Showing 1–50 of 57 results for author: Pierz, K

Observation of Floquet states in graphene

Authors: Marco Merboldt, Michael Schüler, David Schmitt, Jan Philipp Bange, Wiebke Bennecke, Karun Gadge, Klaus Pierz, Hans Werner Schumacher, Davood Momeni, Daniel Steil, Salvatore R. Manmana, Michael Sentef, Marcel Reutzel, Stefan Mathias

Abstract: Recent advances in the field of condensed-matter physics have unlocked the potential to realize and control emergent material phases that do not exist in thermal equilibrium. One of the most promising concepts in this regard is Floquet engineering, the coherent dressing of matter via time-periodic perturbations. However, the broad applicability of Floquet engineering to quantum materials is still… ▽ More Recent advances in the field of condensed-matter physics have unlocked the potential to realize and control emergent material phases that do not exist in thermal equilibrium. One of the most promising concepts in this regard is Floquet engineering, the coherent dressing of matter via time-periodic perturbations. However, the broad applicability of Floquet engineering to quantum materials is still unclear. For the paradigmatic case of monolayer graphene, the theoretically predicted Floquet-induced effects, despite a seminal report of the light-induced anomalous Hall effect, have been put into question. Here, we overcome this problem by using electronic structure measurements to provide direct experimental evidence of Floquet engineering in graphene. We report light-matter-dressed Dirac bands by measuring the contribution of Floquet sidebands, Volkov sidebands, and their quantum path interference to graphene's photoemission spectral function. Our results finally demonstrate that Floquet engineering in graphene is possible, paving the way for the experimental realization of the many theoretical proposals on Floquet-engineered band structures and topological phases. △ Less

Submitted 19 April, 2024; originally announced April 2024.

Comments: 4 main figures, 3 extended figures

Direct measurement of spin-flip rates in single-electron tunneling

Authors: Olfa Dani, Robert Hussein, Johannes C. Bayer, Klaus Pierz, Sigmund Kohler, Rolf J. Haug

Abstract: Spin-flips are one of the limiting factors for spin-based information processing. We demonstrate a transport approach for determining the spin-flip rates of a self-assembled InAs double quantum dot occupied by a single electron. In such devices, different Landé factors lead to an inhomogeneous Zeeman splitting, so that the two spin channels can never be at resonance simultaneously, leading to a sp… ▽ More Spin-flips are one of the limiting factors for spin-based information processing. We demonstrate a transport approach for determining the spin-flip rates of a self-assembled InAs double quantum dot occupied by a single electron. In such devices, different Landé factors lead to an inhomogeneous Zeeman splitting, so that the two spin channels can never be at resonance simultaneously, leading to a spin blockade at low temperatures. This blockade is analyzed in terms of spin flips for different temperatures and magnetic fields. Our results are in good agreement with a quantum master equation that combines the dot-lead couplings with ohmic dissipation stemming from spin-flip cotunneling. △ Less

Submitted 1 February, 2024; v1 submitted 17 October, 2023; originally announced October 2023.

Comments: 9 pages, 8 figures

Journal ref: Phys. Rev. B 109, L121404 (2024)

Universal scaling of adiabatic tunneling out of a shallow confinement potential

Authors: Austris Akmentinsh, David Reifert, Thomas Weimann, Klaus Pierz, Vyacheslavs Kashcheyevs, Niels Ubbelohde

Abstract: The ability to tune quantum tunneling is key for achieving selectivity in manipulation of individual particles in quantum technology applications. In this work we count electron escape events out of a time-dependent confinement potential, realized as a dynamic quantum dot in a GaAs/AlGaAs heterostructure. A universal scaling relation of the escape probability as a function of potential barrier ris… ▽ More The ability to tune quantum tunneling is key for achieving selectivity in manipulation of individual particles in quantum technology applications. In this work we count electron escape events out of a time-dependent confinement potential, realized as a dynamic quantum dot in a GaAs/AlGaAs heterostructure. A universal scaling relation of the escape probability as a function of potential barrier risetime and depth is established and developed as a method to probe tunneling rates over many orders of magnitude reaching limits of WKB approximation as the anharmonicity of shallow confinement becomes relevant. Crossover to thermally activated transport is used to estimate the single time-energy scale of the universal model. In application to metrological single electron sources, in-situ calibrated control signals greatly extend the accessible dynamical range for probing the quantization mechanism. Validation of the cubic potential approximation sets a foundation for microscopic modeling of quantum tunneling devices in the shallow confinement regime. △ Less

Submitted 26 January, 2023; originally announced January 2023.

Two electrons interacting at a mesoscopic beam splitter

Authors: Niels Ubbelohde, Lars Freise, Elina Pavlovska, Peter G. Silvestrov, Patrik Recher, Martins Kokainis, Girts Barinovs, Frank Hohls, Thomas Weimann, Klaus Pierz, Vyacheslavs Kashcheyevs

Abstract: The non-linear response of a beam splitter to the coincident arrival of interacting particles enables numerous applications in quantum engineering and metrology yet poses considerable challenge to achieve focused interactions on the individual particle level. Here we probe the coincidence correlations at a mesoscopic constriction between individual ballistic electrons in a system with unscreened C… ▽ More The non-linear response of a beam splitter to the coincident arrival of interacting particles enables numerous applications in quantum engineering and metrology yet poses considerable challenge to achieve focused interactions on the individual particle level. Here we probe the coincidence correlations at a mesoscopic constriction between individual ballistic electrons in a system with unscreened Coulomb interactions and introduce concepts to quantify the associated parametric non-linearity. The full counting statistics of joint detection allows us to explore the interaction-mediated energy exchange. We observe an increase from 50\% up to 70\% in coincidence counts between statistically indistinguishable on demand sources, and a correlation signature consistent with independent tomography of the electron emission. Analytical modeling and numerical simulations underpin consistency of the experimental results with Coulomb interactions between two electrons counterpropagating in a dispersive quadratic saddle, and demonstrate interactions sufficiently strong, $U/(\hbar ω) > 10$, to enable single-shot in-flight detection and quantum logic gates. △ Less

Submitted 7 October, 2022; originally announced October 2022.

Direct Access to Auger recombination in Graphene

Authors: Marius Keunecke, David Schmitt, Marcel Reutzel, Marius Weber, Christina Möller, G. S. Matthijs Jansen, Tridev A. Mishra, Alexander Osterkorn, Wiebke Bennecke, Klaus Pierz, Hans Werner Schumacher, Davood Momeni Pakdehi, Daniel Steil, Salvatore R. Manmana, Sabine Steil, Stefan Kehrein, Hans Christian Schneider, Stefan Mathias

Abstract: Auger scattering channels are of fundamental importance to describe and understand the non-equilibrium charge carrier dynamics in graphene. While impact excitation increases the number of carriers in the conduction band and has been observed experimentally, direct access to its inverse process, Auger recombination, has so far been elusive. Here, we tackle this problem by applying our novel setup f… ▽ More Auger scattering channels are of fundamental importance to describe and understand the non-equilibrium charge carrier dynamics in graphene. While impact excitation increases the number of carriers in the conduction band and has been observed experimentally, direct access to its inverse process, Auger recombination, has so far been elusive. Here, we tackle this problem by applying our novel setup for ultrafast time-resolved photoelectron momentum microscopy. Our approach gives simultaneous access to charge carrier dynamics at all energies and in-plane momenta within the linearly dispersive Dirac cones. We thus provide direct evidence for Auger recombination on a sub-10~fs timescale by identifying transient energy- and momentum-dependent populations far above the excitation energy. We compare our results with model calculations of scattering processes in the Dirac cone to support our experimental findings. △ Less

Submitted 26 November, 2020; originally announced December 2020.

Comments: 15 pages, paper and SI, 4+3 figures

Silicon carbide stacking-order-induced do** variation in epitaxial graphene

Authors: Davood Momeni Pakdehi, Philip Schädlich, T. T. Nhung Nguyen, Alexei A. Zakharov, Stefan Wundrack, Florian Speck, Klaus Pierz, Thomas Seyller, Christoph Tegenkamp, Hans. W. Schumacher

Abstract: Generally, it is supposed that the Fermi level in epitaxial graphene is controlled by two effects: p-type polarization do** induced by the bulk of the hexagonal SiC(0001) substrate and overcompensation by donor-like states related to the buffer layer. In this work, we evidence that this effect is also related to the specific underlying SiC terrace. We fabricated a periodic sequence of non-identi… ▽ More Generally, it is supposed that the Fermi level in epitaxial graphene is controlled by two effects: p-type polarization do** induced by the bulk of the hexagonal SiC(0001) substrate and overcompensation by donor-like states related to the buffer layer. In this work, we evidence that this effect is also related to the specific underlying SiC terrace. We fabricated a periodic sequence of non-identical SiC terraces, which are unambiguously attributed to specific SiC surface terminations. A clear correlation between the SiC termination and the electronic graphene properties is experimentally observed and confirmed by various complementary surface-sensitive methods. We attribute this correlation to a proximity effect of the SiC termination-dependent polarization do** on the overlying graphene layer. Our findings open a new approach for a nano-scale do**-engineering by self-patterning of epitaxial graphene and other 2D layers on dielectric polar substrates. △ Less

Submitted 30 May, 2020; originally announced June 2020.

Journal ref: Adv. Funct. Mater. 2020, 2004695

Traceably Calibrated Scanning Hall Probe Microscopy at Room Temperature

Authors: Manuela Gerken, Aurélie Solignac, Davood Momeni Pakdehi, Alessandra Manzin, Thomas Weimann, Klaus Pierz, Sibylle Sievers, Hans Werner Schumacher

Abstract: Fabrication, characterization and comparison of gold and graphene micro- and nano-size Hall sensors for room temperature scanning magnetic field microscopy applications is presented. The Hall sensors with active areas from 5 $μ$m down to 50 nm were fabricated by electron-beam lithography. The calibration of the Hall sensors in an external magnetic field revealed a sensitivity of 3.2 mV/(AT) $\pm$… ▽ More Fabrication, characterization and comparison of gold and graphene micro- and nano-size Hall sensors for room temperature scanning magnetic field microscopy applications is presented. The Hall sensors with active areas from 5 $μ$m down to 50 nm were fabricated by electron-beam lithography. The calibration of the Hall sensors in an external magnetic field revealed a sensitivity of 3.2 mV/(AT) $\pm$ 0.3 % for gold and 1615 V/(AT) $\pm$ 0.5 % for graphene at room temperature. The gold sensors were fabricated on silicon nitride cantilever chips suitable for integration into commercial scanning probe microscopes, allowing scanning Hall microscopy (SHM) under ambient conditions and controlled sensor-sample distance. The height dependent stray field distribution of a magnetic scale was characterized using a 5 $μ$m gold Hall sensor. The uncertainty of the entire Hall sensor based scanning and data acquisition process was analyzed allowing traceably calibrated SHM measurements. The measurement results show good agreement with numerical simulations within the uncertainty budget. △ Less

Submitted 2 June, 2020; v1 submitted 28 October, 2019; originally announced October 2019.

Comments: 13 pages, 6 figures

Journal ref: J. Sens. Sens. Syst., 9, 391-399, 2020

Substrate induced nanoscale resistance variation in epitaxial graphene

Authors: Anna Sinterhauf, Georg Alexander Traeger, Davood Momeni Pakdehi, Philip Schädlich, Philip Willke, Florian Speck, Thomas Seyller, Christoph Tegenkamp, Klaus Pierz, Hans Werner Schumacher, Martin Wenderoth

Abstract: Graphene, the first true two-dimensional material still reveals the most remarkable transport properties among the growing class of two-dimensional materials. Although many studies have investigated fundamental scattering processes, the surprisingly large variation in the experimentally determined resistances associated with a localized defect is still an open issue. Here, we quantitatively invest… ▽ More Graphene, the first true two-dimensional material still reveals the most remarkable transport properties among the growing class of two-dimensional materials. Although many studies have investigated fundamental scattering processes, the surprisingly large variation in the experimentally determined resistances associated with a localized defect is still an open issue. Here, we quantitatively investigate the local transport properties of graphene prepared by polymer assisted sublimation growth (PASG) using scanning tunneling potentiometry. PASG graphene is characterized by a spatially homogeneous current density, which allows to analyze variations in the local electrochemical potential with high precision. We utilize this possibility by examining the local sheet resistance finding a significant variation of up to 270% at low temperatures. We identify a correlation of the sheet resistance with the stacking sequence of the 6H-SiC substrate as well as with the distance between the graphene sheet and the substrate. Our results experimentally quantify the strong impact of the graphene-substrate interaction on the local transport properties of graphene. △ Less

Submitted 28 January, 2020; v1 submitted 8 August, 2019; originally announced August 2019.

Comments: 27 pages main text, 4 figures and 11 pages supplementary information, 17 figures. This is a pre-print of an article published in Nature Communications

Liquid metal intercalation of epitaxial graphene: large-area gallenene layer fabrication through gallium self-propagation at ambient conditions

Authors: S. Wundrack, D. Momeni Pakdehi, W. Dempwolf, N. Schmidt, K. Pierz, L. Michaliszyn, H. Spende, A. Schmidt, H. W. Schumacher, R. Stosch, A. Bakin

Abstract: We demonstrate the fabrication of an ultra thin gallium film, also known as gallenene, beneath epitaxial graphene on 6H-SiC under ambient conditions triggered by liquid gallium intercalation. Gallenene has been fabricated using the liquid metal intercalation, achieving lateral intercalation and diffusion of Ga atoms at room temperature on square centimeter areas limited only by the graphene sample… ▽ More We demonstrate the fabrication of an ultra thin gallium film, also known as gallenene, beneath epitaxial graphene on 6H-SiC under ambient conditions triggered by liquid gallium intercalation. Gallenene has been fabricated using the liquid metal intercalation, achieving lateral intercalation and diffusion of Ga atoms at room temperature on square centimeter areas limited only by the graphene samples' size. The stepwise self-propagation of the gallenene film below the epitaxial graphene surface on the macroscopic scale was observed by optical microscopy shortly after the initial processing without further physical or chemical treatment. Directional Ga diffusion of gallenene occurs on SiC terraces since the terrace steps form an energetic barrier (Ehrlich-Schwoebel barrier),retarding the gallenene propagation. The subsequent conversion of the epitaxial graphene into quasi free-standing bilayer graphene (QFBLG) and the graphene-gallenene heterostack interactions have been analyzed by XPS and Raman measurements. The results reveal a novel approach for controlled fabrication of wafer-scale gallenene as well as for two-dimensional heterostructures and stacks based on the interaction between liquid metal and epitaxial graphene. Please note, this work was also titled as Graphene meets gallenene -- A straightforward approach to develo** large-area heterostacks by gallium self-propagation https://www.researchgate.net/publication/333451130_Graphene_meets_gallenene_-_A_straightforward_approach_to_develo**_large-area_heterostacks_by_gallium_self-propagation △ Less

Submitted 16 July, 2020; v1 submitted 29 May, 2019; originally announced May 2019.

Comments: A copy of the video can be requested via the following email address: [email protected]

Journal ref: Phys. Rev. Materials 5, 024006 (2021)

Trap** and counting ballistic non-equilibrium electrons

Authors: L. Freise, T. Gerster, D. Reifert, T. Weimann, K. Pierz, F. Hohls, N. Ubbelohde

Abstract: We demonstrate the trap** of electrons propagating ballistically at far-above-equilibrium energies in GaAs/AlGaAs heterostructures in high magnetic field. We find low-loss transport along a gate-modified mesa edge in contrast to an effective decay of excess energy for the loop around a neighboring, mesa-confined node, enabling high-fidelity trap**. Measuring the full counting statistics via si… ▽ More We demonstrate the trap** of electrons propagating ballistically at far-above-equilibrium energies in GaAs/AlGaAs heterostructures in high magnetic field. We find low-loss transport along a gate-modified mesa edge in contrast to an effective decay of excess energy for the loop around a neighboring, mesa-confined node, enabling high-fidelity trap**. Measuring the full counting statistics via single-charge detection yields the trap** (and escape) probabilities of electrons scattered (and excited) within the node. Energetic and arrival-time distributions of captured electron wave packets are characterized by modulating tunnel barrier transmission. △ Less

Submitted 27 March, 2020; v1 submitted 28 February, 2019; originally announced February 2019.

Comments: 6 pages, 4 figures. Majorly revised, accepted manuscript

Journal ref: Phys. Rev. Lett. 124, 127701 (2020)

Homogeneous Large-area Quasi-freestanding Monolayer and Bilayer Graphene on SiC

Authors: Davood Momeni Pakdehi, Klaus Pierz, Stefan Wundrack, Johannes Aprojanz, Thi Thuy Nhung Nguyen, Thorsten Dziomba, Frank Hohls, Andrey Bakin, Rainer Stosch, Christoph Tegenkamp, Franz J. Ahlers, Hans W. Schumacher

Abstract: In this study, we first show that the argon flow during epitaxial graphene growth is an important parameter to control the quality of the buffer and the graphene layer. Atomic force microscopy (AFM) and low-energy electron diffraction (LEED) measurements reveal that the decomposition of the SiC substrate strongly depends on the Ar mass flow rate while pressure and temperature are kept constant. Ou… ▽ More In this study, we first show that the argon flow during epitaxial graphene growth is an important parameter to control the quality of the buffer and the graphene layer. Atomic force microscopy (AFM) and low-energy electron diffraction (LEED) measurements reveal that the decomposition of the SiC substrate strongly depends on the Ar mass flow rate while pressure and temperature are kept constant. Our data are interpreted by a model based on the competition of the SiC decomposition rate, controlled by the Ar flow, with a uniform graphene buffer layer formation under the equilibrium process at the SiC surface. The proper choice of a set of growth parameters allows the growth of defect-free, ultra-smooth and coherent graphene-free buffer layer and bilayer-free monolayer graphene sheets which can be transformed into large-area high-quality quasi-freestanding monolayer and bilayer graphene (QFMLG and QFBLG) by hydrogen intercalation. AFM, scanning tunneling microscopy (STM), Raman spectroscopy and electronic transport measurements underline the excellent homogeneity of the resulting quasi-freestanding layers. Electronic transport measurements in four-point probe configuration reveal a homogeneous low resistance anisotropy on both μm- and mm scales. △ Less

Submitted 12 November, 2018; originally announced November 2018.

Comments: Supplementary data is included

Journal ref: ACS Appl. Nano Mater. 2019, 2, 2, 844-852

Nonmonotonous classical magneto-conductivity of a two-dimensional electron gas in a disordered array of obstacles

Authors: N. H. Siboni, J. Schluck, K. Pierz, H. W. Schumacher, D. Kazazis, J. Horbach, T. Heinzel

Abstract: Magnetotransport measurements in combination with molecular dynamics (MD) simulations on two-dimensional disordered Lorentz gases in the classical regime are reported. In quantitative agreement between experiment and simulation, the magnetoconductivity displays a pronounced peak as a function of perpendicular magnetic field $B$ which cannot be explained in the framework of existing kinetic theorie… ▽ More Magnetotransport measurements in combination with molecular dynamics (MD) simulations on two-dimensional disordered Lorentz gases in the classical regime are reported. In quantitative agreement between experiment and simulation, the magnetoconductivity displays a pronounced peak as a function of perpendicular magnetic field $B$ which cannot be explained in the framework of existing kinetic theories. We show that this peak is linked to the onset of a directed motion of the electrons along the contour of the disordered obstacle matrix when the cyclotron radius becomes smaller than the size of the obstacles. This directed motion leads to transient superdiffusive motion and strong scaling corrections in the vicinity of the insulator-to-conductor transitions of the Lorentz gas. △ Less

Submitted 3 August, 2017; originally announced August 2017.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. Lett. 120, 056601 (2018)

Investigation of a possible electronic phase separation in the magnetic semiconductors Ga$_{1-x}$Mn$_{x}$As and Ga$_{1-x}$Mn$_{x}$P by means of fluctuation spectroscopy

Authors: Martin Lonsky, Jan Teschabai-Oglu, Klaus Pierz, Sibylle Sievers, Hans Werner Schumacher, Ye Yuan, Roman Böttger, Shengqiang Zhou, Jens Müller

Abstract: We present systematic temperature-dependent resistance noise measurements on a series of ferromagnetic Ga$_{1-x}$Mn$_{x}$As epitaxial thin films covering a large parameter space in terms of the Mn content $x$ and other variations regarding sample fabrication. We infer that the electronic noise is dominated by switching processes related to impurities in the entire temperature range. While metallic… ▽ More We present systematic temperature-dependent resistance noise measurements on a series of ferromagnetic Ga$_{1-x}$Mn$_{x}$As epitaxial thin films covering a large parameter space in terms of the Mn content $x$ and other variations regarding sample fabrication. We infer that the electronic noise is dominated by switching processes related to impurities in the entire temperature range. While metallic compounds with $x>2$ % do not exhibit any significant change in the low-frequency resistance noise around the Curie temperature $T_\mathrm{C}$, we find indications for an electronic phase separation in films with $x<2$ % in the vicinity of $T_\mathrm{C}$, manifesting itself in a maximum in the noise power spectral density. These results are compared with noise measurements on an insulating Ga$_{1-x}$Mn$_{x}$P reference sample, for which the evidence for an electronic phase separation is even stronger and a possible percolation of bound magnetic polarons is discussed. Another aspect addressed in this work is the effect of ion-irradiation induced disorder on the electronic properties of Ga$_{1-x}$Mn$_{x}$As films and, in particular, whether any electronic inhomogeneities can be observed in this case. Finally, we put our findings into the context of the ongoing debate on the electronic structure and the development of spontaneous magnetization in these materials. △ Less

Submitted 17 November, 2017; v1 submitted 8 May, 2017; originally announced May 2017.

Journal ref: Phys. Rev. B 97, 054413 (2018)

Tailoring the SiC surface - a morphology study on the epitaxial growth of graphene and its buffer layer

Authors: Mattias Kruskopf, Klaus Pierz, Davood Momeni Pakdehi, Stefan Wundrack, Rainer Stosch, Andrey Bakin, Hans W. Schumacher

Abstract: We investigate the growth of the graphene buffer layer and the involved step bunching behavior of the silicon carbide substrate surface using atomic force microscopy. The formation of local buffer layer domains are identified to be the origin of undesirably high step edges in excellent agreement with the predictions of a general model of step dynamics. The applied polymer-assisted sublimation grow… ▽ More We investigate the growth of the graphene buffer layer and the involved step bunching behavior of the silicon carbide substrate surface using atomic force microscopy. The formation of local buffer layer domains are identified to be the origin of undesirably high step edges in excellent agreement with the predictions of a general model of step dynamics. The applied polymer-assisted sublimation growth method demonstrates that the key principle to suppress this behavior is the uniform nucleation of the buffer layer. In this way, the silicon carbide surface is stabilized such that ultra-flat surfaces can be conserved during graphene growth on a large variety of silicon carbide substrate surfaces. The analysis of the experimental results describes different growth modes which extend the current understanding of epitaxial graphene growth by emphasizing the importance of buffer layer nucleation and critical mass transport processes. △ Less

Submitted 10 July, 2017; v1 submitted 26 April, 2017; originally announced April 2017.

Comments: 18 pages, 10 figures edited type setting and acknowledgments

Direct Comparison of Fractional and Integer Quantized Hall Resistance

Authors: Franz J. Ahlers, Martin Götz, Klaus Pierz

Abstract: We present precision measurements of the fractional quantized Hall effect where the quantized resistance $R^{[1/3]}$ in the fractional quantum Hall state at filling factor 1/3 was compared with a quantized resistance $R^{[2]}$, represented by an integer quantum Hall state at filling factor 2. A cryogenic current comparator bridge capable of currents down to the nanoampere range was used to directl… ▽ More We present precision measurements of the fractional quantized Hall effect where the quantized resistance $R^{[1/3]}$ in the fractional quantum Hall state at filling factor 1/3 was compared with a quantized resistance $R^{[2]}$, represented by an integer quantum Hall state at filling factor 2. A cryogenic current comparator bridge capable of currents down to the nanoampere range was used to directly compare two resistance values of two GaAs-based devices located in two cryostats. A value of $1 - (5.3 \pm 6.3) 10^{-8}$ (95% confidence level) was obtained for the ratio $(R^{[1/3]}/6R^{[2]})$. This constitutes the most precise comparison of integer resistance quantization (in terms of $h/e^2$) in single-particle systems and of fractional quantization in fractionally charged quasi-particle systems. While not relevant for practical metrology, such a test of the validity of the underlying physics is of significance in the context of the up-coming revision of the SI. △ Less

Submitted 6 June, 2017; v1 submitted 15 March, 2017; originally announced March 2017.

Nonequilibrium mesoscopic conductance fluctuations as the origin of 1/f noise in epitaxial graphene

Authors: Cay-Christian Kalmbach, Franz Josef Ahlers, Jürgen Schurr, André Müller, Juraj Feilhauer, Mattias Kruskopf, Klaus Pierz, Frank Hohls, Rolf J. Haug

Abstract: We investigate the 1/f noise properties of epitaxial graphene devices at low temperatures as a function of temperature, current and magnetic flux density. At low currents, an exponential decay of the 1/f noise power spectral density with increasing temperature is observed that indicates mesoscopic conductance fluctuations as the origin of 1/f noise at temperatures below 50 K. At higher currents, d… ▽ More We investigate the 1/f noise properties of epitaxial graphene devices at low temperatures as a function of temperature, current and magnetic flux density. At low currents, an exponential decay of the 1/f noise power spectral density with increasing temperature is observed that indicates mesoscopic conductance fluctuations as the origin of 1/f noise at temperatures below 50 K. At higher currents, deviations from the typical quadratic current dependence and the exponential temperature dependence occur as a result of nonequilibrium conditions due to current heating. By applying the theory of Kubakaddi [S. S. Kubakaddi, Phys. Rev. B 79, 075417 (2009)], a model describing the 1/f noise power spectral density of nonequilibrium mesoscopic conductance fluctuations in epitaxial graphene is developed and used to determine the energy loss rate per carrier. In the regime of Shubnikov-de Haas oscillations a strong increase of 1/f noise is observed, which we attribute to an additional conductance fluctuation mechanism due to localized states in quantizing magnetic fields. When the device enters the regime of quantized Hall resistance, the 1/f noise vanishes. It reappears if the current is increased and the quantum Hall breakdown sets in. △ Less

Submitted 16 September, 2016; originally announced September 2016.

Journal ref: Phys. Rev. B 94, 205430 (2016)

Comeback of epitaxial graphene for electronics: large-area growth of bilayer-free graphene on SiC

Authors: Mattias Kruskopf, Davood Momeni Pakdehi, Klaus Pierz, Stefan Wundrack, Rainer Stosch, Thorsten Dziomba, Martin Goetz, Jens Baringhaus, Johannes Aprojanz, Christoph Tegenkamp, Jakob Lidzba, Thomas Seyller, Frank Hohls, Franz J. Ahlers, Hans W. Schumacher

Abstract: We present a new fabrication method for epitaxial graphene on SiC which enables the growth of ultra-smooth defect- and bilayer-free graphene sheets with an unprecedented reproducibility, a necessary prerequisite for wafer-scale fabrication of high quality graphene-based electronic devices. The inherent but unfavorable formation of high SiC surface terrace steps during high temperature sublimation… ▽ More We present a new fabrication method for epitaxial graphene on SiC which enables the growth of ultra-smooth defect- and bilayer-free graphene sheets with an unprecedented reproducibility, a necessary prerequisite for wafer-scale fabrication of high quality graphene-based electronic devices. The inherent but unfavorable formation of high SiC surface terrace steps during high temperature sublimation growth is suppressed by rapid formation of the graphene buffer layer which stabilizes the SiC surface. The enhanced nucleation is enforced by decomposition of polymer adsorbates which act as a carbon source. With most of the steps well below 0.75 nm pure monolayer graphene without bilayer inclusions is formed with lateral dimensions only limited by the size of the substrate. This makes the polymer assisted sublimation growth technique the most promising method for commercial wafer scale epitaxial graphene fabrication. The extraordinary electronic quality is evidenced by quantum resistance metrology at 4.2 K with until now unreached precision and high electron mobilities on mm scale devices. △ Less

Submitted 6 June, 2016; originally announced June 2016.

Comments: 20 pages, 6 Figures

Ultrafast magneto-photocurrents as probe of anisotropy relaxation in GaAs

Authors: Christian B. Schmidt, Shekhar Priyadarshi, Klaus Pierz, Mark Bieler

Abstract: We induce ultrafast photocurrents in a GaAs crystal exposed to a magnetic field by optical femtosecond excitation. The magneto-photocurrents are studied by time-resolved detection of the simultaneously emitted THz radiation. We find that their dynamics differ considerably from the dynamics of other photocurrents which are expected to follow the temporal shape of the optical intensity. We attribute… ▽ More We induce ultrafast photocurrents in a GaAs crystal exposed to a magnetic field by optical femtosecond excitation. The magneto-photocurrents are studied by time-resolved detection of the simultaneously emitted THz radiation. We find that their dynamics differ considerably from the dynamics of other photocurrents which are expected to follow the temporal shape of the optical intensity. We attribute this difference to the influence of carrier-anisotropy relaxation on the magneto-photocurrents. Our measurements show that the anisotropy relaxation for carrier densities ranging between $10^{16}$ cm$^{-3}$ and $5 \times 10^{17}$ cm$^{-3}$ occurs on two different time scales. While the slow time constant is approximately 100 fs long and most likely governed by electron-phonon scattering, the fast time constant is on the order of 10 fs and presumably linked to the valence band. Our studies not only help to better understand the microscopic origins of optically induced currents but - being even more important - show that magneto-photocurrents can be employed as novel probe of anisotropy relaxation in GaAs. This technique is applicable to all non-centrosymmetric bulk semiconductors. △ Less

Submitted 12 January, 2016; originally announced January 2016.

Detection of the anomalous velocity with sub-picosecond time resolution in semiconductor nanostructures

Authors: Shekhar Priyadarshi, Klaus Pierz, Mark Bieler

Abstract: We report on the time-resolved detection of the anomalous velocity, constituting charge carriers moving perpendicular to an electric driving field, in undoped GaAs quantum wells. For this we optically excite the quantum wells with circularly polarized femtosecond laser pulses, thereby creating a state which breaks time-inversion symmetry. We then employ a quasi single cycle terahertz pulse as elec… ▽ More We report on the time-resolved detection of the anomalous velocity, constituting charge carriers moving perpendicular to an electric driving field, in undoped GaAs quantum wells. For this we optically excite the quantum wells with circularly polarized femtosecond laser pulses, thereby creating a state which breaks time-inversion symmetry. We then employ a quasi single cycle terahertz pulse as electric driving field to induce the anomalous velocity. The electromagnetic radiation emitted from the anomalous velocity is studied with a sub-picosecond time resolution and reveals intriguing results. We are able to distinguish between intrinsic (linked to the Berry curvature) and extrinsic (linked to scattering) contributions to the anomalous velocity both originating from the valence band and observe local energy space dependence of the anomalous velocity. Our results thus constitute a significant step towards non-invasive probing of the anomalous velocity locally in the full energy/momentum space and enable the investigation of many popular physical effects such as anomalous Hall effect and spin Hall effect on ultrafast time scales. △ Less

Submitted 8 October, 2015; originally announced October 2015.

Comments: The manuscript file also contains supplementary information

Journal ref: Phys. Rev. Lett. 115, 257401 (2015)

Validation of a quantized-current source with 0.2 ppm uncertainty

Authors: Friederike Stein, Dietmar Drung, Lukas Fricke, Hansjörg Scherer, Frank Hohls, Christoph Leicht, Martin Götz, Christian Krause, Ralf Behr, Eckart Pesel, Klaus Pierz, Uwe Siegner, Franz-Josef Ahlers, Hans W. Schumacher

Abstract: We report on high-accuracy measurements of quantized current, sourced by a tunable-barrier single-electron pump at frequencies $f$ up to $1$ GHz. The measurements were performed with a new picoammeter instrument, traceable to the Josephson and quantum Hall effects. Current quantization according to $I=ef$ with $e$ the elementary charge was confirmed at $f=545$ MHz with a total relative uncertainty… ▽ More We report on high-accuracy measurements of quantized current, sourced by a tunable-barrier single-electron pump at frequencies $f$ up to $1$ GHz. The measurements were performed with a new picoammeter instrument, traceable to the Josephson and quantum Hall effects. Current quantization according to $I=ef$ with $e$ the elementary charge was confirmed at $f=545$ MHz with a total relative uncertainty of 0.2 ppm, improving the state of the art by about a factor of 5. For the first time, the accuracy of a possible future quantum current standard based on single-electron transport was experimentally validated to be better than the best realization of the ampere within the present SI. △ Less

Submitted 19 June, 2015; originally announced June 2015.

Journal ref: Appl. Phys. Lett. 107, 103501 (2015)

Commensurability resonances in two-dimensional magneto-electric lateral superlattices

Authors: J. Schluck, S. Fasbender, T. Heinzel, K. Pierz, H. W. Schumacher, D. Kazazis, U. Gennser

Abstract: Hybrid lateral superlattices composed of a square array of antidots and a periodic one-dimensional magnetic modulation are prepared in $\mathrm{Ga[Al]As}$ heterostructures. The two-dimensional electron gases exposed to these superlattices are characterized by magnetotransport experiments in vanishing average perpendicular magnetic fields. Despite the absence of closed orbits, the diagonal magnetor… ▽ More Hybrid lateral superlattices composed of a square array of antidots and a periodic one-dimensional magnetic modulation are prepared in $\mathrm{Ga[Al]As}$ heterostructures. The two-dimensional electron gases exposed to these superlattices are characterized by magnetotransport experiments in vanishing average perpendicular magnetic fields. Despite the absence of closed orbits, the diagonal magnetoresistivity in the direction perpendicular to the magnetic modulation shows pronounced classical resonances. They are located at magnetic fields where snake trajectories exist which are quasi-commensurate with the antidot lattice. The diagonal magnetoresistivity in the direction of the magnetic modulation increases sharply above a threshold magnetic field and shows no fine structure. The experimental results are interpreted with the help of numerical simulations based on the semiclassical Kubo model. △ Less

Submitted 6 March, 2015; originally announced March 2015.

Comments: 8 pages, 5 figures

Epitaxial graphene on SiC: Modification of structural and electron transport properties by substrate pretreatment

Authors: Mattias Kruskopf, Klaus Pierz, Stefan Wundrack, Rainer Stosch, Thorsten Dziomba, Cay-Christian Kalmbach, André Müller, Jens Baringhaus, Christoph Tegenkamp, Franz J. Ahlers, Hans W. Schumacher

Abstract: The electrical transport properties of epitaxial graphene layers are correlated with the SiC surface morphology. In this study we show by atomic force microscopy and Raman measurements that the surface morphology and the structure of the epitaxial graphene layers change significantly when different pretreatment procedures are applied to nearly on-axis 6H-SiC(0001) substrates. It turns out that the… ▽ More The electrical transport properties of epitaxial graphene layers are correlated with the SiC surface morphology. In this study we show by atomic force microscopy and Raman measurements that the surface morphology and the structure of the epitaxial graphene layers change significantly when different pretreatment procedures are applied to nearly on-axis 6H-SiC(0001) substrates. It turns out that the often used hydrogen etching of the substrate is responsible for undesirable high macro steps evolving during graphene growth. A more advantageous type of sub-nanometer stepped graphene layers is obtained with a new method: a high-temperature conditioning of the SiC surface in argon atmosphere. The results can be explained by the observed graphene buffer layer domains after the conditioning process which suppress giant step bunching and graphene step flow growth. The superior electronic quality is demonstrated by a less extrinsic resistance anisotropy obtained in nano-probe transport experiments and by the excellent quantization of the Hall resistance in low-temperature magneto-transport measurements. The quantum Hall resistance agrees with the nominal value (half of the von Klitzing constant) within a standard deviation of 4.5*10(-9) which qualifies this method for the fabrication of electrical quantum standards. △ Less

Submitted 27 April, 2015; v1 submitted 13 February, 2015; originally announced February 2015.

Comments: This is an author-created, un-copyedited version of an article accepted for publication in J. Phys.: Condensed Matter. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it

Journal ref: J.Phys.: Condens. Matter 27 (2015) 185303

Fabrication and Study of Large Area QHE Devices Based on Epitaxial Graphene

Authors: S. Novikov, N. Lebedeva, K. Pierz, A. Satrapinski

Abstract: Quantum Hall effect (QHE) devices based on epitaxial graphene films grown on SiC were fabricated and studied for development of the QHE resistance standard. The graphene-metal contacting area in the Hall devices has been improved and fabricated using a double metalization process. The tested devices had an initial carrier concentration of (0.6 - 10)*10^11 1/cm^2 and showed half-integer quantum Hal… ▽ More Quantum Hall effect (QHE) devices based on epitaxial graphene films grown on SiC were fabricated and studied for development of the QHE resistance standard. The graphene-metal contacting area in the Hall devices has been improved and fabricated using a double metalization process. The tested devices had an initial carrier concentration of (0.6 - 10)*10^11 1/cm^2 and showed half-integer quantum Hall effect at a relatively low (3 T) magnetic field. Application of the photochemical gating method and annealing of the sample provides a convenient way for tuning the carrier density to the optimum value. Precision measurements of the quantum Hall resistance (QHR) in graphene and GaAs devices at moderate magnetic field strengths (<7 T) showed a relative agreement within 6*10^-9. △ Less

Submitted 8 December, 2014; originally announced December 2014.

Comments: 6 pages, 9 figures, 3 tables

Partitioning of on-demand electron pairs

Authors: Niels Ubbelohde, Frank Hohls, Vyacheslavs Kashcheyevs, Timo Wagner, Lukas Fricke, Bernd Kästner, Klaus Pierz, Hans W. Schumacher, Rolf J. Haug

Abstract: We demonstrate the high fidelity splitting of electron pairs emitted on demand from a dynamic quantum dot by an electronic beam splitter. The fidelity of pair splitting is inferred from the coincidence of arrival in two detector paths probed by a measurement of the partitioning noise. The emission characteristic of the on-demand electron source is tunable from electrons being partitioned equally a… ▽ More We demonstrate the high fidelity splitting of electron pairs emitted on demand from a dynamic quantum dot by an electronic beam splitter. The fidelity of pair splitting is inferred from the coincidence of arrival in two detector paths probed by a measurement of the partitioning noise. The emission characteristic of the on-demand electron source is tunable from electrons being partitioned equally and independently to electron pairs being split with a fidelity of 90%. For low beam splitter transmittance we further find evidence of pair bunching violating statistical expectations for independent fermions. △ Less

Submitted 31 March, 2014; originally announced April 2014.

Journal ref: Nature Nanotechnology 10, 46-49 (2015)

A self-referenced single-electron quantized-current source

Authors: Lukas Fricke, Michael Wulf, Bernd Kaestner, Frank Hohls, Philipp Mirovsky, Brigitte Mackrodt, Ralf Dolata, Thomas Weimann, Klaus Pierz, Uwe Siegner, Hans W. Schumacher

Abstract: With the anticipated redefinition of the international system of units (SI) the base units will be linked to fundamental constants of nature [1]. As for the electrical base unit "Ampere", it will be linked to the elementary charge e, requiring a corresponding quantum standard [2, 3]. Many concepts for such a standard have been investigated [4-14] relying on controlling the time-dependent tunnellin… ▽ More With the anticipated redefinition of the international system of units (SI) the base units will be linked to fundamental constants of nature [1]. As for the electrical base unit "Ampere", it will be linked to the elementary charge e, requiring a corresponding quantum standard [2, 3]. Many concepts for such a standard have been investigated [4-14] relying on controlling the time-dependent tunnelling of electrons. However, the stochastic nature of quantum mechanical tunnelling intrinsically evokes uncontrolled deviations from the nominally quantized current. Alternatively, the counting of electrons [15, 16] has been explored but is severely limited in current amplitude and uncertainty by the low detector bandwidth. The late M. Wulf proposed [17] that this fundamental problem of electrical quantum metrology could be overcome by combining serial single-electron pumps with charge detectors allowing the generation of a quantized current and the in-situ detection of its stochastic deviations. Here, we experimentally demonstrate such quantized-current generation with in-situ detection of tunnelling errors at low frequencies and a reduction of the total current uncertainty by more than one order of magnitude. After frequency scaling this should enable a validated primary standard for the redefined SI base unit Ampere. △ Less

Submitted 19 December, 2013; originally announced December 2013.

Journal ref: Phys. Rev. Lett. 112, 226803 (2014)

Broadband ferromagnetic resonance characterization of GaMnAs thin films

Authors: Aymen Ben Hamida, Sibylle Sievers, Klaus Pierz, Hans Werner Schumacher

Abstract: The precessional magnetization dynamics of GaMnAs thin films are characterized by broadband network analyzer ferromagnetic resonance (FMR) in a coplanar geometry at cryogenic temperatures. The FMR frequencies are characterized as function of in-plane field angle and field amplitude. Using an extended Kittel model of the FMR dispersion the magnetic film parameters such as saturation magnetization a… ▽ More The precessional magnetization dynamics of GaMnAs thin films are characterized by broadband network analyzer ferromagnetic resonance (FMR) in a coplanar geometry at cryogenic temperatures. The FMR frequencies are characterized as function of in-plane field angle and field amplitude. Using an extended Kittel model of the FMR dispersion the magnetic film parameters such as saturation magnetization and anisotropies are derived. The modification of the FMR behavior and of the magnetic parameters of the thin film upon annealing is analyzed. △ Less

Submitted 6 August, 2013; originally announced August 2013.

Comments: 4 pages, 4 figures, 1 table

Optical Spin Noise of a Single Hole Spin Localized in an (InGa)As Quantum Dot

Authors: Ramin Dahbashi, Jens Hübner, Fabian Berski, Klaus Pierz, Michael Oestreich

Abstract: We advance spin noise spectroscopy to the ultimate limit of single spin detection. This technique enables the measurement of the spin dynamic of a single heavy hole localized in a flat (InGa)As quantum dot. Magnetic field and light intensity dependent studies reveal even at low magnetic fields a strong magnetic field dependence of the longitudinal heavy hole spin relaxation time with an extremely… ▽ More We advance spin noise spectroscopy to the ultimate limit of single spin detection. This technique enables the measurement of the spin dynamic of a single heavy hole localized in a flat (InGa)As quantum dot. Magnetic field and light intensity dependent studies reveal even at low magnetic fields a strong magnetic field dependence of the longitudinal heavy hole spin relaxation time with an extremely long $T_1$ of $\ge$ 180 $μ$s at 31 mT and 5 K. The wavelength dependence of the spin noise power discloses for finite light intensities an inhomogeneous single quantum dot spin noise spectrum which is explained by charge fluctuations in the direct neighborhood of the quantum dot. The charge fluctuations are corroborated by the distinct intensity dependence of the effective spin relaxation rate. △ Less

Submitted 14 April, 2014; v1 submitted 13 June, 2013; originally announced June 2013.

Journal ref: Phys. Rev. Lett. 112, 156601 (2014)

Bilayer Graphene Quantum Dot Defined by Topgates

Authors: André Müller, Bernd Kaestner, Frank Hohls, Thomas Weimann, Klaus Pierz, Hans W. Schumacher

Abstract: We investigate the application of nanoscale topgates on exfoliated bilayer graphene to define quantum dot devices. At temperatures below 500 mK the conductance underneath the grounded gates is suppressed, which we attribute to nearest neighbour hop** and strain-induced piezoelectric fields. The gate-layout can thus be used to define resistive regions by tuning into the corresponding temperature… ▽ More We investigate the application of nanoscale topgates on exfoliated bilayer graphene to define quantum dot devices. At temperatures below 500 mK the conductance underneath the grounded gates is suppressed, which we attribute to nearest neighbour hop** and strain-induced piezoelectric fields. The gate-layout can thus be used to define resistive regions by tuning into the corresponding temperature range. We use this method to define a quantum dot structure in bilayer graphene showing Coulomb blockade oscillations consistent with the gate layout. △ Less

Submitted 19 March, 2014; v1 submitted 29 April, 2013; originally announced April 2013.

Journal ref: Journal of Applied Physics 115, 233710 (2014)

Towards quantized current arbitrary waveform synthesis

Authors: P. Mirovsky, L. Fricke, F. Hohls, B. Kaestner, Ch. Leicht, K. Pierz, J. Melcher, H. W. Schumacher

Abstract: The generation of ac modulated quantized current waveforms using a semiconductor non-adiabatic single electron pump is demonstrated. In standard operation the single electron pump generates a quantized output current of I = ef where e is the charge of the electron and f is the pum** frequency. Suitable frequency modulation of f allows the generation of ac modulated output currents with different… ▽ More The generation of ac modulated quantized current waveforms using a semiconductor non-adiabatic single electron pump is demonstrated. In standard operation the single electron pump generates a quantized output current of I = ef where e is the charge of the electron and f is the pum** frequency. Suitable frequency modulation of f allows the generation of ac modulated output currents with different characteristics. By sinusoidal and saw tooth like modulation of f accordingly modulated quantized current waveforms with kHz modulation frequencies and peak currents up to 100 pA are obtained. Such ac quantized current sources could find applications ranging from precision ac metrology to on-chip signal generation. △ Less

Submitted 22 March, 2013; originally announced March 2013.

Comments: 10 pages + 3 figures

Journal ref: J. Appl. Phys. 113, 213704 (2013)

All-optically induced currents resulting from frequency modulated coherent polarization

Authors: Shekhar Priyadarshi, Klaus Pierz, Mark Bieler

Abstract: We employ polarization-shaped ultrafast optical pulses to generate photocurrents which only arise if the optically induced coherent polarization is frequency modulated. This frequency modulation is obtained via detuned excitation of light-hole excitons in (110)-oriented GaAs quantum wells. The observed photocurrents vanish for resonant excitation of excitons and reverse their direction with a chan… ▽ More We employ polarization-shaped ultrafast optical pulses to generate photocurrents which only arise if the optically induced coherent polarization is frequency modulated. This frequency modulation is obtained via detuned excitation of light-hole excitons in (110)-oriented GaAs quantum wells. The observed photocurrents vanish for resonant excitation of excitons and reverse their direction with a change of the sign of detuning. Moreover, the currents do not exist for continuous-wave excitation. Our work reveals the existence of a new class of photocurrents and visualizes the complexity of current response tensors. This is helpful for the better understanding of optically induced microscopic transport in semiconductors. △ Less

Submitted 19 February, 2013; originally announced February 2013.

Journal ref: Appl. Phys. Lett. 102, 112102 (2013)

Counting statistics for electron capture in a dynamic quantum dot

Authors: Lukas Fricke, Michael Wulf, Bernd Kaestner, Vyacheslavs Kashcheyevs, Janis Timoshenko, Pavel Nazarov, Frank Hohls, Philipp Mirovsky, Brigitte Mackrodt, Ralf Dolata, Thomas Weimann, Klaus Pierz, Hans W. Schumacher

Abstract: We report non-invasive single-charge detection of the full probability distribution $P_n$ of the initialization of a quantum dot with $n$ electrons for rapid decoupling from an electron reservoir. We analyze the data in the context of a model for sequential tunneling pinch-off, which has generic solutions corresponding to two opposing mechanisms. One limit considers sequential "freeze out" of an a… ▽ More We report non-invasive single-charge detection of the full probability distribution $P_n$ of the initialization of a quantum dot with $n$ electrons for rapid decoupling from an electron reservoir. We analyze the data in the context of a model for sequential tunneling pinch-off, which has generic solutions corresponding to two opposing mechanisms. One limit considers sequential "freeze out" of an adiabatically evolving grand canonical distribution, the other one is an athermal limit equivalent to the solution of a generalized decay cascade model. We identify the athermal capturing mechanism in our sample, testifying to the high precision of our combined theoretical and experimental methods. The distinction between the capturing mechanisms allows to derive efficient experimental strategies for improving the initialization. △ Less

Submitted 8 November, 2012; originally announced November 2012.

Comments: 7 pages, 8 figures, including supplementary material in the appendix

Journal ref: Phys. Rev. Lett. 110, 126803 (2013)

Impact of current paths on measurement of tunneling magnetoresistance and spin torque critical current densities in GaMnAs-based magnetic tunnel junctions

Authors: Aymen Ben Hamida, Florian Bergmann, Klaus Pierz, Hans Werner Schumacher

Abstract: GaMnAs-based magnetic tunnel junction (MTJ) devices are characterized by in-plane and perpendicular-toplane magnetotransport at low temperatures. Perpendicular-to-plane transport reveals the typical tunneling magnetotransport (TMR) signal. Interestingly, a similar TMR signature is observed in the in-plane transport signal. Here, low-ohmic shunting of the MTJ by the top contact results in significa… ▽ More GaMnAs-based magnetic tunnel junction (MTJ) devices are characterized by in-plane and perpendicular-toplane magnetotransport at low temperatures. Perpendicular-to-plane transport reveals the typical tunneling magnetotransport (TMR) signal. Interestingly, a similar TMR signature is observed in the in-plane transport signal. Here, low-ohmic shunting of the MTJ by the top contact results in significant perpendicular-to-plane current paths. This effect allows the determination of TMR ratios of MTJs based on a simplified in-plane measurement. However, the same effect can lead to an inaccurate determination of resistance area products and spin torque critical current densities from perpendicular-to-plane magnetotransport experiments on MTJ pillar structures. △ Less

Submitted 24 September, 2012; originally announced September 2012.

Comments: 5 pages, 5 figures

All-optically induced ultrafast photocurrents: Beyond the instantaneous coherent response

Authors: Shekhar Priyadarshi, Klaus Pierz, Mark Bieler

Abstract: It is demonstrated that the non-instantaneous response of the optically induced coherent polarization tremendously influences the real-space shift of electronic charges in semiconductors. The possibility to coherently control this real-space shift with temporally non-overlap** excitation pulses allows for the observation of a new type of shift current, which only exists for certain polarization-… ▽ More It is demonstrated that the non-instantaneous response of the optically induced coherent polarization tremendously influences the real-space shift of electronic charges in semiconductors. The possibility to coherently control this real-space shift with temporally non-overlap** excitation pulses allows for the observation of a new type of shift current, which only exists for certain polarization-shaped excitation pulses and vanishes in the continuous-wave limit. In contrast to previously studied shift currents, the new current requires a phase mismatch between two orthogonal transition dipole moments and leads, within a nonlinear second-order description, to a tensor which is antisymmetric with respect to the order of the two exciting electric field amplitudes. These observations, which can even be made at room temperature and are expected to occur in a variety of semiconductor crystal classes, contribute to a better understanding of light-matter interaction involving degenerate bands. Thus, they are expected to prove important for future studies of coherent and nonlinear optical effects in semiconductors. △ Less

Submitted 7 September, 2012; originally announced September 2012.

Journal ref: Phys. Rev. Lett. 109, 216601 (2012)

Precision quantization of Hall resistance in transferred graphene

Authors: Mirosław Woszczyna, Miriam Friedemann, Martin Götz, Eckart Pesel, Klaus Pierz, Thomas Weimann, Franz J. Ahlers

Abstract: We show that quantum resistance standards made of transferred graphene reach the uncertainty of semiconductor devices, the current reference system in metrology. A large graphene device (150 \times 30 \mum2), exfoliated and transferred onto GaAs, revealed a quantization with a precision of (-5.1 \pm 6.3) \times 10-9 accompanied by a vanishing longitudinal resistance at current levels exceeding 10… ▽ More We show that quantum resistance standards made of transferred graphene reach the uncertainty of semiconductor devices, the current reference system in metrology. A large graphene device (150 \times 30 \mum2), exfoliated and transferred onto GaAs, revealed a quantization with a precision of (-5.1 \pm 6.3) \times 10-9 accompanied by a vanishing longitudinal resistance at current levels exceeding 10 \muA. While such performance had previously only been achieved with epitaxially grown graphene, our experiments demonstrate that transfer steps, inevitable for exfoliated graphene or graphene grown by chemical vapor deposition (CVD), are compatible with the requirements of high quality quantum resistance standards. △ Less

Submitted 23 April, 2012; v1 submitted 8 March, 2012; originally announced March 2012.

Journal ref: Applied Physics Letters 100, 164106 (2012)

Measurement of heavy-hole spin dephasing in (InGa)As quantum dots

Authors: R. Dahbashi, J. Hübner, F. Berski, J. Wiegand, X. Marie, K. Pierz, H. W. Schumacher, M. Oestreich

Abstract: We measure the spin dephasing of holes localized in self-assembled (InGa)As quantum dots by spin noise spectroscopy. The localized holes show a distinct hyperfine interaction with the nuclear spin bath despite the p-type symmetry of the valence band states. The experiments reveal a short spin relaxation time τ_{fast}^{hh} of 27 ns and a second, long spin relaxation time τ_{slow}^{hh} which exceeds… ▽ More We measure the spin dephasing of holes localized in self-assembled (InGa)As quantum dots by spin noise spectroscopy. The localized holes show a distinct hyperfine interaction with the nuclear spin bath despite the p-type symmetry of the valence band states. The experiments reveal a short spin relaxation time τ_{fast}^{hh} of 27 ns and a second, long spin relaxation time τ_{slow}^{hh} which exceeds the latter by more than one order of magnitude. The two times are attributed to heavy hole spins aligned perpendicular and parallel to the stochastic nuclear magnetic field. Intensity dependent measurements and numerical simulations reveal that the long relaxation time is still obscured by light absorption, despite low laser intensity and large detuning. Off-resonant light absorption causes a suppression of the spin noise signal due to the creation of a second hole entailing a vanishing hole spin polarization. △ Less

Submitted 2 January, 2012; v1 submitted 3 September, 2011; originally announced September 2011.

Comments: accepted to be published in APL

Journal ref: Appl. Phys. Lett. 100, 031906 (2012)

A quantized current source with mesoscopic feedback

Authors: Lukas Fricke, Frank Hohls, Niels Ubbelohde, Bernd Kaestner, Vyacheslavs Kashcheyevs, Christoph Leicht, Philipp Mirovsky, Klaus Pierz, Hans W. Schumacher, Rolf J. Haug

Abstract: We study a mesoscopic circuit of two quantized current sources, realized by non-adiabatic single- electron pumps connected in series with a small micron-sized island in between. We find that quantum transport through the second pump can be locked onto the quantized current of the first one by a feedback due to charging of the mesoscopic island. This is confirmed by a measurement of the charge vari… ▽ More We study a mesoscopic circuit of two quantized current sources, realized by non-adiabatic single- electron pumps connected in series with a small micron-sized island in between. We find that quantum transport through the second pump can be locked onto the quantized current of the first one by a feedback due to charging of the mesoscopic island. This is confirmed by a measurement of the charge variation on the island using a nearby charge detector. Finally, the charge feedback signal clearly evidences loading into excited states of the dynamic quantum dot during single-electron pump operation. △ Less

Submitted 27 May, 2011; originally announced May 2011.

Journal ref: Phys. Rev. B 83, 193306 (2011)

Magneto-Transport Properties of Exfoliated Graphene on GaAs

Authors: Mirosław Woszczyna, Miriam Friedemann, Klaus Pierz, Thomas Weimann, Franz J. Ahlers

Abstract: We studied the magneto-transport properties of graphene prepared by exfoliation on a III V semiconductor substrate. Tuneability of the carrier density of graphene was achieved by using a doped GaAs substrate as a back-gate. A GaAs/AlAs multilayer, designed to render the exfoliated graphene flakes visible, also provides the required back-gate insulation. Good tuneability of the graphene carrier den… ▽ More We studied the magneto-transport properties of graphene prepared by exfoliation on a III V semiconductor substrate. Tuneability of the carrier density of graphene was achieved by using a doped GaAs substrate as a back-gate. A GaAs/AlAs multilayer, designed to render the exfoliated graphene flakes visible, also provides the required back-gate insulation. Good tuneability of the graphene carrier density is obtained, and the typical Dirac resistance characteristic is observed despite the limited height of the multilayer barrier compared to the usual SiO2 oxide barrier on doped silicon. In a magnetic field weak localization effects as well as the quantum Hall effect of a graphene monolayer are studied. △ Less

Submitted 7 June, 2011; v1 submitted 17 March, 2011; originally announced March 2011.

Journal ref: Journal of Applied Physics, 110, 043712 (2011)

Integrated quantized electronics: a semiconductor quantized voltage source

Authors: Frank Hohls, Armin C. Welker, Christoph Leicht, Lukas Fricke, Bernd Kaestner, Philipp Mirovsky, André Müller, Klaus Pierz, Uwe Siegner, Hans Werner Schumacher

Abstract: The Josephson effect in superconductors links a quantized output voltage Vout = f \cdot(h/2e) to the natural constants of the electron's charge e, Planck's constant h, and to an excitation frequency f with important applications in electrical quantum metrology. Also semiconductors are routinely applied in electrical quantum metrology making use of the quantum Hall effect. However, despite their br… ▽ More The Josephson effect in superconductors links a quantized output voltage Vout = f \cdot(h/2e) to the natural constants of the electron's charge e, Planck's constant h, and to an excitation frequency f with important applications in electrical quantum metrology. Also semiconductors are routinely applied in electrical quantum metrology making use of the quantum Hall effect. However, despite their broad range of further applications e.g. in integrated circuits, quantized voltage generation by a semiconductor device has never been obtained. Here we report a semiconductor quantized voltage source generating quantized voltages Vout = f\cdot(h/e). It is based on an integrated quantized circuit of a single electron pump operated at pum** frequency f and a quantum Hall device monolithically integrated in series. The output voltages of several \muV are expected to be scalable by orders of magnitude using present technology. The device might open a new route towards the closure of the quantum metrological triangle. Furthermore it represents a universal electrical quantum reference allowing to generate quantized values of the three most relevant electrical units of voltage, current, and resistance based on fundamental constants using a single device. △ Less

Submitted 9 March, 2011; originally announced March 2011.

Comments: 15 pages, 3 figures

Journal ref: Phys. Rev. Lett. 109, 056802 (2012)

Synchronized single electron emission from dynamical quantum dots

Authors: P. Mirovsky, B. Kaestner, C. Leicht, A. C. Welker, T. Weimann, K. Pierz, H. W. Schumacher

Abstract: We study synchronized quantized charge pum** through several dynamical quantum dots (QDs) driven by a single time modulated gate signal. We show that the main obstacle for synchronization being the lack of uniformity can be overcome by operating the QDs in the decay cascade regime. We discuss the mechanism responsible for lifting the stringent uniformity requirements. This enhanced functionality… ▽ More We study synchronized quantized charge pum** through several dynamical quantum dots (QDs) driven by a single time modulated gate signal. We show that the main obstacle for synchronization being the lack of uniformity can be overcome by operating the QDs in the decay cascade regime. We discuss the mechanism responsible for lifting the stringent uniformity requirements. This enhanced functionality of dynamical QDs might find applications in nanoelectronics and quantum metrology. △ Less

Submitted 14 December, 2010; v1 submitted 11 November, 2010; originally announced November 2010.

Comments: 4 pages, 3 figures, submitted to APL

Journal ref: Appl. Phys. Lett. 97, 252104 (2010)

Generation of energy selective excitations in quantum Hall edge states

Authors: C. Leicht, P. Mirovsky, B. Kaestner, F. Hohls, V. Kashcheyevs, E. V. Kurganova, U. Zeitler, T. Weimann, K. Pierz, H. W. Schumacher

Abstract: We operate an on-demand source of single electrons in high perpendicular magnetic fields up to 30T, corresponding to a filling factor below 1/3. The device extracts and emits single charges at a tunable energy from and to a two-dimensional electron gas, brought into well defined integer and fractional quantum Hall (QH) states. It can therefore be used for sensitive electrical transport studies, e.… ▽ More We operate an on-demand source of single electrons in high perpendicular magnetic fields up to 30T, corresponding to a filling factor below 1/3. The device extracts and emits single charges at a tunable energy from and to a two-dimensional electron gas, brought into well defined integer and fractional quantum Hall (QH) states. It can therefore be used for sensitive electrical transport studies, e.g. of excitations and relaxation processes in QH edge states. △ Less

Submitted 29 September, 2010; originally announced September 2010.

Journal ref: Semicond. Sci. Technol. 26, 055010 (2011)

Constructive role of non-adiabaticity for quantized charge pum**

Authors: B. Kaestner, C. Leicht, P. Mirovsky, V. Kashcheyevs, E. V. Kurganova, U. Zeitler, K. Pierz, H. W. Schumacher

Abstract: We investigate a recently developed scheme for quantized charge pum** based on single-parameter modulation. The device was realized in an AlGaAl-GaAs gated nanowire. It has been shown theoretically that non-adiabaticity is fundamentally required to realize single-parameter pum**, while in previous multi-parameter pum** schemes it caused unwanted and less controllable currents. In this paper… ▽ More We investigate a recently developed scheme for quantized charge pum** based on single-parameter modulation. The device was realized in an AlGaAl-GaAs gated nanowire. It has been shown theoretically that non-adiabaticity is fundamentally required to realize single-parameter pum**, while in previous multi-parameter pum** schemes it caused unwanted and less controllable currents. In this paper we demonstrate experimentally the constructive and destructive role of non-adiabaticity by analysing the pum** current over a broad frequency range. △ Less

Submitted 13 July, 2010; originally announced July 2010.

Comments: Presented at ICPS 2010, July 25 - 30, Seoul, Korea

Journal ref: AIP Conf. Proc. 1399, 345 (2010)

Non-adiabatic pum** of single electrons affected by magnetic fields

Authors: Christoph Leicht, Bernd Kaestner, Vyacheslavs Kashcheyevs, Philipp Mirovsky, Thomas Weimann, Klaus Pierz, Hans-Werner Schumacher

Abstract: Non-adiabatic pum** of discrete charges, realized by a dynamical quantum dot in an AlGaAs/GaAs heterostructure, is studied under influence of a perpendicular magnetic field. Application of an oscillating voltage in the GHz-range to one of two top gates, crossing a narrow wire and confining a quantum dot, leads to quantized pumped current plateaus in the gate characteristics. The regime of pump… ▽ More Non-adiabatic pum** of discrete charges, realized by a dynamical quantum dot in an AlGaAs/GaAs heterostructure, is studied under influence of a perpendicular magnetic field. Application of an oscillating voltage in the GHz-range to one of two top gates, crossing a narrow wire and confining a quantum dot, leads to quantized pumped current plateaus in the gate characteristics. The regime of pum** one single electron is traced back to the diverse tunneling processes into and out-of the dot. Extending the theory to multiple electrons allows to investigate conveniently the pum** characteristics in an applied magnetic field. In this way, a qualitatively different behavior between pum** even or odd numbers of electrons is extracted. △ Less

Submitted 15 September, 2009; originally announced September 2009.

Comments: This article has been submitted to Physica E

Journal ref: Physica E 42, 911 (2010)

Graphene on Gallium Arsenide: Engineering the visibility

Authors: M. Friedemann, K. Pierz, R. Stosch, F. J. Ahlers

Abstract: Graphene consists of single or few layers of crystalline ordered carbon atoms. Its visibility on oxidized silicon (Si/SiO\_2) enabled its discovery and spawned numerous studies of its unique electronic properties. The combination of graphene with the equally unique electronic material gallium arsenide (GaAs) has up to now lacked such easy visibility. Here we demonstrate that a deliberately tailo… ▽ More Graphene consists of single or few layers of crystalline ordered carbon atoms. Its visibility on oxidized silicon (Si/SiO\_2) enabled its discovery and spawned numerous studies of its unique electronic properties. The combination of graphene with the equally unique electronic material gallium arsenide (GaAs) has up to now lacked such easy visibility. Here we demonstrate that a deliberately tailored GaAs/AlAs (aluminum arsenide) multi-layer structure makes graphene just as visible on GaAs as on Si/SiO\_2. We show that standard microscope images of exfoliated graphite on GaAs/AlAs suffice to identify mono-, bi-, and multi-layers of graphene. Raman data confirm our results. △ Less

Submitted 19 August, 2009; v1 submitted 23 July, 2009; originally announced July 2009.

Comments: 12 pages, 1 table, 3 figures

Journal ref: Applied Physics Letters 95, (2009) 102103

Single-parameter quantized charge pum** in high magnetic fields

Authors: B. Kaestner, Ch. Leicht, V. Kashcheyevs, K. Pierz, U. Siegner, H. W. Schumacher

Abstract: We study single-parameter quantized charge pum** via a semiconductor quantum dot in high magnetic fields. The quantum dot is defined between two top gates in an AlGaAs/GaAs heterostructure. Application of an oscillating voltage to one of the gates leads to pumped current plateaus in the gate characteristic, corresponding to controlled transfer of integer multiples of electrons per cycle. In a… ▽ More We study single-parameter quantized charge pum** via a semiconductor quantum dot in high magnetic fields. The quantum dot is defined between two top gates in an AlGaAs/GaAs heterostructure. Application of an oscillating voltage to one of the gates leads to pumped current plateaus in the gate characteristic, corresponding to controlled transfer of integer multiples of electrons per cycle. In a perpendicular-to-plane magnetic field the plateaus become more pronounced indicating an improved current quantization. Current quantization is sustained up to magnetic fields where full spin polarization of the device can be expected. △ Less

Submitted 7 November, 2008; originally announced November 2008.

Comments: This article has been submitted to Applied Physics Letters

Journal ref: Appl. Phys. Lett. 94, 012106 (2009)

Piezoelectric exciton-acoustic phonon coupling in single quantum dots

Authors: D. Sarkar, H. P. van der Meulen, J. M. Calleja, J. M. Meyer, R. J. Haug, K. Pierz

Abstract: Micro-photoluminescence spectroscopy at variable temperature, excitation intensity and energy was performed on a single InAs/AlAs self-assembled quantum dot. The exciton emission line (zero-phonon line, ZPL) exhibits a broad sideband due to exciton-acoustic phonon coupling by the deformation potential mechanism. Additionally, narrow low-energy sidebands at about 0.25 meV of the ZPL are attribute… ▽ More Micro-photoluminescence spectroscopy at variable temperature, excitation intensity and energy was performed on a single InAs/AlAs self-assembled quantum dot. The exciton emission line (zero-phonon line, ZPL) exhibits a broad sideband due to exciton-acoustic phonon coupling by the deformation potential mechanism. Additionally, narrow low-energy sidebands at about 0.25 meV of the ZPL are attributed to exciton-acoustic phonon piezoelectric coupling. In lowering the excitation energy or intensity these bands gradually dominate the emission spectrum of the quantum dot while the ZPL disappears. At high excitation intensity the sidebands due to piezoelectric coupling decrease strongly and the ZPL dominates the spectrum as a consequence of screening of the piezoelectric coupling by the photocreated free carriers. △ Less

Submitted 14 October, 2008; originally announced October 2008.

Comments: 4 pages, 4 figures

Robust single-parameter quantized charge pum**

Authors: B. Kaestner, V. Kashcheyevs, G. Hein, K. Pierz, U. Siegner, H. W. Schumacher

Abstract: This paper investigates a scheme for quantized charge pum** based on single-parameter modulation. The device was realized in an AlGaAs-GaAs gated nanowire. We find a remarkable robustness of the quantized regime against variations in the driving signal, which increases with applied rf power. This feature together with its simple configuration makes this device a potential module for a scalable… ▽ More This paper investigates a scheme for quantized charge pum** based on single-parameter modulation. The device was realized in an AlGaAs-GaAs gated nanowire. We find a remarkable robustness of the quantized regime against variations in the driving signal, which increases with applied rf power. This feature together with its simple configuration makes this device a potential module for a scalable source of quantized current. △ Less

Submitted 6 March, 2008; originally announced March 2008.

Comments: Submitted to Appl. Phys. Lett

Journal ref: Appl. Phys. Lett. 92, 192106 (2008)

Single-parameter non-adiabatic quantized charge pum**

Authors: B. Kaestner, V. Kashcheyevs, S. Amakawa, L. Li, M. D. Blumenthal, T. J. B. M. Janssen, G. Hein, K. Pierz, T. Weimann, U. Siegner, H. W. Schumacher

Abstract: Controlled charge pum** in an AlGaAs/GaAs gated nanowire by single-parameter modulation is studied experimentally and theoretically. Transfer of integral multiples of the elementary charge per modulation cycle is clearly demonstrated. A simple theoretical model shows that such a quantized current can be generated via loading and unloading of a dynamic quasi-bound state. It demonstrates that no… ▽ More Controlled charge pum** in an AlGaAs/GaAs gated nanowire by single-parameter modulation is studied experimentally and theoretically. Transfer of integral multiples of the elementary charge per modulation cycle is clearly demonstrated. A simple theoretical model shows that such a quantized current can be generated via loading and unloading of a dynamic quasi-bound state. It demonstrates that non-adiabatic blockade of unwanted tunnel events can obliterate the requirement of having at least two phase-shifted periodic signals to realize quantized pum**. The simple configuration without multiple pum** signals might find wide application in metrological experiments and quantum electronics. △ Less

Submitted 6 July, 2007; originally announced July 2007.

Comments: 4 pages, 4 figures

Journal ref: Physical Review B 77, 153301 (2008)

Noise at a Fermi-edge singularity

Authors: N. Maire, F. Hohls, T. Luedtke, K. Pierz, R. J. Haug

Abstract: We present noise measurements of self-assembled InAs quantum dots at high magnetic fields. In comparison to I-V characteristics at zero magnetic field we notice a strong current overshoot which is due to a Fermi-edge singularity. We observe an enhanced suppression in the shot noise power simultaneous to the current overshoot which is attributed to the electron-electron interaction in the Fermi-e… ▽ More We present noise measurements of self-assembled InAs quantum dots at high magnetic fields. In comparison to I-V characteristics at zero magnetic field we notice a strong current overshoot which is due to a Fermi-edge singularity. We observe an enhanced suppression in the shot noise power simultaneous to the current overshoot which is attributed to the electron-electron interaction in the Fermi-edge singularity. △ Less

Submitted 28 September, 2006; originally announced September 2006.

Journal ref: Physical Review B 75, 233304 (2007)

Enhanced Shot Noise in Tunneling through a Stack of Coupled Quantum Dots

Authors: P. Barthold, F. Hohls, N. Maire, K. Pierz, R. J. Haug

Abstract: We have investigated the noise properties of the tunneling current through vertically coupled self-assembled InAs quantum dots. We observe super-Poissonian shot noise at low temperatures. For increased temperature this effect is suppressed. The super-Poissonian noise is explained by capacitive coupling between different stacks of quantum dots. We have investigated the noise properties of the tunneling current through vertically coupled self-assembled InAs quantum dots. We observe super-Poissonian shot noise at low temperatures. For increased temperature this effect is suppressed. The super-Poissonian noise is explained by capacitive coupling between different stacks of quantum dots. △ Less

Submitted 20 March, 2006; originally announced March 2006.

Journal ref: Phys. Rev. Lett. 96, 246804 (2006)

Shot noise in tunneling through a single quantum dot

Authors: A. Nauen, F. Hohls, N. Maire, K. Pierz, R. J. Haug

Abstract: We investigate the noise properties of a zero-dimensional InAs quantum dot (QD) embedded in a GaAs-AlAs-GaAs tunneling structure. We observe an approximately linear dependence of the Fano factor and the current as function of bias voltage. Both effects can be linked to the scanning of the 3-dimensional emitter density of states by the QD. At the current step the shape of the Fano factor is mainl… ▽ More We investigate the noise properties of a zero-dimensional InAs quantum dot (QD) embedded in a GaAs-AlAs-GaAs tunneling structure. We observe an approximately linear dependence of the Fano factor and the current as function of bias voltage. Both effects can be linked to the scanning of the 3-dimensional emitter density of states by the QD. At the current step the shape of the Fano factor is mainly determined by the Fermi function of the emitter electrons. The observed voltage and temperature dependence is compared to the results of a master equation approach. △ Less

Submitted 3 March, 2004; originally announced March 2004.

Journal ref: Phys. Rev. B 70, 033305 (2004)