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Detailed spectroscopy of doubly magic $^{132}$Sn
Authors:
J. Benito,
L. M. Fraile,
A. Korgul,
M. Piersa,
E. Adamska,
A. N. Andreyev,
R. Álvarez-Rodríguez,
A. E. Barzakh,
G. Benzoni,
T. Berry,
M. J. G. Borge,
M. Carmona,
K. Chrysalidis,
C. Costache,
J. G. Cubiss,
T. Day Goodacre,
H. De Witte,
D. V. Fedorov,
V. N. Fedosseev,
G. Fernández-Martínez,
A. Fijałkowska,
M. Fila,
H. Fynbo,
D. Galaviz,
P. Galve
, et al. (63 additional authors not shown)
Abstract:
The structure of the doubly magic $^{132}_{50}$Sn$_{82}$ has been investigated at the ISOLDE facility at CERN, populated both by the $β^-$decay of $^{132}$In and $β^-$-delayed neutron emission of $^{133}$In. The level scheme of $^{132}$Sn is greatly expanded with the addition of 68 $γ$-transitions and 17 levels observed for the first time in the $β$ decay. The information on the excited structure…
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The structure of the doubly magic $^{132}_{50}$Sn$_{82}$ has been investigated at the ISOLDE facility at CERN, populated both by the $β^-$decay of $^{132}$In and $β^-$-delayed neutron emission of $^{133}$In. The level scheme of $^{132}$Sn is greatly expanded with the addition of 68 $γ$-transitions and 17 levels observed for the first time in the $β$ decay. The information on the excited structure is completed by new $γ$-transitions and states populated in the $β$-n decay of $^{133}$In. Improved delayed neutron emission probabilities are obtained both for $^{132}$In and $^{133}$In. Level lifetimes are measured via the Advanced Time-Delayed $βγγ$(t) fast-timing method. An interpretation of the level structure is given based on the experimental findings and the particle-hole configurations arising from core excitations both from the \textit{N} = 82 and \textit{Z} = 50 shells, leading to positive and negative parity particle-hole multiplets. The experimental information provides new data to challenge the theoretical description of $^{132}$Sn.
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Submitted 6 July, 2020;
originally announced July 2020.
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Electron Paramagnetic Resonance of Mn in Bi$_2$Se$_3$ Topological Insulator
Authors:
Agnieszka Wolos,
Aneta Drabinska,
Maria Kaminska,
Andrzej Hruban,
Stanislawa G. Strzelecka,
Andrzej Materna,
Miroslaw Piersa,
Magdalena Romaniec,
Ryszard Diduszko
Abstract:
Electron paramagnetic resonance was used to investigate Mn impurity in Bi$_2$Se$_3$ topological insulator grown by the vertical Bridgman method. Mn in high-spin S = 5/2, Mn$^2$$^+$ configuration, was detected regardless of the conductivity type of the host material. This means that Mn$^2$$^+$(d$^5$) energy level is located within the valence band, and Mn$^1$$^+$(d$^6$) energy level is outside the…
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Electron paramagnetic resonance was used to investigate Mn impurity in Bi$_2$Se$_3$ topological insulator grown by the vertical Bridgman method. Mn in high-spin S = 5/2, Mn$^2$$^+$ configuration, was detected regardless of the conductivity type of the host material. This means that Mn$^2$$^+$(d$^5$) energy level is located within the valence band, and Mn$^1$$^+$(d$^6$) energy level is outside the energy gap of Bi$_2$Se$_3$. The electron paramagnetic resonance spectrum of Mn$^2$$^+$ in Bi$_2$Se$_3$ is characterized by the isotropic g-factor |g| = 1.91 and large axial parameter D = -4.20 GHz x h. This corresponds to the zero-field splitting of the Kramers doublets equal to 8.4 GHz x h and 16.8 GHz x h, respectively, which is comparable to the Zeeman splitting for the X-band. Mn in Bi$_2$Se$_3$ acts as an acceptor, effectively reducing native-high electron concentration, compensating selenium vacancies, and resulting in p-type conductivity.
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Submitted 5 December, 2014;
originally announced December 2014.
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Landau level spectroscopy of relativistic fermions with low Fermi velocity in Bi2Te3 three-dimensional topological insulator
Authors:
A. Wolos,
S. Szyszko,
A. Drabinska,
M. Kaminska,
S. G. Strzelecka,
A. Hruban,
A. Materna,
M. Piersa
Abstract:
X-band microwave spectroscopy is applied to study the cyclotron resonance in Bi2Te3 exposed to ambient conditions. With its help, intraband transitions between Landau levels of relativistic fermions are observed. The Fermi velocity equals to 3260 m/s, which is much lower than has been reported in the literature for samples cleaved in vacuum. Simultaneous observation of bulk Shubnikov - de Haas osc…
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X-band microwave spectroscopy is applied to study the cyclotron resonance in Bi2Te3 exposed to ambient conditions. With its help, intraband transitions between Landau levels of relativistic fermions are observed. The Fermi velocity equals to 3260 m/s, which is much lower than has been reported in the literature for samples cleaved in vacuum. Simultaneous observation of bulk Shubnikov - de Haas oscillations by contactless microwave spectroscopy allows determination of the Fermi level position. Occupation of topological surface states depends not only on bulk Fermi level but also on the surface band bending.
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Submitted 13 November, 2012;
originally announced November 2012.
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Properties of metal-insulator transition and electron spin relaxation in GaN:Si
Authors:
A. Wolos,
Z. Wilamowski,
M. Piersa,
W. Strupinski,
B. Lucznik,
I. Grzegory,
S. Porowski
Abstract:
We investigate properties of do**-induced metal-insulator transition in GaN:Si by means of electron spin resonance and Hall effect. While increasing the do** concentration, Si-related bands are formed below the bottom of the GaN conduction band. The D0 band of single-occupied Si donor sites is centered 27 meV below the bottom of the GaN conduction band, the D- band of double-occupied Si states…
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We investigate properties of do**-induced metal-insulator transition in GaN:Si by means of electron spin resonance and Hall effect. While increasing the do** concentration, Si-related bands are formed below the bottom of the GaN conduction band. The D0 band of single-occupied Si donor sites is centered 27 meV below the bottom of the GaN conduction band, the D- band of double-occupied Si states at 2.7 meV below the bottom of the GaN conduction band. Strong dam** of the magnetic moment occurs due to filling of the D- states at Si concentrations approaching the metal-insulator transition. Simultaneously, shortening of electron spin relaxation time due to limited electron lifetime in the single-occupied D0 band is observed. The metal-insulator transition occurs at the critical concentration of uncompensated donors equal to about 1.6 * 10^18 cm^-3. Electronic states in metallic samples beyond the metal-insulator transition demonstrate non-magnetic character of double-occupied states.
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Submitted 22 December, 2010;
originally announced December 2010.
