Showing 1–44 of 44 results for author: Pioro-Ladrière, M

Towards scalable cryogenic quantum dot biasing using memristor-based DC sources

Authors: Pierre-Antoine Mouny, Raphaël Dawant, Patrick Dufour, Matthieu Valdenaire, Serge Ecoffey, Michel Pioro-Ladrière, Yann Beillard, Dominique Drouin

Abstract: Cryogenic memristor-based DC sources offer a promising avenue for in situ biasing of quantum dot arrays. In this study, we present experimental results and discuss the scaling potential for such DC sources. We first demonstrate the operation of a commercial discrete operational amplifier down to 1.2K which is used on the DC source prototype. Then, the tunability of the memristor-based DC source is… ▽ More Cryogenic memristor-based DC sources offer a promising avenue for in situ biasing of quantum dot arrays. In this study, we present experimental results and discuss the scaling potential for such DC sources. We first demonstrate the operation of a commercial discrete operational amplifier down to 1.2K which is used on the DC source prototype. Then, the tunability of the memristor-based DC source is validated by performing several 250mV-DC sweeps with a resolution of 10mV at room temperature and at 1.2K. Additionally, the DC source prototype exhibits a limited output drift of $\approx1\mathrm{μVs^{-1}}$ at 1.2K. This showcases the potential of memristor-based DC sources for quantum dot biasing. Limitations in power consumption and voltage resolution using discrete components highlight the need for a fully integrated and scalable complementary metal-oxide-semiconductor-based (CMOS-based) approach. To address this, we propose to monolithically co-integrate emerging non-volatile memories (eNVMs) and 65nm CMOS circuitry. Simulations reveal a reduction in power consumption, down to $\mathrm{10μW}$ per DC source and in footprint. This allows for the integration of up to one million eNVM-based DC sources at the 4.2K stage of a dilution fridge, paving the way for near term large-scale quantum computing applications. △ Less

Submitted 16 April, 2024; originally announced April 2024.

Analog programming of CMOS-compatible Al$_2$O$_3$/TiO$_\textrm{2-x}$ memristor at 4.2 K after metal-insulator transition suppression by cryogenic reforming

Authors: Pierre-Antoine Mouny, Raphaël Dawant, Bastien Galaup, Serge Ecoffey, Michel Pioro-Ladrière, Yann Beilliard, Dominique Drouin

Abstract: The exploration of memristors' behavior at cryogenic temperatures has become crucial due to the growing interest in quantum computing and cryogenic electronics. In this context, our study focuses on the characterization at cryogenic temperatures (4.2 K) of TiO$_\textrm{2-x}$-based memristors fabricated with a CMOS-compatible etch-back process. We demonstrate a so-called cryogenic reforming (CR) te… ▽ More The exploration of memristors' behavior at cryogenic temperatures has become crucial due to the growing interest in quantum computing and cryogenic electronics. In this context, our study focuses on the characterization at cryogenic temperatures (4.2 K) of TiO$_\textrm{2-x}$-based memristors fabricated with a CMOS-compatible etch-back process. We demonstrate a so-called cryogenic reforming (CR) technique performed at 4.2 K to overcome the well-known metal-insulator transition (MIT) which limits the analog behavior of memristors at low temperatures. This cryogenic reforming process was found to be reproducible and led to a durable suppression of the MIT. This process allowed to reduce by approximately 20% the voltages required to perform DC resistive switching at 4.2 K. Additionally, conduction mechanism studies of memristors before and after cryogenic reforming from 4.2 K to 300 K revealed different behaviors above 100 K, indicating a potential change in the conductive filament stoichiometry. The reformed devices exhibit a conductance level that is 50 times higher than ambient-formed memristor, and the conduction drop between 300 K and 4.2 K is 100 times smaller, indicating the effectiveness of the reforming process. More importantly, CR enables analog programming at 4.2 K with typical read voltages. Suppressing the MIT improved the analog switching dynamics of the memristor leading to approximately 250% larger on/off ratios during long-term depression (LTD)/long-term potentiation (LTP) resistance tuning. This enhancement opens up the possibility of using TiO$_{\textrm{2-x}}$-based memristors to be used as synapses in neuromorphic computing at cryogenic temperatures. △ Less

Submitted 28 July, 2023; originally announced July 2023.

Generalized fast quasi-adiabatic population transfer for improved qubit readout, shuttling, and noise mitigation

Authors: F. Fehse, M. David, M. Pioro-Ladrière, W. A. Coish

Abstract: Population-transfer schemes are commonly used to convert information robustly stored in some quantum system for manipulation and memory into more macroscopic degrees of freedom for measurement. These schemes may include, e.g., spin-to-charge conversion for spins in quantum dots, detuning of charge qubits between a noise-insensitive operating point and a measurement point, spatial shuttling of qubi… ▽ More Population-transfer schemes are commonly used to convert information robustly stored in some quantum system for manipulation and memory into more macroscopic degrees of freedom for measurement. These schemes may include, e.g., spin-to-charge conversion for spins in quantum dots, detuning of charge qubits between a noise-insensitive operating point and a measurement point, spatial shuttling of qubits encoded in spins or ions, and parity-to-charge conversion schemes for qubits based on Majorana zero modes. A common strategy is to use a slow (adiabatic) conversion. However, in an adiabatic scheme, the adiabaticity conditions, on the one hand, and accumulation of errors through dephasing, leakage, and energy relaxation processes on the other hand, limit the fidelity that can be achieved. Here, we give explicit fast quasiadiabatic (fast-QUAD) conversion strategies (pulse shapes) beyond the adiabatic approximation that allow for optimal state conversion. In contrast with many other approaches, here we account for noise in combination with pulse sha**. Although we restrict to noise sources that can be modeled by a classical fluctuating parameter, we allow generally for anisotropic nonGaussian noise that is nevertheless sufficiently weak to lead to a small error. Inspired by analytic methods that have been developed for dynamical decoupling theory, we provide a general framework for unique noise mitigation strategies that can be tailored to the system and environment of interest. △ Less

Submitted 26 June, 2023; v1 submitted 14 March, 2022; originally announced March 2022.

Comments: The new version includes text changes for clarity and a new charge qubit section. 15 pages, 9 figures

Journal ref: Phys. Rev. B 107, 245303 (2023)

Memristor-based cryogenic programmable DC sources for scalable in-situ quantum-dot control

Authors: Pierre-Antoine Mouny, Yann Beilliard, Sébastien Graveline, Marc-Antoine Roux, Abdelouadoud El Mesoudy, Raphaël Dawant, Pierre Gliech, Serge Ecoffey, Fabien Alibart, Michel Pioro-Ladrière, Dominique Drouin

Abstract: Current quantum systems based on spin qubits are controlled by classical electronics located outside the cryostat at room temperature. This approach creates a major wiring bottleneck, which is one of the main roadblocks toward truly scalable quantum computers. Thus, we propose a scalable memristor-based programmable DC source that could be used to perform biasing of quantum dots inside of the cryo… ▽ More Current quantum systems based on spin qubits are controlled by classical electronics located outside the cryostat at room temperature. This approach creates a major wiring bottleneck, which is one of the main roadblocks toward truly scalable quantum computers. Thus, we propose a scalable memristor-based programmable DC source that could be used to perform biasing of quantum dots inside of the cryostat (i.e. in-situ). This novel cryogenic approach would enable to control the applied voltage on the electrostatic gates by programming the resistance of the memristors, thus storing in the latter the appropriate conditions to form the quantum dots. In this study, we first demonstrate multilevel resistance programming of a TiO2-based memristors at 4.2 K, an essential feature to achieve voltage tunability of the memristor-based DC source. We then report hardwarebased simulations of the electrical performance of the proposed DC source. A cryogenic TiO2-based memristor model fitted on our experimental data at 4.2 K was used to show a 1 V voltage range and 100 uV in-situ memristor-based DC source. Finally, we simulate the biasing of double quantum dots enabling sub-2 minutes in-situ charge stability diagrams. This demonstration is a first step towards more advanced cryogenic applications for resistive memories such as cryogenic control electronics for quantum computers. △ Less

Submitted 22 March, 2022; v1 submitted 14 March, 2022; originally announced March 2022.

Miniaturizing neural networks for charge state autotuning in quantum dots

Authors: Stefanie Czischek, Victor Yon, Marc-Antoine Genest, Marc-Antoine Roux, Sophie Rochette, Julien Camirand Lemyre, Mathieu Moras, Michel Pioro-Ladrière, Dominique Drouin, Yann Beilliard, Roger G. Melko

Abstract: A key challenge in scaling quantum computers is the calibration and control of multiple qubits. In solid-state quantum dots, the gate voltages required to stabilize quantized charges are unique for each individual qubit, resulting in a high-dimensional control parameter space that must be tuned automatically. Machine learning techniques are capable of processing high-dimensional data - provided th… ▽ More A key challenge in scaling quantum computers is the calibration and control of multiple qubits. In solid-state quantum dots, the gate voltages required to stabilize quantized charges are unique for each individual qubit, resulting in a high-dimensional control parameter space that must be tuned automatically. Machine learning techniques are capable of processing high-dimensional data - provided that an appropriate training set is available - and have been successfully used for autotuning in the past. In this paper, we develop extremely small feed-forward neural networks that can be used to detect charge-state transitions in quantum dot stability diagrams. We demonstrate that these neural networks can be trained on synthetic data produced by computer simulations, and robustly transferred to the task of tuning an experimental device into a desired charge state. The neural networks required for this task are sufficiently small as to enable an implementation in existing memristor crossbar arrays in the near future. This opens up the possibility of miniaturizing powerful control elements on low-power hardware, a significant step towards on-chip autotuning in future quantum dot computers. △ Less

Submitted 30 November, 2021; v1 submitted 8 January, 2021; originally announced January 2021.

Comments: 13 pages, 7 figures

Journal ref: Mach. Learn.: Sci. Technol. 3 015001 (2022)

Bell-state tomography in a silicon many-electron artificial molecule

Authors: Ross C. C. Leon, Chih Hwan Yang, Jason C. C. Hwang, Julien Camirand Lemyre, Tuomo Tanttu, Wei Huang, Jonathan Y. Huang, Fay E. Hudson, Kohei M. Itoh, Arne Laucht, Michel Pioro-Ladrière, Andre Saraiva, Andrew S. Dzurak

Abstract: An error-corrected quantum processor will require millions of qubits, accentuating the advantage of nanoscale devices with small footprints, such as silicon quantum dots. However, as for every device with nanoscale dimensions, disorder at the atomic level is detrimental to qubit uniformity. Here we investigate two spin qubits confined in a silicon double-quantum-dot artificial molecule. Each quant… ▽ More An error-corrected quantum processor will require millions of qubits, accentuating the advantage of nanoscale devices with small footprints, such as silicon quantum dots. However, as for every device with nanoscale dimensions, disorder at the atomic level is detrimental to qubit uniformity. Here we investigate two spin qubits confined in a silicon double-quantum-dot artificial molecule. Each quantum dot has a robust shell structure and, when operated at an occupancy of 5 or 13 electrons, has single spin-$\frac{1}{2}$ valence electron in its $p$- or $d$-orbital, respectively. These higher electron occupancies screen atomic-level disorder. The larger multielectron wavefunctions also enable significant overlap between neighbouring qubit electrons, while making space for an interstitial exchange-gate electrode. We implement a universal gate set using the magnetic field gradient of a micromagnet for electrically-driven single qubit gates, and a gate-voltage-controlled inter-dot barrier to perform two-qubit gates by pulsed exchange coupling. We use this gate set to demonstrate a Bell state preparation between multielectron qubits with fidelity 90.3%, confirmed by two-qubit state tomography using spin parity measurements. △ Less

Submitted 10 August, 2020; originally announced August 2020.

Journal ref: Nature Communications 12, 3228 (2021)

Algorithm for automated tuning of a quantum dot into the single-electron regime

Authors: Maxime Lapointe-Major, Olivier Germain, Julien Camirand Lemyre, Dany Lachance-Quirion, Sophie Rochette, Félix Camirand Lemyre, Michel Pioro-Ladrière

Abstract: We report an algorithm designed to perform computer-automated tuning of a single quantum dot with a charge sensor. The algorithm performs an adaptive measurement sequence of sub-sized stability diagrams until the single-electron regime is identified and reached. For each measurement, the signal processing module removes the physical background of the charge sensor to generate a binary image of cha… ▽ More We report an algorithm designed to perform computer-automated tuning of a single quantum dot with a charge sensor. The algorithm performs an adaptive measurement sequence of sub-sized stability diagrams until the single-electron regime is identified and reached. For each measurement, the signal processing module removes the physical background of the charge sensor to generate a binary image of charge transitions. Then, the image analysis module identifies the position and number of lines using two line detection schemes that are robust to noise and missing data. △ Less

Submitted 26 November, 2019; originally announced November 2019.

Journal ref: Phys. Rev. B 102, 085301 (2020)

Optimized micromagnet geometries for Majorana zero modes in low g-factor materials

Authors: Sara Turcotte, Samuel Boutin, Julien Camirand Lemyre, Ion Garate, Michel Pioro-Ladrière

Abstract: Solid-state experimental realizations of Majorana bound states are based on materials with strong intrinsic spin-orbit interactions. In this paper, we explore an alternative approach where spin-orbit coupling is induced artificially through a nonuniform magnetic field that originates from an array of micromagnets. Using a recently developed optimization algorithm, we find suitable magnet geometrie… ▽ More Solid-state experimental realizations of Majorana bound states are based on materials with strong intrinsic spin-orbit interactions. In this paper, we explore an alternative approach where spin-orbit coupling is induced artificially through a nonuniform magnetic field that originates from an array of micromagnets. Using a recently developed optimization algorithm, we find suitable magnet geometries for the emergence of topological superconductivity in wires without intrinsic spin-orbit coupling. We confirm the robustness of Majorana bound states against disorder and periodic potentials whose amplitudes do not exceed the Zeeman energy. Furthermore, we identify low g-factor materials commonly used in mesoscopic physics experiments as viable candidates for Majorana devices. △ Less

Submitted 3 February, 2021; v1 submitted 12 April, 2019; originally announced April 2019.

Comments: 13 pages, 9 figures, published version

Journal ref: Phys. Rev. B 102, 125425 (2020)

Silicon quantum processor unit cell operation above one Kelvin

Authors: C. H. Yang, R. C. C. Leon, J. C. C. Hwang, A. Saraiva, T. Tanttu, W. Huang, J. Camirand Lemyre, K. W. Chan, K. Y. Tan, F. E. Hudson, K. M. Itoh, A. Morello, M. Pioro-Ladrière, A. Laucht, A. S. Dzurak

Abstract: Quantum computers are expected to outperform conventional computers for a range of important problems, from molecular simulation to search algorithms, once they can be scaled up to large numbers of quantum bits (qubits), typically millions. For most solid-state qubit technologies, e.g. those using superconducting circuits or semiconductor spins, scaling poses a significant challenge as every addit… ▽ More Quantum computers are expected to outperform conventional computers for a range of important problems, from molecular simulation to search algorithms, once they can be scaled up to large numbers of quantum bits (qubits), typically millions. For most solid-state qubit technologies, e.g. those using superconducting circuits or semiconductor spins, scaling poses a significant challenge as every additional qubit increases the heat generated, while the cooling power of dilution refrigerators is severely limited at their operating temperature below 100 mK. Here we demonstrate operation of a scalable silicon quantum processor unit cell, comprising two qubits confined to quantum dots (QDs) at $\sim$1.5 Kelvin. We achieve this by isolating the QDs from the electron reservoir, initialising and reading the qubits solely via tunnelling of electrons between the two QDs. We coherently control the qubits using electrically-driven spin resonance (EDSR) in isotopically enriched silicon $^{28}$Si, attaining single-qubit gate fidelities of 98.6% and coherence time $T_2^*$ = 2$μ$s during `hot' operation, comparable to those of spin qubits in natural silicon at millikelvin temperatures. Furthermore, we show that the unit cell can be operated at magnetic fields as low as 0.1 T, corresponding to a qubit control frequency of 3.5 GHz, where the qubit energy is well below the thermal energy. The unit cell constitutes the core building block of a full-scale silicon quantum computer, and satisfies layout constraints required by error correction architectures. Our work indicates that a spin-based quantum computer could be operated at elevated temperatures in a simple pumped $^4$He system, offering orders of magnitude higher cooling power than dilution refrigerators, potentially enabling classical control electronics to be integrated with the qubit array. △ Less

Submitted 19 June, 2019; v1 submitted 25 February, 2019; originally announced February 2019.

Journal ref: Nature 580, 350-354 (2020)

Coherent spin control of s-, p-, d- and f-electrons in a silicon quantum dot

Authors: R. C. C. Leon, C. H. Yang, J. C. C. Hwang, J. Camirand Lemyre, T. Tanttu, W. Huang, K. W. Chan, K. Y. Tan, F. E. Hudson, K. M. Itoh, A. Morello, A. Laucht, M. Pioro-Ladriere, A. Saraiva, A. S. Dzurak

Abstract: Once the periodic properties of elements were unveiled, chemical bonds could be understood in terms of the valence of atoms. Ideally, this rationale would extend to quantum dots, often termed artificial atoms, and quantum computation could be performed by merely controlling the outer-shell electrons of dot-based qubits. Imperfections in the semiconductor material, including at the atomic scale, di… ▽ More Once the periodic properties of elements were unveiled, chemical bonds could be understood in terms of the valence of atoms. Ideally, this rationale would extend to quantum dots, often termed artificial atoms, and quantum computation could be performed by merely controlling the outer-shell electrons of dot-based qubits. Imperfections in the semiconductor material, including at the atomic scale, disrupt this analogy between atoms and quantum dots, so that real devices seldom display such a systematic many-electron arrangement. We demonstrate here an electrostatically-defined quantum dot that is robust to disorder, revealing a well defined shell structure. We observe four shells (31 electrons) with multiplicities given by spin and valley degrees of freedom. We explore various fillings consisting of a single valence electron -- namely 1, 5, 13 and 25 electrons -- as potential qubits, and we identify fillings that yield a total spin-1 on the dot. An integrated micromagnet allows us to perform electrically-driven spin resonance (EDSR). Higher shell states are shown to be more susceptible to the driving field, leading to faster Rabi rotations of the qubit. We investigate the impact of orbital excitations of the p- and d-shell electrons on single qubits as a function of the dot deformation. This allows us to tune the dot excitation spectrum and exploit it for faster qubit control. Furthermore, hotspots arising from this tunable energy level structure provide a pathway towards fast spin initialisation. The observation of spin-1 states may be exploited in the future to study symmetry-protected topological states in antiferromagnetic spin chains and their application to quantum computing. △ Less

Submitted 6 May, 2019; v1 submitted 5 February, 2019; originally announced February 2019.

Journal ref: Nature Communications 11, 797 (2020)

Spin-orbit Interactions for Singlet-Triplet Qubits in Silicon

Authors: Patrick Harvey-Collard, N. Tobias Jacobson, Chloé Bureau-Oxton, Ryan M. Jock, Vanita Srinivasa, Andrew M. Mounce, Daniel R. Ward, John M. Anderson, Ronald P. Manginell, Joel R. Wendt, Tammy Pluym, Michael P. Lilly, Dwight R. Luhman, Michel Pioro-Ladrière, Malcolm S. Carroll

Abstract: Spin-orbit coupling is relatively weak for electrons in bulk silicon, but enhanced interactions are reported in nanostructures such as the quantum dots used for spin qubits. These interactions have been attributed to various dissimilar interface effects, including disorder or broken crystal symmetries. In this Letter, we use a double-quantum-dot qubit to probe these interactions by comparing the s… ▽ More Spin-orbit coupling is relatively weak for electrons in bulk silicon, but enhanced interactions are reported in nanostructures such as the quantum dots used for spin qubits. These interactions have been attributed to various dissimilar interface effects, including disorder or broken crystal symmetries. In this Letter, we use a double-quantum-dot qubit to probe these interactions by comparing the spins of separated singlet-triplet electron pairs. We observe both intravalley and intervalley mechanisms, each dominant for [110] and [100] magnetic field orientations, respectively, that are consistent with a broken crystal symmetry model. We also observe a third spin-flip mechanism caused by tunneling between the quantum dots. This improved understanding is important for qubit uniformity, spin control and decoherence, and two-qubit gates. △ Less

Submitted 11 June, 2019; v1 submitted 22 August, 2018; originally announced August 2018.

Journal ref: Phys. Rev. Lett. 122, 217702 (2019)

Probing a spin transfer controlled magnetic nanowire with a single nitrogen-vacancy spin in bulk diamond

Authors: Adrian Solyom, Zackary Flansberry, Märta A. Tschudin, Nathaniel Leitao, Michel Pioro-Ladrière, Jack C. Sankey, Lilian I. Childress

Abstract: The point-like nature and exquisite magnetic field sensitivity of the nitrogen vacancy (NV) center in diamond can provide information about the inner workings of magnetic nanocircuits in complement with traditional transport techniques. Here we use a single NV in bulk diamond to probe the stray field of a ferromagnetic nanowire controlled by spin transfer (ST) torques. We first report an unambiguo… ▽ More The point-like nature and exquisite magnetic field sensitivity of the nitrogen vacancy (NV) center in diamond can provide information about the inner workings of magnetic nanocircuits in complement with traditional transport techniques. Here we use a single NV in bulk diamond to probe the stray field of a ferromagnetic nanowire controlled by spin transfer (ST) torques. We first report an unambiguous measurement of ST tuned, parametrically driven, large-amplitude magnetic oscillations. At the same time, we demonstrate that such magnetic oscillations alone can directly drive NV spin transitions, providing a potential new means of control. Finally, we use the NV as a local noise thermometer, observing strong ST dam** of the stray field noise, consistent with magnetic cooling from room temperature to $\sim$150 K. △ Less

Submitted 12 July, 2018; v1 submitted 9 July, 2018; originally announced July 2018.

Comments: 6 pages, 5 figures, plus supplementary information

All-electrical universal control of a double quantum dot qubit in silicon MOS

Authors: Patrick Harvey-Collard, Ryan M. Jock, N. Tobias Jacobson, Andrew D. Baczewski, Andrew M. Mounce, Matthew J. Curry, Daniel R. Ward, John M. Anderson, Ronald P. Manginell, Joel R. Wendt, Martin Rudolph, Tammy Pluym, Michael P. Lilly, Michel Pioro-Ladrière, Malcolm S. Carroll

Abstract: Qubits based on transistor-like Si MOS nanodevices are promising for quantum computing. In this work, we demonstrate a double quantum dot spin qubit that is all-electrically controlled without the need for any external components, like micromagnets, that could complicate integration. Universal control of the qubit is achieved through spin-orbit-like and exchange interactions. Using single shot rea… ▽ More Qubits based on transistor-like Si MOS nanodevices are promising for quantum computing. In this work, we demonstrate a double quantum dot spin qubit that is all-electrically controlled without the need for any external components, like micromagnets, that could complicate integration. Universal control of the qubit is achieved through spin-orbit-like and exchange interactions. Using single shot readout, we show both DC- and AC-control techniques. The fabrication technology used is completely compatible with CMOS. △ Less

Submitted 6 February, 2018; originally announced February 2018.

Comments: The conference proceedings version incorrectly displays the orientation of the magnetic field in figure 1; this version is correct

Journal ref: in 2017 IEEE International Electron Devices Meeting (IEDM) (2017) pp. 36.5.1-36.5.4

Quantum dots with split enhancement gate tunnel barrier control

Authors: S. Rochette, M. Rudolph, A. -M. Roy, M. Curry, G. Ten Eyck, R. Manginell, J. Wendt, T. Pluym, S. M. Carr, D. Ward, M. P. Lilly, M. S. Carroll, M. Pioro-Ladrière

Abstract: We introduce a silicon metal-oxide-semiconductor quantum dot architecture based on a single polysilicon gate stack. The elementary structure consists of two enhancement gates separated spatially by a gap, one gate forming a reservoir and the other a quantum dot. We demonstrate, in three devices based on two different versions of this elementary structure, that a wide range of tunnel rates is attai… ▽ More We introduce a silicon metal-oxide-semiconductor quantum dot architecture based on a single polysilicon gate stack. The elementary structure consists of two enhancement gates separated spatially by a gap, one gate forming a reservoir and the other a quantum dot. We demonstrate, in three devices based on two different versions of this elementary structure, that a wide range of tunnel rates is attainable while maintaining single-electron occupation. A characteristic change in slope of the charge transitions as a function of the reservoir gate voltage, attributed to screening from charges in the reservoir, is observed in all devices, and is expected to play a role in the sizable tuning orthogonality of the split enhancement gate structure. The all-silicon process is expected to minimize strain gradients from electrode thermal mismatch, while the single gate layer should avoid issues related to overlayers (e.g., additional dielectric charge noise) and help improve yield. Finally, reservoir gate control of the tunnel barrier has implications for initialization, manipulation and readout schemes in multi-quantum dot architectures. △ Less

Submitted 5 March, 2019; v1 submitted 12 July, 2017; originally announced July 2017.

Comments: v1: 11 pages, 3 extended data tables, 1 extended data figure, v2: 5 pages, 3 figures, 5 pages supplementary material, 3 extended data tables, 2 extended data figures. Reorganization of the paper structure, modification of the title, abstract and introduction and conclusion, no change to the results and main text figures

Journal ref: Appl. Phys. Lett. 114, 083101 (2019)

High-fidelity single-shot readout for a spin qubit via an enhanced latching mechanism

Authors: Patrick Harvey-Collard, Benjamin D'Anjou, Martin Rudolph, N. Tobias Jacobson, Jason Dominguez, Gregory A. Ten Eyck, Joel R. Wendt, Tammy Pluym, Michael P. Lilly, William A. Coish, Michel Pioro-Ladrière, Malcolm S. Carroll

Abstract: The readout of semiconductor spin qubits based on spin blockade is fast but suffers from a small charge signal. Previous work suggested large benefits from additional charge map** processes, however uncertainties remain about the underlying mechanisms and achievable fidelity. In this work, we study the single-shot fidelity and limiting mechanisms for two variations of an enhanced latching readou… ▽ More The readout of semiconductor spin qubits based on spin blockade is fast but suffers from a small charge signal. Previous work suggested large benefits from additional charge map** processes, however uncertainties remain about the underlying mechanisms and achievable fidelity. In this work, we study the single-shot fidelity and limiting mechanisms for two variations of an enhanced latching readout. We achieve average single-shot readout fidelities > 99.3% and > 99.86% for the conventional and enhanced readout respectively, the latter being the highest to date for spin blockade. The signal amplitude is enhanced to a full one-electron signal while preserving the readout speed. Furthermore, layout constraints are relaxed because the charge sensor signal is no longer dependent on being aligned with the conventional (2, 0) - (1, 1) charge dipole. Silicon donor-quantum-dot qubits are used for this study, for which the dipole insensitivity substantially relaxes donor placement requirements. One of the readout variations also benefits from a parametric lifetime enhancement by replacing the spin-relaxation process with a charge-metastable one. This provides opportunities to further increase the fidelity. The relaxation mechanisms in the different regimes are investigated. This work demonstrates a readout that is fast, has one-electron signal and results in higher fidelity. It further predicts that going beyond 99.9% fidelity in a few microseconds of measurement time is within reach. △ Less

Submitted 31 January, 2018; v1 submitted 7 March, 2017; originally announced March 2017.

Comments: Supplementary information is included with the paper

Journal ref: Phys. Rev. X 8, 021046 (2018)

Coupling a single electron spin to a microwave resonator: Controlling transverse and longitudinal couplings

Authors: Félix Beaudoin, Dany Lachance-Quirion, W. A. Coish, Michel Pioro-Ladrière

Abstract: Microwave-frequency superconducting resonators are ideally suited to perform dispersive qubit readout, to mediate two-qubit gates, and to shuttle states between distant quantum systems. A prerequisite for these applications is a strong qubit-resonator coupling. Strong coupling between an electron-spin qubit and a microwave resonator can be achieved by correlating spin- and orbital degrees of freed… ▽ More Microwave-frequency superconducting resonators are ideally suited to perform dispersive qubit readout, to mediate two-qubit gates, and to shuttle states between distant quantum systems. A prerequisite for these applications is a strong qubit-resonator coupling. Strong coupling between an electron-spin qubit and a microwave resonator can be achieved by correlating spin- and orbital degrees of freedom. This correlation can be achieved through the Zeeman coupling of a single electron in a double quantum dot to a spatially inhomogeneous magnetic field generated by a nearby nanomagnet. In this paper, we consider such a device and estimate spin-resonator couplings of order ~ 1 MHz with realistic parameters. Further, through realistic simulations, we show that precise placement of the double dot relative to the nanomagnet allows to select between a purely longitudinal coupling (commuting with the bare spin Hamiltonian) and a purely transverse (spin non-conserving) coupling. Additionally, we suggest methods to mitigate dephasing and relaxation channels that are introduced in this coupling scheme. This analysis gives a clear route toward the realization of coherent state transfer between a microwave resonator and a single electron spin in a GaAs double quantum dot with a fidelity above 90%. Improved dynamical decoupling sequences, low-noise environments, and longer-lived microwave cavity modes may lead to substantially higher fidelities in the near future. △ Less

Submitted 17 October, 2016; v1 submitted 15 June, 2016; originally announced June 2016.

Comments: Version published in Nanotechnology: Focus issue on quantum information processing. 13 pages, 4 figures

Journal ref: Nanotechnology 27, 464003 (2016)

Magnetometry of micro-magnets with electrostatically defined Hall bars

Authors: Dany Lachance-Quirion, Julien Camirand Lemyre, Laurent Bergeron, Christian Sarra-Bournet, Michel Pioro-Ladrière

Abstract: Micro-magnets are key components for quantum information processing with individual spins, enabling arbitrary rotations and addressability. In this work, characterization of sub-micrometer sized CoFe ferromagnets is performed with Hall bars electrostatically defined in a two-dimensional electron gas. Due to the ballistic nature of electron transport in the cross junction of the Hall bar, anomalies… ▽ More Micro-magnets are key components for quantum information processing with individual spins, enabling arbitrary rotations and addressability. In this work, characterization of sub-micrometer sized CoFe ferromagnets is performed with Hall bars electrostatically defined in a two-dimensional electron gas. Due to the ballistic nature of electron transport in the cross junction of the Hall bar, anomalies such as the quenched Hall effect appear near zero external magnetic field, thus hindering the sensitivity of the magnetometer to small magnetic fields. However, it is shown that the sensitivity of the diffusive limit can be almost completely restored at low temperatures using a large current density in the Hall bar of about 10 A/m. Overcoming the size limitation of conventional etched Hall bars with electrostatic gating enables the measurement of magnetization curves of 440 nm wide micro-magnets with a signal-to-noise ratio above 10^3. Furthermore, the inhomogeneity of the stray magnetic field created by the micro-magnets is directly measured using the gate-voltage-dependent width of the sensitive area of the Hall bar. △ Less

Submitted 6 December, 2015; originally announced December 2015.

Comments: 5 pages, 4 figures

Journal ref: Appl. Phys. Lett. 107, 223103 (2015)

Coherent coupling between a quantum dot and a donor in silicon

Authors: Patrick Harvey-Collard, N. Tobias Jacobson, Martin Rudolph, Jason Dominguez, Gregory A. Ten Eyck, Joel R. Wendt, Tammy Pluym, John King Gamble, Michael P. Lilly, Michel Pioro-Ladrière, Malcolm S. Carroll

Abstract: Individual donors in silicon chips are used as quantum bits with extremely low error rates. However, physical realizations have been limited to one donor because their atomic size causes fabrication challenges. Quantum dot qubits, in contrast, are highly adjustable using electrical gate voltages. This adjustability could be leveraged to deterministically couple donors to quantum dots in arrays of… ▽ More Individual donors in silicon chips are used as quantum bits with extremely low error rates. However, physical realizations have been limited to one donor because their atomic size causes fabrication challenges. Quantum dot qubits, in contrast, are highly adjustable using electrical gate voltages. This adjustability could be leveraged to deterministically couple donors to quantum dots in arrays of qubits. In this work, we demonstrate the coherent interaction of a $^{31}$P donor electron with the electron of a metal-oxide-semiconductor quantum dot. We form a logical qubit encoded in the spin singlet and triplet states of the two-electron system. We show that the donor nuclear spin drives coherent rotations between the electronic qubit states through the contact hyperfine interaction. This provides every key element for compact two-electron spin qubits requiring only a single dot and no additional magnetic field gradients, as well as a means to interact with the nuclear spin qubit. △ Less

Submitted 18 October, 2017; v1 submitted 4 December, 2015; originally announced December 2015.

Comments: Published version

Journal ref: Nature Communications 8, 1029 (2017)

Robust micro-magnet design for fast electrical manipulations of single spins in quantum dots

Authors: Jun Yoneda, Tomohiro Otsuka, Tatsuki Takakura, Michel Pioro-Ladrière, Roland Brunner, Hong Lu, Takashi Nakajima, Toshiaki Obata, Akito Noiri, Christopher J. Palmstrøm, Arthur C. Gossard, Seigo Tarucha

Abstract: Tailoring spin coupling to electric fields is central to spintronics and spin-based quantum information processing. We present an optimal micromagnet design that produces appropriate stray magnetic fields to mediate fast electrical spin manipulations in nanodevices. We quantify the practical requirements for spatial field inhomogeneity and tolerance for misalignment with spins, and propose a desig… ▽ More Tailoring spin coupling to electric fields is central to spintronics and spin-based quantum information processing. We present an optimal micromagnet design that produces appropriate stray magnetic fields to mediate fast electrical spin manipulations in nanodevices. We quantify the practical requirements for spatial field inhomogeneity and tolerance for misalignment with spins, and propose a design scheme to improve the spin-rotation frequency (to exceed 50MHz in GaAs nanostructures). We then validate our design by experiments in separate devices. Our results will open a route to rapidly control solid-state electron spins with limited lifetimes and to study coherent spin dynamics in solids. △ Less

Submitted 7 July, 2015; originally announced July 2015.

Journal ref: Appl. Phys. Express 8, 084401 (2015)

Fast Electrical Control of Single Electron Spins in Quantum Dots with Vanishing Influence from Nuclear Spins

Authors: J. Yoneda, T. Otsuka, T. Nakajima, T. Takakura, T. Obata, M. Pioro-Ladrière, H. Lu, C. Palmstrøm, A. C. Gossard, S. Tarucha

Abstract: We demonstrate fast universal electrical spin manipulation with inhomogeneous magnetic fields. With fast Rabi frequency up to 127 MHz, we leave the conventional regime of strong nuclear-spin influence and observe a spin-flip fidelity > 96%, a distinct chevron Rabi pattern in the spectral-time domain, and spin resonance linewidth limited by the Rabi frequency, not by the dephasing rate. In addition… ▽ More We demonstrate fast universal electrical spin manipulation with inhomogeneous magnetic fields. With fast Rabi frequency up to 127 MHz, we leave the conventional regime of strong nuclear-spin influence and observe a spin-flip fidelity > 96%, a distinct chevron Rabi pattern in the spectral-time domain, and spin resonance linewidth limited by the Rabi frequency, not by the dephasing rate. In addition, we establish fast z-rotations up to 54 MHz by directly controlling the spin phase. Our findings will significantly facilitate tomography and error correction with electron spins in quantum dots. △ Less

Submitted 25 November, 2014; originally announced November 2014.

Comments: 23 pages, 6 figures

A Silicon Nanocrystal Tunnel Field Effect Transistor

Authors: Patrick Harvey-Collard, Dominique Drouin, Michel Pioro-Ladrière

Abstract: In this work, we demonstrate a silicon nanocrystal Field Effect Transistor (ncFET). Its operation is similar to that of a Tunnelling Field Effect Transistor (TFET) with two barriers in series. The tunnelling barriers are fabricated in very thin silicon dioxyde and the channel in intrinsic polycrystalline silicon. The absence of do** eliminates the problem of achieving sharp do** profiles at th… ▽ More In this work, we demonstrate a silicon nanocrystal Field Effect Transistor (ncFET). Its operation is similar to that of a Tunnelling Field Effect Transistor (TFET) with two barriers in series. The tunnelling barriers are fabricated in very thin silicon dioxyde and the channel in intrinsic polycrystalline silicon. The absence of do** eliminates the problem of achieving sharp do** profiles at the junctions, which has proven a challenge for large-scale integration and in principle allows scaling down the atomic level. The demonstrated ncFET features a 10$^4$ on/off current ratio at room temperature, a low 30 pA/$μ$m leakage current at a 0.5 V bias, an on-state current on a par with typical all-Si TFETs and bipolar operation with high symmetry. Quantum dot transport spectroscopy is used to assess the band structure and energy levels of the silicon island. △ Less

Submitted 19 May, 2014; v1 submitted 6 May, 2014; originally announced May 2014.

Comments: Copyright 2014 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 104, 193505 (2014) and may be found at http://scitation.aip.org/content/aip/journal/apl/104/19/10.1063/1.4876765. 4 pages, 3 figures

Journal ref: Appl. Phys. Lett. 104, 193505 (2014)

Long-range spin transfer in triple quantum dots

Authors: R. Sánchez, G. Granger, L. Gaudreau, A. Kam, M. Pioro-Ladrière, S. A. Studenikin, P. Zawadzki, A. S. Sachrajda, G. Platero

Abstract: Tunneling in a quantum coherent structure is not restricted to only nearest neighbours. Hop** between distant sites is possible via the virtual occupation of otherwise avoided intermediate states. Here we report the observation of long range transitions in the transport through three quantum dots coupled in series. A single electron is delocalized between the left and right quantum dots while th… ▽ More Tunneling in a quantum coherent structure is not restricted to only nearest neighbours. Hop** between distant sites is possible via the virtual occupation of otherwise avoided intermediate states. Here we report the observation of long range transitions in the transport through three quantum dots coupled in series. A single electron is delocalized between the left and right quantum dots while the centre one remains always empty. Superpositions are formed and both charge and spin are exchanged between the outermost dots. Detection of the process is achieved via the observation of narrow resonances, insensitive to the transport Pauli spin blockade. △ Less

Submitted 5 May, 2014; v1 submitted 18 December, 2013; originally announced December 2013.

Comments: 5 pages, 4 figures. Published version

Journal ref: Phys. Rev. Lett. 112, 176803 (2014)

Bipolar spin blockade and coherent state superpositions in a triple quantum dot

Authors: M. Busl, G. Granger, L. Gaudreau, R. Sánchez, A. Kam, M. Pioro-Ladrière, S. A. Studenikin, P. Zawadzki, Z. R. Wasilewski, A. S. Sachrajda, G. Platero

Abstract: Spin qubits based on interacting spins in double quantum dots have been successfully demonstrated. Readout of the qubit state involves a conversion of spin to charge information, universally achieved by taking advantage of a spin blockade phenomenon resulting from Pauli's exclusion principle. The archetypal spin blockade transport signature in double quantum dots takes the form of a rectified curr… ▽ More Spin qubits based on interacting spins in double quantum dots have been successfully demonstrated. Readout of the qubit state involves a conversion of spin to charge information, universally achieved by taking advantage of a spin blockade phenomenon resulting from Pauli's exclusion principle. The archetypal spin blockade transport signature in double quantum dots takes the form of a rectified current. Currently more complex spin qubit circuits including triple quantum dots are being developed. Here we show both experimentally and theoretically (a) that in a linear triple quantum dot circuit, the spin blockade becomes bipolar with current strongly suppressed in both bias directions and (b) that a new quantum coherent mechanism becomes relevant. Within this mechanism charge is transferred non-intuitively via coherent states from one end of the linear triple dot circuit to the other without involving the centre site. Our results have implications in future complex nano-spintronic circuits. △ Less

Submitted 19 October, 2013; originally announced October 2013.

Comments: 21 pages, 7 figures

Journal ref: Nature Nanotechnology 8, 261 (2013)

Inductively Coupled Plasma etching of amorphous silicon nanostructures over nanotopography using C4F8/SF6 chemistry

Authors: Patrick Harvey-Collard, Abdelatif Jaouad, Dominique Drouin, Michel Pioro-Ladrière

Abstract: Inductively Coupled Plasma (ICP) etching of amorphous silicon (a-Si) nanostructures using a continuous C4F8/SF6 plasma over nanotopography in silicon dioxide (SiO2) is investigated. The coil power of the ICP system is used to tune the a-Si etch rate from 20 to 125 nm/min. The etch rates of a-Si, SiO2 and electroresist are measured depending on the SF6 ratio, platen power and chamber pressure and u… ▽ More Inductively Coupled Plasma (ICP) etching of amorphous silicon (a-Si) nanostructures using a continuous C4F8/SF6 plasma over nanotopography in silicon dioxide (SiO2) is investigated. The coil power of the ICP system is used to tune the a-Si etch rate from 20 to 125 nm/min. The etch rates of a-Si, SiO2 and electroresist are measured depending on the SF6 ratio, platen power and chamber pressure and used to optimize the a-Si:SiO2 etch selectivity. The results on nanostructures show that the presence of an insulating etch-stop layer affects the passivation ratio required to achieve vertical sidewalls. A low pressure is also necessary in order to etch the silicon nanostructure embedded into the oxide nanotrenches to form a highly conformable a-Si nanowire. We argue that both of these behaviors could be explained by surface charging effects. Finally, etching of 20 nm a-Si nanowires that cross 15 nm trenches in oxide with vertical sidewalls and a 4.3:1 a-Si:SiO2 etch selectivity is demonstrated. This etching process can be used in applications where nanotopography is present such as single electron transistors or multigate transistors. △ Less

Submitted 2 May, 2013; originally announced May 2013.

Comments: 10 pages, supplementary material included

Journal ref: Microelectronic Engineering 110, 408 (2013)

Two-qubit Gate of Combined Single Spin Rotation and Inter-dot Spin Exchange in a Double Quantum Dot

Authors: R. Brunner, Y. -S. Shin, T. Obata, M. Pioro-Ladrière, T. Kubo, K. Yoshida, T. Taniyama, Y. Tokura, S. Tarucha

Abstract: A crucial requirement for quantum information processing is the realization of multiple-qubit quantum gates. Here, we demonstrate an electron spin based all-electrical two-qubit gate consisting of single spin rotations and inter-dot spin exchange in a double quantum dot. A partially entangled output state is obtained by the application of the two-qubit gate to an initial, uncorrelated state. We fi… ▽ More A crucial requirement for quantum information processing is the realization of multiple-qubit quantum gates. Here, we demonstrate an electron spin based all-electrical two-qubit gate consisting of single spin rotations and inter-dot spin exchange in a double quantum dot. A partially entangled output state is obtained by the application of the two-qubit gate to an initial, uncorrelated state. We find that the degree of entanglement is controllable by the exchange operation time. The approach represents a key step towards the realization of universal multiple qubit gates. △ Less

Submitted 15 September, 2011; originally announced September 2011.

Comments: accepted for publication, in press Phys.Rev.Lett. 2011

Coherent control of three-spin states in a triple quantum dot

Authors: L. Gaudreau, G. Granger, A. Kam, G. C. Aers, S. A. Studenikin, P. Zawadzki, M. Pioro-Ladrière, Z. R. Wasilewski, A. S. Sachrajda

Abstract: Spin qubits involving individual spins in single quantum dots or coupled spins in double quantum dots have emerged as potential building blocks for quantum information processing applications. It has been suggested that triple quantum dots may provide additional tools and functionalities. These include the encoding of information to either obtain protection from decoherence or to permit all-electr… ▽ More Spin qubits involving individual spins in single quantum dots or coupled spins in double quantum dots have emerged as potential building blocks for quantum information processing applications. It has been suggested that triple quantum dots may provide additional tools and functionalities. These include the encoding of information to either obtain protection from decoherence or to permit all-electrical operation, efficient spin busing across a quantum circuit, and to enable quantum error correction utilizing the three-spin Greenberger-Horn-Zeilinger quantum state. Towards these goals we demonstrate for the first time coherent manipulation between two interacting three-spin states. We employ the Landau-Zener-Stückelberg approach for creating and manipulating coherent superpositions of quantum states. We confirm that we are able to maintain coherence when decreasing the exchange coupling of one spin with another while simultaneously increasing its coupling with the third. Such control of pairwise exchange is a requirement of most spin qubit architectures but has not been previously demonstrated. △ Less

Submitted 22 February, 2013; v1 submitted 17 June, 2011; originally announced June 2011.

Comments: 12 pages, 13 figures, and 2 tables

Journal ref: Nature Physics 8, 54 (2012)

The 3D transport diagram of a triple quantum dot

Authors: G. Granger, L. Gaudreau, A. Kam, M. Pioro-Ladrière, S. A. Studenikin, Z. R. Wasilewski, P. Zawadzki, A. S. Sachrajda

Abstract: We measure a triple quantum dot in the regime where three addition lines, corresponding to the addition of an electron to each of three dots, pass through each other. In particular, we probe the interplay between transport and the tridimensional nature of the stability diagram. We choose the regime most pertinent for spin qubit applications. We find that at low bias transport through the triple qu… ▽ More We measure a triple quantum dot in the regime where three addition lines, corresponding to the addition of an electron to each of three dots, pass through each other. In particular, we probe the interplay between transport and the tridimensional nature of the stability diagram. We choose the regime most pertinent for spin qubit applications. We find that at low bias transport through the triple quantum dot circuit is only possible at six quadruple point locations. The results are consistent with an equivalent circuit model. △ Less

Submitted 16 July, 2010; v1 submitted 11 June, 2010; originally announced June 2010.

Comments: 4.3 pages, 5 figures, 1 table. This second version contains expanded exprimental details and analysis sections

Journal ref: Phys. Rev. B 82, 075304 (2010)

Coherent Manipulation of Individual Electron Spin in a Double Quantum Dot Integrated with a Micro-Magnet

Authors: Toshiaki Obata, Michel Pioro-Ladriere, Yasuhiro Tokura, Yun-Sok Shin, Toshihiro Kubo, Katsuharu Yoshida, Tomoyasu Taniyama, Seigo Tarucha

Abstract: We report the coherent manipulation of electron spins in a double quantum dot integrated with a micro-magnet. We performed electric dipole spin resonance experiments in the continuous wave (CW) and pump-and-probe modes. We observed two resonant CW peaks and two Rabi oscillations of the quantum dot current by swee** an external magnetic field at a fixed frequency. Two peaks and oscillations are… ▽ More We report the coherent manipulation of electron spins in a double quantum dot integrated with a micro-magnet. We performed electric dipole spin resonance experiments in the continuous wave (CW) and pump-and-probe modes. We observed two resonant CW peaks and two Rabi oscillations of the quantum dot current by swee** an external magnetic field at a fixed frequency. Two peaks and oscillations are measured at different resonant magnetic field, which reflects the fact that the local magnetic fields at each quantum dot are modulated by the stray field of a micro-magnet. As predicted with a density matrix approach, the CW current is quadratic with respect to microwave (MW) voltage while the Rabi frequency (ν_Rabi) is linear. The difference between the ν_Rabi values of two Rabi oscillations directly reflects the MW electric field across the two dots. These results show that the spins on each dot can be manipulated coherently at will by tuning the micro-magnet alignment and MW electric field. △ Less

Submitted 3 February, 2010; originally announced February 2010.

Comments: 5 pages, 3 figures

In situ reduction of charge noise in GaAs/AlGaAs Schottky-gated devices

Authors: Christo Buizert, Frank H. L. Koppens, Michel Pioro-Ladriere, Hans-Peter Tranitz, Ivo T. Vink, Seigo Tarucha, Werner Wegscheider, Lieven M. K. Vandersypen

Abstract: We show that an insulated electrostatic gate can be used to strongly suppress ubiquitous background charge noise in Schottky-gated GaAs/AlGaAs devices. Via a 2-D self-consistent simulation of the conduction band profile we show that this observation can be explained by reduced leakage of electrons from the Schottky gates into the semiconductor through the Schottky barrier, consistent with the ef… ▽ More We show that an insulated electrostatic gate can be used to strongly suppress ubiquitous background charge noise in Schottky-gated GaAs/AlGaAs devices. Via a 2-D self-consistent simulation of the conduction band profile we show that this observation can be explained by reduced leakage of electrons from the Schottky gates into the semiconductor through the Schottky barrier, consistent with the effect of "bias cooling". Upon noise reduction, the noise power spectrum generally changes from Lorentzian to $1/f$ type. By comparing wafers with different Al content, we exclude that DX centers play a dominant role in the charge noise. △ Less

Submitted 3 December, 2008; v1 submitted 4 August, 2008; originally announced August 2008.

Comments: 4 pages, 3 figures

Journal ref: Phys. Rev. Lett. 101, 226603 (2008)

Electrically driven single electron spin resonance in a slanting Zeeman field

Authors: M. Pioro-Ladriere, T. Obata, Y. Tokura, Y. -S. Shin, T. Kubo, K. Yoshida, T. Taniyama, S. Tarucha

Abstract: The rapidly rising fields of spintronics and quantum information science have led to a strong interest in develo** the ability to coherently manipulate electron spins. Electron spin resonance (ESR) is a powerful technique to manipulate spins that is commonly achieved by applying an oscillating magnetic field. However, the technique has proven very challenging when addressing individual spins.… ▽ More The rapidly rising fields of spintronics and quantum information science have led to a strong interest in develo** the ability to coherently manipulate electron spins. Electron spin resonance (ESR) is a powerful technique to manipulate spins that is commonly achieved by applying an oscillating magnetic field. However, the technique has proven very challenging when addressing individual spins. In contrast, by mixing the spin and charge degrees of freedom in a controlled way through engineered non-uniform magnetic fields, electron spin can be manipulated electrically without the need of high-frequency magnetic fields. Here we realize electrically-driven addressable spin rotations on two individual electrons by integrating a micron-size ferromagnet to a double quantum dot device. We find that the electrical control and spin selectivity is enabled by the micro-magnet's stray magnetic field which can be tailored to multi-dots architecture. Our results demonstrate the feasibility of manipulating electron spins electrically in a scalable way. △ Less

Submitted 7 May, 2008; originally announced May 2008.

Comments: 25 pages, 6 figures

Telegraph Noise in Coupled Quantum Dot Circuits Induced by a Quantum Point Contact

Authors: D. Taubert, M. Pioro-Ladrière, D. Schröer, D. Harbusch, A. S. Sachrajda, S. Ludwig

Abstract: Charge detection utilizing a highly biased quantum point contact has become the most effective probe for studying few electron quantum dot circuits. Measurements on double and triple quantum dot circuits is performed to clarify a back action role of charge sensing on the confined electrons. The quantum point contact triggers inelastic transitions, which occur quite generally. Under specific devi… ▽ More Charge detection utilizing a highly biased quantum point contact has become the most effective probe for studying few electron quantum dot circuits. Measurements on double and triple quantum dot circuits is performed to clarify a back action role of charge sensing on the confined electrons. The quantum point contact triggers inelastic transitions, which occur quite generally. Under specific device and measurement conditions these transitions manifest themselves as bounded regimes of telegraph noise within a stability diagram. A nonequilibrium transition from artificial atomic to molecular behavior is identified. Consequences for quantum information applications are discussed. △ Less

Submitted 4 May, 2008; v1 submitted 25 January, 2008; originally announced January 2008.

Comments: 4 pages, 3 figures (as published)

Journal ref: Phys. Rev. Lett. 100, 176805 (2008)

Microwave band on-chip coil technique for single electron spin resonance in a quantum dot

Authors: Toshiaki Obata, Michel Pioro-Ladriere, Toshihiro Kubo, Katsuharu Yoshida, Yasuhiro Tokura, Seigo Tarucha

Abstract: Microwave band on-chip microcoils are developed for the application to single electron spin resonance measurement with a single quantum dot. Basic properties such as characteristic impedance and electromagnetic field distribution are examined for various coil designs by means of experiment and simulation. The combined setup operates relevantly in the experiment at dilution temperature. The frequ… ▽ More Microwave band on-chip microcoils are developed for the application to single electron spin resonance measurement with a single quantum dot. Basic properties such as characteristic impedance and electromagnetic field distribution are examined for various coil designs by means of experiment and simulation. The combined setup operates relevantly in the experiment at dilution temperature. The frequency responses of the return loss and Coulomb blockade current are examined. Capacitive coupling between a coil and a quantum dot causes photon assisted tunneling, whose signal can greatly overlap the electron spin resonance signal. To suppress the photon assisted tunneling effect, a technique for compensating for the microwave electric field is developed. Good performance of this technique is confirmed from measurement of Coulomb blockade oscillations. △ Less

Submitted 24 October, 2007; v1 submitted 22 October, 2007; originally announced October 2007.

Comments: 7 pages, 8 figures, Accepted for publication in Rev. Sci. Instrum. The bibliography file is updated

Electron spin manipulation and resonator readout in a double quantum dot nano-electromechanical system

Authors: N. Lambert, I. Mahboob, M. Pioro-Ladrière, Y. Tokura, S. Tarucha, H. Yamaguchi

Abstract: Magnetically coupling a nano-mechanical resonator to a double quantum dot confining two electrons can enable the manipulation of a single electron spin and the readout of the resonator's natural frequency. When the Larmor frequency matches the resonator frequency, the electron spin in one of the dots can be selectively flipped by the magnetised resonator. By simultaneously measuring the charge s… ▽ More Magnetically coupling a nano-mechanical resonator to a double quantum dot confining two electrons can enable the manipulation of a single electron spin and the readout of the resonator's natural frequency. When the Larmor frequency matches the resonator frequency, the electron spin in one of the dots can be selectively flipped by the magnetised resonator. By simultaneously measuring the charge state of the two-electron double quantum dots, this transition can be detected thus enabling the natural frequency of the mechanical resonator to be determined. △ Less

Submitted 10 September, 2007; v1 submitted 5 September, 2007; originally announced September 2007.

Comments: 7 pages, fixed typos, updated figures 4 and 5

Journal ref: Phys. Rev. Lett. 100, 136802 (2008)

Micro-magnets for coherent control of spin-charge qubit in lateral quantum dots

Authors: M. Pioro-Ladriere, Y. Tokura, T. Obata, T. Kubo, S. Tarucha

Abstract: A lateral quantum dot design for coherent electrical manipulation of a two-level spin-charge system is presented. Two micron-size permanent magnets integrated to high-frequency electrodes produce a static slanting magnetic field suitable for voltage controlled single qubit gate operations. Stray field deviation from the slanting form is taken into account in the Hamiltonian describing the two-le… ▽ More A lateral quantum dot design for coherent electrical manipulation of a two-level spin-charge system is presented. Two micron-size permanent magnets integrated to high-frequency electrodes produce a static slanting magnetic field suitable for voltage controlled single qubit gate operations. Stray field deviation from the slanting form is taken into account in the Hamiltonian describing the two-level system, which involves hybridization of a single electron spin to the quantum dot's orbitals. Operation speed and gate fidelity are related to device parameters. Sub 100 ns $π$ pulse duration can be achieved with lattice fluctuations coherence time of 4 ms for GaAs. △ Less

Submitted 13 December, 2006; originally announced December 2006.

Comments: 4 pages, 2 figures. Accepted for publication in App. Phys. Lett

Quantum Hall droplets in coupled lateral quantum dots

Authors: Ramin M. Abolfath, Pawel Hawrylak, Michel Pioro-Ladriere, Andy Sachrajda

Abstract: We present a theory and Coulomb and Spin Blockade spectroscopy experiments on quantum Hall droplets with controlled electron numbers (N1,N2) in laterally coupled gated quantum dots. The theory is based on the configuration interaction method (CI) coupled with the unrestricted Hartree-Fock (URHF) basis. It allows us to calculate the magnetic field evolution of ground and excited states of coupled… ▽ More We present a theory and Coulomb and Spin Blockade spectroscopy experiments on quantum Hall droplets with controlled electron numbers (N1,N2) in laterally coupled gated quantum dots. The theory is based on the configuration interaction method (CI) coupled with the unrestricted Hartree-Fock (URHF) basis. It allows us to calculate the magnetic field evolution of ground and excited states of coupled quantum dots with large electron numbers. The method is applied to the spin transitions in the (5,5) droplet. Preliminary experimental results demonstrate the creation of the (5,5) droplet and its Spin Blockade spectra. △ Less

Submitted 27 March, 2006; originally announced March 2006.

Comments: 4 pages, 4 figures, to appear in Physica E (EP2DS-2005)

Charge Sensing of an Artificial H2+ Molecule

Authors: M. Pioro-Ladriere, M. R. Abolfath, P. Zawadzki, J. Lapointe, S. A. Studenikin, A. S. Sachrajda, P. Hawrylak

Abstract: We report charge detection studies of a lateral double quantum dot with controllable charge states and tunable tunnel coupling. Using an integrated electrometer, we characterize the equilibrium state of a single electron trapped in the doubled-dot (artificial H2+ molecule) by measuring the average occupation of one dot. We present a model where the electrostatic coupling between the molecule and… ▽ More We report charge detection studies of a lateral double quantum dot with controllable charge states and tunable tunnel coupling. Using an integrated electrometer, we characterize the equilibrium state of a single electron trapped in the doubled-dot (artificial H2+ molecule) by measuring the average occupation of one dot. We present a model where the electrostatic coupling between the molecule and the sensor is taken into account explicitly. From the measurements, we extract the temperature of the isolated electron and the tunnel coupling energy. It is found that this coupling can be tuned between 0 and 60 micro electron-volt in our device. △ Less

Submitted 28 July, 2005; v1 submitted 1 April, 2005; originally announced April 2005.

Comments: 5 pages, 4 figures. Revised version with added material. To be published in Physical Review B

Journal ref: Phys. Rev. B 72, 125307 (2005)

The origin of switching noise in GaAs/AlGaAs lateral gated devices

Authors: M. Pioro-Ladrière, J. H. Davies, A. R. Long, A. S. Sachrajda, L. Gaudreau, P. Zawadzki, J. Lapointe, J. Gupta, Z. Wasilewski, S. A. Studenikin

Abstract: We have studied the origin of switching (telegraph) noise at low temperature in lateral quantum structures defined electrostatically in GaAs/AlGaAs heterostructures by surface gates. The noise was measured by monitoring the conductance fluctuations around $e^2/h$ on the first step of a quantum point contact at around 1.2 K. Cooling with a positive bias on the gates dramatically reduces this nois… ▽ More We have studied the origin of switching (telegraph) noise at low temperature in lateral quantum structures defined electrostatically in GaAs/AlGaAs heterostructures by surface gates. The noise was measured by monitoring the conductance fluctuations around $e^2/h$ on the first step of a quantum point contact at around 1.2 K. Cooling with a positive bias on the gates dramatically reduces this noise, while an asymmetric bias exacerbates it. We propose a model in which the noise originates from a leakage current of electrons that tunnel through the Schottky barrier under the gate into the doped layer. The key to reducing noise is to keep this barrier opaque under experimental conditions. Bias cooling reduces the density of ionized donors, which builds in an effective negative gate voltage. A smaller negative bias is therefore needed to reach the desired operating point. This suppresses tunnelling from the gate and hence the noise. The reduction in the density of ionized donors also strengthens the barrier to tunneling at a given applied voltage. Support for the model comes from our direct observation of the leakage current into a closed quantum dot, around $10^{-20} \mathrm{A}$ for this device. The current was detected by a neighboring quantum point contact, which showed monotonic steps in time associated with the tunneling of single electrons into the dot. If asymmetric gate voltages are applied, our model suggests that the noise will increase as a consequence of the more negative gate voltage applied to one of the gates to maintain the same device conductance. We observe exactly this behaviour in our experiments. △ Less

Submitted 14 June, 2005; v1 submitted 24 March, 2005; originally announced March 2005.

Comments: 8 pages, 7 figures

Journal ref: Phys. Rev. B 72, 115331 (2005)

The influence of the long-lived quantum Hall potential on the characteristics of quantum devices

Authors: M. Pioro-Ladriere, A. Usher, A. S. Sachrajda, J. Lapointe, J. Gupta, Z. Wasilewski, S. Studinikin, M. Elliott

Abstract: Novel hysteretic effects are reported in magneto-transport experiments on lateral quantum devices. The effects are characterized by two vastly different relaxation times (minutes and days). It is shown that the observed phenomena are related to long-lived eddy currents. This is confirmed by torsion-balance magnetometry measurements of the same 2-dimensional electron gas (2DEG) material. These ob… ▽ More Novel hysteretic effects are reported in magneto-transport experiments on lateral quantum devices. The effects are characterized by two vastly different relaxation times (minutes and days). It is shown that the observed phenomena are related to long-lived eddy currents. This is confirmed by torsion-balance magnetometry measurements of the same 2-dimensional electron gas (2DEG) material. These observations show that the induced quantum Hall potential at the edges of the 2DEG reservoirs influences transport through the devices, and have important consequences for the magneto-transport of all lateral quantum devices. △ Less

Submitted 17 March, 2005; originally announced March 2005.

Comments: 5 pages, 4 figures

Coulomb and Spin blockade of two few-electrons quantum dots in series in the co-tunneling regime

Authors: M. Ciorga, M. Pioro-Ladrière, P. Zawadzki, J. Lapointe, Z. Wasilewski, A. S. Sachrajda

Abstract: We present Coulomb Blockade measurements of two few-electron quantum dots in series which are configured such that the electrochemical potential of one of the two dots is aligned with spin-selective leads. The charge transfer through the system requires co-tunneling through the second dot which is $not$ in resonance with the leads. The observed amplitude modulation of the resulting current is fo… ▽ More We present Coulomb Blockade measurements of two few-electron quantum dots in series which are configured such that the electrochemical potential of one of the two dots is aligned with spin-selective leads. The charge transfer through the system requires co-tunneling through the second dot which is $not$ in resonance with the leads. The observed amplitude modulation of the resulting current is found to reflect spin blockade events occurring through either of the two dots. We also confirm that charge redistribution events occurring in the off-resonance dot are detected indirectly via changes in the electrochemical potential of the aligned dot. △ Less

Submitted 2 July, 2004; originally announced July 2004.

Comments: 6 pages, 5 figures, submitted to Phys. Rev. B

Spin-blockade spectroscopy of a two-level artificial molecule

Authors: M. Pioro-Ladriere, M. Ciorga, J. Lapointe, P. Zawadzki, M. Korkusinski, P. Hawrylak, A. S. Sachrajda

Abstract: Coulomb and spin blockade spectroscopy investigations have been performed on an electrostatically defined ``artificial molecule'' connected to spin polarized leads. The molecule is first effectively reduced to a two-level system by placing both constituent atoms at a specific location of the level spectrum. The spin sensitivity of the conductance enables us to identify the electronic spin-states… ▽ More Coulomb and spin blockade spectroscopy investigations have been performed on an electrostatically defined ``artificial molecule'' connected to spin polarized leads. The molecule is first effectively reduced to a two-level system by placing both constituent atoms at a specific location of the level spectrum. The spin sensitivity of the conductance enables us to identify the electronic spin-states of the two-level molecule. We find in addition that the magnetic field induces variations in the tunnel coupling between the two atoms. The lateral nature of the device is evoked to explain this behavior. △ Less

Submitted 29 May, 2003; v1 submitted 20 January, 2003; originally announced January 2003.

Comments: 4 pages, 4 figures; revised version with a minor change in Fig.2 and additional inset in Fig.3.;accepted by PRL

Voltage-tunable singlet-triplet transition in lateral quantum dots

Authors: Jordan Kyriakidis, M. Pioro-Ladriere, M. Ciorga, A. S. Sachrajda, P. Hawrylak

Abstract: Results of calculations and high source-drain transport measurements are presented which demonstrate voltage-tunable entanglement of electron pairs in lateral quantum dots. At a fixed magnetic field, the application of a judiciously-chosen gate voltage alters the ground-state of an electron pair from an entagled spin singlet to a spin triplet. Results of calculations and high source-drain transport measurements are presented which demonstrate voltage-tunable entanglement of electron pairs in lateral quantum dots. At a fixed magnetic field, the application of a judiciously-chosen gate voltage alters the ground-state of an electron pair from an entagled spin singlet to a spin triplet. △ Less

Submitted 19 August, 2002; v1 submitted 28 November, 2001; originally announced November 2001.

Comments: 8.2 double-column pages, 10 eps figures

Journal ref: Phys. Rev. B 66, 035320 (2002)

Tunable Negative Differential Resistance controlled by Spin Blockade in Single Electron Transistors

Authors: M. Ciorga, M. Pioro-Ladriere, P. Zawadzki, P. Hawrylak, A. S. Sachrajda

Abstract: We demonstrate a tunable negative differential resistance controlled by spin blockade in single electron transistors. The single electron transistors containing a few electrons and spin polarized source and drain contacts were formed in GaAs/GaAlAs heterojunctions using metallic gates. Coulomb blockade measurements performed as a function of applied source-drain bias, electron number and magneti… ▽ More We demonstrate a tunable negative differential resistance controlled by spin blockade in single electron transistors. The single electron transistors containing a few electrons and spin polarized source and drain contacts were formed in GaAs/GaAlAs heterojunctions using metallic gates. Coulomb blockade measurements performed as a function of applied source-drain bias, electron number and magnetic field reveal well defined regimes where a decrease in the current is observed with increasing bias. We establish that the origin of the negative differential regime is the spin-polarized detection of electrons combined with a long spin relaxation time in the dot. These results indicate new functionalities that may be utilized in nano-spintronic devices in which the spin state is electro-statically controlled via the electron occupation number. △ Less

Submitted 18 October, 2001; originally announced October 2001.

Comments: 8 pages, 4 figures

The Collapse of the Spin-Singlet Phase in Quantum Dots

Authors: M. Ciorga, A. Wensauer, M. Pioro-Ladriere, M. Korkusinski, Jordan Kyriakidis, A. S. Sachrajda, P. Hawrylak

Abstract: We present experimental and theoretical results on a new regime in quantum dots in which the filling factor 2 singlet state is replaced by new spin polarized phases. We make use of spin blockade spectroscopy to identify the transition to this new regime as a function of the number of electrons. The key experimental observation is a reversal of the phase in the systematic oscillation of the ampli… ▽ More We present experimental and theoretical results on a new regime in quantum dots in which the filling factor 2 singlet state is replaced by new spin polarized phases. We make use of spin blockade spectroscopy to identify the transition to this new regime as a function of the number of electrons. The key experimental observation is a reversal of the phase in the systematic oscillation of the amplitude of Coulomb blockade peaks as the number of electrons is increased above a critical number. It is found theoretically that correlations are crucial to the existence of the new phases. △ Less

Submitted 28 March, 2002; v1 submitted 11 October, 2001; originally announced October 2001.

Comments: REVTeX4, 4 pages, 4 figures, to appear in PRL

Journal ref: Phys. Rev. Lett. 88, 256804 (2002)

The spectral weight of the Hubbard model through cluster perturbation theory

Authors: D. Senechal, D. Perez, M. Pioro-Ladriere

Abstract: We calculate the spectral weight of the one- and two-dimensional Hubbard models, by performing exact diagonalizations of finite clusters and treating inter-cluster hop** with perturbation theory. Even with relatively modest clusters (e.g. 12 sites), the spectra thus obtained give an accurate description of the exact results. Thus, spin-charge separation (i.e. an extended spectral weight bounde… ▽ More We calculate the spectral weight of the one- and two-dimensional Hubbard models, by performing exact diagonalizations of finite clusters and treating inter-cluster hop** with perturbation theory. Even with relatively modest clusters (e.g. 12 sites), the spectra thus obtained give an accurate description of the exact results. Thus, spin-charge separation (i.e. an extended spectral weight bounded by singularities) is clearly recognized in the one-dimensional Hubbard model, and so is extended spectral weight in the two-dimensional Hubbard model. △ Less

Submitted 3 August, 1999; originally announced August 1999.

Comments: 4 pages, 5 figures

Report number: CRPS-99-06

Journal ref: Phys. Rev. Lett. 84 (2000) 522.