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Showing 1–50 of 118 results for author: Pershin, Y V

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  1. arXiv:2405.14442  [pdf, other

    cs.ET nlin.CD

    Fully parallel implementation of digital memcomputing on FPGA

    Authors: Dyk Chung Nguyen, Yuriy V. Pershin

    Abstract: We present a fully parallel digital memcomputing solver implemented on a field-programmable gate array (FPGA) board. For this purpose, we have designed an FPGA code that solves the ordinary differential equations associated with digital memcomputing in parallel. A feature of the code is the use of only integer-type variables and integer constants to enhance optimization. Consequently, each integra… ▽ More

    Submitted 23 May, 2024; originally announced May 2024.

  2. arXiv:2404.01507  [pdf, other

    cs.ET cond-mat.mes-hall

    Reduction of Joule Losses in Memristive Switching Using Optimal Control

    Authors: Valeriy A. Slipko, Yuriy V. Pershin

    Abstract: Electricity production from fossil fuels is among the main contributors to global warming. To suppress climate change, energy-efficient systems, devices, and technologies must be implemented. This study investigates strategies for minimizing Joule losses in resistive random access memory (ReRAM) cells, which are also referred to as memristive devices. The basic question that we ask is what is the… ▽ More

    Submitted 25 May, 2024; v1 submitted 1 April, 2024; originally announced April 2024.

  3. arXiv:2403.01627  [pdf, other

    cs.ET nlin.CD

    Acceleration of digital memcomputing by jumps

    Authors: Yuriy V. Pershin

    Abstract: In this article, we present the potential benefits of incorporating jumps into the dynamics of digital memcomputing machines (DMMs), which have been developed to address complex optimization problems. We illustrate the potential speed improvement of a DMM solver with jumps over an unmodified DMM solver by solving Boolean satisfiability (SAT) problems of different complicatedness. Our findings sugg… ▽ More

    Submitted 3 March, 2024; originally announced March 2024.

  4. arXiv:2307.14505  [pdf, other

    cs.ET cond-mat.dis-nn

    SPICE Modeling of Memcomputing Logic Gates

    Authors: Y. V. Pershin

    Abstract: Memcomputing logic gates generalize the traditional Boolean logic gates for operation in the reverse direction. According to the literature, this functionality enables the efficient solution of computationally-intensive problems including factorization and NP-complete problems. To approach the deployment of memcomputing gates in hardware, this paper introduces SPICE models of memcomputing logic ga… ▽ More

    Submitted 26 July, 2023; originally announced July 2023.

    Journal ref: Radioengineering 32, 542-556 (2023)

  5. Hardware implementation of digital memcomputing on small-size FPGAs

    Authors: Dyk Chung Nguyen, Yuan-Hang Zhang, Massimiliano Di Ventra, Yuriy V. Pershin

    Abstract: Memcomputing is a novel computing paradigm beyond the von-Neumann one. Its digital version is designed for the efficient solution of combinatorial optimization problems, which emerge in various fields of science and technology. Previously, the performance of digital memcomputing machines (DMMs) was demonstrated using software simulations of their ordinary differential equations. Here, we present t… ▽ More

    Submitted 1 May, 2023; originally announced May 2023.

    Journal ref: 2023 IEEE 66th International Midwest Symposium on Circuits and Systems (MWSCAS), Tempe, AZ, USA, 2023, pp. 346-350

  6. arXiv:2304.10899  [pdf, other

    cs.ET cond-mat.mes-hall

    Electromechanical memcapacitive neurons for energy-efficient spiking neural networks

    Authors: Zixi Zhang, Yuriy V. Pershin, Ivar Martin

    Abstract: In this article, we introduce a new nanoscale electromechanical device -- a leaky memcapacitor -- and show that it may be useful for the hardware implementation of spiking neurons. The leaky memcapacitor is a movable-plate capacitor that becomes quite conductive when the plates come close to each other. The equivalent circuit of the leaky memcapacitor involves a memcapacitive and memristive system… ▽ More

    Submitted 21 April, 2023; originally announced April 2023.

    Journal ref: Chaos, Solitons & Fractals 181, 114601 (2024)

  7. arXiv:2302.03079  [pdf, other

    cond-mat.mes-hall cs.ET

    A probabilistic model of resistance jumps in memristive devices

    Authors: V. A. Slipko, Y. V. Pershin

    Abstract: Resistance switching memory cells such as electrochemical metallization cells and valence change mechanism cells have the potential to revolutionize information processing and storage. However, the creation of deterministic resistance switching devices is a challenging problem that is still open. At present, the modeling of resistance switching cells is dominantly based on deterministic models tha… ▽ More

    Submitted 6 February, 2023; originally announced February 2023.

    Journal ref: Phys. Rev. E 107, 064117 (2023)

  8. arXiv:2301.06727  [pdf

    cs.ET physics.app-ph

    Roadmap for Unconventional Computing with Nanotechnology

    Authors: Giovanni Finocchio, Jean Anne C. Incorvia, Joseph S. Friedman, Qu Yang, Anna Giordano, Julie Grollier, Hyunsoo Yang, Florin Ciubotaru, Andrii Chumak, Azad J. Naeemi, Sorin D. Cotofana, Riccardo Tomasello, Christos Panagopoulos, Mario Carpentieri, Peng Lin, Gang Pan, J. Joshua Yang, Aida Todri-Sanial, Gabriele Boschetto, Kremena Makasheva, Vinod K. Sangwan, Amit Ranjan Trivedi, Mark C. Hersam, Kerem Y. Camsari, Peter L. McMahon , et al. (26 additional authors not shown)

    Abstract: In the "Beyond Moore's Law" era, with increasing edge intelligence, domain-specific computing embracing unconventional approaches will become increasingly prevalent. At the same time, adopting a variety of nanotechnologies will offer benefits in energy cost, computational speed, reduced footprint, cyber resilience, and processing power. The time is ripe for a roadmap for unconventional computing w… ▽ More

    Submitted 27 February, 2024; v1 submitted 17 January, 2023; originally announced January 2023.

    Comments: 80 pages accepted in Nano Futures

    Journal ref: Nano Futures (2024)

  9. arXiv:2210.04257  [pdf, other

    cond-mat.mes-hall cond-mat.stat-mech cs.ET

    Memristive Ising Circuits

    Authors: V. J. Dowling, Y. V. Pershin

    Abstract: The Ising model is of prime importance in the field of statistical mechanics. Here we show that Ising-type interactions can be realized in periodically-driven circuits of stochastic binary resistors with memory. A key feature of our realization is the simultaneous co-existence of ferromagnetic and antiferromagnetic interactions between two neighboring spins -- an extraordinary property not availab… ▽ More

    Submitted 9 October, 2022; originally announced October 2022.

    Journal ref: Phys. Rev. E 106, 054156 (2022)

  10. arXiv:2201.10121  [pdf, other

    cs.ET cond-mat.mes-hall

    Analytic and SPICE modeling of stochastic ReRAM circuits

    Authors: V. J. Dowling, V. A. Slipko, Y. V. Pershin

    Abstract: The modeling of conventional (deterministic) electronic circuits - ones consisting of transistors, resistors, capacitors, inductors, and other traditional electronic components - is a well-established subject. The cycle-to-cycle variability of emerging electronic devices, in particular, certain ReRAM cells, has led to the concept of stochastic circuits. Unfortunately, even in relatively simple cas… ▽ More

    Submitted 25 January, 2022; originally announced January 2022.

    Comments: to be published the Proceedings of SPIE dedicated to ICMNE-2021

    Journal ref: Proc. SPIE 12157, International Conference on Micro- and Nano-Electronics 2021, 1215709 (2022)

  11. arXiv:2111.11557  [pdf, other

    physics.app-ph cond-mat.mes-hall

    Holy memristor

    Authors: J. Kim, V. J. Dowling, T. Datta, Y. V. Pershin

    Abstract: It was recently shown that when a drop of Glenlivet whiskey evaporates, it leaves behind a uniform deposit [PRL 116, 124501 (2016)]. We utilize this fascinating finding in the fabrication of electrochemical metallization memory (ECM) cells. The top (Ag) and bottom (Co) electrodes in our structure are separated by a layer of Glenlivet whiskey deposit (an insulator). Measurements show the device res… ▽ More

    Submitted 5 May, 2022; v1 submitted 22 November, 2021; originally announced November 2021.

    Journal ref: Physica status solidi (a) 220, 2200643 (2023)

  12. arXiv:2109.03428  [pdf, other

    cond-mat.mes-hall cond-mat.other

    Custodial chiral symmetry in a Su-Schrieffer-Heeger electrical circuit with memory

    Authors: Massimiliano Di Ventra, Yuriy V. Pershin, Chih-Chun Chien

    Abstract: Custodial symmetries are common in the Standard Model of particle physics. They arise when quantum corrections to a parameter are proportional to the parameter itself. Here, we show that a custodial symmetry of the chiral type is also present in a classical Su-Schrieffer-Heeger (SSH) electrical circuit with memory (memcircuit). In the absence of memory, the SSH circuit supports a symmetry-protecte… ▽ More

    Submitted 4 March, 2022; v1 submitted 8 September, 2021; originally announced September 2021.

    Comments: 11 pages, 11 figures

    Journal ref: Phys. Rev. Lett. 128, 097701 (2022)

  13. arXiv:2102.11963  [pdf, other

    cond-mat.mes-hall cs.ET

    An experimental demonstration of the memristor test

    Authors: Y. V. Pershin, J. Kim, T. Datta, M. Di Ventra

    Abstract: A simple and unambiguous test has been recently suggested [J. Phys. D: Applied Physics, 52, 01LT01 (2018)] to check experimentally if a resistor with memory is indeed a memristor, namely a resistor whose resistance depends only on the charge that flows through it, or on the history of the voltage across it. However, although such a test would represent the litmus test for claims about memristors (… ▽ More

    Submitted 23 February, 2021; originally announced February 2021.

    Journal ref: Physica E: Low-dimensional Systems and Nanostructures, Volume 142, 115290 (2022)

  14. arXiv:2102.08144  [pdf, other

    cond-mat.mes-hall nlin.PS

    The influence of constriction on the motion of graphene kinks

    Authors: D. C. Nguyen, R. D. Yamaletdinov, Y. V. Pershin

    Abstract: Graphene kinks are topological states of buckled graphene membranes. We show that when a moving kink encounters a constriction, there are three general classes of behavior: reflection, trap**, and transmission. Overall, constriction is characterized by an attractive potential. In the case of a simple symmetric constriction, the kink potential energy has a relatively deep minimum surrounded by en… ▽ More

    Submitted 10 April, 2021; v1 submitted 16 February, 2021; originally announced February 2021.

    Journal ref: Phys. Rev. B 103, 224312 (2021)

  15. arXiv:2101.12144  [pdf, other

    cs.ET cond-mat.mes-hall

    Theory of heterogeneous circuits with stochastic memristive devices

    Authors: V. A. Slipko, Y. V. Pershin

    Abstract: We introduce an approach based on the Chapman-Kolmogorov equation to model heterogeneous stochastic circuits, namely, the circuits combining binary or multi-state stochastic memristive devices and continuum reactive components (capacitors and/or inductors). Such circuits are described in terms of occupation probabilities of memristive states that are functions of reactive variables. As an illustra… ▽ More

    Submitted 29 January, 2021; v1 submitted 28 January, 2021; originally announced January 2021.

    Journal ref: in IEEE Transactions on Circuits and Systems II: Express Briefs, vol. 69, no. 1, pp. 214-218, Jan. 2022

  16. arXiv:2011.13541  [pdf, other

    cond-mat.mes-hall nlin.PS

    Kinks in buckled graphene uncompressed and compressed in the longitudinal direction

    Authors: R. D. Yamaletdinov, Y. V. Pershin

    Abstract: In this Chapter we provide a review of the main results obtained in the modeling of graphene kinks and antikinks, which are elementary topological excitations of buckled graphene membranes. We introduce the classification of kinks, as well as discuss kink-antikink scattering, and radiation-kink interaction. We also report some new findings including i) the evidence that the kinetic energy of graph… ▽ More

    Submitted 21 January, 2022; v1 submitted 26 November, 2020; originally announced November 2020.

    Comments: To be published in Properties and Functionalization of Graphene, edited by Tandabany. D. & Hagelberg. F., Boston: Elsevier Inc (2021)

    Journal ref: in Theoretical and Computational Chemistry (Eds. T. Dinadayalane and F. Hagelberg) 21, 41-60 (2022)

  17. arXiv:2010.01313  [pdf, other

    physics.app-ph cs.ET

    The Fourier signatures of memristive hysteresis

    Authors: Y. V. Pershin, C. -C. Chien, M. Di Ventra

    Abstract: While resistors with memory, sometimes called memristive elements (such as ReRAM cells), are often studied under conditions of periodic driving, little attention has been paid to the Fourier features of their memory response (hysteresis). Here we demonstrate experimentally that the hysteresis of memristive systems can be unambiguously distinguished from the linear or non-linear response of systems… ▽ More

    Submitted 25 March, 2021; v1 submitted 3 October, 2020; originally announced October 2020.

    Journal ref: J. Phys. D: Appl. Phys. 54 245302 (2021)

  18. arXiv:2009.05189  [pdf, other

    cs.ET cond-mat.mes-hall

    Modeling networks of probabilistic memristors in SPICE

    Authors: V. J. Dowling, V. A. Slipko, Y. V. Pershin

    Abstract: Efficient simulation of probabilistic memristors and their networks requires novel modeling approaches. One major departure from the conventional memristor modeling is based on a master equation for the occupation probabilities of network states [arXiv:2003.11011 (2020)]. In the present article, we show how to implement such master equations in SPICE - a general-purpose circuit simulation program.… ▽ More

    Submitted 10 September, 2020; originally announced September 2020.

    Journal ref: Radioengineering 30(1), 157-163 (2021)

  19. arXiv:2003.11011  [pdf, other

    cs.ET cond-mat.mes-hall cond-mat.mtrl-sci

    Probabilistic Memristive Networks: Application of a Master Equation to Networks of Binary ReRAM cells

    Authors: V. J. Dowling, V. A. Slipko, Y. V. Pershin

    Abstract: The possibility of using non-deterministic circuit components has been gaining significant attention in recent years. The modeling and simulation of their circuits require novel approaches, as now the state of a circuit at an arbitrary moment in time cannot be precisely predicted. Generally, these circuits should be described in terms of probabilities, the circuit variables should be calculated on… ▽ More

    Submitted 4 December, 2020; v1 submitted 24 March, 2020; originally announced March 2020.

    Journal ref: Chaos, Solitons & Fractals, Volume 142, 110385 (2021)

  20. arXiv:1909.12464  [pdf, other

    cs.ET cond-mat.mes-hall

    Comment on "$Φ$ memristor: Real memristor found" by F. Z. Wang, L. Li, L. Shi, H. Wu, and L. O. Chua [J. Appl. Phys. 125, 054504 (2019)]

    Authors: Y. V. Pershin, M. Di Ventra

    Abstract: Wang et al. claim [J. Appl. Phys. 125, 054504 (2019)] that a current-carrying wire interacting with a magnetic core represents a memristor. Here, we demonstrate that this claim is false. We first show that such memristor "discovery" is based on incorrect physics, which does not even capture basic properties of magnetic core materials, such as their magnetic hysteresis. Moreover, the predictions of… ▽ More

    Submitted 15 January, 2021; v1 submitted 26 September, 2019; originally announced September 2019.

    Comments: Following this comment, the article [F. Z. Wang, L. Li, L. Shi, H. Wu, and L. O. Chua, J. Appl. Phys. 125, 054504 (2019)] was retracted from JAP on technical grounds. The retraction notice can be found at https://doi.org/10.1063/5.0040852

  21. A Demonstration of Implication Logic Based on Volatile (Diffusive) Memristors

    Authors: Y. V. Pershin

    Abstract: Implication logic gates that are based on volatile memristors are demonstrated experimentally with the use of relay-based volatile memristor emulators of an original design. The fabricated logic circuit involves two volatile memristors and it is capable of performing four fundamental logic functions (two types of material implication and the negations thereof). Moreover, current-voltage characteri… ▽ More

    Submitted 17 September, 2019; originally announced September 2019.

    Journal ref: IEEE Trans. on Circ. and Syst. II 66, 1033 (2019)

  22. arXiv:1909.07238  [pdf, other

    cond-mat.mes-hall cs.ET

    An experimental proof that resistance-switching memories are not memristors

    Authors: J. Kim, Y. V. Pershin, M. Yin, T. Datta, M. Di Ventra

    Abstract: It has been suggested that all resistive-switching memory cells are memristors. The latter are hypothetical, ideal devices whose resistance, as originally formulated, depends only on the net charge that traverses them. Recently, an unambiguous test has been proposed [J. Phys. D: Appl. Phys. {\bf 52}, 01LT01 (2019)] to determine whether a given physical system is indeed a memristor or not. Here, we… ▽ More

    Submitted 24 March, 2020; v1 submitted 16 September, 2019; originally announced September 2019.

    Journal ref: Advanced Electronic Materials 6, no. 7 (2020): 2000010

  23. arXiv:1906.01377  [pdf, other

    cs.ET cond-mat.mes-hall nlin.AO nlin.CD

    Bifurcation analysis of a TaO memristor model

    Authors: Y. V. Pershin, V. A. Slipko

    Abstract: This paper presents a study of bifurcation in the time-averaged dynamics of TaO memristors driven by narrow pulses of alternating polarities. The analysis, based on a physics-inspired model, focuses on the stable fixed points and on how these are affected by the pulse parameters. Our main finding is the identification of a driving regime when two stable fixed points exist simultaneously. To the be… ▽ More

    Submitted 4 June, 2019; originally announced June 2019.

    Journal ref: J. Phys. D: Appl. Phys. 52 505304 (2019)

  24. arXiv:1905.02254  [pdf, other

    cs.ET cond-mat.mes-hall

    Comment on "If it's pinched it's a memristor" by L. Chua [Semicond. Sci. Technol. 29, 104001 (2014)]

    Authors: Y. V. Pershin, M. Di Ventra

    Abstract: In his paper "If it's pinched it's a memristor" [Semicond. Sci. Technol. 29, 104001 (2014)] L. Chua claims to extend the notion of memristor to all two-terminal resistive devices that show a hysteresis loop pinched at the origin. He also states that memcapacitors and meminductors can be defined by a trivial replacement of symbols in the memristor relations, and, therefore, there should be a corres… ▽ More

    Submitted 6 May, 2019; originally announced May 2019.

    Journal ref: Semicond. Sci. Technol. 34, 098001 (2019)

  25. On the validity of memristor modeling in the neural network literature

    Authors: Y. V. Pershin, M. Di Ventra

    Abstract: An analysis of the literature shows that there are two types of non-memristive models that have been widely used in the modeling of so-called "memristive" neural networks. Here, we demonstrate that such models have nothing in common with the concept of memristive elements: they describe either non-linear resistors or certain bi-state systems, which all are devices without memory. Therefore, the re… ▽ More

    Submitted 18 April, 2019; originally announced April 2019.

    Journal ref: Neural Networks 121, 52 (2020)

  26. arXiv:1904.08142  [pdf, other

    cs.ET cond-mat.mes-hall

    Transient dynamics of pulse-driven memristors in the presence of a stable fixed point

    Authors: V. A. Slipko, Y. V. Pershin

    Abstract: Some memristors are quite interesting from the point of view of dynamical systems. When driven by narrow pulses of alternating polarities, their dynamics has a stable fixed point, which may be useful for future applications. We study the transient dynamics of two types of memristors characterized by a stable fixed point using a time-averaged evolution equation. Time-averaged trajectories of the Bi… ▽ More

    Submitted 17 April, 2019; originally announced April 2019.

  27. arXiv:1811.06649  [pdf, other

    cs.ET

    Importance of the window function choice for the predictive modelling of memristors

    Authors: V. A. Slipko, Y. V. Pershin

    Abstract: Window functions are widely employed in memristor models to restrict the changes of the internal state variables to specified intervals. Here we show that the actual choice of window function is of significant importance for the predictive modelling of memristors. Using a recently formulated theory of memristor attractors, we demonstrate that whether stable fixed points exist depends on the type o… ▽ More

    Submitted 11 February, 2019; v1 submitted 15 November, 2018; originally announced November 2018.

  28. arXiv:1808.07947  [pdf, other

    nlin.CD cond-mat.mes-hall nlin.AO

    Dynamical attractors of memristors and their networks

    Authors: Y. V. Pershin, V. A. Slipko

    Abstract: It is shown that the time-averaged dynamics of memristors and their networks periodically driven by alternating-polarity pulses may converge to fixed-point attractors. Starting with a general memristive system model, we derive basic equations describing the fixed-point attractors and investigate attractors in the dynamics of ideal, threshold-type and second-order memristors, and memristive network… ▽ More

    Submitted 6 February, 2019; v1 submitted 14 August, 2018; originally announced August 2018.

    Journal ref: Europhysics Letters 125, 20002 (2019)

  29. arXiv:1806.07360  [pdf, other

    cond-mat.mes-hall physics.app-ph

    A simple test for ideal memristors

    Authors: Y. V. Pershin, M. Di Ventra

    Abstract: An ideal memristor is defined as a resistor with memory that, when subject to a time-dependent current, $I(t)$, its resistance $R_M(q)$ depends {\it only} on the charge $q$ that has flowed through it, so that its voltage response is $V(t)=R_M(q)I(t)$. It has been argued that a clear fingerprint of these ideal memristors is a pinched hysteresis loop in their I-V curves. However, a pinched I-V hyste… ▽ More

    Submitted 25 September, 2018; v1 submitted 19 June, 2018; originally announced June 2018.

    Journal ref: J. Phys. D: Appl. Phys. 52, 01LT01 (2018)

  30. arXiv:1804.09219  [pdf, other

    cond-mat.mes-hall hep-th

    Manipulating graphene kinks through positive and negative radiation pressure effects

    Authors: R. D. Yamaletdinov, T. Romanczukiewicz, Y. V. Pershin

    Abstract: We introduce an idea of experimental verification of the counterintuitive negative radiation pressure effect in some classical field theories by means of buckled graphene. In this effect, a monochromatic plane wave interacting with topological solutions pulls these solutions towards the source of radiation. Using extensive molecular dynamics simulations, we investigate the traveling wave-induced m… ▽ More

    Submitted 18 September, 2018; v1 submitted 24 April, 2018; originally announced April 2018.

    Journal ref: Carbon 141, 253-257 (2019)

  31. arXiv:1711.09725  [pdf, other

    cond-mat.mes-hall

    Surface effects on ionic Coulomb blockade in nanometer-size pores

    Authors: Hiroya Tanaka, Hideo Iizuka, Yuriy V. Pershin, Massimiliano Di Ventra

    Abstract: Ionic Coulomb blockade in nanopores is a phenomenon that shares some similarities but also differences with its electronic counterpart. Here, we investigate extensively this phenomenon using all-atom molecular dynamics of ionic transport through nanopores of about one nanometer in diameter and up to several nanometers in length. Our goal is to better understand the role of atomic roughness and str… ▽ More

    Submitted 27 November, 2017; originally announced November 2017.

    Comments: Nanotechnology (in press)

    Journal ref: Nanotechnology 29, 025703 (2018 )

  32. arXiv:1708.04763  [pdf, other

    nlin.AO cond-mat.mes-hall

    Switching synchronization in 1-D memristive networks: An exact solution

    Authors: V. A. Slipko, Y. V. Pershin

    Abstract: We study a switching synchronization phenomenon taking place in one-dimensional memristive networks when the memristors switch from the high to low resistance state. It is assumed that the distributions of threshold voltages and switching rates of memristors are arbitrary. Using the Laplace transform, a set of non-linear equations describing the memristors dynamics is solved exactly, without any a… ▽ More

    Submitted 16 August, 2017; originally announced August 2017.

    Journal ref: Phys. Rev. E 96, 062213 (2017)

  33. arXiv:1707.07639  [pdf, other

    cond-mat.mes-hall cond-mat.soft

    Snap-through transition of graphene membranes for memcapacitor applications: A combined study using MD, DFT and elasticity theory

    Authors: R. D. Yamaletdinov, O. V. Ivakhnenko, O. V. Sedelnikova, S. N. Shevchenko, Y. V. Pershin

    Abstract: Using computational and theoretical approaches, we investigate the snap-through transition of buckled graphene membranes. Our main interest is related to the possibility of using the buckled membrane as a plate of capacitor with memory (memcapacitor). For this purpose, we performed molecular-dynamics (MD) simulations and elasticity theory calculations of the up-to-down and down-to-up snap-through… ▽ More

    Submitted 25 December, 2017; v1 submitted 24 July, 2017; originally announced July 2017.

    Journal ref: Scientific Reports 8, 3566 (2018)

  34. Kinks and antikinks of buckled graphene: A testing ground for phi^4 field model

    Authors: R. D. Yamaletdinov, V. A. Slipko, Y. V. Pershin

    Abstract: Kinks and antikinks of the classical phi^4 field model are topological solutions connecting its two distinct ground states. Here we establish an analogy between the excitations of a long graphene nanoribbon buckled in the transverse direction and phi^4 model results. Using molecular dynamics simulations, we investigated the dynamics of a buckled graphene nanoribbon with a single kink and with a… ▽ More

    Submitted 30 May, 2017; originally announced May 2017.

    Journal ref: Phys. Rev. B 96, 094306 (2017)

  35. arXiv:1611.08242  [pdf, other

    cond-mat.mes-hall cs.ET

    Computing with volatile memristors: An application of non-pinched hysteresis

    Authors: Y. V. Pershin, S. N. Shevchenko

    Abstract: The possibility of in-memory computing with volatile memristive devices, namely, memristors requiring a power source to sustain their memory, is demonstrated. We have adopted a hysteretic graphene-based field emission structure as a prototype of volatile memristor, which is characterized by a non-pinched hysteresis loop. Memristive model of the structure is developed and used to simulate a polymor… ▽ More

    Submitted 24 November, 2016; originally announced November 2016.

    Comments: 11 pages, 7 figures

    Journal ref: Nanotechnology 28, 075204 (2017)

  36. arXiv:1610.04152  [pdf, other

    cs.ET cond-mat.mes-hall

    Metastable Memristive Lines for Signal Transmission and Information Processing Applications

    Authors: V. A. Slipko, Y. V. Pershin

    Abstract: Traditional studies of memristive devices have mainly focused on their applications in non-volatile information storage and information processing. Here, we demonstrate that the third fundamental component of information technologies { the transfer of information { can also be employed with memristive devices. For this purpose, we introduce a metastable memristive circuit. Combining metastable mem… ▽ More

    Submitted 13 October, 2016; originally announced October 2016.

    Journal ref: Phys. Rev. E 95, 042213 (2017)

  37. arXiv:1603.06858  [pdf, other

    cond-mat.mes-hall cond-mat.mtrl-sci cond-mat.stat-mech

    The Theory of Spin Noise Spectroscopy: A Review

    Authors: N. A. Sinitsyn, Y. V. Pershin

    Abstract: Direct measurements of spin fluctuations are becoming the mainstream approach for studies of complex condensed matter, molecular, nuclear, and atomic systems. This review covers recent progress in the field of optical Spin Noise Spectroscopy (SNS) with an additional goal to establish an introduction into its theoretical foundations. Various theoretical techniques that have been recently used to in… ▽ More

    Submitted 15 August, 2016; v1 submitted 22 March, 2016; originally announced March 2016.

    Journal ref: Reports on Progress in Physics 79, 106501 (2016)

  38. Qubit-based memcapacitors and meminductors

    Authors: Sergey N. Shevchenko, Yuriy V. Pershin, Franco Nori

    Abstract: It is shown that superconducting charge and phase qubits are quantum versions of memory capacitive and inductive systems, respectively. We demonstrate that such quantum memcapacitive and meminductive devices offer remarkable and rich response functionalities. In particular, when subjected to periodic input, qubit-based memcapacitors and meminductors exhibit unusual hysteresis curves. Our work not… ▽ More

    Submitted 15 July, 2016; v1 submitted 23 February, 2016; originally announced February 2016.

    Comments: 12 pages, 9 figures

    Journal ref: Phys. Rev. Applied 6, 014006 (2016)

  39. arXiv:1601.04335  [pdf, other

    cond-mat.mes-hall

    Memristive model of hysteretic field emission from carbon nanotube arrays

    Authors: D. V. Gorodetskiy, A. V. Guselnikov, S. N. Shevchenko M. A. Kanygin, A. V. Okotrub, Y. V. Pershin

    Abstract: Some instances of electron field emitters are characterized by frequency-dependent hysteresis in their current-voltage characteristics. We argue that such emitters can be classified as memristive systems and introduce a general framework to describe their response. As a specific example of our approach, we consider field emission from a carbon nanotube array. Our experimental results demonstrate a… ▽ More

    Submitted 17 January, 2016; originally announced January 2016.

    Journal ref: J. Nanophoton. 10(1), 012524 (2016)

  40. arXiv:1512.08510  [pdf, other

    cond-mat.mes-hall

    Memristive Sisyphus circuit for clock signal generation

    Authors: Yuriy V. Pershin, Sergey N. Shevchenko, Franco Nori

    Abstract: Frequency generators are widely used in electronics. Here, we report the design and experimental realization of a memristive frequency generator employing a unique combination of only digital logic gates, a single-supply voltage and a realistic threshold-type memristive device. In our circuit, the oscillator frequency and duty cycle are defined by the switching characteristics of the memristive de… ▽ More

    Submitted 27 May, 2016; v1 submitted 28 December, 2015; originally announced December 2015.

    Comments: 7 pages, 4 figures

    Journal ref: Sci. Rep. 6, 26155 (2016)

  41. arXiv:1511.09267  [pdf, other

    cond-mat.mes-hall

    Reconfigurable Transmission Lines with Memcapacitive Materials

    Authors: Y. V. Pershin, V. A. Slipko, M. Di Ventra

    Abstract: We study transmission lines made of memory capacitive (memcapacitive) materials. The transmission properties of these lines can be adjusted on demand using an appropriate sequence of pulses. In particular, we demonstrate a pulse combination that creates a periodic modulation of dielectric properties along the line. Such a structure resembles a distributed Bragg reflector having important optical a… ▽ More

    Submitted 30 November, 2015; originally announced November 2015.

    Journal ref: Appl. Phys. Lett. 107, 253101 (2015)

  42. arXiv:1507.01640  [pdf, other

    cond-mat.mes-hall cond-mat.other

    Switching Synchronization in One-Dimensional Memristive Networks

    Authors: V. A. Slipko, M. Shumovskyi, Y. V. Pershin

    Abstract: We report on an astonishing switching synchronization phenomenon in one-dimensional memristive networks, which occurs when several memristive systems with different switching constants are switched from the high to low resistance state. Our numerical simulations show that such a collective behavior is especially pronounced when the applied voltage slightly exceeds the combined threshold voltage of… ▽ More

    Submitted 6 July, 2015; originally announced July 2015.

    Journal ref: Phys. Rev. E 92, 052917 (2015)

  43. arXiv:1503.04673  [pdf, other

    cs.ET cond-mat.mes-hall cs.NE

    A Memcomputing Pascaline

    Authors: Y. V. Pershin, L. K. Castelano, F. Hartmann, V. Lopez-Richard, M. Di Ventra

    Abstract: The original Pascaline was a mechanical calculator able to sum and subtract integers. It encodes information in the angles of mechanical wheels and through a set of gears, and aided by gravity, could perform the calculations. Here, we show that such a concept can be realized in electronics using memory elements such as memristive systems. By using memristive emulators we have demonstrated experime… ▽ More

    Submitted 16 March, 2015; originally announced March 2015.

    Journal ref: IEEE Trans. Circ. Syst. II 63, 558 (2016)

  44. arXiv:1410.3541  [pdf, other

    cs.ET cond-mat.mes-hall cs.NE

    Memcomputing with membrane memcapacitive systems

    Authors: Yuriy V. Pershin, Fabio L. Traversa, Massimiliano Di Ventra

    Abstract: We show theoretically that networks of membrane memcapacitive systems -- capacitors with memory made out of membrane materials -- can be used to perform a complete set of logic gates in a massively parallel way by simply changing the external input amplitudes, but not the topology of the network. This polymorphism is an important characteristic of memcomputing (computing with memories) that closel… ▽ More

    Submitted 7 July, 2015; v1 submitted 13 October, 2014; originally announced October 2014.

    Journal ref: Nanotechnology, vol. 26, page 225201 (9 pp), year 2015

  45. arXiv:1408.6741  [pdf, other

    cs.NE cond-mat.mes-hall cs.ET

    Memcomputing and Swarm Intelligence

    Authors: Y. V. Pershin, M. Di Ventra

    Abstract: We explore the relation between memcomputing, namely computing with and in memory, and swarm intelligence algorithms. In particular, we show that one can design memristive networks to solve short-path optimization problems that can also be solved by ant-colony algorithms. By employing appropriate memristive elements one can demonstrate an almost one-to-one correspondence between memcomputing and a… ▽ More

    Submitted 28 August, 2014; originally announced August 2014.

  46. Hybrid Spin Noise Spectroscopy and the Spin Hall Effect

    Authors: V. A. Slipko, N. A. Sinitsyn, Y. V. Pershin

    Abstract: Here we suggest a novel hybrid spin noise spectroscopy technique, which is sensitive to the spin Hall effect. It is shown that, while the standard spin-spin correlation function is not sensitive to the spin Hall effect, spin-transverse voltage and transverse voltage-voltage correlation functions provide the missing sensitivity being linear and quadratic in the spin Hall coefficient, respectively.… ▽ More

    Submitted 2 August, 2013; originally announced August 2013.

    Journal ref: Phys. Rev. B 88, 201102(R) (2013)

  47. arXiv:1307.6921  [pdf, other

    cond-mat.dis-nn cs.ET cs.NE q-bio.NC

    Memcapacitive neural networks

    Authors: Y. V. Pershin, M. Di Ventra

    Abstract: We show that memcapacitive (memory capacitive) systems can be used as synapses in artificial neural networks. As an example of our approach, we discuss the architecture of an integrate-and-fire neural network based on memcapacitive synapses. Moreover, we demonstrate that the spike-timing-dependent plasticity can be simply realized with some of these devices. Memcapacitive synapses are a low-energy… ▽ More

    Submitted 26 July, 2013; originally announced July 2013.

    Journal ref: Electronics Letters 50, 141 (2014)

  48. Nonequilibrium spin noise spectroscopy

    Authors: Fuxiang Li, Yuriy V. Pershin, Valeriy A. Slipko, Nikolai A. Sinitsyn

    Abstract: Spin Noise Spectroscopy (SNS) is an experimental approach to obtain correlators of mesoscopic spin fluctuations in time by purely optical means. We explore the information that this technique can provide when it is applied to a weakly non-equilibrium regime when an electric current is driven through a sample by an electric field. We find that the noise power spectrum of conducting electrons experi… ▽ More

    Submitted 16 July, 2013; originally announced July 2013.

    Comments: 5 pages, 2 figures

    Journal ref: Phys. Rev. Lett. 111, 067201 (2013)

  49. arXiv:1307.2717  [pdf, other

    physics.comp-ph cond-mat.mes-hall

    Reliable SPICE Simulations of Memristors, Memcapacitors and Meminductors

    Authors: D. Biolek, M. Di Ventra, Y. V. Pershin

    Abstract: Memory circuit elements, namely memristive, memcapacitive and meminductive systems, are gaining considerable attention due to their ubiquity and use in diverse areas of science and technology. Their modeling within the most widely used environment, SPICE, is thus critical to make substantial progress in the design and analysis of complex circuits. Here, we present a collection of models of differe… ▽ More

    Submitted 10 July, 2013; originally announced July 2013.

    Journal ref: Radioengineering 22, 945 (2013)

  50. arXiv:1306.6133  [pdf, other

    cs.ET cond-mat.mes-hall cs.AR

    Dynamic Computing Random Access Memory

    Authors: Fabio Lorenzo Traversa, Fabrizio Bonani, Yuriy V. Pershin, Massimiliano Di Ventra

    Abstract: The present von Neumann computing paradigm involves a significant amount of information transfer between a central processing unit (CPU) and memory, with concomitant limitations in the actual execution speed. However, it has been recently argued that a different form of computation, dubbed memcomputing [Nature Physics, 9, 200-202 (2013)] and inspired by the operation of our brain, can resolve the… ▽ More

    Submitted 17 March, 2014; v1 submitted 26 June, 2013; originally announced June 2013.

    Journal ref: Nanotechnology, vol. 25, is. 8, pg. 285201 (10pp), year 2014