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Wireless LAN sensing with smart antennas
Authors:
Marco Santoboni,
Riccardo Bersan,
Stefano Savazzi,
Alberto Zecchin,
Vittorio Rampa Daniele Piazza
Abstract:
The paper targets the problem of human motion detection using Wireless Local Area Network devices (WiFi) equipped with pattern reconfigurable antennas. Motion sensing is obtained by monitoring the body-induced alterations of the ambient WiFi signals originated from smart antennas supporting the beam-steering technology, thus allowing to channelize the antenna radiation pattern to pre-defined spots…
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The paper targets the problem of human motion detection using Wireless Local Area Network devices (WiFi) equipped with pattern reconfigurable antennas. Motion sensing is obtained by monitoring the body-induced alterations of the ambient WiFi signals originated from smart antennas supporting the beam-steering technology, thus allowing to channelize the antenna radiation pattern to pre-defined spots of interest. We first discuss signal and Channel State Information (CSI) processing and sanitization. Next, we describe the motion detection algorithm based on Angle-of-Arrival (AoA) monitoring. Proposed algorithms are validated experimentally inside a large size smart home environment.
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Submitted 27 April, 2022;
originally announced May 2022.
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Effects of fixatives on myelin molecular order probed with RP-CARS microscopy
Authors:
Giuseppe De Vito,
Paola Parlanti,
Roberta Cecchi,
Stefano Luin,
Valentina Cappello,
Ilaria Tonazzini,
Vincenzo Piazza
Abstract:
When live imaging is not feasible, sample fixation allows preserving the ultrastructure of biological samples for subsequent microscopy analysis. This process could be performed with various methods, each one affecting differently the biological structure of the sample. While these alterations were well-characterized using traditional microscopy, little information is available about the effects o…
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When live imaging is not feasible, sample fixation allows preserving the ultrastructure of biological samples for subsequent microscopy analysis. This process could be performed with various methods, each one affecting differently the biological structure of the sample. While these alterations were well-characterized using traditional microscopy, little information is available about the effects of the fixatives on the spatial molecular orientation of the biological tissue. We tackled this issue by employing Rotating-Polarization Coherent Anti-Stokes Raman Scattering (RP-CARS) microscopy to study the effects of different fixatives on the myelin sub-micrometric molecular order and micrometric morphology. RP-CARS is a novel technique derived from CARS microscopy that allows probing spatial orientation of molecular bonds while maintaining the intrinsic chemical selectivity of CARS microscopy. By characterizing the effects of the fixation procedures, the present work represents a useful guide for the choice of the best fixation technique(s), in particular for polarisation-resolved CARS microscopy. Finally, we show that the combination of paraformaldehyde and glutaraldehyde can be effectively employed as a fixative for RP-CARS microscopy, as long as the effects on the molecular spatial distribution, here characterized, are taken into account.
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Submitted 9 March, 2020;
originally announced March 2020.
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RP-CARS reveals molecular spatial order anomalies in myelin of an animal model of Krabbe disease
Authors:
Giuseppe de Vito,
Valentina Cappello,
Ilaria Tonazzini,
Marco Cecchini,
Vincenzo Piazza
Abstract:
Krabbe disease (KD) is a rare demyelinating sphingolipidosis, often fatal in the first years of life. It is caused by the inactivation of the galactocerebrosidase (GALC) enzyme that causes an increase in the cellular levels of psychosine considered to be at the origin of the tissue-level effects. GALC is inactivated also in the Twitcher (TWI) mouse: a genetic model of KD that is providing importan…
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Krabbe disease (KD) is a rare demyelinating sphingolipidosis, often fatal in the first years of life. It is caused by the inactivation of the galactocerebrosidase (GALC) enzyme that causes an increase in the cellular levels of psychosine considered to be at the origin of the tissue-level effects. GALC is inactivated also in the Twitcher (TWI) mouse: a genetic model of KD that is providing important insights into the understating of the pathogenetic process and the development of possible treatments. In this article an innovative optical technique, RP-CARS, is proposed as a tool to study the degree of order of the CH2 bonds inside the myelin sheaths of TWI-mice sciatic-nerve fibres. RP-CARS, a recently developed variation of CARS microscopy, is able to combine the intrinsic chemical selectivity of CARS microscopy with molecular-bond-spatial-orientation sensibility. This is the first time RP-CARS is applied to the study of a genetic model of a pathology, leading to the demonstration of a post-onset progressive spatial disorganization of the myelin CH2 bonds. The presented result could be of great interest for a deeper understanding of the pathogenic mechanisms underlying the human KD and, moreover, it is an additional proof of the experimental validity of this microscopy technique.
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Submitted 8 March, 2020;
originally announced March 2020.
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Thermal decomposition and chemical vapor deposition: a comparative study of multi-layer growth of graphene on SiC(000-1)
Authors:
D. Convertino,
A. Rossi,
V. Miseikis,
V. Piazza,
C. Coletti
Abstract:
This work presents a comparison of the structural, chemical and electronic properties of multi-layer graphene grown on SiC(000-1) by using two different growth approaches: thermal decomposition and chemical vapor deposition (CVD). The topography of the samples was investigated by using atomic force microscopy (AFM), and scanning electron microscopy (SEM) was performed to examine the sample on a la…
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This work presents a comparison of the structural, chemical and electronic properties of multi-layer graphene grown on SiC(000-1) by using two different growth approaches: thermal decomposition and chemical vapor deposition (CVD). The topography of the samples was investigated by using atomic force microscopy (AFM), and scanning electron microscopy (SEM) was performed to examine the sample on a large scale. Raman spectroscopy was used to assess the crystallinity and electronic behavior of the multi-layer graphene and to estimate its thickness in a non-invasive way. While the crystallinity of the samples obtained with the two different approaches is comparable, our results indicate that the CVD method allows for a better thickness control of the grown graphene.
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Submitted 2 May, 2018;
originally announced May 2018.
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Local anodic oxidation on hydrogen-intercalated graphene layers: oxide composition analysis and role of the silicon carbide substrate
Authors:
Francesco Colangelo,
Vincenzo Piazza,
Camilla Coletti,
Stefano Roddaro,
Fabio Beltram,
Pasqualantonio **ue
Abstract:
We investigate nanoscale local anodic oxidation (LAO) on hydrogen-intercalated graphene grown by controlled sublimation of silicon carbide (SiC). Scanning probe microscopy (SPM) was used as a lithographic and characterization tool in order to investigate the local properties of the nanofabricated structures. The anomalous thickness observed after the graphene oxidation process is linked to the imp…
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We investigate nanoscale local anodic oxidation (LAO) on hydrogen-intercalated graphene grown by controlled sublimation of silicon carbide (SiC). Scanning probe microscopy (SPM) was used as a lithographic and characterization tool in order to investigate the local properties of the nanofabricated structures. The anomalous thickness observed after the graphene oxidation process is linked to the impact of LAO on the substrate. Micro-Raman spectroscopy was employed to demonstrate the presence of two oxidation regimes depending on the applied bias. We show that partial and total etching of monolayer graphene can be achieved by tuning the bias voltage during LAO. Finally, a complete compositional characterization was achieved by scanning electron microscopy and energy dispersive spectroscopy (EDS).
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Submitted 2 May, 2018;
originally announced May 2018.
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Effect of Scatterering on Coherent Anti-Stokes Raman Scattering (CARS) signals
Authors:
Janaka C. Ranasinghesagara,
Giuseppe de Vito,
Vincenzo Piazza,
Eric O. Potma,
Vasan Venugopalan
Abstract:
We develop a computational framework to examine the factors responsible for scattering-induced distortions of coherent anti-Stokes Raman scattering (CARS) signals in turbid samples. We apply the Huygens-Fresnel Wave-based Electric Field Superposition (HF-WEFS) method combined with the radiating dipole approximation to compute the effects of scattering-induced distortions of focal excitation fields…
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We develop a computational framework to examine the factors responsible for scattering-induced distortions of coherent anti-Stokes Raman scattering (CARS) signals in turbid samples. We apply the Huygens-Fresnel Wave-based Electric Field Superposition (HF-WEFS) method combined with the radiating dipole approximation to compute the effects of scattering-induced distortions of focal excitation fields on the far-field CARS signal. We analyze the effect of spherical scatterers, placed in the vicinity of the focal volume, on the CARS signal emitted by different objects (2μm diameter solid sphere, 2μm diameter myelin cylinder and 2μm diameter myelin tube). We find that distortions in the CARS signals arise not only from attenuation of the focal field but also from scattering-induced changes in the spatial phase that modifies the angular distribution of the CARS emission. Our simulations further show that CARS signal attenuation can be minimized by using a high numerical aperture condenser. Moreover, unlike the CARS intensity image, CARS images formed by taking the ratio of CARS signals obtained using x- and y-polarized input fields is relatively insensitive to the effects of spherical scatterers. Our computational framework provide a mechanistic approach to characterizing scattering-induced distortions in coherent imaging of turbid media and may inspire bottom-up approaches for adaptive optical methods for image correction.
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Submitted 17 March, 2017; v1 submitted 23 November, 2016;
originally announced November 2016.
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Scalable synthesis of WS2 on graphene and h-BN: an all-2D platform for light-matter transduction
Authors:
Antonio Rossi,
Holger Buech,
Carmine Di Rienzo,
Vaidotas Miseikis,
Domenica Convertino,
Ameer Al-Temimy,
Valerio Voliani,
Mauro Gemmi,
Vincenzo Piazza,
Camilla Coletti
Abstract:
By exhibiting a measurable bandgap and exotic valley physics, atomically-thick tungsten disulfide (WS2) offers exciting prospects for optoelectronic applications. The synthesis of continuous WS2 films on other two-dimensional (2D) materials would greatly facilitate the implementation of novel all-2D photoactive devices. In this work we demonstrate the scalable growth of WS2 on graphene and hexagon…
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By exhibiting a measurable bandgap and exotic valley physics, atomically-thick tungsten disulfide (WS2) offers exciting prospects for optoelectronic applications. The synthesis of continuous WS2 films on other two-dimensional (2D) materials would greatly facilitate the implementation of novel all-2D photoactive devices. In this work we demonstrate the scalable growth of WS2 on graphene and hexagonal boron nitride (h-BN) via a chemical vapor deposition (CVD) approach. Spectroscopic and microscopic analysis reveal that the film is bilayer-thick, with local monolayer inclusions. Photoluminescence measurements show a remarkable conservation of polarization at room temperature peaking 74% for the entire WS2 film. Furthermore, we present a scalable bottom-up approach for the design of photoconductive and photoemitting patterns.
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Submitted 18 August, 2016;
originally announced August 2016.
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Rapid and catalyst-free CVD growth of graphene on hBN
Authors:
Neeraj Mishra,
Vaidotas Miseikis,
Domenica Convertino,
Mauro Gemmi,
Vincenzo Piazza,
Camilla Coletti
Abstract:
Recently, hexagonal boron nitride (h-BN) has been shown to act as an ideal substrate to graphene by greatly improving the material transport properties thanks to its atomically flat surface, low interlayer electronic coupling and almost perfect reticular matching. Chemical vapour deposition (CVD) is presently considered the most scalable approach to grow graphene directly on h-BN. However, for the…
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Recently, hexagonal boron nitride (h-BN) has been shown to act as an ideal substrate to graphene by greatly improving the material transport properties thanks to its atomically flat surface, low interlayer electronic coupling and almost perfect reticular matching. Chemical vapour deposition (CVD) is presently considered the most scalable approach to grow graphene directly on h-BN. However, for the catalyst-free approach, poor control over the shape and crystallinity of the graphene grains and low growth rates are typically reported. In this work we investigate the crystallinity of differently shaped grains and identify a path towards a real van der Waals epitaxy of graphene on h-BN by adopting a catalyst-free CVD process. We demonstrate the polycrystalline nature of circular-shaped pads and attribute the stemming of different oriented grains to airborne contamination of the h-BN flakes. We show that single-crystal grains with six-fold symmetry can be obtained by adopting high hydrogen partial pressures during growth. Notably, growth rates as high as 100 nm/min are obtained by optimizing growth temperature and pressure. The possibility of synthesizing single-crystal graphene on h-BN with appreciable growth rates by adopting a simple CVD approach is a step towards an increased accessibility of this promising van der Waals heterostructure.
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Submitted 28 July, 2016; v1 submitted 27 July, 2016;
originally announced July 2016.
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Femtosecond-laser-pulse characterization and optimization for CARS microscopy
Authors:
Vincenzo Piazza,
Giuseppe de Vito,
Elmira Farrokhtakin,
Gianni Ciofani,
Virgilio Mattoli
Abstract:
We present a simple method and its experimental implementation to completely determine the characteristics of the pump-and-probe pulse and the Stokes pulse in a coherent anti-Stokes Raman scattering microscope at sample level without additional autocorrelators. Our approach exploits the delay line, ubiquitous in such microscopes, to perform a convolution of the pump-and-probe and Stokes pulses as…
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We present a simple method and its experimental implementation to completely determine the characteristics of the pump-and-probe pulse and the Stokes pulse in a coherent anti-Stokes Raman scattering microscope at sample level without additional autocorrelators. Our approach exploits the delay line, ubiquitous in such microscopes, to perform a convolution of the pump-and-probe and Stokes pulses as a function of their relative delay and it is based on the detection of the photons emitted from an appropriate non-linear sample. The analysis of the non-resonant four-wave-mixing and sum-frequency-generation signals allows retrieving the pulse duration on the sample and the chirp of each pulse. This knowledge is crucial in maximizing the spectral-resolution and contrast in CARS imaging.
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Submitted 25 January, 2016;
originally announced January 2016.
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The role of water in the preparation and stabilization of high quality phosphorene flakes
Authors:
Manuel Serrano-Ruiz,
Maria Caporali,
Andrea Ienco,
Vincenzo Piazza,
Stefan Heun,
Maurizio Peruzzini
Abstract:
Water is believed to be harmful for the stability of phosphorene.On the contrary, the presence of small amount of water allows the synthesis of high-quality material in liquid exfoliation of black phosphorus using dimethylsulfoxide as solvent. A phosphorus/water molar ratio between 1.5 and 14 maximizes the quality of the phosphorene flakes and their stability.
Water is believed to be harmful for the stability of phosphorene.On the contrary, the presence of small amount of water allows the synthesis of high-quality material in liquid exfoliation of black phosphorus using dimethylsulfoxide as solvent. A phosphorus/water molar ratio between 1.5 and 14 maximizes the quality of the phosphorene flakes and their stability.
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Submitted 13 November, 2015;
originally announced November 2015.
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Rapid CVD growth of millimetre-sized single crystal graphene using a cold-wall reactor
Authors:
Vaidotas Miseikis,
Domenica Convertino,
Neeraj Mishra,
Mauro Gemmi,
Torge Mashoff,
Stefan Heun,
Niloofar Haghighian,
Francesco Bisio,
Maurizio Canepa,
Vincenzo Piazza,
Camilla Coletti
Abstract:
In this work we present a simple pathway to obtain large single-crystal graphene on copper (Cu) foils with high growth rates using a commercially available cold-wall chemical vapour deposition (CVD) reactor. We show that graphene nucleation density is drastically reduced and crystal growth is accelerated when: i) using ex-situ oxidised foils; ii) performing annealing in an inert atmosphere prior t…
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In this work we present a simple pathway to obtain large single-crystal graphene on copper (Cu) foils with high growth rates using a commercially available cold-wall chemical vapour deposition (CVD) reactor. We show that graphene nucleation density is drastically reduced and crystal growth is accelerated when: i) using ex-situ oxidised foils; ii) performing annealing in an inert atmosphere prior to growth; iii) enclosing the foils to lower the precursor im**ement flux during growth. Growth rates as high as 14.7 and 17.5 micrometers per minute are obtained on flat and folded foils, respectively. Thus, single-crystal grains with lateral size of about one millimetre can be obtained in just one hour. The samples are characterised by optical microscopy, scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy as well as selected area electron diffraction (SAED) and low-energy electron diffraction (LEED), which confirm the high quality and homogeneity of the films. The development of a process for the quick production of large grain graphene in a commonly used commercial CVD reactor is a significant step towards an increased accessibility to millimetre-sized graphene crystals.
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Submitted 26 January, 2015;
originally announced January 2015.
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Increasing the active surface of titanium islands on graphene by nitrogen sputtering
Authors:
T. Mashoff,
D. Convertino,
V. Miseikis,
C. Coletti,
V. Piazza,
V. Tozzini,
F. Beltram,
S. Heun
Abstract:
Titanium-island formation on graphene as a function of defect density is investigated. When depositing titanium on pristine graphene, titanium atoms cluster and form islands with an average diameter of about 10nm and an average height of a few atomic layers. We show that if defects are introduced in the graphene by ion bombardment, the mobility of the deposited titanium atoms is reduced and the av…
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Titanium-island formation on graphene as a function of defect density is investigated. When depositing titanium on pristine graphene, titanium atoms cluster and form islands with an average diameter of about 10nm and an average height of a few atomic layers. We show that if defects are introduced in the graphene by ion bombardment, the mobility of the deposited titanium atoms is reduced and the average diameter of the islands decreases to 5nm with monoatomic height. This results in an optimized coverage for hydrogen storage applications since the actual titanium surface available per unit graphene area is significantly increased.
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Submitted 2 February, 2015; v1 submitted 10 October, 2014;
originally announced October 2014.
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Bilayer-induced asymmetric quantum Hall effect in epitaxial graphene
Authors:
Andrea Iagallo,
Shinichi Tanabe,
Stefano Roddaro,
Makoto Takamura,
Yoshiaki Sekine,
Hiroki Hibino,
Vaidotas Miseikis,
Camilla Coletti,
Vincenzo Piazza,
Fabio Beltram,
Stefan Heun
Abstract:
The transport properties of epitaxial graphene on SiC(0001) at quantizing magnetic fields are investigated. Devices patterned perpendicularly to SiC terraces clearly exhibit bilayer inclusions distributed along the substrate step edges. We show that the transport properties in the quantum Hall regime are heavily affected by the presence of bilayer inclusions, and observe a significant departure fr…
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The transport properties of epitaxial graphene on SiC(0001) at quantizing magnetic fields are investigated. Devices patterned perpendicularly to SiC terraces clearly exhibit bilayer inclusions distributed along the substrate step edges. We show that the transport properties in the quantum Hall regime are heavily affected by the presence of bilayer inclusions, and observe a significant departure from the conventional quantum Hall characteristics. A quantitative model involving enhanced inter-channel scattering mediated by the presence of bilayer inclusions is presented that successfully explains the observed symmetry properties.
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Submitted 14 October, 2014; v1 submitted 8 October, 2014;
originally announced October 2014.
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Large thermal biasing of individual gated nanostructures
Authors:
Stefano Roddaro,
Daniele Ercolani,
Mian Akif Safeen,
Francesco Rossella,
Vincenzo Piazza,
Francesco Giazotto,
Lucia Sorba,
Fabio Beltram
Abstract:
We demonstrate a novel nanoheating scheme that yields very large and uniform temperature gradients up to about 1K every 100nm, in an architecture which is compatible with the field-effect control of the nanostructure under test. The temperature gradients demonstrated largely exceed those typically obtainable with standard resistive heaters fabricated on top of the oxide layer. The nanoheating plat…
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We demonstrate a novel nanoheating scheme that yields very large and uniform temperature gradients up to about 1K every 100nm, in an architecture which is compatible with the field-effect control of the nanostructure under test. The temperature gradients demonstrated largely exceed those typically obtainable with standard resistive heaters fabricated on top of the oxide layer. The nanoheating platform is demonstrated in the specific case of a short-nanowire device.
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Submitted 8 January, 2014; v1 submitted 10 December, 2013;
originally announced December 2013.
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The Influence of Graphene Curvature on Hydrogen Adsorption: Towards Hydrogen Storage Devices
Authors:
Sarah Goler,
Camilla Coletti,
Valentina Tozzini,
Vincenzo Piazza,
Torge Mashoff,
Fabio Beltram,
Vittorio Pellegrini,
Stefan Heun
Abstract:
The ability of atomic hydrogen to chemisorb on graphene makes the latter a promising material for hydrogen storage. Based on scanning tunneling microscopy techniques, we report on site-selective adsorption of atomic hydrogen on convexly curved regions of monolayer graphene grown on SiC(0001). This system exhibits an intrinsic curvature owing to the interaction with the substrate. We show that at l…
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The ability of atomic hydrogen to chemisorb on graphene makes the latter a promising material for hydrogen storage. Based on scanning tunneling microscopy techniques, we report on site-selective adsorption of atomic hydrogen on convexly curved regions of monolayer graphene grown on SiC(0001). This system exhibits an intrinsic curvature owing to the interaction with the substrate. We show that at low coverage hydrogen is found on convex areas of the graphene lattice. No hydrogen is detected on concave regions. These findings are in agreement with theoretical models which suggest that both binding energy and adsorption barrier can be tuned by controlling the local curvature of the graphene lattice. This curvature-dependence combined with the known graphene flexibility may be exploited for storage and controlled release of hydrogen at room temperature making it a valuable candidate for the implementation of hydrogen-storage devices.
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Submitted 28 November, 2013;
originally announced November 2013.
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High-contrast Aharonov-Bohm oscillations in the acoustoelectric transport regime
Authors:
E. Strambini,
E. Ligarò,
F. Beltram,
H. Beere,
C. A. Nicoll,
D. A. Ritchie,
V. Piazza
Abstract:
Phase-coherent acoustoelectric transport is reported.Aharonov-Bohm oscillations in the acoustoelectric current with visibility exceeding 100% were observed in mesoscopic GaAs rings as a function of an external magnetic field at cryogenic temperatures. A theoretical analysis of the acoustoelectric transport in ballistic devices is proposed to model experimental observations. Our findings highlight…
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Phase-coherent acoustoelectric transport is reported.Aharonov-Bohm oscillations in the acoustoelectric current with visibility exceeding 100% were observed in mesoscopic GaAs rings as a function of an external magnetic field at cryogenic temperatures. A theoretical analysis of the acoustoelectric transport in ballistic devices is proposed to model experimental observations. Our findings highlight a close analogy between acoustoelectric transport and thermoelectric properties in ballistic devices.
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Submitted 5 September, 2013;
originally announced September 2013.
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Revealing the atomic structure of the buffer layer between SiC(0001) and epitaxial graphene
Authors:
Sarah Goler,
Camilla Coletti,
Vincenzo Piazza,
Pasqualantonio **ue,
Francesco Colangelo,
Vittorio Pellegrini,
Konstantin V. Emtsev,
Stiven Forti,
Ulrich Starke,
Fabio Beltram,
Stefan Heun
Abstract:
On the SiC(0001) surface (the silicon face of SiC), epitaxial graphene is obtained by sublimation of Si from the substrate. The graphene film is separated from the bulk by a carbon-rich interface layer (hereafter called the buffer layer) which in part covalently binds to the substrate. Its structural and electronic properties are currently under debate. In the present work we report scanning tunne…
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On the SiC(0001) surface (the silicon face of SiC), epitaxial graphene is obtained by sublimation of Si from the substrate. The graphene film is separated from the bulk by a carbon-rich interface layer (hereafter called the buffer layer) which in part covalently binds to the substrate. Its structural and electronic properties are currently under debate. In the present work we report scanning tunneling microscopy (STM) studies of the buffer layer and of quasi-free-standing monolayer graphene (QFMLG) that is obtained by decoupling the buffer layer from the SiC(0001) substrate by means of hydrogen intercalation. Atomic resolution STM images of the buffer layer reveal that, within the periodic structural corrugation of this interfacial layer, the arrangement of atoms is topologically identical to that of graphene. After hydrogen intercalation, we show that the resulting QFMLG is relieved from the periodic corrugation and presents no detectable defect sites.
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Submitted 2 August, 2013; v1 submitted 21 November, 2011;
originally announced November 2011.
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Lasing in planar semiconductor diodes
Authors:
Giorgio De Simoni,
Lukas Mahler,
Vincenzo Piazza,
Alessandro Tredicucci,
Christine A. Nicoll,
Harvey E. Beere,
David A. Ritchie,
Fabio Beltram
Abstract:
We present a planar laser diode based on a simple fabrication scheme compatible with virtually any geometry accessible by standard semiconductor lithography technique. We show that our lasers exhibit ~1 GHz -3dB-modulation-bandwidth already in this prototypical implementation. Directions for a significant speed increase are discussed.
We present a planar laser diode based on a simple fabrication scheme compatible with virtually any geometry accessible by standard semiconductor lithography technique. We show that our lasers exhibit ~1 GHz -3dB-modulation-bandwidth already in this prototypical implementation. Directions for a significant speed increase are discussed.
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Submitted 7 November, 2011;
originally announced November 2011.
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Anti-bunched photons from a lateral light-emitting diode
Authors:
Tommaso Lunghi,
Giorgio De Simoni,
Vincenzo Piazza,
Christine A. Nicoll,
Harvey E. Beere,
David A. Ritchie,
Fabio Beltram
Abstract:
We demonstrate anti-bunched emission from a lateral-light emitting diode. Sub-Poissonian emission statistic, with a g$^{(2)}$(0)=0.7, is achieved at cryogenic temperature in the pulsed low-current regime, by exploiting electron injection through shallow impurities located in the diode depletion region. Thanks to its simple fabrication scheme and to its modulation bandwidth in the GHz range, we bel…
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We demonstrate anti-bunched emission from a lateral-light emitting diode. Sub-Poissonian emission statistic, with a g$^{(2)}$(0)=0.7, is achieved at cryogenic temperature in the pulsed low-current regime, by exploiting electron injection through shallow impurities located in the diode depletion region. Thanks to its simple fabrication scheme and to its modulation bandwidth in the GHz range, we believe our devices are an appealing substitute for highly-attenuated lasers in existing quantum-key-distribution systems. Our devices outperform strongly-attenuated lasers in terms of multi-photon emission events and can therefore lead to a significant security improvement in existing quantum key distribution systems.
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Submitted 22 September, 2011;
originally announced September 2011.
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Self-assembly and electron-beam-induced direct etching of suspended graphene nanostructures
Authors:
Sarah Goler,
Vincenzo Piazza,
Stefano Roddaro,
Vittorio Pellegrini,
Fabio Beltram,
Pasqualantonio **ue
Abstract:
We report on suspended single-layer graphene deposition by a transfer-printing approach based on polydimethylsiloxane stamps. The transfer printing method allows the exfoliation of graphite flakes from a bulk graphite sample and their residue-free deposition on a silicon dioxide substrate. This deposition system creates a blistered graphene surface due to strain induced by the transfer process its…
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We report on suspended single-layer graphene deposition by a transfer-printing approach based on polydimethylsiloxane stamps. The transfer printing method allows the exfoliation of graphite flakes from a bulk graphite sample and their residue-free deposition on a silicon dioxide substrate. This deposition system creates a blistered graphene surface due to strain induced by the transfer process itself. Single-layer-graphene deposition and its "blistering" on the substrate are demonstrated by a combination of Raman spectroscopy, scanning electron microscopy and atomic-force microscopy measurements. Finally, we demonstrate that blister-like suspended graphene are self-supporting single-layer structures and can be flattened by employing a spatially-resolved direct-lithography technique based on electron-beam induced etching.
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Submitted 28 May, 2011;
originally announced May 2011.
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Delocalized-localized transition in a semiconductor two-dimensional honeycomb lattice
Authors:
G. De Simoni,
A. Singha,
M. Gibertini,
B. Karmakar,
M. Polini,
V. Piazza,
L. N. Pfeiffer,
K. W. West,
F. Beltram,
V. Pellegrini
Abstract:
We report the magneto-transport properties of a two-dimensional electron gas in a modulation-doped AlGaAs/GaAs heterostructure subjected to a lateral potential with honeycomb geometry. Periodic oscillations of the magneto-resistance and a delocalized-localized transition are shown by applying a gate voltage. We argue that electrons in such artificial-graphene lattices offer a promising approach fo…
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We report the magneto-transport properties of a two-dimensional electron gas in a modulation-doped AlGaAs/GaAs heterostructure subjected to a lateral potential with honeycomb geometry. Periodic oscillations of the magneto-resistance and a delocalized-localized transition are shown by applying a gate voltage. We argue that electrons in such artificial-graphene lattices offer a promising approach for the simulation of quantum phases dictated by Coulomb interactions.
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Submitted 19 July, 2010;
originally announced July 2010.
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Electronic implementations of Interaction-Free Measurements
Authors:
L. Chirolli,
E. Strambini,
V. Giovannetti,
F. Taddei,
V. Piazza,
R. Fazio,
F. Beltram,
G. Burkard
Abstract:
Three different implementations of interaction-free measurements (IFMs) in solid-state nanodevices are discussed. The first one is based on a series of concatenated Mach-Zehnder interferometers, in analogy to optical-IFM setups. The second one consists of a single interferometer and concatenation is achieved in the time domain making use of a quantized electron emitter. The third implementation co…
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Three different implementations of interaction-free measurements (IFMs) in solid-state nanodevices are discussed. The first one is based on a series of concatenated Mach-Zehnder interferometers, in analogy to optical-IFM setups. The second one consists of a single interferometer and concatenation is achieved in the time domain making use of a quantized electron emitter. The third implementation consists of an asymmetric Aharonov-Bohm ring. For all three cases we show that the presence of a dephasing source acting on one arm of the interferometer can be detected without degrading the coherence of the measured current. Electronic implementations of IFMs in nanoelectronics may play a fundamental role as very accurate and noninvasive measuring schemes for quantum devices.
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Submitted 12 April, 2010;
originally announced April 2010.
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Coherent detection of electron dephasing
Authors:
E. Strambini,
L. Chirolli,
V. Giovannetti,
F. Taddei,
R. Fazio,
V. Piazza,
F. Beltram
Abstract:
We show that an Aharonov-Bohm (AB) ring with asymmetric electron injection can act as a coherent detector of electron dephasing. The presence of a dephasing source in one of the two arms of a moderately-to-highly asymmetric ring changes the response of the system from total reflection to complete transmission while preserving the coherence of the electrons propagating from the ring, even for str…
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We show that an Aharonov-Bohm (AB) ring with asymmetric electron injection can act as a coherent detector of electron dephasing. The presence of a dephasing source in one of the two arms of a moderately-to-highly asymmetric ring changes the response of the system from total reflection to complete transmission while preserving the coherence of the electrons propagating from the ring, even for strong dephasing. We interpret this phenomenon as an implementation of an interaction-free measurement.
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Submitted 11 September, 2009;
originally announced September 2009.
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Impact of classical forces and decoherence in multi-terminal Aharonov-Bohm networks
Authors:
E. Strambini,
V. Piazza,
G. Biasiol,
L. Sorba,
F. Beltram
Abstract:
Multi-terminal Aharonov-Bohm (AB) rings are ideal building blocks for quantum networks (QNs) thanks to their ability to map input states into controlled coherent superpositions of output states. We report on experiments performed on three-terminal GaAs/Al_(x)Ga_(1-x)As AB devices and compare our results with a scattering-matrix model including Lorentz forces and decoherence. Our devices were stu…
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Multi-terminal Aharonov-Bohm (AB) rings are ideal building blocks for quantum networks (QNs) thanks to their ability to map input states into controlled coherent superpositions of output states. We report on experiments performed on three-terminal GaAs/Al_(x)Ga_(1-x)As AB devices and compare our results with a scattering-matrix model including Lorentz forces and decoherence. Our devices were studied as a function of external magnetic field (B) and gate voltage at temperatures down to 350 mK. The total output current from two terminals while applying a small bias to the third lead was found to be symmetric with respect to B with AB oscillations showing abrupt phase jumps between 0 and pi at different values of gate voltage and at low magnetic fields, reminiscent of the phase-rigidity constraint due to Onsager-Casimir relations. Individual outputs show quasi-linear dependence of the oscillation phase on the external electric field. We emphasize that a simple scattering-matrix approach can not model the observed behavior and propose an improved description that can fully describe the observed phenomena. Furthermore, we shall show that our model can be successfully exploited to determine the range of experimental parameters that guarantee a minimum oscillation visibility, given the geometry and coherence length of a QN.
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Submitted 15 April, 2009;
originally announced April 2009.
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Acoustoelectric luminescence from a field-effect n-i-p lateral junction
Authors:
Giorgio De Simoni,
Vincenzo Piazza,
Lucia Sorba,
Giorgio Biasiol,
Fabio Beltram
Abstract:
A surface-acoustic-wave (SAW) driven light-emitting-diode structure that can implement a single-photon-source for quantum-cryptography applications is demonstrated. Our lateral n-i-p junction is realized starting from an undoped GaAs/AlGaAs quantum well by gating. It incorporates interdigitated transducers for SAW generation and lateral gates for current control. We demonstrate acoustoelectric t…
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A surface-acoustic-wave (SAW) driven light-emitting-diode structure that can implement a single-photon-source for quantum-cryptography applications is demonstrated. Our lateral n-i-p junction is realized starting from an undoped GaAs/AlGaAs quantum well by gating. It incorporates interdigitated transducers for SAW generation and lateral gates for current control. We demonstrate acoustoelectric transport and SAW-driven electroluminescence. The acoustoelectric current can be controlled down to complete pinch-off by means of the lateral gates.
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Submitted 6 March, 2009;
originally announced March 2009.
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Colors Of Graphite On Silicon Dioxide
Authors:
S. Roddaro,
P. **ue,
V. Piazza,
V. Pellegrini,
F. Beltram
Abstract:
Monoatomic layers of graphite can be electrically contacted and used as building blocks for new promising devices. These experiment are today possible thanks to the fact that very thin graphite can be identified on a dielectric substrate using a simple optical microscope. We investigate the mechanism behind the strong visibility of graphite and we discuss the importance of the substrate and of t…
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Monoatomic layers of graphite can be electrically contacted and used as building blocks for new promising devices. These experiment are today possible thanks to the fact that very thin graphite can be identified on a dielectric substrate using a simple optical microscope. We investigate the mechanism behind the strong visibility of graphite and we discuss the importance of the substrate and of the microcope objective used for the imaging.
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Submitted 3 May, 2007;
originally announced May 2007.
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Acoustic charge transport in n-i-n three terminal device
Authors:
Marco Cecchini,
Giorgio De Simoni,
Vincenzo Piazza,
Fabio Beltram,
H. E. Beere,
D. A. Ritchie
Abstract:
We present an unconventional approach to realize acoustic charge transport devices that takes advantage from an original input region geometry in place of standard Ohmic input contacts. Our scheme is based on a n-i-n lateral junction as electron injector, an etched intrinsic channel, a standard Ohmic output contact and a pair of in-plane gates. We show that surface acoustic waves are able to pic…
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We present an unconventional approach to realize acoustic charge transport devices that takes advantage from an original input region geometry in place of standard Ohmic input contacts. Our scheme is based on a n-i-n lateral junction as electron injector, an etched intrinsic channel, a standard Ohmic output contact and a pair of in-plane gates. We show that surface acoustic waves are able to pick up electrons from a current flowing through the n-i-n junction and steer them toward the output contact. Acoustic charge transport was studied as a function of the injector current and bias, the SAW power and at various temperatures. The possibility to modulate the acoustoelectric current by means of lateral in-plane gates is also discussed. The main advantage of our approach relies on the possibility to drive the n-i-n injector by means of both voltage or current sources, thus allowing to sample and process voltage and current signals as well.
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Submitted 25 October, 2005;
originally announced October 2005.
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Demonstration of an electrostatic-shielded cantilever
Authors:
P. **ue,
V. Piazza,
P. Baschieri,
C. Ascoli,
C. Menozzi,
A. Alessandrini,
P. Facci
Abstract:
The fabrication and performances of cantilevered probes with reduced parasitic capacitance starting from a commercial Si3N4 cantilever chip is presented. Nanomachining and metal deposition induced by focused ion beam techniques were employed in order to modify the original insulating pyramidal tip and insert a conducting metallic tip. Two parallel metallic electrodes deposited on the original ca…
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The fabrication and performances of cantilevered probes with reduced parasitic capacitance starting from a commercial Si3N4 cantilever chip is presented. Nanomachining and metal deposition induced by focused ion beam techniques were employed in order to modify the original insulating pyramidal tip and insert a conducting metallic tip. Two parallel metallic electrodes deposited on the original cantilever arms are employed for tip biasing and as ground plane in order to minimize the electrostatic force due to the capacitive interaction between cantilever and sample surface. Excitation spectra and force-to-distance characterization are shown with different electrode configurations. Applications of this scheme in electrostatic force microscopy, Kelvin probe microscopy and local anodic oxidation is discussed.
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Submitted 30 August, 2005;
originally announced August 2005.
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Surface acoustic wave-induced electroluminescence intensity oscillation in planar light-emitting devices
Authors:
Marco Cecchini,
Vincenzo Piazza,
Fabio Beltram,
D. G. Gevaux,
M. B. Ward,
A. J. Shields,
H. E. Beere,
D. A. Ritchie
Abstract:
Electroluminescence emission from surface acoustic wave-driven light-emitting diodes (SAWLEDs) is studied by means of time-resolved techniques. We show that the intensity of the SAW-induced electroluminescence is modulated at the SAW frequency (~1 GHz), demonstrating electron injection into the p-type region synchronous with the SAW wavefronts.
Electroluminescence emission from surface acoustic wave-driven light-emitting diodes (SAWLEDs) is studied by means of time-resolved techniques. We show that the intensity of the SAW-induced electroluminescence is modulated at the SAW frequency (~1 GHz), demonstrating electron injection into the p-type region synchronous with the SAW wavefronts.
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Submitted 7 January, 2005;
originally announced January 2005.
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Coulomb-Blockade directional coupler
Authors:
P. **ue,
V. Piazza,
F. Beltram,
I. Farrer,
D. A. Ritchie,
M. Pepper
Abstract:
A tunable directional coupler based on Coulomb Blockade effect is presented. Two electron waveguides are coupled by a quantum dot to an injector waveguide. Electron confinement is obtained by surface Schottky gates on single GaAs/AlGaAs heterojunction. Magneto-electrical measurements down to 350 mK are presented and large transconductance oscillations are reported on both outputs up to 4.2 K. Ex…
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A tunable directional coupler based on Coulomb Blockade effect is presented. Two electron waveguides are coupled by a quantum dot to an injector waveguide. Electron confinement is obtained by surface Schottky gates on single GaAs/AlGaAs heterojunction. Magneto-electrical measurements down to 350 mK are presented and large transconductance oscillations are reported on both outputs up to 4.2 K. Experimental results are interpreted in terms of Coulomb Blockade effect and the relevance of the present design strategy for the implementation of an electronic multiplexer is underlined.
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Submitted 18 December, 2004;
originally announced December 2004.
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Low field magnetotransport in strained Si/SiGe cavities
Authors:
G. Scappucci,
L. Di Gaspare,
F. Evangelisti,
E. Giovine,
A. Notargiacomo,
R. Leoni,
V. Piazza,
P. **ue,
F. Beltram
Abstract:
Low field magnetotransport revealing signatures of ballistic transport effects in strained Si/SiGe cavities is investigated. We fabricated strained Si/SiGe cavities by confining a high mobility Si/SiGe 2DEG in a bended nanowire geometry defined by electron-beam lithography and reactive ion etching. The main features observed in the low temperature magnetoresistance curves are the presence of a z…
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Low field magnetotransport revealing signatures of ballistic transport effects in strained Si/SiGe cavities is investigated. We fabricated strained Si/SiGe cavities by confining a high mobility Si/SiGe 2DEG in a bended nanowire geometry defined by electron-beam lithography and reactive ion etching. The main features observed in the low temperature magnetoresistance curves are the presence of a zero-field magnetoresistance peak and of an oscillatory structure at low fields. By adopting a simple geometrical model we explain the oscillatory structure in terms of electron magnetic focusing. A detailed examination of the zero-field peak lineshape clearly shows deviations from the predictions of ballistic weak localization theory.
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Submitted 16 November, 2004;
originally announced November 2004.
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Surface-acoustic-wave driven planar light-emitting device
Authors:
Marco Cecchini,
Giorgio De Simoni,
Vincenzo Piazza,
Fabio Beltram,
H. E. Beere,
D. A. Ritchie
Abstract:
Electroluminescence emission controlled by means of surface acoustic waves (SAWs) in planar light-emitting diodes (pLEDs) is demonstrated. Interdigital transducers for SAW generation were integrated onto pLEDs fabricated following the scheme which we have recently developed. Current-voltage, light-voltage and photoluminescence characteristics are presented at cryogenic temperatures. We argue tha…
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Electroluminescence emission controlled by means of surface acoustic waves (SAWs) in planar light-emitting diodes (pLEDs) is demonstrated. Interdigital transducers for SAW generation were integrated onto pLEDs fabricated following the scheme which we have recently developed. Current-voltage, light-voltage and photoluminescence characteristics are presented at cryogenic temperatures. We argue that this scheme represents a valuable building block for advanced optoelectronic architectures.
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Submitted 15 March, 2004;
originally announced March 2004.
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High-performance planar light-emitting diode
Authors:
Marco Cecchini,
Vincenzo Piazza,
Fabio Beltram,
Marco Lazzarino,
M. B. Ward,
A. J. Shields,
H. E. Beere,
D. A. Ritchie
Abstract:
Planar light-emitting diodes (LEDs) fabricated within a single high-mobility quantum well are demonstrated. Our approach leads to a dramatic reduction of radiative lifetime and junction area with respect to conventional vertical LEDs, promising very high-frequency device operation. Devices were fabricated by UV lithography and wet chemical etching starting from p-type modulation-doped AlGaAs/GaA…
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Planar light-emitting diodes (LEDs) fabricated within a single high-mobility quantum well are demonstrated. Our approach leads to a dramatic reduction of radiative lifetime and junction area with respect to conventional vertical LEDs, promising very high-frequency device operation. Devices were fabricated by UV lithography and wet chemical etching starting from p-type modulation-doped AlGaAs/GaAs heterostructures grown by molecular beam epitaxy. Electrical and optical measurements from room temperature down to 1.8 K show high spectral purity and high external efficiency. Time-resolved measurements yielded extremely short recombination times of the order of 50 ps, demonstrating the relevance of the present scheme for high-frequency device applications in the GHz range.
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Submitted 31 July, 2002;
originally announced July 2002.
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Metastable phase in the quantum Hall ferromagnet
Authors:
Vincenzo Piazza,
Vittorio Pellegrini,
Fabio Beltram,
Werner Wegscheider
Abstract:
Time-dependent capacitance measurements reveal an unstable phase of electrons in gallium arsenide quantum well that occurs when two Landau levels with opposite spin are brought close to degeneracy by applying a gate voltage. This phase emerges below a critical temperature and displays a peculiar non-equilibrium dynamical evolution. The relaxation dynamics is found to follow a stretched exponenti…
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Time-dependent capacitance measurements reveal an unstable phase of electrons in gallium arsenide quantum well that occurs when two Landau levels with opposite spin are brought close to degeneracy by applying a gate voltage. This phase emerges below a critical temperature and displays a peculiar non-equilibrium dynamical evolution. The relaxation dynamics is found to follow a stretched exponential behavior and correlates with hysteresis loops observed by swee** the magnetic field. These experiments indicate that metastable randomly-distributed magnetic domains are involved in the relaxation process in a way that is equivalently tunable by a change in gate voltage or temperature.
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Submitted 25 March, 2003; v1 submitted 9 July, 2002;
originally announced July 2002.
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Large transconductance oscillations in a single-well vertical Aharonov-Bohm interferometer
Authors:
Vincenzo Piazza,
Fabio Beltram,
Werner Wegscheider,
Chi-Te Liang,
M. Pepper
Abstract:
Aharonov-Bohm (AB) interference is reported for the first time in the conductance of a vertical nanostructure based on a single GaAs/AlGaAs quantum well (QW). The two lowest subbands of the well are spatially separated by the Hartree barrier originating from electronic repulsion in the modulation-doped QW and provide AB two-path geometry. Split-gates control the in-plane electronic momentum disp…
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Aharonov-Bohm (AB) interference is reported for the first time in the conductance of a vertical nanostructure based on a single GaAs/AlGaAs quantum well (QW). The two lowest subbands of the well are spatially separated by the Hartree barrier originating from electronic repulsion in the modulation-doped QW and provide AB two-path geometry. Split-gates control the in-plane electronic momentum dispersion. In our system, we have clearly demonstrated AB interference in both electrostatic and magnetic modes. In the latter case the magnetic field was applied parallel to the QW plane, and perpendicular to the 0.02 um^2 AB loop. In the electrostatic mode of operation the single-QW scheme adopted led to large transconductance oscillations with relative amplitudes exceeding 30 %. The relevance of the present design strategy for the implementation of coherent nanoelectronic devices is underlined.
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Submitted 7 September, 2000;
originally announced September 2000.
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First-Order Phase Transition in a Quantum Hall Ferromagnet
Authors:
Vincenzo Piazza,
Vittorio Pellegrini,
Fabio Beltram,
Werner Wegscheider,
Tomas Jungwirth,
Allan H. MacDonald
Abstract:
The single-particle energy spectrum of a two-dimensional electron gas in a perpendicular magnetic field consists of equally-spaced spin-split Landau levels, whose degeneracy is proportional to the magnetic field strength. At integer and particular fractional ratios between the number of electrons and the degeneracy of a Landau level (filling factors n) quantum Hall effects occur, characterised b…
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The single-particle energy spectrum of a two-dimensional electron gas in a perpendicular magnetic field consists of equally-spaced spin-split Landau levels, whose degeneracy is proportional to the magnetic field strength. At integer and particular fractional ratios between the number of electrons and the degeneracy of a Landau level (filling factors n) quantum Hall effects occur, characterised by a vanishingly small longitudinal resistance and quantised Hall voltage. The quantum Hall regime offers unique possibilities for the study of cooperative phenomena in many-particle systems under well-controlled conditions. Among the fields that benefit from quantum-Hall studies is magnetism, which remains poorly understood in conventional material. Both isotropic and anisotropic ferromagnetic ground states have been predicted and few of them have been experimentally studied in quantum Hall samples with different geometries and filling factors. Here we present evidence of first-order phase transitions in n = 2 and 4 quantum Hall states confined to a wide gallium arsenide quantum well. The observed hysteretic behaviour and anomalous temperature dependence in the longitudinal resistivity indicate the occurrence of a transition between the two distinct ground states of an Ising quantum-Hall ferromagnet. Detailed many-body calculations allowed the identification of the microscopic origin of the anisotropy field.
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Submitted 15 February, 2000; v1 submitted 18 June, 1999;
originally announced June 1999.
