material's electronic structure is consistent with a 3D Dirac semimetal. We observe a large negative magnetoresistance when magnetic field is parallel with the current. The measured quadratic field dependence of the magnetoconductance is a clear indication of the chiral magnetic effect. The observed phenomenon stems from the effective transmutation of Dirac semimetal into a Weyl semimetal induced by the parallel electric and magnetic fields that represent a topologically nontrivial gauge field background.
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Submitted 19 December, 2014;
originally announced December 2014.
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Electronic structure basis for the titanic magnetoresistance in WTe$_2$
Authors:
I. Pletikosić,
Mazhar N. Ali,
A. Fedorov,
R. J. Cava,
T. Valla
Abstract:
The electronic structure basis of the extremely large magnetoresistance in layered non-magnetic tungsten ditelluride has been investigated by angle-resolved photoelectron spectroscopy. Hole and electron pockets of approximately the same size were found at the Fermi level, suggesting that carrier compensation should be considered the primary source of the effect. The material exhibits a highly anis…
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The electronic structure basis of the extremely large magnetoresistance in layered non-magnetic tungsten ditelluride has been investigated by angle-resolved photoelectron spectroscopy. Hole and electron pockets of approximately the same size were found at the Fermi level, suggesting that carrier compensation should be considered the primary source of the effect. The material exhibits a highly anisotropic, quasi one-dimensional Fermi surface from which the pronounced anisotropy of the magnetoresistance follows. A change in the Fermi surface with temperature was found and a high-density-of-states band that may take over conduction at higher temperatures and cause the observed turn-on behavior of the magnetoresistance in WTe$_2$ was identified.
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Submitted 14 July, 2014;
originally announced July 2014.
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Absence of a Proximity Effect in a Topological Insulator on a Cuprate Superconductor: Bi2Se3/Bi2Sr2CaCu2O8
Authors:
T. Yilmaz,
I. Pletikosic,
A. P. Weber,
J. T. Sadowski,
G. D. Gu,
A. N. Caruso,
B. Sinkovic,
T. Valla
Abstract:
Proximity-induced superconductivity in a 3D topological insulator represents a new avenue for observing zero-energy Majorana fermions inside vortex cores. Relatively small gaps and low transition temperatures of conventional s-wave superconductors put the hard constraints on these experiments. Significantly larger gaps and higher transition temperatures in cuprate superconductors might be an attra…
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Proximity-induced superconductivity in a 3D topological insulator represents a new avenue for observing zero-energy Majorana fermions inside vortex cores. Relatively small gaps and low transition temperatures of conventional s-wave superconductors put the hard constraints on these experiments. Significantly larger gaps and higher transition temperatures in cuprate superconductors might be an attractive alternative to considerably relax these constraints, but it is not clear whether the proximity effect would be effective in heterostructures involving cuprates and topological insulators. Here, we present angle-resolved photoemission studies of thin Bi2Se3 films grown in-situ on optimally doped Bi2Sr2CaCu2O8 substrates that show the absence of proximity-induced gaps on the surfaces of Bi2Se3 films as thin as a 1.5 quintuple layer. These results suggest that the superconducting proximity effect between a cuprate superconductor and a topological insulator is strongly suppressed, likely due to a very short coherence length along the c-axis, incompatible crystal and pairing symmetries at the interface, small size of the topological surface state Fermi surface and adverse effects of a strong spin-orbit coupling in the topological material.
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Submitted 17 March, 2014;
originally announced March 2014.
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Inducing Lifshitz transition by extrinsic do** of surface bands in topological crystalline insulator Pb$_{1-x}$Sn$_{x}$Se
Authors:
Ivo Pletikosić,
Genda D. Gu,
Tonica Valla
Abstract:
Narrow gap semiconductor Pb$_{1-x}$Sn$_{x}$Se was investigated for topologically protected surface states in its rock-salt structural phase for x=0.45, 0.23, 0.15, and 0. Angle-resolved photoelectron spectroscopy of intrinsically p-doped samples showed clear indication of two Dirac cones, eccentric about the time-reversal invariant point X of the surface Brillouin zone for all but the x=0 sample.…
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Narrow gap semiconductor Pb$_{1-x}$Sn$_{x}$Se was investigated for topologically protected surface states in its rock-salt structural phase for x=0.45, 0.23, 0.15, and 0. Angle-resolved photoelectron spectroscopy of intrinsically p-doped samples showed clear indication of two Dirac cones, eccentric about the time-reversal invariant point X of the surface Brillouin zone for all but the x=0 sample. Adsorption of alkalies gradually filled the surface bands with electrons, driving the x>0 topological crystalline insulator systems through Lifshitz transitions, and from a hole- to electron-like Fermi surface. The electron-doped bands in x>0 samples exhibited the full configuration of the Dirac cones, also confirming electron-hole symmetry of the surface bands.
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Submitted 17 March, 2014;
originally announced March 2014.
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Comparison of Sn-doped and nonstoichiometric vertical-Bridgman-grown crystals of the topological insulator Bi2Te2Se
Authors:
S. K. Kushwaha,
Q. D. Gibson,
J. Xiong,
I. Pletikosic,
A. P. Weber,
A. V. Fedorov,
N. P. Ong,
T. Valla,
R. J. Cava
Abstract:
A comparative study of the properties of topological insulator Bi2Te2Se (BTS) crystals grown by the vertical Bridgeman method is described. Two defect mechanisms that create acceptor impurities to compensate for the native n-type carriers are compared: Bi excess, and light Sn do**. Both methods yield low carrier concentrations and an n-p crossover over the length of the grown crystal boules, but…
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A comparative study of the properties of topological insulator Bi2Te2Se (BTS) crystals grown by the vertical Bridgeman method is described. Two defect mechanisms that create acceptor impurities to compensate for the native n-type carriers are compared: Bi excess, and light Sn do**. Both methods yield low carrier concentrations and an n-p crossover over the length of the grown crystal boules, but lower carrier concentrations and higher resistivities are obtained for the Sn-doped crystals, which reach carrier concentrations as low as 8 x 1014 cm-3. Further, the temperature dependent resistivities for the Sn-doped crystals display strongly activated behavior at high temperatures, with a characteristic energy of half the bulk band gap. The (001) cleaved Sn-doped BTS crystals display high quality Shubnikov de Haas (SdH) quantum oscillations due to the topological surface state electrons. Angle resolved photoelectron spectroscopy (ARPES) characterization shows that the Fermi energy (EF) for the Sn-doped crystals falls cleanly in the surface states with no interference from the bulk bands, that the Dirac point for the surface states lies approximately 60 meV below the top of the bulk valence band maximum, and allows for a determination of the bulk and surface state carrier concentrations as a function of Energy near EF. Electronic structure calculations that compare Bi excess and Sn dopants in BTS demonstrate that Sn acts as a special impurity, with a localized impurity band that acts as a charge buffer occurring inside the bulk band gap. We propose that the special resonant level character of Sn in BTS gives rise to the exceptionally low carrier concentrations and activated resistivities observed.
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Submitted 15 March, 2014;
originally announced March 2014.
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The mechanism of caesium intercalation of graphene
Authors:
M. Petrovic,
I. Srut Rakic,
S. Runte,
C. Busse,
J. T. Sadowski,
P. Lazic,
I. Pletikosic,
Z. -H. Pan,
M. Milun,
P. Pervan,
N. Atodiresei,
R. Brako,
D. Sokcevic,
T. Valla,
T. Michely,
M. Kralj
Abstract:
Properties of many layered materials, including copper- and iron-based superconductors, topological insulators, graphite and epitaxial graphene can be manipulated by inclusion of different atomic and molecular species between the layers via a process known as intercalation. For example, intercalation in graphite can lead to superconductivity and is crucial in the working cycle of modern batteries…
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Properties of many layered materials, including copper- and iron-based superconductors, topological insulators, graphite and epitaxial graphene can be manipulated by inclusion of different atomic and molecular species between the layers via a process known as intercalation. For example, intercalation in graphite can lead to superconductivity and is crucial in the working cycle of modern batteries and supercapacitors. Intercalation involves complex diffusion processes along and across the layers, but the microscopic mechanisms and dynamics of these processes are not well understood. Here we report on a novel mechanism for intercalation and entrapment of alkali-atoms under epitaxial graphene. We find that the intercalation is adjusted by the van der Waals interaction, with the dynamics governed by defects anchored to graphene wrinkles. Our findings are relevant for the future design and application of graphene-based nano-structures. Similar mechanisms can also play a role for intercalation of layered materials.
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Submitted 18 November, 2013; v1 submitted 15 November, 2013;
originally announced November 2013.
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Quasiparticle Interference on the Surface of Topological Crystalline Insulator Pb(1-x)Sn(x)Se
Authors:
A. Gyenis,
I. K. Drozdov,
S. Nadj-Perge,
O. B. Jeong,
J. Seo,
I. Pletikosic,
T. Valla,
G. D. Gu,
A. Yazdani
Abstract:
Topological crystalline insulators represent a novel topological phase of matter in which the surface states are protected by discrete point group-symmetries of the underlying lattice. Rock-salt lead-tin-selenide alloy is one possible realization of this phase which undergoes a topological phase transition upon changing the lead content. We used scanning tunneling microscopy (STM) and angle resolv…
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Topological crystalline insulators represent a novel topological phase of matter in which the surface states are protected by discrete point group-symmetries of the underlying lattice. Rock-salt lead-tin-selenide alloy is one possible realization of this phase which undergoes a topological phase transition upon changing the lead content. We used scanning tunneling microscopy (STM) and angle resolved photoemission spectroscopy (ARPES) to probe the surface states on (001) Pb$_{1-x}$Sn$_{x}$Se in the topologically non-trivial (x=0.23) and topologically trivial (x=0) phases. We observed quasiparticle interference with STM on the surface of the topological crystalline insulator and demonstrated that the measured interference can be understood from ARPES studies and a simple band structure model. Furthermore, our findings support the fact that Pb$_{0.77}$Sn$_{0.23}$Se and PbSe have different topological nature.
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Submitted 1 October, 2013; v1 submitted 31 May, 2013;
originally announced June 2013.
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Finding the bare band: Electron coupling to two phonon modes in potassium-doped graphene on Ir(111)
Authors:
Ivo Pletikosić,
Marko Kralj,
Milorad Milun,
Petar Pervan
Abstract:
We analyze renormalization of the pi band of n-doped epitaxial graphene on Ir(111) induced by electron-phonon coupling. Our procedure of extracting the bare band relies on recursive self-consistent refining of the functional form of the bare-band until the convergence. We demonstrate that the components of the self-energy, as well as the spectral intensity obtained from angle-resolved photoelectro…
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We analyze renormalization of the pi band of n-doped epitaxial graphene on Ir(111) induced by electron-phonon coupling. Our procedure of extracting the bare band relies on recursive self-consistent refining of the functional form of the bare-band until the convergence. We demonstrate that the components of the self-energy, as well as the spectral intensity obtained from angle-resolved photoelectron spectroscopy (ARPES) show that the renormalization is due to the coupling to two distinct phonon excitations. From the velocity renormalization and an increase of the imaginary part of the self-energy we find the electron-phonon coupling constant to be ~0.2, which is in fair agreement with a previous study of the same system, despite the notable difference in the width of spectroscopic curves. Our experimental results also suggest that potassium intercalated between graphene and Ir(111) does not introduce any additional increase of the quasiparticle scattering rate.
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Submitted 17 April, 2012; v1 submitted 3 January, 2012;
originally announced January 2012.
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Graphene on Ir(111) characterized by angle-resolved photoemission
Authors:
M. Kralj,
I. Pletikosic,
M. Petrovic,
P. Pervan,
M. Milun,
A. T. N'Diaye,
C. Busse,
T. Michely,
J. Fujii,
I. Vobornik
Abstract:
Angle resolved photoelectron spectroscopy (ARPES) is extensively used to characterize the dependence of the electronic structure of graphene on Ir(111) on the preparation process. ARPES findings reveal that temperature programmed growth alone or in combination with chemical vapor deposition leads to graphene displaying sharp electronic bands. The photoemission intensity of the Dirac cone is monito…
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Angle resolved photoelectron spectroscopy (ARPES) is extensively used to characterize the dependence of the electronic structure of graphene on Ir(111) on the preparation process. ARPES findings reveal that temperature programmed growth alone or in combination with chemical vapor deposition leads to graphene displaying sharp electronic bands. The photoemission intensity of the Dirac cone is monitored as a function of the increasing graphene area. Electronic features of the moiré superstructure present in the system, namely minigaps and replica bands are examined and used as robust features to evaluate graphene uniformity. The overall dispersion of the pi-band is analyzed. Finally, by the variation of photon energy, relative changes of the pi- and sigma-band intensities are demonstrated.
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Submitted 9 August, 2011; v1 submitted 20 May, 2011;
originally announced May 2011.
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Dirac Cones and Minigaps for Graphene on Ir(111)
Authors:
I. Pletikosic,
M. Kralj,
P. Pervan,
R. Brako,
J. Coraux,
A. T. N'Diaye,
C. Busse,
T. Michely
Abstract:
Epitaxial graphene on Ir(111) prepared in excellent structural quality is investigated by angle-resolved photoelectron spectroscopy. It clearly displays a Dirac cone with the Dirac point shifted only slightly above the Fermi level. The moire resulting from the overlaid graphene and Ir(111) surface lattices imposes a superperiodic potential giving rise to Dirac cone replicas and the opening of mi…
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Epitaxial graphene on Ir(111) prepared in excellent structural quality is investigated by angle-resolved photoelectron spectroscopy. It clearly displays a Dirac cone with the Dirac point shifted only slightly above the Fermi level. The moire resulting from the overlaid graphene and Ir(111) surface lattices imposes a superperiodic potential giving rise to Dirac cone replicas and the opening of minigaps in the band structure.
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Submitted 13 February, 2009; v1 submitted 17 July, 2008;
originally announced July 2008.
