Highly indistinguishable single photons from droplet-etched GaAs quantum dots integrated in single-mode waveguides and beamsplitters
Authors:
Florian Hornung,
Ulrich Pfister,
Stephanie Bauer,
Dee Rocking Cyrlyson's,
Dongze Wang,
Ponraj Vijayan,
Ailton J. Garcia Jr,
Saimon Filipe Covre da Silva,
Michael Jetter,
Simone L. Portalupi,
Armando Rastelli,
Peter Michler
Abstract:
The integration of on-demand quantum emitters into photonic integrated circuits (PICs) has drawn much of attention in recent years, as it promises a scalable implementation of quantum information schemes. A central property for several applications is the indistinguishability of the emitted photons. In this regard, GaAs quantum dots (QDs) obtained by droplet etching epitaxy show excellent performa…
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The integration of on-demand quantum emitters into photonic integrated circuits (PICs) has drawn much of attention in recent years, as it promises a scalable implementation of quantum information schemes. A central property for several applications is the indistinguishability of the emitted photons. In this regard, GaAs quantum dots (QDs) obtained by droplet etching epitaxy show excellent performances with visibilities close to one for both individual and remote emitters. Therefore, the realization of these QDs into PICs is highly appealing. Here, we show the first implementation in this direction, realizing the key passive elements needed in PICs, i.e. single-mode waveguides (WGs) with integrated GaAs-QDs, which can be coherently controlled, as well as beamsplitters. We study both the statistical distribution of wavelength, linewidth and decay times of the excitonic line of multiple QDs, as well as the quantum optical properties of individual emitters under resonant excitation. Here, we achieve single-photon purities as high as $1-\text{g}^{(2)}(0)=0.929\pm0.009$ as well as two-photon interference visibilities of up to V$_{\text{TPI}}=0.939\pm0.004$ for two consecutively emitted photons.
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Submitted 18 October, 2023;
originally announced October 2023.
