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Fully parallel implementation of digital memcomputing on FPGA
Authors:
Dyk Chung Nguyen,
Yuriy V. Pershin
Abstract:
We present a fully parallel digital memcomputing solver implemented on a field-programmable gate array (FPGA) board. For this purpose, we have designed an FPGA code that solves the ordinary differential equations associated with digital memcomputing in parallel. A feature of the code is the use of only integer-type variables and integer constants to enhance optimization. Consequently, each integra…
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We present a fully parallel digital memcomputing solver implemented on a field-programmable gate array (FPGA) board. For this purpose, we have designed an FPGA code that solves the ordinary differential equations associated with digital memcomputing in parallel. A feature of the code is the use of only integer-type variables and integer constants to enhance optimization. Consequently, each integration step in our solver is executed in 96~ns. This method was utilized for difficult instances of the Boolean satisfiability (SAT) problem close to a phase transition, involving up to about 150 variables. Our results demonstrate that the parallel implementation reduces the scaling exponent by about 1 compared to a sequential C++ code on a standard computer. Additionally, compared to C++ code, we observed a time-to-solution advantage of about three orders of magnitude. Given the limitations of FPGA resources, the current implementation of digital memcomputing will be especially useful for solving compact but challenging problems.
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Submitted 23 May, 2024;
originally announced May 2024.
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Reduction of Joule Losses in Memristive Switching Using Optimal Control
Authors:
Valeriy A. Slipko,
Yuriy V. Pershin
Abstract:
Electricity production from fossil fuels is among the main contributors to global warming. To suppress climate change, energy-efficient systems, devices, and technologies must be implemented. This study investigates strategies for minimizing Joule losses in resistive random access memory (ReRAM) cells, which are also referred to as memristive devices. The basic question that we ask is what is the…
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Electricity production from fossil fuels is among the main contributors to global warming. To suppress climate change, energy-efficient systems, devices, and technologies must be implemented. This study investigates strategies for minimizing Joule losses in resistive random access memory (ReRAM) cells, which are also referred to as memristive devices. The basic question that we ask is what is the optimal driving protocol to switch a memristive device from one state to another. In the case of ideal memristors, in the most basic scenario, the optimal protocol is determined by solving a variational problem without constraints with the help of the Euler-Lagrange equation. In the case of memristive systems, for the same situation, the optimal protocol is found using the method of Lagrange multipliers. We demonstrate the advantages of our approaches through specific examples and compare our results with those of switching with constant voltage or current. Our findings suggest that voltage or current control can be used to reduce Joule losses in emerging memory devices.
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Submitted 25 May, 2024; v1 submitted 1 April, 2024;
originally announced April 2024.
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Acceleration of digital memcomputing by jumps
Authors:
Yuriy V. Pershin
Abstract:
In this article, we present the potential benefits of incorporating jumps into the dynamics of digital memcomputing machines (DMMs), which have been developed to address complex optimization problems. We illustrate the potential speed improvement of a DMM solver with jumps over an unmodified DMM solver by solving Boolean satisfiability (SAT) problems of different complicatedness. Our findings sugg…
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In this article, we present the potential benefits of incorporating jumps into the dynamics of digital memcomputing machines (DMMs), which have been developed to address complex optimization problems. We illustrate the potential speed improvement of a DMM solver with jumps over an unmodified DMM solver by solving Boolean satisfiability (SAT) problems of different complicatedness. Our findings suggest that jumps can modify scaling exponents and improve solving times by up to 75 %. Interestingly, the advantages of jumps can be seen in cases where the size of the jump is so large that otherwise the continuous dynamics of voltage variables becomes almost binary.
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Submitted 3 March, 2024;
originally announced March 2024.
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SPICE Modeling of Memcomputing Logic Gates
Authors:
Y. V. Pershin
Abstract:
Memcomputing logic gates generalize the traditional Boolean logic gates for operation in the reverse direction. According to the literature, this functionality enables the efficient solution of computationally-intensive problems including factorization and NP-complete problems. To approach the deployment of memcomputing gates in hardware, this paper introduces SPICE models of memcomputing logic ga…
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Memcomputing logic gates generalize the traditional Boolean logic gates for operation in the reverse direction. According to the literature, this functionality enables the efficient solution of computationally-intensive problems including factorization and NP-complete problems. To approach the deployment of memcomputing gates in hardware, this paper introduces SPICE models of memcomputing logic gates following their original definition. Using these models, we demonstrate the behavior of single gates as well as small self-organizing circuits. We also correct some inconsistencies in the prior literature. Importantly, the correct schematics of dynamic correction module is reported here for the first time. Our work makes memcomputing more accessible to those who are interested in this emerging computing technology.
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Submitted 26 July, 2023;
originally announced July 2023.
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Hardware implementation of digital memcomputing on small-size FPGAs
Authors:
Dyk Chung Nguyen,
Yuan-Hang Zhang,
Massimiliano Di Ventra,
Yuriy V. Pershin
Abstract:
Memcomputing is a novel computing paradigm beyond the von-Neumann one. Its digital version is designed for the efficient solution of combinatorial optimization problems, which emerge in various fields of science and technology. Previously, the performance of digital memcomputing machines (DMMs) was demonstrated using software simulations of their ordinary differential equations. Here, we present t…
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Memcomputing is a novel computing paradigm beyond the von-Neumann one. Its digital version is designed for the efficient solution of combinatorial optimization problems, which emerge in various fields of science and technology. Previously, the performance of digital memcomputing machines (DMMs) was demonstrated using software simulations of their ordinary differential equations. Here, we present the first hardware realization of a DMM algorithm on a low-cost FPGA board. In this demonstration, we have implemented a Boolean satisfiability problem solver. To optimize the use of hardware resources, the algorithm was partially parallelized. The scalability of the present implementation is explored and our FPGA-based results are compared to those obtained using a python code running on a traditional (von-Neumann) computer, showing one to two orders of magnitude speed-up in time to solution. This initial small-scale implementation is projected to state-of-the-art FPGA boards anticipating further advantages of the hardware realization of DMMs over their software emulation.
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Submitted 1 May, 2023;
originally announced May 2023.
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Electromechanical memcapacitive neurons for energy-efficient spiking neural networks
Authors:
Zixi Zhang,
Yuriy V. Pershin,
Ivar Martin
Abstract:
In this article, we introduce a new nanoscale electromechanical device -- a leaky memcapacitor -- and show that it may be useful for the hardware implementation of spiking neurons. The leaky memcapacitor is a movable-plate capacitor that becomes quite conductive when the plates come close to each other. The equivalent circuit of the leaky memcapacitor involves a memcapacitive and memristive system…
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In this article, we introduce a new nanoscale electromechanical device -- a leaky memcapacitor -- and show that it may be useful for the hardware implementation of spiking neurons. The leaky memcapacitor is a movable-plate capacitor that becomes quite conductive when the plates come close to each other. The equivalent circuit of the leaky memcapacitor involves a memcapacitive and memristive system connected in parallel. In the leaky memcapacitor, the resistance and capacitance depend on the same internal state variable, which is the displacement of the movable plate. We have performed a comprehensive analysis showing that several spiking types observed in biological neurons can be implemented with the leaky memcapacitor. Significant attention is paid to the dynamic properties of the model. As in leaky memcapacitors the capacitive and leaking resistive functionalities are implemented naturally within the same device structure, their use will simplify the creation of spiking neural networks.
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Submitted 21 April, 2023;
originally announced April 2023.
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A probabilistic model of resistance jumps in memristive devices
Authors:
V. A. Slipko,
Y. V. Pershin
Abstract:
Resistance switching memory cells such as electrochemical metallization cells and valence change mechanism cells have the potential to revolutionize information processing and storage. However, the creation of deterministic resistance switching devices is a challenging problem that is still open. At present, the modeling of resistance switching cells is dominantly based on deterministic models tha…
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Resistance switching memory cells such as electrochemical metallization cells and valence change mechanism cells have the potential to revolutionize information processing and storage. However, the creation of deterministic resistance switching devices is a challenging problem that is still open. At present, the modeling of resistance switching cells is dominantly based on deterministic models that fail to capture the cycle-to-cycle variability intrinsic to these devices. Herewith we introduce a state probability distribution function and associated integro-differential equation to describe the switching process consisting of a set of stochastic jumps. Numerical and analytical solutions of the equation have been found in two model cases. This work expands the toolbox of models available for resistance switching cells and related devices, and enables a rigorous description of intrinsic physical behavior not available in other models.
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Submitted 6 February, 2023;
originally announced February 2023.
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Roadmap for Unconventional Computing with Nanotechnology
Authors:
Giovanni Finocchio,
Jean Anne C. Incorvia,
Joseph S. Friedman,
Qu Yang,
Anna Giordano,
Julie Grollier,
Hyunsoo Yang,
Florin Ciubotaru,
Andrii Chumak,
Azad J. Naeemi,
Sorin D. Cotofana,
Riccardo Tomasello,
Christos Panagopoulos,
Mario Carpentieri,
Peng Lin,
Gang Pan,
J. Joshua Yang,
Aida Todri-Sanial,
Gabriele Boschetto,
Kremena Makasheva,
Vinod K. Sangwan,
Amit Ranjan Trivedi,
Mark C. Hersam,
Kerem Y. Camsari,
Peter L. McMahon
, et al. (26 additional authors not shown)
Abstract:
In the "Beyond Moore's Law" era, with increasing edge intelligence, domain-specific computing embracing unconventional approaches will become increasingly prevalent. At the same time, adopting a variety of nanotechnologies will offer benefits in energy cost, computational speed, reduced footprint, cyber resilience, and processing power. The time is ripe for a roadmap for unconventional computing w…
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In the "Beyond Moore's Law" era, with increasing edge intelligence, domain-specific computing embracing unconventional approaches will become increasingly prevalent. At the same time, adopting a variety of nanotechnologies will offer benefits in energy cost, computational speed, reduced footprint, cyber resilience, and processing power. The time is ripe for a roadmap for unconventional computing with nanotechnologies to guide future research, and this collection aims to fill that need. The authors provide a comprehensive roadmap for neuromorphic computing using electron spins, memristive devices, two-dimensional nanomaterials, nanomagnets, and various dynamical systems. They also address other paradigms such as Ising machines, Bayesian inference engines, probabilistic computing with p-bits, processing in memory, quantum memories and algorithms, computing with skyrmions and spin waves, and brain-inspired computing for incremental learning and problem-solving in severely resource-constrained environments. These approaches have advantages over traditional Boolean computing based on von Neumann architecture. As the computational requirements for artificial intelligence grow 50 times faster than Moore's Law for electronics, more unconventional approaches to computing and signal processing will appear on the horizon, and this roadmap will help identify future needs and challenges. In a very fertile field, experts in the field aim to present some of the dominant and most promising technologies for unconventional computing that will be around for some time to come. Within a holistic approach, the goal is to provide pathways for solidifying the field and guiding future impactful discoveries.
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Submitted 27 February, 2024; v1 submitted 17 January, 2023;
originally announced January 2023.
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Memristive Ising Circuits
Authors:
V. J. Dowling,
Y. V. Pershin
Abstract:
The Ising model is of prime importance in the field of statistical mechanics. Here we show that Ising-type interactions can be realized in periodically-driven circuits of stochastic binary resistors with memory. A key feature of our realization is the simultaneous co-existence of ferromagnetic and antiferromagnetic interactions between two neighboring spins -- an extraordinary property not availab…
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The Ising model is of prime importance in the field of statistical mechanics. Here we show that Ising-type interactions can be realized in periodically-driven circuits of stochastic binary resistors with memory. A key feature of our realization is the simultaneous co-existence of ferromagnetic and antiferromagnetic interactions between two neighboring spins -- an extraordinary property not available in nature. We demonstrate that the statistics of circuit states may perfectly match the ones found in the Ising model with ferromagnetic or antiferromagnetic interactions, and, importantly, the corresponding Ising model parameters can be extracted from the probabilities of circuit states. Using this finding, the Ising Hamiltonian is re-constructed in several model cases, and it is shown that different types of interaction can be realized in circuits of stochastic memristors.
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Submitted 9 October, 2022;
originally announced October 2022.
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Analytic and SPICE modeling of stochastic ReRAM circuits
Authors:
V. J. Dowling,
V. A. Slipko,
Y. V. Pershin
Abstract:
The modeling of conventional (deterministic) electronic circuits - ones consisting of transistors, resistors, capacitors, inductors, and other traditional electronic components - is a well-established subject. The cycle-to-cycle variability of emerging electronic devices, in particular, certain ReRAM cells, has led to the concept of stochastic circuits. Unfortunately, even in relatively simple cas…
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The modeling of conventional (deterministic) electronic circuits - ones consisting of transistors, resistors, capacitors, inductors, and other traditional electronic components - is a well-established subject. The cycle-to-cycle variability of emerging electronic devices, in particular, certain ReRAM cells, has led to the concept of stochastic circuits. Unfortunately, even in relatively simple cases, the direct transient analysis of stochastic circuits is computationally demanding and potentially impractical, if possible at all. An important development in this area has been the application of a master equation that is easily implemented in SPICE. In this conference paper, we briefly review the master equation approach and present an improved implementation of this approach in SPICE. Moreover, we find an attractor state in a periodically driven memristive circuit - a stochastic counterpart of deterministic memristor attractors.
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Submitted 25 January, 2022;
originally announced January 2022.
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Holy memristor
Authors:
J. Kim,
V. J. Dowling,
T. Datta,
Y. V. Pershin
Abstract:
It was recently shown that when a drop of Glenlivet whiskey evaporates, it leaves behind a uniform deposit [PRL 116, 124501 (2016)]. We utilize this fascinating finding in the fabrication of electrochemical metallization memory (ECM) cells. The top (Ag) and bottom (Co) electrodes in our structure are separated by a layer of Glenlivet whiskey deposit (an insulator). Measurements show the device res…
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It was recently shown that when a drop of Glenlivet whiskey evaporates, it leaves behind a uniform deposit [PRL 116, 124501 (2016)]. We utilize this fascinating finding in the fabrication of electrochemical metallization memory (ECM) cells. The top (Ag) and bottom (Co) electrodes in our structure are separated by a layer of Glenlivet whiskey deposit (an insulator). Measurements show the device response is typical of ECM cells that involve threshold-type switching, pinched hysteresis loops, and a large difference between the high- and low-resistance states. The surface coating process used in our experiments simplifies the device fabrication and results in a biodegradable insulating layer, which may facilitate the recovery of recyclable materials at the end of the device's use.
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Submitted 5 May, 2022; v1 submitted 22 November, 2021;
originally announced November 2021.
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Custodial chiral symmetry in a Su-Schrieffer-Heeger electrical circuit with memory
Authors:
Massimiliano Di Ventra,
Yuriy V. Pershin,
Chih-Chun Chien
Abstract:
Custodial symmetries are common in the Standard Model of particle physics. They arise when quantum corrections to a parameter are proportional to the parameter itself. Here, we show that a custodial symmetry of the chiral type is also present in a classical Su-Schrieffer-Heeger (SSH) electrical circuit with memory (memcircuit). In the absence of memory, the SSH circuit supports a symmetry-protecte…
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Custodial symmetries are common in the Standard Model of particle physics. They arise when quantum corrections to a parameter are proportional to the parameter itself. Here, we show that a custodial symmetry of the chiral type is also present in a classical Su-Schrieffer-Heeger (SSH) electrical circuit with memory (memcircuit). In the absence of memory, the SSH circuit supports a symmetry-protected topological edge state. Memory induces nonlinearities that break chiral symmetry explicitly and spreads the state across the circuit. However, the resulting state is still protected against perturbations by the ensuing custodial chiral symmetry. These predictions can be verified experimentally and demonstrate the interplay between symmetry and memory.
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Submitted 4 March, 2022; v1 submitted 8 September, 2021;
originally announced September 2021.
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An experimental demonstration of the memristor test
Authors:
Y. V. Pershin,
J. Kim,
T. Datta,
M. Di Ventra
Abstract:
A simple and unambiguous test has been recently suggested [J. Phys. D: Applied Physics, 52, 01LT01 (2018)] to check experimentally if a resistor with memory is indeed a memristor, namely a resistor whose resistance depends only on the charge that flows through it, or on the history of the voltage across it. However, although such a test would represent the litmus test for claims about memristors (…
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A simple and unambiguous test has been recently suggested [J. Phys. D: Applied Physics, 52, 01LT01 (2018)] to check experimentally if a resistor with memory is indeed a memristor, namely a resistor whose resistance depends only on the charge that flows through it, or on the history of the voltage across it. However, although such a test would represent the litmus test for claims about memristors (in the ideal sense), it has yet to be applied widely to actual physical devices. In this paper, we experimentally apply it to a current-carrying wire interacting with a magnetic core, which was recently claimed to be a memristor (so-called `$Φ$ memristor') [J. Appl. Phys. 125, 054504 (2019)]. The results of our experiment demonstrate unambiguously that this `$Φ$ memristor' is not a memristor: it is simply an inductor with memory. This demonstration casts further doubts that ideal memristors do actually exist in nature or may be easily created in the lab.
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Submitted 23 February, 2021;
originally announced February 2021.
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The influence of constriction on the motion of graphene kinks
Authors:
D. C. Nguyen,
R. D. Yamaletdinov,
Y. V. Pershin
Abstract:
Graphene kinks are topological states of buckled graphene membranes. We show that when a moving kink encounters a constriction, there are three general classes of behavior: reflection, trap**, and transmission. Overall, constriction is characterized by an attractive potential. In the case of a simple symmetric constriction, the kink potential energy has a relatively deep minimum surrounded by en…
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Graphene kinks are topological states of buckled graphene membranes. We show that when a moving kink encounters a constriction, there are three general classes of behavior: reflection, trap**, and transmission. Overall, constriction is characterized by an attractive potential. In the case of a simple symmetric constriction, the kink potential energy has a relatively deep minimum surrounded by energy barriers. However, the potential energy alone does not fully define the class of behavior: the effect of a resonant reflection was observed in our simulations. Moreover, we demonstrate that asymmetric constrictions can transform kinks from one type into another. MD simulation results are compared with predictions of the classical $φ^4$ model.
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Submitted 10 April, 2021; v1 submitted 16 February, 2021;
originally announced February 2021.
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Theory of heterogeneous circuits with stochastic memristive devices
Authors:
V. A. Slipko,
Y. V. Pershin
Abstract:
We introduce an approach based on the Chapman-Kolmogorov equation to model heterogeneous stochastic circuits, namely, the circuits combining binary or multi-state stochastic memristive devices and continuum reactive components (capacitors and/or inductors). Such circuits are described in terms of occupation probabilities of memristive states that are functions of reactive variables. As an illustra…
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We introduce an approach based on the Chapman-Kolmogorov equation to model heterogeneous stochastic circuits, namely, the circuits combining binary or multi-state stochastic memristive devices and continuum reactive components (capacitors and/or inductors). Such circuits are described in terms of occupation probabilities of memristive states that are functions of reactive variables. As an illustrative example, the series circuit of a binary memristor and capacitor is considered in detail. Some analytical solutions are found. Our work offers a novel analytical/numerical tool for modeling complex stochastic networks, which may find a broad range of applications.
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Submitted 29 January, 2021; v1 submitted 28 January, 2021;
originally announced January 2021.
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Kinks in buckled graphene uncompressed and compressed in the longitudinal direction
Authors:
R. D. Yamaletdinov,
Y. V. Pershin
Abstract:
In this Chapter we provide a review of the main results obtained in the modeling of graphene kinks and antikinks, which are elementary topological excitations of buckled graphene membranes. We introduce the classification of kinks, as well as discuss kink-antikink scattering, and radiation-kink interaction. We also report some new findings including i) the evidence that the kinetic energy of graph…
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In this Chapter we provide a review of the main results obtained in the modeling of graphene kinks and antikinks, which are elementary topological excitations of buckled graphene membranes. We introduce the classification of kinks, as well as discuss kink-antikink scattering, and radiation-kink interaction. We also report some new findings including i) the evidence that the kinetic energy of graphene kinks is described by a relativistic expression, and ii) demonstration of damped dynamics of kinks in membranes compressed in the longitudinal direction. Special attention is paid to highlight the similarities and differences between the graphene kinks and kinks in the classical scalar $φ^4$ theory. The unique properties of graphene kinks discussed in this Chapter may find applications in nanoscale motion.
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Submitted 21 January, 2022; v1 submitted 26 November, 2020;
originally announced November 2020.
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The Fourier signatures of memristive hysteresis
Authors:
Y. V. Pershin,
C. -C. Chien,
M. Di Ventra
Abstract:
While resistors with memory, sometimes called memristive elements (such as ReRAM cells), are often studied under conditions of periodic driving, little attention has been paid to the Fourier features of their memory response (hysteresis). Here we demonstrate experimentally that the hysteresis of memristive systems can be unambiguously distinguished from the linear or non-linear response of systems…
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While resistors with memory, sometimes called memristive elements (such as ReRAM cells), are often studied under conditions of periodic driving, little attention has been paid to the Fourier features of their memory response (hysteresis). Here we demonstrate experimentally that the hysteresis of memristive systems can be unambiguously distinguished from the linear or non-linear response of systems without hysteresis by the values of certain Fourier series coefficients. We also show that the Fourier series convergence depends on driving conditions, and introduce a measure of hysteresis. These results may be used to quantify the memory content of resistive memories, and tune their Fourier spectrum according to the excitation signal.
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Submitted 25 March, 2021; v1 submitted 3 October, 2020;
originally announced October 2020.
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Modeling networks of probabilistic memristors in SPICE
Authors:
V. J. Dowling,
V. A. Slipko,
Y. V. Pershin
Abstract:
Efficient simulation of probabilistic memristors and their networks requires novel modeling approaches. One major departure from the conventional memristor modeling is based on a master equation for the occupation probabilities of network states [arXiv:2003.11011 (2020)]. In the present article, we show how to implement such master equations in SPICE - a general-purpose circuit simulation program.…
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Efficient simulation of probabilistic memristors and their networks requires novel modeling approaches. One major departure from the conventional memristor modeling is based on a master equation for the occupation probabilities of network states [arXiv:2003.11011 (2020)]. In the present article, we show how to implement such master equations in SPICE - a general-purpose circuit simulation program. In the case studies, we simulate the dynamics of ac-driven probabilistic binary and multi-state memristors, and dc-driven networks of probabilistic binary and multi-state memristors. Our SPICE results are in perfect agreement with known analytical solutions. Examples of LTspice codes are included.
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Submitted 10 September, 2020;
originally announced September 2020.
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Probabilistic Memristive Networks: Application of a Master Equation to Networks of Binary ReRAM cells
Authors:
V. J. Dowling,
V. A. Slipko,
Y. V. Pershin
Abstract:
The possibility of using non-deterministic circuit components has been gaining significant attention in recent years. The modeling and simulation of their circuits require novel approaches, as now the state of a circuit at an arbitrary moment in time cannot be precisely predicted. Generally, these circuits should be described in terms of probabilities, the circuit variables should be calculated on…
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The possibility of using non-deterministic circuit components has been gaining significant attention in recent years. The modeling and simulation of their circuits require novel approaches, as now the state of a circuit at an arbitrary moment in time cannot be precisely predicted. Generally, these circuits should be described in terms of probabilities, the circuit variables should be calculated on average, and correlation functions should be used to explore interrelations among the variables. In this paper, we use, for the first time, a master equation to analyze the networks composed of probabilistic binary memristors. Analytical solutions of the master equation for the case of identical memristors connected in-series and in-parallel are found. Our analytical results are supplemented by results of numerical simulations that extend our findings beyond the case of identical memristors. The approach proposed in this paper facilitates the development of probabilistic/stochastic electronic circuits and advance their real-world applications.
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Submitted 4 December, 2020; v1 submitted 24 March, 2020;
originally announced March 2020.
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Comment on "$Φ$ memristor: Real memristor found" by F. Z. Wang, L. Li, L. Shi, H. Wu, and L. O. Chua [J. Appl. Phys. 125, 054504 (2019)]
Authors:
Y. V. Pershin,
M. Di Ventra
Abstract:
Wang et al. claim [J. Appl. Phys. 125, 054504 (2019)] that a current-carrying wire interacting with a magnetic core represents a memristor. Here, we demonstrate that this claim is false. We first show that such memristor "discovery" is based on incorrect physics, which does not even capture basic properties of magnetic core materials, such as their magnetic hysteresis. Moreover, the predictions of…
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Wang et al. claim [J. Appl. Phys. 125, 054504 (2019)] that a current-carrying wire interacting with a magnetic core represents a memristor. Here, we demonstrate that this claim is false. We first show that such memristor "discovery" is based on incorrect physics, which does not even capture basic properties of magnetic core materials, such as their magnetic hysteresis. Moreover, the predictions of Wang et al.'s model contradict the experimental curves presented in their paper. Additionally, the theoretical pinched hysteresis loops presented by Wang et al. can not be reproduced if their model is used, and there are serious flaws in their "negative memristor" emulator design. Finally, a simple gedanken experiment shows that the proposed $Φ$-memristor would fail the memristor test we recently suggested in J. Phys. D: Appl. Phys. 52, 01LT01 (2019). The device "discovered" by Wang et al. is just an inductor with memory.
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Submitted 15 January, 2021; v1 submitted 26 September, 2019;
originally announced September 2019.
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A Demonstration of Implication Logic Based on Volatile (Diffusive) Memristors
Authors:
Y. V. Pershin
Abstract:
Implication logic gates that are based on volatile memristors are demonstrated experimentally with the use of relay-based volatile memristor emulators of an original design. The fabricated logic circuit involves two volatile memristors and it is capable of performing four fundamental logic functions (two types of material implication and the negations thereof). Moreover, current-voltage characteri…
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Implication logic gates that are based on volatile memristors are demonstrated experimentally with the use of relay-based volatile memristor emulators of an original design. The fabricated logic circuit involves two volatile memristors and it is capable of performing four fundamental logic functions (two types of material implication and the negations thereof). Moreover, current-voltage characteristics of individual emulators are recorded and self-sustained oscillations in a resistor-volatile memristor circuit are found. The developed emulator offers a great potential for memristive circuit experiments because of its simplicity, similarity of response with volatile memristors, and low cost. Our findings, which are based on emulators, can easily be reproduced with physical volatile memristors and, thus, open up possibilities for emerging in-memory computing architectures.
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Submitted 17 September, 2019;
originally announced September 2019.
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An experimental proof that resistance-switching memories are not memristors
Authors:
J. Kim,
Y. V. Pershin,
M. Yin,
T. Datta,
M. Di Ventra
Abstract:
It has been suggested that all resistive-switching memory cells are memristors. The latter are hypothetical, ideal devices whose resistance, as originally formulated, depends only on the net charge that traverses them. Recently, an unambiguous test has been proposed [J. Phys. D: Appl. Phys. {\bf 52}, 01LT01 (2019)] to determine whether a given physical system is indeed a memristor or not. Here, we…
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It has been suggested that all resistive-switching memory cells are memristors. The latter are hypothetical, ideal devices whose resistance, as originally formulated, depends only on the net charge that traverses them. Recently, an unambiguous test has been proposed [J. Phys. D: Appl. Phys. {\bf 52}, 01LT01 (2019)] to determine whether a given physical system is indeed a memristor or not. Here, we experimentally apply such a test to both in-house fabricated Cu-SiO2 and commercially available electrochemical metallization cells. Our results unambiguously show that electrochemical metallization memory cells are not memristors. Since the particular resistance-switching memories employed in our study share similar features with many other memory cells, our findings refute the claim that all resistance-switching memories are memristors. They also cast doubts on the existence of ideal memristors as actual physical devices that can be fabricated experimentally. Our results then lead us to formulate two memristor impossibility conjectures regarding the impossibility of building a model of physical resistance-switching memories based on the memristor model.
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Submitted 24 March, 2020; v1 submitted 16 September, 2019;
originally announced September 2019.
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Bifurcation analysis of a TaO memristor model
Authors:
Y. V. Pershin,
V. A. Slipko
Abstract:
This paper presents a study of bifurcation in the time-averaged dynamics of TaO memristors driven by narrow pulses of alternating polarities. The analysis, based on a physics-inspired model, focuses on the stable fixed points and on how these are affected by the pulse parameters. Our main finding is the identification of a driving regime when two stable fixed points exist simultaneously. To the be…
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This paper presents a study of bifurcation in the time-averaged dynamics of TaO memristors driven by narrow pulses of alternating polarities. The analysis, based on a physics-inspired model, focuses on the stable fixed points and on how these are affected by the pulse parameters. Our main finding is the identification of a driving regime when two stable fixed points exist simultaneously. To the best of our knowledge, such bistability is identified in a single memristor for the first time. This result can be readily tested experimentally, and is expected to be useful in future memristor circuit designs.
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Submitted 4 June, 2019;
originally announced June 2019.
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Comment on "If it's pinched it's a memristor" by L. Chua [Semicond. Sci. Technol. 29, 104001 (2014)]
Authors:
Y. V. Pershin,
M. Di Ventra
Abstract:
In his paper "If it's pinched it's a memristor" [Semicond. Sci. Technol. 29, 104001 (2014)] L. Chua claims to extend the notion of memristor to all two-terminal resistive devices that show a hysteresis loop pinched at the origin. He also states that memcapacitors and meminductors can be defined by a trivial replacement of symbols in the memristor relations, and, therefore, there should be a corres…
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In his paper "If it's pinched it's a memristor" [Semicond. Sci. Technol. 29, 104001 (2014)] L. Chua claims to extend the notion of memristor to all two-terminal resistive devices that show a hysteresis loop pinched at the origin. He also states that memcapacitors and meminductors can be defined by a trivial replacement of symbols in the memristor relations, and, therefore, there should be a correspondence between the hysteresis curves of different types of memory elements. This leads the author to the erroneous conclusion that charge-voltage curves of any memcapacitive devices should be pinched at the origin. The purpose of this Comment is to correct the wrong statements in Chua's paper, as well as to highlight some other inconsistencies in his reasoning. We also provide experimental evidence of a memcapacitive device showing non-pinched hysteresis.
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Submitted 6 May, 2019;
originally announced May 2019.
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On the validity of memristor modeling in the neural network literature
Authors:
Y. V. Pershin,
M. Di Ventra
Abstract:
An analysis of the literature shows that there are two types of non-memristive models that have been widely used in the modeling of so-called "memristive" neural networks. Here, we demonstrate that such models have nothing in common with the concept of memristive elements: they describe either non-linear resistors or certain bi-state systems, which all are devices without memory. Therefore, the re…
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An analysis of the literature shows that there are two types of non-memristive models that have been widely used in the modeling of so-called "memristive" neural networks. Here, we demonstrate that such models have nothing in common with the concept of memristive elements: they describe either non-linear resistors or certain bi-state systems, which all are devices without memory. Therefore, the results presented in a significant number of publications are at least questionable, if not completely irrelevant to the actual field of memristive neural networks.
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Submitted 18 April, 2019;
originally announced April 2019.
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Transient dynamics of pulse-driven memristors in the presence of a stable fixed point
Authors:
V. A. Slipko,
Y. V. Pershin
Abstract:
Some memristors are quite interesting from the point of view of dynamical systems. When driven by narrow pulses of alternating polarities, their dynamics has a stable fixed point, which may be useful for future applications. We study the transient dynamics of two types of memristors characterized by a stable fixed point using a time-averaged evolution equation. Time-averaged trajectories of the Bi…
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Some memristors are quite interesting from the point of view of dynamical systems. When driven by narrow pulses of alternating polarities, their dynamics has a stable fixed point, which may be useful for future applications. We study the transient dynamics of two types of memristors characterized by a stable fixed point using a time-averaged evolution equation. Time-averaged trajectories of the Biolek window function memristor and resistor-threshold type memristor circuit (an effective memristor) are determined analytically, and the times of relaxation to the stable fixed point are found. Our analytical results are in perfect agreement with the results of numerical simulations.
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Submitted 17 April, 2019;
originally announced April 2019.
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Importance of the window function choice for the predictive modelling of memristors
Authors:
V. A. Slipko,
Y. V. Pershin
Abstract:
Window functions are widely employed in memristor models to restrict the changes of the internal state variables to specified intervals. Here we show that the actual choice of window function is of significant importance for the predictive modelling of memristors. Using a recently formulated theory of memristor attractors, we demonstrate that whether stable fixed points exist depends on the type o…
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Window functions are widely employed in memristor models to restrict the changes of the internal state variables to specified intervals. Here we show that the actual choice of window function is of significant importance for the predictive modelling of memristors. Using a recently formulated theory of memristor attractors, we demonstrate that whether stable fixed points exist depends on the type of window function used in the model. Our main findings are formulated in terms of two memristor attractor theorems, which apply to broad classes of memristor models. As an example of our findings, we predict the existence of stable fixed points in Biolek window function memristors and their absence in memristors described by the Joglekar window function, when such memristors are driven by periodic alternating polarity pulses. It is anticipated that the results of this study will contribute toward the development of more sophisticated models of memristive devices and systems.
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Submitted 11 February, 2019; v1 submitted 15 November, 2018;
originally announced November 2018.
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Dynamical attractors of memristors and their networks
Authors:
Y. V. Pershin,
V. A. Slipko
Abstract:
It is shown that the time-averaged dynamics of memristors and their networks periodically driven by alternating-polarity pulses may converge to fixed-point attractors. Starting with a general memristive system model, we derive basic equations describing the fixed-point attractors and investigate attractors in the dynamics of ideal, threshold-type and second-order memristors, and memristive network…
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It is shown that the time-averaged dynamics of memristors and their networks periodically driven by alternating-polarity pulses may converge to fixed-point attractors. Starting with a general memristive system model, we derive basic equations describing the fixed-point attractors and investigate attractors in the dynamics of ideal, threshold-type and second-order memristors, and memristive networks. A memristor potential function is introduced, and it is shown that in some cases the attractor identification problem can be mapped to the problem of potential function minimization. Importantly, the fixed-point attractors may only exist if the function describing the internal state dynamics depends on an internal state variable. Our findings may be used to tune the states of analog memristors, and also be relevant to memristive synapses subjected to forward- and back-propagating spikes.
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Submitted 6 February, 2019; v1 submitted 14 August, 2018;
originally announced August 2018.
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A simple test for ideal memristors
Authors:
Y. V. Pershin,
M. Di Ventra
Abstract:
An ideal memristor is defined as a resistor with memory that, when subject to a time-dependent current, $I(t)$, its resistance $R_M(q)$ depends {\it only} on the charge $q$ that has flowed through it, so that its voltage response is $V(t)=R_M(q)I(t)$. It has been argued that a clear fingerprint of these ideal memristors is a pinched hysteresis loop in their I-V curves. However, a pinched I-V hyste…
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An ideal memristor is defined as a resistor with memory that, when subject to a time-dependent current, $I(t)$, its resistance $R_M(q)$ depends {\it only} on the charge $q$ that has flowed through it, so that its voltage response is $V(t)=R_M(q)I(t)$. It has been argued that a clear fingerprint of these ideal memristors is a pinched hysteresis loop in their I-V curves. However, a pinched I-V hysteresis loop is not a definitive test of whether a resistor with memory is truly an ideal memristor because such a property is shared also by other resistors whose memory depends on additional internal state variables, other than the charge. Here, we introduce a very simple and {\it unambiguous} test that can be utilized to check experimentally if a resistor with memory is indeed an ideal memristor. Our test is based on the duality property of a capacitor-memristor circuit whereby, for any initial resistance states of the memristor and any form of the applied voltage, the final state of an ideal memristor must be identical to its initial state, if the capacitor charge finally returns to its initial value. In actual experiments, a sufficiently wide range of voltage amplitudes and initial states are enough to perform the test. The proposed test can help resolve some long-standing controversies still existing in the literature about whether an ideal memristor does actually exist or it is a purely mathematical concept.
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Submitted 25 September, 2018; v1 submitted 19 June, 2018;
originally announced June 2018.
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Manipulating graphene kinks through positive and negative radiation pressure effects
Authors:
R. D. Yamaletdinov,
T. Romanczukiewicz,
Y. V. Pershin
Abstract:
We introduce an idea of experimental verification of the counterintuitive negative radiation pressure effect in some classical field theories by means of buckled graphene. In this effect, a monochromatic plane wave interacting with topological solutions pulls these solutions towards the source of radiation. Using extensive molecular dynamics simulations, we investigate the traveling wave-induced m…
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We introduce an idea of experimental verification of the counterintuitive negative radiation pressure effect in some classical field theories by means of buckled graphene. In this effect, a monochromatic plane wave interacting with topological solutions pulls these solutions towards the source of radiation. Using extensive molecular dynamics simulations, we investigate the traveling wave-induced motion of kinks in buckled graphene nanoribbons. It is shown that depending on the driving source frequency, amplitude and direction, the kink behavior varies from attraction to repulsion (the negative and positive radiation pressure effects, respectively). Some preliminary explanations are proposed based on the analogy to certain field theory models. Our findings open the way to a new approach to motion control on the nanoscale.
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Submitted 18 September, 2018; v1 submitted 24 April, 2018;
originally announced April 2018.
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Surface effects on ionic Coulomb blockade in nanometer-size pores
Authors:
Hiroya Tanaka,
Hideo Iizuka,
Yuriy V. Pershin,
Massimiliano Di Ventra
Abstract:
Ionic Coulomb blockade in nanopores is a phenomenon that shares some similarities but also differences with its electronic counterpart. Here, we investigate extensively this phenomenon using all-atom molecular dynamics of ionic transport through nanopores of about one nanometer in diameter and up to several nanometers in length. Our goal is to better understand the role of atomic roughness and str…
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Ionic Coulomb blockade in nanopores is a phenomenon that shares some similarities but also differences with its electronic counterpart. Here, we investigate extensively this phenomenon using all-atom molecular dynamics of ionic transport through nanopores of about one nanometer in diameter and up to several nanometers in length. Our goal is to better understand the role of atomic roughness and structure of the pore walls in the ionic Coulomb blockade. Our numerical results reveal the following general trends. First, the nanopore selectivity changes with its diameter, and the nanopore position in the membrane influences the current strength. Second, the ionic transport through the nanopore takes place in a hop**-like fashion over a set of discretized states caused by local electric fields due to membrane atoms. In some cases, this creates a slow-varying "crystal-like" structure of ions inside the nanopore. Third, while at a given voltage, the resistance of the nanopore depends on its length, the slope of this dependence appears to be independent of the molarity of ions. An effective kinetic model that captures the ionic Coulomb blockade behavior observed in MD simulations is formulated.
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Submitted 27 November, 2017;
originally announced November 2017.
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Switching synchronization in 1-D memristive networks: An exact solution
Authors:
V. A. Slipko,
Y. V. Pershin
Abstract:
We study a switching synchronization phenomenon taking place in one-dimensional memristive networks when the memristors switch from the high to low resistance state. It is assumed that the distributions of threshold voltages and switching rates of memristors are arbitrary. Using the Laplace transform, a set of non-linear equations describing the memristors dynamics is solved exactly, without any a…
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We study a switching synchronization phenomenon taking place in one-dimensional memristive networks when the memristors switch from the high to low resistance state. It is assumed that the distributions of threshold voltages and switching rates of memristors are arbitrary. Using the Laplace transform, a set of non-linear equations describing the memristors dynamics is solved exactly, without any approximations. The time dependencies of memristances are found and it is shown that the voltage falls across memristors are proportional to their threshold voltages. A compact expression for the network switching time is derived.
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Submitted 16 August, 2017;
originally announced August 2017.
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Snap-through transition of graphene membranes for memcapacitor applications: A combined study using MD, DFT and elasticity theory
Authors:
R. D. Yamaletdinov,
O. V. Ivakhnenko,
O. V. Sedelnikova,
S. N. Shevchenko,
Y. V. Pershin
Abstract:
Using computational and theoretical approaches, we investigate the snap-through transition of buckled graphene membranes. Our main interest is related to the possibility of using the buckled membrane as a plate of capacitor with memory (memcapacitor). For this purpose, we performed molecular-dynamics (MD) simulations and elasticity theory calculations of the up-to-down and down-to-up snap-through…
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Using computational and theoretical approaches, we investigate the snap-through transition of buckled graphene membranes. Our main interest is related to the possibility of using the buckled membrane as a plate of capacitor with memory (memcapacitor). For this purpose, we performed molecular-dynamics (MD) simulations and elasticity theory calculations of the up-to-down and down-to-up snap-through transitions for membranes of several sizes. We have obtained expressions for the threshold switching forces for both up-to-down and down-to-up transitions. Moreover, the up-to-down threshold switching force was calculated using the density functional theory (DFT). Our DFT results are in general agreement with MD and analytical theory findings. Our systematic approach can be used for the description of other structures, including nanomechanical and biological ones, experiencing the snap-through transition.
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Submitted 25 December, 2017; v1 submitted 24 July, 2017;
originally announced July 2017.
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Kinks and antikinks of buckled graphene: A testing ground for phi^4 field model
Authors:
R. D. Yamaletdinov,
V. A. Slipko,
Y. V. Pershin
Abstract:
Kinks and antikinks of the classical phi^4 field model are topological solutions connecting its two distinct ground states.
Here we establish an analogy between the excitations of a long graphene nanoribbon buckled in the transverse direction and phi^4 model results. Using molecular dynamics simulations, we investigated the dynamics of a buckled graphene nanoribbon with a single kink and with a…
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Kinks and antikinks of the classical phi^4 field model are topological solutions connecting its two distinct ground states.
Here we establish an analogy between the excitations of a long graphene nanoribbon buckled in the transverse direction and phi^4 model results. Using molecular dynamics simulations, we investigated the dynamics of a buckled graphene nanoribbon with a single kink and with a kink-antikink pair. Several features of phi^4 model have been observed including the kink-antikink capture at low energies, kink-antikink reflection at high energies, and a bounce resonance. Our results pave the way towards the experimental observation of a rich variety of phi^4 model predictions based on graphene.
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Submitted 30 May, 2017;
originally announced May 2017.
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Computing with volatile memristors: An application of non-pinched hysteresis
Authors:
Y. V. Pershin,
S. N. Shevchenko
Abstract:
The possibility of in-memory computing with volatile memristive devices, namely, memristors requiring a power source to sustain their memory, is demonstrated. We have adopted a hysteretic graphene-based field emission structure as a prototype of volatile memristor, which is characterized by a non-pinched hysteresis loop. Memristive model of the structure is developed and used to simulate a polymor…
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The possibility of in-memory computing with volatile memristive devices, namely, memristors requiring a power source to sustain their memory, is demonstrated. We have adopted a hysteretic graphene-based field emission structure as a prototype of volatile memristor, which is characterized by a non-pinched hysteresis loop. Memristive model of the structure is developed and used to simulate a polymorphic circuit implementing in-memory computing gates such as the material implication. Specific regions of parameter space realizing useful logic functions are identified. Our results are applicable to other realizations of volatile memory devices.
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Submitted 24 November, 2016;
originally announced November 2016.
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Metastable Memristive Lines for Signal Transmission and Information Processing Applications
Authors:
V. A. Slipko,
Y. V. Pershin
Abstract:
Traditional studies of memristive devices have mainly focused on their applications in non-volatile information storage and information processing. Here, we demonstrate that the third fundamental component of information technologies { the transfer of information { can also be employed with memristive devices. For this purpose, we introduce a metastable memristive circuit. Combining metastable mem…
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Traditional studies of memristive devices have mainly focused on their applications in non-volatile information storage and information processing. Here, we demonstrate that the third fundamental component of information technologies { the transfer of information { can also be employed with memristive devices. For this purpose, we introduce a metastable memristive circuit. Combining metastable memristive circuits into a line, one obtains an architecture capable of transferring a signal edge from one space location to another. We emphasize that the suggested transmission lines employ only resistive components. Moreover, their networks (for example, Y-connected lines) have an information processing capability.
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Submitted 13 October, 2016;
originally announced October 2016.
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The Theory of Spin Noise Spectroscopy: A Review
Authors:
N. A. Sinitsyn,
Y. V. Pershin
Abstract:
Direct measurements of spin fluctuations are becoming the mainstream approach for studies of complex condensed matter, molecular, nuclear, and atomic systems. This review covers recent progress in the field of optical Spin Noise Spectroscopy (SNS) with an additional goal to establish an introduction into its theoretical foundations. Various theoretical techniques that have been recently used to in…
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Direct measurements of spin fluctuations are becoming the mainstream approach for studies of complex condensed matter, molecular, nuclear, and atomic systems. This review covers recent progress in the field of optical Spin Noise Spectroscopy (SNS) with an additional goal to establish an introduction into its theoretical foundations. Various theoretical techniques that have been recently used to interpret results of SNS measurements are explained alongside with examples of their applications.
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Submitted 15 August, 2016; v1 submitted 22 March, 2016;
originally announced March 2016.
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Qubit-based memcapacitors and meminductors
Authors:
Sergey N. Shevchenko,
Yuriy V. Pershin,
Franco Nori
Abstract:
It is shown that superconducting charge and phase qubits are quantum versions of memory capacitive and inductive systems, respectively. We demonstrate that such quantum memcapacitive and meminductive devices offer remarkable and rich response functionalities. In particular, when subjected to periodic input, qubit-based memcapacitors and meminductors exhibit unusual hysteresis curves. Our work not…
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It is shown that superconducting charge and phase qubits are quantum versions of memory capacitive and inductive systems, respectively. We demonstrate that such quantum memcapacitive and meminductive devices offer remarkable and rich response functionalities. In particular, when subjected to periodic input, qubit-based memcapacitors and meminductors exhibit unusual hysteresis curves. Our work not only extends the set of known memcapacitive and meminductive systems to qubit-based quantum devices but also highlights their unique properties potentially useful for future technological applications.
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Submitted 15 July, 2016; v1 submitted 23 February, 2016;
originally announced February 2016.
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Memristive model of hysteretic field emission from carbon nanotube arrays
Authors:
D. V. Gorodetskiy,
A. V. Guselnikov,
S. N. Shevchenko M. A. Kanygin,
A. V. Okotrub,
Y. V. Pershin
Abstract:
Some instances of electron field emitters are characterized by frequency-dependent hysteresis in their current-voltage characteristics. We argue that such emitters can be classified as memristive systems and introduce a general framework to describe their response. As a specific example of our approach, we consider field emission from a carbon nanotube array. Our experimental results demonstrate a…
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Some instances of electron field emitters are characterized by frequency-dependent hysteresis in their current-voltage characteristics. We argue that such emitters can be classified as memristive systems and introduce a general framework to describe their response. As a specific example of our approach, we consider field emission from a carbon nanotube array. Our experimental results demonstrate a low-field hysteresis, which is likely caused by an electrostatic alignment of some of the nanotubes in the applied field. We formulate a memristive model of such phenomenon whose results are in agreement with the experimental results.
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Submitted 17 January, 2016;
originally announced January 2016.
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Memristive Sisyphus circuit for clock signal generation
Authors:
Yuriy V. Pershin,
Sergey N. Shevchenko,
Franco Nori
Abstract:
Frequency generators are widely used in electronics. Here, we report the design and experimental realization of a memristive frequency generator employing a unique combination of only digital logic gates, a single-supply voltage and a realistic threshold-type memristive device. In our circuit, the oscillator frequency and duty cycle are defined by the switching characteristics of the memristive de…
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Frequency generators are widely used in electronics. Here, we report the design and experimental realization of a memristive frequency generator employing a unique combination of only digital logic gates, a single-supply voltage and a realistic threshold-type memristive device. In our circuit, the oscillator frequency and duty cycle are defined by the switching characteristics of the memristive device and external resistors. We demonstrate the circuit operation both experimentally, using a memristor emulator, and theoretically, using a model memristive device with threshold. Importantly, nanoscale realizations of memristive devices offer small-size alternatives to conventional quartz-based oscillators. In addition, the suggested approach can be used for mimicking some cyclic (Sisyphus) processes in nature, such as "drip** ants" or drops from leaky faucets.
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Submitted 27 May, 2016; v1 submitted 28 December, 2015;
originally announced December 2015.
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Reconfigurable Transmission Lines with Memcapacitive Materials
Authors:
Y. V. Pershin,
V. A. Slipko,
M. Di Ventra
Abstract:
We study transmission lines made of memory capacitive (memcapacitive) materials. The transmission properties of these lines can be adjusted on demand using an appropriate sequence of pulses. In particular, we demonstrate a pulse combination that creates a periodic modulation of dielectric properties along the line. Such a structure resembles a distributed Bragg reflector having important optical a…
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We study transmission lines made of memory capacitive (memcapacitive) materials. The transmission properties of these lines can be adjusted on demand using an appropriate sequence of pulses. In particular, we demonstrate a pulse combination that creates a periodic modulation of dielectric properties along the line. Such a structure resembles a distributed Bragg reflector having important optical applications. We present simulation results demonstrating all major steps of such a reconfigurable device operation including reset, programming and transmission of small amplitude signals. The proposed reconfigurable transmission lines employ only passive memory materials and can be realized using available memcapacitive devices.
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Submitted 30 November, 2015;
originally announced November 2015.
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Switching Synchronization in One-Dimensional Memristive Networks
Authors:
V. A. Slipko,
M. Shumovskyi,
Y. V. Pershin
Abstract:
We report on an astonishing switching synchronization phenomenon in one-dimensional memristive networks, which occurs when several memristive systems with different switching constants are switched from the high to low resistance state. Our numerical simulations show that such a collective behavior is especially pronounced when the applied voltage slightly exceeds the combined threshold voltage of…
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We report on an astonishing switching synchronization phenomenon in one-dimensional memristive networks, which occurs when several memristive systems with different switching constants are switched from the high to low resistance state. Our numerical simulations show that such a collective behavior is especially pronounced when the applied voltage slightly exceeds the combined threshold voltage of memristive systems. Moreover, a finite increase in the network switching time is found compared to the average switching time of individual systems. An analytical model is presented to explain our observations. Using this model, we have derived asymptotic expressions for memory resistances at short and long times, which are in excellent agreement with our numerical calculations.
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Submitted 6 July, 2015;
originally announced July 2015.
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A Memcomputing Pascaline
Authors:
Y. V. Pershin,
L. K. Castelano,
F. Hartmann,
V. Lopez-Richard,
M. Di Ventra
Abstract:
The original Pascaline was a mechanical calculator able to sum and subtract integers. It encodes information in the angles of mechanical wheels and through a set of gears, and aided by gravity, could perform the calculations. Here, we show that such a concept can be realized in electronics using memory elements such as memristive systems. By using memristive emulators we have demonstrated experime…
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The original Pascaline was a mechanical calculator able to sum and subtract integers. It encodes information in the angles of mechanical wheels and through a set of gears, and aided by gravity, could perform the calculations. Here, we show that such a concept can be realized in electronics using memory elements such as memristive systems. By using memristive emulators we have demonstrated experimentally the memcomputing version of the mechanical Pascaline, capable of processing and storing the numerical results in the multiple levels of each memristive element. Our result is the first experimental demonstration of multidigit arithmetics with multi-level memory devices that further emphasizes the versatility and potential of memristive systems for future massively-parallel high-density computing architectures.
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Submitted 16 March, 2015;
originally announced March 2015.
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Memcomputing with membrane memcapacitive systems
Authors:
Yuriy V. Pershin,
Fabio L. Traversa,
Massimiliano Di Ventra
Abstract:
We show theoretically that networks of membrane memcapacitive systems -- capacitors with memory made out of membrane materials -- can be used to perform a complete set of logic gates in a massively parallel way by simply changing the external input amplitudes, but not the topology of the network. This polymorphism is an important characteristic of memcomputing (computing with memories) that closel…
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We show theoretically that networks of membrane memcapacitive systems -- capacitors with memory made out of membrane materials -- can be used to perform a complete set of logic gates in a massively parallel way by simply changing the external input amplitudes, but not the topology of the network. This polymorphism is an important characteristic of memcomputing (computing with memories) that closely reproduces one of the main features of the brain. A practical realization of these membrane memcapacitive systems, using, e.g., graphene or other 2D materials, would be a step forward towards a solid-state realization of memcomputing with passive devices.
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Submitted 7 July, 2015; v1 submitted 13 October, 2014;
originally announced October 2014.
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Memcomputing and Swarm Intelligence
Authors:
Y. V. Pershin,
M. Di Ventra
Abstract:
We explore the relation between memcomputing, namely computing with and in memory, and swarm intelligence algorithms. In particular, we show that one can design memristive networks to solve short-path optimization problems that can also be solved by ant-colony algorithms. By employing appropriate memristive elements one can demonstrate an almost one-to-one correspondence between memcomputing and a…
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We explore the relation between memcomputing, namely computing with and in memory, and swarm intelligence algorithms. In particular, we show that one can design memristive networks to solve short-path optimization problems that can also be solved by ant-colony algorithms. By employing appropriate memristive elements one can demonstrate an almost one-to-one correspondence between memcomputing and ant colony optimization approaches. However, the memristive network has the capability of finding the solution in one deterministic step, compared to the stochastic multi-step ant colony optimization. This result paves the way for nanoscale hardware implementations of several swarm intelligence algorithms that are presently explored, from scheduling problems to robotics.
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Submitted 28 August, 2014;
originally announced August 2014.
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Hybrid Spin Noise Spectroscopy and the Spin Hall Effect
Authors:
V. A. Slipko,
N. A. Sinitsyn,
Y. V. Pershin
Abstract:
Here we suggest a novel hybrid spin noise spectroscopy technique, which is sensitive to the spin Hall effect. It is shown that, while the standard spin-spin correlation function is not sensitive to the spin Hall effect, spin-transverse voltage and transverse voltage-voltage correlation functions provide the missing sensitivity being linear and quadratic in the spin Hall coefficient, respectively.…
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Here we suggest a novel hybrid spin noise spectroscopy technique, which is sensitive to the spin Hall effect. It is shown that, while the standard spin-spin correlation function is not sensitive to the spin Hall effect, spin-transverse voltage and transverse voltage-voltage correlation functions provide the missing sensitivity being linear and quadratic in the spin Hall coefficient, respectively. The correlation between transverse voltage and spin fluctuations appears as a result of spin-charge coupling fundamental for the spin Hall effect. We anticipate that the proposed method could find applications in the studies of spin-charge coupling in semiconductors.
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Submitted 2 August, 2013;
originally announced August 2013.
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Memcapacitive neural networks
Authors:
Y. V. Pershin,
M. Di Ventra
Abstract:
We show that memcapacitive (memory capacitive) systems can be used as synapses in artificial neural networks. As an example of our approach, we discuss the architecture of an integrate-and-fire neural network based on memcapacitive synapses. Moreover, we demonstrate that the spike-timing-dependent plasticity can be simply realized with some of these devices. Memcapacitive synapses are a low-energy…
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We show that memcapacitive (memory capacitive) systems can be used as synapses in artificial neural networks. As an example of our approach, we discuss the architecture of an integrate-and-fire neural network based on memcapacitive synapses. Moreover, we demonstrate that the spike-timing-dependent plasticity can be simply realized with some of these devices. Memcapacitive synapses are a low-energy alternative to memristive synapses for neuromorphic computation.
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Submitted 26 July, 2013;
originally announced July 2013.
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Nonequilibrium spin noise spectroscopy
Authors:
Fuxiang Li,
Yuriy V. Pershin,
Valeriy A. Slipko,
Nikolai A. Sinitsyn
Abstract:
Spin Noise Spectroscopy (SNS) is an experimental approach to obtain correlators of mesoscopic spin fluctuations in time by purely optical means. We explore the information that this technique can provide when it is applied to a weakly non-equilibrium regime when an electric current is driven through a sample by an electric field. We find that the noise power spectrum of conducting electrons experi…
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Spin Noise Spectroscopy (SNS) is an experimental approach to obtain correlators of mesoscopic spin fluctuations in time by purely optical means. We explore the information that this technique can provide when it is applied to a weakly non-equilibrium regime when an electric current is driven through a sample by an electric field. We find that the noise power spectrum of conducting electrons experiences a shift, which is proportional to the strength of the spin-orbit coupling for electrons moving along the electric field direction. We propose applications of this effect to measurements of spin orbit coupling anisotropy and separation of spin noise of conducting and localized electrons.
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Submitted 16 July, 2013;
originally announced July 2013.
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Reliable SPICE Simulations of Memristors, Memcapacitors and Meminductors
Authors:
D. Biolek,
M. Di Ventra,
Y. V. Pershin
Abstract:
Memory circuit elements, namely memristive, memcapacitive and meminductive systems, are gaining considerable attention due to their ubiquity and use in diverse areas of science and technology. Their modeling within the most widely used environment, SPICE, is thus critical to make substantial progress in the design and analysis of complex circuits. Here, we present a collection of models of differe…
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Memory circuit elements, namely memristive, memcapacitive and meminductive systems, are gaining considerable attention due to their ubiquity and use in diverse areas of science and technology. Their modeling within the most widely used environment, SPICE, is thus critical to make substantial progress in the design and analysis of complex circuits. Here, we present a collection of models of different memory circuit elements and provide a methodology for their accurate and reliable modeling in the SPICE environment. We also provide codes of these models written in the most popular SPICE versions (PSpice, LTspice, HSPICE) for the benefit of the reader. We expect this to be of great value to the growing community of scientists interested in the wide range of applications of memory circuit elements.
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Submitted 10 July, 2013;
originally announced July 2013.
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Dynamic Computing Random Access Memory
Authors:
Fabio Lorenzo Traversa,
Fabrizio Bonani,
Yuriy V. Pershin,
Massimiliano Di Ventra
Abstract:
The present von Neumann computing paradigm involves a significant amount of information transfer between a central processing unit (CPU) and memory, with concomitant limitations in the actual execution speed. However, it has been recently argued that a different form of computation, dubbed memcomputing [Nature Physics, 9, 200-202 (2013)] and inspired by the operation of our brain, can resolve the…
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The present von Neumann computing paradigm involves a significant amount of information transfer between a central processing unit (CPU) and memory, with concomitant limitations in the actual execution speed. However, it has been recently argued that a different form of computation, dubbed memcomputing [Nature Physics, 9, 200-202 (2013)] and inspired by the operation of our brain, can resolve the intrinsic limitations of present day architectures by allowing for computing and storing of information on the same physical platform. Here we show a simple and practical realization of memcomputing that utilizes easy-to-build memcapacitive systems. We name this architecture Dynamic Computing Random Access Memory (DCRAM). We show that DCRAM provides massively-parallel and polymorphic digital logic, namely it allows for different logic operations with the same architecture, by varying only the control signals. In addition, by taking into account realistic parameters, its energy expenditures can be as low as a few fJ per operation. DCRAM is fully compatible with CMOS technology, can be realized with current fabrication facilities, and therefore can really serve as an alternative to the present computing technology.
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Submitted 17 March, 2014; v1 submitted 26 June, 2013;
originally announced June 2013.