The hot pick-up technique for batch assembly of van der Waals heterostructures
Authors:
Filippo Pizzocchero,
Lene Gammelgaard,
Bjarke Sørensen Jessen,
José M. Caridad,
Lei Wang,
James Hone,
Peter Bøggild,
Timothy J. Booth
Abstract:
The assembly of individual two-dimensional materials into van der Waals heterostructures enables the construction of layered three-dimensional materials with desirable electronic and optical properties. A core problem in the fabrication of these structures is the formation of clean interfaces between the individual two-dimensional materials which would affect device performance. We present here a…
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The assembly of individual two-dimensional materials into van der Waals heterostructures enables the construction of layered three-dimensional materials with desirable electronic and optical properties. A core problem in the fabrication of these structures is the formation of clean interfaces between the individual two-dimensional materials which would affect device performance. We present here a technique for the rapid batch fabrication of van der Waals heterostructures, demonstrated by the controlled production of 22 mono-, bi- and trilayer graphene stacks encapsulated in hexagonal boron nitride with close to 100% yield. For the monolayer devices we found semiclassical mean free paths up to 0.9 micrometer, with the narrowest samples showing clear indications of the transport being affected by boundary scattering. The presented method readily lends itself to fabrication of van der Waals heterostructures in both ambient and controlled atmospheres, while the ability to assemble pre-patterned layers paves the way for complex three-dimensional architectures.
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Submitted 8 May, 2016;
originally announced May 2016.
Multi-terminal electrical transport measurements of molybdenum disulphide using van der Waals heterostructure device platform
Authors:
Xu Cui,
Gwan-Hyoung Lee,
Young Duck Kim,
Ghidewon Arefe,
Pinshane Y. Huang,
Chul-Ho Lee,
Daniel A. Chenet,
Xian Zhang,
Lei Wang,
Fan Ye,
Filippo Pizzocchero,
Bjarke S. Jessen,
Kenji Watanabe,
Takashi Taniguchi,
David A. Muller,
Tony Low,
Philip Kim,
James Hone
Abstract:
Atomically thin two-dimensional (2D) semiconductors such as molybdenum disulphide (MoS2) hold great promise in electrical, optical, and mechanical devices and display novel physical phenomena such as coupled spin-valley physics and the valley Hall effect. However, the electron mobility of mono- and few-layer MoS2 has so far been substantially below theoretically predicted limits, particularly at l…
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Atomically thin two-dimensional (2D) semiconductors such as molybdenum disulphide (MoS2) hold great promise in electrical, optical, and mechanical devices and display novel physical phenomena such as coupled spin-valley physics and the valley Hall effect. However, the electron mobility of mono- and few-layer MoS2 has so far been substantially below theoretically predicted limits, particularly at low temperature (T), which has hampered efforts to observe its intrinsic quantum transport behaviors. Potential sources of disorder and scattering include both defects such as sulfur vacancies in the MoS2 itself, and extrinsic sources such as charged impurities and remote optical phonons from oxide dielectrics. To reduce extrinsic scattering and approach the intrinsic limit, we developed a van der Waals (vdW) heterostructure device platform where MoS2 layers are fully encapsulated within hexagonal boron nitride (hBN), and electrically contacted in a multi-terminal geometry using gate-tunable graphene electrodes. Multi-terminal magneto-transport measurements show dramatic improvements in performance, including a record-high Hall mobility reaching 34,000 cm2/Vs for 6-layer MoS2 at low T. Comparison to theory shows a decrease of 1-2 orders of magnitude in the density of charged impurities, indicating that performance at low T in previous studies was limited by extrinsic factors rather than defects in the MoS2. We also observed Shubnikov-de Haas (SdH) oscillations for the first time in high-mobility monolayer and few-layer MoS2. This novel device platform therefore opens up a new way toward measurements of intrinsic properties and the study of quantum transport phenomena in 2D semiconducting materials.
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Submitted 22 December, 2014; v1 submitted 18 December, 2014;
originally announced December 2014.
Large-Area Nanopatterned Graphene For Ultrasensitive Gas Sensing
Authors:
Alberto Cagliani,
David Mackenzie,
Lisa Katharina Tschammer,
Filippo Pizzocchero,
Kristoffer Almdal,
Peter Bøggild
Abstract:
Chemical vapor deposited graphene is nanopatterned by a spherical block-copolymer etch mask. The use of spherical rather than cylindrical block copolymers allows homogeneous patterning of cm-scale areas without any substrate surface treatment. Raman spectroscopy was used to study the controlled generation of point defects in the graphene lattice with increasing etching time, confirming that alongs…
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Chemical vapor deposited graphene is nanopatterned by a spherical block-copolymer etch mask. The use of spherical rather than cylindrical block copolymers allows homogeneous patterning of cm-scale areas without any substrate surface treatment. Raman spectroscopy was used to study the controlled generation of point defects in the graphene lattice with increasing etching time, confirming that alongside the nanomesh patterning, the nanopatterned CVD graphene presents a high defect density between the mesh holes. The nanopatterned samples showed sensitivities for NO2 of more than one order of magnitude higher than for non-patterned graphene. NO2 concentrations as low as 300 ppt were detected with an ultimate detection limit of tens of ppt. This is so far the smallest value reported for not UV illuminated graphene chemiresistive NO2 gas sensors. The drastic improvement in the gas sensitivity is believed to be due to the high adsorption site density, thanks to the combination of edge sites and point defect sites. This work opens the possibility of large area fabrication of nanopatterned graphene with extreme density of adsorption sites for sensing applications.
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Submitted 19 March, 2014;
originally announced March 2014.
