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Creation, Control, and Modeling of NV Centers in Nanodiamonds
Authors:
Pietro Aprà,
Nour Hanne Amine,
Adam Britel,
Sofia Sturari,
Veronica Varzi,
Matteo Ziino,
Lorenzo Mino,
Paolo Olivero,
Federico Picollo
Abstract:
Sensing based on Nitrogen-Vacancy (NV) centers in nanodiamonds (NDs) offers significant potential across various applications. However, optimizing their quantum-optical properties remains challenging. This study focuses on enhancing and controlling the optical properties of NV centers in NDs through surface chemistry tuning and proton beam irradiation. Systematic thermal oxidations were performed…
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Sensing based on Nitrogen-Vacancy (NV) centers in nanodiamonds (NDs) offers significant potential across various applications. However, optimizing their quantum-optical properties remains challenging. This study focuses on enhancing and controlling the optical properties of NV centers in NDs through surface chemistry tuning and proton beam irradiation. Systematic thermal oxidations were performed to investigate the evolution of surface chemical groups using IR spectroscopy and their influence on optical properties using photoluminescence spectroscopy and PL decay measurements. Proton irradiation was explored over a wide range of fluences (10^14 to 10^17 cm^-2) to precisely control the NV center concentration, identifying conditions that maximize creation and emission intensity. Furthermore, NV center charge state control was achieved by analyzing the NV-/NV0 ratio with varying surface terminations and NV center concentrations. A novel predictive mathematical model was developed to evaluate the efficiencies of forming NV- and NV0. Although tested specifically with proton-irradiated NDs, this model has broad applicability, representing a significant advancement in predicting the outcomes of ion-beam-based color center generation in diamond.
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Submitted 1 July, 2024;
originally announced July 2024.
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Bessel beam fabrication of graphitic micro electrodes in diamond using laser bursts
Authors:
Akhil Kuriakose,
Francesco P. Mezzapesa,
Caterina Gaudiuso,
Andrea Chiappini,
Federico Picollo,
Antonio Ancona,
Ottavia Jedrkiewicz
Abstract:
We present the fabrication of conductive graphitic microelectrodes in diamond by using pulsed Bessel beams in the burst mode laser writing regime. The graphitic wires are created in the bulk of a 500 μm thick monocrystalline HPHT diamond (with (100) orientation) perpendicular to the sample surface, without beam scanning or sample translation. In particular, the role of different burst features in…
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We present the fabrication of conductive graphitic microelectrodes in diamond by using pulsed Bessel beams in the burst mode laser writing regime. The graphitic wires are created in the bulk of a 500 μm thick monocrystalline HPHT diamond (with (100) orientation) perpendicular to the sample surface, without beam scanning or sample translation. In particular, the role of different burst features in the resistivity of such electrodes is investigated for two very different sub-pulse durations namely 200 fs and 10 ps, together with the role of thermal annealing. Micro-Raman spectroscopy is implemented to investigate the laser-induced crystalline modification, and the results obtained by using two different laser repetition rates, namely 20 Hz and 200 kHz, are compared. A comparison of the micro-Raman spectra and of the resistivity of the electrodes fabricated respectively with 10 ps single pulses and with bursts (of sub-pulses) of similar total duration has also been made, and we show that the burst mode writing regime allows to fabricate more conductive micro electrodes, thanks to the heat accumulation process leading to stronger graphitization. Moreover, the microfabrication of diamond by means of the longest available bursts (~ 46.7 ps duration) featured by 32 sub-pulses of 200 fs duration, with intra-burst time delay of 1.5 ps (sub-THz bursts), leads to graphitic wires with the lowest resistivity values obtained in this work, especially at low repetition rate such as 20 Hz. Indeed, micro electrodes with resistivity on the order of 0.01 Ω cm can be fabricated by Bessel beams in the burst mode regime even when the bursts are constituted by femtosecond laser sub-pulses, in contrast with the results of the standard writing regime with single fs pulses typically leading to less conductive micro electrodes.
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Submitted 3 June, 2024;
originally announced June 2024.
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3D Printing in Microfluidics: Experimental Optimization of Droplet Size and Generation Time through Flow Focusing, Phase, and Geometry Variation
Authors:
Adam Britel,
Giulia Tomagra,
Pietro Aprà,
Veronica Varzi,
Sofia Sturari,
Nour-hanne Amine,
Paolo Olivero,
Federico Picollo
Abstract:
Droplet-based microfluidics systems have become widely used in recent years thanks to their advantages, varying from the possibility of handling small fluid volumes to directly synthesizing and encapsulating various living forms for biological-related applications. The effectiveness of such systems mainly depends on the ability to control some of these system's parameters, such as produced droplet…
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Droplet-based microfluidics systems have become widely used in recent years thanks to their advantages, varying from the possibility of handling small fluid volumes to directly synthesizing and encapsulating various living forms for biological-related applications. The effectiveness of such systems mainly depends on the ability to control some of these system's parameters, such as produced droplet size and formation time, which represents a challenging task. This work reports an experimental study on tuning droplet size and generation time in a flow-focusing geometry fabricated with stereolithography 3D printing by exploring the interplay of phase and geometrical parameters. We produced droplets at different low flow rates of continuous and dispersed phases to assess the effect of each of these phases on the droplets' size and formation time. We observed that smaller droplets were produced for high viscosity oil and water phase, along with high flow rates. In addition, changing the microfluidics channels' width, and morphology of the orifice has shown a similar effect on droplet size, as shown in the case of high-viscosity solutions. The variation of the bifurcation angle shows a noticeable variation in terms of the achieved droplet size and formation time. We further investigated the impact of modifying the width ratio of the continuous and dispersed phases on droplet formation
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Submitted 27 February, 2024;
originally announced February 2024.
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A comprehensive study of the effect of thermally induced surface terminations on nanodiamonds electrical properties
Authors:
Sofia Sturari,
Veronica Varzi,
Pietro Aprà,
Adam Britel,
Nour-Hanne Amine,
Greta Andrini,
Emilio Corte,
Giulia Tomagra,
Lorenzo Mino,
Paolo Olivero,
Federico Picollo
Abstract:
Nanodiamonds (NDs) gained increasing attention in multiple research areas due to the possibility of tuning their physical and chemical features by functionalizing their surface. This has a crucial impact on their electrical properties, which are essential in applications such as the development of innovative sensors and in the biomedical field. The great interest in electrical conduction in NDs ha…
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Nanodiamonds (NDs) gained increasing attention in multiple research areas due to the possibility of tuning their physical and chemical features by functionalizing their surface. This has a crucial impact on their electrical properties, which are essential in applications such as the development of innovative sensors and in the biomedical field. The great interest in electrical conduction in NDs has driven the scientific community to its extensive investigation. The role of various functionalities has been considered and different conduction mechanisms have been proposed. In this work, we reported on a systematic study of the modification of the electrical properties of differently sized NDs, as a function of different thermal treatments in air, hydrogen or inert atmosphere. Samples were electrically characterized in controlled humidity conditions to consider the influence of water on conductivity. NDs electrical properties were interpreted in connection with their surface chemistry and structural features, probed with infrared and Raman spectroscopies. The presence of surface graphite, hydrogen terminations or water adsorbed on hydrophilic oxygen-containing functional groups rendered NDs more conductive. These moieties indeed enabled different conduction mechanisms, which were respectively graphite-mediated conduction, water-induced transfer do** and Grotthus mechanism in surface-adsorbed water. The effect of particles size on conductivity has also been evaluated and discussed. Our experimental findings shed light on the link between surface modifications and electrical properties of NDs, providing at the same time an interpretative key to understanding the effect of particles dimensions.
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Submitted 19 December, 2023;
originally announced December 2023.
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Enhancing the Study of Quantal Exocytotic Events: Combining Diamond Multi-Electrode Arrays with Amperometric PEak Analysis (APE) an Automated Analysis Code
Authors:
Giulia Tomagra,
Alice Re,
Veronica Varzi,
Pietro Aprà,
Adam Britel,
Claudio Franchino,
Sofia Sturari,
Nour-Hanne Amine,
Remco H. S. Westerink,
Valentina Carabelli,
Federico Picollo
Abstract:
MicroGraphited-Diamond-Multi Electrode Arrays (μG-D-MEAs) can be successfully used to reveal, in real time, quantal exocytotic events occurring from many individual neurosecretory cells and/or from many neurons within a network. As μG-D-MEAs arrays are patterned with up to 16 sensing microelectrodes, each of them recording large amounts of data revealing the exocytotic activity, the aim of this wo…
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MicroGraphited-Diamond-Multi Electrode Arrays (μG-D-MEAs) can be successfully used to reveal, in real time, quantal exocytotic events occurring from many individual neurosecretory cells and/or from many neurons within a network. As μG-D-MEAs arrays are patterned with up to 16 sensing microelectrodes, each of them recording large amounts of data revealing the exocytotic activity, the aim of this work was to support an adequate analysis code to speed up the signal detection. The cutting-edge technology of microGraphited-Diamond-Multi Electrode Arrays (μG-D-MEAs) has been implemented with an automated analysis code (APE, Amperometric Peak Analysis) developed using Matlab R2022a software to provide easy and accurate detection of amperometric spike parameters, including the analysis of the pre-spike foot that sometimes precedes the complete fusion pore dilatation. Data have been acquired from cultured PC12 cells, either collecting events during spontaneous exocytosis or after L-DOPA incubation. Validation of the APE code was performed by comparing the acquired spike parameters with those obtained using Quanta Analysis (Igor macro) by Mosharov et al.
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Submitted 19 December, 2023;
originally announced December 2023.
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Nanodiamond quantum sensors reveal temperature variation associated to hippocampal neurons firing
Authors:
G. Petrini,
G. Tomagra,
E. Bernardi,
E. Moreva,
P. Traina,
A. Marcantoni,
F. Picollo,
K. Kvakova,
P. Cigler,
I. P. Degiovanni,
V. Carabelli,
M. Genovese
Abstract:
Temperature is one of the most relevant parameters for the regulation of intracellular processes. Measuring localized subcellular temperature gradients is fundamental for a deeper understanding of cell function, such as the genesis of action potentials, and cell metabolism. Here, we detect for the first time temperature variations (1°C) associated with potentiation and depletion of neuronal firing…
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Temperature is one of the most relevant parameters for the regulation of intracellular processes. Measuring localized subcellular temperature gradients is fundamental for a deeper understanding of cell function, such as the genesis of action potentials, and cell metabolism. Here, we detect for the first time temperature variations (1°C) associated with potentiation and depletion of neuronal firing, exploiting a nanoscale thermometer based on optically detected magnetic resonance in nanodiamonds. Our results provide a tool for assessing neuronal spiking activity under physiological and pathological conditions and, conjugated with the high sensitivity of this technique (in perspective sensitive to < 0.1°C variations), pave the way to a systematic study of the generation of localized temperature gradients. Furthermore, they prompt further studies explaining in detail the physiological mechanism originating this effect.
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Submitted 31 March, 2022;
originally announced April 2022.
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Experimental and numerical study of the effect of surface patterning on the frictional properties of polymer surfaces
Authors:
Simone Balestra,
Gianluca Costagliola,
Amedeo Pegoraro,
Federico Picollo,
Jean-François Molinari,
Nicola M. Pugno,
Ettore Vittone,
Federico Bosia,
Agusti Sin
Abstract:
We describe benchmark experiments to evaluate the frictional properties of laser patterned low-density polyethylene as a function of sliding velocity, normal force and humidity. The pattern is a square lattice of square cavities with sub-mm spacing. We find that dynamic friction decreases compared to non-patterned surfaces, since stress concentrations lead to anticipated detachment, and that stick…
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We describe benchmark experiments to evaluate the frictional properties of laser patterned low-density polyethylene as a function of sliding velocity, normal force and humidity. The pattern is a square lattice of square cavities with sub-mm spacing. We find that dynamic friction decreases compared to non-patterned surfaces, since stress concentrations lead to anticipated detachment, and that stick-slip behavior is also affected. Friction increases with humidity, and the onset of stick-slip events occurs in the high humidity regime. Experimental results are compared with numerical simulations of a simplified 2-D spring-block model. A good qualitative agreement can be obtained by introducing a deviation from the linear behavior of the Amontons-Coulomb law with the load, due to a saturation in the effective contact area with pressure. This also leads also to the improvement of the quantitative results of the spring-block model by reducing the discrepancy with the experimental results, indicating the robustness of the adopted simplified approach, which could be adopted to design patterned surfaces with controlled friction properties.
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Submitted 22 October, 2021;
originally announced October 2021.
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Photoconversion of shallow nitrogen-vacancy centers in flat and nanostructured diamond under high-power laser irradiation
Authors:
Federico Gorrini,
Carla Dorigoni,
Domingo Olivares-Postigo,
Rakshyakar Giri,
Pietro Aprà,
Federico Picollo,
Angelo Bifone
Abstract:
Shallow, negatively-charged Nitrogen-Vacancy centers (NV-) in diamond have been proposed for high-sensitivity magnetometry and spin-polarization transfer applications. However, surface effects tend to favor and stabilize the less useful neutral form, the NV0 centers. Here, we report the effects of green laser irradiation on ensembles of nanometer-shallow NV centers in flat and nanostructured diamo…
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Shallow, negatively-charged Nitrogen-Vacancy centers (NV-) in diamond have been proposed for high-sensitivity magnetometry and spin-polarization transfer applications. However, surface effects tend to favor and stabilize the less useful neutral form, the NV0 centers. Here, we report the effects of green laser irradiation on ensembles of nanometer-shallow NV centers in flat and nanostructured diamond surfaces as a function of laser power in a range not previously explored (up to 150 mW/μm2). Raman spectroscopy, optically-detected-magnetic-resonance (ODMR) and charge-photoconversion fluorescence detection are applied to characterize the properties and dynamics of NV- and NV0 centers. We demonstrate that high laser power strongly promotes photoconversion of NV0 to NV- centers. Surprisingly, the excess NV- population is stable over a time scale of one hundred milliseconds after switching off the laser, resulting in long-lived enrichment of shallow NV-. The beneficial effect of photoconversion is less marked in nanostructured samples. Our results are important to inform the design of samples and experimental procedures for applications relying on ensembles of shallow NV- centers in diamond.
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Submitted 11 May, 2021;
originally announced May 2021.
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Fluorine-based color centers in diamond
Authors:
S. Ditalia Tchernij,
T. Lühmann,
E. Corte,
F. Sardi,
F. Picollo,
P. Traina,
M. Brajkovic,
A. Crnjac,
S. Pezzagna,
I. P. Degiovanni,
E. Moreva,
P. Aprà,
P. Olivero,
Z. Siketić,
J. Meijer,
M. Genovese,
J. Forneris
Abstract:
We report on the creation and characterization of the luminescence properties of high-purity diamond substrates upon F ion implantation and subsequent thermal annealing. Their room-temperature photoluminescence emission consists of a weak emission line at 558 nm and of intense bands in the 600 - 750 nm spectral range. Characterization at liquid He temperature reveals the presence of a structured s…
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We report on the creation and characterization of the luminescence properties of high-purity diamond substrates upon F ion implantation and subsequent thermal annealing. Their room-temperature photoluminescence emission consists of a weak emission line at 558 nm and of intense bands in the 600 - 750 nm spectral range. Characterization at liquid He temperature reveals the presence of a structured set of lines in the 600 - 670 nm spectral range. We discuss the dependence of the emission properties of F-related optical centers on different experimental parameters such as the operating temperature and the excitation wavelength. The correlation of the emission intensity with F implantation fluence, and the exclusive observation of the afore-mentioned spectral features in F-implanted and annealed samples provides a strong indication that the observed emission features are related to a stable F-containing defective complex in the diamond lattice.
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Submitted 9 December, 2020; v1 submitted 28 September, 2020;
originally announced September 2020.
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Quantum micro-nano devices fabricated in diamond by femtosecond laser and ion irradiation
Authors:
Shane M. Eaton,
J. P. Hadden,
Vibhav Bharadwaj,
Jacopo Forneris,
Federico Picollo,
Federico Bosia,
Belen Sotillo,
Argyro N. Giakoumaki,
Ottavia Jedrkiewicz,
Andrea Chiappini,
Maurizio Ferrari,
Roberto Osellame,
Paul E. Barclay,
Paolo Olivero,
Roberta Ramponi
Abstract:
Diamond has attracted great interest as a quantum technology platform thanks to its optically active nitrogen vacancy center (NV). The NV's ground state spin can be read out optically exhibiting long spin coherence times of about 1 ms even at ambient temperatures. In addition, the energy levels of the NV are sensitive to external fields. These properties make NVs attractive as a scalable platform…
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Diamond has attracted great interest as a quantum technology platform thanks to its optically active nitrogen vacancy center (NV). The NV's ground state spin can be read out optically exhibiting long spin coherence times of about 1 ms even at ambient temperatures. In addition, the energy levels of the NV are sensitive to external fields. These properties make NVs attractive as a scalable platform for efficient nanoscale resolution sensing based on electron spins and for quantum information systems. Diamond photonics enhances optical interaction with NVs, beneficial for both quantum sensing and information. Diamond is also compelling for microfluidic applications due to its outstanding biocompatibility, with sensing functionality provided by NVs. However, it remains a significant challenge to fabricate photonics, NVs and microfluidics in diamond. In this Report, an overview is provided of ion irradiation and femtosecond laser writing, two promising fabrication methods for diamond based quantum technological devices. The unique capabilities of both techniques are described, and the most important fabrication results of color center, optical waveguide and microfluidics in diamond are reported, with an emphasis on integrated devices aiming towards high performance quantum sensors and quantum information systems of tomorrow
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Submitted 16 April, 2020;
originally announced April 2020.
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Practical applications of quantum sensing: a simple method to enhance sensitivity of Nitrogen-Vacancy-based temperature sensors
Authors:
E. Moreva,
E. Bernardi,
P. Traina,
A. Sosso,
S. Ditalia Tchernij,
J. Forneris,
F. Picollo,
G. Brida,
Z. Pastuovic,
I. P. Degiovanni,
P. Olivero,
M. Genovese
Abstract:
Nitrogen-vacancy centers in diamond allow measurement of environment properties such as temperature, magnetic and electric fields at nanoscale level, of utmost relevance for several research fields, ranging from nanotechnologies to bio-sensing. The working principle is based on the measurement of the resonance frequency shift of a single nitrogen-vacancy center (or an ensemble of them), usually de…
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Nitrogen-vacancy centers in diamond allow measurement of environment properties such as temperature, magnetic and electric fields at nanoscale level, of utmost relevance for several research fields, ranging from nanotechnologies to bio-sensing. The working principle is based on the measurement of the resonance frequency shift of a single nitrogen-vacancy center (or an ensemble of them), usually detected by by monitoring the center photoluminescence emission intensity. Albeit several schemes have already been proposed, the search for the simplest and most effective one is of key relevance for real applications. Here we present a new continuous-wave lock-in based technique able to reach unprecedented sensitivity in temperature measurement at micro/nanoscale volumes (4.8 mK/Hz$^{1/2}$ in $μ$m$^3$). Furthermore, the present method has the advantage of being insensitive to the enviromental magnetic noise, that in general introduces a bias in the temperature measurement.
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Submitted 23 December, 2019;
originally announced December 2019.
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Recent Results from Polycrystalline CVD Diamond Detectors
Authors:
RD42 Collaboration,
L. Bäni,
A. Alexopoulos,
M. Artuso,
F. Bachmair,
M. Bartosik,
H. Beck,
V. Bellini,
V. Belyaev,
B. Bentele,
A. Bes,
J. -M. Brom,
M. Bruzzi,
G. Chiodini,
D. Chren,
V. Cindro,
G. Claus,
J. Collot,
J. Cumalat,
A. Dabrowski,
R. D'Alessandro,
D. Dauvergne,
W. de Boer,
C. Dorfer,
M. Dünser
, et al. (87 additional authors not shown)
Abstract:
Diamond is a material in use at many nuclear and high energy facilities due to its inherent radiation tolerance and ease of use. We have characterized detectors based on chemical vapor deposition (CVD) diamond before and after proton irradiation. We present preliminary results of the spatial resolution of unirradiated and irradiated CVD diamond strip sensors. In addition, we measured the pulse hei…
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Diamond is a material in use at many nuclear and high energy facilities due to its inherent radiation tolerance and ease of use. We have characterized detectors based on chemical vapor deposition (CVD) diamond before and after proton irradiation. We present preliminary results of the spatial resolution of unirradiated and irradiated CVD diamond strip sensors. In addition, we measured the pulse height versus particle rate of unirradiated and irradiated polycrystalline CVD (pCVD) diamond pad detectors up to a particle flux of $20\,\mathrm{MHz/cm^2}$ and a fluence up to $4 \times 10^{15}\,n/\mathrm{cm^2}$.
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Submitted 16 October, 2019;
originally announced October 2019.
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Nanodiamonds-induced effects on neuronal firing of mouse hippocampal microcircuits
Authors:
L. Guarina,
C. Calorio,
D. Gavello,
E. Moreva,
P. Traina,
A. Battiato,
S. Ditalia Tchernij,
J. Forneris,
M. Gai,
F. Picollo,
P. Olivero,
M. Genovese,
E. Carbone,
A. Marcantoni,
V. Carabelli
Abstract:
Fluorescent nanodiamonds (FND) are carbon-based nanomaterials that can efficiently incorporate optically active photoluminescent centers such as the nitrogen-vacancy complex, thus making them promising candidates as optical biolabels and drug-delivery agents. FNDs exhibit bright fluorescence without photobleaching combined with high uptake rate and low cytotoxicity. Focusing on FNDs interference w…
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Fluorescent nanodiamonds (FND) are carbon-based nanomaterials that can efficiently incorporate optically active photoluminescent centers such as the nitrogen-vacancy complex, thus making them promising candidates as optical biolabels and drug-delivery agents. FNDs exhibit bright fluorescence without photobleaching combined with high uptake rate and low cytotoxicity. Focusing on FNDs interference with neuronal function, here we examined their effect on cultured hippocampal neurons, monitoring the whole network development as well as the electrophysiological properties of single neurons. We observed that FNDs drastically decreased the frequency of inhibitory (from 1.81 Hz to 0.86 Hz) and excitatory (from 1.61 Hz to 0.68 Hz) miniature postsynaptic currents, and consistently reduced action potential (AP) firing frequency (by 36%), as measured by microelectrode arrays. On the contrary, bursts synchronization was preserved, as well as the amplitude of spontaneous inhibitory and excitatory events. Current-clamp recordings revealed that the ratio of neurons responding with AP trains of high-frequency (fast-spiking) versus neurons responding with trains of low-frequency (slow-spiking) was unaltered, suggesting that FNDs exerted a comparable action on neuronal subpopulations. At the single cell level, rapid onset of the somatic AP ("kink") was drastically reduced in FND-treated neurons, suggesting a reduced contribution of axonal and dendritic components while preserving neuronal excitability.
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Submitted 2 March, 2018;
originally announced March 2018.
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Photo-physical properties of He-related color centers in diamond
Authors:
G. Prestopino,
M. Marinelli,
E. Milani,
C. Verona,
G. Verona-Rinati P. Traina,
E. Moreva,
I. P. Degiovanni,
M. Genovese,
S. Ditalia Tchernij,
F. Picollo,
P. Olivero,
J. Forneris
Abstract:
Diamond is a promising platform for the development of technological applications in quantum optics and photonics. The quest for color centers with optimal photo-physical properties has led in recent years to the search for novel impurity-related defects in this material. Here, we report on a systematic investigation of the photo-physical properties of two He-related (HR) emission lines at 535 nm…
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Diamond is a promising platform for the development of technological applications in quantum optics and photonics. The quest for color centers with optimal photo-physical properties has led in recent years to the search for novel impurity-related defects in this material. Here, we report on a systematic investigation of the photo-physical properties of two He-related (HR) emission lines at 535 nm and 560 nm created in three different diamond substrates upon implantation with 1.3 MeV He+ ions and subsequent annealing. The spectral features of the HR centers were studied in an "optical grade" diamond substrate as a function of several physical parameters, namely the measurement temperature, the excitation wavelength and the intensity of external electric fields. The emission lifetimes of the 535 nm and 560 nm lines were also measured by means of time-gated photoluminescence measurements, yielding characteristic decay times of (29 +- 5) ns and (106 +- 10) ns, respectively. The Stark shifting of the HR centers under the application of an external electrical field was observed in a CVD diamond film equipped with buried graphitic electrodes, suggesting a lack of inversion symmetry in the defects' structure. Furthermore, the photoluminescence map** under 405 nm excitation of a "detector grade" diamond sample implanted at a 1x1010 cm-2 He+ ion fluence enabled to identify the spectral features of both the HR emission lines from the same localized optical spots. The reported results provide a first insight towards the understanding of the structure of He-related defects in diamond and their possible utilization in practical applications
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Submitted 29 August, 2017;
originally announced August 2017.
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Direct experimental observation of nonclassicality in ensembles of single photon emitters
Authors:
E. Moreva,
P. Traina,
J. Forneris,
I. P. Degiovanni,
S. Ditalia Tchernij,
F. Picollo,
G. Brida,
P. Olivero,
M. Genovese
Abstract:
In this work we experimentally demonstrate for the first time a recently proposed criterion adressed to detect nonclassical behavior in the fluorescence emission of ensembles of single-photon emitters. In particular, we apply the method to study clusters of NV centres in diamond observed via single-photon-sensitive confocal microscopy. Theoretical considerations on the behavior of the parameter at…
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In this work we experimentally demonstrate for the first time a recently proposed criterion adressed to detect nonclassical behavior in the fluorescence emission of ensembles of single-photon emitters. In particular, we apply the method to study clusters of NV centres in diamond observed via single-photon-sensitive confocal microscopy. Theoretical considerations on the behavior of the parameter at any arbitrary order in presence of poissonian noise are presented and, finally, the opportunity of detecting manifold coincidences is discussed.
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Submitted 8 May, 2017;
originally announced May 2017.
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Formation of buried conductive micro-channels in single crystal diamond with MeV C and He implantation
Authors:
F. Picollo,
P. Olivero,
F. Bellotti,
Ž. Pastuović,
N. Skukan,
A. Lo Giudice,
G. Amato,
M. Jakšić,
E. Vittone
Abstract:
As demonstrated in previous works, implantation with a MeV ion microbeam through masks with graded thickness allows the formation of conductive micro-channels in diamond which are embedded in the insulating matrix at controllable depths [P. Olivero et al., Diamond Relat. Mater. 18 (5-8), 870-876 (2009)]. In the present work we report about the systematic electrical characterization of such micro-c…
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As demonstrated in previous works, implantation with a MeV ion microbeam through masks with graded thickness allows the formation of conductive micro-channels in diamond which are embedded in the insulating matrix at controllable depths [P. Olivero et al., Diamond Relat. Mater. 18 (5-8), 870-876 (2009)]. In the present work we report about the systematic electrical characterization of such micro-channels as a function of several implantation conditions, namely: ion species and energy, implantation fluence. The current-voltage (IV) characteristics of the buried channels were measured at room temperature with a two point probe station. Significant parameters such as the sheet resistance and the characteristic exponent (alpha) of the IV power-law trend were expressed as a function of damage density, with satisfactory compatibility between the results obtained in different implantation conditions.
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Submitted 9 September, 2016;
originally announced September 2016.
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All-carbon multi-electrode array for real-time in vitro measurements of oxidizable neurotransmitters
Authors:
F. Picollo,
A. Battiato,
E. Bernardi,
M. Plaitano,
C. Franchino,
S. Gosso,
A. Pasquarelli,
E. Carbone,
P. Olivero,
V. Carabelli
Abstract:
We report on the ion beam fabrication of all-carbon multi electrode arrays (MEAs) based on 16 graphitic micro-channels embedded in single-crystal diamond (SCD) substrates. The fabricated SCD-MEAs are systematically employed for the in vitro simultaneous amperometric detection of the secretory activity from populations of chromaffin cells, demonstrating a new sensing approach with respect to standa…
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We report on the ion beam fabrication of all-carbon multi electrode arrays (MEAs) based on 16 graphitic micro-channels embedded in single-crystal diamond (SCD) substrates. The fabricated SCD-MEAs are systematically employed for the in vitro simultaneous amperometric detection of the secretory activity from populations of chromaffin cells, demonstrating a new sensing approach with respect to standard techniques. The biochemical stability and biocompatibility of the SCD-based device combined with the parallel recording of multi-electrodes array allow: i) a significant time saving in data collection during drug screening and/or pharmacological tests over a large number of cells, ii) the possibility of comparing altered cell functionality among cell populations, and iii) the repeatition of acquisition runs over many cycles with a fully non-toxic and chemically robust bio-sensitive substrate.
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Submitted 25 August, 2016;
originally announced August 2016.
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Finite element analysis of ion-implanted diamond surface swelling
Authors:
F. Bosia,
P. Olivero,
E. Vittone,
F. Picollo,
A. Lo Giudice,
M. Jaksic,
N. Skukan,
L. Giuntini,
M. Massi,
S. Calusi,
M. Vannoni,
S. Lagomarsino,
S. Sciortino
Abstract:
We present experimental results and numerical Finite Element analysis to describe surface swelling due to the creation of buried graphite-like inclusions in diamond substrates subjected to MeV ion implantation. Numerical predictions are compared to experimental data for MeV proton and helium implantations, performed with scanning ion microbeams. Swelling values are measured with white light interf…
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We present experimental results and numerical Finite Element analysis to describe surface swelling due to the creation of buried graphite-like inclusions in diamond substrates subjected to MeV ion implantation. Numerical predictions are compared to experimental data for MeV proton and helium implantations, performed with scanning ion microbeams. Swelling values are measured with white light interferometric profilometry in both cases. Simulations are based on a model which accounts for the through-the-thickness variation of mechanical parameters in the material, as a function of ion type, fluence and energy. Surface deformation profiles and internal stress distributions are analyzed and numerical results are seen to adequately fit experimental data. Results allow us to draw conclusions on structural damage mechanisms in diamond for different MeV ion implantations.
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Submitted 29 August, 2016;
originally announced August 2016.
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Focused ion beam fabrication and IBIC characterization of a diamond detector with buried electrodes
Authors:
P. Olivero,
J. Forneris,
M. Jaksic,
Z. Pastuovic,
F. Picollo,
N. Skukan,
E. Vittone
Abstract:
This paper reports on the fabrication and characterization of a high purity monocrystalline diamond detector with buried electrodes realized by the selective damage induced by a focused 6 MeV carbon ion beam scanned over a pattern defined at the micrometric scale. A suitable variable-thickness mask was deposited on the diamond surface in order to modulate the penetration depth of the ions and to s…
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This paper reports on the fabrication and characterization of a high purity monocrystalline diamond detector with buried electrodes realized by the selective damage induced by a focused 6 MeV carbon ion beam scanned over a pattern defined at the micrometric scale. A suitable variable-thickness mask was deposited on the diamond surface in order to modulate the penetration depth of the ions and to shallow the damage profile toward the surface. After the irradiation, the sample was annealed at high temperature in order to promote the conversion to the graphitic phase of the end-of-range regions which experienced an ion-induced damage exceeding the damage threshold, while recovering the sub-threshold damaged regions to the highly resistive diamond phase. This process provided conductive graphitic electrodes embedded in the insulating diamond matrix; the presence of the variable-thickness mask made the terminations of the channels emerging at the diamond surface and available to be connected to an external electronic circuit. In order to evaluate the quality of this novel microfabrication procedure based on direct ion writing, we performed frontal Ion Beam Induced Charge (IBIC) measurements by raster scanning focused MeV ion beams onto the diamond surface. Charge collection efficiency (CCE) maps were measured at different bias voltages. The interpretation of such maps was based on the Shockley-Ramo-Gunn formalism.
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Submitted 25 August, 2016;
originally announced August 2016.
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Lateral IBIC characterization of single crystal synthetic diamond detectors
Authors:
A. Lo Giudice,
P. Olivero,
C. Manfredotti,
M. Marinelli,
E. Milani,
F. Picollo,
G. Prestopino,
A. Re,
V. Rigato,
C. Verona,
G. Verona-Rinati,
E. Vittone
Abstract:
In order to evaluate the charge collection efficiency (CCE) profile of single-crystal diamond devices based on a p type/intrinsic/metal configuration, a lateral Ion Beam Induced Charge (IBIC) analysis was performed over their cleaved cross sections using a 2 MeV proton microbeam. CCE profiles in the depth direction were extracted from the cross-sectional maps at variable bias voltage. IBIC spectra…
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In order to evaluate the charge collection efficiency (CCE) profile of single-crystal diamond devices based on a p type/intrinsic/metal configuration, a lateral Ion Beam Induced Charge (IBIC) analysis was performed over their cleaved cross sections using a 2 MeV proton microbeam. CCE profiles in the depth direction were extracted from the cross-sectional maps at variable bias voltage. IBIC spectra relevant to the depletion region extending beneath the frontal Schottky electrode show a 100% CCE, with a spectral resolution of about 1.5%. The dependence of the width of the high efficiency region from applied bias voltage allows the constant residual do** concentration of the active region to be evaluated. The region where the electric field is absent shows an exponentially decreasing CCE profile, from which it is possible to estimate the diffusion length of the minority carriers by means of a drift-diffusion model.
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Submitted 25 August, 2016;
originally announced August 2016.
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Development and characterization of a diamond-insulated graphitic multi electrode array realized with ion beam lithography
Authors:
F. Picollo,
A. Battiato,
E. Carbone,
L. Croin,
E. Enrico,
J. Forneris,
S. Gosso,
P. Olivero,
A. Pasquarelli,
V. Carabelli
Abstract:
The detection of quantal exocytic events from neurons and neuroendocrine cells is a challenging task in neuroscience. One of the most promising platforms for the development of a new generation of biosensors is diamond, due to its biocompatibility, transparency and chemical inertness. Moreover, the electrical properties of diamond can be turned from a perfect insulator into a conductive material (…
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The detection of quantal exocytic events from neurons and neuroendocrine cells is a challenging task in neuroscience. One of the most promising platforms for the development of a new generation of biosensors is diamond, due to its biocompatibility, transparency and chemical inertness. Moreover, the electrical properties of diamond can be turned from a perfect insulator into a conductive material (resistivity Ohm cm) by exploiting the metastable nature of this allotropic form of carbon. A 16 channels MEA (Multi Electrode Array) suitable for cell culture growing has been fabricated by means of ion implantation. A focused 1.2 MeV He+ beam was scanned on a IIa single-crystal diamond sample (4.5x4.5x0.5 mm3) to cause highly damaged sub-superficial structures that were defined with micrometric spatial resolution. After implantation, the sample was annealed. This process provides the conversion of the sub-superficial highly damaged regions to a graphitic phase embedded in a highly insulating diamond matrix. Thanks to a three-dimensional masking technique, the endpoints of the sub-superficial channels emerge in contact with the sample surface, therefore being available as sensing electrodes. Cyclic voltammetry and amperometry measurements of solutions with increasing concentrations of adrenaline were performed to characterize the biosensor sensitivity. The reported results demonstrate that this new type of biosensor is suitable for in vitro detection of catecholamine release.
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Submitted 25 August, 2016;
originally announced August 2016.
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IBIC characterization of an ion-beam-micromachined multi-electrode diamond detector
Authors:
J. Forneris,
V. Grilj,
M. Jaksic,
A. Lo Giudice,
P. Olivero,
F. Picollo,
N. Skukan,
C. Verona,
G. Verona-Rinati,
E. Vittone
Abstract:
Deep Ion Beam Lithography (DIBL) has been used for the direct writing of buried graphitic regions in monocrystalline diamond with micrometric resolution. Aiming at the development and the characterization of a fully ion-beam-micromachined solid state ionization chamber, a device with interdigitated electrodes was fabricated by using a 1.8 MeV He+ ion microbeam scanning on a homoepitaxial, grown by…
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Deep Ion Beam Lithography (DIBL) has been used for the direct writing of buried graphitic regions in monocrystalline diamond with micrometric resolution. Aiming at the development and the characterization of a fully ion-beam-micromachined solid state ionization chamber, a device with interdigitated electrodes was fabricated by using a 1.8 MeV He+ ion microbeam scanning on a homoepitaxial, grown by chemical vapour deposition (CVD). In order to evaluate the ionizing-radiation-detection performance of the device, charge collection efficiency (CCE) maps were extracted from Ion Beam Induced Charge (IBIC) measurements carried out by probing different arrangements of buried microelectrodes. The analysis of the CCE maps allowed for an exhaustive evaluation of the detector features, in particular the individuation of the different role played by electrons and holes in the formation of the induced charge pulses. Finally, a comparison of the performances of the detector with buried graphitic electrodes with those relevant to conventional metallic surface electrodes evidenced the formation of a dead layer overlying the buried electrodes as a result of the fabrication process.
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Submitted 25 August, 2016;
originally announced August 2016.
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Direct fabrication of three-dimensional buried conductive channels in single crystal diamond with ion microbeam induced graphitization
Authors:
P. Olivero,
G. Amato,
F. Bellotti,
O. Budnyk,
E. Colombo,
M. Jaksic,
A. Lo Giudice,
C. Manfredotti,
Z. Pastuovic,
F. Picollo,
N. Skukan,
M. Vannoni,
E. Vittone
Abstract:
We report on a novel method for the fabrication of three-dimensional buried graphitic micropaths in single crystal diamond with the employment of focused MeV ions. The use of implantation masks with graded thickness at the sub-micrometer scale allows the formation of conductive channels which are embedded in the insulating matrix at controllable depths. In particular, the modulation of the channel…
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We report on a novel method for the fabrication of three-dimensional buried graphitic micropaths in single crystal diamond with the employment of focused MeV ions. The use of implantation masks with graded thickness at the sub-micrometer scale allows the formation of conductive channels which are embedded in the insulating matrix at controllable depths. In particular, the modulation of the channels depth at their endpoints allows the surface contacting of the channel terminations with no need of further fabrication stages. In the present work we describe the sample masking, which includes the deposition of semi spherical gold contacts on the sample surface, followed by MeV ion implantation. Because of the significant difference between the densities of pristine and amorphous or graphitized diamond, the formation of buried channels has a relevant mechanical effect on the diamond structure, causing localized surface swelling, which has been measured both with interferometric profilometry and atomic force microscopy. The electrical properties of the buried channels are then measured with a two point probe station: clear evidence is given that only the terminal points of the channels are electrically connected with the surface, while the rest of the channels extends below the surface. IV measurements are employed also to qualitatively investigate the electrical properties of the channels as a function of implantation fluence and annealing.
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Submitted 26 August, 2016;
originally announced August 2016.
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Direct fabrication and IV characterization of sub-surface conductive channels in diamond with MeV ion implantation
Authors:
P. Olivero,
G. Amato,
F. Bellotti,
S. Borini,
A. Lo Giudice,
F. Picollo,
E. Vittone
Abstract:
In the present work we report about the investigation of the conduction mechanism of sp2 carbon micro-channels buried in single crystal diamond. The structures are fabricated with a novel technique which employs a MeV focused ion-beam to damage diamond in conjunction with variable thickness masks. This process changes significantly the structural proprieties of the target material, because the ion…
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In the present work we report about the investigation of the conduction mechanism of sp2 carbon micro-channels buried in single crystal diamond. The structures are fabricated with a novel technique which employs a MeV focused ion-beam to damage diamond in conjunction with variable thickness masks. This process changes significantly the structural proprieties of the target material, because the ion nuclear energy loss induces carbon conversion from sp3 to sp2 state mainly at the end of range of the ions (few micrometers). Furthermore, placing a mask with increasing thickness on the sample it is possible to modulate the channels depth at their endpoints, allowing their electrical connection with the surface. A single-crystal HPHT diamond sample was implanted with 1.8 MeV He+ ions at room temperature, the implantation fluence was set in the range 2.1x10^16 - 6.3x10^17 ions cm^-2, determining the formation of buried micro-channels at 3 um. After deposition of metallic contacts at the channels' endpoints, the electrical characterization was performed measuring the I-V curves at variable temperatures in the 80-690 K range. The Variable Range Hop** model was used to fit the experimental data in the ohmic regime, allowing the estimation of characteristic parameters such as the density of localized states at the Fermi level. A value of 5.5x10^17 states cm-3 eV-1 was obtained, in satisfactory agreement with values previously reported in literature. The power-law dependence between current and voltage is consistent with the space charge limited mechanism at moderate electric fields.
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Submitted 26 August, 2016;
originally announced August 2016.
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Modification of the structure of diamond with MeV ion implantation
Authors:
F. Bosia,
N. Argiolas,
M. Bazzan,
P. Olivero,
F. Picollo,
A. Sordini,
M. Vannoni,
E. Vittone
Abstract:
We present experimental results and numerical simulations to investigate the modification of structural-mechanical properties of ion-implanted single-crystal diamond. A phenomenological model is used to derive an analytical expression for the variation of mass density and elastic properties as a function of damage density in the crystal. These relations are applied together with SRIM Monte Carlo s…
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We present experimental results and numerical simulations to investigate the modification of structural-mechanical properties of ion-implanted single-crystal diamond. A phenomenological model is used to derive an analytical expression for the variation of mass density and elastic properties as a function of damage density in the crystal. These relations are applied together with SRIM Monte Carlo simulations to set up Finite Element simulations for the determination of internal strains and surface deformation of MeV-ion-implanted diamond samples. The results are validated through comparison with high resolution X-ray diffraction and white-light interferometric profilometry experiments. The former are carried out on 180 keV B implanted diamond samples, to determine the induced structural variation, in terms of lattice spacing and disorder, whilst the latter are performed on 1.8 MeV He implanted diamond samples to measure surface swelling. The effect of thermal processing on the evolution of the structural-mechanical properties of damaged diamond is also evaluated by performing the same profilometric measurements after annealing at 1000 °C, and modeling the obtained trends with a suitably modified analytical model. The results allow the development of a coherent model describing the effects of MeV-ion-induced damage on the structural-mechanical properties of single-crystal diamond. In particular, we suggest a more reliable method to determine the so-called diamond "graphitization threshold" for the considered implantation type.
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Submitted 25 August, 2016;
originally announced August 2016.
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A 3-dimensional interdigitated electrode geometry for the enhancement of charge collection efficiency in diamond detectors
Authors:
J. Forneris,
A. Lo Giudice,
P. Olivero,
F. Picollo,
A. Re,
M. Marinelli,
F. Pompili,
C. Verona,
G. Verona Rinati,
M. Benetti,
D. Cannata,
F. Di Pietrantonio
Abstract:
In this work, a single crystal CVD diamond film with a novel three-dimensional (3D) interdigitated electrode geometry has been fabricated with the Reactive Ion Etching (RIE) technique in order to increase the charge collection efficiency (CCE) with respect to that obtained by standard superficial electrodes. The geometrical arrangement of the electric field lines due to the 3D patterning of the el…
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In this work, a single crystal CVD diamond film with a novel three-dimensional (3D) interdigitated electrode geometry has been fabricated with the Reactive Ion Etching (RIE) technique in order to increase the charge collection efficiency (CCE) with respect to that obtained by standard superficial electrodes. The geometrical arrangement of the electric field lines due to the 3D patterning of the electrodes results in a shorter travel path for the excess charge carriers, thus contributing to a more efficient charge collection mech-anism. The CCE of the device was mapped by means of the Ion Beam Induced Charge (IBIC) technique. A 1 MeV proton micro-beam was raster scanned over the active area of the diamond detector under different bias voltage conditions, enabling to probe the charge transport properties of the detector up to a depth of 8 μm below the sample surface. The experimental results, supported by the numerical simulations, show a significant improvement in the 3D-detector performance (i.e. CCE, energy resolution, extension of the active area) if compared with the results obtained by standard surface metallic electrodes.
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Submitted 25 August, 2016;
originally announced August 2016.
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Single-photon emitters based on NIR colour centres in diamond coupled with solid immersion lenses
Authors:
D. Gatto Monticone,
J. Forneris,
M. Levi,
A. Battiato,
F. Picollo,
P. Olivero,
P. Traina,
E. Moreva,
E. Enrico,
G. Brida,
I. P. Degiovanni,
M. Genovese,
G. Amato,
L. Boarino
Abstract:
Single-photon sources represent a key enabling technology in quantum optics, and single colour centres in diamond are a promising platform to serve this purpose, due to their high quantum efficiency and photostability at room temperature. The widely studied nitrogen vacancy centres are characterized by several limitations, thus other defects have recently been considered, with a specific focus of…
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Single-photon sources represent a key enabling technology in quantum optics, and single colour centres in diamond are a promising platform to serve this purpose, due to their high quantum efficiency and photostability at room temperature. The widely studied nitrogen vacancy centres are characterized by several limitations, thus other defects have recently been considered, with a specific focus of centres emitting in the Near Infra-Red. In the present work, we report on the coupling of native near-infrared-emitting centres in high-quality single crystal diamond with Solid Immersion Lens structures fabricated by Focused Ion Beam lithography. The reported improvements in terms of light collection efficiency make the proposed system an ideal platform for the development of single-photon emitters with appealing photophysical and spectral properties.
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Submitted 25 August, 2016;
originally announced August 2016.
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Kelvin probe characterization of buried graphitic microchannels in single-crystal diamond
Authors:
E. Bernardi,
A. Battiato,
P. Olivero,
F. Picollo,
E. Vittone
Abstract:
In this work, we present an investigation by Kelvin Probe Microscopy (KPM) of buried graphitic microchannels fabricated in single-crystal diamond by direct MeV ion microbeam writing. Metal deposition of variable-thickness masks was adopted to implant channels with emerging endpoints and high temperature annealing was performed in order to induce the graphitization of the highly-damaged buried regi…
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In this work, we present an investigation by Kelvin Probe Microscopy (KPM) of buried graphitic microchannels fabricated in single-crystal diamond by direct MeV ion microbeam writing. Metal deposition of variable-thickness masks was adopted to implant channels with emerging endpoints and high temperature annealing was performed in order to induce the graphitization of the highly-damaged buried region. When an electrical current was flowing through the biased buried channel, the structure was clearly evidenced by KPM maps of the electrical potential of the surface region overlying the channel at increasing distances from the grounded electrode. The KPM profiling shows regions of opposite contrast located at different distances from the endpoints of the channel. This effect is attributed to the different electrical conduction properties of the surface and of the buried graphitic layer. The model adopted to interpret these KPM maps and profiles proved to be suitable for the electronic characterization of buried conductive channels, providing a non-invasive method to measure the local resistivity with a micrometer resolution. The results demonstrate the potential of the technique as a powerful diagnostic tool to monitor the functionality of all-carbon graphite/diamond devices to be fabricated by MeV ion beam lithography.
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Submitted 25 August, 2016;
originally announced August 2016.
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Effects of high-power laser irradiation on sub-superficial graphitic layers in single crystal diamond
Authors:
F. Picollo,
S. Rubanov,
C. Tomba,
A. Battiato,
E. Enrico,
A. Perrat-Mabilon,
C. Peaucelle,
T. N. Tran Thi,
L. Boarino,
E. Gheeraert,
P. Olivero
Abstract:
We report on the structural modifications induced by a lambda = 532 nm ns-pulsed high-power laser on sub-superficial graphitic layers in single-crystal diamond realized by means of MeV ion implantation. A systematic characterization of the structures obtained under different laser irradiation conditions (power density, number of pulses) and subsequent thermal annealing was performed by different e…
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We report on the structural modifications induced by a lambda = 532 nm ns-pulsed high-power laser on sub-superficial graphitic layers in single-crystal diamond realized by means of MeV ion implantation. A systematic characterization of the structures obtained under different laser irradiation conditions (power density, number of pulses) and subsequent thermal annealing was performed by different electron microscopy techniques. The main feature observed after laser irradiation is the thickening of the pre-existing graphitic layer. Cross sectional SEM imaging was performed to directly measure the thickness of the modified layers, and subsequent selective etching of the buried layers was employed to both assess their graphitic nature and enhance the SEM imaging contrast. In particular, it was found that for optimal irradiation parameters the laser processing induces a six-fold increase the thickness of sub superficial graphitic layers without inducing mechanical failures in the surrounding crystal. TEM microscopy and EELS spectroscopy allowed a detailed analysis of the internal structure of the laser irradiated layers, highlighting the presence of different nano graphitic and amorphous layers. The obtained results demonstrate the effectiveness and versatility of high-power laser irradiation for an accurate tuning of the geometrical and structural features of graphitic structures embedded in single crystal diamond, and open new opportunities in diamond fabrication.
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Submitted 25 August, 2016;
originally announced August 2016.
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Characterization of the recovery of mechanical properties of ion-implanted diamond after thermal annealing
Authors:
M. Mohr,
F. Picollo,
A. Battiato,
E. Bernardi,
J. Forneris,
A. Tengattini,
E. Enrico,
L. Boarino,
F. Bosia,
H. J. Fecht,
P. Olivero
Abstract:
Due to their outstanding mechanical properties, diamond and diamond-like materials find significant technological applications ranging from well-established industrial fields (cutting tools, coatings, etc.) to more advanced mechanical devices as micro- and nano-electromechanical systems. The use of energetic ions is a powerful and versatile tool to fabricate three-dimensional micro-mechanical stru…
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Due to their outstanding mechanical properties, diamond and diamond-like materials find significant technological applications ranging from well-established industrial fields (cutting tools, coatings, etc.) to more advanced mechanical devices as micro- and nano-electromechanical systems. The use of energetic ions is a powerful and versatile tool to fabricate three-dimensional micro-mechanical structures. In this context, it is of paramount importance to have an accurate knowledge of the effects of ion-induced structural damage on the mechanical properties of this material, firstly to predict potential undesired side-effects of the ion implantation process, and possibly to tailor the desired mechanical properties of the fabricated devices. We present an Atomic Force Microscopy (AFM) characterization of free-standing cantilevers in single-crystal diamond obtained by a FIB-assisted lift-off technique, which allows a determination of the Young's modulus of the diamond crystal after the MeV ion irradiation process concurrent to the fabrication of the microstructures, and subsequent thermal annealing. The AFM measurements were performed with the beam-bending technique and show that the thermal annealing process allows for an effective recovery of the mechanical properties of the pristine crystal.
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Submitted 25 August, 2016;
originally announced August 2016.
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Softening the ultra-stiff: controlled variation of Young's modulus in single crystal diamond
Authors:
A. Battiato,
M. Lorusso,
E. Bernardi,
F. Picollo,
F. Bosia,
D. Ugues,
A. Zelferino,
A. Damin,
J. Baima,
N. M. Pugno,
E. P. Ambrosio,
P. Olivero
Abstract:
A combined experimental and numerical study on the variation of the elastic properties of defective single-crystal diamond is presented for the first time, by comparing nano-indentation measurements on MeV-ion-implanted samples with multi-scale modeling consisting of both ab initio atomistic calculations and meso-scale Finite Element Method (FEM) simulations. It is found that by locally introducin…
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A combined experimental and numerical study on the variation of the elastic properties of defective single-crystal diamond is presented for the first time, by comparing nano-indentation measurements on MeV-ion-implanted samples with multi-scale modeling consisting of both ab initio atomistic calculations and meso-scale Finite Element Method (FEM) simulations. It is found that by locally introducing defects in the 2x10^18 - 5x10^21 cm-3 density range, a significant reduction of, as well as of density, can be induced in the diamond crystal structure without incurring in the graphitization of the material. Ab initio atomistic simulations confirm the experimental findings with a good degree of confidence. FEM simulations are further employed to verify the consistency of measured deformations with a stiffness reduction, and to derive strain and stress levels in the implanted region. Combining these experimental and numerical results, we also provide insight into the mechanism responsible for the depth dependence of the graphitization threshold in diamond. This work prospects the possibility of achieving accurate tunability of the mechanical properties of single-crystal diamond through defect engineering, with significant technological applications, i.e. the fabrication and control of the resonant frequency of diamond-based micromechanical resonators.
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Submitted 25 August, 2016;
originally announced August 2016.
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Micro and nano-patterning of single-crystal diamond by swift heavy ion irradiation
Authors:
G. Garcia,
I. Preda,
M. Diaz-Hijar,
V. Tormo-Marquez,
O. Pena Rodriguez,
J. Olivares,
F. Bosia,
N. M. Pugno,
F. Picollo,
L. Giuntini,
A. Sordini,
P. Olivero,
L. Lopez-Mir,
C. Ocal
Abstract:
This paper presents experimental data and analysis of the structural damage caused by swift-heavy ion irradiation of single-crystal diamond. The patterned buried structural damage is shown to generate, via swelling, a mirror-pattern on the sample surface, which remains largely damage-free. While extensive results are available for light ion implantations, this effect is reported here for the first…
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This paper presents experimental data and analysis of the structural damage caused by swift-heavy ion irradiation of single-crystal diamond. The patterned buried structural damage is shown to generate, via swelling, a mirror-pattern on the sample surface, which remains largely damage-free. While extensive results are available for light ion implantations, this effect is reported here for the first time in the heavy ion regime, where a completely different range of input parameters (in terms of ion species, energy, stop** power, etc.) is available for customized irradiation. The chosen ion species are Au and Br, in the energy range 10-40 MeV. The observed patterns, as characterized by profilometry and atomic force microscopy, are reported in a series of model experiments, which show swelling patterns ranging from a few nm to above 200 nm. Moreover, a systematic phenomenological modelling is presented, in which surface swelling measurements are correlated to buried crystal damage. A comparison is made with data for light ion implantations, showing good compatibility with the proposed models. The modelling presented in this work can be useful for the design and realization of micropatterned surfaces in single crystal diamond, allowing to generate highly customized structures by combining appropriately chosen irradiation parameters and masks.
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Submitted 25 August, 2016;
originally announced August 2016.
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Microelectrode arrays of diamond-insulated graphitic channels for real time detection of exocytotic events from cultured chromaffin cells and slices of adrenal glands
Authors:
F. Picollo,
A. Battiato,
E. Bernardi,
A. Marcantoni,
A. Pasquarelli,
E. Carbone,
P. Olivero,
V. Carabelli
Abstract:
A microstructured graphitic 4x4 multielectrode array was embedded in a single crystal diamond substrate (4x4 {uG-SCD MEA) for real-time monitoring of exocytotic events from cultured chromaffin cells and adrenal slices. The current approach relies on the development of a parallel ion beam lithographic technique, which assures the time effective fabrication of extended arrays with reproducible elect…
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A microstructured graphitic 4x4 multielectrode array was embedded in a single crystal diamond substrate (4x4 {uG-SCD MEA) for real-time monitoring of exocytotic events from cultured chromaffin cells and adrenal slices. The current approach relies on the development of a parallel ion beam lithographic technique, which assures the time effective fabrication of extended arrays with reproducible electrode dimensions. The reported device is suitable for performing amperometric and voltammetric recordings with high sensitivity and temporal resolution, by simultaneously acquiring data from 16 rectangularly shaped microelectrodes (20x3.5 um^2) separated by 200 um gaps. Taking advantage of the array geometry we addressed the following specific issues: i) detect both the spontaneous and KCl-evoked secretion simultaneously from several chromaffin cells directly cultured on the device surface, ii) resolve the waveform of different subsets of exocytotic events, iii) monitoring quantal secretory events from thin slices of the adrenal gland. The frequency of spontaneous release was low (0.12 Hz and 0.3 Hz respectively for adrenal slices and cultured cells) and increased up to 0.9 Hz after stimulation with 30 mM KCl in cultured cells. The spike amplitude as well as rise and decay time were comparable with those measured by carbon fiber microelectrodes and allowed to identify three different subsets of secretory events associated to "full fusion" events, "kiss and-run" and "kiss-and-stay" exocytosis, confirming that the device has adequate sensitivity and time resolution for real-time recordings. The device offers the significant advantage of shortening the time to collect data by allowing simultaneous recordings from cell populations either in primary cell cultures or in intact tissues.
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Submitted 25 August, 2016;
originally announced August 2016.
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Creation and characterization of He-related color centers in diamond
Authors:
Jacopo Forneris,
Andrea Tengattini,
Sviatoslav Ditalia Tchernij,
Federico Picollo,
Alfio Battiato,
Paolo Traina,
Ivo Degiovanni,
Ekaterina Moreva,
Giorgio Brida,
Veljko Grilj,
Natko Skukan,
Milko Jakšić,
Marco Genovese,
Paolo Olivero
Abstract:
Diamond is a promising material for the development of emerging applications in quantum optics, quantum information and quantum sensing. The fabrication and characterization of novel luminescent defects with suitable opto-physical properties is therefore of primary importance for further advances in these research fields. In this work we report on the investigation in the formation of photolumines…
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Diamond is a promising material for the development of emerging applications in quantum optics, quantum information and quantum sensing. The fabrication and characterization of novel luminescent defects with suitable opto-physical properties is therefore of primary importance for further advances in these research fields. In this work we report on the investigation in the formation of photoluminescent (PL) defects upon MeV He implantation in diamond. Such color centers, previously reported only in electroluminescence and cathodoluminescence regime, exhibited two sharp emission lines at 536.5 nm and 560.5 nm, without significant phonon sidebands. A strong correlation between the PL intensities of the above-mentioned emission lines and the He implantation fluence was found in the 10^15-10^17 cm^{-2} fluence range. The PL emission features were not detected in control samples, i.e. samples that were either unirradiated or irradiated with different ion species (H, C). Moreover, the PL emission lines disappeared in samples that were He-implanted above the graphitization threshold. Therefore, the PL features are attributed to optically active defects in the diamond matrix associated with He impurities. The intensity of the 536.5 nm and 560.5 nm emission lines was investigated as a function of the annealing temperature of the diamond substrate. The emission was observed upon annealing at temperatures higher than 500°C, at the expenses of the concurrently decreasing neutral-vacancy-related GR1 emission intensity. Therefore, our findings indicate that the luminescence originates from the formation of a stable lattice defect. Finally, the emission was investigated under different laser excitations wavelengths (i.e. 532 nm and 405 nm) with the purpose of gaining a preliminary insight about the position of the related levels in the energy gap of diamond.
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Submitted 4 June, 2016;
originally announced June 2016.
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Electroluminescence from nitrogen-vacancy and interstitial-related centers in bulk diamond stimulated by ion-beam-fabricated sub-superficial graphitic micro-electrodes
Authors:
J. Forneris,
S. Ditalia Tchernij,
A. Battiato,
F. Picollo,
A. Tengattini,
V. Grilj,
N. Skukan,
G. Amato,
L. Boarino,
I. P. Degiovanni,
E. Enrico,
P. Traina,
M. Jakšić,
M. Genovese,
P. Olivero
Abstract:
We report on the fabrication and characterization of a single-crystal diamond device for the electrical stimula- tion of light emission from nitrogen-vacancy (NV0) and other defect-related centers. Pairs of sub-superficial graphitic micro-electrodes embedded in insulating diamond were fabricated by a 6 MeV C3+ micro-beam irra- diation followed by thermal annealing. A photoluminescence (PL) charact…
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We report on the fabrication and characterization of a single-crystal diamond device for the electrical stimula- tion of light emission from nitrogen-vacancy (NV0) and other defect-related centers. Pairs of sub-superficial graphitic micro-electrodes embedded in insulating diamond were fabricated by a 6 MeV C3+ micro-beam irra- diation followed by thermal annealing. A photoluminescence (PL) characterization evidenced a low radiation damage concentration in the inter-electrode gap region, which did not significantly affect the PL features domi- nated by NV centers. The operation of the device in electroluminescence (EL) regime was investigated by ap- plying a bias voltage at the graphitic electrodes, resulting in the injection of a high excitation current above a threshold voltage (~300V), which effectively stimulated an intense EL emission from NV0 centers. In addition, we report on the new observation of two additional sharp EL emission lines (at 563 nm and 580 nm) related to interstitial defects formed during MeV ion beam fabrication.
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Submitted 8 July, 2015;
originally announced July 2015.
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Realization of a diamond based high density multi electrode array by means of deep ion beam lithography
Authors:
Federico Picollo,
Alfio Battiato,
Ettore Bernardi,
Luca Boarino,
Emanuele Enrico,
Jacopo Forneris,
Daniele Gatto Monticone,
Paolo Olivero
Abstract:
In the present work we report about a parallel-processing ion beam fabrication technique whereby high-density sub-superficial graphitic microstructures can be created in diamond. Ion beam implantation is an effective tool for the structural modification of diamond: in particular ion-damaged diamond can be converted into graphite, therefore obtaining an electrically conductive phase embedded in an…
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In the present work we report about a parallel-processing ion beam fabrication technique whereby high-density sub-superficial graphitic microstructures can be created in diamond. Ion beam implantation is an effective tool for the structural modification of diamond: in particular ion-damaged diamond can be converted into graphite, therefore obtaining an electrically conductive phase embedded in an optically transparent and highly insulating matrix. The proposed fabrication process consists in the combination of Deep Ion Beam Lithography (DIBL) and Focused Ion Beam (FIB) milling. FIB micromachining is employed to define micro-apertures in the contact masks consisting of thin (<10 um) deposited metal layers through which ions are implanted in the sample. A prototypical single-cell biosensor was realized with the above described technique. The biosensor has 16 independent electrodes converging inside a circular area of 20 um diameter (typical neuroendocrine cells size) for the simultaneous recording of amperometric signals.
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Submitted 6 December, 2014;
originally announced December 2014.
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Electroluminescence from a diamond device with ion-beam-micromachined buried graphitic electrodes
Authors:
J. Forneris,
A. Battiato,
D. Gatto Monticone,
F. Picollo,
G. Amato,
L. Boarino,
G. Brida,
I. P. Degiovanni,
E. Enrico,
M. Genovese,
E. Moreva,
P. Traina,
C. Verona,
G. Verona-Rinati,
P. Olivero
Abstract:
Focused MeV ion microbeams are suitable tools for the direct writing of conductive graphitic channels buried in an insulating diamond bulk, as demonstrated in previous works with the fabrication of multi-electrode ionizing radiation detectors and cellular biosensors. In this work we investigate the suitability of the fabrication method for the electrical excitation of colour centres in diamond. Di…
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Focused MeV ion microbeams are suitable tools for the direct writing of conductive graphitic channels buried in an insulating diamond bulk, as demonstrated in previous works with the fabrication of multi-electrode ionizing radiation detectors and cellular biosensors. In this work we investigate the suitability of the fabrication method for the electrical excitation of colour centres in diamond. Differently from photoluminescence, electroluminescence requires an electrical current flowing through the diamond sub-gap states for the excitation of the colour centres. With this purpose, buried graphitic electrodes with a spacing of 10 micrometers were fabricated in the bulk of a detector-grade CVD single-crystal diamond sample using a scanning 1.8 MeV He micro-beam. The current flowing in the gap region between the electrodes upon the application of a 250 V bias voltage was exploited as the excitation pump for the electroluminescence of different types of colour centres localized in the above-mentioned gap. The bright light emission was spatially mapped using a confocal optical microscopy setup. The spectral analysis of electroluminescence revealed the emission from neutrally-charged nitrogen-vacancy centres ($NV^0$, $λ_{ZPL}$ = 575 nm), as well as from cluster crystal dislocations (A-band, λ = 400-500 nm). Moreover, an electroluminescence signal with appealing spectral features (sharp emission at room temperature, low phonon sidebands) from He-related defects was detected ($λ_{ZPL}$ = 536.3 nm, $λ_{ZPL}$ = 560.5 nm); a low and broad peak around λ = 740 nm was also observed and tentatively ascribed to Si-V or GR1 centres. These results pose interesting future perspectives for the fabrication of electrically-stimulated single-photon emitters in diamond for applications in quantum optics and quantum cryptography.
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Submitted 29 July, 2014;
originally announced July 2014.
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Measurement and modelling of anomalous polarity pulses in a multi-electrode diamond detector
Authors:
J. Forneris,
V. Grilj,
M. Jaksic,
P. Olivero,
F. Picollo,
N. Skukan,
C. Verona,
G. Verona-Rinati,
E. Vittone
Abstract:
In multi-electrode detectors, the motion of excess carriers generated by ionizing radiation induces charge pulses at the electrodes, whose intensities and polarities depend on the geometrical, electrostatic and carriers transport properties of the device. The resulting charge sharing effects may lead to bipolar currents, pulse height defects and anomalous polarity signals affecting the response of…
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In multi-electrode detectors, the motion of excess carriers generated by ionizing radiation induces charge pulses at the electrodes, whose intensities and polarities depend on the geometrical, electrostatic and carriers transport properties of the device. The resulting charge sharing effects may lead to bipolar currents, pulse height defects and anomalous polarity signals affecting the response of the device to ionizing radiation. This latter effect has recently attracted attention in commonly used detector materials, but different interpretations have been suggested, depending on the material, the geometry of the device and the nature of the ionizing radiation. In this letter, we report on the investigation in the formation of anomalous polarity pulses in a multi-electrode diamond detector with buried graphitic electrodes. In particular, we propose a purely electrostatic model based on the Shockley-Ramo-Gunn theory, providing a satisfactory description of anomalous pulses observed in charge collection efficiency maps measured by means of Ion Beam Induced Charge (IBIC) microscopy, and suitable for a general application in multi-electrode devices and detectors.
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Submitted 17 December, 2013;
originally announced December 2013.
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A new diamond biosensor with integrated graphitic microchannels for detecting quantal exocytic events from chromaffin cells
Authors:
Federico Picollo,
Sara Gosso,
Ettore Vittone,
Alberto Pasquarelli,
Emilio Carbone,
Paolo Olivero,
Valentina Carabelli
Abstract:
The quantal release of catecholamines from neuroendocrine cells is a key mechanism which has been investigated with a broad range of materials and devices, among which carbon-based materials such as carbon fibers, diamond-like carbon, carbon nanotubes and nanocrystalline diamond. In the present work we demonstrate that a MeV-ion-microbeam lithographic technique can be successfully employed for the…
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The quantal release of catecholamines from neuroendocrine cells is a key mechanism which has been investigated with a broad range of materials and devices, among which carbon-based materials such as carbon fibers, diamond-like carbon, carbon nanotubes and nanocrystalline diamond. In the present work we demonstrate that a MeV-ion-microbeam lithographic technique can be successfully employed for the fabrication of an all-carbon miniaturized cellular bio-sensor based on graphitic micro-channels embedded in a single-crystal diamond matrix. The device was functionally characterized for the in vitro recording of quantal exocytic events from single chromaffin cells, with high sensitivity and signal-to-noise ratio, opening promising perspectives for the realization of monolithic all-carbon cellular biosensors.
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Submitted 29 August, 2013;
originally announced August 2013.
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Direct measurement and modelling of internal strains in ion-implanted diamond
Authors:
Federico Bosia,
Nicola Argiolas,
Marco Bazzan,
Barbara A. Fairchild,
Andrew D. Greentree,
Desmond W. M. Lau,
Paolo Olivero,
Federico Picollo,
Sergey Rubanov,
Steven Prawer
Abstract:
We present a phenomenological model and Finite Element simulations to describe the depth variation of mass density and strain of ion-implanted single-crystal diamond. Several experiments are employed to validate the approach: firstly, samples implanted with 180 keV B ions at relatively low fluences are characterized using high-resolution X-ray diffraction (HR-XRD); secondly, the mass density varia…
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We present a phenomenological model and Finite Element simulations to describe the depth variation of mass density and strain of ion-implanted single-crystal diamond. Several experiments are employed to validate the approach: firstly, samples implanted with 180 keV B ions at relatively low fluences are characterized using high-resolution X-ray diffraction (HR-XRD); secondly, the mass density variation of a sample implanted with 500 keV He ions well above its amorphization threshold is characterized with Electron Energy Loss Spectroscopy (EELS). At high damage densities, the experimental depth profiles of strain and density display a saturation effect with increasing damage and a shift of the damage density peak towards greater depth values with respect to those predicted by TRIM simulations, which are well accounted for in the model presented here. The model is then further validated by comparing TEM-measured and simulated thickness values of a buried amorphous carbon layer formed at different depths by implantation of 500 keV He ions through a variable-thickness mask to simulate the simultaneous implantation of ions at different energies.
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Submitted 1 March, 2013;
originally announced March 2013.
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Fabrication and electrical characterization of three-dimensional graphitic microchannels in single crystal diamond
Authors:
F. Picollo,
D. Gatto Monticone,
P. Olivero,
B. A. Fairchild,
S. Rubanov,
S. Prawer,
E. Vittone
Abstract:
We report on the systematic characterization of conductive micro-channels fabricated in single-crystal diamond with direct ion microbeam writing. Focused high-energy (~MeV) helium ions are employed to selectively convert diamond with micrometric spatial accuracy to a stable graphitic phase upon thermal annealing, due to the induced structural damage occurring at the end-of-range. A variable-thickn…
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We report on the systematic characterization of conductive micro-channels fabricated in single-crystal diamond with direct ion microbeam writing. Focused high-energy (~MeV) helium ions are employed to selectively convert diamond with micrometric spatial accuracy to a stable graphitic phase upon thermal annealing, due to the induced structural damage occurring at the end-of-range. A variable-thickness mask allows the accurate modulation of the depth at which the microchannels are formed, from several μm deep up to the very surface of the sample. By means of cross-sectional transmission electron microscopy (TEM) we demonstrate that the technique allows the direct writing of amorphous (and graphitic, upon suitable thermal annealing) microstructures extending within the insulating diamond matrix in the three spatial directions, and in particular that buried channels embedded in a highly insulating matrix emerge and electrically connect to the sample surface at specific locations. Moreover, by means of electrical characterization both at room temperature and variable temperature, we investigate the conductivity and the charge-transport mechanisms of microchannels obtained by implantation at different ion fluences and after subsequent thermal processes, demonstrating that upon high-temperature annealing, the channels implanted above a critical damage density convert to a stable graphitic phase. These structures have significant impact for different applications, such as compact ionizing radiation detectors, dosimeters, bio-sensors and more generally diamond-based devices with buried three-dimensional all-carbon electrodes.
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Submitted 13 April, 2012;
originally announced April 2012.