Showing 1–50 of 102 results for author: Petta, J R

Coherent control of a triangular exchange-only spin qubit

Authors: Edwin Acuna, Joseph D. Broz, Kaushal Shyamsundar, Antonio B. Mei, Colin P. Feeney, Valerie Smetanka, Tiffany Davis, Kangmu Lee, Maxwell D. Choi, Brydon Boyd, June Suh, Wonill D. Ha, Cameron Jennings, Andrew S. Pan, Daniel S. Sanchez, Matthew D. Reed, Jason R. Petta

Abstract: We demonstrate coherent control of a three-electron exchange-only spin qubit with the quantum dots arranged in a close-packed triangular geometry. The device is tuned to confine one electron in each quantum dot, as evidenced by pairwise charge stability diagrams. Time-domain control of the exchange coupling is demonstrated and qubit performance is characterized using blind randomized benchmarking,… ▽ More We demonstrate coherent control of a three-electron exchange-only spin qubit with the quantum dots arranged in a close-packed triangular geometry. The device is tuned to confine one electron in each quantum dot, as evidenced by pairwise charge stability diagrams. Time-domain control of the exchange coupling is demonstrated and qubit performance is characterized using blind randomized benchmarking, with an average single-qubit gate fidelity F = 99.84%. The compact triangular device geometry can be readily scaled to larger two-dimensional quantum dot arrays with high connectivity. △ Less

Submitted 5 June, 2024; originally announced June 2024.

Towards Utilizing Scanning Gate Microscopy as a High-Resolution Probe of Valley Splitting in Si/SiGe Heterostructures

Authors: Efe Cakar, H. Ekmel Ercan, Gordian Fuchs, Artem O. Denisov, Christopher R. Anderson, Mark F. Gyure, Jason R. Petta

Abstract: A detailed understanding of the material properties that affect the splitting between the two low-lying valley states in Si/SiGe heterostructures will be increasingly important as the number of spin qubits is increased. Scanning gate microscopy has been proposed as a method to measure the spatial variation of the valley splitting as a tip-induced dot is moved around in the plane of the Si quantum… ▽ More A detailed understanding of the material properties that affect the splitting between the two low-lying valley states in Si/SiGe heterostructures will be increasingly important as the number of spin qubits is increased. Scanning gate microscopy has been proposed as a method to measure the spatial variation of the valley splitting as a tip-induced dot is moved around in the plane of the Si quantum well. We develop a simulation using an electrostatic model of the scanning gate microscope tip and the overlap** gate structure combined with an approximate solution to the three-dimensional Schrödinger-Poisson equation in the device stack. Using this simulation, we show that a tip-induced quantum dot formed near source and drain electrodes can be adiabatically moved to a region far from the gate electrodes. We argue that by spatially translating the tip-induced dot across a defect in the Si/SiGe interface, changes in valley splitting can be detected. △ Less

Submitted 6 May, 2024; originally announced May 2024.

Measurement-Based Entanglement of Semiconductor Spin Qubits

Authors: Remy L. Delva, Jonas Mielke, Guido Burkard, Jason R. Petta

Abstract: Measurement-based entanglement is a method for entangling quantum systems through the state projection that accompanies a parity measurement. We derive a stochastic master equation describing measurement-based entanglement of a pair of silicon double-dot flop**-mode spin qubits, develop numerical simulations to model this process, and explore what modifications could enable an experimental imple… ▽ More Measurement-based entanglement is a method for entangling quantum systems through the state projection that accompanies a parity measurement. We derive a stochastic master equation describing measurement-based entanglement of a pair of silicon double-dot flop**-mode spin qubits, develop numerical simulations to model this process, and explore what modifications could enable an experimental implementation of such a protocol. With device parameters corresponding to current qubit and cavity designs, we predict an entanglement fidelity $F_e \approx$ 61%. By increasing the cavity outcoupling rate by a factor of ten, we are able to obtain a simulated $F_e \approx$ 81% while maintaining a yield of 33%. △ Less

Submitted 24 December, 2023; originally announced December 2023.

Analysis and mitigation of residual exchange coupling in linear spin qubit arrays

Authors: Irina Heinz, Adam R. Mills, Jason R. Petta, Guido Burkard

Abstract: In recent advancements of quantum computing utilizing spin qubits, it has been demonstrated that this platform possesses the potential for implementing two-qubit gates with fidelities exceeding 99.5%. However, as with other qubit platforms, it is not feasible to completely turn qubit couplings off. This study aims to investigate the impact of coherent error matrices in gate set tomography by emplo… ▽ More In recent advancements of quantum computing utilizing spin qubits, it has been demonstrated that this platform possesses the potential for implementing two-qubit gates with fidelities exceeding 99.5%. However, as with other qubit platforms, it is not feasible to completely turn qubit couplings off. This study aims to investigate the impact of coherent error matrices in gate set tomography by employing a double quantum dot. We evaluate the infidelity caused by residual exchange between spins and compare various mitigation approaches, including the use of adjusted timing through simple drives, considering different parameter settings in the presence of charge noise. Furthermore, we extend our analysis to larger arrays of exchange-coupled spin qubits to provide an estimation of the expected fidelity. In particular, we demonstrate the influence of residual exchange on a single-qubit $Y$ gate and the native two-qubit SWAP gate in a linear chain. Our findings emphasize the significance of accounting for residual exchange when scaling up spin qubit devices and highlight the tradeoff between the effects of charge noise and residual exchange in mitigation techniques. △ Less

Submitted 14 December, 2023; v1 submitted 22 August, 2023; originally announced August 2023.

Comments: 15 pages, 8 figures

Journal ref: Phys. Rev. Research 6, 013153 (2024)

Compressed gate characterization for quantum devices with time-correlated noise

Authors: M. J. Gullans, M. Caranti, A. R. Mills, J. R. Petta

Abstract: As quantum devices make steady progress towards intermediate scale and fault-tolerant quantum computing, it is essential to develop rigorous and efficient measurement protocols that account for known sources of noise. Most existing quantum characterization protocols such as gate set tomography and randomized benchmarking assume the noise acting on the qubits is Markovian. However, this assumption… ▽ More As quantum devices make steady progress towards intermediate scale and fault-tolerant quantum computing, it is essential to develop rigorous and efficient measurement protocols that account for known sources of noise. Most existing quantum characterization protocols such as gate set tomography and randomized benchmarking assume the noise acting on the qubits is Markovian. However, this assumption is often not valid, as for the case of 1/f charge noise or hyperfine nuclear spin noise. Here, we present a general framework for quantum process tomography (QPT) in the presence of time-correlated noise. We further introduce fidelity benchmarks that quantify the relative strength of different sources of Markovian and non-Markovian noise. As an application of our method, we perform a comparative theoretical and experimental analysis of silicon spin qubits. We first develop a detailed noise model that accounts for the dominant sources of noise and validate the model against experimental data. Applying our framework for time-correlated QPT, we find that the number of independent parameters needed to characterize one and two-qubit gates can be compressed by 10x and 100x, respectively, when compared to the fully generic case. These compressions reduce the amount of tomographic measurements needed in experiment, while also significantly speeding up numerical simulations of noisy quantum circuit dynamics compared to time-dependent Hamiltonian simulation. Using this compressed noise model, we find good agreement between our theoretically predicted process fidelities and two qubit interleaved randomized benchmarking fidelities of 99.8% measured in recent experiments on silicon spin qubits. More broadly, our formalism can be directly extended to develop efficient and scalable tuning protocols for high-fidelity control of large-arrays of quantum devices with non-Markovian noise. △ Less

Submitted 22 December, 2023; v1 submitted 26 July, 2023; originally announced July 2023.

Comments: 11 pages, 3 figures, comments welcome

Journal ref: PRX Quantum 5, 010306 (2024)

Cavity-mediated entanglement of parametrically driven spin qubits via sidebands

Authors: V. Srinivasa, J. M. Taylor, J. R. Petta

Abstract: We consider a pair of quantum dot-based spin qubits that interact via microwave photons in a superconducting cavity, and that are also parametrically driven by separate external electric fields. For this system, we formulate a model for spin qubit entanglement in the presence of mutually off-resonant qubit and cavity frequencies. We show that the sidebands generated via the driving fields enable h… ▽ More We consider a pair of quantum dot-based spin qubits that interact via microwave photons in a superconducting cavity, and that are also parametrically driven by separate external electric fields. For this system, we formulate a model for spin qubit entanglement in the presence of mutually off-resonant qubit and cavity frequencies. We show that the sidebands generated via the driving fields enable highly tunable qubit-qubit entanglement using only ac control and without requiring the qubit and cavity frequencies to be tuned into simultaneous resonance. The model we derive can be mapped to a variety of qubit types, including detuning-driven one-electron spin qubits in double quantum dots and three-electron resonant exchange qubits in triple quantum dots. The high degree of nonlinearity inherent in spin qubits renders these systems particularly favorable for parametric drive-activated entanglement. We determine multiple common resonance conditions for the two driven qubits and the cavity and identify experimentally relevant parameter regimes that enable the implementation of entangling gates with suppressed sensitivity to cavity photon occupation and decay. The parametrically driven sideband resonance approach we describe provides a promising route toward scalability and modularity in spin-based quantum information processing through drive-enabled tunability that can also be implemented in micromagnet-free electron and hole systems for spin-photon coupling. △ Less

Submitted 12 July, 2023; originally announced July 2023.

Comments: 21 pages, 3 figures

Develo** high-impedance superconducting resonators and on-chip filters for semiconductor quantum dot circuit quantum electrodynamics

Authors: X. Zhang, Z. Zhu, N. P. Ong, J. R. Petta

Abstract: Spin-photon coupling presents an enticing opportunity for the long-range coupling of spin qubits. The spin-photon coupling rate $g_{s}$ is proportional to the charge-photon coupling rate $g_{c}$. To move deeper into the strong coupling regime, $g_{c}$ can be enhanced by fabricating high-impedance cavities using high kinetic inductance films. Here we report dc transport and microwave response inves… ▽ More Spin-photon coupling presents an enticing opportunity for the long-range coupling of spin qubits. The spin-photon coupling rate $g_{s}$ is proportional to the charge-photon coupling rate $g_{c}$. To move deeper into the strong coupling regime, $g_{c}$ can be enhanced by fabricating high-impedance cavities using high kinetic inductance films. Here we report dc transport and microwave response investigations of niobium nitride (NbN) films of different thicknesses. The kinetic inductance increases rapidly as the film thickness is reduced below 50 nm and for 15 nm NbN films we measure a sheet kinetic inductance $L_{k,S}$ = 41.2 pH/$\Box$. As an application of the high kinetic inductance films, we fabricate compact LC filters that are commonly used to reduce microwave leakage in circuit quantum electrodynamics (cQED) devices. These filters feature up to 60 dB of attenuation near typical cavity resonance frequencies $f_c$ = 8 GHz. △ Less

Submitted 28 June, 2023; originally announced June 2023.

Journal ref: Phys. Rev. Applied 21, 014019 (2024)

Dispersive readout of a silicon quantum device using an atomic force microscope-based rf gate sensor

Authors: Artem O. Denisov, Gordian Fuchs, Seong W. Oh, Jason R. Petta

Abstract: We demonstrate dispersive charge sensing of Si/SiGe single and double quantum dots (DQD) by coupling sub-micron floating gates to a radio frequency reflectometry (rf-reflectometry) circuit using the tip of an atomic force microscope (AFM). Charge stability diagrams are obtained in the phase response of the reflected rf signal. We demonstrate single-electron dot-to-lead and dot-to-dot charge transi… ▽ More We demonstrate dispersive charge sensing of Si/SiGe single and double quantum dots (DQD) by coupling sub-micron floating gates to a radio frequency reflectometry (rf-reflectometry) circuit using the tip of an atomic force microscope (AFM). Charge stability diagrams are obtained in the phase response of the reflected rf signal. We demonstrate single-electron dot-to-lead and dot-to-dot charge transitions with a signal-to-noise ratio (SNR) of 2 and integration time of $τ~=~2.7~\mathrm{ms}$ and $τ~=~6.4~\mathrm{ms}$, respectively. The charge sensing SNR compares favorably with results obtained on conventional devices. Moreover, the small size of the floating gates largely eliminates the coupling to parasitic charge traps that can complicate the interpretation of the dispersive charge sensing data. △ Less

Submitted 9 May, 2023; originally announced May 2023.

Journal ref: Appl. Phys. Lett. 123, 093502 (2023)

Second Quantization: Gating a Quantum Dot Through the Sequential Removal of Single Electrons from a Nanoscale Floating Gate

Authors: Artem O. Denisov, Gordian Fuchs, Seong W. Oh, Jason R. Petta

Abstract: We use the tip of an atomic force microscope (AFM) to charge floating metallic gates defined on the surface of a Si/SiGe heterostructure. The AFM tip serves as an ideal and movable cryogenic switch, allowing us to bias a floating gate to a specific voltage and then lock the charge on the gate by withdrawing the tip. Biasing with an AFM tip allows us to reduce the size of a quantum dot floating gat… ▽ More We use the tip of an atomic force microscope (AFM) to charge floating metallic gates defined on the surface of a Si/SiGe heterostructure. The AFM tip serves as an ideal and movable cryogenic switch, allowing us to bias a floating gate to a specific voltage and then lock the charge on the gate by withdrawing the tip. Biasing with an AFM tip allows us to reduce the size of a quantum dot floating gate electrode down to $\sim100~\mathrm{nm}$. Measurements of the conductance through a quantum dot formed beneath the floating gate indicate that its charge changes in discrete steps. From the statistics of the single-electron leakage events, we determine the floating gate leakage resistance $R \sim 10^{19}~ \mathrm{Ohm}$ - a value immeasurable by conventional means. △ Less

Submitted 15 February, 2023; originally announced February 2023.

Journal ref: PRX Quantum 4, 030309 (2023)

Optimal control of a cavity-mediated iSWAP gate between silicon spin qubits

Authors: Steve M. Young, N. Tobias Jacobson, Jason R. Petta

Abstract: Semiconductor spin qubits may be coupled through a superconducting cavity to generate an entangling two-qubit gate. However, the fidelity of such an operation will be reduced by a variety of error mechanisms such as charge and magnetic noise, phonons, cavity loss, transitions to non-qubit states and, for electrons in silicon, excitation into other valley eigenstates. Here, we model the effects of… ▽ More Semiconductor spin qubits may be coupled through a superconducting cavity to generate an entangling two-qubit gate. However, the fidelity of such an operation will be reduced by a variety of error mechanisms such as charge and magnetic noise, phonons, cavity loss, transitions to non-qubit states and, for electrons in silicon, excitation into other valley eigenstates. Here, we model the effects of these error sources and the valley degree of freedom on the performance of a cavity-mediated two-qubit iSWAP gate. For valley splittings inadequately large relative to the interdot tunnel coupling within each qubit, we find that valley excitation may be a limiter to the fidelity of this two-qubit gate. In addition, we show tradeoffs between gating times and exposure to various error sources, identifying optimal operating regimes and device improvements that would have the greatest impact on the fidelity of the cavity-mediated spin iSWAP. Importantly, we find that while the impact of charge noise and phonon relaxation favor operation in the regime where the qubits are most spin-like to reduce sensitivity to these sources of noise, the combination of hyperfine noise and valley physics shifts the optimal regime to charge-like qubits with stronger effective spin-photon coupling so that gate times can be made as short as possible. In this regime, the primary limitation is the need to avoid Landau-Zener transitions as the gate is implemented. △ Less

Submitted 23 August, 2022; originally announced August 2022.

Journal ref: Phys. Rev. Applied 18, 064082 (2022)

High fidelity state preparation, quantum control, and readout of an isotopically enriched silicon spin qubit

Authors: A. R. Mills, C. R. Guinn, M. M. Feldman, A. J. Sigillito, M. J. Gullans, M. Rakher, J. Kerckhoff, C. A. C. Jackson, J. R. Petta

Abstract: Quantum systems must be prepared, controlled, and measured with high fidelity in order to perform complex quantum algorithms. Control fidelities have greatly improved in silicon spin qubits, but state preparation and readout fidelities have generally been poor. By operating with low electron temperatures and employing high-bandwidth cryogenic amplifiers, we demonstrate single qubit readout visibil… ▽ More Quantum systems must be prepared, controlled, and measured with high fidelity in order to perform complex quantum algorithms. Control fidelities have greatly improved in silicon spin qubits, but state preparation and readout fidelities have generally been poor. By operating with low electron temperatures and employing high-bandwidth cryogenic amplifiers, we demonstrate single qubit readout visibilities >99%, exceeding the threshold for quantum error correction. In the same device, we achieve average single qubit control fidelities >99.95%. Our results show that silicon spin qubits can be operated with high overall operation fidelity. △ Less

Submitted 20 April, 2022; originally announced April 2022.

Journal ref: Phys. Rev. Applied 18, 064028 (2022)

Microwave-frequency scanning gate microscopy of a Si/SiGe double quantum dot

Authors: Artem O. Denisov, Seong W. Oh, Gordian Fuchs, Adam R. Mills, Pengcheng Chen, Christopher R. Anderson, Mark F. Gyure, Arthur W. Barnard, Jason R. Petta

Abstract: Conventional quantum transport methods can provide quantitative information on spin, orbital, and valley states in quantum dots, but often lack spatial resolution. Scanning tunneling microscopy, on the other hand, provides exquisite spatial resolution of the local electronic density of states, but often at the expense of speed. Working to combine the spatial resolution and energy sensitivity of sc… ▽ More Conventional quantum transport methods can provide quantitative information on spin, orbital, and valley states in quantum dots, but often lack spatial resolution. Scanning tunneling microscopy, on the other hand, provides exquisite spatial resolution of the local electronic density of states, but often at the expense of speed. Working to combine the spatial resolution and energy sensitivity of scanning probe microscopy with the speed of microwave measurements, we couple a metallic probe tip to a Si/SiGe double quantum dot that is integrated with a local charge detector. We first demonstrate that a dc-biased tip can be used to change the charge occupancy of the double dot. We then apply microwave excitation through the scanning tip to drive photon-assisted tunneling transitions in the double dot. We infer the double dot energy level diagram from the frequency and detuning dependence of the photon-assisted tunneling resonance condition. These measurements allow us to resolve $\sim$65 $μ$eV excited states, an energy scale consistent with typical valley splittings in Si/SiGe. Future extensions of this approach may allow spatial map** of the valley splitting in Si devices, which is of fundamental importance for spin-based quantum processors. △ Less

Submitted 11 March, 2022; originally announced March 2022.

Journal ref: Nano Letters 22, 4807 (2022)

Semiconductor Spin Qubits

Authors: Guido Burkard, Thaddeus D. Ladd, John M. Nichol, Andrew Pan, Jason R. Petta

Abstract: The spin degree of freedom of an electron or a nucleus is one of the most basic properties of nature and functions as an excellent qubit, as it provides a natural two-level system that is insensitive to electric fields, leading to long quantum coherence times. We review the physics of semiconductor spin qubits, focusing not only on the early achievements of spin initialization, control, and readou… ▽ More The spin degree of freedom of an electron or a nucleus is one of the most basic properties of nature and functions as an excellent qubit, as it provides a natural two-level system that is insensitive to electric fields, leading to long quantum coherence times. We review the physics of semiconductor spin qubits, focusing not only on the early achievements of spin initialization, control, and readout in GaAs quantum dots, but also on recent advances in Si and Ge spin qubits, including improved charge control and readout, coupling to other quantum degrees of freedom, and scaling to larger system sizes. We begin by introducing the four major types of spin qubits: single spin qubits, donor spin qubits, singlet-triplet spin qubits, and exchange-only spin qubits. We then review the mesoscopic physics of quantum dots, including single-electron charging, valleys, and spin-orbit coupling. We next give a comprehensive overview of the physics of exchange interactions, a crucial resource for single- and two-qubit control in spin qubits. The bulk of this review is centered on the presentation of results from each major spin qubit type, the present limits of fidelity, and a brief overview of alternative spin qubit platforms. We then give a physical description of the impact of noise on semiconductor spin qubits, aided in large part by an introduction to the filter function formalism. Lastly, we review recent efforts to hybridize spin qubits with superconducting systems, including charge-photon coupling, spin-photon coupling, and long-range cavity-mediated spin-spin interactions. Cavity-based readout approaches are also discussed. This review is intended to give an appreciation for the future prospects of semiconductor spin qubits, while highlighting the key advances in mesoscopic physics over the past two decades that underlie the operation of modern quantum-dot and donor spin qubits. △ Less

Submitted 16 December, 2021; originally announced December 2021.

Comments: Rev. Mod. Phys. - Corrections and comments welcome

Journal ref: Rev. Mod. Phys. 95, 025003 (2023)

Two-qubit silicon quantum processor with operation fidelity exceeding 99%

Authors: A. R. Mills, C. R. Guinn, M. J. Gullans, A. J. Sigillito, M. M. Feldman, E. Nielsen, J. R. Petta

Abstract: Silicon spin qubits satisfy the necessary criteria for quantum information processing. However, a demonstration of high fidelity state preparation and readout combined with high fidelity single- and two-qubit gates, all of which must be present for quantum error correction, has been lacking. We use a two qubit Si/SiGe quantum processor to demonstrate state preparation and readout with fidelity ove… ▽ More Silicon spin qubits satisfy the necessary criteria for quantum information processing. However, a demonstration of high fidelity state preparation and readout combined with high fidelity single- and two-qubit gates, all of which must be present for quantum error correction, has been lacking. We use a two qubit Si/SiGe quantum processor to demonstrate state preparation and readout with fidelity over 97%, combined with both single- and two-qubit control fidelities exceeding 99%. The operation of the quantum processor is quantitatively characterized using gate set tomography and randomized benchmarking. Our results highlight the potential of silicon spin qubits to become a dominant technology in the development of intermediate-scale quantum processors. △ Less

Submitted 23 November, 2021; originally announced November 2021.

Journal ref: Science Advances 8, eabn5130 (2022)

Cryogen-free scanning gate microscope for the characterization of Si/Si$_{0.7}$Ge$_{0.3}$ quantum devices at milli-Kelvin temperatures

Authors: Seong Woo Oh, Artem O. Denisov, Pengcheng Chen, Jason R. Petta

Abstract: Silicon can be isotopically enriched, allowing for the fabrication of highly coherent semiconductor spin qubits. However, the conduction band of bulk Si exhibits a six-fold valley degeneracy, which may adversely impact the performance of silicon quantum devices. To date, the spatial characterization of valley states in Si remains limited. Moreover, techniques for probing valley states in functiona… ▽ More Silicon can be isotopically enriched, allowing for the fabrication of highly coherent semiconductor spin qubits. However, the conduction band of bulk Si exhibits a six-fold valley degeneracy, which may adversely impact the performance of silicon quantum devices. To date, the spatial characterization of valley states in Si remains limited. Moreover, techniques for probing valley states in functional electronic devices are needed. We describe here a cryogen-free scanning gate microscope for the characterization of Si/Si$_{0.7}$Ge$_{0.3}$ quantum devices at mK temperatures. The microscope is based on the Pan-walker design, with coarse positioning piezo stacks and a fine scanning piezo tube. A tungsten microscope tip is attached to a tuning fork for active control of the tip-to-sample distance. To reduce vibration noise from the pulse tube cooler, we utilize both active and passive vibration isolation mechanisms, and achieve a root-mean-square noise in $z$ of $\sim$ 2 nm. Our microscope is designed to characterize fully functioning Si/Si$_{0.7}$Ge$_{0.3}$ quantum devices. As a proof of concept, we use the microscope to manipulate the charge occupation of a Si quantum dot, opening up a range of possibilities for the exploration of quantum devices and materials. △ Less

Submitted 12 May, 2021; originally announced May 2021.

Journal ref: AIP Advances 11, 125122 (2021)

Spin digitizer for high-fidelity readout of a cavity-coupled silicon triple quantum dot

Authors: F. Borjans, X. Mi, J. R. Petta

Abstract: An important requirement for spin-based quantum information processing is reliable and fast readout of electron spin states, allowing for feedback and error correction. However, common readout techniques often require additional gate structures hindering device scaling or impose stringent constraints on the tuning configuration of the sensed quantum dots. Here, we operate an in-line charge sensor… ▽ More An important requirement for spin-based quantum information processing is reliable and fast readout of electron spin states, allowing for feedback and error correction. However, common readout techniques often require additional gate structures hindering device scaling or impose stringent constraints on the tuning configuration of the sensed quantum dots. Here, we operate an in-line charge sensor within a triple quantum dot, where one of the dots is coupled to a microwave cavity and used to readout the charge states of the other two dots. Owing to the proximity of the charge sensor, we observe a near-digital sensor response with a power signal-to-noise ratio >450 at an integration time of $t_{\rm int}$ = 1 $μ$s. Despite small singlet-triplet splittings $\approx$40 $μ$eV, we further utilize the sensor to measure the spin relaxation time of a singlet-triplet qubit, achieving an average single-shot spin readout fidelity >99%. Our approach enables high-fidelity spin readout, combining minimal device overhead with flexible qubit operation in semiconductor quantum devices. △ Less

Submitted 8 April, 2021; originally announced April 2021.

Journal ref: Phys. Rev. Applied 15, 044052 (2021)

Probing the Spatial Variation of the Inter-Valley Tunnel Coupling in a Silicon Triple Quantum Dot

Authors: F. Borjans, X. Zhang, X. Mi, G. Cheng, N. Yao, C. A. C. Jackson, L. F. Edge, J. R. Petta

Abstract: Electrons confined in silicon quantum dots exhibit orbital, spin, and valley degrees of freedom. The valley degree of freedom originates from the bulk bandstructure of silicon, which has six degenerate electronic minima. The degeneracy can be lifted in silicon quantum wells due to strain and electronic confinement, but the "valley splitting" of the two lowest lying valleys is known to be sensitive… ▽ More Electrons confined in silicon quantum dots exhibit orbital, spin, and valley degrees of freedom. The valley degree of freedom originates from the bulk bandstructure of silicon, which has six degenerate electronic minima. The degeneracy can be lifted in silicon quantum wells due to strain and electronic confinement, but the "valley splitting" of the two lowest lying valleys is known to be sensitive to atomic-scale disorder. Large valley splittings are desirable to have a well-defined spin qubit. In addition, an understanding of the inter-valley tunnel coupling that couples different valleys in adjacent quantum dots is extremely important, as the resulting gaps in the energy level diagram may affect the fidelity of charge and spin transfer protocols in silicon quantum dot arrays. Here we use microwave spectroscopy to probe spatial variations in the valley splitting, and the intra- and inter-valley tunnel couplings ($t_{ij}$ and $t'_{ij}$) that couple dots $i$ and $j$ in a triple quantum dot (TQD). We uncover large spatial variations in the ratio of inter-valley to intra-valley tunnel couplings $t_{12}'/t_{12}=0.90$ and $t_{23}'/t_{23}=0.56$. By tuning the interdot tunnel barrier we also show that $t'_{ij}$ scales linearly with $t_{ij}$, as expected from theory. The results indicate strong interactions between different valley states on neighboring dots, which we attribute to local inhomogeneities in the silicon quantum well. △ Less

Submitted 29 January, 2021; originally announced January 2021.

Journal ref: PRX Quantum 2, 020309 (2021)

Nuclear spin readout in a cavity-coupled hybrid quantum dot-donor system

Authors: Jonas Mielke, Jason R. Petta, Guido Burkard

Abstract: Nuclear spins show long coherence times and are well isolated from the environment, which are properties making them promising for quantum information applications. Here, we present a method for nuclear spin readout by probing the transmission of a microwave resonator. We consider a single electron in a silicon quantum dot-donor device interacting with a microwave resonator via the electric dipole… ▽ More Nuclear spins show long coherence times and are well isolated from the environment, which are properties making them promising for quantum information applications. Here, we present a method for nuclear spin readout by probing the transmission of a microwave resonator. We consider a single electron in a silicon quantum dot-donor device interacting with a microwave resonator via the electric dipole coupling and subjected to a homogeneous magnetic field and a transverse magnetic field gradient. In our scenario, the electron spin interacts with a $^{31}\mathrm{P}$ defect nuclear spin via the hyperfine interaction. We theoretically investigate the influence of the P nuclear spin state on the microwave transmission through the cavity and show that nuclear spin readout is feasible with current state-of-the-art devices. Moreover, we identify optimal readout points with strong signal contrast to facilitate the experimental implementation of nuclear spin readout. Furthermore, we investigate the potential for achieving coherent excitation exchange between a nuclear spin qubit and cavity photons. △ Less

Submitted 17 May, 2021; v1 submitted 2 December, 2020; originally announced December 2020.

Comments: 8+11 pages, 6+4 figures, v2: substantial revision and focus on dot-donor system

Journal ref: PRX Quantum 2, 020347 (2021)

Coherent transport of spin by adiabatic passage in quantum dot arrays

Authors: M. J. Gullans, J. R. Petta

Abstract: We introduce an adiabatic transfer protocol for spin states in large quantum dot arrays that is based on time-dependent modulation of the Heisenberg exchange interaction in the presence of a magnetic field gradient. We refer to this protocol as spin-CTAP (coherent transport by adiabatic passage) in analogy to a related protocol developed for charge state transfer in quantum dot arrays. The insensi… ▽ More We introduce an adiabatic transfer protocol for spin states in large quantum dot arrays that is based on time-dependent modulation of the Heisenberg exchange interaction in the presence of a magnetic field gradient. We refer to this protocol as spin-CTAP (coherent transport by adiabatic passage) in analogy to a related protocol developed for charge state transfer in quantum dot arrays. The insensitivity of this adiabatic protocol to pulse imperfections has potential advantages for reading out extended spin qubit arrays. When the static exchange interaction varies across the array, a quantum-controlled version of spin-CTAP is possible, where the transfer process is conditional on the spin states in the middle of the array. This conditional operation can be used to generate N-qubit entangled GHZ states. Using a realistic noise model, we analyze the robustness of the spin-CTAP operations and find that high-fidelity (>95%) spin eigenstate transfer and GHZ state preparation is feasible in current devices. △ Less

Submitted 17 September, 2020; v1 submitted 20 July, 2020; originally announced July 2020.

Comments: 11 pages, 8 figures, comments welcome; v2: Minor updates

Journal ref: Phys. Rev. B 102, 155404 (2020)

Spin shuttling in a silicon double quantum dot

Authors: Florian Ginzel, Adam R. Mills, Jason R. Petta, Guido Burkard

Abstract: The transport of quantum information between different nodes of a quantum device is among the challenging functionalities of a quantum processor. In the context of spin qubits, this requirement can be met by coherent electron spin shuttling between semiconductor quantum dots. Here we theoretically study a minimal version of spin shuttling between two quantum dots. To this end, we analyze the dynam… ▽ More The transport of quantum information between different nodes of a quantum device is among the challenging functionalities of a quantum processor. In the context of spin qubits, this requirement can be met by coherent electron spin shuttling between semiconductor quantum dots. Here we theoretically study a minimal version of spin shuttling between two quantum dots. To this end, we analyze the dynamics of an electron during a detuning sweep in a silicon double quantum dot (DQD) occupied by one electron. Possibilities and limitations of spin transport are investigated. Spin-orbit interaction and the Zeeman effect in an inhomogeneous magnetic field play an important role for spin shuttling and are included in our model. Interactions that couple the position, spin and valley degrees of freedom open a number of avoided crossings in the spectrum allowing for diabatic transitions and interfering paths. The outcomes of single and repeated spin shuttling protocols are explored by means of numerical simulations and an approximate analytical model based on the solution of the Landau--Zener problem. We find that a spin infidelity as low as $1-F_s\lesssim 0.002$ with a relatively fast level velocity of $α= 600\, μ$eV/ns is feasible for optimal choices of parameters or by making use of constructive interference. △ Less

Submitted 7 July, 2020; originally announced July 2020.

Comments: 13 pages, 7 figures

Journal ref: Phys. Rev. B 102, 195418 (2020)

Split-Gate Cavity Coupler for Silicon Circuit Quantum Electrodynamics

Authors: F. Borjans, X. Croot, S. Putz, X. Mi, S. M. Quinn, A. Pan, J. Kerckhoff, E. J. Pritchett, C. A. Jackson, L. F. Edge, R. S. Ross, T. D. Ladd, M. G. Borselli, M. F. Gyure, J. R. Petta

Abstract: Coherent charge-photon and spin-photon coupling has recently been achieved in silicon double quantum dots (DQD). Here we demonstrate a versatile split-gate cavity-coupler that allows more than one DQD to be coupled to the same microwave cavity. Measurements of the cavity transmission as a function of level detuning yield a charge cavity coupling rate $g_c/2π$ = 58 MHz, charge decoherence rate… ▽ More Coherent charge-photon and spin-photon coupling has recently been achieved in silicon double quantum dots (DQD). Here we demonstrate a versatile split-gate cavity-coupler that allows more than one DQD to be coupled to the same microwave cavity. Measurements of the cavity transmission as a function of level detuning yield a charge cavity coupling rate $g_c/2π$ = 58 MHz, charge decoherence rate $γ_c/2π$ = 36 MHz, and cavity decay rate $κ/2π$ = 1.2 MHz. The charge cavity coupling rate is in good agreement with device simulations. Our coupling technique can be extended to enable simultaneous coupling of multiple DQDs to the same cavity mode, opening the door to long-range coupling of semiconductor qubits using microwave frequency photons. △ Less

Submitted 2 March, 2020; originally announced March 2020.

Journal ref: Appl. Phys. Lett. 116, 234001 (2020)

Computer-automated tuning procedures for semiconductor quantum dot arrays

Authors: A. R. Mills, M. M. Feldman, C. Monical, P. J. Lewis, K. W. Larson, A. M. Mounce, J. R. Petta

Abstract: As with any quantum computing platform, semiconductor quantum dot devices require sophisticated hardware and controls for operation. The increasing complexity of quantum dot devices necessitates the advancement of automated control software and image recognition techniques for rapidly evaluating charge stability diagrams. We use an image analysis toolbox developed in Python to automate the calibra… ▽ More As with any quantum computing platform, semiconductor quantum dot devices require sophisticated hardware and controls for operation. The increasing complexity of quantum dot devices necessitates the advancement of automated control software and image recognition techniques for rapidly evaluating charge stability diagrams. We use an image analysis toolbox developed in Python to automate the calibration of virtual gates, a process that previously involved a large amount of user intervention. Moreover, we show that straightforward feedback protocols can be used to simultaneously tune multiple tunnel couplings in a triple quantum dot in a computer automated fashion. Finally, we adopt the use of a `tunnel coupling lever arm' to model the interdot barrier gate response and discuss how it can be used to more rapidly tune interdot tunnel couplings to the GHz values that are compatible with exchange gates. △ Less

Submitted 24 July, 2019; originally announced July 2019.

Journal ref: Appl. Phys. Lett. 115, 113501 (2019)

Coherent transfer of quantum information in silicon using resonant SWAP gates

Authors: A. J. Sigillito, M. J. Gullans, L. F. Edge, M. Borselli, J. R. Petta

Abstract: Solid state quantum processors based on spins in silicon quantum dots are emerging as a powerful platform for quantum information processing. High fidelity single- and two-qubit gates have recently been demonstrated and large extendable qubit arrays are now routinely fabricated. However, two-qubit gates are mediated through nearest-neighbor exchange interactions, which require direct wavefunction… ▽ More Solid state quantum processors based on spins in silicon quantum dots are emerging as a powerful platform for quantum information processing. High fidelity single- and two-qubit gates have recently been demonstrated and large extendable qubit arrays are now routinely fabricated. However, two-qubit gates are mediated through nearest-neighbor exchange interactions, which require direct wavefunction overlap. This limits the overall connectivity of these devices and is a major hurdle to realizing error correction, quantum random access memory, and multi-qubit quantum algorithms. To extend the connectivity, qubits can be shuttled around a device using quantum SWAP gates, but phase coherent SWAPs have not yet been realized in silicon devices. Here, we demonstrate a new single-step resonant SWAP gate. We first use the gate to efficiently initialize and readout our double quantum dot. We then show that the gate can move spin eigenstates in 100 ns with average fidelity $\bar{F}_{SWAP}^p$ = 98%. Finally, the transfer of arbitrary two-qubit product states is benchmarked using state tomography and Clifford randomized benchmarking, yielding an average fidelity of $\bar{F}_{SWAP}^c$ = 84% for gate operation times of ~300 ns. Through coherent spin transport, our resonant SWAP gate enables the coupling of non-adjacent qubits, thus paving the way to large scale experiments using silicon spin qubits. △ Less

Submitted 11 June, 2019; originally announced June 2019.

Journal ref: npj Quantum Info. 5, 110 (2019)

Protocol for a resonantly-driven three-qubit Toffoli gate with silicon spin qubits

Authors: M. J. Gullans, J. R. Petta

Abstract: The three-qubit Toffoli gate plays an important role in quantum error correction and complex quantum algorithms such as Shor's factoring algorithm, motivating the search for efficient implementations of this gate. Here we introduce a Toffoli gate suitable for exchange-coupled electron spin qubits in silicon quantum dot arrays. Our protocol is a natural extension of a previously demonstrated resona… ▽ More The three-qubit Toffoli gate plays an important role in quantum error correction and complex quantum algorithms such as Shor's factoring algorithm, motivating the search for efficient implementations of this gate. Here we introduce a Toffoli gate suitable for exchange-coupled electron spin qubits in silicon quantum dot arrays. Our protocol is a natural extension of a previously demonstrated resonantly driven CNOT gate for silicon spin qubits. It is based on a single exchange pulse combined with a resonant microwave drive, with an operation time on the order of 100 ns and fidelity exceeding 99%. We analyze the impact of calibration errors and 1/f noise on the gate fidelity and compare the gate performance to Toffoli gates synthesized from two-qubit gates. Our approach is readily generalized to other controlled three-qubit gates such as the Deutsch and Fredkin gates. △ Less

Submitted 16 May, 2019; originally announced May 2019.

Journal ref: Phys. Rev. B 100, 085419 (2019)

Superconductor-semiconductor hybrid cavity quantum electrodynamics

Authors: Guido Burkard, Michael J. Gullans, Xiao Mi, Jason R. Petta

Abstract: Light-matter interactions at the single particle level have generally been explored in the context of atomic, molecular, and optical physics. Recent advances motivated by quantum information science have made it possible to explore coherent interactions between photons trapped in superconducting cavities and superconducting qubits. Spins in semiconductors can have exceptionally long spin coherence… ▽ More Light-matter interactions at the single particle level have generally been explored in the context of atomic, molecular, and optical physics. Recent advances motivated by quantum information science have made it possible to explore coherent interactions between photons trapped in superconducting cavities and superconducting qubits. Spins in semiconductors can have exceptionally long spin coherence times and can be isolated in silicon, the workhorse material of the semiconductor microelectronic industry. Here, we review recent advances in hybrid "super-semi" quantum systems that coherently couple superconducting cavities to semiconductor quantum dots. We first present an overview of the underlying physics that governs the behavior of superconducting cavities, semiconductor quantum dots, and their modes of interaction. We then survey experimental progress in the field, focusing on recent demonstrations of cavity quantum electrodynamics in the strong coupling regime with a single charge and a single spin. Finally, we broadly discuss promising avenues of future research. △ Less

Submitted 3 May, 2019; originally announced May 2019.

Comments: Review article - Send comments and reference suggestions to Petta

Journal ref: Nature Reviews Physics (2020)

Long-Range Microwave Mediated Interactions Between Electron Spins

Authors: F. Borjans, X. G. Croot, X. Mi, M. J. Gullans, J. R. Petta

Abstract: Entangling gates for electron spins in semiconductor quantum dots are generally based on exchange, a short-ranged interaction that requires wavefunction overlap. Coherent spin-photon coupling raises the prospect of using photons as long-distance interconnects for spin qubits. Realizing a key milestone for spin-based quantum information processing, we demonstrate microwave-mediated spin-spin intera… ▽ More Entangling gates for electron spins in semiconductor quantum dots are generally based on exchange, a short-ranged interaction that requires wavefunction overlap. Coherent spin-photon coupling raises the prospect of using photons as long-distance interconnects for spin qubits. Realizing a key milestone for spin-based quantum information processing, we demonstrate microwave-mediated spin-spin interactions between two electrons that are physically separated by more than 4 mm. Coherent spin-photon coupling is demonstrated for each individual spin using microwave transmission spectroscopy. An enhanced vacuum Rabi splitting is observed when both spins are tuned into resonance with the cavity, indicative of a coherent spin-spin interaction. Our results demonstrate that microwave-frequency photons can be used as a resource to generate long-range two-qubit gates between spatially separated spins. △ Less

Submitted 2 May, 2019; originally announced May 2019.

Journal ref: Nature 577, 195 (2020)

Flop**-mode electric dipole spin resonance

Authors: X. Croot, X. Mi, S. Putz, M. Benito, F. Borjans, G. Burkard, J. R. Petta

Abstract: Traditional approaches to controlling single spins in quantum dots require the generation of large electromagnetic fields to drive many Rabi oscillations within the spin coherence time. We demonstrate "flop**-mode" electric dipole spin resonance, where an electron is electrically driven in a Si/SiGe double quantum dot in the presence of a large magnetic field gradient. At zero detuning, charge d… ▽ More Traditional approaches to controlling single spins in quantum dots require the generation of large electromagnetic fields to drive many Rabi oscillations within the spin coherence time. We demonstrate "flop**-mode" electric dipole spin resonance, where an electron is electrically driven in a Si/SiGe double quantum dot in the presence of a large magnetic field gradient. At zero detuning, charge delocalization across the double quantum dot enhances coupling to the drive field and enables low power electric dipole spin resonance. Through dispersive measurements of the single electron spin state, we demonstrate a nearly three order of magnitude improvement in driving efficiency using flop**-mode resonance, which should facilitate low power spin control in quantum dot arrays. △ Less

Submitted 1 May, 2019; originally announced May 2019.

Journal ref: Phys. Rev. Research 2, 012006 (2020)

Electric-field control and noise protection of the flop**-mode spin qubit

Authors: Monica Benito, Xanthe Croot, Christoph Adelsberger, Stefan Putz, Xiao Mi, Jason R. Petta, Guido Burkard

Abstract: We propose and analyze a novel "flop**-mode" mechanism for electric dipole spin resonance based on the delocalization of a single electron across a double quantum dot confinement potential. Delocalization of the charge maximizes the electronic dipole moment compared to the conventional single dot spin resonance configuration. We present a theoretical investigation of the flop**-mode spin qubit… ▽ More We propose and analyze a novel "flop**-mode" mechanism for electric dipole spin resonance based on the delocalization of a single electron across a double quantum dot confinement potential. Delocalization of the charge maximizes the electronic dipole moment compared to the conventional single dot spin resonance configuration. We present a theoretical investigation of the flop**-mode spin qubit properties through the crossover from the double to the single dot configuration by calculating effective spin Rabi frequencies and single-qubit gate fidelities. The flop**-mode regime optimizes the artificial spin-orbit effect generated by an external micromagnet and draws on the existence of an externally controllable sweet spot, where the coupling of the qubit to charge noise is highly suppressed. We further analyze the sweet spot behavior in the presence of a longitudinal magnetic field gradient, which gives rise to a second order sweet spot with reduced sensitivity to charge fluctuations. △ Less

Submitted 26 August, 2019; v1 submitted 30 April, 2019; originally announced April 2019.

Comments: 10 pages, 5 figures

MSC Class: 81V65

Journal ref: Phys. Rev. B 100, 125430 (2019)

Site-selective quantum control in an isotopically enriched 28Si/SiGe quadruple quantum dot

Authors: A. J. Sigillito, J. C. Loy, D. M. Zajac, M. J. Gullans, L. F. Edge, J. R. Petta

Abstract: Silicon spin qubits are a promising quantum computing platform offering long coherence times, small device sizes, and compatibility with industry-backed device fabrication techniques. In recent years, high fidelity single-qubit and two-qubit operations have been demonstrated in Si. Here, we demonstrate coherent spin control in a quadruple quantum dot fabricated using isotopically enriched 28Si. We… ▽ More Silicon spin qubits are a promising quantum computing platform offering long coherence times, small device sizes, and compatibility with industry-backed device fabrication techniques. In recent years, high fidelity single-qubit and two-qubit operations have been demonstrated in Si. Here, we demonstrate coherent spin control in a quadruple quantum dot fabricated using isotopically enriched 28Si. We tune the ground state charge configuration of the quadruple dot down to the single electron regime and demonstrate tunable interdot tunnel couplings as large as 20 GHz, which enables exchange-based two-qubit gate operations. Site-selective single spin rotations are achieved using electric dipole spin resonance in a magnetic field gradient. We execute a resonant-CNOT gate between two adjacent spins in 270 ns. △ Less

Submitted 14 March, 2019; originally announced March 2019.

Journal ref: Phys. Rev. Applied 11, 061006 (2019)

Optimized cavity-mediated dispersive two-qubit gates between spin qubits

Authors: M. Benito, J. R. Petta, Guido Burkard

Abstract: The recent realization of a coherent interface between a single electron in a silicon quantum dot and a single photon trapped in a superconducting cavity opens the way for implementing photon-mediated two-qubit entangling gates. In order to couple a spin to the cavity electric field some type of spin-charge hybridization is needed, which impacts spin control and coherence. In this work we propose… ▽ More The recent realization of a coherent interface between a single electron in a silicon quantum dot and a single photon trapped in a superconducting cavity opens the way for implementing photon-mediated two-qubit entangling gates. In order to couple a spin to the cavity electric field some type of spin-charge hybridization is needed, which impacts spin control and coherence. In this work we propose a cavity-mediated two-qubit gate and calculate cavity-mediated entangling gate fidelities in the dispersive regime, accounting for errors due to the spin-charge hybridization, as well as photon- and phonon-induced decays. By optimizing the degree of spin-charge hybridization, we show that two-qubit gates mediated by cavity photons are capable of reaching fidelities exceeding 90% in present-day device architectures. High iSWAP gate fidelities are achievable even in the presence of charge noise at the level of $2\,μ\text{eV}$. △ Less

Submitted 20 February, 2019; originally announced February 2019.

Comments: 10 pages, 5 figures

Journal ref: Phys. Rev. B 100, 081412 (2019)

Single-Spin Relaxation in a Synthetic Spin-Orbit Field

Authors: F. Borjans, D. M. Zajac, T. M. Hazard, J. R. Petta

Abstract: Strong magnetic field gradients can produce a synthetic spin-orbit interaction that allows for high fidelity electrical control of single electron spins. We investigate how a field gradient impacts the spin relaxation time T_1 by measuring T_1 as a function of magnetic field B in silicon. The interplay of charge noise, magnetic field gradients, phonons, and conduction band valleys leads to a maxim… ▽ More Strong magnetic field gradients can produce a synthetic spin-orbit interaction that allows for high fidelity electrical control of single electron spins. We investigate how a field gradient impacts the spin relaxation time T_1 by measuring T_1 as a function of magnetic field B in silicon. The interplay of charge noise, magnetic field gradients, phonons, and conduction band valleys leads to a maximum relaxation time of 160 ms at low field, a strong spin-valley relaxation hotspot at intermediate fields, and a B^4 scaling at high fields. T_1 is found to decrease with lattice temperature T_lat as well as with added electrical noise. In comparison, samples without micromagnets have a significantly longer T_1. Optimization of the micromagnet design, combined with reductions in charge noise and electron temperature, may further extend T_1 in devices with large magnetic field gradients. △ Less

Submitted 2 November, 2018; originally announced November 2018.

Journal ref: Phys. Rev. Applied 11, 044063 (2019)

Shuttling a single charge across a one-dimensional array of silicon quantum dots

Authors: A. R. Mills, D. M. Zajac, M. J. Gullans, F. J. Schupp, T. M. Hazard, J. R. Petta

Abstract: Significant advances have been made towards fault-tolerant operation of silicon spin qubits, with single qubit fidelities exceeding 99.9%, several demonstrations of two-qubit gates based on exchange coupling, and the achievement of coherent single spin-photon coupling. Coupling arbitrary pairs of spatially separated qubits in a quantum register poses a significant challenge as most qubit systems a… ▽ More Significant advances have been made towards fault-tolerant operation of silicon spin qubits, with single qubit fidelities exceeding 99.9%, several demonstrations of two-qubit gates based on exchange coupling, and the achievement of coherent single spin-photon coupling. Coupling arbitrary pairs of spatially separated qubits in a quantum register poses a significant challenge as most qubit systems are constrained to two dimensions (2D) with nearest neighbor connectivity. For spins in silicon, new methods for quantum state transfer should be developed to achieve connectivity beyond nearest-neighbor exchange. Here we demonstrate shuttling of a single electron across a linear array of 9 series-coupled Si quantum dots in ~50 ns via a series of pairwise interdot charge transfers. By progressively constructing more complex pulse sequences we perform parallel shuttling of 2 and 3 electrons at a time through the 9-dot array. These experiments establish that physical transport of single electrons is feasible in large silicon quantum dot arrays. △ Less

Submitted 11 September, 2018; originally announced September 2018.

Journal ref: Nat Commun. 10, 1063 (2019)

A quadrupolar exchange-only spin qubit

Authors: Maximilian Russ, J. R. Petta, Guido Burkard

Abstract: We propose a quadrupolar exchange-only spin (QUEX) qubit that is highly robust against charge noise and nuclear spin dephasing, the dominant decoherence mechanisms in quantum dots. The qubit consists of four electrons trapped in three quantum dots, and operates in a decoherence-free subspace to mitigate dephasing due to nuclear spins. To reduce sensitivity to charge noise, the qubit can be complet… ▽ More We propose a quadrupolar exchange-only spin (QUEX) qubit that is highly robust against charge noise and nuclear spin dephasing, the dominant decoherence mechanisms in quantum dots. The qubit consists of four electrons trapped in three quantum dots, and operates in a decoherence-free subspace to mitigate dephasing due to nuclear spins. To reduce sensitivity to charge noise, the qubit can be completely operated at an extended charge noise sweet spot that is first-order insensitive to electrical fluctuations. Due to on-site exchange mediated by the Coulomb interaction, the qubit energy splitting is electrically controllable and can amount to several GHz even in the ``off" configuration, making it compatible with conventional microwave cavities. △ Less

Submitted 27 July, 2018; originally announced July 2018.

Journal ref: Phys. Rev. Lett. 121, 177701 (2018)

Electrically Protected Valley-Orbit Qubits in Silicon

Authors: X. Mi, S. Kohler, J. R. Petta

Abstract: Electrons confined in Si quantum dots possess orbital, spin, and valley degrees of freedom (d.o.f.). We perform Landau-Zener-Stuckelberg-Majorana (LZSM) interferometry on a Si double quantum dot that is strongly coupled to a microwave cavity to probe the valley d.o.f. The resulting LZSM interference pattern is asymmetric as a function of level detuning and persists for drive periods that are much… ▽ More Electrons confined in Si quantum dots possess orbital, spin, and valley degrees of freedom (d.o.f.). We perform Landau-Zener-Stuckelberg-Majorana (LZSM) interferometry on a Si double quantum dot that is strongly coupled to a microwave cavity to probe the valley d.o.f. The resulting LZSM interference pattern is asymmetric as a function of level detuning and persists for drive periods that are much longer than typical charge decoherence times. By correlating the LZSM interference pattern with charge noise measurements, we show that valley-orbit hybridization provides some protection from the deleterious effects of charge noise. Our work opens the possibility of harnessing the valley d.o.f. to engineer charge-noise-insensitive qubits in Si. △ Less

Submitted 11 May, 2018; originally announced May 2018.

Journal ref: Phys. Rev. B 98, 161404 (2018)

Realizing a Circuit Analog of an Optomechanical System with Longitudinally Coupled Superconducting Resonators

Authors: C. Eichler, J. R. Petta

Abstract: We realize a superconducting circuit analog of the generic cavity-optomechanical Hamiltonian by longitudinally coupling two superconducting resonators, which are an order of magnitude different in frequency. We achieve longitudinal coupling by embedding a superconducting quantum interference device (SQUID) into a high frequency resonator, making its resonance frequency depend on the zero point cur… ▽ More We realize a superconducting circuit analog of the generic cavity-optomechanical Hamiltonian by longitudinally coupling two superconducting resonators, which are an order of magnitude different in frequency. We achieve longitudinal coupling by embedding a superconducting quantum interference device (SQUID) into a high frequency resonator, making its resonance frequency depend on the zero point current fluctuations of a nearby low frequency LC-resonator. By employing sideband drive fields we enhance the intrinsic coupling strength of about 15 kHz up to 280 kHz by controlling the amplitude of the drive field. Our results pave the way towards the exploration of optomechanical effects in a fully superconducting platform and could enable quantum optics experiments with photons in the yet unexplored radio frequency band. △ Less

Submitted 8 December, 2017; originally announced December 2017.

Journal ref: Phys. Rev. Lett. 120, 227702 (2018)

Microwave detection of electron-phonon interactions in a cavity-coupled double quantum dot

Authors: T. R. Hartke, Y. -Y. Liu, M. J. Gullans, J. R. Petta

Abstract: Quantum confinement leads to the formation of discrete electronic states in quantum dots. Here we probe electron-phonon interactions in a suspended InAs nanowire double quantum dot (DQD) that is electric-dipole coupled to a microwave cavity. We apply a finite bias across the wire to drive a steady state population in the DQD excited state, enabling a direct measurement of the electron-phonon coupl… ▽ More Quantum confinement leads to the formation of discrete electronic states in quantum dots. Here we probe electron-phonon interactions in a suspended InAs nanowire double quantum dot (DQD) that is electric-dipole coupled to a microwave cavity. We apply a finite bias across the wire to drive a steady state population in the DQD excited state, enabling a direct measurement of the electron-phonon coupling strength at the DQD transition energy. The amplitude and phase response of the cavity field exhibit features that are periodic in the DQD energy level detuning due to the phonon modes of the nanowire. The observed cavity phase shift is consistent with theory that predicts a renormalization of the cavity center frequency by coupling to phonons. △ Less

Submitted 13 November, 2017; originally announced November 2017.

Journal ref: Phys. Rev. Lett. 120, 097701 (2018)

Probing electron-phonon interactions in the charge-photon dynamics of cavity-coupled double quantum dots

Authors: M. J. Gullans, J. M. Taylor, J. R. Petta

Abstract: Electron-phonon coupling is known to play an important role in the charge dynamics of semiconductor quantum dots. Here we explore its role in the combined charge-photon dynamics of cavity-coupled double quantum dots. Previous work on these systems has shown that strong electron-phonon coupling leads to a large contribution to photoemission and gain from phonon-assisted emission and absorption proc… ▽ More Electron-phonon coupling is known to play an important role in the charge dynamics of semiconductor quantum dots. Here we explore its role in the combined charge-photon dynamics of cavity-coupled double quantum dots. Previous work on these systems has shown that strong electron-phonon coupling leads to a large contribution to photoemission and gain from phonon-assisted emission and absorption processes. We compare the effects of this phonon sideband in three commonly investigated gate-defined quantum dot material systems: InAs nanowires and GaAs and Si two-dimensional electron gases (2DEGs). We compare our theory with existing experimental data from cavity-coupled InAs nanowire and GaAs 2DEG double quantum dots and find quantitative agreement only when the phonon sideband and photoemission processes during lead tunneling are taken into account. Finally we show that the phonon sideband also leads to a sizable renormalization of the cavity frequency, which allows for direct spectroscopic probes of the electron-phonon coupling in these systems. △ Less

Submitted 3 November, 2017; originally announced November 2017.

Journal ref: Phys. Rev. B 97, 035305 (2018)

High-fidelity quantum gates in Si/SiGe double quantum dots

Authors: Maximilian Russ, D. M. Zajac, A. J. Sigillito, F. Borjans, J. M. Taylor, J. R. Petta, Guido Burkard

Abstract: Motivated by recent experiments of Zajac et al. [arXiv:1708.03530], we theoretically describe high-fidelity two-qubit gates using the exchange interaction between the spins in neighboring quantum dots subject to a magnetic field gradient. We use a combination of analytical calculations and numerical simulations to provide the optimal pulse sequences and parameter settings for the gate operation. W… ▽ More Motivated by recent experiments of Zajac et al. [arXiv:1708.03530], we theoretically describe high-fidelity two-qubit gates using the exchange interaction between the spins in neighboring quantum dots subject to a magnetic field gradient. We use a combination of analytical calculations and numerical simulations to provide the optimal pulse sequences and parameter settings for the gate operation. We present a novel synchronization method which avoids detrimental spin flips during the gate operation and provide details about phase mismatches accumulated during the two-qubit gates which occur due to residual exchange interaction, non-adiabatic pulses, and off-resonant driving. By adjusting the gate times, synchronizing the resonant and off-resonant transitions, and compensating these phase mismatches by phase control, the overall gate fidelity can be increased significantly. △ Less

Submitted 2 November, 2017; originally announced November 2017.

Comments: 10 pages, 5 figures

Journal ref: Phys. Rev. B 97, 085421 (2018)

A Coherent Spin-Photon Interface in Silicon

Authors: X. Mi, M. Benito, S. Putz, D. M. Zajac, J. M. Taylor, Guido Burkard, J. R. Petta

Abstract: Electron spins in silicon quantum dots are attractive systems for quantum computing due to their long coherence times and the promise of rapid scaling using semiconductor fabrication techniques. While nearest neighbor exchange coupling of two spins has been demonstrated, the interaction of spins via microwave frequency photons could enable long distance spin-spin coupling and "all-to-all" qubit co… ▽ More Electron spins in silicon quantum dots are attractive systems for quantum computing due to their long coherence times and the promise of rapid scaling using semiconductor fabrication techniques. While nearest neighbor exchange coupling of two spins has been demonstrated, the interaction of spins via microwave frequency photons could enable long distance spin-spin coupling and "all-to-all" qubit connectivity. Here we demonstrate strong-coupling between a single spin in silicon and a microwave frequency photon with spin-photon coupling rates g_s/(2π) > 10 MHz. The mechanism enabling coherent spin-photon interactions is based on spin-charge hybridization in the presence of a magnetic field gradient. In addition to spin-photon coupling, we demonstrate coherent control of a single spin in the device and quantum non-demolition spin state readout using cavity photons. These results open a direct path toward entangling single spins using microwave frequency photons. △ Less

Submitted 9 October, 2017; originally announced October 2017.

Journal ref: Nature 555, 599 (2018)

Input-output theory for spin-photon coupling in Si double quantum dots

Authors: Mónica Benito, X. Mi, J. M. Taylor, J. R. Petta, Guido Burkard

Abstract: The interaction of qubits via microwave frequency photons enables long-distance qubit-qubit coupling and facilitates the realization of a large-scale quantum processor. However, qubits based on electron spins in semiconductor quantum dots have proven challenging to couple to microwave photons. In this theoretical work we show that a sizable coupling for a single electron spin is possible via spin-… ▽ More The interaction of qubits via microwave frequency photons enables long-distance qubit-qubit coupling and facilitates the realization of a large-scale quantum processor. However, qubits based on electron spins in semiconductor quantum dots have proven challenging to couple to microwave photons. In this theoretical work we show that a sizable coupling for a single electron spin is possible via spin-charge hybridization using a magnetic field gradient in a silicon double quantum dot. Based on parameters already shown in recent experiments, we predict optimal working points to achieve a coherent spin-photon coupling, an essential ingredient for the generation of long-range entanglement. Furthermore, we employ input-output theory to identify observable signatures of spin-photon coupling in the cavity output field, which may provide guidance to the experimental search for strong coupling in such spin-photon systems and opens the way to cavity-based readout of the spin qubit. △ Less

Submitted 6 October, 2017; originally announced October 2017.

Journal ref: Phys. Rev. B 96, 235434 (2017)

Quantum CNOT Gate for Spins in Silicon

Authors: D. M. Zajac, A. J. Sigillito, M. Russ, F. Borjans, J. M. Taylor, G. Burkard, J. R. Petta

Abstract: Single qubit rotations and two-qubit CNOT operations are crucial ingredients for universal quantum computing. While high fidelity single qubit operations have been achieved using the electron spin degree of freedom, realizing a robust CNOT gate has been a major challenge due to rapid nuclear spin dephasing and charge noise. We demonstrate an efficient resonantly-driven CNOT gate for electron spins… ▽ More Single qubit rotations and two-qubit CNOT operations are crucial ingredients for universal quantum computing. While high fidelity single qubit operations have been achieved using the electron spin degree of freedom, realizing a robust CNOT gate has been a major challenge due to rapid nuclear spin dephasing and charge noise. We demonstrate an efficient resonantly-driven CNOT gate for electron spins in silicon. Our platform achieves single-qubit rotations with fidelities >99%, as verified by randomized benchmarking. Gate control of the exchange coupling allows a quantum CNOT gate to be implemented with resonant driving in ~200 ns. We use the CNOT gate to generate a Bell state with 75% fidelity, limited by quantum state readout. Our quantum dot device architecture opens the door to multi-qubit algorithms in silicon. △ Less

Submitted 11 August, 2017; originally announced August 2017.

Journal ref: Science 359, 439 (2018)

On-Chip Quantum Dot Light Source for Quantum State Readout

Authors: Y. -Y. Liu, J. Stehlik, X. Mi, T. Hartke, J. R. Petta

Abstract: We use microwave radiation generated by a semiconductor double quantum dot (DQD) micromaser for charge state detection. A cavity is populated with n_c ~ 6000 photons by driving a current through an emitter DQD. These photons are used to sense the charge state of a target DQD that is located at the opposite end of the cavity. Charge dynamics in the target DQD influence the output power and emission… ▽ More We use microwave radiation generated by a semiconductor double quantum dot (DQD) micromaser for charge state detection. A cavity is populated with n_c ~ 6000 photons by driving a current through an emitter DQD. These photons are used to sense the charge state of a target DQD that is located at the opposite end of the cavity. Charge dynamics in the target DQD influence the output power and emission frequency of the maser. Three different readout mechanisms are compared. The detection scheme requires no cavity input field and may potentially be used to improve the scalability of semiconductor and superconducting qubit readout technologies. △ Less

Submitted 27 July, 2017; originally announced July 2017.

Journal ref: Phys. Rev. Applied 9, 014030 (2018)

Phase locking of a semiconductor double quantum dot single atom maser

Authors: Y. -Y. Liu, T. Hartke, J. Stehlik, J. R. Petta

Abstract: We experimentally study the phase stabilization of a semiconductor double quantum dot (DQD) single atom maser by injection locking. A voltage-biased DQD serves as an electrically tunable microwave frequency gain medium. The statistics of the maser output field demonstrate that the maser can be phase locked to an external cavity drive, with a resulting phase noise of -99 dBc/Hz at a frequency offse… ▽ More We experimentally study the phase stabilization of a semiconductor double quantum dot (DQD) single atom maser by injection locking. A voltage-biased DQD serves as an electrically tunable microwave frequency gain medium. The statistics of the maser output field demonstrate that the maser can be phase locked to an external cavity drive, with a resulting phase noise of -99 dBc/Hz at a frequency offset of 1.3 MHz. The injection locking range, and the phase of the maser output relative to the injection locking input tone are in good agreement with Adler's theory. Furthermore, the electrically tunable DQD energy level structure allows us to rapidly switch the gain medium on and off, resulting in an emission spectrum that resembles a frequency comb. The free running frequency comb linewidth is ~8 kHz and can be improved to less than 1 Hz by operating the comb in the injection locked regime. △ Less

Submitted 24 July, 2017; originally announced July 2017.

Journal ref: Phys. Rev. A 96, 053816 (2017)

High Resolution Valley Spectroscopy of Si Quantum Dots

Authors: X. Mi, Csaba G. Peterfalvi, Guido Burkard, J. R. Petta

Abstract: We study an accumulation mode Si/SiGe double quantum dot (DQD) containing a single electron that is dipole coupled to microwave photons in a superconducting cavity. Measurements of the cavity transmission reveal dispersive features due to the DQD valley states in Si. The occupation of the valley states can be increased by raising temperature or applying a finite source-drain bias across the DQD, r… ▽ More We study an accumulation mode Si/SiGe double quantum dot (DQD) containing a single electron that is dipole coupled to microwave photons in a superconducting cavity. Measurements of the cavity transmission reveal dispersive features due to the DQD valley states in Si. The occupation of the valley states can be increased by raising temperature or applying a finite source-drain bias across the DQD, resulting in an increased signal. Using cavity input-output theory and a four-level model of the DQD, it is possible to efficiently extract valley splittings and the inter- and intra-valley tunnel couplings. △ Less

Submitted 20 April, 2017; originally announced April 2017.

Journal ref: Phys. Rev. Lett. 119, 176803 (2017)

Threshold Dynamics of a Semiconductor Single Atom Maser

Authors: Y. -Y. Liu, J. Stehlik, C. Eichler, X. Mi, T. Hartke, M. J. Gullans, J. M. Taylor, J. R. Petta

Abstract: We demonstrate a single-atom maser consisting of a semiconductor double quantum dot (DQD) that is embedded in a high quality factor microwave cavity. A finite bias drives the DQD out of equilibrium, resulting in sequential single electron tunneling and masing. We develop a dynamic tuning protocol that allows us to controllably increase the time-averaged repum** rate of the DQD at a fixed level d… ▽ More We demonstrate a single-atom maser consisting of a semiconductor double quantum dot (DQD) that is embedded in a high quality factor microwave cavity. A finite bias drives the DQD out of equilibrium, resulting in sequential single electron tunneling and masing. We develop a dynamic tuning protocol that allows us to controllably increase the time-averaged repum** rate of the DQD at a fixed level detuning, and quantitatively study the transition through the masing threshold. We further examine the crossover from incoherent to coherent emission by measuring the photon statistics across the masing transition. The observed threshold behavior is in agreement with an existing single atom maser theory when small corrections from lead emission are taken into account. △ Less

Submitted 6 April, 2017; originally announced April 2017.

Journal ref: Phys. Rev. Lett. 119, 097702 (2017)

Strong Coupling of a Single Electron in Silicon to a Microwave Photon

Authors: X. Mi, J. V. Cady, D. M. Zajac, P. W. Deelman, J. R. Petta

Abstract: Silicon is vital to the computing industry due to the high quality of its native oxide and well-established do** technologies. Isotopic purification has enabled quantum coherence times on the order of seconds, thereby placing silicon at the forefront of efforts to create a solid state quantum processor. We demonstrate strong coupling of a single electron in a silicon double quantum dot to the ph… ▽ More Silicon is vital to the computing industry due to the high quality of its native oxide and well-established do** technologies. Isotopic purification has enabled quantum coherence times on the order of seconds, thereby placing silicon at the forefront of efforts to create a solid state quantum processor. We demonstrate strong coupling of a single electron in a silicon double quantum dot to the photonic field of a microwave cavity, as shown by the observation of vacuum Rabi splitting. Strong coupling of a quantum dot electron to a cavity photon would allow for long-range qubit coupling and the long-range entanglement of electrons in semiconductor quantum dots. △ Less

Submitted 8 March, 2017; originally announced March 2017.

Journal ref: Science 355, 156 (2017)

Circuit Quantum Electrodynamics Architecture for Gate-Defined Quantum Dots in Silicon

Authors: X. Mi, J. V. Cady, D. M. Zajac, J. Stehlik, L. F. Edge, J. R. Petta

Abstract: We demonstrate a hybrid device architecture where the charge states in a double quantum dot (DQD) formed in a Si/SiGe heterostructure are read out using an on-chip superconducting microwave cavity. A quality factor Q = 5,400 is achieved by selectively etching away regions of the quantum well and by reducing photon losses through low-pass filtering of the gate bias lines. Homodyne measurements of t… ▽ More We demonstrate a hybrid device architecture where the charge states in a double quantum dot (DQD) formed in a Si/SiGe heterostructure are read out using an on-chip superconducting microwave cavity. A quality factor Q = 5,400 is achieved by selectively etching away regions of the quantum well and by reducing photon losses through low-pass filtering of the gate bias lines. Homodyne measurements of the cavity transmission reveal DQD charge stability diagrams and a charge-cavity coupling rate g_c/2pi = 23 MHz. These measurements indicate that electrons trapped in a Si DQD can be effectively coupled to microwave photons, potentially enabling coherent electron-photon interactions in silicon. △ Less

Submitted 9 February, 2017; v1 submitted 18 October, 2016; originally announced October 2016.

Journal ref: Appl. Phys. Lett. 110, 043502 (2017)

Electron Spin Resonance at the Level of 10000 Spins Using Low Impedance Superconducting Resonators

Authors: C. Eichler, A. J. Sigillito, S. A. Lyon, J. R. Petta

Abstract: We report on electron spin resonance (ESR) measurements of phosphorus donors localized in a 200 square micron area below the inductive wire of a lumped element superconducting resonator. By combining quantum limited parametric amplification with a low impedance microwave resonator design we are able to detect around 20000 spins with a signal-to-noise ratio (SNR) of 1 in a single shot. The 150 Hz c… ▽ More We report on electron spin resonance (ESR) measurements of phosphorus donors localized in a 200 square micron area below the inductive wire of a lumped element superconducting resonator. By combining quantum limited parametric amplification with a low impedance microwave resonator design we are able to detect around 20000 spins with a signal-to-noise ratio (SNR) of 1 in a single shot. The 150 Hz coupling strength between the resonator field and individual spins is significantly larger than the 1 - 10 Hz coupling rates obtained with typical coplanar waveguide resonator designs. Due to the larger coupling rate, we find that spin relaxation is dominated by radiative decay into the resonator and dependent upon the spin-resonator detuning, as predicted by Purcell. △ Less

Submitted 9 February, 2017; v1 submitted 17 August, 2016; originally announced August 2016.

Journal ref: Phys. Rev. Lett. 118, 037701 (2017)

Dispersive readout of valley splittings in cavity-coupled silicon quantum dots

Authors: Guido Burkard, J. R. Petta

Abstract: The bandstructure of bulk silicon has a six-fold valley degeneracy. Strain in the Si/SiGe quantum well system partially lifts the valley degeneracy, but the materials factors that set the splitting of the two lowest lying valleys are still under intense investigation. We propose a method for accurately determining the valley splitting in Si/SiGe double quantum dots embedded into a superconducting… ▽ More The bandstructure of bulk silicon has a six-fold valley degeneracy. Strain in the Si/SiGe quantum well system partially lifts the valley degeneracy, but the materials factors that set the splitting of the two lowest lying valleys are still under intense investigation. We propose a method for accurately determining the valley splitting in Si/SiGe double quantum dots embedded into a superconducting microwave resonator. We show that low lying valley states in the double quantum dot energy level spectrum lead to readily observable features in the cavity transmission. These features generate a "fingerprint" of the microscopic energy level structure of a semiconductor double quantum dot, providing useful information on valley splittings and intervalley coupling rates. △ Less

Submitted 29 July, 2016; originally announced July 2016.

Comments: 8 pages, 4 figures

Journal ref: Phys. Rev. B 94, 195305 (2016)

Double Quantum Dot Floquet Gain Medium

Authors: J. Stehlik, Y. -Y. Liu, C. Eichler, T. R. Hartke, X. Mi, M. J. Gullans, J. M. Taylor, J. R. Petta

Abstract: Strongly driving a two-level quantum system with light leads to a ladder of Floquet states separated by the photon energy. Nanoscale quantum devices allow the interplay of confined electrons, phonons, and photons to be studied under strong driving conditions. Here we show that a single electron in a periodically driven DQD functions as a "Floquet gain medium," where population imbalances in the DQ… ▽ More Strongly driving a two-level quantum system with light leads to a ladder of Floquet states separated by the photon energy. Nanoscale quantum devices allow the interplay of confined electrons, phonons, and photons to be studied under strong driving conditions. Here we show that a single electron in a periodically driven DQD functions as a "Floquet gain medium," where population imbalances in the DQD Floquet quasi-energy levels lead to an intricate pattern of gain and loss features in the cavity response. We further measure a large intra-cavity photon number n_c in the absence of a cavity drive field, due to equilibration in the Floquet picture. Our device operates in the absence of a dc current -- one and the same electron is repeatedly driven to the excited state to generate population inversion. These results pave the way to future studies of non-classical light and thermalization of driven quantum systems. △ Less

Submitted 27 July, 2016; originally announced July 2016.

Journal ref: Phys. Rev. X 6, 041027 (2016)