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Quantum Undergraduate Education and Scientific Training
Authors:
Justin K. Perron,
Charles DeLeone,
Shahed Sharif,
Tom Carter,
Joshua M. Grossman,
Gina Passante,
Joshua Sack
Abstract:
Currently, education and workforce training in quantum information science and technology (QIST) exists primarily at the graduate and postdoctoral levels, with few undergraduate efforts beginning to grow out of these. In order to meet the anticipated quantum workforce needs and to ensure that the workforce is demographically representative and inclusive to all communities, the United States must e…
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Currently, education and workforce training in quantum information science and technology (QIST) exists primarily at the graduate and postdoctoral levels, with few undergraduate efforts beginning to grow out of these. In order to meet the anticipated quantum workforce needs and to ensure that the workforce is demographically representative and inclusive to all communities, the United States must expand these efforts at the undergraduate level beyond what is occurring at larger PhD granting institutions and incorporate quantum information science into the curriculum at the nation's predominantly undergraduate institutions (PUIs). On June 3rd and 4th, 2021 the Quantum Undergraduate Education and Scientific Training (QUEST) workshop was held virtually with the goal of bringing together faculty from PUIs to learn the state of undergraduate QIST education, identify challenges associated with implementing QIST curriculum at PUIs, and to develop strategies and solutions to deal with these challenges. This manuscript summarizes the results of workshop discussions with the hope of assisting faculty at PUIs attempting to incorporate quantum information science into their curriculum.
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Submitted 6 October, 2021; v1 submitted 28 September, 2021;
originally announced September 2021.
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Effect of device design on charge offset drift in Si/SiO$_2$ single electron devices
Authors:
Binhui Hu,
Erick D. Ochoa,
Daniel Sanchez,
Justin K. Perron,
Neil M. Zimmerman,
M. D. Stewart Jr
Abstract:
We have measured the low-frequency time instability known as charge offset drift of Si/SiO$_2$ single electron devices (SEDs) with and without an overall poly-Si top gate. We find that SEDs with a poly-Si top gate have significantly less charge offset drift, exhibiting fewer isolated jumps and a factor of two reduction in fluctuations about a stable mean value. The observed reduction can be accoun…
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We have measured the low-frequency time instability known as charge offset drift of Si/SiO$_2$ single electron devices (SEDs) with and without an overall poly-Si top gate. We find that SEDs with a poly-Si top gate have significantly less charge offset drift, exhibiting fewer isolated jumps and a factor of two reduction in fluctuations about a stable mean value. The observed reduction can be accounted for by the electrostatic reduction in the mutual capacitance $C_m$ between defects and the quantum dot, and increase in the total defect capacitance $C_d$ due to the top gate. These results depart from the accepted understanding that the level of charge offset drift in SEDs is determined by the intrinsic material properties, forcing consideration of the device design as well. We expect these results to be of importance in develo** SEDs for applications from quantum information to metrology or wherever charge noise or integrability of devices is a challenge.
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Submitted 11 July, 2018;
originally announced July 2018.
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Valley blockade in a silicon double quantum dot
Authors:
Justin K. Perron,
Michael J. Gullans,
Jacob M. Taylor,
M. D. Stewart, Jr.,
Neil M. Zimmerman
Abstract:
Electrical transport in double quantum dots (DQDs) illuminates many interesting features of the dots' carrier states. Recent advances in silicon quantum information technologies have renewed interest in the valley states of electrons confined in silicon. Here we show measurements of DC transport through a mesa-etched silicon double quantum dot. Comparing bias triangles (i.e., regions of allowed cu…
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Electrical transport in double quantum dots (DQDs) illuminates many interesting features of the dots' carrier states. Recent advances in silicon quantum information technologies have renewed interest in the valley states of electrons confined in silicon. Here we show measurements of DC transport through a mesa-etched silicon double quantum dot. Comparing bias triangles (i.e., regions of allowed current in DQDs) at positive and negative bias voltages we find a systematic asymmetry in the size of the bias triangles at the two bias polarities. Asymmetries of this nature are associated with blocking of tunneling events due to the occupation of a metastable state. Several features of our data lead us to conclude that the states involved are not simple spin states. Rather, we develop a model based on selective filling of valley states in the DQD that is consistent with all of the qualitative features of our data.
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Submitted 8 November, 2017; v1 submitted 20 July, 2016;
originally announced July 2016.
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A new Regime of Pauli-Spin Blockade
Authors:
Justin K. Perron,
M. D. Stewart Jr.,
Neil M. Zimmerman
Abstract:
Pauli-spin blockade (PSB) is a transport phenomenon in double quantum dots that allows for a type of spin to charge conversion often used to probe fundamental physics such as spin relaxation and singlet-triplet coupling. In this paper we theoretically explore Pauli-spin blockade as a function of magnetic field B applied parallel to the substrate. In the well-studied low magnetic field regime, wher…
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Pauli-spin blockade (PSB) is a transport phenomenon in double quantum dots that allows for a type of spin to charge conversion often used to probe fundamental physics such as spin relaxation and singlet-triplet coupling. In this paper we theoretically explore Pauli-spin blockade as a function of magnetic field B applied parallel to the substrate. In the well-studied low magnetic field regime, where PSB occurs in the forward $(1,1)\rightarrow(0,2)$ tunneling direction, we highlight some aspects of PSB that are not discussed in detail in existing literature, including the change in size of both bias triangles measured in the forward and reverse biasing directions as a function of B. At higher fields we predict a crossover to \reverse PSB" in which current is blockaded in the reverse direction due to the occupation of a spin singlet as opposed to the traditional triplet blockade that occurs at low fields. The onset of reverse PSB coincides with the development of a tail like feature in the measured bias triangles and occurs when the Zeeman energy of the polarized triplet equals the exchange energy in the (0,2) charge configuration. In Si quantum dots these fields are experimentally accessible; thus, this work suggests a way to probe singlet to triplet relaxation mechanisms in quantum dots when both electrons occupy the same quantum dot.
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Submitted 27 July, 2015;
originally announced July 2015.
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A quantitative study of bias triangles presented in chemical potential space
Authors:
Justin K. Perron,
M. D. Stewart Jr.,
Neil M. Zimmerman
Abstract:
We present measurements of bias triangles in several biasing configurations. Thorough analysis of the data allows us to present data from all four possible bias configurations on a single plot in chemical potential space. This presentation allows comparison between different biasing directions to be made in a clean and straightforward manner. Our analysis and presentation will prove useful in demo…
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We present measurements of bias triangles in several biasing configurations. Thorough analysis of the data allows us to present data from all four possible bias configurations on a single plot in chemical potential space. This presentation allows comparison between different biasing directions to be made in a clean and straightforward manner. Our analysis and presentation will prove useful in demonstrations of Pauli-spin blockade where comparisons between different biasing directions are paramount. The long term stability of the CMOS compatible Si/SiO2 only architecture leads to the success of this analysis. We also propose a simple variation to this analysis that will extend its use to systems lacking the long term stability of these devices.
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Submitted 14 January, 2015;
originally announced January 2015.
