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Dirac parameters and topological phase diagram of Pb1-xSnxSe from magneto-spectroscopy
Authors:
G. Krizman,
B. A. Assaf,
T. Phuphachong,
G. Bauer,
G. Springholz,
L. A. de Vaulchier,
Y. Guldner
Abstract:
Pb1-xSnxSe hosts 3D massive Dirac fermions across the entire composition range for which the crystal structure is cubic. In this work, we present a comprehensive experimental map** of the 3D band structure parameters of Pb1-xSnxSe as a function of composition and temperature. We cover a parameter space spanning the band inversion that yields its topological crystalline insulator phase. A non-clo…
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Pb1-xSnxSe hosts 3D massive Dirac fermions across the entire composition range for which the crystal structure is cubic. In this work, we present a comprehensive experimental map** of the 3D band structure parameters of Pb1-xSnxSe as a function of composition and temperature. We cover a parameter space spanning the band inversion that yields its topological crystalline insulator phase. A non-closure of the energy gap is evidenced in the vicinity of this phase transition. Using magnetooptical Landau level spectroscopy, we determine the energy gap, Dirac velocity, anisotropy factor and topological character of Pb1-xSnxSe epilayers grown by molecular beam epitaxy on BaF2 (111). Our results are evidence that Pb1-xSnxSe is a model system to study topological phases and the nature of the phase transition.
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Submitted 24 October, 2018;
originally announced October 2018.
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Avoided level crossing at the magnetic field induced topological phase transition due to spin-orbital mixing
Authors:
G. Krizman,
B. A. Assaf,
M. Orlita,
T. Phuphachong,
G. Bauer,
G. Springholz,
G. Bastard,
R. Ferreira,
L. A. de Vaulchier,
Y. Guldner
Abstract:
In 3D topological insulators, an effective closure of the bulk energy gap with increasing magnetic field expected at a critical point can yield a band crossing at a gapless Dirac node. Using high-field magnetooptical Landau level spectroscopy on the topological crystalline insulator Pb1-xSnxSe, we demonstrate that such a gap closure does not occur, and an avoided crossing is observed as the magnet…
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In 3D topological insulators, an effective closure of the bulk energy gap with increasing magnetic field expected at a critical point can yield a band crossing at a gapless Dirac node. Using high-field magnetooptical Landau level spectroscopy on the topological crystalline insulator Pb1-xSnxSe, we demonstrate that such a gap closure does not occur, and an avoided crossing is observed as the magnetic field is swept through the critical field. We attribute this anticrossing to orbital parity and spin mixing of the N=0 levels. Concurrently, we observe no gap closure at the topological phase transition versus temperature suggesting that the anticrossing is a generic property of topological phase transitions.
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Submitted 9 August, 2018;
originally announced August 2018.
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Tunable Dirac interface states in topological superlattices
Authors:
G. Krizman,
B. A. Assaf,
T. Phuphachong,
G. Bauer,
G. Springholz,
G. Bastard,
R. Ferreira,
L. A. de Vaulchier,
Y. Guldner
Abstract:
Relativistic Dirac fermions are ubiquitous in condensed matter physics. Their mass is proportional to the material energy gap and the ability to control and tune the mass has become an essential tool to engineer quantum phenomena that mimic high energy particles and provide novel device functionalities. In topological insulator thin films, new states of matter can be generated by hybridizing the m…
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Relativistic Dirac fermions are ubiquitous in condensed matter physics. Their mass is proportional to the material energy gap and the ability to control and tune the mass has become an essential tool to engineer quantum phenomena that mimic high energy particles and provide novel device functionalities. In topological insulator thin films, new states of matter can be generated by hybridizing the massless Dirac states that occur at material surfaces. In this work, we experimentally and theoretically introduce a platform where this hybridization can be continuously tuned: the Pb1-xSnxSe topological superlattice. In this system, topological Dirac states occur at the interfaces between a topological crystalline insulator Pb1-xSnxSe and a trivial insulator, realized in the form of topological quantum wells (TQW) epitaxially stacked on top of each other. Using magnetooptical transmission spectroscopy on high quality MBE grown Pb1-xSnxSe superlattices, we show that the penetration depth of the TQW interface states and therefore their Dirac mass is continuously tunable with temperature. This presents a new pathway to engineer the Dirac mass of topological systems and paves the way towards the realization of emergent quantum states of matter using Pb1-xSnxSe topological superlattices.
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Submitted 9 August, 2018; v1 submitted 13 June, 2018;
originally announced June 2018.
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Negative longitudinal magnetoresistance from anomalous N=0 Landau level in topological materials
Authors:
B. A. Assaf,
T. Phuphachong,
E. Kampert,
V. V. Volobuev,
P. S. Mandal,
J. Sánchez-Barriga,
O. Rader,
G. Bauer,
G. Springholz,
L. A. de Vaulchier,
Y. Guldner
Abstract:
Negative longitudinal magnetoresistance (NLMR) is shown to occur in topological materials in the extreme quantum limit, when a magnetic field is applied parallel to the excitation current. We perform pulsed and DC field measurements on Pb1-xSnxSe epilayers where the topological state can be chemically tuned. The NLMR is observed in the topological state, but is suppressed and becomes positive when…
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Negative longitudinal magnetoresistance (NLMR) is shown to occur in topological materials in the extreme quantum limit, when a magnetic field is applied parallel to the excitation current. We perform pulsed and DC field measurements on Pb1-xSnxSe epilayers where the topological state can be chemically tuned. The NLMR is observed in the topological state, but is suppressed and becomes positive when the system becomes trivial. In a topological material, the lowest N=0 conduction Landau level disperses down in energy as a function of increasing magnetic field, while the N=0 valence Landau level disperses upwards. This anomalous behavior is shown to be responsible for the observed NLMR. Our work provides an explanation of the outstanding question of NLMR in topological insulators and establishes this effect as a possible hallmark of bulk conduction in topological matter.
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Submitted 11 August, 2017; v1 submitted 6 April, 2017;
originally announced April 2017.
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Magnetooptical determination of a topological index
Authors:
Badih A. Assaf,
Thanyanan Phuphachong,
Valentine V. Volobuev,
Guenther Bauer,
Gunther Springholz,
Louis-Anne de Vaulchier,
Yves Guldner
Abstract:
When a Dirac fermion system acquires an energy-gap, it is said to have either trivial (positive energy-gap) or non-trivial (negative energy-gap) topology, depending on the parity ordering of its conduction and valence bands. The non-trivial regime is identified by the presence of topological surface or edge-state dispersing in the energy gap of the bulk and is attributed a non-zero topological ind…
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When a Dirac fermion system acquires an energy-gap, it is said to have either trivial (positive energy-gap) or non-trivial (negative energy-gap) topology, depending on the parity ordering of its conduction and valence bands. The non-trivial regime is identified by the presence of topological surface or edge-state dispersing in the energy gap of the bulk and is attributed a non-zero topological index. In this work, we show that such topological indices can be determined experimentally via an accurate measurement of the effective velocity of bulk massive Dirac fermions. We demonstrate this analytically starting from the Bernevig-Hughes-Zhang Hamiltonian (BHZ) to show how the topological index depends on this velocity. We then experimentally extract the topological index in Pb1-xSnxSe and Pb1-xSnxTe using infrared magnetooptical Landau level spectroscopy. This approach is argued to be universal to all material classes that can be described by a BHZ-like model and that host a topological phase transition.
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Submitted 5 April, 2017; v1 submitted 31 August, 2016;
originally announced August 2016.
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Massive and massless Dirac fermions in Pb1-xSnxTe topological crystalline insulator probed by magneto-optical absorption
Authors:
B. A. Assaf,
T. Phuphachong,
V. V. Volobuev,
A. Inhofer,
G. Bauer,
G. Springholz,
L. A. de Vaulchier,
Y. Guldner
Abstract:
Dirac fermions in condensed matter physics hold great promise for novel fundamental physics, quantum devices and data storage applications. IV-VI semiconductors, in the inverted regime, have been recently shown to exhibit massless topological surface Dirac fermions protected by crystalline symmetry, as well as massive bulk Dirac fermions. Under a strong magnetic field (B), both surface and bulk st…
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Dirac fermions in condensed matter physics hold great promise for novel fundamental physics, quantum devices and data storage applications. IV-VI semiconductors, in the inverted regime, have been recently shown to exhibit massless topological surface Dirac fermions protected by crystalline symmetry, as well as massive bulk Dirac fermions. Under a strong magnetic field (B), both surface and bulk states are quantized into Landau levels that disperse as B^1/2, and are thus difficult to distinguish. In this work, magneto-optical absorption is used to probe the Landau levels of high mobility Bi-doped Pb0.54Sn0.46Te topological crystalline insulator (111)-oriented films. The high mobility achieved in these thin film structures allows us to probe and distinguish the Landau levels of both surface and bulk Dirac fermions and extract valuable quantitative information about their physical properties. This work paves the way for future magnetooptical and electronic transport experiments aimed at manipulating the band topology of such materials.
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Submitted 12 January, 2016; v1 submitted 5 October, 2015;
originally announced October 2015.
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Disorder-perturbed Landau levels in high electron mobility epitaxial graphene
Authors:
Simon Maëro,
Abderrezak Torche,
Thanyanan Phuphachong,
Emiliano Pallecchi,
Abdelkarim Ouerghi,
Robson Ferreira,
Louis-Anne de Vaulchier,
Yves Guldner
Abstract:
We show that the Landau levels in epitaxial graphene in presence of localized defects are significantly modified compared to those of an ideal system. We report on magneto-spectroscopy experiments performed on high quality samples. Besides typical interband magneto-optical transitions, we clearly observe additional transitions that involve perturbed states associated to short-range impurities such…
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We show that the Landau levels in epitaxial graphene in presence of localized defects are significantly modified compared to those of an ideal system. We report on magneto-spectroscopy experiments performed on high quality samples. Besides typical interband magneto-optical transitions, we clearly observe additional transitions that involve perturbed states associated to short-range impurities such as vacancies. Their intensity is found to decrease with an annealing process and a partial self-healing over time is observed. Calculations of the perturbed Landau levels by using a delta-like potential show electronic states both between and at the same energies of the Laudau levels of ideal graphene. The calculated absorption spectra involving all perturbed and unperturbed states are in very good agreement with the experiments.
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Submitted 16 October, 2014;
originally announced October 2014.
