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Kinetics of charge carrier recombination in beta-Ga2O3 crystals
Authors:
T. T. Huynh,
L. L. C. Lem,
A. Kuramata,
M. R. Phillips,
C. Ton-That
Abstract:
Cathodoluminescence spectra were measured to determine the characteristics of luminescence bands and carrier dynamics in beta-Ga2O3 bulk single crystals. The CL emission was found to be dominated by a broad UV emission peaked at 3.40 eV, which exhibits strong quenching with increasing temperature; however, its spectral shape and energy position remain virtually unchanged. We observed a super-linea…
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Cathodoluminescence spectra were measured to determine the characteristics of luminescence bands and carrier dynamics in beta-Ga2O3 bulk single crystals. The CL emission was found to be dominated by a broad UV emission peaked at 3.40 eV, which exhibits strong quenching with increasing temperature; however, its spectral shape and energy position remain virtually unchanged. We observed a super-linear increase of CL intensity with excitation density; this kinetics of carrier recombination can be explained in terms of carrier trap** and charge transfer at Fe impurity centres. The temperature-dependent properties of this UV band are consistent with weakly bound electrons in self-trapped excitons with an activation energy of 48 +/- 10 meV. In addition to the self-trapped exciton emission, a blue luminescence (BL) band is shown to be related to a donor-like defect, which increases significantly in concentration after hydrogen plasma annealing. The point defect responsible for the BL, likely an oxygen vacancy, is strongly coupled to the lattice exhibiting a Huang-Rhys factor of ~ 7.3.
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Submitted 27 May, 2020;
originally announced May 2020.
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Red Luminescence in H-doped beta-Ga2O3
Authors:
Thanh Tung Huynh,
Ekaterine Chikoidze,
Curtis P. Irvine,
Muhammad Zakria,
Yves Dumont,
Ferechteh H. Teherani,
Eric V. Sandana,
Philippe Bove,
David J. Rogers,
Matthew R. Phillips,
Cuong Ton-That
Abstract:
The effects of hydrogen incorporation into beta-Ga2O3 thin films have been investigated by chemical, electrical and optical characterization techniques. Hydrogen incorporation was achieved by remote plasma do** without any structural alterations of the film; however, X-ray photoemission reveals major changes in the oxygen chemical environment. Depth-resolved cathodoluminescence (CL) reveals that…
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The effects of hydrogen incorporation into beta-Ga2O3 thin films have been investigated by chemical, electrical and optical characterization techniques. Hydrogen incorporation was achieved by remote plasma do** without any structural alterations of the film; however, X-ray photoemission reveals major changes in the oxygen chemical environment. Depth-resolved cathodoluminescence (CL) reveals that the near-surface region of the H-doped Ga2O3 film exhibits a distinct red luminescence (RL) band at 1.9 eV. The emergence of the H-related RL band is accompanied by an enhancement in the electrical conductivity of the film by an order of magnitude. Temperature-resolved CL points to the formation of abundant H-related donors with a binding energy of 28 +/- 4 meV. The RL emission is attributed to shallow donor-deep acceptor pair recombination, where the acceptor is a VGa-H complex and the shallow donor is interstitial H. The binding energy of the VGa-H complex, based on our experimental considerations, is consistent with the computational results by Varley et al [J. Phys.: Condens. Matter, 23, 334212, 2011].
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Submitted 15 July, 2020; v1 submitted 27 May, 2020;
originally announced May 2020.
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Enhancement of the UV emission from gold/ZnO nanorods exhibiting no green luminescence
Authors:
Saskia Fiedler,
Laurent O. Lee Cheong Lem,
Cuong Ton-That,
Axel Hoffmann,
Matthew R. Phillips
Abstract:
Large reflection losses at interfaces in light emitting semiconductor devices cause a significant reduction in their light emission and energy efficiencies. Metal nanoparticle (NP) surface coatings have been demonstrated to increase the light extraction efficiency from planar high refractive index semiconductor surfaces. This emission enhancement in Au NP-coated ZnO is widely attributed to involve…
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Large reflection losses at interfaces in light emitting semiconductor devices cause a significant reduction in their light emission and energy efficiencies. Metal nanoparticle (NP) surface coatings have been demonstrated to increase the light extraction efficiency from planar high refractive index semiconductor surfaces. This emission enhancement in Au NP-coated ZnO is widely attributed to involvement of a green (~ 2.5 eV) deep level ZnO defect exciting localized surface plasmons in the NPs that non-radiatively decay into hot electrons, which return to ZnO and radiatively recombine. In this work, we achieve a 6 times enhancement of the ultra-violet excitonic emission in ZnO nanorods that are coated with 5 nm Au NPs without the aid of ZnO defects. Cathodoluminescence (CL), photoluminescence (PL) and a novel concurrent CL-PL technique as well as time resolved PL spectroscopy revealed that the increase in UV emission is due to the formation of an additional fast excitonic relaxation pathway that increases the exciton spontaneous emission rate. Concurrent CL-PL measurements ruled out the presence of charge transfer mechanism in the emission enhancement process. While time resolved PL results confirmed the existence of a new excitonic recombination channel that is attributed to exciton relaxation via the plasmon-assisted excitation of rapid non-radiative Au interband transitions. Our results establish that ZnO defect levels ~ 2.5 eV are not required to facilitate Au NP induced enhancement of the ZnO UV emission.
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Submitted 14 October, 2019;
originally announced October 2019.
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The role of surface depletion layer effects on the enhancement of the UV emission in ZnO induced by a nanostructured Al surface coating
Authors:
Saskia Fiedler,
Laurent O. Lee Cheong Lem,
Cuong Ton-That,
Matthew R. Phillips
Abstract:
The UV enhancement of Al-coated ZnO single crystals with a wide range of carrier densities is systematically studied using depth-resolved cathodoluminescence (CL) and photoluminescence (PL) as well as valence band X-ray photoemission spectroscopy (VB-XPS). AN up to 17-fold enhanced PL UV emission for Al-coated ZnO with the highest carrier density (2 x 10^17 cm^-3) was measured, which falls to a 12…
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The UV enhancement of Al-coated ZnO single crystals with a wide range of carrier densities is systematically studied using depth-resolved cathodoluminescence (CL) and photoluminescence (PL) as well as valence band X-ray photoemission spectroscopy (VB-XPS). AN up to 17-fold enhanced PL UV emission for Al-coated ZnO with the highest carrier density (2 x 10^17 cm^-3) was measured, which falls to a 12-fold increase for the lowest carrier density (3 x 10^13 cm^-3). Depth-resolved CL measurements confirm that the enhancement is strongest near the metal coating-ZnO interface consistent with an increased UV emission due to an exciton-localized surface plasmon coupling mechanism. Correlative CL, PL and VB-XPS studies reveal that a number of additional effects to the presence of the Al surface coating also contribute to the UV enhancement factor. These include increased UV enhancement due to the formation of a surface depletion layer induced by the metal surface coating, which also passivates competitive non-radiative surface recombination channels found in uncoated ZnO. Significantly, it was established that the magnitude of the emission enhancement factor can be raised in a controlled way by reducing the thickness of the depletion layer by increasing the carrier density. The contribution of these effects collectively provides an explanation for the large span of enhancement factors reported in the literature.
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Submitted 22 August, 2019;
originally announced August 2019.
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Correlative Study of Enhanced Excitonic Emission in ZnO Coated with Al Nanoparticles using Electron and Laser Excitation
Authors:
Saskia Fiedler,
Laurent O. Lee,
Cheong Lem,
Markus Schleuning,
Axel Hoffmann,
Cuong Ton-That,
Matthew R. Phillips
Abstract:
Metal nanoparticle (NP) surface coatings are known to significantly enhance the ultra-violet luminescence intensity of ZnO. Although there is general agreement that resonantly excited Localized Surface Plasmons (LSPs) in metal NPs can directly couple to excitons in the semiconductor increasing their spontaneous emission rate, the exact mechanisms involved in this phenomenon are currently not fully…
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Metal nanoparticle (NP) surface coatings are known to significantly enhance the ultra-violet luminescence intensity of ZnO. Although there is general agreement that resonantly excited Localized Surface Plasmons (LSPs) in metal NPs can directly couple to excitons in the semiconductor increasing their spontaneous emission rate, the exact mechanisms involved in this phenomenon are currently not fully understood. In this work, LSP-exciton coupling in a ZnO single crystal and ZnO nanorods coated with a 2 nm Al layer has been investigated using correlative photoluminescence and depth-resolved cathodoluminescence and time-resolved photoluminescence spectroscopy. Temperature-resolved cathodoluminescence and photoluminescence measurements from 10 K to 250 K show enhancement factors up to 12 times of the free exciton (FX) emission at 80 K. The FX couple more efficiently to the LSPs in Al compared to the localized donor-bound excitons. Furthermore, a strong polarization dependence of the LSPs with respect to the FX was observed with higher enhanced FX transitions polarized in the same direction as the electric field of the incident excitation. These results indicate that selective enhancement of the ultra-violet excitonic PL in ZnO can be achieved by careful alignment of the crystallographic axes of the ZnO relative to the electric vector of the excitation source.
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Submitted 16 August, 2019;
originally announced August 2019.
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Shallow carrier traps in hydrothermal ZnO crystals
Authors:
C. Ton-That,
L. L. C. Lem,
M. R. Phillips,
F. Reisdorffer,
J. Mevellec,
T. -P. Nguyen,
C. Nenstiel,
A. Hoffmann
Abstract:
Native and hydrogen-plasma induced shallow traps in hydrothermally grown ZnO crystals have been investigated by charge-based deep level transient spectroscopy (Q-DLTS), photoluminescence and cathodoluminescence microanalysis. The as-grown ZnO exhibits a trap state at 23 meV, while H-doped ZnO produced by plasma do** shows two levels at 22 meV and 11 meV below the conduction band. As-grown ZnO di…
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Native and hydrogen-plasma induced shallow traps in hydrothermally grown ZnO crystals have been investigated by charge-based deep level transient spectroscopy (Q-DLTS), photoluminescence and cathodoluminescence microanalysis. The as-grown ZnO exhibits a trap state at 23 meV, while H-doped ZnO produced by plasma do** shows two levels at 22 meV and 11 meV below the conduction band. As-grown ZnO displays the expected thermal decay of bound excitons with increasing temperature from 7 K, while we observed an anomalous behaviour of the excitonic emission in H-doped ZnO, in which its intensity increases with increasing temperature in the range 140-300 K. Based on a multitude of optical results, a qualitative model is developed which explains the Y line structural defects, which act as an electron trap with an activation energy of 11 meV, being responsible for the anomalous temperature-dependent cathodoluminescence of H-doped ZnO.
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Submitted 23 June, 2015;
originally announced June 2015.
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Coalescence of ZnO nanowires grown from monodispersed Au nanoparticles
Authors:
Liangchen Zhu,
Matthew R. Phillips,
Cuong Ton-That
Abstract:
New insights into controlling nanowire merging phenomena are demonstrated in growth of thin ZnO nanowires using monodispersed Au colloidal nanoparticles as catalyst. Both nanowire diameter and density were found to be strongly dependent on the density of Au nanoparticles. Structural analysis and spectral cathodoluminescence imaging of the c-plane nanowire cross-sections reveal that thin isolated n…
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New insights into controlling nanowire merging phenomena are demonstrated in growth of thin ZnO nanowires using monodispersed Au colloidal nanoparticles as catalyst. Both nanowire diameter and density were found to be strongly dependent on the density of Au nanoparticles. Structural analysis and spectral cathodoluminescence imaging of the c-plane nanowire cross-sections reveal that thin isolated nanowires growing from the Au nanoparticles begin to merge and coalesce with neighbouring nanowires to form larger nanowires when their separation reaches a threshold distance. Green luminescence, which is originated from the remnants of constituent nanowires before merging, is detected at the core of fused nanowires. The distribution of nanowire diameters and green emission were found to be strongly dependent on the density of the Au nanoparticles. The merging phenomenon is attributed to electrostatic interactions between nanowire c-facets during growth and well-described by a cantilever bending model.
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Submitted 22 June, 2015;
originally announced June 2015.
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Molecular nitrogen acceptors in ZnO nanowires induced by nitrogen plasma annealing
Authors:
C. Ton-That,
L. Zhu,
M. N. Lockrey,
M. R. Phillips,
B. C. C. Cowie,
A. Tadich,
L. Thomsen,
S. Khachadorian,
S. Schlichting,
N. Jankowski,
A. Hoffmann
Abstract:
X-ray absorption near-edge spectroscopy (XANES), photoluminescence, cathodoluminescence and Raman spectroscopy have been used to investigate the chemical states of nitrogen dopants in ZnO nanowires. It is found that nitrogen exists in multiple states: NO, NZn and loosely bound N2 molecule. The work establishes a direct link between a donor-acceptor pair (DAP) emission at 3.232 eV and the concentra…
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X-ray absorption near-edge spectroscopy (XANES), photoluminescence, cathodoluminescence and Raman spectroscopy have been used to investigate the chemical states of nitrogen dopants in ZnO nanowires. It is found that nitrogen exists in multiple states: NO, NZn and loosely bound N2 molecule. The work establishes a direct link between a donor-acceptor pair (DAP) emission at 3.232 eV and the concentration of loosely bound N2. These results confirm that N2 at Zn site is a potential candidate for producing a shallow acceptor state in N-doped ZnO as theoretically predicted by Lambrecht and Boonchun [Phys. Rev. B 87, 195207 (2013)]. Additionally, shallow acceptor states arising from NO complexes have been ruled out in this study.
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Submitted 22 June, 2015;
originally announced June 2015.
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Electroluminescence from isolated defects in zinc oxide, towards electrically triggered single photon sources at room temperature
Authors:
Sumin Choi,
Amanuel M. Berhane,
Angus Gentle,
Cuong Ton-That,
Matthew R Phillips,
Igor Aharonovich
Abstract:
Single photon sources are required for a wide range of applications in quantum information science, quantum cryptography and quantum communications. However, so far majority of room temperature emitters are only excited optically, which limits their proper integration into scalable devices. In this work, we overcome this limitation and present room temperature electrically triggered light emission…
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Single photon sources are required for a wide range of applications in quantum information science, quantum cryptography and quantum communications. However, so far majority of room temperature emitters are only excited optically, which limits their proper integration into scalable devices. In this work, we overcome this limitation and present room temperature electrically triggered light emission from localized defects in zinc oxide (ZnO) nanoparticles and thin films. The devices emit at the red spectral range and show excellent rectifying behavior. The emission is stable over an extensive period of time, providing an important prerequisite for practical devices. Our results open up possibilities to build new ZnO based quantum integrated devices that incorporate solid-state single photon sources for quantum information technologies.
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Submitted 12 February, 2015;
originally announced February 2015.
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Single photon emission from ZnO nanoparticles
Authors:
Sumin Choi,
Brett C. Johnson,
Stefania Castelletto,
Cuong Ton-That,
Matthew R. Phillips,
Igor Aharonovich
Abstract:
Room temperature single photon emitters are very important resources for photonics and emerging quantum technologies. In this work we study single photon emission from defect centers in 20 nm zinc oxide (ZnO) nanoparticles. The emitters exhibit bright broadband fluorescence in the red spectral range centered at 640 nm with polarized excitation and emission. The studied emitters showed continuous b…
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Room temperature single photon emitters are very important resources for photonics and emerging quantum technologies. In this work we study single photon emission from defect centers in 20 nm zinc oxide (ZnO) nanoparticles. The emitters exhibit bright broadband fluorescence in the red spectral range centered at 640 nm with polarized excitation and emission. The studied emitters showed continuous blinking, however, bleaching can be suppressed using a polymethyl methacrylate (PMMA) coating. Furthermore, hydrogen termination increased the density of single photon emitters. Our results will contribute to the identification of quantum systems in ZnO.
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Submitted 5 March, 2014;
originally announced March 2014.
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Effects of strain on the valence band structure and exciton-polariton energies in ZnO
Authors:
Markus R. Wagner,
Gordon Callsen,
Juan S. Reparaz,
Ronny Kirste,
Axel Hoffmann,
Anna V. Rodina,
Andre Schleife,
Friedhelm Bechstedt,
Matthew R. Phillips
Abstract:
The uniaxial stress dependence of the band structure and the exciton-polariton transitions in wurtzite ZnO is thoroughly studied using modern first-principles calculations based on the HSE+G0W0 approach, k p modeling using the deformation potential framework, and polarized photoluminescence measurements. The ordering of the valence bands [A(G7), B(G9), C(G7)] is found to be robust even for high un…
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The uniaxial stress dependence of the band structure and the exciton-polariton transitions in wurtzite ZnO is thoroughly studied using modern first-principles calculations based on the HSE+G0W0 approach, k p modeling using the deformation potential framework, and polarized photoluminescence measurements. The ordering of the valence bands [A(G7), B(G9), C(G7)] is found to be robust even for high uniaxial and biaxial strains. Theoretical results for the uniaxial pressure coefficients and splitting rates of the A, B, and C valence bands and their optical transitions are obtained including the effects of the spin-orbit interaction. The excitonic deformation potentials are derived and the stress rates for hydrostatic pressure are determined based on the results for uniaxial and biaxial stress. In addition, the theory for the stress dependence of the exchange interaction and longitudinal-transversal splitting of the exciton-polaritons is developed using the basic exciton functions of the quasi-cubic approximation and taking the interaction between all exciton states into account. It is shown that the consideration of these effects is crucial for an accurate description of the stress dependence of the optical spectra in ZnO. The theoretical results are compared to polarized photoluminescence measurements of different ZnO substrates as function of uniaxial pressure and experimental values reported in the literature demonstrating an excellent agreement with the computed pressure coefficients.
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Submitted 2 January, 2014; v1 submitted 2 December, 2013;
originally announced December 2013.
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Optical Properties of Manganese Doped Wide Band Gap ZnS and ZnO
Authors:
M. Godlewski,
A. Wojcik-Glodowska,
E. Guziewicz,
S. Yatsunenko,
A. Zakrzewski,
Y. Dumont,
E. Chikoidze,
M. R. Phillips
Abstract:
Optical properties of ZnMnO layers grown at low temperature by Atomic Layer Deposition and Metalorganic Vapor Phase Epitaxy are discussed and compared to results obtained for ZnMnS samples. Present results suggest a double valence of Mn ions in ZnO lattice. Strong absorption, with onset at about 2.1 eV, is tentatively related to Mn 2+ to 3+ photoionization. Mechanism of emission deactivation in Zn…
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Optical properties of ZnMnO layers grown at low temperature by Atomic Layer Deposition and Metalorganic Vapor Phase Epitaxy are discussed and compared to results obtained for ZnMnS samples. Present results suggest a double valence of Mn ions in ZnO lattice. Strong absorption, with onset at about 2.1 eV, is tentatively related to Mn 2+ to 3+ photoionization. Mechanism of emission deactivation in ZnMnO is discussed and is explained by the processes following the assumed Mn 2+ to 3+ recharging.
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Submitted 26 July, 2011;
originally announced July 2011.
