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Imaging the Electric Field with X-Ray Diffraction Microscopy
Authors:
Trygve Magnus Ræder,
Urko Petralanda,
Thomas Olsen,
Hugh Simons
Abstract:
The properties of semiconductors and functional dielectrics are defined by their response in electric fields, which may be perturbed by defects and the strain they generate. In this work, we demonstrate how diffraction-based X-ray microscopy techniques may be utilized to image the electric field in insulating crystalline materials. By analysing a prototypical ferro- and piezoelectric material, BaT…
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The properties of semiconductors and functional dielectrics are defined by their response in electric fields, which may be perturbed by defects and the strain they generate. In this work, we demonstrate how diffraction-based X-ray microscopy techniques may be utilized to image the electric field in insulating crystalline materials. By analysing a prototypical ferro- and piezoelectric material, BaTiO$_{3}$, we identify trends that can guide experimental design towards imaging the electric field using any diffraction-based X-ray microscopy technique. We explain these trends in the context of dark-field X-ray microscopy, but the framework is also valid for Bragg scanning probe X-ray microscopy, Bragg coherent diffraction imaging and Bragg X-ray ptychography. The ability to quantify electric field distributions alongside the defects and strain already accessible via these techniques offers a more comprehensive picture of the often complex structure-property relationships that exist in many insulating and semiconducting materials.
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Submitted 31 August, 2023;
originally announced August 2023.
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Two-dimensional ferroelectrics from high throughput computational screening
Authors:
Mads Kruse,
Urko Petralanda,
Morten N. Gjerding,
Karsten W. Jacobsen,
Kristian S. Thygesen,
Thomas Olsen
Abstract:
We report a high throughput computational search for two-dimensional ferroelectric materials. The starting point is 252 pyroelectric materials from the computational 2D materials database (C2DB) and from these we identify 64 ferroelectric materials by explicitly constructing adiabatic paths connecting states of reversed polarization. In particular we find 49 materials with in-plane polarization, 8…
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We report a high throughput computational search for two-dimensional ferroelectric materials. The starting point is 252 pyroelectric materials from the computational 2D materials database (C2DB) and from these we identify 64 ferroelectric materials by explicitly constructing adiabatic paths connecting states of reversed polarization. In particular we find 49 materials with in-plane polarization, 8 materials with out-of-plane polarization and 6 materials with coupled in-plane and out-of-plane polarization. Most of the known 2D ferroelectrics are recovered by the screening and the far majority of the new predicted ferroelectrics are known as bulk van der Waals bonded compounds, which implies that these could be experimentally accessible by direct exfoliation. For roughly 25{\%} of the materials we find a metastable state in the non-polar structure, which could have important consequences for the thermodynamical properties and may imply a first order transition to the polar phase. Finally, we list the magnetic pyroelectrics extracted from the C2DB and focus on the case of VAgP$_2$Se$_6$, which exhibits a three-state switchable polarization vector that is strongly coupled to the magnetic excitation spectrum.
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Submitted 28 September, 2022;
originally announced September 2022.
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Polarization switching induced by domain wall sliding in two-dimensional ferroelectric monochalcogenides
Authors:
Urko Petralanda,
Thomas Olsen
Abstract:
The ability to switch between distinct states of polarization comprises the defining property of ferroelectrics. However, the microscopic mechanism responsible for switching is not well understood and theoretical estimates based on coherent monodomain switching typically overestimate experimentally determined coercive fields by orders of magnitude. In this work we present a detailed first principl…
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The ability to switch between distinct states of polarization comprises the defining property of ferroelectrics. However, the microscopic mechanism responsible for switching is not well understood and theoretical estimates based on coherent monodomain switching typically overestimate experimentally determined coercive fields by orders of magnitude. In this work we present a detailed first principles characterization of domain walls (DWs) in two-dimensional ferroelectric GeS, GeSe, SnS and SnSe. In particular, we calculate the formation energies and migration barriers for 180 and 90 DWs, and then derive a general expression for the coercive field assuming that polarization switching is mediated by DW migration. We apply our approach to the materials studied and obtain good agreement with experimental coercive fields. The calculated coercive fields are up to two orders of magnitude smaller than those predicted from coherent monodomain switching in GeSe, SnS and SnSe. Finally, we study the optical properties of the compounds and find that the presence of 180 DWs leads to a significant red shift of the absorption spectrum, implying that the density of DWs may be determined by means of simple optical probes.
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Submitted 7 November, 2022; v1 submitted 26 April, 2022;
originally announced April 2022.
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Abundance of second order topology in $C_3$ symmetric two-dimensional insulators
Authors:
Joachim Sødequist,
Urko Petralanda,
Thomas Olsen
Abstract:
We have screened 71 two-dimensional (2D) materials with $C_3$ symmetry for non-trivial second order topological order and find that 28 compounds exhibit an obstructed atomic limit (OAL). In the case of $C_3$ symmetry, the second order topology can be calculated from bulk symmetry indicator invariants, which predict the value of fractional corner charges in symmetry conserving nanoflakes. The proce…
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We have screened 71 two-dimensional (2D) materials with $C_3$ symmetry for non-trivial second order topological order and find that 28 compounds exhibit an obstructed atomic limit (OAL). In the case of $C_3$ symmetry, the second order topology can be calculated from bulk symmetry indicator invariants, which predict the value of fractional corner charges in symmetry conserving nanoflakes. The procedure is exemplified by MoS$_2$ in the H-phase, which constitutes a generic example of a 2D OAL material and the predicted fractional corner charges is verified by direct calculations of nanoflakes with armchair edges. We also determine the bulk topological polarization, which always lead to gapless states at zigzag edges and thus deteriorates the concept of fractional corner charges in nanoflakes with zigzag edges that are typically more stable that armchair flakes. We then consider the case of TiCl$_2$, which has vanishing polarization as well as an OAL and we verify that the edge states of nanoflakes with zigzag edges may indeed by passivated such that the edges remain insulating and the corner charges are well defined. For the 28 OAL materials we find that 16 have vanishing polarization and these materials thus constitute a promising starting point for experimental verification of second order topology in a 2D material.
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Submitted 16 November, 2022; v1 submitted 8 April, 2022;
originally announced April 2022.
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Oxygen vacancies nucleate charged domain walls in ferroelectrics
Authors:
Urko Petralanda,
Mads Kruse,
Hugh Simons,
Thomas Olsen
Abstract:
We study the influence of oxygen vacancies on the formation of charged 180$^\circ$ domain walls in ferroelectric BaTiO$_3$ using first principles calculations. We show that it is favorable for vacancies to assemble in crystallographic planes, and that such clustering is accompanied by the formation of a charged domain wall. The domain wall has negative bound charge, which compensates the nominal p…
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We study the influence of oxygen vacancies on the formation of charged 180$^\circ$ domain walls in ferroelectric BaTiO$_3$ using first principles calculations. We show that it is favorable for vacancies to assemble in crystallographic planes, and that such clustering is accompanied by the formation of a charged domain wall. The domain wall has negative bound charge, which compensates the nominal positive charge of the vacancies and leads to a vanishing density of free charge at the wall. This is in contrast to the positively charged domain walls, which are nearly completely compensated by free charge from the bulk. The results thus explain the experimentally observed difference in electronic conductivity of the two types of domain walls, as well as the generic prevalence of charged domain walls in ferroelectrics. Moreover, the explicit demonstration of vacancy driven domain wall formation implies that specific charged domain wall configurations may be realized by bottom-up design for use in domain wall based information processing.
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Submitted 21 December, 2020;
originally announced December 2020.
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Anisotropic properties of monolayer 2D materials: an overview from the C2DB database
Authors:
Luca Vannucci,
Urko Petralanda,
Asbjørn Rasmussen,
Thomas Olsen,
Kristian S. Thygesen
Abstract:
We analyze the occurrence of in-plane anisotropy in the electronic, magnetic, elastic and transport properties of more than one thousand 2D materials from the C2DB database. We identify hundreds of anisotropic materials and classify them according to their point group symmetry and degree of anisotropy. A statistical analysis reveals that a lower point group symmetry and a larger amount of differen…
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We analyze the occurrence of in-plane anisotropy in the electronic, magnetic, elastic and transport properties of more than one thousand 2D materials from the C2DB database. We identify hundreds of anisotropic materials and classify them according to their point group symmetry and degree of anisotropy. A statistical analysis reveals that a lower point group symmetry and a larger amount of different elements in the structure favour all types of anisotropies, which could be relevant for future materials design approaches. Besides, we identify novel compounds, predicted to be easily exfoliable from a parent bulk compound, with anisotropies that largely outscore those of already known 2D materials. Our findings provide a comprehensive reference for future studies of anisotropic response in atomically-thin crystals and point to new previously unexplored materials for the next generation of anisotropic 2D devices.
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Submitted 19 August, 2020; v1 submitted 8 July, 2020;
originally announced July 2020.
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Temperature Driven Transformation of CsPbBr$_3$ Nanoplatelets into Mosaic Nanotiles in Solution through Self-Assembly
Authors:
Zhiya Dang,
Balaji Dhanabalan,
Andrea Castelli,
Rohan Dhall,
Karen C. Bustillo,
Dorwal Marchelli,
Davide Spirito,
Urko Petralanda,
Javad Shamsi,
Liberato Manna,
Roman Krahne,
Milena P. Arciniegas
Abstract:
Two-dimensional colloidal halide perovskite nanocrystals are promising materials for light emitting applications. In addition, they can be used as components to create a variety of materials through physical and chemical transformations. Recent studies focused on nanoplatelets that are able to self-assemble and transform on solid substrates. Yet, the mechanism behind the process and the atomic arr…
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Two-dimensional colloidal halide perovskite nanocrystals are promising materials for light emitting applications. In addition, they can be used as components to create a variety of materials through physical and chemical transformations. Recent studies focused on nanoplatelets that are able to self-assemble and transform on solid substrates. Yet, the mechanism behind the process and the atomic arrangement of their assemblies remain unclear. Here, we present the transformation of self-assembled stacks of CsPbBr$_3$ nanoplatelets in solution, capturing the different stages of the process by kee** the solutions at room temperature and monitoring the nanocrystal morphology over a period of a few months. Using ex-situ transmission electron microscopy and surface analysis, we demonstrate that the transformation mechanism can be understood as oriented attachment, proceeding through the following steps: i) desorption of the ligands from the particles surfaces, causing the merging of nanoplatelet stacks, which first form nanobelts; ii) merging of neighboring nanobelts that form more extended nanoplates; and iii) attachment of nanobelts and nanoplates, which create objects with an atomic structure that resemble a mosaic made of broken nanotiles. We reveal that the starting nanoplatelets merge seamlessly and defect-free on an atomic scale in small and thin nanobelts. However, aged nanobelts and nanoplates, which are mainly stabilized by amine/ammonium ions, link through a bilayer of CsBr. In this case, the atomic columns of neighboring perovskite lattices shift by a half-unit-cell, forming Ruddlesden-Popper planar faults.
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Submitted 4 May, 2020;
originally announced May 2020.
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Low-energy Structural Dynamics of Ferroelectric Domain Walls in Hexagonal Rare-earth Manganites
Authors:
Xiaoyu Wu,
Urko Petralanda,
Lu Zheng,
Yuan Ren,
Rongwei Hu,
Sang-Wook Cheong,
Sergey Artyukhin,
Keji Lai
Abstract:
Domain walls (DWs) in ferroic materials, across which the order parameter abruptly changes its orientation, can host emergent properties that are absent in the bulk domains. Using a broadband ($10^6-10^{10}$ Hz) scanning impedance microscope, we show that the electrical response of the interlocked antiphase boundaries and ferroelectric domain walls in hexagonal rare-earth manganites ($h-RMnO_3$) i…
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Domain walls (DWs) in ferroic materials, across which the order parameter abruptly changes its orientation, can host emergent properties that are absent in the bulk domains. Using a broadband ($10^6-10^{10}$ Hz) scanning impedance microscope, we show that the electrical response of the interlocked antiphase boundaries and ferroelectric domain walls in hexagonal rare-earth manganites ($h-RMnO_3$) is dominated by the bound-charge oscillation rather than free-carrier conduction at the DWs. As a measure of the rate of energy dissipation, the effective conductivity of DWs on the (001) surfaces of $h-RMnO_3$ at GHz frequencies is drastically higher than that at dc, while the effect is absent on surfaces with in-plane polarized domains. First-principles and model calculations indicate that the frequency range and selection rules are consistent with the periodic sliding of the DW around its equilibrium position. This acoustic-wave-like mode, which is associated with the synchronized oscillation of local polarization and apical oxygen atoms, is localized perpendicular to the DW but free to propagate along the DW plane. Our results break the ground to understand structural DW dynamics and exploit new interfacial phenomena for novel devices.
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Submitted 20 February, 2017;
originally announced February 2017.
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First principles investigation of the strain-mode coupling in srbi2nb2o9
Authors:
Urko Petralanda,
I. Etxebarria
Abstract:
The Aurivillius compounds SrBi2Nb2O9 (SBN) and SrBi2Ta2O9 (SBT) present at room temperature isomorphous ferroelectric structures that are stabilized by a complex interplay of three order parameters via a trilinear coupling. In this work we examine the influence of the in-plane misfit strain in the strength of the relevant instabilities and the couplings between them. A mixed strain-stress enthalpy…
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The Aurivillius compounds SrBi2Nb2O9 (SBN) and SrBi2Ta2O9 (SBT) present at room temperature isomorphous ferroelectric structures that are stabilized by a complex interplay of three order parameters via a trilinear coupling. In this work we examine the influence of the in-plane misfit strain in the strength of the relevant instabilities and the couplings between them. A mixed strain-stress enthalpy compatible with the symmetry of SBN is developed with all the parameters obtained from first principles. We find that the dominant role of the order parameters varies as a function of the strain and, as a consequence, that the value of the polarization can be tuned by choosing the lattice parameter of the substrate. It is also shown that the sequence of phase transitions and the main features of the phase diagram change qualitatively in terms of the strain.
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Submitted 14 October, 2015;
originally announced October 2015.
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Structural instabilities and sequence of phase transitions in SrBi$_2$Ta$_2$O$_9$ and SrBi$_2$Nb$_2$O$_9$ from first principles and Monte Carlo simulations
Authors:
Urko Petralanda,
I. Etxebarria
Abstract:
Despite their structural similarities, SrBi$_2$Ta$_2$O$_9$ (SBT) and SrBi$_2$Nb$_2$O$_9$ (SBN) undergo a different sequence of phase transitions. The phase diagram of SBT as a function of the temperature includes an intermediate phase between the high-temperature phase and the ferroelectric ground state, while in the Niobium compound the intermediate phase is suppressed and a single transition bet…
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Despite their structural similarities, SrBi$_2$Ta$_2$O$_9$ (SBT) and SrBi$_2$Nb$_2$O$_9$ (SBN) undergo a different sequence of phase transitions. The phase diagram of SBT as a function of the temperature includes an intermediate phase between the high-temperature phase and the ferroelectric ground state, while in the Niobium compound the intermediate phase is suppressed and a single transition between the high- and low temperature structures is observed. We present \emph{ab initio} calculations that reveal the relevance of a trilinear coupling between three symmetry-adapted modes to stabilize the ground sate in both compounds, being this coupling much stronger in SBN. Within the framework of the phenomenological Landau theory, it is shown that by solely increasing the strength of the trilinear coupling the topology of the phase diagram of SBT can change up to suppress the intermediate phase. Monte Carlo simulations on an idealized $φ^4$ Hamiltonian confirm that the trilinear coupling is the key parameter that determines the sequence of phase transitions and that for higher dimensionality of the order parameters the stability region of the intermediate phase is narrower.
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Submitted 4 March, 2015;
originally announced March 2015.
