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Correlation of Blocking and Néel Temperatures in Ultra-thin Metallic Antiferromagnets
Authors:
Kutay Akin,
Hasan Piskin,
Ege Selvi,
Emre Demircanli,
Sevval Ari,
Mohammad Hassan Ramezan zadeh,
Bayram Kocaman,
Ozhan Ozatay
Abstract:
Nonvolatile spintronics-based devices that utilize electron spin both to store and transport information face a great challenge when scaled to nano dimensions due to loss of thermal stability and stray field induced disturbance in closely packed magnetic bits. The potential replacement of ferromagnetic materials with antiferromagnets may overcome some of these issues owing to the superior robustne…
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Nonvolatile spintronics-based devices that utilize electron spin both to store and transport information face a great challenge when scaled to nano dimensions due to loss of thermal stability and stray field induced disturbance in closely packed magnetic bits. The potential replacement of ferromagnetic materials with antiferromagnets may overcome some of these issues owing to the superior robustness of sublattice spin orientations to magnetic field disturbance as long as theyare kept well below the Néel temperature, which is hard to measure with conventional methods, especially in the ultrathin limit. In this work, we have employed spin pum** from a soft ferromagnetic NiFe layer into widely used ultrathin metallic antiferromagnet Ir20Mn80, FeMn, PtMn, PdMn or NiMn with thicknesses in the 0.7-3 nm range, as a probe to detect dam** enhancement during magnetic phase transitions. Independent measurements of the blocking temperature with magnetometry reveal that temperature dependent shifts in the resonance peaks can also be used to measure the blocking temperature, allowing the analysis of the correlation between the Néel and blocking temperatures in trilayers with permalloy and antiferromagnetic layer separated by a 3 nm thick spacer layer. The thickness dependent characterization of thermal stability in antiferromagnets provides a key element for scalable and ultrafast antiferromagnetic spintronics.
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Submitted 27 September, 2023;
originally announced September 2023.
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Experimental determination of the orientation of tilted magnetic anisotropy by measuring Hall voltage
Authors:
Hasan Piskin,
Erdem Demirci,
Mustafa Ozturk,
Numan Akdogan
Abstract:
The orientation of the tilted magnetic anisotropy has crucial importance in many spintronic devices. However, it is very challenging to determine it especially in very small structures produced by lithography. Here, we propose a new experimental method to directly and accurately measure both the polar and azimuthal angles of a tilted magnetic anisotropy. By using the proposed experimental method,…
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The orientation of the tilted magnetic anisotropy has crucial importance in many spintronic devices. However, it is very challenging to determine it especially in very small structures produced by lithography. Here, we propose a new experimental method to directly and accurately measure both the polar and azimuthal angles of a tilted magnetic anisotropy. By using the proposed experimental method, we have successfully determined the out-of-plane and in-plane angles of the tilted magnetic anisotropy in a micro-structured multilayer thin film. The orientation of the tilted magnetic anisotropy in the sample has also been confirmed by the theoretical simulations proving the accuracy of the method.
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Submitted 28 February, 2020;
originally announced March 2020.
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Shapeable planar Hall sensor with a stable sensitivity under concave and convex bending
Authors:
B. Özer,
H. Pişkin,
N. Akdoğan
Abstract:
A shapeable planar Hall sensor has been fabricated by lift-off a bilayer structure of NiFe(10 nm)/IrMn (8 nm) grown on a Kapton/PDMS substrate without using a buffer layer. The sensor exhibits a magnetic field sensitivity of 0.74 $μ$V/Oe.mA and provides a stable response under repetitive ON/OFF experiments. The concave and convex bending measurements indicate that the AMR voltage of the sensor is…
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A shapeable planar Hall sensor has been fabricated by lift-off a bilayer structure of NiFe(10 nm)/IrMn (8 nm) grown on a Kapton/PDMS substrate without using a buffer layer. The sensor exhibits a magnetic field sensitivity of 0.74 $μ$V/Oe.mA and provides a stable response under repetitive ON/OFF experiments. The concave and convex bending measurements indicate that the AMR voltage of the sensor is very sensitive to the stress and strain. However, the planar Hall sensitivity is independent from them with a stable linear region and unchanged peak positions in the magnetic field axis. This type of behaviour has been observed for the first time in the planar Hall sensors. Therefore, this novel device can fulfill simultaneous multifunctional sensing of small magnetic fields, stress and strain. This makes it promising for tactile sensing applications in humanoid robotics.
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Submitted 25 January, 2019;
originally announced January 2019.
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Large enhancement of sensitivity in NiFe/Pt/IrMn-based planar Hall sensors by modifying interface and sensor architecture
Authors:
H. Pişkin,
N. Akdoğan
Abstract:
The planar Hall sensitivity of obliquely deposited NiFe(10)/Pt(tPt) /IrMn(8)/Pt(3) (nm) trilayer structures has been investigated by introducing interfacial modification and altering sensor geometry. The peak-to-peak PHE voltage and AMR ratio of the sensors exhibit an oscillatory increase as a function of Pt thickness. This behaviour was attributed to the strong electron spin-orbit scattering at t…
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The planar Hall sensitivity of obliquely deposited NiFe(10)/Pt(tPt) /IrMn(8)/Pt(3) (nm) trilayer structures has been investigated by introducing interfacial modification and altering sensor geometry. The peak-to-peak PHE voltage and AMR ratio of the sensors exhibit an oscillatory increase as a function of Pt thickness. This behaviour was attributed to the strong electron spin-orbit scattering at the NiFe/Pt interface of the trilayers. The temperature-dependent PHE signal profiles reveal that the Pt-inserted PHE sensors are stable even at 390 K with a high signal-to-noise ratio and an increased sensitivity due to reduction of exchange bias. In order to further increase the sensitivity, we have fabricated PHE sensors for a fixed Pt thickness of 8 Å by using sensor architectures of a cross, tilted-cross, one-ring and five-ring junctions. We have obtained a sensitivity of 3.82 μV/Oe.mA for the cross junction, while it considerably increased to 298.5 μV/Oe.mA for five-ring sensor geometry. The real-time voltage profile of the PHE sensors demonstrate that the sensor states are very stable under various magnetic fields and sensor output voltages turn back to their initial offset values. This provides a great potential for the NiFe/Pt/IrMn-based planar Hall sensors in many sensing applications.
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Submitted 30 November, 2018;
originally announced November 2018.
