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Effect of antifluorite layer on the magnetic order in Eu-based 1111 compounds, EuTAsF (T = Zn, Mn, and Fe)
Authors:
Igor V. Plokhikh,
Alexander A. Tsirlin,
Dmitry D. Khalyavin,
Henry E. Fischer,
Andrei V. Shevelkov,
Arno Pfitzner
Abstract:
The 1111 compounds with an alternating sequence of fluorite and antifluorite layers serve as structural hosts for the vast family of Fe-based superconductors. Here, we use neutron powder diffraction and density-functional-theory (DFT) band-structure calculations to study magnetic order of Eu2+ in the [EuF]+ fluorite layers depending on the nature of the [TAs]- antifluorite layer that can be non-ma…
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The 1111 compounds with an alternating sequence of fluorite and antifluorite layers serve as structural hosts for the vast family of Fe-based superconductors. Here, we use neutron powder diffraction and density-functional-theory (DFT) band-structure calculations to study magnetic order of Eu2+ in the [EuF]+ fluorite layers depending on the nature of the [TAs]- antifluorite layer that can be non-magnetic semiconducting (T = Zn), magnetic semiconducting (T = Mn), or magnetic metallic (T = Fe). Antiferromagnetic transitions at TN ~ 2.4 - 3 K due to an ordering of the Eu2+ magnetic moments were confirmed in all three EuTAsF compounds. Whereas in EuTAsF (T = Zn and Mn), the commensurate k1 = (1/2 1/2 0) stripe order pattern with magnetic moments within the ab-plane is observed, the order in EuFeAsF is incommensurate with k = (0 0.961(1) 1/2) and represents a cycloid of Eu2+ magnetic moments confined within the bc-plane. Additionally, the Mn2+ sublattice in EuMnAsF features a robust G-type antiferromagnetic order that persists at least up to room temperature, with magnetic moments along the c-direction. Although DFT calculations suggest stripe antiferromagnetic order in the Fe-sublattice of EuFeAsF as the ground state, neutron diffraction reveals no evidence of long-range magnetic order associated with Fe. We show that the frustrating interplane interaction J3 between the adjacent [EuF]+ layers is comparable with in-plane J1-J2 interactions already in the case of semiconducting fluorite layers [TAs]- (T = Zn and Mn) and becomes dominant in the case of the metallic [FeAs]- ones. The latter, along with a slight orthorhombic distortion, is proposed to be the origin of the incommensurate magnetic structure observed in EuFeAsF.
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Submitted 20 December, 2022;
originally announced December 2022.
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Possible Experimental Realization of a Basic Z2 Topological Semimetal
Authors:
Erik Haubold,
Alexander Fedorov,
Igor P. Rusinov,
Tatiana V. Menshchikova,
Viola Duppel,
Daniel Friedrich,
Florian Pielnhofer,
Richard Weihrich,
Arno Pfitzner,
Alexander Zeugner,
Anna Isaeva,
Setti Thirupathaiah,
Yevhen Kushnirenko,
Emile Rienks,
Timur Kim,
Evgueni V. Chulkov,
Bernd Büchner,
Sergey V. Borisenko
Abstract:
We report experimental and theoretical evidence that GaGeTe is a basic $Z_2$ topological semimetal with three types of charge carriers: bulk-originated electrons and holes as well as surface state electrons. This electronic situation is qualitatively similar to the primer 3D topological insulator Bi2Se3, but important differences account for an unprecedented transport scenario in GaGeTe. High-reso…
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We report experimental and theoretical evidence that GaGeTe is a basic $Z_2$ topological semimetal with three types of charge carriers: bulk-originated electrons and holes as well as surface state electrons. This electronic situation is qualitatively similar to the primer 3D topological insulator Bi2Se3, but important differences account for an unprecedented transport scenario in GaGeTe. High-resolution angle-resolved photoemission spectroscopy combined with advanced band structure calculations show a small indirect energy gap caused by a peculiar band inversion in the \textit{T}-point of the Brillouin zone in GaGeTe. An energy overlap of the valence and conduction bands brings both electron- and hole-like carriers to the Fermi level, while the momentum gap between the corresponding dispersions remains finite. We argue that peculiarities of the electronic spectrum of GaGeTe have a fundamental importance for the physics of topological matter and may boost the material's application potential.
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Submitted 4 December, 2018;
originally announced December 2018.
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Designing 3D topological insulators by 2D-Xene (X = Ge, Sn) sheet functionalization in the GaGeTe-type structures
Authors:
Florian Pielnhofer,
Tatiana V. Menshchikova,
Igor P. Rusinov,
Alexander Zeugner,
Irina Yu. Sklyadneva,
Rolf Heid,
Klaus-Peter Bohnen,
Pavlo Golub,
Alexey I. Baranov,
Eugeni V. Chulkov,
Arno Pfitzner,
Michael Ruckd,
Anna Isaeva
Abstract:
State-of-the-art theoretical studies anticipate a 2D Dirac system in the "heavy" analogues of graphene, free-standing buckled honeycomb-like Xenes (X = Si, Ge, Sn, Pb, etc.). Herewith a structurally and electronically resembling 2D sheet, which can be regarded as Xene functionalized by covalent interactions within a 3D periodic structure, is predicted to constitute a 3D strong topological insulato…
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State-of-the-art theoretical studies anticipate a 2D Dirac system in the "heavy" analogues of graphene, free-standing buckled honeycomb-like Xenes (X = Si, Ge, Sn, Pb, etc.). Herewith a structurally and electronically resembling 2D sheet, which can be regarded as Xene functionalized by covalent interactions within a 3D periodic structure, is predicted to constitute a 3D strong topological insulator with Z2 = 1;(111) (primitive cell, rhombohedral setting) in the structural family of layered AXTe (A = Ga, In; X = Ge, Sn) bulk materials. The host structure GaGeTe is a long-known bulk semiconductor; the "heavy", isostructural analogues InSnTe and GaSnTe are predicted to be dynamically stable. Spin-orbit interaction in InSnTe opens a small topological band gap with inverted gap edges that are mainly composed of the In-5s and Te-5p states. Our simulations classify GaSnTe as a semimetal with topological properties, whereas the verdict for GaGeTe is not conclusive and urges further experimental verification. AXTe family structures can be regarded as stacks of 2D layered cut-outs from a zincblende-type lattice and are composed by elements that are broadly used in modern semiconductor devices; hence they represent an accessible, attractive alternative for applications in spintronics. The layered nature of AXTe should facilitate exfoliation of its hextuple layers and manufacture of heterostuctures.
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Submitted 24 April, 2017;
originally announced April 2017.
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The electronic structure of the antiferromagnetic semiconductor MnSb_2S_4
Authors:
S. F. Matar,
R. Weihrich,
D. Kurowski,
A. Pfitzner,
V. Eyert
Abstract:
The electronic band structures of orthorhombic (oP28) and monoclinic (mC28) MnSb_2S_4 were investigated with ab initio calculations in the local spin density approximation (LSDA) to the density functional theory (DFT). An analysis of the electronic properties and of the chemical bonding is provided using the augmented spherical wave (ASW) method considering nonmagnetic, ferromagnetic, ferrimagne…
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The electronic band structures of orthorhombic (oP28) and monoclinic (mC28) MnSb_2S_4 were investigated with ab initio calculations in the local spin density approximation (LSDA) to the density functional theory (DFT). An analysis of the electronic properties and of the chemical bonding is provided using the augmented spherical wave (ASW) method considering nonmagnetic, ferromagnetic, ferrimagnetic and antiferromagnetic model orderings. In agreement with experimental results both modifications of MnSb_2S_4 are predicted to be antiferromagnetic. While the experimental band gap is missed for the monoclinic polymorph, the calculated band gap for orthorhombic MnSb_2S_4 is close to the experimental one.
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Submitted 26 April, 2005;
originally announced April 2005.
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Vibrations versus collisions and the iterative structure of two-body dynamics
Authors:
Alfred Pfitzner,
Wolfgang Cassing,
Andreas Peter
Abstract:
We adopt a truncated version of two-body dynamics by neglecting three-body correlations, as is supported by microscopic numerical calculations. Introducing orthogonal channel correlations for the pp- and the ph-channel and integrating the latter in terms of vibrational RPA-states we derive a retarded two-body equation. Its solution is nonperturbative with respect to loops, ladders and mixed cont…
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We adopt a truncated version of two-body dynamics by neglecting three-body correlations, as is supported by microscopic numerical calculations. Introducing orthogonal channel correlations for the pp- and the ph-channel and integrating the latter in terms of vibrational RPA-states we derive a retarded two-body equation. Its solution is nonperturbative with respect to loops, ladders and mixed contributions. In the stationary limit we obtain an equation for a generalised effective interaction which iterates both the G-matrix and the polarisation matrix. An in-medium scattering approach transparently demonstrates the collisional dam** of the vibrations.
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Submitted 18 April, 1994;
originally announced April 1994.
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Microscopic analysis of two-body correlations in light nuclei
Authors:
Andreas Peter,
Wolfgang Cassing,
Joern M. Haeuser,
Alfred Pfitzner
Abstract:
Within a nonperturbative dynamical two-body approach - based on coupled equations of motion for the one-body density matrix and the two-body correlation function - we study the distribution of occupation numbers in a correlated system close to the groundstate, the relaxation of single-particle excitations and the dam** of collective modes. For this purpose the nonlinear equations of motion are…
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Within a nonperturbative dynamical two-body approach - based on coupled equations of motion for the one-body density matrix and the two-body correlation function - we study the distribution of occupation numbers in a correlated system close to the groundstate, the relaxation of single-particle excitations and the dam** of collective modes. For this purpose the nonlinear equations of motion are solved numerically within a finite oscillator basis for the first time adopting short-range repulsive and long-range attractive two-body forces. We find in all cases that the formation of long- and short-range correlations and their mixing is related to the long- and short-range part of the nucleon-nucleon interaction which dominate the resummation of loop or ladder diagrams, respectively. However, the proper description of relaxation or dam** phenomena is found to require both types of diagrams as well as the mixed terms simultaneously.
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Submitted 25 November, 1993;
originally announced November 1993.
