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Ultraprecise optical-frequency stabilization with heterogeneous III-V/Si lasers
Authors:
Liron Stern,
Wei Zhang,
Lin Chang,
Joel Guo,
Chao Xiang,
Minh A. Tran,
Duanni Huang,
Jonathan D. Peters,
David Kinghorn,
John E. Bowers,
Scott B. Papp
Abstract:
Demand for low-noise, continuous-wave, frequency-tunable lasers based on semiconductor integrated photonics has been advancing in support of numerous applications. In particular, an important goal is to achieve narrow spectral linewidth, commensurate with bulk-optic or fiber-optic laser platforms. Here, we report on laser-frequency-stabilization experiments with a heterogeneously integrated III/V-…
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Demand for low-noise, continuous-wave, frequency-tunable lasers based on semiconductor integrated photonics has been advancing in support of numerous applications. In particular, an important goal is to achieve narrow spectral linewidth, commensurate with bulk-optic or fiber-optic laser platforms. Here, we report on laser-frequency-stabilization experiments with a heterogeneously integrated III/V-Si widely tunable laser and a high-finesse, thermal-noise-limited photonic resonator. This hybrid architecture offers a chip-scale optical-frequency reference with an integrated linewidth of 60 Hz and a fractional frequency stability of 2.5e-13 at 1-second integration time. We explore the potential for stabilization with respect to a resonator with lower thermal noise by characterizing laser-noise contributions such as residual amplitude modulation and photodetection noise. Widely tunable, compact and integrated, cost effective, stable and narrow linewidth lasers are envisioned for use in various fields, including communication, spectroscopy, and metrology.
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Submitted 4 July, 2020;
originally announced July 2020.
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Ultrahigh-Q AlGaAs-on-insulator microresonators for integrated nonlinear photonics
Authors:
Weiqiang Xie,
Lin Chang,
Haowen Shu,
Justin C. Norman,
Jon D. Peters,
Xingjun Wang,
John E. Bowers
Abstract:
Aluminum gallium arsenide (AlGaAs) and related III-V semiconductors have excellent optoelectronic properties. They also possess strong material nonlinearity as well as high refractive indices. In view of these properties, AlGaAs is a promising candidate for integrated photonics, including both linear and nonlinear devices, passive and active devices, and associated applications. For integrated pho…
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Aluminum gallium arsenide (AlGaAs) and related III-V semiconductors have excellent optoelectronic properties. They also possess strong material nonlinearity as well as high refractive indices. In view of these properties, AlGaAs is a promising candidate for integrated photonics, including both linear and nonlinear devices, passive and active devices, and associated applications. For integrated photonics low propagation loss is essential, particularly in nonlinear applications. However, achieving low-loss and high-confinement AlGaAs photonic integrated circuits poses a challenge. Here we show an effective reduction of surface-roughness-induced scattering loss in fully etched high-confinement AlGaAs-on-insulator nanowaveguides, by using a heterogeneous wafer-bonding approach and optimizing fabrication techniques. We demonstrate ultrahigh-quality AlGaAs microring resonators and realize quality factors up to 3.52E6 and finesses as high as 1.4E4. We also show ultra-efficient frequency comb generations in those resonators and achieve record-low threshold powers on the order of ~20 uW and ~120 uW for the resonators with 1 THz and 90 GHz free-spectral ranges, respectively. Our result paves the way for the implementation of AlGaAs as a novel integrated material platform specifically for nonlinear photonics, and opens a new window for chip-based efficiency-demanding practical applications.
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Submitted 29 April, 2020;
originally announced April 2020.
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A narrow-linewidth III-V/Si/Si3N4 laser using multilayer heterogeneous integration
Authors:
Chao Xiang,
Warren **,
Joel Guo,
Jonathan D. Peters,
MJ Kennedy,
Jennifer Selvidge,
Paul A. Morton,
John E. Bowers
Abstract:
Silicon nitride (Si3N4), as a complementary metal-oxide-semiconductor (CMOS) material, finds wide use in modern integrated circuit (IC) technology. The past decade has witnessed tremendous development of Si3N4 in photonic areas, with innovations in nonlinear photonics, optical sensing, etc. However, the lack of an integrated laser with high performance prohibits the large-scale integration of Si3N…
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Silicon nitride (Si3N4), as a complementary metal-oxide-semiconductor (CMOS) material, finds wide use in modern integrated circuit (IC) technology. The past decade has witnessed tremendous development of Si3N4 in photonic areas, with innovations in nonlinear photonics, optical sensing, etc. However, the lack of an integrated laser with high performance prohibits the large-scale integration of Si3N4 waveguides into complex photonic integrated circuits (PICs). Here, we demonstrate a novel III-V/Si/Si3N4 structure to enable efficient electrically pumped lasing in a Si3N4 based laser external cavity. The laser shows superior temperature stability and low phase noise compared with lasers purely dependent on semiconductors. Beyond this, the demonstrated multilayer heterogeneous integration provides a practical path to incorporate efficient optical gain with various low-refractive-index materials. Multilayer heterogeneous integration could extend the capabilities of semiconductor lasers to improve performance and enable a new class of devices such as integrated optical clocks and optical gyroscopes.
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Submitted 1 November, 2019;
originally announced November 2019.
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Ultra-efficient frequency comb generation in AlGaAs-on-insulator microresonators
Authors:
Lin Chang,
Weiqiang Xie,
Haowen Shu,
Qifan Yang,
Boqiang Shen,
Andreas Boes,
Jon D. Peters,
Warren **,
Songtao Liu,
Gregory Moille,
Su-Peng Yu,
Xingjun Wang,
Kartik Srinivasan,
Scott B. Papp,
Kerry Vahala,
John E. Bowers
Abstract:
Recent advances in nonlinear optics have revolutionized the area of integrated photonics, providing on-chip solutions to a wide range of new applications. Currently, the state of the art integrated nonlinear photonic devices are mainly based on dielectric material platforms, such as Si3N4 and SiO2. While semiconductor materials hold much higher nonlinear coefficients and convenience in active inte…
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Recent advances in nonlinear optics have revolutionized the area of integrated photonics, providing on-chip solutions to a wide range of new applications. Currently, the state of the art integrated nonlinear photonic devices are mainly based on dielectric material platforms, such as Si3N4 and SiO2. While semiconductor materials hold much higher nonlinear coefficients and convenience in active integration, they suffered in the past from high waveguide losses that prevented the realization of highly efficient nonlinear processes on-chip. Here we challenge this status quo and demonstrate an ultra-low loss AlGaAs-on-insulator (AlGaAsOI) platform with anomalous dispersion and quality (Q) factors beyond 1.5*10^6. Such a high quality factor, combined with the high nonlinear coefficient and the small mode volume, enabled us to demonstrate a record low Kerr frequency comb generation threshold of ~36 uW for a resonator with a 1 THz free spectral range (FSR), ~100 times lower compared to that in previous semiconductor platform. Combs with >250 nm broad span have been generated under a pump power lower than the threshold power of state of the art dielectric micro combs. A soliton-step transition has also been observed for the first time from an AlGaAs resonator. This work is an important step towards ultra-efficient semiconductor-based nonlinear photonics and will lead to fully integrated nonlinear photonic integrated circuits (PICs) in near future.
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Submitted 21 September, 2019;
originally announced September 2019.
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Improved second harmonic performance in periodically poled LNOI waveguides through engineering of lateral leakage
Authors:
Andreas Boes,
Lin Chang,
Markus Knoerzer,
Thach G. Nguyen,
Jon D. Peters,
John E. Bowers,
Arnan Mitchell
Abstract:
In this contribution we investigate the impact of lateral leakage for linear and nonlinear optical waveguides in lithium niobate on insulator (LNOI). Silicon nitride (SiN) loaded and direct patterned lithium niobate cross-sections are investigated. We show that lateral leakage can take place for the TE mode in LNOI ridge waveguides (X-cut lithium niobate), due to the birefringence of the material.…
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In this contribution we investigate the impact of lateral leakage for linear and nonlinear optical waveguides in lithium niobate on insulator (LNOI). Silicon nitride (SiN) loaded and direct patterned lithium niobate cross-sections are investigated. We show that lateral leakage can take place for the TE mode in LNOI ridge waveguides (X-cut lithium niobate), due to the birefringence of the material. This work gives guidelines for designing waveguides in LNOI that do not suffer from the lateral leakage effect. By applying these design considerations, we avoided the lateral leakage effect at the second harmonic wavelength of a nonlinear optical waveguide in LNOI and demonstrate a peak second harmonic generation conversion efficiency of ~1160% W-1cm-2.
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Submitted 11 September, 2019; v1 submitted 5 June, 2019;
originally announced June 2019.
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Heterogeneously integrated GaAs waveguides on insulator for efficient frequency conversion
Authors:
Lin Chang,
Andreas Boes,
Xiaowen Guo,
Daryl T. Spencer,
MJ. Kennedy,
Jon D. Peters,
Nicolas Volet,
Jeff Chiles,
Abijith Kowligy,
Nima Nader,
Daniel D. Hickstein,
Eric J. Stanton,
Scott A. Diddams,
Scott B. Papp,
John E. Bowers
Abstract:
Tremendous scientific progress has been achieved through the development of nonlinear integrated photonics. Prominent examples are Kerr-frequency-comb generation in micro-resonators, and supercontinuum generation and frequency conversion in nonlinear photonic waveguides. High conversion efficiency is enabling for applications of nonlinear optics, including such broad directions as high-speed optic…
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Tremendous scientific progress has been achieved through the development of nonlinear integrated photonics. Prominent examples are Kerr-frequency-comb generation in micro-resonators, and supercontinuum generation and frequency conversion in nonlinear photonic waveguides. High conversion efficiency is enabling for applications of nonlinear optics, including such broad directions as high-speed optical signal processing, metrology, and quantum communication and computation. In this work, we demonstrate a gallium-arsenide-on-insulator (GaAs) platform for nonlinear photonics. GaAs has among the highest second- and third-order nonlinear optical coefficients, and use of a silica cladding results in waveguides with a large refractive index contrast and low propagation loss for expanded design of nonlinear processes. By harnessing these properties and develo** nanofabrication with GaAs, we report a record normalized second-harmonic efficiency of 13,000% W-1cm-2 at a fundamental wavelength of 2 um. This work paves the way for high performance nonlinear photonic integrated circuits (PICs), which not only can transition advanced functionalities outside the lab through fundamentally reduced power consumption and footprint, but also enables future optical sources and detectors.
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Submitted 29 May, 2018; v1 submitted 23 May, 2018;
originally announced May 2018.
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An electrical probe of the phonon mean-free path spectrum
Authors:
Ashok T. Ramu,
Nicole I. Halaszynski,
Jonathan D. Peters,
Carl D. Meinhart,
John E. Bowers
Abstract:
Most studies of the mean-free path accumulation function (MFPAF) rely on optical techniques to probe heat transfer at length scales on the order of the phonon mean-free path. In this paper, we propose and implement a purely electrical probe of the MFPAF that relies on photo-lithographically defined heater-thermometer separation to set the length scale. An important advantage of the proposed techni…
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Most studies of the mean-free path accumulation function (MFPAF) rely on optical techniques to probe heat transfer at length scales on the order of the phonon mean-free path. In this paper, we propose and implement a purely electrical probe of the MFPAF that relies on photo-lithographically defined heater-thermometer separation to set the length scale. An important advantage of the proposed technique is its insensitivity to the thermal interfacial impedance and its compatibility with a large array of temperature-controlled chambers that lack optical ports. Detailed analysis of the experimental data based on the enhanced Fourier law (EFL) demonstrates that heat-carrying phonons in gallium arsenide have a much wider mean-free path spectrum than originally thought.
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Submitted 11 February, 2016; v1 submitted 31 January, 2016;
originally announced February 2016.
