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Gate-Tunable Transmon Using Selective-Area-Grown Superconductor-Semiconductor Hybrid Structures on Silicon
Authors:
A. Hertel,
M. Eichinger,
L. O. Andersen,
D. M. T. van Zanten,
S. Kallatt,
P. Scarlino,
A. Kringhøj,
J. M. Chavez-Garcia,
G. C. Gardner,
S. Gronin,
M. J. Manfra,
A. Gyenis,
M. Kjaergaard,
C. M. Marcus,
K. D. Petersson
Abstract:
We present a gate-voltage tunable transmon qubit (gatemon) based on planar InAs nanowires that are selectively grown on a high resistivity silicon substrate using III-V buffer layers. We show that low loss superconducting resonators with an internal quality of $2\times 10^5$ can readily be realized using these substrates after the removal of buffer layers. We demonstrate coherent control and reado…
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We present a gate-voltage tunable transmon qubit (gatemon) based on planar InAs nanowires that are selectively grown on a high resistivity silicon substrate using III-V buffer layers. We show that low loss superconducting resonators with an internal quality of $2\times 10^5$ can readily be realized using these substrates after the removal of buffer layers. We demonstrate coherent control and readout of a gatemon device with a relaxation time, $T_{1}\approx 700\,\mathrm{ns}$, and dephasing times, $T_2^{\ast}\approx 20\,\mathrm{ns}$ and $T_{\mathrm{2,echo}} \approx 1.3\,\mathrm{μs}$. Further, we infer a high junction transparency of $0.4 - 0.9$ from an analysis of the qubit anharmonicity.
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Submitted 22 February, 2022;
originally announced February 2022.
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Parity switching in a full-shell superconductor-semiconductor nanowire qubit
Authors:
O. Erlandsson,
D. Sabonis,
A. Kringhøj,
T. W. Larsen,
P. Krogstrup,
K. D. Petersson,
C. M. Marcus
Abstract:
The rate of charge-parity switching in a full-shell superconductor-semiconductor nanowire qubit is measured by directly monitoring the dispersive shift of a readout resonator. At zero magnetic field, the measured switching time scale $T_P$ is on the order of 100 ms. Two-tone spectroscopy data post-selected on charge-parity is demonstrated. With increasing temperature or magnetic field, TP is at fi…
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The rate of charge-parity switching in a full-shell superconductor-semiconductor nanowire qubit is measured by directly monitoring the dispersive shift of a readout resonator. At zero magnetic field, the measured switching time scale $T_P$ is on the order of 100 ms. Two-tone spectroscopy data post-selected on charge-parity is demonstrated. With increasing temperature or magnetic field, TP is at first constant, then exponentially suppressed, consistent with a model that includes both non-equilibrium and thermally activated quasiparticles. As TP is suppressed, qubit lifetime T1 also decreases. The long $T_P\sim 0.1$ s at zero field is promising for future development of qubits based on hybrid nanowires.
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Submitted 11 February, 2022;
originally announced February 2022.
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Electrical Properties of Selective-Area-Grown Superconductor-Semiconductor Hybrid Structures on Silicon
Authors:
A. Hertel,
L. O. Andersen,
D. M. T. van Zanten,
M. Eichinger,
P. Scarlino,
S. Yadav,
J. Karthik,
S. Gronin,
G. C. Gardner,
M. J. Manfra,
C. M. Marcus,
K. D. Petersson
Abstract:
We present a superconductor-semiconductor material system that is both scalable and monolithically integrated on a silicon substrate. It uses selective area growth of Al-InAs hybrid structures on a planar III-V buffer layer, grown directly on a high resistivity silicon substrate. We characterized the electrical properties of this material system at millikelvin temperatures and observed a high aver…
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We present a superconductor-semiconductor material system that is both scalable and monolithically integrated on a silicon substrate. It uses selective area growth of Al-InAs hybrid structures on a planar III-V buffer layer, grown directly on a high resistivity silicon substrate. We characterized the electrical properties of this material system at millikelvin temperatures and observed a high average field-effect mobility of $μ\approx 3200\,\mathrm{cm^2/Vs}$ for the InAs channel, and a hard induced superconducting gap. Josephson junctions exhibited a high interface transmission, $\mathcal{T} \approx 0.75 $, gate voltage tunable switching current with a product of critical current and normal state resistance, $I_{\mathrm{C}}R_{\mathrm{N}} \approx 83\,\mathrm{μV}$, and signatures of multiple Andreev reflections. These results pave the way for scalable and high coherent gate voltage tunable transmon devices and other superconductor-semiconductor hybrids fabricated directly on silicon.
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Submitted 8 April, 2021;
originally announced April 2021.
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Microwave Sensing of Andreev Bound States in a Gate-Defined Superconducting Quantum Point Contact
Authors:
Vivek Chidambaram,
Anders Kringhøj,
Lucas Casparis,
Ferdinand Kuemmeth,
Tiantian Wang,
Candice Thomas,
Sergei Gronin,
Geoffrey C. Gardner,
Zhengyi Cui,
Chenlu Liu,
Kristof Moors,
Michael J. Manfra,
Karl D. Petersson,
Malcolm R. Connolly
Abstract:
We use a superconducting microresonator as a cavity to sense absorption of microwaves by a superconducting quantum point contact defined by surface gates over a proximitized two-dimensional electron gas. Renormalization of the cavity frequency with phase difference across the point contact is consistent with adiabatic coupling to Andreev bound states. Near $π$ phase difference, we observe random f…
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We use a superconducting microresonator as a cavity to sense absorption of microwaves by a superconducting quantum point contact defined by surface gates over a proximitized two-dimensional electron gas. Renormalization of the cavity frequency with phase difference across the point contact is consistent with adiabatic coupling to Andreev bound states. Near $π$ phase difference, we observe random fluctuations in absorption with gate voltage, related to quantum interference-induced modulations in the electron transmission. We identify features consistent with the presence of single Andreev bound states and describe the Andreev-cavity interaction using a dispersive Jaynes-Cummings model. By fitting the weak Andreev-cavity coupling, we extract ~GHz decoherence consistent with charge noise and the transmission dispersion associated with a localized state.
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Submitted 1 September, 2022; v1 submitted 9 February, 2021;
originally announced February 2021.
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Magnetic-Field-Compatible Superconducting Transmon Qubit
Authors:
A. Kringhøj,
T. W. Larsen,
O. Erlandsson,
W. Uilhoorn,
J. G. Kroll,
M. Hesselberg,
R. P. G. McNeil,
P. Krogstrup,
L. Casparis,
C. M. Marcus,
K. D. Petersson
Abstract:
We present a hybrid semiconductor-based superconducting qubit device which remains coherent at magnetic fields up to 1 T. The qubit transition frequency exhibits periodic oscillations with magnetic field, consistent with interference effects due to the magnetic flux threading the cross section of the proximitized semiconductor nanowire junction. As induced superconductivity revives, additional coh…
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We present a hybrid semiconductor-based superconducting qubit device which remains coherent at magnetic fields up to 1 T. The qubit transition frequency exhibits periodic oscillations with magnetic field, consistent with interference effects due to the magnetic flux threading the cross section of the proximitized semiconductor nanowire junction. As induced superconductivity revives, additional coherent modes emerge at high magnetic fields, which we attribute to the interaction of the qubit and low-energy Andreev states.
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Submitted 13 January, 2021;
originally announced January 2021.
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Andreev Modes from Phase Winding in a Full-shell Nanowire-based Transmon
Authors:
A. Kringhøj,
G. W. Winkler,
T. W. Larsen,
D. Sabonis,
O. Erlandsson,
P. Krogstrup,
B. van Heck,
K. D. Petersson,
C. M. Marcus
Abstract:
We investigate transmon qubits made from semiconductor nanowires with a fully surrounding superconducting shell. In the regime of reentrant superconductivity associated with the destructive Little-Parks effect, numerous coherent transitions are observed in the first reentrant lobe, where the shell carries 2π winding of superconducting phase, and are absent in the zeroth lobe. As junction density w…
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We investigate transmon qubits made from semiconductor nanowires with a fully surrounding superconducting shell. In the regime of reentrant superconductivity associated with the destructive Little-Parks effect, numerous coherent transitions are observed in the first reentrant lobe, where the shell carries 2π winding of superconducting phase, and are absent in the zeroth lobe. As junction density was increased by gate voltage, qubit coherence was suppressed then lost in the first lobe. These observations and numerical simulations highlight the role of winding-induced Andreev states in the junction.
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Submitted 23 August, 2020;
originally announced August 2020.
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Integration of topological insulator Josephson junctions in superconducting qubit circuits
Authors:
Tobias W. Schmitt,
Malcolm R. Connolly,
Michael Schleenvoigt,
Chenlu Liu,
Oscar Kennedy,
José M. Chávez-Garcia,
Abdur R. Jalil,
Benjamin Bennemann,
Stefan Trellenkamp,
Florian Lentz,
Elmar Neumann,
Tobias Lindström,
Sebastian E. de Graaf,
Erwin Berenschot,
Niels Tas,
Gregor Mussler,
Karl D. Petersson,
Detlev Grützmacher,
Peter Schüffelgen
Abstract:
The integration of semiconductor Josephson junctions (JJs) in superconducting quantum circuits provides a versatile platform for hybrid qubits and offers a powerful way to probe exotic quasiparticle excitations. Recent proposals for using circuit quantum electrodynamics (cQED) to detect topological superconductivity motivate the integration of novel topological materials in such circuits. Here, we…
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The integration of semiconductor Josephson junctions (JJs) in superconducting quantum circuits provides a versatile platform for hybrid qubits and offers a powerful way to probe exotic quasiparticle excitations. Recent proposals for using circuit quantum electrodynamics (cQED) to detect topological superconductivity motivate the integration of novel topological materials in such circuits. Here, we report on the realization of superconducting transmon qubits implemented with $(Bi_{0.06}Sb_{0.94})_{2}Te_{3}$ topological insulator (TI) JJs using ultra-high vacuum fabrication techniques. Microwave losses on our substrates with monolithically integrated hardmask, used for selective area growth of TI nanostructures, imply microsecond limits to relaxation times and thus their compatibility with strong-coupling cQED. We use the cavity-qubit interaction to show that the Josephson energy of TI-based transmons scales with their JJ dimensions and demonstrate qubit control as well as temporal quantum coherence. Our results pave the way for advanced investigations of topological materials in both novel Josephson and topological qubits.
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Submitted 18 September, 2021; v1 submitted 8 July, 2020;
originally announced July 2020.
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Destructive Little-Parks Effect in a Full-Shell Nanowire-based Transmon
Authors:
Deividas Sabonis,
Oscar Erlandsson,
Anders Kringhøj,
Bernard van Heck,
Thorvald W. Larsen,
Ivana Petkovic,
Peter Krogstrup,
Karl D. Petersson,
Charles M. Marcus
Abstract:
A semiconductor transmon with an epitaxial Al shell fully surrounding an InAs nanowire core is investigated in the low $E_J/E_C$ regime. Little-Parks oscillations as a function of flux along the hybrid wire axis are destructive, creating lobes of reentrant superconductivity separated by a metallic state at a half-quantum of applied flux. In the first lobe, phase winding around the shell can induce…
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A semiconductor transmon with an epitaxial Al shell fully surrounding an InAs nanowire core is investigated in the low $E_J/E_C$ regime. Little-Parks oscillations as a function of flux along the hybrid wire axis are destructive, creating lobes of reentrant superconductivity separated by a metallic state at a half-quantum of applied flux. In the first lobe, phase winding around the shell can induce topological superconductivity in the core. Coherent qubit operation is observed in both the zeroth and first lobes. Splitting of parity bands by coherent single-electron coupling across the junction is not resolved beyond line broadening, placing a bound on Majorana coupling, $E_M/h$ < 10 MHz, much smaller than the Josephson coupling $E_J/h$ ~ 4.7 GHz.
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Submitted 4 May, 2020;
originally announced May 2020.
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A Parity-Protected Superconductor-Semiconductor Qubit
Authors:
T. W. Larsen,
M. E. Gershenson,
L. Casparis,
A. Kringhøj,
N. J. Pearson,
R. P. G. McNeil,
F. Kuemmeth,
P. Krogstrup,
K. D. Petersson,
C. M. Marcus
Abstract:
Coherence of superconducting qubits can be improved by implementing designs that protect the parity of Cooper pairs on superconducting islands. Here, we introduce a parity-protected qubit based on voltage-controlled semiconductor nanowire Josephson junctions, taking advantage of the higher harmonic content in the energy-phase relation of few-channel junctions. A symmetric interferometer formed by…
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Coherence of superconducting qubits can be improved by implementing designs that protect the parity of Cooper pairs on superconducting islands. Here, we introduce a parity-protected qubit based on voltage-controlled semiconductor nanowire Josephson junctions, taking advantage of the higher harmonic content in the energy-phase relation of few-channel junctions. A symmetric interferometer formed by two such junctions, gate-tuned into balance and frustrated by a half-quantum of applied flux, yields a cos(2φ) Josephson element, reflecting coherent transport of pairs of Cooper pairs. We demonstrate that relaxation of the qubit can be suppressed tenfold by tuning into the protected regime.
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Submitted 31 July, 2020; v1 submitted 8 April, 2020;
originally announced April 2020.
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Suppressed Charge Dispersion via Resonant Tunneling in a Single-Channel Transmon
Authors:
A. Kringhøj,
B. van Heck,
T. W. Larsen,
O. Erlandsson,
D. Sabonis,
P. Krogstrup,
L. Casparis,
K. D. Petersson,
C. M. Marcus
Abstract:
We demonstrate strong suppression of charge dispersion in a semiconductor-based transmon qubit across Josephson resonances associated with a quantum dot in the junction. On resonance, dispersion is drastically reduced compared to conventional transmons with corresponding Josephson and charging energies. We develop a model of qubit dispersion for a single-channel resonance, which is in quantitative…
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We demonstrate strong suppression of charge dispersion in a semiconductor-based transmon qubit across Josephson resonances associated with a quantum dot in the junction. On resonance, dispersion is drastically reduced compared to conventional transmons with corresponding Josephson and charging energies. We develop a model of qubit dispersion for a single-channel resonance, which is in quantitative agreement with experimental data.
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Submitted 26 November, 2019; v1 submitted 22 November, 2019;
originally announced November 2019.
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Controlled DC Monitoring of a Superconducting Qubit
Authors:
A. Kringhøj,
T. W. Larsen,
B. van Heck,
D. Sabonis,
O. Erlandsson,
I. Petkovic,
D. I. Pikulin,
P. Krogstrup,
K. D. Petersson,
C. M. Marcus
Abstract:
Creating a transmon qubit using semiconductor-superconductor hybrid materials not only provides electrostatic control of the qubit frequency, it also allows parts of the circuit to be electrically connected and disconnected in situ by operating a semiconductor region of the device as a field-effect transistor (FET). Here, we exploit this feature to compare in the same device characteristics of the…
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Creating a transmon qubit using semiconductor-superconductor hybrid materials not only provides electrostatic control of the qubit frequency, it also allows parts of the circuit to be electrically connected and disconnected in situ by operating a semiconductor region of the device as a field-effect transistor (FET). Here, we exploit this feature to compare in the same device characteristics of the qubit, such as frequency and relaxation time, with related transport properties such as critical supercurrent and normal-state resistance. Gradually opening the FET to the monitoring circuit allows the influence of weak-to-strong DC monitoring of a live qubit to be measured. A model of this influence yields excellent agreement with experiment, demonstrating a relaxation rate mediated by a gate-controlled environmental coupling.
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Submitted 21 October, 2019; v1 submitted 17 October, 2019;
originally announced October 2019.
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Photon Assisted Tunneling of Zero Modes in a Majorana Wire
Authors:
David M. T. van Zanten,
Deividas Sabonis,
Judith Suter,
Jukka I. Väyrynen,
Torsten Karzig,
Dmitry I. Pikulin,
Eoin C. T. O'Farrell,
Davydas Razmadze,
Karl D. Petersson,
Peter Krogstrup,
Charles M. Marcus
Abstract:
Hybrid nanowires with proximity-induced superconductivity in the topological regime host Majorana zero modes (MZMs) at their ends, and networks of such structures can produce topologically protected qubits. In a double-island geometry where each segment hosts a pair of MZMs, inter-pair coupling mixes the charge parity of the islands and opens an energy gap between the even and odd charge states at…
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Hybrid nanowires with proximity-induced superconductivity in the topological regime host Majorana zero modes (MZMs) at their ends, and networks of such structures can produce topologically protected qubits. In a double-island geometry where each segment hosts a pair of MZMs, inter-pair coupling mixes the charge parity of the islands and opens an energy gap between the even and odd charge states at the inter-island charge degeneracy. Here, we report on the spectroscopic measurement of such an energy gap in an InAs/Al double-island device by tracking the position of the microwave-induced quasiparticle (qp) transitions using a radio-frequency (rf) charge sensor. In zero magnetic field, photon assisted tunneling (PAT) of Cooper pairs gives rise to resonant lines in the 2e-2e periodic charge stability diagram. In the presence of a magnetic field aligned along the nanowire, resonance lines are observed parallel to the inter-island charge degeneracy of the 1e-1e periodic charge stability diagram, where the 1e periodicity results from a zero-energy sub-gap state that emerges in magnetic field. Resonant lines in the charge stability diagram indicate coherent photon assisted tunneling of single-electron states, changing the parity of the two islands. The dependence of resonant frequency on detuning indicates a sizable (GHz-scale) hybridization of zero modes across the junction separating islands.
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Submitted 2 February, 2019;
originally announced February 2019.
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Selective-area chemical beam epitaxy of in-plane InAs one-dimensional channels grown on InP(001), InP(111)B, and InP(110) surfaces
Authors:
Joon Sue Lee,
Sukgeun Choi,
Mihir Pendharkar,
Dan J. Pennachio,
Brian Markman,
Micheal Seas,
Sebastian Koelling,
Marcel A. Verheijen,
Lucas Casparis,
Karl D. Petersson,
Ivana Petkovic,
Vanessa Schaller,
Mark J. W. Rodwell,
Charles M. Marcus,
Peter Krogstrup,
Leo P. Kouwenhoven,
Erik P. A. M. Bakkers,
Chris J. Palmstrøm
Abstract:
We report on the selective-area chemical beam epitaxial growth of InAs in-plane, one-dimensional (1-D) channels using patterned SiO$_{2}$-coated InP(001), InP(111)B, and InP(110) substrates to establish a scalable platform for topological superconductor networks. Top-view scanning electron micrographs show excellent surface selectivity and dependence of major facet planes on the substrate orientat…
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We report on the selective-area chemical beam epitaxial growth of InAs in-plane, one-dimensional (1-D) channels using patterned SiO$_{2}$-coated InP(001), InP(111)B, and InP(110) substrates to establish a scalable platform for topological superconductor networks. Top-view scanning electron micrographs show excellent surface selectivity and dependence of major facet planes on the substrate orientations and ridge directions, and the ratios of the surface energies of the major facet planes were estimated. Detailed structural properties and defects in the InAs nanowires (NWs) were characterized by transmission electron microscopic analysis of cross-sections perpendicular to the NW ridge direction and along the NW ridge direction. Electrical transport properties of the InAs NWs were investigated using Hall bars, a field effect mobility device, a quantum dot, and an Aharonov-Bohm loop device, which reflect the strong spin-orbit interaction and phase-coherent transport characteristic in the selectively grown InAs systems. This study demonstrates that selective-area chemical beam epitaxy is a scalable approach to realize semiconductor 1-D channel networks with the excellent surface selectivity and this material system is suitable for quantum transport studies.
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Submitted 14 March, 2019; v1 submitted 14 August, 2018;
originally announced August 2018.
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Voltage-Controlled Superconducting Quantum Bus
Authors:
L. Casparis,
N. J. Pearson,
A. Kringhøj,
T. W. Larsen,
F. Kuemmeth,
J. Nygård,
P. Krogstrup,
K. D. Petersson,
C. M. Marcus
Abstract:
We demonstrate the ability of an epitaxial semiconductor-superconductor nanowire to serve as a field-effect switch to tune a superconducting cavity. Two superconducting gatemon qubits are coupled to the cavity, which acts as a quantum bus. Using a gate voltage to control the superconducting switch yields up to a factor of 8 change in qubit-qubit coupling between the on and off states without detri…
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We demonstrate the ability of an epitaxial semiconductor-superconductor nanowire to serve as a field-effect switch to tune a superconducting cavity. Two superconducting gatemon qubits are coupled to the cavity, which acts as a quantum bus. Using a gate voltage to control the superconducting switch yields up to a factor of 8 change in qubit-qubit coupling between the on and off states without detrimental effect on qubit coherence. High-bandwidth operation of the coupling switch on nanosecond timescales degrades qubit coherence.
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Submitted 5 February, 2018;
originally announced February 2018.
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Superconducting Gatemon Qubit based on a Proximitized Two-Dimensional Electron Gas
Authors:
Lucas Casparis,
Malcolm R. Connolly,
Morten Kjaergaard,
Natalie J. Pearson,
Anders Kringhøj,
Thorvald W. Larsen,
Ferdinand Kuemmeth,
Tiantian Wang,
Candice Thomas,
Sergei Gronin,
Geoffrey C. Gardner,
Michael J. Manfra,
Charles M. Marcus,
Karl D. Petersson
Abstract:
The coherent tunnelling of Cooper pairs across Josephson junctions (JJs) generates a nonlinear inductance that is used extensively in quantum information processors based on superconducting circuits, from setting qubit transition frequencies and interqubit coupling strengths, to the gain of parametric amplifiers for quantum-limited readout. The inductance is either set by tailoring the metal-oxide…
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The coherent tunnelling of Cooper pairs across Josephson junctions (JJs) generates a nonlinear inductance that is used extensively in quantum information processors based on superconducting circuits, from setting qubit transition frequencies and interqubit coupling strengths, to the gain of parametric amplifiers for quantum-limited readout. The inductance is either set by tailoring the metal-oxide dimensions of single JJs, or magnetically tuned by parallelizing multiple JJs in superconducting quantum interference devices (SQUIDs) with local current-biased flux lines. JJs based on superconductor-semiconductor hybrids represent a tantalizing all-electric alternative. The gatemon is a recently developed transmon variant which employs locally gated nanowire (NW) superconductor-semiconductor JJs for qubit control. Here, we go beyond proof-of-concept and demonstrate that semiconducting channels etched from a wafer-scale two-dimensional electron gas (2DEG) are a suitable platform for building a scalable gatemon-based quantum computer. We show 2DEG gatemons meet the requirements by performing voltage-controlled single qubit rotations and two-qubit swap operations. We measure qubit coherence times up to ~2 us, limited by dielectric loss in the 2DEG host substrate.
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Submitted 8 December, 2017; v1 submitted 21 November, 2017;
originally announced November 2017.
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Anharmonicity of a Gatemon Qubit with a Few-Mode Josephson Junction
Authors:
A. Kringhøj,
L. Casparis,
M. Hell,
T. W. Larsen,
F. Kuemmeth,
M. Leijnse,
K. Flensberg,
P. Krogstrup,
J. Nygård,
K. D. Petersson,
C. M. Marcus
Abstract:
Coherent operation of gate-voltage-controlled hybrid transmon qubits (gatemons) based on semiconductor nanowires was recently demonstrated. Here we experimentally investigate the anharmonicity in epitaxial InAs-Al Josephson junctions, a key parameter for their use as a qubit. Anharmonicity is found to be reduced by roughly a factor of two compared to conventional metallic junctions, and dependent…
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Coherent operation of gate-voltage-controlled hybrid transmon qubits (gatemons) based on semiconductor nanowires was recently demonstrated. Here we experimentally investigate the anharmonicity in epitaxial InAs-Al Josephson junctions, a key parameter for their use as a qubit. Anharmonicity is found to be reduced by roughly a factor of two compared to conventional metallic junctions, and dependent on gate voltage. Experimental results are consistent with a theoretical model, indicating that Josephson coupling is mediated by a small number of highly transmitting modes in the semiconductor junction.
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Submitted 16 March, 2017;
originally announced March 2017.
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Gatemon Benchmarking and Two-Qubit Operation
Authors:
L. Casparis,
T. W. Larsen,
M. S. Olsen,
F. Kuemmeth,
P. Krogstrup,
J. Nygård,
K. D. Petersson,
C. M. Marcus
Abstract:
Recent experiments have demonstrated superconducting transmon qubits with semiconductor nanowire Josephson junctions. These hybrid gatemon qubits utilize field effect tunability characteristic for semiconductors to allow complete qubit control using gate voltages, potentially a technological advantage over conventional flux-controlled transmons. Here, we present experiments with a two-qubit gatemo…
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Recent experiments have demonstrated superconducting transmon qubits with semiconductor nanowire Josephson junctions. These hybrid gatemon qubits utilize field effect tunability characteristic for semiconductors to allow complete qubit control using gate voltages, potentially a technological advantage over conventional flux-controlled transmons. Here, we present experiments with a two-qubit gatemon circuit. We characterize qubit coherence and stability and use randomized benchmarking to demonstrate single-qubit gate errors below 0.7% for all gates, including voltage-controlled $Z$ rotations. We show coherent capacitive coupling between two gatemons and coherent swap operations. Finally, we perform a two-qubit controlled-phase gate with an estimated fidelity of 91%, demonstrating the potential of gatemon qubits for building scalable quantum processors.
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Submitted 30 December, 2015;
originally announced December 2015.
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A Semiconductor Nanowire-Based Superconducting Qubit
Authors:
T. W. Larsen,
K. D. Petersson,
F. Kuemmeth,
T. S. Jespersen,
P. Krogstrup,
J. Nygard,
C. M. Marcus
Abstract:
We introduce a hybrid qubit based on a semiconductor nanowire with an epitaxially grown superconductor layer. Josephson energy of the transmon-like device ("gatemon") is controlled by an electrostatic gate that depletes carriers in a semiconducting weak link region. Strong coupling to an on-chip microwave cavity and coherent qubit control via gate voltage pulses is demonstrated, yielding reasonabl…
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We introduce a hybrid qubit based on a semiconductor nanowire with an epitaxially grown superconductor layer. Josephson energy of the transmon-like device ("gatemon") is controlled by an electrostatic gate that depletes carriers in a semiconducting weak link region. Strong coupling to an on-chip microwave cavity and coherent qubit control via gate voltage pulses is demonstrated, yielding reasonably long relaxation times (0.8 μs) and dephasing times (1 μs), exceeding gate operation times by two orders of magnitude, in these first-generation devices. Because qubit control relies on voltages rather than fluxes, dissipation in resistive control lines is reduced, screening reduces crosstalk, and the absence of flux control allows operation in a magnetic field, relevant for topological quantum information.
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Submitted 28 March, 2015;
originally announced March 2015.
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Photon Emission from a Cavity-Coupled Double Quantum Dot
Authors:
Y. -Y. Liu,
K. D. Petersson,
J. Stehlik,
J. M. Taylor,
J. R. Petta
Abstract:
We study a voltage biased InAs double quantum dot (DQD) that is coupled to a superconducting transmission line resonator. Inelastic tunneling in the DQD is mediated by electron phonon coupling and coupling to the cavity mode. We show that electronic transport through the DQD leads to photon emission from the cavity at a rate of 10 MHz. With a small cavity drive field, we observe a gain of up to 15…
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We study a voltage biased InAs double quantum dot (DQD) that is coupled to a superconducting transmission line resonator. Inelastic tunneling in the DQD is mediated by electron phonon coupling and coupling to the cavity mode. We show that electronic transport through the DQD leads to photon emission from the cavity at a rate of 10 MHz. With a small cavity drive field, we observe a gain of up to 15 in the cavity transmission. Our results are analyzed in the context of existing theoretical models and suggest that it may be necessary to account for inelastic tunneling processes that proceed via simultaneous emission of a phonon and a photon.
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Submitted 28 July, 2014; v1 submitted 29 January, 2014;
originally announced January 2014.
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Cavity-Mediated Entanglement Generation Via Landau-Zener Interferometry
Authors:
C. M. Quintana,
K. D. Petersson,
L. W. McFaul,
S. J. Srinivasan,
A. A. Houck,
J. R. Petta
Abstract:
We demonstrate quantum control and entanglement generation using a Landau-Zener beam splitter formed by coupling two transmon qubits to a superconducting cavity. Single passage through the cavity-mediated qubit-qubit avoided crossing provides a direct test of the Landau-Zener transition formula. Consecutive sweeps result in Landau-Zener-Stuckelberg interference patterns, with a visibility that can…
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We demonstrate quantum control and entanglement generation using a Landau-Zener beam splitter formed by coupling two transmon qubits to a superconducting cavity. Single passage through the cavity-mediated qubit-qubit avoided crossing provides a direct test of the Landau-Zener transition formula. Consecutive sweeps result in Landau-Zener-Stuckelberg interference patterns, with a visibility that can be sensitively tuned by adjusting the level velocity through both the non-adiabatic and adiabatic regimes. Two-qubit state tomography indicates that a Bell state can be generated via a single passage, with a fidelity of 78% limited by qubit relaxation.
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Submitted 4 December, 2012;
originally announced December 2012.
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A Radio Frequency Charge Parity Meter
Authors:
M. D. Schroer,
M. Jung,
K. D. Petersson,
J. R. Petta
Abstract:
We demonstrate a total charge parity measurement by detecting the radio frequency signal that is reflected by a lumped element resonator coupled to a single InAs nanowire double quantum dot. The high frequency response of the circuit is used to probe the effects of the Pauli exclusion principle at interdot charge transitions. Even parity charge transitions show a striking magnetic field dependence…
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We demonstrate a total charge parity measurement by detecting the radio frequency signal that is reflected by a lumped element resonator coupled to a single InAs nanowire double quantum dot. The high frequency response of the circuit is used to probe the effects of the Pauli exclusion principle at interdot charge transitions. Even parity charge transitions show a striking magnetic field dependence that is due to a singlet-triplet transition, while odd parity transitions are relatively insensitive to magnetic field. The measured response agrees well with cavity input-output theory, allowing accurate measurements of the interdot tunnel coupling and the resonator-charge coupling rate g_c/2pi ~ 17 MHz.
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Submitted 18 September, 2012;
originally announced September 2012.
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Circuit Quantum Electrodynamics with a Spin Qubit
Authors:
K. D. Petersson,
L. W. McFaul,
M. D. Schroer,
M. Jung,
J. M. Taylor,
A. A. Houck,
J. R. Petta
Abstract:
Circuit quantum electrodynamics allows spatially separated superconducting qubits to interact via a "quantum bus", enabling two-qubit entanglement and the implementation of simple quantum algorithms. We combine the circuit quantum electrodynamics architecture with spin qubits by coupling an InAs nanowire double quantum dot to a superconducting cavity. We drive single spin rotations using electric…
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Circuit quantum electrodynamics allows spatially separated superconducting qubits to interact via a "quantum bus", enabling two-qubit entanglement and the implementation of simple quantum algorithms. We combine the circuit quantum electrodynamics architecture with spin qubits by coupling an InAs nanowire double quantum dot to a superconducting cavity. We drive single spin rotations using electric dipole spin resonance and demonstrate that photons trapped in the cavity are sensitive to single spin dynamics. The hybrid quantum system allows measurements of the spin lifetime and the observation of coherent spin rotations. Our results demonstrate that a spin-cavity coupling strength of 1 MHz is feasible.
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Submitted 30 May, 2012;
originally announced May 2012.
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Radio frequency charge sensing in InAs nanowire double quantum dots
Authors:
M. Jung,
M. D. Schroer,
K. D. Petersson,
J. R. Petta
Abstract:
We demonstrate charge sensing of an InAs nanowire double quantum dot (DQD) coupled to a radio frequency (rf) circuit. We measure the rf signal reflected by the resonator using homodyne detection. Clear single dot and DQD behavior are observed in the resonator response. rf-reflectometry allows measurements of the DQD charge stability diagram in the few-electron regime even when the dc current throu…
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We demonstrate charge sensing of an InAs nanowire double quantum dot (DQD) coupled to a radio frequency (rf) circuit. We measure the rf signal reflected by the resonator using homodyne detection. Clear single dot and DQD behavior are observed in the resonator response. rf-reflectometry allows measurements of the DQD charge stability diagram in the few-electron regime even when the dc current through the device is too small to be measured. For a signal-to-noise ratio of one, we estimate a minimum charge detection time of 350 microseconds at interdot charge transitions and 9 microseconds for charge transitions with the leads.
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Submitted 29 May, 2012;
originally announced May 2012.
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Measuring the complex admittance of a carbon nanotube double quantum dot
Authors:
S. J. Chorley,
J. Wabnig,
Z. V. Penfold-Fitch,
K. D. Petersson,
J. Frake,
C. G. Smith,
M. R. Buitelaar
Abstract:
We investigate radio-frequency (rf) reflectometry in a tunable carbon nanotube double quantum dot coupled to a resonant circuit. By measuring the in-phase and quadrature components of the reflected rf signal, we are able to determine the complex admittance of the double quantum dot as a function of the energies of the single-electron states. The measurements are found to be in good agreement with…
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We investigate radio-frequency (rf) reflectometry in a tunable carbon nanotube double quantum dot coupled to a resonant circuit. By measuring the in-phase and quadrature components of the reflected rf signal, we are able to determine the complex admittance of the double quantum dot as a function of the energies of the single-electron states. The measurements are found to be in good agreement with a theoretical model of the device in the incoherent limit. Besides being of fundamental interest, our results present an important step forward towards non-invasive charge and spin state readout in carbon nanotube quantum dots.
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Submitted 8 September, 2011;
originally announced September 2011.
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Nonadiabatic quantum control of a semiconductor charge qubit
Authors:
Y. Dovzhenko,
J. Stehlik,
K. D. Petersson,
J. R. Petta,
H. Lu,
A. C. Gossard
Abstract:
We demonstrate multipulse quantum control of a single electron charge qubit. The qubit is manipulated by applying nonadiabatic voltage pulses to a surface depletion gate and readout is achieved using a quantum point contact charge sensor. We observe Ramsey fringes in the excited state occupation in response to a pi/2 - pi/2 pulse sequence and extract T2* ~ 60 ps away from the charge degeneracy poi…
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We demonstrate multipulse quantum control of a single electron charge qubit. The qubit is manipulated by applying nonadiabatic voltage pulses to a surface depletion gate and readout is achieved using a quantum point contact charge sensor. We observe Ramsey fringes in the excited state occupation in response to a pi/2 - pi/2 pulse sequence and extract T2* ~ 60 ps away from the charge degeneracy point. Simulations suggest these results may be extended to implement a charge-echo by reducing the interdot tunnel coupling and pulse rise time, thereby increasing the nonadiabaticity of the pulses.
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Submitted 25 March, 2012; v1 submitted 25 July, 2011;
originally announced July 2011.
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Field Tuning the G-Factor in InAs Nanowire Double Quantum Dots
Authors:
M. D. Schroer,
K. D. Petersson,
M. Jung,
J. R. Petta
Abstract:
We study the effects of magnetic and electric fields on the g-factors of spins confined in a two-electron InAs nanowire double quantum dot. Spin sensitive measurements are performed by monitoring the leakage current in the Pauli blockade regime. Rotations of single spins are driven using electric-dipole spin resonance. The g-factors are extracted from the spin resonance condition as a function of…
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We study the effects of magnetic and electric fields on the g-factors of spins confined in a two-electron InAs nanowire double quantum dot. Spin sensitive measurements are performed by monitoring the leakage current in the Pauli blockade regime. Rotations of single spins are driven using electric-dipole spin resonance. The g-factors are extracted from the spin resonance condition as a function of the magnetic field direction, allowing determination of the full g-tensor. Electric and magnetic field tuning can be used to maximize the g-factor difference and in some cases altogether quench the EDSR response, allowing selective single spin control.
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Submitted 21 March, 2012; v1 submitted 7 May, 2011;
originally announced May 2011.
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Quantum Coherence in a One-Electron Semiconductor Charge Qubit
Authors:
K. D. Petersson,
J. R. Petta,
H. Lu,
A. C. Gossard
Abstract:
We study quantum coherence in a semiconductor charge qubit formed from a GaAs double quantum dot containing a single electron. Voltage pulses are applied to depletion gates to drive qubit rotations and non-invasive state readout is achieved using a quantum point contact charge detector. We measure a maximum coherence time of ~7 ns at the charge degeneracy point, where the qubit level splitting is…
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We study quantum coherence in a semiconductor charge qubit formed from a GaAs double quantum dot containing a single electron. Voltage pulses are applied to depletion gates to drive qubit rotations and non-invasive state readout is achieved using a quantum point contact charge detector. We measure a maximum coherence time of ~7 ns at the charge degeneracy point, where the qubit level splitting is first-order-insensitive to gate voltage fluctuations. We compare measurements of the coherence time as a function of detuning with predictions from a 1/f noise model.
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Submitted 7 May, 2011; v1 submitted 18 August, 2010;
originally announced August 2010.
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Charge and spin state readout of a double quantum dot coupled to a resonator
Authors:
K. D. Petersson,
C. G. Smith,
D. Anderson,
P. Atkinson,
G. A. C. Jones,
D. A. Ritchie
Abstract:
State readout is a key requirement for a quantum computer. For semiconductor-based qubit devices it is usually accomplished using a separate mesoscopic electrometer. Here we demonstrate a simple detection scheme in which a radio-frequency resonant circuit coupled to a semiconductor double quantum dot is used to probe its charge and spin states. These results demonstrate a new non-invasive techniqu…
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State readout is a key requirement for a quantum computer. For semiconductor-based qubit devices it is usually accomplished using a separate mesoscopic electrometer. Here we demonstrate a simple detection scheme in which a radio-frequency resonant circuit coupled to a semiconductor double quantum dot is used to probe its charge and spin states. These results demonstrate a new non-invasive technique for measuring charge and spin states in quantum dot systems without requiring a separate mesoscopic detector.
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Submitted 22 April, 2010;
originally announced April 2010.
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Microwave-Driven Transitions in Two Coupled Semiconductor Charge Qubits
Authors:
K. D. Petersson,
C. G. Smith,
D. Anderson,
P. Atkinson,
G. A. C. Jones,
D. A. Ritchie
Abstract:
We have studied interactions between two capacitively coupled GaAs/AlGaAs few-electron double quantum dots. Each double quantum dot defines a tunable two-level system, or qubit, in which a single excess electron occupies either the ground state of one dot or the other. Applying microwave radiation we resonantly drive transitions between states and non-invasively measure occupancy changes using p…
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We have studied interactions between two capacitively coupled GaAs/AlGaAs few-electron double quantum dots. Each double quantum dot defines a tunable two-level system, or qubit, in which a single excess electron occupies either the ground state of one dot or the other. Applying microwave radiation we resonantly drive transitions between states and non-invasively measure occupancy changes using proximal quantum point contact charge detectors. The level structure of the interacting two-qubit system is probed by driving it at a fixed microwave frequency whilst varying the energy detuning of both double dots. We observe additional resonant transitions consistent with a simple coupled two-qubit Hamiltonian model.
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Submitted 14 July, 2009;
originally announced July 2009.
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Single Shot Charge Detection Using A Radio-Frequency Quantum Point Contact
Authors:
M. C. Cassidy,
A. S. Dzurak,
R. G. Clark,
K. D. Petersson,
I. Farrer,
D. A. Ritchie,
C. G. Smith
Abstract:
We report on charge sensing measurements of a GaAs semiconductor quantum dot device using a radio frequency quantum point contact (rf-QPC). The rf-QPC is fully characterized at 4 K and milli-Kelvin temperatures and found to have a bandwidth exceeding 20 MHz. For single-shot charge sensing we achieve a charge sensitivity of 2x10^-4 e/(sqrt)Hz referred to the neighboring dot's charge. The rf-QPC c…
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We report on charge sensing measurements of a GaAs semiconductor quantum dot device using a radio frequency quantum point contact (rf-QPC). The rf-QPC is fully characterized at 4 K and milli-Kelvin temperatures and found to have a bandwidth exceeding 20 MHz. For single-shot charge sensing we achieve a charge sensitivity of 2x10^-4 e/(sqrt)Hz referred to the neighboring dot's charge. The rf-QPC compares favorably with rf-SET electrometers and promises to be an extremely useful tool for characterizing and measuring semiconductor quantum systems on fast timescales.
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Submitted 6 July, 2009;
originally announced July 2009.
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Bias spectroscopy and simultaneous SET charge state detection of Si:P double dots
Authors:
M. Mitic,
K. D. Petersson,
M. C. Cassidy,
R. P. Starrett,
E. Gauja,
A. J. Ferguson,
C. Yang,
D. N. Jamieson,
R. G. Clark,
A. S. Dzurak
Abstract:
We report a detailed study of low-temperature (mK) transport properties of a silicon double-dot system fabricated by phosphorous ion implantation. The device under study consists of two phosphorous nanoscale islands doped to above the metal-insulator transition, separated from each other and the source and drain reservoirs by nominally undoped (intrinsic) silicon tunnel barriers. Metallic contro…
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We report a detailed study of low-temperature (mK) transport properties of a silicon double-dot system fabricated by phosphorous ion implantation. The device under study consists of two phosphorous nanoscale islands doped to above the metal-insulator transition, separated from each other and the source and drain reservoirs by nominally undoped (intrinsic) silicon tunnel barriers. Metallic control gates, together with an Al-AlOx single-electron transistor, were positioned on the substrate surface, capacitively coupled to the buried dots. The individual double-dot charge states were probed using source-drain bias spectroscopy combined with non-invasive SET charge sensing. The system was measured in linear (VSD = 0) and non-linear (VSD <> 0) regimes allowing calculations of the relevant capacitances. Simultaneous detection using both SET sensing and source-drain current measurements was demonstrated, providing a valuable combination for the analysis of the system. Evolution of the triple points with applied bias was observed using both charge and current sensing. Coulomb diamonds, showing the interplay between the Coulomb charging effects of the two dots, were measured using simultaneous detection and compared with numerical simulations.
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Submitted 4 February, 2008;
originally announced February 2008.