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Statistical Reproducibility of Selective Area Grown InAs Nanowire Devices
Authors:
Dāgs Olšteins,
Gunjan Nagda,
Damon J. Carrad,
Daria V. Beznasyuk,
Christian E. N. Petersen,
Sara Martí-Sánchez,
Jordi Arbiol,
Thomas Sand Jespersen
Abstract:
New approaches such as selective area growth, where crystal growth is lithographically controlled, allow the integration of bottom-up grown semiconductor nanomaterials in large-scale classical and quantum nanoelectronics. This calls for assessment and optimization of the reproducibility between individual components. We quantify the structural and electronic statistical reproducibility within larg…
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New approaches such as selective area growth, where crystal growth is lithographically controlled, allow the integration of bottom-up grown semiconductor nanomaterials in large-scale classical and quantum nanoelectronics. This calls for assessment and optimization of the reproducibility between individual components. We quantify the structural and electronic statistical reproducibility within large arrays of nominally identical selective area growth InAs nanowires. The distribution of structural parameters is acquired through comprehensive atomic force microscopy studies and transmission electron microscopy. These are compared to the statistical distributions of the cryogenic electrical properties of 256 individual SAG nanowire field effect transistors addressed using cryogenic multiplexer circuits. Correlating measurements between successive thermal cycles allows distinguishing between the contributions of surface impurity scattering and fixed structural properties to device reproducibility. The results confirm the potential of SAG nanomaterials, and the methodologies for quantifying statistical metrics are essential for further optimization of reproducibility.
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Submitted 22 May, 2024; v1 submitted 10 January, 2024;
originally announced January 2024.
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Cryogenic Multiplexing with Bottom-Up Nanowires
Authors:
Dāgs Olšteins,
Gunjan Nagda,
Damon J. Carrad,
Daria V. Beznasiuk,
Christian E. N. Petersen,
Sara Martí-Sánchez,
Jordi Arbiol,
Thomas Sand Jespersen
Abstract:
Bottom-up grown nanomaterials play an integral role in the development of quantum technologies. Among these, semiconductor nanowires (NWs) are widely used in proof-of-principle experiments, however, difficulties in parallel processing of conventionally-grown NWs makes scalability unfeasible. Here, we harness selective area growth (SAG) to remove this road-block. We demonstrate large scale integrat…
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Bottom-up grown nanomaterials play an integral role in the development of quantum technologies. Among these, semiconductor nanowires (NWs) are widely used in proof-of-principle experiments, however, difficulties in parallel processing of conventionally-grown NWs makes scalability unfeasible. Here, we harness selective area growth (SAG) to remove this road-block. We demonstrate large scale integrated SAG NW circuits consisting of 512 channel multiplexer/demultiplexer pairs, incorporating thousands of interconnected SAG NWs operating under deep cryogenic conditions. Multiplexers enable a range of new strategies in quantum device research and scaling by increase the device count while limiting the number of connections between room-temperature control electronics and the cryogenic samples. As an example of this potential we perform a statistical characterization of large arrays of identical SAG quantum dots thus establishing the feasibility of applying cross-bar gating strategies for efficient scaling of future SAG quantum circuits.
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Submitted 25 April, 2023;
originally announced April 2023.
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Photon assisted tunneling of high order multiple Andreev reflections in epitaxial nanowire Josephson junctions
Authors:
Damon J. Carrad,
Lukas Stampfer,
Dags Olsteins,
Christian E. N. Petersen,
Sabbir A. Khan,
Peter Krogstrup,
Thomas Sand Jespersen
Abstract:
Semiconductor/superconductor hybrids exhibit a range of phenomena that can be exploited for the study of novel physics and the development of new technologies. Understanding the origin the energy spectrum of such hybrids is therefore a crucial goal. Here, we study Josephson junctions defined by shadow epitaxy on InAsSb/Al nanowires. The devices exhibit gate-tunable supercurrents at low temperature…
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Semiconductor/superconductor hybrids exhibit a range of phenomena that can be exploited for the study of novel physics and the development of new technologies. Understanding the origin the energy spectrum of such hybrids is therefore a crucial goal. Here, we study Josephson junctions defined by shadow epitaxy on InAsSb/Al nanowires. The devices exhibit gate-tunable supercurrents at low temperatures and multiple Andreev reflections (MARs) at finite voltage bias. Under microwave irradiation, photon assisted tunneling (PAT) of MARs produces characteristic oscillating sidebands at quantized energies, which depend on MAR order, $n$, in agreement with a recently suggested modification of the classical Tien-Gordon equation. The scaling of the quantized energy spacings with microwave frequency provides independent confirmation of the effective charge $ne$ transferred by the $n^\mathrm{th}$ order tunnel process. The measurements suggest PAT as a powerful method for assigning the origin of low energy spectral features in hybrid Josephson devices.
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Submitted 26 July, 2022; v1 submitted 6 May, 2022;
originally announced May 2022.
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Andreev interference in the surface accumulation layer of half-shell InAsSb/Al hybrid nanowires
Authors:
Lukas Stampfer,
Damon J. Carrad,
Dags Olsteins,
Christian E. N. Petersen,
Sabbir A. Khan,
Peter Krogstrup,
Thomas S. Jespersen
Abstract:
Understanding the spatial distribution of charge carriers in III-V nanowires proximity coupled to superconductors is important for the design and interpretation of experiments based on hybrid quantum devices. In this letter, the gate-dependent surface accumulation layer of InAsSb/Al nanowires was studied by means of Andreev interference in a parallel magnetic field. Both uniform hybrid nanowires a…
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Understanding the spatial distribution of charge carriers in III-V nanowires proximity coupled to superconductors is important for the design and interpretation of experiments based on hybrid quantum devices. In this letter, the gate-dependent surface accumulation layer of InAsSb/Al nanowires was studied by means of Andreev interference in a parallel magnetic field. Both uniform hybrid nanowires and devices featuring a short Josephson junction fabricated by shadow lithography, exhibited periodic modulation of the switching current. The period corresponds to a flux quantum through the nanowire diameter and is consistent with Andreev bound states occupying a cylindrical surface accumulation layer. The spatial distribution was tunable by a gate potential as expected from electrostatic models.
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Submitted 1 April, 2021;
originally announced April 2021.
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Doubling the mobility of InAs/InGaAs selective area grown nanowires
Authors:
Daria V. Beznasyuk,
Sara Martí-Sánchez,
Jung-Hyun Kang,
Rawa Tanta,
Mohana Rajpalke,
Tomaš Stankevič,
Anna Wulff Christensen,
Maria Chiara Spadaro,
Roberto Bergamaschini,
Nikhil N. Maka,
Christian Emanuel N. Petersen,
Damon J. Carrad,
Thomas Sand Jespersen,
Jordi Arbiol,
Peter Krogstrup
Abstract:
Selective area growth (SAG) of nanowires and networks promise a route toward scalable electronics, photonics and quantum devices based on III-V semiconductor materials. The potential of high-mobility SAG nanowires however is not yet fully realized, since interfacial roughness, misfit dislocations at the nanowire/substrate interface and non-uniform composition due to material intermixing all scatte…
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Selective area growth (SAG) of nanowires and networks promise a route toward scalable electronics, photonics and quantum devices based on III-V semiconductor materials. The potential of high-mobility SAG nanowires however is not yet fully realized, since interfacial roughness, misfit dislocations at the nanowire/substrate interface and non-uniform composition due to material intermixing all scatter electrons. Here, we explore SAG of highly lattice-mismatched InAs nanowires on insulating GaAs(001) substrates and address these key challenges. Atomically smooth nanowire/substrate interfaces are achieved with the use of atomic hydrogen (a-H) as an alternative to conventional thermal annealing for the native oxide removal. The problem of high lattice mismatch is addressed through an In$_x$Ga$_{1-x}$As buffer layer introduced between the InAs transport channel and the GaAs substrate. The Ga-In material intermixing observed in both the buffer layer and the channel is inhibited via careful tuning of the growth temperature. Performing scanning transmission electron microscopy and x-ray diffraction analysis along with low-temperature transport measurements we show that optimized In-rich buffer layers promote high quality InAs transport channels with the field-effect electron mobility over~10000~cm$^2$V$^{-1}$s$^{-1}$. This is twice as high as for non-optimized samples and among the highest reported for InAs selective area grown nanostructures.
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Submitted 4 February, 2022; v1 submitted 29 March, 2021;
originally announced March 2021.
