Showing 1–2 of 2 results for author: Petrov, V N
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Thermal conductivity for p-(Bi, Sb)$_{2}$Te$_{3}$ films of topological insulators
Authors:
L N Lukyanova,
Yu A Boikov,
O A Usov,
V A Danilov,
I V Makarenko,
V N Petrov
Abstract:
The temperature dependences of the total, crystal lattice and electronic thermal conductivities were investigated in films of topological insulators p-Bi$_{0.5}$Sb$_{1.5}$Te$_{3}$ and p-Bi$_{2}$Te$_{3}$ formed by discrete and thermal evaporation methods. The largest decrease in the lattice thermal conductivity owing to the scattering of long-wavelength phonons on the grain interfaces was observed…
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The temperature dependences of the total, crystal lattice and electronic thermal conductivities were investigated in films of topological insulators p-Bi$_{0.5}$Sb$_{1.5}$Te$_{3}$ and p-Bi$_{2}$Te$_{3}$ formed by discrete and thermal evaporation methods. The largest decrease in the lattice thermal conductivity owing to the scattering of long-wavelength phonons on the grain interfaces was observed in the films of solid solutions p-Bi$_{0.5}$Sb$_{1.5}$Te$_{3}$ deposited by discrete evaporation on the amorphous substrates of polyimide without thermal treatment. It is shown that in the p-Bi$_{0.5}$Sb$_{1.5}$Te$_{3}$ films with low thermal conductivity the energy dependence of the relaxation time is enhanced, which is specific for the topological insulators. The electronic thermal conductivity was determined taking into account the effective scattering parameter in the relaxation time approximation versus energy in the Lorentz number calculations. The observed increase of the electronic thermal conductivity within the temperature range of 40 - 80 K is related to the weakening of the electrical conductivity temperature dependence and is determined by the increase in the effective scattering parameter at low temperatures due to the effect of scattering on the point antisite and impurity defects. A correlation was established between the thermal conductivity and features of the morphology of the interlayer surface (0001) in the studied films.
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Submitted 10 July, 2022;
originally announced July 2022.
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Concept of multichannel spin-resolving electron analyzer based on Mott scattering
Authors:
Vladimir N. Strocov,
Vladimir N. Petrov,
J. Hugo Dil
Abstract:
Concept of a multichannel electron spin detector based on optical imaging principles and Mott scattering (iMott) is presented. A multichannel electron image produced by standard angle-resolving (photo) electron analyzer or microscope is re-imaged by an electrostatic lens at an accelerating voltage of 40 keV onto the Au target. Quasi-elastic electrons bearing spin asymmetry of the Mott scattering a…
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Concept of a multichannel electron spin detector based on optical imaging principles and Mott scattering (iMott) is presented. A multichannel electron image produced by standard angle-resolving (photo) electron analyzer or microscope is re-imaged by an electrostatic lens at an accelerating voltage of 40 keV onto the Au target. Quasi-elastic electrons bearing spin asymmetry of the Mott scattering are imaged by magnetic lenses onto position-sensitive electron CCDs whose differential signals yield the multichannel spin asymmetry image. Fundamental advantages of this concept include acceptance of inherently divergent electron sources from the electron analyzer or microscope focal plane as well as small aberrations achieved by virtue of high accelerating voltages, as demonstrated by extensive ray-tracing analysis. The efficiency gain compared to the single-channel Mott detector can be a factor of more than 1e4 which opens new prospects of spin-resolved spectroscopies in application not only to standard bulk and surface systems (Rashba effect, topological insulators, etc.) but also to buried heterostructures. The simultaneous spin detection and fast CCD readout enable efficient use of the iMott detectors at X-ray FEL facilities.
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Submitted 2 April, 2015; v1 submitted 30 December, 2014;
originally announced December 2014.
