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Quantum transport signature of strain-induced scalar and pseudo-vector potentials in a crenellated hBN-graphene heterostructure
Authors:
Romaine Kerjouan,
Michael Rosticher,
Aurélie Pierret,
Kenji Watanabe,
Takashi Taniguchi,
Sukhdeep Dhillon,
Robson Ferreira,
Daniel Dolfi,
Mark Goerbig,
Bernard Plaçais,
Juliette Mangeney
Abstract:
The sharp Dirac cone of the electronic dispersion confers to graphene a remarkable sensitivity to strain. It is usually encoded in scalar and pseudo-vector potentials, induced by the modification of hop** parameters, which have given rise to new phenomena at the nanoscale such as giant pseudomagnetic fields and valley polarization. Here, we unveil the effect of these potentials on the quantum tr…
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The sharp Dirac cone of the electronic dispersion confers to graphene a remarkable sensitivity to strain. It is usually encoded in scalar and pseudo-vector potentials, induced by the modification of hop** parameters, which have given rise to new phenomena at the nanoscale such as giant pseudomagnetic fields and valley polarization. Here, we unveil the effect of these potentials on the quantum transport across a succession of strain-induced barriers. We use high-mobility, hBN-encapsulated graphene, transferred over a large (10x10 $μ$m$^{2}$) crenellated hBN substrate. We show the emergence of a broad resistance ancillary peak at positive energy that arises from Klein tunneling barriers induced by the tensile strain at the trench edges. Our theoretical study, in quantitative agreement with experiment, highlights the balanced contributions of strain-induced scalar and pseudo-vector potentials on ballistic transport. Our results establish crenellated van der Waals heterostructures as a promising platform for strain engineering in view of applications and basic physics.
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Submitted 28 February, 2024;
originally announced February 2024.
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Electroluminescence and Energy Transfer Mediated by Hyperbolic Polaritons
Authors:
L. Abou-Hamdan,
A. Schmitt,
R. Bretel,
S. Rossetti,
M. Tharrault,
D. Mele,
A. Pierret,
M. Rosticher,
T. Taniguchi,
K. Watanabe,
C. Maestre,
C. Journet,
B. Toury,
V. Garnier,
P. Steyer,
J. H. Edgar,
E. Janzen,
J-M. Berroir,
G. Fève,
G. Ménard,
B. Plaçais,
C. Voisin,
J-P. Hugonin,
E. Bailly,
B. Vest
, et al. (4 additional authors not shown)
Abstract:
Under high electrical current, some materials can emit electromagnetic radiation beyond incandescence. This phenomenon, referred to as electroluminescence, leads to the efficient emission of visible photons and is the basis of domestic lighting devices (e.g., light-emitting diodes). In principle, electroluminescence can lead to mid-infrared (mid-IR) emission of confined light-matter excitations ca…
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Under high electrical current, some materials can emit electromagnetic radiation beyond incandescence. This phenomenon, referred to as electroluminescence, leads to the efficient emission of visible photons and is the basis of domestic lighting devices (e.g., light-emitting diodes). In principle, electroluminescence can lead to mid-infrared (mid-IR) emission of confined light-matter excitations called phonon-polaritons, resulting from the coupling of photons with crystal lattice vibrations (optical phonons). In particular, phonon-polaritons arising in the van der Waals crystal hexagonal boron nitride (hBN) exhibit hyperbolic dispersion, which enhances light-matter coupling. For this reason, electroluminescence of hyperbolic phonon-polaritons (HPhPs) has been proposed as an explanation for the peculiar radiative energy transfer within hBN-encapsulated graphene transistors. However, since HPhPs are confined, they are inaccessible in the far-field, so that any hint of electroluminescence is only based on indirect electronic signatures and needs to be confirmed by direct observation. Here, we demonstrate far-field mid-IR (λ = 6.5 μm) electroluminescence of HPhPs excited by strongly biased high-mobility graphene within a van der Waals heterostructure, and we quantify the associated radiative energy transfer through the material. The presence of HPhPs is revealed via far-field mid-IR spectroscopy due to their elastic scattering at discontinuities in the heterostructure. The associated radiative flux is quantified by mid-IR pyrometry of the substrate receiving the energy. This radiative energy transfer is shown to be reduced in hBN with nanoscale inhomogeneities, demonstrating the central role of the electromagnetic environment in this process.
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Submitted 8 July, 2024; v1 submitted 12 October, 2023;
originally announced October 2023.
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Electroluminescence of the graphene 2D semi-metal
Authors:
A. Schmitt,
L. Abou-Hamdan,
M. Tharrault,
S. Rossetti,
D. Mele,
R. Bretel,
A. Pierret,
M. Rosticher,
P. Morfin,
T. Taniguchi,
K. Watanabe,
J. M. Berroir,
G. Fève,
G. Ménard,
B. Plaçais,
C. Voisin,
J. P. Hugonin,
J. J. Greffet,
P. Bouchon,
Y. De Wilde,
E. Baudin
Abstract:
Electroluminescence, a non-thermal radiative process, is ubiquitous in semi-conductors and insulators but fundamentally precluded in metals. We show here that this restriction can be circumvented in high-quality graphene. By investigating the radiative emission of semi-metallic graphene field-effect transistors over a broad spectral range, spanning the near- and mid-infrared, we demonstrate direct…
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Electroluminescence, a non-thermal radiative process, is ubiquitous in semi-conductors and insulators but fundamentally precluded in metals. We show here that this restriction can be circumvented in high-quality graphene. By investigating the radiative emission of semi-metallic graphene field-effect transistors over a broad spectral range, spanning the near- and mid-infrared, we demonstrate direct far-field electroluminescence from hBN-encapsulated graphene in the mid-infrared under large bias in ambient conditions. Through a series of test experiments ruling out its incandescence origin, we determine that the electroluminescent signal results from the electrical pum** produced by interband tunneling. We show that the mid-infrared electroluminescence is spectrally shaped by a natural quarter-wave resonance of the heterostructure. This work invites a reassessment of the use of metals and semi-metals as non-equilibrium light emitters, and the exploration of their intriguing specificities in terms of carrier injection and relaxation, as well as emission tunability and switching speed.
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Submitted 8 June, 2023;
originally announced June 2023.
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Spectral fingerprint of quantum confinement in single CsPbBr$_3$ nanocrystals
Authors:
Mohamed-Raouf Amara,
Zakaria Said,
Caixia Huo,
Aurélie Pierret,
Christophe Voisin,
Weibo Gao,
Qihua Xiong,
Carole Diederichs
Abstract:
Lead halide perovskite nanocrystals are promising materials for classical and quantum light emission. To understand these outstanding properties, a thorough analysis of the band-edge exciton emission is needed which is not reachable in ensemble and room temperature studies because of broadening effects. Here, we report on a cryogenic-temperature study of the photoluminescence of single CsPbBr$_3$…
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Lead halide perovskite nanocrystals are promising materials for classical and quantum light emission. To understand these outstanding properties, a thorough analysis of the band-edge exciton emission is needed which is not reachable in ensemble and room temperature studies because of broadening effects. Here, we report on a cryogenic-temperature study of the photoluminescence of single CsPbBr$_3$ NCs in the intermediate quantum confinement regime. We reveal the size-dependence of the spectral features observed: the bright-triplet exciton energy splittings, the trion and biexciton binding energies as well as the optical phonon replica spectrum. In addition, we show that bright triplet energy splittings are consistent with a pure exchange model and that the variety of polarisation properties and spectra recorded can be rationalised simply by considering the orientation of the emitting dipoles and the populations of the emitting states.
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Submitted 31 March, 2023; v1 submitted 23 January, 2023;
originally announced January 2023.
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Dielectric permittivity, conductivity and breakdown field of hexagonal boron nitride
Authors:
A. Pierret,
D. Mele,
H. Graef,
J. Palomo,
T. Taniguchi,
K. Watanabe,
Y. Li,
B. Toury,
C. Journet,
P. Steyer,
V. Garnier,
A. Loiseau,
J-M. Berroir,
E. Bocquillon,
G. Fève,
C. Voisin,
E. Baudin,
M. Rosticher,
B. Plaçais
Abstract:
In view of the extensive use of hexagonal boron nitride (hBN) in 2D material electronics, it becomes important to refine its dielectric characterization in terms of low-field permittivity and high-field strength and conductivity up to the breakdown voltage. The present study aims at filling this gap using DC and RF transport in two Au-hBN-Au capacitor series of variable thickness in the 10--100 nm…
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In view of the extensive use of hexagonal boron nitride (hBN) in 2D material electronics, it becomes important to refine its dielectric characterization in terms of low-field permittivity and high-field strength and conductivity up to the breakdown voltage. The present study aims at filling this gap using DC and RF transport in two Au-hBN-Au capacitor series of variable thickness in the 10--100 nm range, made of large high-pressure, high-temperature (HPHT) crystals and a polymer derivative ceramics (PDC) crystals. We deduce an out-of-plane low field dielectric constant $ε_\parallel=3.4\pm0.2$ consistent with the theoretical prediction of Ohba et al., that narrows down the generally accepted window $ε_\parallel=3$--$4$. The DC-current leakage at high-field is found to obey the Frenkel-Pool law for thermally-activated trap-assisted electron transport with a dynamic dielectric constant $ε_\parallel\simeq3.1$ and a trap energy $Φ_B\simeq1.3\;\mathrm{eV}$, that is comparable with standard technologically relevant dielectrics.
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Submitted 28 January, 2022; v1 submitted 15 January, 2022;
originally announced January 2022.
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Position-controlled quantum emitters with reproducible emission wavelength in hexagonal boron nitride
Authors:
Clarisse Fournier,
Alexandre Plaud,
Sébastien Roux,
Aurélie Pierret,
Michael Rosticher,
Kenji Watanabe,
Takashi Taniguchi,
Stéphanie Buil,
Xavier Quélin,
Julien Barjon,
Jean-Pierre Hermier,
Aymeric Delteil
Abstract:
Single photon emitters (SPEs) in low-dimensional layered materials have recently gained a large interest owing to the auspicious perspectives of integration and extreme miniaturization offered by this class of materials. However, accurate control of both the spatial location and the emission wavelength of the quantum emitters is essentially lacking to date, thus hindering further technological ste…
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Single photon emitters (SPEs) in low-dimensional layered materials have recently gained a large interest owing to the auspicious perspectives of integration and extreme miniaturization offered by this class of materials. However, accurate control of both the spatial location and the emission wavelength of the quantum emitters is essentially lacking to date, thus hindering further technological steps towards scalable quantum photonic devices. Here, we evidence SPEs in high purity synthetic hexagonal boron nitride (hBN) that can be activated by an electron beam at chosen locations. SPE ensembles are generated with a spatial accuracy better than the cubed emission wavelength, thus opening the way to integration in optical microstructures. Stable and bright single photon emission is subsequently observed in the visible range up to room temperature upon non-resonant laser excitation. Moreover, the low-temperature emission wavelength is reproducible, with an ensemble distribution of width 3 meV, a statistical dispersion that is more than one order of magnitude lower than the narrowest wavelength spreads obtained in epitaxial hBN samples. Our findings constitute an essential step towards the realization of top-down integrated devices based on identical quantum emitters in 2D materials.
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Submitted 8 July, 2021; v1 submitted 24 November, 2020;
originally announced November 2020.
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Excitonic recombinations in hBN: from bulk to exfoliated layers
Authors:
Aurélie Pierret,
Jorge Loayza,
Bruno Berini,
Andreas Betz,
Bernard Plaçais,
François Ducastelle,
Julien Barjon,
Annick Loiseau
Abstract:
Hexagonal boron nitride (h-BN) and graphite are structurally similar but with very different properties. Their combination in graphene-based devices meets now a huge research focus, and it becomes particularly important to evaluate the role played by crystalline defects in them. In this work, the cathodoluminescence (CL) properties of hexagonal boron nitride crystallites are reported and compared…
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Hexagonal boron nitride (h-BN) and graphite are structurally similar but with very different properties. Their combination in graphene-based devices meets now a huge research focus, and it becomes particularly important to evaluate the role played by crystalline defects in them. In this work, the cathodoluminescence (CL) properties of hexagonal boron nitride crystallites are reported and compared to those of nanosheets mechanically exfoliated from them. First the link between the presence of structural defects and the recombination intensity of bound-excitons, the so-called D series, is confirmed. Low defective h-BN regions are further evidenced by CL spectral map** (hyperspectral imaging), allowing us to observe new features in the near-band-edge region, tentatively attributed to phonon replica of exciton recombinations. Second the h-BN thickness was reduced down to six atomic layers, using mechanical exfoliation, as evidenced by atomic force microscopy. Even at these low thicknesses, the luminescence remains intense and exciton recombination energies are not strongly modified with respect to the bulk, as expected from theoretical calculations indicating extremely compact excitons in h-BN.
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Submitted 6 February, 2014; v1 submitted 12 June, 2013;
originally announced June 2013.
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Exciton and interband optical transitions in hBN single crystal
Authors:
Luc Museur,
Gurvan Brasse,
Aurélie Pierret,
Sylvain Maine,
Brigitte Attal-Trétout,
François Ducastelle,
Annick Loiseau,
Julien Barjon,
Kenji Watanabe,
Takashi Taniguchi,
Andreï Kanaev
Abstract:
Near band gap photoluminescence (PL) of hBN single crystal has been studied at cryogenic temperatures with synchrotron radiation excitation. The PL signal is dominated by the D-series previously assigned to excitons trapped on structural defects. A much weaker S-series of self-trapped excitons at 5.778 eV and 5.804 eV has been observed using time-window PL technique. The S-series excitation spectr…
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Near band gap photoluminescence (PL) of hBN single crystal has been studied at cryogenic temperatures with synchrotron radiation excitation. The PL signal is dominated by the D-series previously assigned to excitons trapped on structural defects. A much weaker S-series of self-trapped excitons at 5.778 eV and 5.804 eV has been observed using time-window PL technique. The S-series excitation spectrum shows a strong peak at 6.02 eV, assigned to free exciton absorption. Complementary photoconductivity and PL measurements set the band gap transition energy to 6.4 eV and the Frenkel exciton binding energy larger than 380 meV.
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Submitted 24 February, 2011;
originally announced February 2011.
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Generic nano-imprint process for fabrication of nanowire arrays
Authors:
Aurelie Pierret,
Moira Hocevar,
Silke L. Diedenhofen,
Rienk E. Algra,
E. Vlieg,
Eugene C. Timmering,
Marc A. Verschuuren,
George W. G. Immink,
Marcel A. Verheijen,
Erik P. A. M. Bakkers
Abstract:
A generic process has been developed to grow nearly defect free arrays of (heterostructured) InP and GaP nanowires. Soft nanoimprint lithography has been used to pattern gold particle arrays on full 2 inch substrates. After lift-off organic residues remain on the surface, which induce the growth of additional undesired nanowires. We show that cleaning of the samples before growth with piranha so…
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A generic process has been developed to grow nearly defect free arrays of (heterostructured) InP and GaP nanowires. Soft nanoimprint lithography has been used to pattern gold particle arrays on full 2 inch substrates. After lift-off organic residues remain on the surface, which induce the growth of additional undesired nanowires. We show that cleaning of the samples before growth with piranha solution in combination with a thermal anneal at 550 C for InP and 700 C for GaP results in uniform nanowire arrays with 1% variation in nanowire length, and without undesired extra nanowires. Our chemical cleaning procedure is applicable to other lithographic techniques such as e-beam lithography, and therefore represents a generic process.
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Submitted 11 November, 2009;
originally announced November 2009.
