Showing 51–57 of 57 results for author: Pierz, K

Tuning the onset voltage of resonant tunneling through InAs quantum dots by growth parameters

Authors: I. Hapke-Wurst, U. Zeitler, U. F. Keyser, K. Pierz, Z. Ma, R. J. Haug

Abstract: We investigated the size dependence of the ground state energy in self-assembled InAs quantum dots embedded in resonant tunneling diodes. Individual current steps observed in the current-voltage characteristics are attributed to resonant single-electron tunneling via the ground state of individual InAs quantum dots. The onset voltage of the first step observed is shown to decrease systematically… ▽ More We investigated the size dependence of the ground state energy in self-assembled InAs quantum dots embedded in resonant tunneling diodes. Individual current steps observed in the current-voltage characteristics are attributed to resonant single-electron tunneling via the ground state of individual InAs quantum dots. The onset voltage of the first step observed is shown to decrease systematically from 200 mV to 0 with increasing InAs coverage. We relate this to a coverage-dependent size of InAs dots grown on AlAs. The results are confirmed by atomic force micrographs and photoluminescence experiments on reference samples. △ Less

Submitted 17 October, 2002; originally announced October 2002.

Comments: 3 pages, 3 figures

Shot noise in self-assembled InAs quantum dots

Authors: A. Nauen, I. Hapke-Wurst, F. Hohls, U. Zeitler, R. J. Haug, K. Pierz

Abstract: We investigate the noise properties of a GaAs-AlAs-GaAs tunneling structure with embedded self-assembled InAs quantum dots in the single-electron tunneling regime. We analyze the dependence of the relative noise amplitude of the shot noise on bias voltage. We observe a non-monotonic behaviour of the Fano-factor $α$ with an average value of $α\approx 0.8$ consistent with the asymmetry of the tunn… ▽ More We investigate the noise properties of a GaAs-AlAs-GaAs tunneling structure with embedded self-assembled InAs quantum dots in the single-electron tunneling regime. We analyze the dependence of the relative noise amplitude of the shot noise on bias voltage. We observe a non-monotonic behaviour of the Fano-factor $α$ with an average value of $α\approx 0.8$ consistent with the asymmetry of the tunneling barriers. Reproducible fluctuations observed in $α$ can be attributed to the successive participation of more and more InAs quantum dots in the tunneling current. △ Less

Submitted 10 July, 2002; originally announced July 2002.

Coherent switching of semiconductor resonator solitons

Authors: V. B. Taranenko, F. -J. Ahlers, K. Pierz

Abstract: We demonstrate switching on and off of spatial solitons in a semiconductor microresonator by injection of light coherent with the background illumination. Evidence results that the formation of the solitons and their switching does not involve thermal processes. We demonstrate switching on and off of spatial solitons in a semiconductor microresonator by injection of light coherent with the background illumination. Evidence results that the formation of the solitons and their switching does not involve thermal processes. △ Less

Submitted 9 January, 2002; originally announced January 2002.

Comments: 3 pages, 5 figures

High frequency conductivity in the quantum Hall effect

Authors: F. Hohls, U. Zeitler, R. J. Haug, K. Pierz

Abstract: We present high frequency measurements of the diagonal conductivity sigma_xx of a two dimensional electron system in the integer quantum Hall regime. The width of the sigma_xx peaks between QHE minima is analyzed within the framework of scaling theory using both temperature T=100-700 mK and frequency f <= 6 GHz in a two parameter scaling ansatz. For the plateau transition width we find scaling b… ▽ More We present high frequency measurements of the diagonal conductivity sigma_xx of a two dimensional electron system in the integer quantum Hall regime. The width of the sigma_xx peaks between QHE minima is analyzed within the framework of scaling theory using both temperature T=100-700 mK and frequency f <= 6 GHz in a two parameter scaling ansatz. For the plateau transition width we find scaling behaviour for both its temperature dependence as well as its frequency dependence. However, the corresponding scaling exponent for temperature kappa=0.42 significantly differs from the one deduced for frequency scaling (c=0.6). Additionally we use the high frequency experiments to suppress the contact resistances that strongly influences DC measurements. We find an intrinsic critical conductivity sigma_c=0.17e^2/h, virtually independent of temperature and filling factor, and deviating significantly from the proposed universal value 0.5e^2/h. △ Less

Submitted 26 October, 2000; originally announced October 2000.

Comments: Proceedings of the '14th international conference on high magnetic fields in semiconductor physics' (Semimag-2000) in Matsue, Japan

Journal ref: Physica B 298, 88 (2001)

Resonant Tunnelling through InAs Quantum Dots in Tilted Magnetic Fields: Experimental Determination of the g-factor Anisotropy

Authors: J. M. Meyer, I. Hapke-Wurst, U. Zeitler, R. J. Haug, K. Pierz

Abstract: We have determined the Landé factor g* in self-organized InAs quantum dots using resonant-tunnelling experiments. With the magnetic field applied parallel to the growth direction z we find g*_\parallel = 0.75 for the specific dot investigated. When the magnetic field is tilted away by theta from the growth axis, g* gradually increases up to a value g*_\perp = 0.92 when B \perp z. Its angular dep… ▽ More We have determined the Landé factor g* in self-organized InAs quantum dots using resonant-tunnelling experiments. With the magnetic field applied parallel to the growth direction z we find g*_\parallel = 0.75 for the specific dot investigated. When the magnetic field is tilted away by theta from the growth axis, g* gradually increases up to a value g*_\perp = 0.92 when B \perp z. Its angular dependence is found to follow the phenomenological behaviour g* (theta) = \sqrt{(g*_\parallel cos(theta)^2 + (g*_\perp sin(theta)^2}. △ Less

Submitted 22 September, 2000; originally announced September 2000.

Comments: 4 pages, 3 figures, International Conference on Semiconductor Quantum Dots July 31 - August 3, 2000, Munich, Germany

Journal ref: physica status solidi (b) 224 (3), 685 (2001)

Enhanced quantized current driven by surface acoustic waves

Authors: J. Ebbecke, G. Bastian, M. Blöcker, K. Pierz, F. J. Ahlers

Abstract: We present the experimental realization of different approaches to increase the amount of quantized current which is driven by surface acoustic waves through split gate structures in a two dimensional electron gas. Samples with driving frequencies of up to 4.7 GHz have been fabricated without a deterioration of the precision of the current steps, and a parallelization of two channels with corres… ▽ More We present the experimental realization of different approaches to increase the amount of quantized current which is driven by surface acoustic waves through split gate structures in a two dimensional electron gas. Samples with driving frequencies of up to 4.7 GHz have been fabricated without a deterioration of the precision of the current steps, and a parallelization of two channels with correspondingly doubled current values have been achieved. We discuss theoretical and technological limitations of these approaches for metrological applications as well as for quantum logics. △ Less

Submitted 30 June, 2000; originally announced June 2000.

Comments: 3pages, 4eps-figures

Magnetic-field-induced singularities in spin dependent tunneling through InAs quantum dots

Authors: I. Hapke-Wurst, U. Zeitler, H. Frahm, A. G. M. Jansen, R. J. Haug, K. Pierz

Abstract: Current steps attributed to resonant tunneling through individual InAs quantum dots embedded in a GaAs-AlAs-GaAs tunneling device are investigated experimentally in magnetic fields up to 28 T. The steps evolve into strongly enhanced current peaks in high fields. This can be understood as a field-induced Fermi-edge singularity due to the Coulomb interaction between the tunneling electron on the q… ▽ More Current steps attributed to resonant tunneling through individual InAs quantum dots embedded in a GaAs-AlAs-GaAs tunneling device are investigated experimentally in magnetic fields up to 28 T. The steps evolve into strongly enhanced current peaks in high fields. This can be understood as a field-induced Fermi-edge singularity due to the Coulomb interaction between the tunneling electron on the quantum dot and the partly spin polarized Fermi sea in the Landau quantized three-dimensional emitter. △ Less

Submitted 4 May, 2000; v1 submitted 24 March, 2000; originally announced March 2000.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. B 62 (19), 12621 (2000)