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Emergence of Topological Bimerons in Monolayer CrSBr
Authors:
Baishun Yang,
Xiufeng Han,
Silvia Picozzi
Abstract:
The rich and fascinating physics of topological spin textures in van der Waals two-dimensional magnets has motivated recent growing interests, though a comprehensive understanding remains elusive. Here, in atomistic simulations on monolayer CrSBr, we find two magnetic phases emerging under non-equilibrium conditions at distinct temperatures, a standard ferromagnetic transition Tc and a lower tempe…
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The rich and fascinating physics of topological spin textures in van der Waals two-dimensional magnets has motivated recent growing interests, though a comprehensive understanding remains elusive. Here, in atomistic simulations on monolayer CrSBr, we find two magnetic phases emerging under non-equilibrium conditions at distinct temperatures, a standard ferromagnetic transition Tc and a lower temperature T*. Moreover, the real-space analysis of the spin texture reveals the emergence of metastable topological bimeron defects below T*, showing an algebraic-like decaying spin-spin correlation function. The Dzyaloshinskii-Moriya interaction, induced by the local site asymmetry in the centrosymmetric CrSBr monolayer, is proved to be the origin of the bimerons formation. Furthermore, the increasing bimerons density upon increasing the cooling rate follows a Kibble-Zurek behavior, suggesting a handle to drive and control topological bimerons below T*. Our results put forward CrSBr as an important candidate for the investigation of the dynamical behavior of bimerons in vdW magnets.
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Submitted 25 June, 2024;
originally announced June 2024.
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Interplay of altermagnetism and weak ferromagnetism in two-dimensional RuF$_4$
Authors:
Marko Milivojević,
Marko Orozović,
Silvia Picozzi,
Martin Gmitra,
Srdjan Stavrić
Abstract:
Gaining growing attention in spintronics is a class of magnets displaying zero net magnetization and spin-split electronic bands called altermagnets. Here, by combining density functional theory and symmetry analysis, we show that RuF$_4$ monolayer is a two-dimensional $d$-wave altermagnet. Spin-orbit coupling leads to pronounced spin splitting of the electronic bands at the $Γ$ point by…
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Gaining growing attention in spintronics is a class of magnets displaying zero net magnetization and spin-split electronic bands called altermagnets. Here, by combining density functional theory and symmetry analysis, we show that RuF$_4$ monolayer is a two-dimensional $d$-wave altermagnet. Spin-orbit coupling leads to pronounced spin splitting of the electronic bands at the $Γ$ point by $\sim 100$ meV and turns the RuF$_4$ into a weak ferromagnet due to non trivial spin-momentum locking that cants the Ru magnetic moments. The net magnetic moment scales linearly with the spin-orbit coupling strength. Using group theory we derive an effective spin Hamiltonian capturing the spin-splitting and spin-momentum locking of the electronic bands. Disentanglement of the altermagnetic and spin-orbit coupling induced spin splitting uncovers to which extent the altermagnetic properties are affected by the spin-orbit coupling. Our results move the spotlight to the non trivial spin-momentum locking and weak ferromagnetism in the two-dimensional altermagnets relevant for novel venues in this emerging field of material science research.
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Submitted 27 January, 2024;
originally announced January 2024.
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Charge do** into spin minority states mediates doubling of $T_\mathrm{C}$ in ferromagnetic CrGeTe$_3$
Authors:
Liam Trzaska,
Lei Qiao,
Matthew D. Watson,
Monica Ciomaga Hatnean,
Igor Marković,
Edgar Abarca Morales,
Tommaso Antonelli,
Cephise Cacho,
Geetha Balakrishnan,
Wei Ren,
Silvia Picozzi,
Phil D. C. King
Abstract:
The recent discovery of the persistence of long-range magnetic order when van der Waals layered magnets are thinned towards the monolayer limit has provided a tunable platform for the engineering of novel magnetic structures and devices. Here, we study the evolution of the electronic structure of CrGeTe$_3$ as a function of electron do** in the surface layer. From angle-resolved photoemission sp…
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The recent discovery of the persistence of long-range magnetic order when van der Waals layered magnets are thinned towards the monolayer limit has provided a tunable platform for the engineering of novel magnetic structures and devices. Here, we study the evolution of the electronic structure of CrGeTe$_3$ as a function of electron do** in the surface layer. From angle-resolved photoemission spectroscopy, we observe spectroscopic fingerprints that this electron do** drives a marked increase in $T_\mathrm{C}$, reaching values more than double that of the undoped material, in agreement with recent studies using electrostatic gating. Together with density functional theory calculations and Monte Carlo simulations, we show that, surprisingly, the increased $T_\mathrm{C}$ is mediated by the population of spin-minority Cr $t_{2g}$ states, forming a half-metallic 2D electron gas at the surface. We show how this promotes a novel variant of double exchange, and unlocks a significant influence of the Ge -- which was previously thought to be electronically inert in this system -- in mediating Cr-Cr exchange.
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Submitted 1 December, 2023;
originally announced December 2023.
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Avoided metallicity in a hole-doped Mott insulator on a triangular lattice
Authors:
Chi Ming Yim,
Gesa-R. Siemann,
Srdjan Stavrić,
Seunghyun Khim,
Izidor Benedičič,
Philip A. E. Murgatroyd,
Tommaso Antonelli,
Matthew D. Watson,
Andrew P. Mackenzie,
Silvia Picozzi,
Phil D. C. King,
Peter Wahl
Abstract:
Charge carrier do** of a Mott insulator is known to give rise to a wide variety of exotic emergent states, from high-temperature superconductivity to various charge, spin, and orbital orders. The physics underpinning their evolution is, however, poorly understood. A major challenge is the chemical complexity associated with traditional routes to the addition or removal of carriers. Here, we stud…
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Charge carrier do** of a Mott insulator is known to give rise to a wide variety of exotic emergent states, from high-temperature superconductivity to various charge, spin, and orbital orders. The physics underpinning their evolution is, however, poorly understood. A major challenge is the chemical complexity associated with traditional routes to the addition or removal of carriers. Here, we study the Mott insulating CrO$_2$ layer of the delafossite oxide PdCrO$_2$, where an intrinsic polar catastrophe provides a clean route to induce substantial do** of the surface layer. Despite this, from scanning tunneling microscopy and angle-resolved photoemission, we find that the surface retains an insulating character, but with a modified electronic structure and the development of a short-range ordered state with a distinct $(\sqrt{7}\times\sqrt{7})\mathrm{R}\pm 19.1^\circ$ periodicity. From density functional theory, we demonstrate how this reflects the formation of an intricate charge disproportionation that results in an insulating ground state of the surface layer that is disparate from the hidden Mott insulator found in the bulk. By applying voltage pulses to the surface layer, we induce substantial local modifications to this state, which we find relax on a time scale of tens of minutes, pointing to a glassy nature of the charge-disproportionated insulator realised here.
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Submitted 28 November, 2023;
originally announced November 2023.
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Delving into the anisotropic interlayer exchange in bilayer CrI$_3$
Authors:
Srdjan Stavrić,
Paolo Barone,
Silvia Picozzi
Abstract:
Bilayer CrI$_3$ attracted much attention owing to peculiar switching between the layered ferromagnetic and antiferromagnetic order upon stacking alternation. This finding pointed out the importance of the apparently small interlayer exchange, yet, existing literature addresses only its isotropic part. To fill this gap, we combine the density functional theory with Hamiltonian modeling to examine t…
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Bilayer CrI$_3$ attracted much attention owing to peculiar switching between the layered ferromagnetic and antiferromagnetic order upon stacking alternation. This finding pointed out the importance of the apparently small interlayer exchange, yet, existing literature addresses only its isotropic part. To fill this gap, we combine the density functional theory with Hamiltonian modeling to examine the anisotropic interlayer exchange in bilayer CrI$_3$ - Dzyaloshinskii-Moriya (DMI) and the Kitaev interaction (KI). We develop and apply a novel computational procedure that yields the off-diagonal exchange matrix elements with $μ$eV accuracy. Inspecting two types of bilayer stacking, we found a weak interlayer KI and much stronger DMI between the sublattices of monoclinic bilayer and their complete absence in rhombohedral bilayer. We show how these anisotropic interactions depend on the interlayer distance, stacking sequence, and the spin-orbit coupling strength and suggest the dominant superexchange processes at play. In addition, we demonstrate that the single-ion anisotropy largely depends on stacking, increasing by 50% from monoclinic to rhombohedral structure. Remarkably, our findings prove that iodines, owing to their spatially extended 5p orbitals featuring strong spin-orbit coupling, are extremely efficient in mediating DMI across the van der Waals gap in two-dimensional magnetic heterostructures. Given that similar findings were previously demonstrated only in metallic multilayers where the DMI shows a much longer range, our study gives promise that the chiral control of spin textures can be achieved in two-dimensional semiconducting magnetic bilayers whose ligands feature strong spin-orbit coupling.
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Submitted 25 May, 2023;
originally announced May 2023.
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Covalency, correlations, and inter-layer interactions governing the magnetic and electronic structure of Mn$_3$Si$_2$Te$_6$
Authors:
Chiara Bigi,
Lei Qiao,
Chao Liu,
Paolo Barone,
Monica Ciomaga Hatnean,
Gesa-R. Siemann,
Barat Achinuq,
Daniel Alexander Mayoh,
Giovanni Vinai,
Vincent Polewczyk,
Deepak Dagur,
Federico Mazzola,
Peter Bencok,
Thorsten Hesjedal,
Gerrit van der Laan,
Wei Ren,
Geetha Balakrishnan,
Silvia Picozzi,
Phil D. C. King
Abstract:
Mn$_3$Si$_2$Te$_6$ is a rare example of a layered ferrimagnet. It has recently been shown to host a colossal angular magnetoresistance as the spin orientation is rotated from the in- to out-of-plane direction, proposed to be underpinned by a topological nodal-line degeneracy in its electronic structure. Nonetheless, the origins of its ferrimagnetic structure remain controversial, while its experim…
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Mn$_3$Si$_2$Te$_6$ is a rare example of a layered ferrimagnet. It has recently been shown to host a colossal angular magnetoresistance as the spin orientation is rotated from the in- to out-of-plane direction, proposed to be underpinned by a topological nodal-line degeneracy in its electronic structure. Nonetheless, the origins of its ferrimagnetic structure remain controversial, while its experimental electronic structure, and the role of correlations in sha** this, are little explored to date. Here, we combine x-ray and photoemission-based spectroscopies with first-principles calculations, to probe the elemental-selective electronic structure and magnetic order in Mn$_3$Si$_2$Te$_6$. Through these, we identify a marked Mn-Te hybridisation, which weakens the electronic correlations and enhances the magnetic anisotropy. We demonstrate how this strengthens the magnetic frustration in Mn$_3$Si$_2$Te$_6$, which is key to stabilising its ferrimagnetic order, and find a crucial role of both exchange interactions extending beyond nearest-neighbours and anti-symmetric exchange in dictating its ordering temperature. Together, our results demonstrate a powerful methodology of using experimental electronic structure probes to constrain the parameter space for first-principles calculations of magnetic materials, and through this approach, reveal a pivotal role played by covalency in stabilising the ferrimagnetic order in Mn$_3$Si$_2$Te$_6$.
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Submitted 1 March, 2023;
originally announced March 2023.
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Orbital order and ferromagnetism in LaMnO3 doped with Ga
Authors:
C. Autieri,
M. Cuoco,
G. Cuono,
S. Picozzi,
C. Noce
Abstract:
We study from first principles the magnetic, electronic, orbital and structural properties of the LaMnO3 doped with gallium replacing the Mn-site. The gallium do** reduces the Jahn-Teller effect, and consequently the bandgap. Surprisingly, the system does not go towards a metallic phase because of the Mn-bandwidth reduction. The Ga-do** tends to reduce the orbital order typical of bulk antifer…
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We study from first principles the magnetic, electronic, orbital and structural properties of the LaMnO3 doped with gallium replacing the Mn-site. The gallium do** reduces the Jahn-Teller effect, and consequently the bandgap. Surprisingly, the system does not go towards a metallic phase because of the Mn-bandwidth reduction. The Ga-do** tends to reduce the orbital order typical of bulk antiferromagnetic LaMnO3 and consequently weakens the antiferromagnetic phase. The Ga-do** favors the G-type orbital order and layered-ordered ferromagnetic perovskite at x=0.50, both effects contribute to the formation of the insulating ferromagnetic phase in LaMn1-xGaxO3.
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Submitted 10 October, 2022;
originally announced October 2022.
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Microscopic origin of magnetism in monolayer $3d$ transition metal dihalides
Authors:
Kira Riedl,
Danila Amoroso,
Steffen Backes,
Aleksandar Razpopov,
Thi Phuong Thao Nguyen,
Kunihiko Yamauchi,
Paolo Barone,
Stephen M. Winter,
Silvia Picozzi,
Roser Valenti
Abstract:
Motivated by the recent wealth of exotic magnetic phases emerging in two-dimensional frustrated lattices, we investigate the origin of possible magnetism in the monolayer family of triangular lattice materials $MX_2$ ($M$={V, Mn, Ni}, $X$={Cl, Br, I}). We first show that consideration of general properties such as filling and hybridization enables to formulate trends for the most relevant magnetic…
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Motivated by the recent wealth of exotic magnetic phases emerging in two-dimensional frustrated lattices, we investigate the origin of possible magnetism in the monolayer family of triangular lattice materials $MX_2$ ($M$={V, Mn, Ni}, $X$={Cl, Br, I}). We first show that consideration of general properties such as filling and hybridization enables to formulate trends for the most relevant magnetic interaction parameters. In particular, we observe that the effects of spin-orbit coupling (SOC) can be effectively tuned through the ligand elements as the considered 3$d$ transition metal ions do not strongly contribute to the anisotropic component of the inter-site exchange interaction. Consequently, we find that the corresponding SOC matrix-elements differ significantly from the atomic limit. In a next step and by using two complementary approaches based on first principles, we extract realistic effective spin models and find that in the case of heavy ligand elements, SOC effects manifest in anisotropic exchange and single-ion anisotropy only for specific fillings.
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Submitted 31 May, 2022;
originally announced June 2022.
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Finite-size effects on the ferroelectricity in rhombohedral HfO$_2$
Authors:
Francesco Delodovici,
Paolo Barone,
Silvia Picozzi
Abstract:
In this work we analyze the finite-size effects on the structural properties and on the polarization of the rhombohedral phase of HfO$_2$ subjected to a biaxial compressive strain. We show how the presence of surface charges affects the polarization, leading to a strong reduction with respect to its bulk value. This reduction can be ascribed to two mechanisms: the coupling between compressive stra…
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In this work we analyze the finite-size effects on the structural properties and on the polarization of the rhombohedral phase of HfO$_2$ subjected to a biaxial compressive strain. We show how the presence of surface charges affects the polarization, leading to a strong reduction with respect to its bulk value. This reduction can be ascribed to two mechanisms: the coupling between compressive strain and the phase-transition order parameter; the changes in the ferroelectric distortion. We give two alternative explanations of this phenomenon: from an atomistic point of view, analyzing the evolution of the bond lengths, and from a symmetry-analysis point of view, considering the changes in the amplitude of the symmetry-allowed distortions, when a slab configuration is considered. These results are independent on the slab-thickness in the considered range, suggesting the absence of a critical thickness for ferroelectricity in HfO$_2$, in agreement with the proposed improper nature of hafnia ferroelectricity.
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Submitted 11 April, 2022;
originally announced April 2022.
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Towards machine learning for microscopic mechanisms: a formula search for crystal structure stability based on atomic properties
Authors:
Udaykumar Gajera,
Loriano Storchi,
Danila Amoroso,
Francesco Delodovici,
Silvia Picozzi
Abstract:
Machine Learning (ML) techniques are revolutionizing the way to perform efficient materials modeling. Nevertheless, not all the ML approaches allow for the understanding of microscopic mechanisms at play in different phenomena. To address the latter aspect, we propose a combinatorial machine-learning approach to obtain physical formulas based on simple and easily-accessible ingredients, such as at…
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Machine Learning (ML) techniques are revolutionizing the way to perform efficient materials modeling. Nevertheless, not all the ML approaches allow for the understanding of microscopic mechanisms at play in different phenomena. To address the latter aspect, we propose a combinatorial machine-learning approach to obtain physical formulas based on simple and easily-accessible ingredients, such as atomic properties. The latter are used to build materials features that are finally employed, through Linear Regression, to predict the energetic stability of semiconducting binary compounds with respect to zincblende and rocksalt crystal structures. The adopted models are trained using dataset built from first-principles calculations. Our results show that already one-dimensional (1D) formulas well describe the energetics; a simple grid-search optimization of the automatically-obtained 1D-formulas enhances the prediction performances at a very small computational cost. In addition, our approach allows to highlight the role of the different atomic properties involved in the formulas. The computed formulas clearly indicate that "spatial" atomic properties (i.e. radii indicating maximum probability densities for $s,p,d$ electronic shells) drive the stabilization of one crystal structure with respect to the other, suggesting the major relevance of the radius associated to the $p$-shell of the cation species.
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Submitted 15 February, 2022;
originally announced February 2022.
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Curved Magnetism in CrI$_3$
Authors:
Alexander Edström,
Danila Amoroso,
Silvia Picozzi,
Paolo Barone,
Massimiliano Stengel
Abstract:
Curved magnets attract considerable interest for their unusually rich phase diagram, often encompassing exotic (e.g., topological or chiral) spin states. Micromagnetic simulations are playing a central role in the theoretical understanding of such phenomena; their predictive power, however, rests on the availability of reliable model parameters to describe a given material or nanostructure. Here w…
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Curved magnets attract considerable interest for their unusually rich phase diagram, often encompassing exotic (e.g., topological or chiral) spin states. Micromagnetic simulations are playing a central role in the theoretical understanding of such phenomena; their predictive power, however, rests on the availability of reliable model parameters to describe a given material or nanostructure. Here we demonstrate how non-collinear-spin polarized density-functional theory can be used to determine the flexomagnetic coupling coefficients in real systems. By focusing on monolayer CrI$_3$, we find a crossover as a function of curvature between a magnetization normal to the surface to a cycloidal state, which we rationalize in terms of effective anisotropy and Dzyaloshinskii-Moriya contributions to the magnetic energy. Our results reveal an unexpectedly large impact of spin-orbit interactions on the curvature-induced anisotropy, which we discuss in the context of existing phenomenological models.
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Submitted 8 March, 2022; v1 submitted 28 October, 2021;
originally announced October 2021.
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Evidence for a single-layer van der Waals multiferroic
Authors:
Qian Song,
Connor A. Occhialini,
Emre Ergeçen,
Batyr Ilyas,
Danila Amoroso,
Paolo Barone,
Jesse Kapeghian,
Kenji Watanabe,
Takashi Taniguchi,
Antia S. Botana,
Silvia Picozzi,
Nuh Gedik,
Riccardo Comin
Abstract:
Multiferroic materials have garnered wide interest for their exceptional static and dynamical magnetoelectric properties. In particular, type-II multiferroics exhibit an inversion-symmetry-breaking magnetic order which directly induces a ferroelectric polarization through various mechanisms, such as the spin-current or the inverse Dzyaloshinskii-Moriya effect. This intrinsic coupling between the m…
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Multiferroic materials have garnered wide interest for their exceptional static and dynamical magnetoelectric properties. In particular, type-II multiferroics exhibit an inversion-symmetry-breaking magnetic order which directly induces a ferroelectric polarization through various mechanisms, such as the spin-current or the inverse Dzyaloshinskii-Moriya effect. This intrinsic coupling between the magnetic and dipolar order parameters results in record-strength magnetoelectric effects. Two dimensional materials possessing such intrinsic multiferroic properties have been long sought for harnessing magnetoelectric coupling in nanoelectronic devices. Here, we report the discovery of type-II multiferroic order in a single atomic layer of the transition metal-based van der Waals material NiI2. The multiferroic state of NiI2 is characterized by a proper-screw spin helix with given handedness, which couples to the charge degrees of freedom to produce a chirality-controlled electrical polarization. We use circular dichroic Raman measurements to directly probe the magneto-chiral ground state and its electromagnon modes originating from dynamic magnetoelectric coupling. Using birefringence and second-harmonic generation measurements, we detect a highly anisotropic electronic state simultaneously breaking three-fold rotational and inversion symmetry, and supporting polar order. The evolution of the optical signatures as a function of temperature and layer number surprisingly reveals an ordered magnetic, polar state that persists down to the ultrathin limit of monolayer NiI2. These observations establish NiI2 and transition metal dihalides as a new platform for studying emergent multiferroic phenomena, chiral magnetic textures and ferroelectricity in the two-dimensional limit.
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Submitted 17 April, 2022; v1 submitted 14 June, 2021;
originally announced June 2021.
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Giant Biquadratic Exchange in 2D Magnets and its Role in Stabilizing Ferromagnetism of NiCl2 Monolayer
Authors:
J. Y. Ni,
X. Y. Li,
D. Amoroso,
X. He,
J. S. Feng,
E. J. Kan,
S. Picozzi,
H. J. Xiang
Abstract:
Two-dimensional (2D) van der Waals (vdW) magnets provide an ideal platform for exploring, on the fundamental side, new microscopic mechanisms and for develo**, on the technological side, ultra-compact spintronic applications. So far, bilinear spin Hamiltonians have been commonly adopted to investigate the magnetic properties of 2D magnets, neglecting higher order magnetic interactions. However,…
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Two-dimensional (2D) van der Waals (vdW) magnets provide an ideal platform for exploring, on the fundamental side, new microscopic mechanisms and for develo**, on the technological side, ultra-compact spintronic applications. So far, bilinear spin Hamiltonians have been commonly adopted to investigate the magnetic properties of 2D magnets, neglecting higher order magnetic interactions. However, we here provide quantitative evidence of giant biquadratic exchange interactions in monolayer NiX2 (X=Cl, Br and I), by combining first-principles calculations and the newly developed machine learning method for constructing Hamiltonian. Interestingly, we show that the ferromagnetic ground state within NiCl2 single layers cannot be explained by means of bilinear Heisenberg Hamiltonian; rather, the nearest-neighbor biquadratic interaction is found to be crucial. Furthermore, using a three-orbitals Hubbard model, we propose that the giant biquadratic exchange interaction originates from large hop** between unoccupied and occupied orbitals on neighboring magnetic ions. On a general framework, our work suggests biquadratic exchange interactions to be important in 2D magnets with edge-shared octahedra.
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Submitted 3 June, 2021;
originally announced June 2021.
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Tuning of magnetic structures topology via single-ion anisotropy and magnetic field in frustrated 2D semiconductors
Authors:
Danila Amoroso,
Paolo Barone,
Silvia Picozzi
Abstract:
The effects of competing magnetic interactions in stabilizing different spin configurations are drawing a renewed attention in order to both unveil emerging topological spin textures and to highlight microscopic mechanisms leading to their stabilization. The possible key role of the two-site exchange anisotropy in selecting specific helicity and vorticity of skyrmionic lattices has only recently b…
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The effects of competing magnetic interactions in stabilizing different spin configurations are drawing a renewed attention in order to both unveil emerging topological spin textures and to highlight microscopic mechanisms leading to their stabilization. The possible key role of the two-site exchange anisotropy in selecting specific helicity and vorticity of skyrmionic lattices has only recently been proposed. In this work we explore the phase diagram of a frustrated localized magnet on a two-dimensional centrosymmetric triangular lattice, focusing on the interplay between the two-ion anisotropy (TIA) and the single-ion anisotropy (SIA). The effects of an external magnetic field applied perpendicularly to the magnetic layer are also investigated. By means of Monte Carlo simulations, we find a profusion of different spin configurations, going from trivial to high-order Q skyrmionic and meronic lattices. In closer detail, we find that a dominant role is played by the two-ion over the single-ion anisotropy in determining the planar spin texture, whereas the strength and sign of SIA, together with the magnitude of the magnetic field, tune the perpendicular spin components, mostly affecting the polarity (and, in turn, the topology) of the spin-texture. Our analysis confirms the crucial role of anisotropic symmetric exchange in systems with dominant short-range interactions, at the same time predicting a rich variety of complex magnetic textures that may arise from a fine tuning of competing anisotropic mechanisms.
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Submitted 24 May, 2021;
originally announced May 2021.
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Trilinear coupling driven ferroelectricity in HfO$_2$
Authors:
Francesco Delodovici,
Paolo Barone,
Silvia Picozzi
Abstract:
Ferroelectricity in hafnia is often regarded as a breakthrough discovery in ferroelectrics, potentially able to revolutionize the whole field. Despite increasing interests, a comprehensive understanding of the many factors driving the ferroelectric stabilization is still lacking. We here address the phase transition in terms of a Landau-theory-based approach, by analyzing symmetry-allowed distorti…
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Ferroelectricity in hafnia is often regarded as a breakthrough discovery in ferroelectrics, potentially able to revolutionize the whole field. Despite increasing interests, a comprehensive understanding of the many factors driving the ferroelectric stabilization is still lacking. We here address the phase transition in terms of a Landau-theory-based approach, by analyzing symmetry-allowed distortions connecting the high-symmetry paraelectric tetragonal phase to the low-symmetry polar orthorhombic phase. By means of first-principles simulations, we find that the $Γ_{3-}$ polar mode is only weakly unstable, whereas the other two symmetry-allowed distortions, non-polar Y$_{2+}$ and anti-polar Y$_{4-}$ are hard modes. None of the modes, taken alone or combined with one other mode, is able to drive the transition: the key factor in stabilizing the polar phase is identified as the strong trilinear coupling among the three modes. Furthermore, the experimentally acknowledged importance of substrate-induced effects in the growth of HfO$_2$ ferroelectric thin films, along with the lack of a clear order parameter in the transition, suggested the extension of our analysis to strain effects. Our findings suggest a complex behaviour of the Y$_{2+}$ mode, which become unstable under certain strain conditions and an overall unstable behaviour for the $Γ_{3-}$ polar mode for all the strain states. A robust result emerges from our analysis: independently of the different applied strain (compressive or tensile, applied along orthorhombic axes), the need of a simultaneous excitation of the three coupled modes remain unaltered. Finally, when applied to mimic experimental growth conditions under strain, our analysis show a further stabilization of the ferroelectric phase with respect to the unstrained case, in agreeement with experimental findings.
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Submitted 23 March, 2021;
originally announced March 2021.
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Room-temperature ferroelectric switching of spin-to-charge conversion in GeTe
Authors:
Sara Varotto,
Luca Nessi,
Stefano Cecchi,
Jagoda Sławińska,
Paul Noël,
Simone Petrò,
Federico Fagiani,
Alessandro Novati,
Matteo Cantoni,
Daniela Petti,
Edoardo Albisetti,
Marcio Costa,
Raffaella Calarco,
Marco Buongiorno Nardelli,
Manuel Bibes,
Silvia Picozzi,
Jean-Philippe Attané,
Laurent Vila,
Riccardo Bertacco,
Christian Rinaldi
Abstract:
Since its birth in the 1990s, semiconductor spintronics has suffered from poor compatibility with ferromagnets as sources of spin. While the broken inversion symmetry of some semiconductors may alternatively allow for spin-charge interconversion, its control by electric fields is volatile. Ferroelectric Rashba semiconductors stand as appealing materials unifying semiconductivity, large spin-orbit…
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Since its birth in the 1990s, semiconductor spintronics has suffered from poor compatibility with ferromagnets as sources of spin. While the broken inversion symmetry of some semiconductors may alternatively allow for spin-charge interconversion, its control by electric fields is volatile. Ferroelectric Rashba semiconductors stand as appealing materials unifying semiconductivity, large spin-orbit coupling, and non-volatility endowed by ferroelectricity. However, their potential for spintronics has been little explored. Here, we demonstrate the non-volatile, ferroelectric control of spin-to-charge conversion at room temperature in epitaxial GeTe films. We show that ferroelectric switching by electrical gating is possible in GeTe despite its high carrier density. We reveal a spin-to-charge conversion as effective as in Pt, but whose sign is controlled by the orientation of the ferroelectric polarization. The comparison between theoretical and experimental data suggests that spin Hall effect plays a major role for switchable conversion. These results open a route towards devices combining spin-based logic and memory integrated into a silicon-compatible material.
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Submitted 13 March, 2021;
originally announced March 2021.
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Magnetic properties of bilayer VI3: Role of trigonal crystal field and electric-field tuning
Authors:
Thi Phuong Thao Nguyen,
Kunihiko Yamauchi,
Tamio Oguchi,
Danila Amoroso,
Silvia Picozzi
Abstract:
The magnetic properties of two-dimensional VI3 bilayer are the focus of our first-principles analysis, highlighting the role of trigonal crystal-field effects and carried out in comparison with the CrI3 prototypical case, where the effects are absent. In VI3 bilayers, the empty a1g state - consistent with the observed trigonal distortion - is found to play a crucial role in both stabilizing the in…
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The magnetic properties of two-dimensional VI3 bilayer are the focus of our first-principles analysis, highlighting the role of trigonal crystal-field effects and carried out in comparison with the CrI3 prototypical case, where the effects are absent. In VI3 bilayers, the empty a1g state - consistent with the observed trigonal distortion - is found to play a crucial role in both stabilizing the insulating state and in determining the inter-layer magnetic interaction. Indeed, an analysis based on maximally localized Wannier functions allows to evaluate the interlayer exchange interactions in two different VI3 stackings (labelled AB and AB'), to interpret the results in terms of virtual-hop** mechanism, and to highlight the strongest hop** channels underlying the magnetic interlayer coupling. Upon application of electric fields perpendicular to the slab, we find that the magnetic ground-state in the AB' stacking can be switched from antiferromagnetic to ferromagnetic, suggesting VI3 bilayer as an appealing candidate for electric-field-driven miniaturized spintronic devices.
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Submitted 8 February, 2021;
originally announced February 2021.
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Half-metallic ferromagnetism in layered CdOHCl induced by hole do**
Authors:
Hrishit Banerjee,
Paolo Barone,
Silvia Picozzi
Abstract:
Next-generation spintronic devices will benefit from low-dimensionality, ferromagnetism, and half-metallicity, possibly controlled by electric fields. We find these technologically-appealing features to be combined with an exotic microscopic origin of magnetism in doped CdOHCl, a van der Waals material from which 2D layers may be exfoliated. By means of first principles simulations, we predict hom…
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Next-generation spintronic devices will benefit from low-dimensionality, ferromagnetism, and half-metallicity, possibly controlled by electric fields. We find these technologically-appealing features to be combined with an exotic microscopic origin of magnetism in doped CdOHCl, a van der Waals material from which 2D layers may be exfoliated. By means of first principles simulations, we predict homogeneous hole-do** to give rise to $p$-band magnetism in both the bulk and monolayer phases and interpret our findings in terms of Stoner instability: as the Fermi level is tuned via hole-do** through singularities in the 2D-like density of states, ferromagnetism develops with large saturation magnetization of 1 $μ_B$ per hole, leading to a half-metallic behaviour for layer carrier densities of the order of 10$^{14}$ cm$^{-2}$. Furthermore, we put forward electrostatic do** as an additional handle to induce magnetism in monolayers and bilayers of CdOHCl. Upon application of critical electric fields perpendicular to atomically-thin-films (as low as 0.2 V/$A°$ and 0.5 V/$A°$ in the bilayer and monolayer case, respectively), we envisage the emergence of a magnetic half-metallic state. The different behaviour of monolayer vs bilayer systems, as well as an observed asymmetric response to positive and negative electric fields in bilayers, are interpreted in terms of intrinsic polarity of CdOHCl atomic stacks, a distinctive feature of the material. In perspective, given the experimentally accessible magnitude of critical fields in bilayer of CdOHCl, one can envisage $p$ band magnetism to be exploited in miniaturized spintronic devices.
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Submitted 13 August, 2020;
originally announced August 2020.
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Spontaneous skyrmionic lattice from anisotropic symmetric exchange in a Ni-halide monolayer
Authors:
Danila Amoroso,
Paolo Barone,
Silvia Picozzi
Abstract:
Topological spin structures, such as magnetic skyrmions, hold great promises for data storage applications, thanks to their inherent stability. In most cases, skyrmions are stabilized by magnetic fields in non-centrosymmetric systems displaying the chiral Dzyaloshinskii-Moriya exchange interaction, while spontaneous skyrmion lattices have been reported in centrosymmetric itinerant magnets with lon…
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Topological spin structures, such as magnetic skyrmions, hold great promises for data storage applications, thanks to their inherent stability. In most cases, skyrmions are stabilized by magnetic fields in non-centrosymmetric systems displaying the chiral Dzyaloshinskii-Moriya exchange interaction, while spontaneous skyrmion lattices have been reported in centrosymmetric itinerant magnets with long-range interactions. Here, a spontaneous anti-biskyrmion lattice with unique topology and chirality is predicted in the monolayer of a semiconducting and centrosymmetric metal halide, NiI$_2$. Our first-principles and Monte Carlo simulations reveal that the anisotropies of the short-range symmetric exchange, when combined with magnetic frustration, can lead to an emergent chiral interaction that is responsible for the predicted topological spin structures. The proposed mechanism finds a prototypical manifestation in two-dimensional magnets, thus broadening the class of materials that can host spontaneous skyrmionic states.
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Submitted 6 May, 2020;
originally announced May 2020.
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Robust Magnetoelectric Effect in Decorated Graphene/In2Se3 Heterostructure
Authors:
**g Shang,
Xiao Tang,
Yuantong Gu,
Arkady V. Krasheninnikov,
Silvia Picozzi,
Changfeng Chen,
Liangzhi Kou
Abstract:
Magnetoelectric effect is a fundamental physics phenomenon that synergizes electric and magnetic degrees of freedom to generate distinct material responses like electrically tuned magnetism, which serves as a key foundation of the emerging field of spintronics. Here, we show by first-principles studies that ferroelectric (FE) polarization of an In2Se3 monolayer can modulate the magnetism of an adj…
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Magnetoelectric effect is a fundamental physics phenomenon that synergizes electric and magnetic degrees of freedom to generate distinct material responses like electrically tuned magnetism, which serves as a key foundation of the emerging field of spintronics. Here, we show by first-principles studies that ferroelectric (FE) polarization of an In2Se3 monolayer can modulate the magnetism of an adjacent transition-metal (TM) decorated graphene layer via an FE induced electronic transition. The TM nonbonding d-orbital shifts downward and hybridizes with carbon p states near the Fermi level, suppressing the magnetic moment, under one FE polarization, but on reversed FE polarization this TM d-orbital moves upward, restoring the original magnetic moment. This finding of robust magnetoelectric effect in TM decorated graphene/In2Se3 heterostructure offers powerful insights and a promising avenue for experimental exploration of FE controlled magnetism in 2D materials.
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Submitted 6 May, 2020;
originally announced May 2020.
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Disclosing antiferromagnetism in tetragonal Cr2O3 by electrical measurements
Authors:
M. Asa,
C. Autieri,
C. Barone,
C. Mauro,
S. Picozzi,
S. Pagano,
M. Cantoni
Abstract:
The tetragonal phase of chromium (III) oxide, although unstable in the bulk, can be synthesized in epitaxial heterostructures. The theoretical investigation by density functional theory predicts an antiferromagnetic ground state for this compound. We demonstrate experimentally antiferromagnetism up to 40 K in ultrathin films of t-Cr2O3 by electrical measurements exploiting interface effect within…
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The tetragonal phase of chromium (III) oxide, although unstable in the bulk, can be synthesized in epitaxial heterostructures. The theoretical investigation by density functional theory predicts an antiferromagnetic ground state for this compound. We demonstrate experimentally antiferromagnetism up to 40 K in ultrathin films of t-Cr2O3 by electrical measurements exploiting interface effect within a neighboring ultrathin Pt layer. We show that magnetotransport in Pt is affected by both spin-Hall magnetoresistance and magnetic proximity effect while we exclude any role of magnetism for the low-temperature resistance anomaly observed in Pt.
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Submitted 6 November, 2019;
originally announced November 2019.
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Bulk Rashba Effect in Multiferroics: a theoretical prediction for BiCoO3
Authors:
Kunihiko Yamauchi,
Paolo Barone,
Silvia Picozzi
Abstract:
We put forward the concept of a bulk Rashba effect emerging in a multiferroic material, such as an antiferromagnetic system with a polar crystal structure. According to symmetry considerations, while time-reversal and space-inversion symmetries are both broken, there exist specific spin flip** operations that relate opposite spin sites in the magnetic crystal structure. As a consequence, at cert…
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We put forward the concept of a bulk Rashba effect emerging in a multiferroic material, such as an antiferromagnetic system with a polar crystal structure. According to symmetry considerations, while time-reversal and space-inversion symmetries are both broken, there exist specific spin flip** operations that relate opposite spin sites in the magnetic crystal structure. As a consequence, at certain high-symmetry points in the momentum space, the magnetic point group allows the spin angular momentum to be locked to the linear momentum, a typical feature of the Rashba effect. In such a case, spin-splitting effects induced by spin-orbit coupling can arise, similar to what happens in non-magnetic Rashba systems. As a prototypical example, ab-initio calculations of antiferromagnetic BiCoO3 in the polar structure reveal that a large Rashba-like band- and spin- splitting occurs at the conduction band bottom, having a large weight from Bi-p orbital states. Moreover, we show that the spin texture of such a multiferroic can be modulated by applying a magnetic field. In particular, an external in-plane magnetic field is predicted not only to induce spin-canting, but also a distortion of the energy isocontours and a shift of the spin-vortex (centered on the high-symmetry point and characteristic of Rashba effect) along a direction perpendicular to the applied field.
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Submitted 15 October, 2019;
originally announced October 2019.
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Band splitting with vanishing spin polarizations in noncentrosymmetric crystals
Authors:
Kai Liu,
Wei Luo,
Junyi Ji,
Paolo Barone,
Silvia Picozzi,
Hongjun Xiang
Abstract:
The Dresselhaus and Rashba effects are well-known phenomena in solid-state physics, in which spin-orbit coupling (SOC) splits spin-up and spin-down energy bands of nonmagnetic non-centrosymmetric crystals. Here, we discover a new phenomenon, dubbed as band splitting with vanishing spin polarizations (BSVSP), in which, as usual, SOC splits the energy bands in nonmagnetic non-centrosymmetric systems…
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The Dresselhaus and Rashba effects are well-known phenomena in solid-state physics, in which spin-orbit coupling (SOC) splits spin-up and spin-down energy bands of nonmagnetic non-centrosymmetric crystals. Here, we discover a new phenomenon, dubbed as band splitting with vanishing spin polarizations (BSVSP), in which, as usual, SOC splits the energy bands in nonmagnetic non-centrosymmetric systems; surprisingly, however, both split bands show no net spin polarization along certain high-symmetry lines in the Brillouin zone. In order to rationalize this phenomenon, we propose a new classification of point groups into pseudo-polar and non-pseudo-polar groups. By means of first-principles simulations, we demonstrate that BSVSP can take place in both symmorphic (e.g., bulk GaAs) and non-symmorphic systems (e.g., two dimensional ferroelectric SnTe). Furthermore, we propose a novel linear magnetoelectric coupling in reciprocal space, which could be employed to tune the spin polarization with an external electric field. The BSVSP effect and its manipulation could therefore pave a new way to novel spintronic devices.
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Submitted 23 September, 2019;
originally announced September 2019.
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Spin Hall effect in prototype Rashba ferroelectrics GeTe and SnTe
Authors:
H. Wang,
P. Gopal,
S. Picozzi,
S. Curtarolo,
M. Buongiorno Nardelli,
J. Slawinska
Abstract:
Ferroelectric Rashba semiconductors (FERSC) have recently emerged as a promising class of spintronics materials. The peculiar coupling between spin and polar degrees of freedom responsible for several exceptional properties, including ferroelectric switching of Rashba spin texture, suggests that the electron's spin could be controlled by using only electric fields. In this regard, recent experimen…
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Ferroelectric Rashba semiconductors (FERSC) have recently emerged as a promising class of spintronics materials. The peculiar coupling between spin and polar degrees of freedom responsible for several exceptional properties, including ferroelectric switching of Rashba spin texture, suggests that the electron's spin could be controlled by using only electric fields. In this regard, recent experimental studies revealing charge-to-spin interconversion phenomena in two prototypical FERSC, GeTe and SnTe, appear extremely relevant. Here, by employing density functional theory calculations, we investigate spin Hall effect (SHE) in these materials and show that it can be large either in ferroelectric or paraelectric structure. We further explore the compatibility between do** required for the practical realization of SHE in semiconductors and polar distortions which determine Rashba-related phenomena in FERSC, but which could be suppressed by free charge carriers. Based on the analysis of the lone pairs which drive ferroelectricity in these materials, we have found that the polar displacements in GeTe can be sustained up to a critical hole concentration of over $\sim 10^{21}$/cm$^{3}$, while the tiny distortions in SnTe vanish at a minimal level of do**. Finally, we have estimated spin Hall angles for doped structures and demonstrated that the spin Hall effect could be indeed achieved in a polar phase. We believe that the confirmation of spin Hall effect, Rashba spin textures and ferroelectricity coexisting in one material will be helpful for design of novel multifunctional spintronics devices operating without magnetic fields.
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Submitted 9 July, 2019;
originally announced July 2019.
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Possible emergence of a skyrmion phase in ferroelectric GaMo$_4$S$_8$
Authors:
Hui-Min Zhang,
Jun Chen,
Paolo Barone,
Kunihiko Yamauchi,
Shuai Dong,
Silvia Picozzi
Abstract:
Polar lacunar spinels, such as GaV$_4$S$_8$ and GaV$_4$Se$_8$, were proposed to host skyrmion phases under magnetic field. In this work, we put forward, as a candidate for Néel-type skyrmion lattice, the isostructural GaMo$_4$S$_8$, here systematically studied via both first-principles calculations and Monte Carlo simulations of model Hamiltonian. Electric polarization, driven by Jahn-Teller disto…
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Polar lacunar spinels, such as GaV$_4$S$_8$ and GaV$_4$Se$_8$, were proposed to host skyrmion phases under magnetic field. In this work, we put forward, as a candidate for Néel-type skyrmion lattice, the isostructural GaMo$_4$S$_8$, here systematically studied via both first-principles calculations and Monte Carlo simulations of model Hamiltonian. Electric polarization, driven by Jahn-Teller distortion, is predicted to arise in GaMo$_4$S$_8$, showing a comparable size but an opposite sign with respect to that evaluated in V-based counterparts and explained in terms of different electron counting arguments and resulting distortions. Interestingly, a larger spin-orbit coupling of 4d orbitals with respect to 3d orbitals in vanadium-spinels leads to stronger Dzyaloshinskii-Moriya interactions, which are beneficial to stabilize a cycloidal spin texture, as well as smaller-sized skyrmions (radius<10 nm). Furthermore, the possibly large exchange anisotropy of GaMo4S8 may lead to a ferroelectric-ferromagnetic ground state, as an alternative to the ferroelectric-skyrmionic one, calling for further experimental verification.
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Submitted 8 June, 2019;
originally announced June 2019.
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Persistent spin helix in Rashba-Dresselhaus ferroelectric CsBiNb2O7
Authors:
Carmine Autieri,
Paolo Barone,
Jagoda Slawinska,
Silvia Picozzi
Abstract:
Ferroelectric Rashba semiconductors (FERSC) are a novel class of multifunctional materials showing a giant Rashba spin splitting which can be reversed by switching the electric polarization. Although they are excellent candidates as channels in spin field effect transistors, the experimental research has been limited so far to semiconducting GeTe, in which ferroelectric switching is often prevente…
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Ferroelectric Rashba semiconductors (FERSC) are a novel class of multifunctional materials showing a giant Rashba spin splitting which can be reversed by switching the electric polarization. Although they are excellent candidates as channels in spin field effect transistors, the experimental research has been limited so far to semiconducting GeTe, in which ferroelectric switching is often prevented by heavy do** and/or large leakage currents. Here, we report that CsBiNb2O7, a layered perovskite of Dion-Jacobson type, is a robust ferroelectric with sufficiently strong spin-orbit coupling and spin texture reversible by electric field. Moreover, we reveal that its topmost valence band's spin texture is quasi-independent from the momentum, as a result of the low symmetry of its ferroelectric phase. The peculiar spin polarization pattern in the momentum space may yield the so-called "persistent spin helix", a specific spin-wave mode which protects the spin from decoherence in diffusive transport regime, potentially ensuring a very long spin lifetime in this material.
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Submitted 26 July, 2019; v1 submitted 19 May, 2019;
originally announced May 2019.
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Anomalous Hall effect in antiferromagnetic/non-magnetic interfaces
Authors:
Marco Asa,
Carmine Autieri,
Riccardo Pazzocco,
Christian Rinaldi,
Wojciech Brzezicki,
Alessandro Stroppa,
Mario Cuoco,
Silvia Picozzi,
M. Cantoni
Abstract:
We report a combined theoretical and experimental investigation of magnetic proximity and Hall transport in Pt/Cr bilayers. Density functional theory indicates that an interfacial magnetization can be induced in the Pt layer and a strong magnetocrystalline anisotropy with an easy axis out of plane arises in the antiferromagnet. A signal ascribed to the anomalous Hall effect is detected and associa…
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We report a combined theoretical and experimental investigation of magnetic proximity and Hall transport in Pt/Cr bilayers. Density functional theory indicates that an interfacial magnetization can be induced in the Pt layer and a strong magnetocrystalline anisotropy with an easy axis out of plane arises in the antiferromagnet. A signal ascribed to the anomalous Hall effect is detected and associated to the interface between Pt and Cr layers. We show that this effect originates from the combination of proximity-induced magnetization and a nontrivial topology of the band structure at the interface.
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Submitted 6 April, 2019;
originally announced April 2019.
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Rashba spin-splitting in ferroelectric oxides: from rationalizing to engineering
Authors:
Hania Djani,
Andres Camilo Garcia-Castro,
Wen-Yi Tong,
Paolo Barone,
Eric Bousquet,
Silvia Picozzi,
Philippe Ghosez
Abstract:
Ferroelectric Rashba semiconductors (FERSC), in which Rashba spin-splitting can be controlled and reversed by an electric field, have recently emerged as a new class of functional materials useful for spintronic applications. The development of concrete devices based on such materials is, however, still hampered by the lack of robust FERSC compounds. Here, we show that the coexistence of large spo…
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Ferroelectric Rashba semiconductors (FERSC), in which Rashba spin-splitting can be controlled and reversed by an electric field, have recently emerged as a new class of functional materials useful for spintronic applications. The development of concrete devices based on such materials is, however, still hampered by the lack of robust FERSC compounds. Here, we show that the coexistence of large spontaneous polarisation and sizeable spin-orbit coupling is not sufficient to have strong Rashba effects and clarify why simple ferroelectric oxide perovskites with transition metal at the B-site are typically not suitable FERSC candidates. By rationalizing how this limitation can be by-passed through band engineering of the electronic structure in layered perovskites, we identify the Bi$_2$WO$_6$ Aurivillius crystal as the first robust ferroelectric with large and reversible Rashba spin-splitting, that can even be substantially doped without losing its ferroelectric properties. Importantly, we highlight that a unidirectional spin-orbit field arises in layered Bi$_2$WO$_6$, resulting in a protection against spin-decoherence.We highlight moreover that a unidirectional spin-orbit field arises in Bi$_2$WO$_6$, in which the spin-texture is so protected against spin-decoherence.
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Submitted 21 March, 2019; v1 submitted 4 March, 2019;
originally announced March 2019.
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Electronic properties of type-II Weyl semimetal WTe$_2$. A review perspective
Authors:
P. K. Das,
D. Di Sante,
F. Cilento,
C. Bigi,
D. Kopic,
D. Soranzio,
A. Sterzi,
J. A. Krieger,
I. Vobornik,
J. Fujii,
T. Okuda,
V. N. Strocov,
M. B. H. Breese,
F. Parmigiani,
G. Rossi,
S. Picozzi,
R. Thomale,
G. Sangiovanni,
R. J. Cava,
G. Panaccione
Abstract:
Currently, there is a flurry of research interest on materials with an unconventional electronic structure, and we have already seen significant progress in their understanding and engineering towards real-life applications. The interest erupted with the discovery of graphene and topological insulators in the previous decade. The electrons in graphene simulate massless Dirac Fermions with a linear…
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Currently, there is a flurry of research interest on materials with an unconventional electronic structure, and we have already seen significant progress in their understanding and engineering towards real-life applications. The interest erupted with the discovery of graphene and topological insulators in the previous decade. The electrons in graphene simulate massless Dirac Fermions with a linearly dispersing Dirac cone in their band structure, while in topological insulators, the electronic bands wind non-trivially in momentum space giving rise to gapless surface states and bulk bandgap. Weyl semimetals in condensed matter systems are the latest addition to this growing family of topological materials. Weyl Fermions are known in the context of high energy physics since almost the beginning of quantum mechanics. They apparently violate charge conservation rules, displaying the "chiral anomaly", with such remarkable properties recently theoretically predicted and experimentally verified to exist as low energy quasiparticle states in certain condensed matter systems. Not only are these new materials extremely important for our fundamental understanding of quantum phenomena, but also they exhibit completely different transport phenomena. For example, massless Fermions are susceptible to scattering from non-magnetic impurities. Dirac semimetals exhibit non-saturating extremely large magnetoresistance as a consequence of their robust electronic bands being protected by time reversal symmetry. These open up whole new possibilities for materials engineering and applications including quantum computing. In this review, we recapitulate some of the outstanding properties of WTe$_2$, namely, its non-saturating titanic magnetoresistance due to perfect electron and hole carrier balance up to a very high magnetic field observed for the very first time. (Continued. Please see the main article).
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Submitted 18 December, 2018;
originally announced December 2018.
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Berry phase engineering at oxide interfaces
Authors:
D. J. Groenendijk,
C. Autieri,
T. C. van Thiel,
W. Brzezicki,
N. Gauquelin,
P. Barone,
K. H. W. van den Bos,
S. van Aert,
J. Verbeeck,
A. Filippetti,
S. Picozzi,
M. Cuoco,
A. D. Caviglia
Abstract:
Geometric phases in condensed matter play a central role in topological transport phenomena such as the quantum, spin and anomalous Hall effect (AHE). In contrast to the quantum Hall effect - which is characterized by a topological invariant and robust against perturbations - the AHE depends on the Berry curvature of occupied bands at the Fermi level and is therefore highly sensitive to subtle cha…
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Geometric phases in condensed matter play a central role in topological transport phenomena such as the quantum, spin and anomalous Hall effect (AHE). In contrast to the quantum Hall effect - which is characterized by a topological invariant and robust against perturbations - the AHE depends on the Berry curvature of occupied bands at the Fermi level and is therefore highly sensitive to subtle changes in the band structure. A unique platform for its manipulation is provided by transition metal oxide heterostructures, where engineering of emergent electrodynamics becomes possible at atomically sharp interfaces. We demonstrate that the Berry curvature and its corresponding vector potential can be manipulated by interface engineering of the correlated itinerant ferromagnet SrRuO$_3$ (SRO). Measurements of the AHE reveal the presence of two interface-tunable spin-polarized conduction channels. Using theoretical calculations, we show that the tunability of the AHE at SRO interfaces arises from the competition between two topologically non-trivial bands. Our results demonstrate how reconstructions at oxide interfaces can be used to control emergent electrodynamics on a nanometer-scale, opening new routes towards spintronics and topological electronics.
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Submitted 12 October, 2018;
originally announced October 2018.
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Fe/GeTe(111) heterostructures as an avenue towards 'ferroelectric Rashba semiconductors'-based spintronics
Authors:
Jagoda Slawinska,
Domenico Di Sante,
Sara Varotto,
Christian Rinaldi,
Riccardo Bertacco,
Silvia Picozzi
Abstract:
By performing density functional theory (DFT) and Green's functions calculations, complemented by X-ray Photoemission Spectroscopy, we investigate the electronic structure of Fe/GeTe(111), a prototypical ferromagnetic/Rashba-ferroelectric interface. We reveal that such system exhibits several intriguing properties resulting from the complex interplay of exchange interaction, electric polarization…
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By performing density functional theory (DFT) and Green's functions calculations, complemented by X-ray Photoemission Spectroscopy, we investigate the electronic structure of Fe/GeTe(111), a prototypical ferromagnetic/Rashba-ferroelectric interface. We reveal that such system exhibits several intriguing properties resulting from the complex interplay of exchange interaction, electric polarization and spin-orbit coupling. Despite a rather strong interfacial hybridization between Fe and GeTe bands, resulting in a complete suppression of the surface states of the latter, the bulk Rashba bands are hardly altered by the ferromagnetic overlayer. This could have a deep impact on spin dependent phenomena observed at this interface, such as spin-to-charge interconversion, which are likely to involve bulk rather than surface Rashba states.
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Submitted 9 July, 2019; v1 submitted 4 September, 2018;
originally announced September 2018.
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Intrinsic Origin of Enhancement of Ferroelectricity in SnTe Ultrathin Films
Authors:
Kai Liu,
**lian Lu,
Silvia Picozzi,
Laurent Bellaiche,
Hongjun Xiang
Abstract:
Previous studies showed that, as ferroelectric films become thinner, their Curie temperature (Tc) and polarization below Tc both typically decrease. In contrast, a recent experiment [Chang et al., Science 353, 274 (2016)] observed that atomic-thick SnTe films have a higher Tc than their bulk counterpart, which was attributed to extrinsic effects. Here, we find, using first-principles calculations,…
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Previous studies showed that, as ferroelectric films become thinner, their Curie temperature (Tc) and polarization below Tc both typically decrease. In contrast, a recent experiment [Chang et al., Science 353, 274 (2016)] observed that atomic-thick SnTe films have a higher Tc than their bulk counterpart, which was attributed to extrinsic effects. Here, we find, using first-principles calculations, that the 0K energy barrier for the polarization switching (which is a quantity directly related to Tc) is higher in most investigated defect-free SnTe ultrathin films than that in bulk SnTe, and that the 5-unit-cell (UC) SnTe thin film has the largest energy barrier as a result of an interplay between hybridization interactions and Pauli repulsions. Further simulations, employing a presently developed effective Hamiltonian, confirm that free-standing defect-free SnTe thin films have a higher Tc than bulk SnTe, except for the 1-UC case. Our work therefore demonstrates the possibility to intrinsically enhance ferroelectricity of ultrathin films by reducing their thickness.
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Submitted 10 May, 2018;
originally announced May 2018.
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Balanced electron-hole transport in spin-orbit semimetal SrIrO3 heterostructures
Authors:
Nicola Manca,
Dirk J. Groenendijk,
Ilaria Pallecchi,
Carmine Autieri,
Lucas M. K. Tang,
Francesca Telesio,
Giordano Mattoni,
Alix McCollam,
Silvia Picozzi,
Andrea D. Caviglia
Abstract:
Relating the band structure of correlated semimetals to their transport properties is a complex and often open issue. The partial occupation of numerous electron and hole bands can result in properties that are seemingly in contrast with one another, complicating the extraction of the transport coefficients of different bands. The 5d oxide SrIrO3 hosts parabolic bands of heavy holes and light elec…
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Relating the band structure of correlated semimetals to their transport properties is a complex and often open issue. The partial occupation of numerous electron and hole bands can result in properties that are seemingly in contrast with one another, complicating the extraction of the transport coefficients of different bands. The 5d oxide SrIrO3 hosts parabolic bands of heavy holes and light electrons in gapped Dirac cones due to the interplay between electron-electron interactions and spin-orbit coupling. We present a multifold approach relying on different experimental techniques and theoretical calculations to disentangle its complex electronic properties. By combining magnetotransport and thermoelectric measurements in a field-effect geometry with first-principles calculations, we quantitatively determine the transport coefficients of different conduction channels. Despite their different dispersion relationships, electrons and holes are found to have strikingly similar transport coefficients, yielding a holelike response under field-effect and thermoelectric measurements and a linear, electronlike Hall effect up to 33 T.
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Submitted 16 February, 2018; v1 submitted 14 November, 2017;
originally announced November 2017.
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Ferroelectric control of the spin texture in germanium telluride
Authors:
C. Rinaldi,
S. Varotto,
M. Asa,
J. Slawinska,
J. Fujii,
G. Vinai,
S. Cecchi,
R. Calarco,
I. Vobornik,
G. Panaccione,
S. Picozzi,
R. Bertacco
Abstract:
The electrical manipulation of spins in semiconductors, without magnetic fields or auxiliary ferromagnetic materials, represents the holy grail for spintronics. The use of Rashba effect is very attractive because the k-dependent spin-splitting is originated by an electric field. So far only tiny effects in two-dimensional electron gases (2DEG) have been exploited. Recently, GeTe has been predicted…
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The electrical manipulation of spins in semiconductors, without magnetic fields or auxiliary ferromagnetic materials, represents the holy grail for spintronics. The use of Rashba effect is very attractive because the k-dependent spin-splitting is originated by an electric field. So far only tiny effects in two-dimensional electron gases (2DEG) have been exploited. Recently, GeTe has been predicted to have bulk bands with giant Rashba-like splitting, originated by the inversion symmetry breaking due to ferroelectric polarization. In this work, we show that GeTe(111) surfaces with inwards or outwards ferroelectric polarizations display opposite sense of circulation of spin in bulk Rashba bands, as seen by spin and angular resolved photoemission experiments. Our results represent the first experimental demonstration of ferroelectric control of the spin texture in a semiconductor, a fundamental milestone towards the exploitation of the non-volatile electrically switchable spin texture of GeTe in spintronic devices.
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Submitted 21 July, 2017;
originally announced July 2017.
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Role of Square Planar Coordination in the Magnetic Properties of Na4IrO4
Authors:
Xing Ming,
Carmine Autieri,
Kunihiko Yamauchi,
Silvia Picozzi
Abstract:
Iridates supply fertile grounds for unconventional phenomena and exotic electronic phases. With respect to well-studied octahedrally-coordinated iridates, we pay our attention to a rather unexplored iridate, Na4IrO4, showing an unusual square-planar coordination. The latter is key to rationalize the electronic structure and magnetic property of Na4IrO4, which is here explored by first-principles d…
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Iridates supply fertile grounds for unconventional phenomena and exotic electronic phases. With respect to well-studied octahedrally-coordinated iridates, we pay our attention to a rather unexplored iridate, Na4IrO4, showing an unusual square-planar coordination. The latter is key to rationalize the electronic structure and magnetic property of Na4IrO4, which is here explored by first-principles density functional theory and Monte Carlo simulations. Due to the uncommon square-planar crystal field, Ir 5d states adopt intermediate-spin state with double occupation of dz2 orbital, leading to a sizable local spin moment, at variance with many other iridates. The square-planar crystal field splitting is also crucial in opening a robust insulating gap in Na4IrO4, irrespective of the specific magnetic ordering or treatment of electronic correlations. Spin-orbit coupling plays a minor role in sha** the electronic structure, but leads to a strong magnetocrystalline anisotropy. The easy axis perpendicular to the IrO4 plaquette, well explained using perturbation theory, is again closely related to the square-planar coordination. Finally, the large single-ion anisotropy suppresses the spin frustration and stabilizes a collinear antiferromagnetic long-range magnetic ordering, as confirmed by Monte Carlo simulations predicting a quite low Néel temperature, expected from almost isolated IrO4 square-planar units as crystalline building blocks.
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Submitted 13 July, 2017;
originally announced July 2017.
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The role of spin-orbit coupling in the electronic structure of IrO$_2$
Authors:
Pranab Kumar Das,
Jagoda Sławińska,
Ivana Vobornik,
Jun Fujii,
Anna Regoutz,
Juhan M. Kahk,
David O. Scanlon,
Benjamin J. Morgan,
Cormac McGuinness,
Evegeny Plekhanov,
Domenico Di Sante,
Ying-Sheng Huang,
Ruei-San Chen,
Giorgio Rossi,
Silvia Picozzi,
William R. Branford,
Giancarlo Panaccione,
David J. Payne
Abstract:
The delicate interplay of electronic charge, spin, and orbital degrees of freedom is in the heart of many novel phenomena across the transition metal oxide family. Here, by combining high- resolution angle resolved photoemission spectroscopy and first principles calculations (with and without spin-orbit coupling), the electronic structure of the rutile binary iridate, IrO$_2$ is investigated. The…
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The delicate interplay of electronic charge, spin, and orbital degrees of freedom is in the heart of many novel phenomena across the transition metal oxide family. Here, by combining high- resolution angle resolved photoemission spectroscopy and first principles calculations (with and without spin-orbit coupling), the electronic structure of the rutile binary iridate, IrO$_2$ is investigated. The detailed study of electronic bands measured on a high-quality single crystalline sample, and use of a wide range of photon energy provide a huge improvement over the previous studies. The excellent agreement between theory and experimental results shows that the single-particle DFT description of IrO$_2$ band structure is adequate, without the need of invoking any treatment of correlation effects. Although many observed features point to a 3D nature of the electronic structure, clear surface effects are revealed. The discussion of the orbital character of the relevant bands crossing the Fermi level sheds light on spin orbit coupling-driven phenomena in this material, unveiling a spin-orbit induced avoided crossing, a property likely to play key role in its large spin Hall effect.
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Submitted 28 January, 2018; v1 submitted 5 July, 2017;
originally announced July 2017.
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Spin-orbit semimetal SrIrO$_3$ in the two-dimensional limit
Authors:
D. J. Groenendijk,
C. Autieri,
J. Girovsky,
M. Carmen Martinez-Velarte,
N. Manca,
G. Mattoni,
A. M. R. V. L. Monteiro,
N. Gauquelin,
J. Verbeeck,
A. F. Otte,
M. Gabay,
S. Picozzi,
A. D. Caviglia
Abstract:
We investigate the thickness-dependent electronic structure of ultrathin SrIrO$_3$ and discover a transition from a semimetallic to a correlated insulating state below 4 unit cells. Low-temperature magnetoconductance measurements show that spin fluctuations in the semimetallic state are significantly enhanced while approaching the transition point. The electronic structure is further studied by sc…
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We investigate the thickness-dependent electronic structure of ultrathin SrIrO$_3$ and discover a transition from a semimetallic to a correlated insulating state below 4 unit cells. Low-temperature magnetoconductance measurements show that spin fluctuations in the semimetallic state are significantly enhanced while approaching the transition point. The electronic structure is further studied by scanning tunneling spectroscopy, showing that 4 unit cells SrIrO$_3$ is on the verge of a gap opening. Our density functional theory calculations reproduce the critical thickness of the transition and show that the opening of a gap in ultrathin SrIrO$_3$ is accompanied by antiferromagnetic order.
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Submitted 27 June, 2017;
originally announced June 2017.
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Three-Dimensional Electronic Structure of type-II Weyl Semimetal WTe$_2$
Authors:
Domenico Di Sante,
Pranab Kumar Das,
C. Bigi,
Z. Ergönenc,
N. Gürtler,
J. A. Krieger,
T. Schmitt,
M. N. Ali,
G. Rossi,
R. Thomale,
C. Franchini,
S. Picozzi,
J. Fujii,
V. N. Strocov,
G. Sangiovanni,
I. Vobornik,
R. J. Cava,
G. Panaccione
Abstract:
By combining bulk sensitive soft-X-ray angular-resolved photoemission spectroscopy and accurate first-principles calculations we explored the bulk electronic properties of WTe$_2$, a candidate type-II Weyl semimetal featuring a large non-saturating magnetoresistance. Despite the layered geometry suggesting a two-dimensional electronic structure, we find a three-dimensional electronic dispersion. W…
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By combining bulk sensitive soft-X-ray angular-resolved photoemission spectroscopy and accurate first-principles calculations we explored the bulk electronic properties of WTe$_2$, a candidate type-II Weyl semimetal featuring a large non-saturating magnetoresistance. Despite the layered geometry suggesting a two-dimensional electronic structure, we find a three-dimensional electronic dispersion. We report an evident band dispersion in the reciprocal direction perpendicular to the layers, implying that electrons can also travel coherently when crossing from one layer to the other. The measured Fermi surface is characterized by two well-separated electron and hole pockets at either side of the $Γ$ point, differently from previous more surface sensitive ARPES experiments that additionally found a significant quasiparticle weight at the zone center. Moreover, we observe a significant sensitivity of the bulk electronic structure of WTe$_2$ around the Fermi level to electronic correlations and renormalizations due to self-energy effects, previously neglected in first-principles descriptions.
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Submitted 17 February, 2017;
originally announced February 2017.
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Metal-Insulator Transition and Jeff = 1/2 Spin-Orbit Insulating State in Rutile-based IrO2/TiO2 Superlattices
Authors:
Xing Ming,
Kunihiko Yamauchi,
Tamio Oguchi,
Silvia Picozzi
Abstract:
By combining 5d transition-metal oxides showing pronounced spin-orbit interactions and oxide-based heterostructures, we propose rutile-based IrO2/TiO2 superlattices as promising candidates for unconventional electronic properties. By means of density-functional-theory simulations complemented with Hubbard-like corrections, we focus on the evolution of the electronic structure as a function of the…
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By combining 5d transition-metal oxides showing pronounced spin-orbit interactions and oxide-based heterostructures, we propose rutile-based IrO2/TiO2 superlattices as promising candidates for unconventional electronic properties. By means of density-functional-theory simulations complemented with Hubbard-like corrections, we focus on the evolution of the electronic structure as a function of the IrO2 layer thickness and predict the heterostructures to exhibit a thickness-controlled metal-to-insulator transition, crucially related to the connectivity among IrO6 octahedra. The subtle interplay between electron correlation and spin-orbit coupling leads to an almost pure Jeff = 1/2 spin-orbit insulating state at the level of atomically-thin IrO2 monolayer with almost isolated IrO6 octahedra, leading to a predicted emerging state awaiting for experimental confirmation.
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Submitted 14 February, 2017;
originally announced February 2017.
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Magneto-electric coupling in type-I multiferroic ScFeO$_3$
Authors:
Gianluca Giovannetti,
Danilo Puggioni,
Paolo Barone,
Silvia Picozzi,
James Rondinelli,
Massimo Capone
Abstract:
We investigate the electronic structure and the ferroelectric properties of the recently discovered multiferroic ScFeO$_3$ by means of ab-initio calculations. The $3d$ manifold of Fe in the half-filled configuration naturally favors an antiferromagnetic ordering, with a theoretical estimate of the antiferromagnetic Néel temperature in good agreement with the experimental values. We find that the i…
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We investigate the electronic structure and the ferroelectric properties of the recently discovered multiferroic ScFeO$_3$ by means of ab-initio calculations. The $3d$ manifold of Fe in the half-filled configuration naturally favors an antiferromagnetic ordering, with a theoretical estimate of the antiferromagnetic Néel temperature in good agreement with the experimental values. We find that the inversion symmetry-breaking is driven by the off-centering of Sc atoms, which results in a large ferroelectric polarization of $\sim$105\,$μ$C/cm$^{2}$. Surprisingly the ferroelectric polarization is sensitive to the local magnetization of the Fe atoms resulting in a large negative magnetoelectric interaction. This behavior is unexpected in type-I multiferroic materials because the magnetic and ferroelectric orders are of different origins.
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Submitted 6 November, 2016;
originally announced November 2016.
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Topological Phase Transition Coupled with Spin-Valley Physics in Ferroelectric Oxide Heterostructures
Authors:
Kunihiko Yamauchi,
Paolo Barone,
Silvia Picozzi
Abstract:
The possibility to engineer the coupling of spin and valley physics is explored in ferroelectric oxide heterostructures with eg electronic configuration. We show that the polar structural distortion induces the appearance of spin-valley coupled properties, at the same time being responsible for a topological transition from a quantum spin-Hall insulating phase to a trivial band insulator. The coup…
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The possibility to engineer the coupling of spin and valley physics is explored in ferroelectric oxide heterostructures with eg electronic configuration. We show that the polar structural distortion induces the appearance of spin-valley coupled properties, at the same time being responsible for a topological transition from a quantum spin-Hall insulating phase to a trivial band insulator. The coupled spin-valley physics is affected by the topological band inversion in a non-trivial way; while the valley-dependent spin polarization of both conduction and valence bands is preserved, a change of the Berry curvature and of spin-valley selection rules is predicted, leading to different circular dichroic response as well as valley and spin Hall effects.
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Submitted 13 October, 2016;
originally announced October 2016.
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Possibility of Combining Ferroelectricity and Rashba-like spin splitting in Monolayers of 1T-type Transition-Metal Dichalcogenides MX2
Authors:
Emilie Bruyer,
Domenico Di Sante,
Paolo Barone,
Alessandro Stroppa,
Myung-Hwan Whangbo,
Silvia Picozzi
Abstract:
First-principles calculations were carried out to explore the possible coupling between spin-polarized electronic states and ferroelectric polarization in monolayers of transition-metal dichalcogenides MX 2 (M = Mo, W; X = S, Se, Te) with distorted octahedrally coordinated 1T structures.For d^2 metal ions, two competing metal clustering effects can take place, where metal ions are arranged in trim…
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First-principles calculations were carried out to explore the possible coupling between spin-polarized electronic states and ferroelectric polarization in monolayers of transition-metal dichalcogenides MX 2 (M = Mo, W; X = S, Se, Te) with distorted octahedrally coordinated 1T structures.For d^2 metal ions, two competing metal clustering effects can take place, where metal ions are arranged in trimers or zigzag chains. Among these, the former structural distortion comes along with an improper ferroelectric phase which persists in the monolayer limit. Switchable Rashba-like spin-polarization features are predicted in the trimerized polytype, which can be permanently tuned by acting on its ferroelectric properties. The polar trimerized structure is found to be stable for 1T-MoS 2 only, while the nonpolar polytype with zigzag metal clustering is predicted to stabilize for other transition-metal dichalcogenides with d 2 metal ions.
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Submitted 2 October, 2016;
originally announced October 2016.
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Rashba-Dresselhaus spin-splitting in the bulk ferroelectric oxide BiAlO$_3$
Authors:
Luiz Gustavo Davanse da Silveira,
Paolo Barone,
Silvia Picozzi
Abstract:
It has been recently suggested that the coexistence of ferroelectricity and Rashba-like spin-splitting effects due to spin-orbit coupling in a single material may allow for a non-volatile electric control of spin degrees of freedom. In the present work, we compared the structural and ferroelectric properties of tetragonal and rhombohedral phases of ferroelectric BiAlO$_3$ by means of density-funct…
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It has been recently suggested that the coexistence of ferroelectricity and Rashba-like spin-splitting effects due to spin-orbit coupling in a single material may allow for a non-volatile electric control of spin degrees of freedom. In the present work, we compared the structural and ferroelectric properties of tetragonal and rhombohedral phases of ferroelectric BiAlO$_3$ by means of density-functional calculations. In both phases, we carefully investigated Rashba and Dresselhaus effects, giving rise to spin-splitting in their bulk electronic structure, particularly near the conduction band minimum, supplementing our first-principles results with an effective $ k\cdot p$ model analysis. The full reversal of the spin texture with ferroelectric polarization switching was also predicted. BiAlO$_3$ can therefore be considered as the first known oxide to exhibit a coexistence of ferroelectricity and Rashba-Dresselhaus effects.
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Submitted 11 July, 2016; v1 submitted 23 June, 2016;
originally announced June 2016.
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Intertwined Rashba, Dirac and Weyl Fermions in Hexagonal Hyperferroelectrics
Authors:
Domenico Di Sante,
Paolo Barone,
Alessandro Stroppa,
Kevin F. Garrity,
David Vanderbilt,
Silvia Picozzi
Abstract:
By means of density functional theory based calculations, we study the role of spin-orbit coupling in the new family of ABC hyperferroelectrics [Phys. Rev. Lett. 112, 127601 (2014)]. We unveil an extremely rich physics strongly linked to ferroelectric properties, ranging from the electric control of bulk Rashba effect to the existence of a three dimensional topological insulator phase, with concom…
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By means of density functional theory based calculations, we study the role of spin-orbit coupling in the new family of ABC hyperferroelectrics [Phys. Rev. Lett. 112, 127601 (2014)]. We unveil an extremely rich physics strongly linked to ferroelectric properties, ranging from the electric control of bulk Rashba effect to the existence of a three dimensional topological insulator phase, with concomitant topological surface states even in the ultrathin film limit. Moreover, we predict that the topological transition, as induced by alloying, is followed by a Weyl semi-metal phase of finite concentration extension, which is robust against disorder, putting forward hyperferroelectrics as promising candidates for spin-orbitronic applications.
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Submitted 14 January, 2016;
originally announced January 2016.
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Role of Polar Phonons in the Photo Excited State of Metal Halide Perovskites
Authors:
Menno Bokdam,
Tobias Sander,
Alessandro Stroppa,
Silvia Picozzi,
D. D. Sarma,
Cesare Franchini,
Georg Kresse
Abstract:
The development of high efficiency perovskite solar cells has sparked a multitude of measurements on the optical properties of these materials. For the most studied methylammonium(MA)PbI$_3$ perovskite, a large range (6-55 meV) of exciton binding energies has been reported by various experiments. The existence of excitons at room temperature is unclear. For the MAPb$X_3$ perovskites we report on r…
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The development of high efficiency perovskite solar cells has sparked a multitude of measurements on the optical properties of these materials. For the most studied methylammonium(MA)PbI$_3$ perovskite, a large range (6-55 meV) of exciton binding energies has been reported by various experiments. The existence of excitons at room temperature is unclear. For the MAPb$X_3$ perovskites we report on relativistic $GW$-BSE calculations. This method is capable to directly calculate excitonic properties from first-principles. At low temperatures it predicts exciton binding energies in agreement with the reported 'large' values. For MAPbI$_3$, phonon modes present in this frequency range have a negligible contribution to the ionic screening. By calculating the polarisation in time from finite temperature molecular dynamics, we show that at room temperature this does not change. We therefore exclude ionic screening as an explanation for the experimentally observed reduction of the exciton binding energy at room temperature.
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Submitted 29 June, 2016; v1 submitted 17 December, 2015;
originally announced December 2015.
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Analogy between Jahn-Teller distortion and Rashba spin splitting, and Jahn-Teller counterpart of spin texture
Authors:
Alessandro Stroppa,
Paolo Barone,
Domenico Di Sante,
Mario Cuoco,
Silvia Picozzi,
Myung-Hwan Whangbo
Abstract:
In develo** physical theories analogical reasoning has been found to be very powerful, as attested by a number of important historical examples. An analogy between two apparently different phenomena, once established, allows one to transfer information and bring new concepts from one phenomenon to the other. Here we discuss an important analogy between two widely different physical problems, nam…
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In develo** physical theories analogical reasoning has been found to be very powerful, as attested by a number of important historical examples. An analogy between two apparently different phenomena, once established, allows one to transfer information and bring new concepts from one phenomenon to the other. Here we discuss an important analogy between two widely different physical problems, namely, the Jahn-Teller distortion in molecular physics and the Rashba spin splitting in condensed matter physics. By exploring their conceptual and mathematical features and by searching for the counterparts between them, we examine the orbital texture in Jahn-Teller systems, as the counterpart of the spin texture of the Rashba physics, and put forward a possible way of experimentally detecting the orbital texture. Finally, we discuss the analogy by comparing the coexistence of linear Rashba+Dresselhaus effects and Jahn-Teller problems for specific symmetries, which allow for non-trivial spin and orbital textures, respectively.
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Submitted 12 October, 2015; v1 submitted 11 September, 2015;
originally announced September 2015.
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Jahn-Teller distortions as a novel source of multiferroicity
Authors:
Paolo Barone,
Kunihiko Yamauchi,
Silvia Picozzi
Abstract:
The Jahn-Teller effect is a fascinating and ubiquitous phenomenon in modern quantum physics and chemistry. We propose a class of oxides with melilite structure Ba$_2$TGe$_2$O$_7$ (T=V,Ni) where Jahn-Teller distortions are the main responsibles for the appearance of electric polarization. At the hearth of the proposed mechanism lies the lack of inversion symmetry displayed by tetrahedrally coordina…
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The Jahn-Teller effect is a fascinating and ubiquitous phenomenon in modern quantum physics and chemistry. We propose a class of oxides with melilite structure Ba$_2$TGe$_2$O$_7$ (T=V,Ni) where Jahn-Teller distortions are the main responsibles for the appearance of electric polarization. At the hearth of the proposed mechanism lies the lack of inversion symmetry displayed by tetrahedrally coordinated transition-metal ions, which allows for the condensation of polar Jahn-Teller distortions, at odds with octahedral coordination typical of conventional ferroelectric oxides with perovskite structure. Since the noncentrosymmetric local environment of transition-metal ions also activates the proposed spin-dependent hybridization mechanism for magnetically-induced electric polarization, proper multiferroic phases with intrinsic magnetoelectric interaction could be realized in this class of low-symmetry materials.
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Submitted 10 July, 2015;
originally announced July 2015.
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Anisotropic interactions opposing magnetocrystalline anisotropy in Sr$_3$NiIrO$_6$
Authors:
E. Lefrançois,
A. -M. Pradipto,
M. Moretti Sala,
L. C. Chapon,
V. Simonet,
S. Picozzi,
P. Lejay,
S. Petit,
R. Ballou
Abstract:
We report our investigation of the electronic and magnetic excitations of Sr$_3$NiIrO$_6$ by resonant inelastic x-ray scattering at the Ir L$_3$ edge. The intra-$t_{2g}$ electronic transitions are analyzed using an atomic model, including spin-orbit coupling and trigonal distortion of the IrO$_6$ octahedron, confronted to {\it ab initio} quantum chemistry calculations. The Ir spin-orbital entangle…
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We report our investigation of the electronic and magnetic excitations of Sr$_3$NiIrO$_6$ by resonant inelastic x-ray scattering at the Ir L$_3$ edge. The intra-$t_{2g}$ electronic transitions are analyzed using an atomic model, including spin-orbit coupling and trigonal distortion of the IrO$_6$ octahedron, confronted to {\it ab initio} quantum chemistry calculations. The Ir spin-orbital entanglement is quantified and its implication on the magnetic properties, in particular in inducing highly anisotropic magnetic interactions, is highlighted. These are included in the spin-wave model proposed to account for the dispersionless magnetic excitation that we observe at 90 meV. By counterbalancing the strong Ni$^{2+}$ easy-plane anisotropy that manifests itself at high temperature, the anisotropy of the interactions finally leads to the remarkable easy-axis magnetism reported in this material at low temperature.
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Submitted 13 April, 2016; v1 submitted 21 April, 2015;
originally announced April 2015.
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Coupling ferroelectricity with spin-valley physics in oxide-based heterostructure
Authors:
Kunihiko Yamauchi,
Paolo Barone,
Tatsuya Shishidou,
Tamio Oguchi,
Silvia Picozzi
Abstract:
The coupling of spin and valley physics is nowadays regarded as a promising route toward next-generation spintronic and valleytronic devices. In the aim of engineering functional properties for valleytronic applications, we focus on the ferroelectric heterostructure BiAlO3/BiIrO3, where the complex interplay among trigonal crystal field, layer degrees of freedom and spin-orbit coupling mediates a…
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The coupling of spin and valley physics is nowadays regarded as a promising route toward next-generation spintronic and valleytronic devices. In the aim of engineering functional properties for valleytronic applications, we focus on the ferroelectric heterostructure BiAlO3/BiIrO3, where the complex interplay among trigonal crystal field, layer degrees of freedom and spin-orbit coupling mediates a strong spin-valley coupling. Furthermore, we show that ferroelectricity provides a non-volatile handle to manipulate and switch the emerging valley-contrasting spin polarization.
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Submitted 15 April, 2015;
originally announced April 2015.
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A combined first-principles and thermodynamic approach to M-Nitronyl Nitroxide (M=Co, Mn) spin helices
Authors:
Marco Scarrozza,
Alessandro Vindigni,
Paolo Barone,
Roberta Sessoli,
Silvia Picozzi
Abstract:
The properties of two molecular-based magnetic helices, composed of 3$d$ metal Co and Mn ions bridged by Nitronyl Nitroxide radicals, are investigated by density functional calculations. Their peculiar and distinctive magnetic behavior is here elucidated by a thorough description of their magnetic, electronic, and anisotropy properties. Metal ions are antiferromagnetically coupled with the radical…
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The properties of two molecular-based magnetic helices, composed of 3$d$ metal Co and Mn ions bridged by Nitronyl Nitroxide radicals, are investigated by density functional calculations. Their peculiar and distinctive magnetic behavior is here elucidated by a thorough description of their magnetic, electronic, and anisotropy properties. Metal ions are antiferromagnetically coupled with the radicals, leading to a ferrimagnetically ordered ground state. A strong metal-radical exchange coupling is found, about 44 meV and 48 meV for Co- and Mn-helices, respectively. The latter have also relevant next-nearest-neighbor Mn-Mn antiferromagnetic interactions (of $\sim$ 6 meV). Co-sites are characterized by non-collinear uniaxial anisotropies, whereas Mn-sites are rather isotropic. A key result pertains to the Co-helix: the microscopic picture resulting from density-functional calculations allows us to propose a spin Hamiltonian of increased complexity with respect to the commonly employed Ising Hamiltonian, suitable for the study of finite-temperature behavior, and that seems to clarify the puzzling scenario of multiple characteristic energy scales observed in experiments.
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Submitted 1 March, 2015;
originally announced March 2015.