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In-Grain Ferroelectric Switching in Sub-5 nm Thin AlScN Films at 1 V
Authors:
Georg Schönweger,
Niklas Wolff,
Md Redwanul Islam,
Maike Gremmel,
Adrian Petraru,
Lorenz Kienle,
Hermann Kohlstedt,
Simon Fichtner
Abstract:
Analog switching in ferroelectric devices promises neuromorphic computing with highest energy efficiency, if limited device scalability can be overcome. To contribute to a solution, we report on the ferroelectric switching characteristics of sub-5 nm thin Al$_{0.74}$Sc$_{0.26}$N films grown on Pt/Ti/SiO2/Si and epitaxial Pt/GaN/sapphire templates by sputter-deposition. In this context, we focus on…
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Analog switching in ferroelectric devices promises neuromorphic computing with highest energy efficiency, if limited device scalability can be overcome. To contribute to a solution, we report on the ferroelectric switching characteristics of sub-5 nm thin Al$_{0.74}$Sc$_{0.26}$N films grown on Pt/Ti/SiO2/Si and epitaxial Pt/GaN/sapphire templates by sputter-deposition. In this context, we focus on the following major achievements compared to previously available wurtzite-type ferroelectrics: 1) Record low switching voltages down to 1 V are achieved, which is in a range that can be supplied by standard on-chip voltage sources. 2) Compared to the previously investigated deposition of thinnest Al$_{1-x}$Sc$_x$N films on epitaxial templates, a significantly larger coercive field to breakdown field ratio is observed for Al$_{0.74}$Sc$_{0.26}$N films grown on silicon substrates, the technologically most relevant substrate-type. 3) The formation of true ferroelectric domains in wurtzite-type materials is for the first time demonstrated on the atomic scale by scanning transmission electron microscopy investigations of a sub-5 nm thin partially switched film. The direct observation of inversion domain boundaries within single nm-sized grains supports the theory of a gradual domain-wall motion limited switching process in wurtzite-type ferroelectrics. Ultimately, this should enable the analog switching necessary for mimicking neuromorphic concepts also in highly scaled devices.
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Submitted 6 April, 2023;
originally announced April 2023.
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Ultrathin AlScN for low-voltage driven ferroelectric-based devices
Authors:
Georg Schönweger,
Md Redwanul Islam,
Niklas Wolff,
Adrian Petraru,
Lorenz Kienle,
Hermann Kohlstedt,
Simon Fichtner
Abstract:
Thickness scaling of ferroelectricity in AlScN is a determining factor for its potential application in neuromorphic computing and memory devices. In this letter, we report on ultrathin (10 nm) Al0.72Sc0.28N films that are ferroelectrically switchable at room temperature. All-epitaxial Al0.72Sc0.28N/Pt heterostructures are grown by magnetron sputtering onto GaN/sapphire substrates followed by an i…
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Thickness scaling of ferroelectricity in AlScN is a determining factor for its potential application in neuromorphic computing and memory devices. In this letter, we report on ultrathin (10 nm) Al0.72Sc0.28N films that are ferroelectrically switchable at room temperature. All-epitaxial Al0.72Sc0.28N/Pt heterostructures are grown by magnetron sputtering onto GaN/sapphire substrates followed by an in situ Pt cap** approach to avoid oxidation of the Al0.72Sc0.28N film surface. Structural characterization by X-ray diffraction and transmission electron microscopy reveals the established epitaxy. The thus obtained high-quality interfaces in combination with the in situ cap** is expected to facilitate ferroelectric switching of AlScN in the ultrathin regime. The analysis of the relative permittivity and coercive field dependence on the Al0.72Sc0.28N film thicknesses in the range of 100 nm down to 10 nm indicates only moderate scaling effects, suggesting that the critical thickness for ferroelectricity is not yet approached. Furthermore, the deposited layer stack demonstrates the possibility of including ultrathin ferroelectric AlScN into all-epitaxial GaN-based devices using sputter deposition techniques. Thus, our work highlights the integration and scaling potential of all-epitaxial ultrathin AlScN offering high storage density paired with low voltage operation desired for state of the art ferroelectric memory devices.
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Submitted 5 July, 2022;
originally announced July 2022.
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Ferroelectricity in AlScN: Switching, Imprint and sub-150 nm Films
Authors:
Simon Fichtner,
Georg Schönweger,
Tom-Niklas Kreutzer,
Fabian Lofink,
Adrian Petraru,
Hermann Kohlstedt,
Bernhard Wagner
Abstract:
The discovery of ferroelectricity in AlScN allowed the first clear observation of the effect in the wurtzite crystal structure, resulting in a material with a previously unprecedented combination of very large coercive fields (2-5 MV/cm) and remnant polarizations (70-110 $μ$C/cm$^2$). We obtained initial insight into the switching dynamics of AlScN, which suggests a domain wall motion limited proc…
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The discovery of ferroelectricity in AlScN allowed the first clear observation of the effect in the wurtzite crystal structure, resulting in a material with a previously unprecedented combination of very large coercive fields (2-5 MV/cm) and remnant polarizations (70-110 $μ$C/cm$^2$). We obtained initial insight into the switching dynamics of AlScN, which suggests a domain wall motion limited process progressing from the electrode interfaces. Further, imprint was generally observed in AlScN films and can tentatively be traced to the alignment of charged defects with the internal and external polarization and field, respectively. Potentially crucial from the application point of view, ferroelectricity could be observed in films with thicknesses below 30 nm - as the coercive fields of AlScN were found to be largely independent of thickness between 600 nm and 27 nm.
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Submitted 12 October, 2020;
originally announced October 2020.
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Full field electron spectromicroscopy applied to ferroelectric materials
Authors:
N. Barrett,
J. E. Rault,
J. L. Wang,
C. Mathieu,
A. Locatelli,
T. O. Mentes,
M. A. Nino,
S. Fusil,
M. Bibes,
A. Barthelemy,
D. Sando,
W. Ren,
S. Prosandeev,
L. Bellaiche,
B. Vilquin,
A. Petraru,
I. P. Krug,
C. M. Schneider
Abstract:
The application of PhotoEmission Electron Microscopy (PEEM) and Low Energy Electron Microscopy (LEEM) techniques to the study of the electronic and chemical structure of ferroelectric materials is reviewed. Electron optics in both techniques gives spatial resolution of a few tens of nanometres. PEEM images photoelectrons whereas LEEM images reflected and elastically backscattered electrons. Both P…
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The application of PhotoEmission Electron Microscopy (PEEM) and Low Energy Electron Microscopy (LEEM) techniques to the study of the electronic and chemical structure of ferroelectric materials is reviewed. Electron optics in both techniques gives spatial resolution of a few tens of nanometres. PEEM images photoelectrons whereas LEEM images reflected and elastically backscattered electrons. Both PEEM and LEEM can be used in direct and reciprocal space imaging. Together, they provide access to surface charge, work function, topography, chemical map**, surface crystallinity and band structure. Examples of applications for the study of ferroelectric thin films and single crystals are presented.
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Submitted 13 June, 2018;
originally announced June 2018.
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Polarization dependent interface properties of ferroelectric Schottky barriers studied by soft X-ray absorption spectroscopy
Authors:
H. Kohlstedt,
A. Petraru,
M. Meier J. Denlinger,
J. Guo,
Y. Wanli,
A. Scholl,
B. Freelon,
T. Schneller,
R. Waser,
P. Yu,
R. Ramesh,
T. Learmonth,
P. -A. Glans,
K. E. Smith
Abstract:
We applied soft X-ray absorption spectroscopy to study the Ti L-edge in ferroelectric capacitors using a modified total electron yield method. The inner photo currents and the X-ray absorption spectra were polarization state dependent. The results are explained on the basis of photo electric effects and the inner potential in the ferroelectric capacitors as a result of back-to-back Schottky barr…
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We applied soft X-ray absorption spectroscopy to study the Ti L-edge in ferroelectric capacitors using a modified total electron yield method. The inner photo currents and the X-ray absorption spectra were polarization state dependent. The results are explained on the basis of photo electric effects and the inner potential in the ferroelectric capacitors as a result of back-to-back Schottky barriers superimposed by the potential due to the depolarization field. In general, the presented method offers the opportunity to investigate the electronic structure of buried metal-insulator and metal-semiconductor interfaces in thin film devices. Corresponding author: [email protected]
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Submitted 23 October, 2008;
originally announced October 2008.
