Understanding voltage-controlled magnetic anisotropy effect for the manipulation of dipolar-dominated propagating spin waves
Authors:
Adrien. A. D. Petrillo,
Mouad Fattouhi,
Adriano Di Pietro,
Marta Alerany Solé,
Luis Lopez Diaz,
Gianfranco Durin,
Bert Koopmans,
Reinoud Lavrijsen
Abstract:
Spin waves, known for their ability to propagate without the involvement of moving charges, hold immense promise for on-chip information transfer and processing, offering a path toward post-CMOS computing technologies. This study investigates the potential synergy between propagating Damon-Eshbach spin waves and voltage-controlled magnetization in the pursuit of environmentally sustainable computi…
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Spin waves, known for their ability to propagate without the involvement of moving charges, hold immense promise for on-chip information transfer and processing, offering a path toward post-CMOS computing technologies. This study investigates the potential synergy between propagating Damon-Eshbach spin waves and voltage-controlled magnetization in the pursuit of environmentally sustainable computing solutions. Employing micromagnetic simulations, we assess the feasibility of utilizing spin waves in DE mode in conjunction with localized voltage-induced alterations in surface anisotropy to enable low-energy logic operations. Our findings underscore the critical importance of selecting an optimal excitation frequency and gate width, which significantly influence the efficiency of the phase shift induced in propagating spin waves. Notably, we demonstrate that a realistic phase shift of 2.5$\left[ π\ \text{mrad}\right]$ can be achieved at a Co(5nm)/MgO material system via the VCMA effect. Moreover, by tuning the excitation frequency, Co layer thickness, gate width, and the use of a GdO\textsubscript{x} dielectric, we illustrate the potential to enhance the phase shift by a factor of 200 when compared to MgO dielectrics. This research contributes valuable insights towards develo** next-generation computing technologies with reduced energy consumption.
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Submitted 5 February, 2024;
originally announced February 2024.
Strain effects on magnetic compensation and spin reorientation transition of Co/Gd synthetic ferrimagnets
Authors:
Giovanni Masciocchi,
Thomas J. Kools,
**zhi Li,
Adrien A. D. Petrillo,
Bert Koopmans,
Reinoud Lavrijsen,
Andreas Kehlberger,
Mathias Kläui
Abstract:
Synthetic ferrimagnets are an attractive materials class for spintronics as they provide access to all-optical switching of magnetization and, at the same time, allow for ultrafast domain wall motion at angular momentum compensation. In this work, we systematically study the effects of strain on the perpendicular magnetic anisotropy and magnetization compensation of Co/Gd and Co/Gd/Co/Gd synthetic…
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Synthetic ferrimagnets are an attractive materials class for spintronics as they provide access to all-optical switching of magnetization and, at the same time, allow for ultrafast domain wall motion at angular momentum compensation. In this work, we systematically study the effects of strain on the perpendicular magnetic anisotropy and magnetization compensation of Co/Gd and Co/Gd/Co/Gd synthetic ferrimagnets. Firstly, the spin reorientation transition of a bilayer system is investigated in wedge type samples, where we report an increase in the perpendicular magnetic anisotropy in the presence of in-plane strain. Using a model for magnetostatics and spin reorientation transition in this type of system, we confirm that the observed changes in anisotropy field are mainly due to the Co magnetoelastic anisotropy. Secondly, the magnetization compensation of a quadlayer is studied. We find that magnetization compensation of this synthetic ferrimagnetic system is not altered by external strain. This confirms the resilience of this material system against strain that may be induced during the integration process, making Co/Gd ferrimagnets suitable candidates for spintronics applications.
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Submitted 31 March, 2023; v1 submitted 27 March, 2023;
originally announced March 2023.
