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Transfer-printed multiple Ge$_{0.89}$Sn$_{0.11}$ membrane mid-infrared photodetectors
Authors:
Cédric Lemieux-Leduc,
Mahmoud R. M. Atalla,
Simone Assali,
Sebastian Koelling,
Patrick Daoust,
Lu Luo,
Gérard Daligou,
Julien Brodeur,
Stéphane Kéna-Cohen,
Yves-Alain Peter,
Oussama Moutanabbir
Abstract:
Due to their narrow band gap and compatibility with silicon processing, germanium-tin (Ge$_{1-x}$Sn$_x$) alloys are a versatile platform for scalable integrated mid-infrared photonics. These semiconductors are typically grown on silicon wafers using Ge as an interlayer. However, the large lattice mismatch in this heteroepitaxy protocol leads to the build-up of compressive strain in the grown layer…
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Due to their narrow band gap and compatibility with silicon processing, germanium-tin (Ge$_{1-x}$Sn$_x$) alloys are a versatile platform for scalable integrated mid-infrared photonics. These semiconductors are typically grown on silicon wafers using Ge as an interlayer. However, the large lattice mismatch in this heteroepitaxy protocol leads to the build-up of compressive strain in the grown layers. This compressive strain limits the material quality and its thermal stability besides expanding the band gap, thereby increasing the Sn content needed to cover a broader range in the mid-infrared. Released Ge$_{1-x}$Sn$_x$ membranes provide an effective way to mitigate these harmful effects of the epitaxial strain and control the band gap energy while enabling the hybrid integration onto different substrates. With this perspective, herein strain-relaxed Ge$_{0.89}$Sn$_{0.11}$ membranes are fabricated and subsequently transfer-printed with metal contacts to create multiple photodetectors in a single transfer step. The resulting photodetectors exhibit an extended photodetection cutoff reaching a wavelength of $3.1 \,μ$m, coupled with a significant reduction in the dark current of two orders of magnitude as compared to as-grown photoconductive devices. The latter yields a reduced cutoff of $2.8 \,μ$m due to the inherent compressive strain. Furthermore, the impact of chemical treatment and annealing on the device performance was also investigated showing a further reduction in the dark current. The demonstrated transfer printing, along with the use of an adhesive layer, would allow the transfer of multiple GeSn membranes onto virtually any substrate. This approach paves the way for scalable fabrication of hybrid optoelectronic devices leveraging the tunable band gap of Ge$_{1-x}$Sn$_x$ in the mid-wave infrared range.
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Submitted 5 February, 2024;
originally announced February 2024.
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Custom nonlinearity profile for integrated quantum light sources
Authors:
Salvador Poveda-Hospital,
Nicolás Quesada,
Yves-Alain Peter
Abstract:
Heralded single-photon sources are a fundamental building block for optical quantum technologies. These sources need to be unfiltered and integrated to have good scalability and avoid unnecessary losses. To attain this goal, it is necessary to control the effective nonlinearity seen by the fields as they mix and propagate in a waveguide source. In this paper, we introduce a method to design nonlin…
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Heralded single-photon sources are a fundamental building block for optical quantum technologies. These sources need to be unfiltered and integrated to have good scalability and avoid unnecessary losses. To attain this goal, it is necessary to control the effective nonlinearity seen by the fields as they mix and propagate in a waveguide source. In this paper, we introduce a method to design nonlinear waveguides with arbitrarily shaped effective nonlinearity profiles. The method takes advantage of the fact that the second order nonlinear response is a tensor quantity and thus the local effective nonlinearity of a material depends on the propagation direction of the fields participating in the interaction. Thus, by locally changing the propagation direction of the fields we can modulate the wave-mixing process. Our methods allows for the waveguide fabrication process to be significantly simplified: The material structure of the waveguide is made by a single crystal, no longer needing oriented patterning (OP) or periodic poling (PP). We use our method to design waveguides with a nonlinearity profile that is Gaussian in the propagation length, allowing to generate perfectly pure heralded single photons.
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Submitted 7 April, 2023; v1 submitted 4 July, 2022;
originally announced July 2022.
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Etch-Tuning and Design of Silicon Nitride Photonic Crystal Reflectors
Authors:
Simon Bernard,
Christoph Reinhardt,
Vincent Dumont,
Yves-Alain Peter,
Jack C. Sankey
Abstract:
By patterning a freestanding dielectric membrane into a photonic crystal reflector (PCR), it is possible to resonantly enhance its normal-incidence reflectivity, thereby realizing a thin, single-material mirror. In many PCR applications, the operating wavelength (e.g. that of a low-noise laser or emitter) is not tunable, imposing tolerances on crystal geometry that are not reliably achieved with s…
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By patterning a freestanding dielectric membrane into a photonic crystal reflector (PCR), it is possible to resonantly enhance its normal-incidence reflectivity, thereby realizing a thin, single-material mirror. In many PCR applications, the operating wavelength (e.g. that of a low-noise laser or emitter) is not tunable, imposing tolerances on crystal geometry that are not reliably achieved with standard nanolithography. Here we present a gentle technique to finely tune the resonant wavelength of a SiN PCR using iterative hydrofluoric acid etches. With little optimization, we achieve a 57-nm-thin photonic crystal having an operating wavelength within 0.15 nm (0.04 resonance linewidths) of our target (1550 nm). Our thin structure exhibits a broader and less pronounced transmission dip than is predicted by plane wave simulations, and we identify two effects leading to these discrepancies, both related to the divergence angle of a collimated laser beam. To overcome this limitation in future devices, we distill a series of simulations into a set of general design considerations for realizing robust, high-reflectivity resonances.
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Submitted 8 September, 2016; v1 submitted 3 September, 2016;
originally announced September 2016.
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Simultaneous measurement of quality factor and wavelength shift by phase shift microcavity ring down spectroscopy
Authors:
M. Imran Cheema,
Simin Mehrabani,
Ahmad A. Hayat,
Yves-Alain Peter,
Andrea M. Armani,
Andrew G. Kirk
Abstract:
Optical resonant microcavities with ultra high quality factors are widely used for biosensing. Until now, the primary method of detection has been based upon tracking the resonant wavelength shift as a function of biodetection events. One of the sources of noise in all resonant-wavelength shift measurements is the noise due to intensity fluctuations of the laser source. An alternative approach is…
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Optical resonant microcavities with ultra high quality factors are widely used for biosensing. Until now, the primary method of detection has been based upon tracking the resonant wavelength shift as a function of biodetection events. One of the sources of noise in all resonant-wavelength shift measurements is the noise due to intensity fluctuations of the laser source. An alternative approach is to track the change in the quality factor of the optical cavity by using phase shift cavity ring down spectroscopy, a technique which is insensitive to the intensity fluctuations of the laser source. Here, using biotinylated microtoroid resonant cavities, we show simultaneous measurement of the quality factor and the wavelength shift by using phase shift cavity ring down spectroscopy. These measurements were performed for disassociation phase of biotin-streptavidin reaction. We found that the disassociation curves are in good agreement with the previously published results. Hence, we demonstrate not only the application of phase shift cavity ring down spectroscopy to microcavities in the liquid phase but also simultaneous measurement of the quality factor and the wavelength shift for the microcavity biosensors in the application of kinetics measurements.
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Submitted 27 March, 2012; v1 submitted 1 March, 2012;
originally announced March 2012.
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A New Model of Fringing Capacitance and its Application to the Control of Parallel-Plate Electrostatic Micro Actuators
Authors:
M. Hosseini,
G. Zhu,
Y. -A. Peter
Abstract:
Fringing field has to be taken into account in the formulation of electrostatic parallel-plate actuators when the gap separating the electrodes is comparable to the geometrical dimensions of the moving plate. Even in this case, the existing formulations often result in complicated mathematical models from which it is difficult to determine the deflection of the moving plate for given voltages an…
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Fringing field has to be taken into account in the formulation of electrostatic parallel-plate actuators when the gap separating the electrodes is comparable to the geometrical dimensions of the moving plate. Even in this case, the existing formulations often result in complicated mathematical models from which it is difficult to determine the deflection of the moving plate for given voltages and therefore to predict the necessary applied voltages for actuation control. This work presents a new method for the modeling of fringing field, in which the effect of fringing field is modeled as a serial capacitor. Numerical simulation demonstrates the suitability of this formulation. Based on this model, a robust control scheme is constructed using the theory of input-to-state stabilization (ISS) and back-step** state feedback design. The stability and the performance of the system using this control scheme are demonstrated through both stability analysis and numerical simulation.
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Submitted 21 November, 2007;
originally announced November 2007.
