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Nonlinear transverse current on $\mathcal{C}_{3v}$-symmetric honeycomb lattice
Authors:
Francesco Peronaci,
Takashi Oka
Abstract:
At nonlinear orders in the electric field, the vanishing of the Hall conductivity does not prevent the nonlinear component of the current from being transverse for selected field directions. We study electrons on $\mathcal{C}_{3v}$-symmetric honeycomb lattice for which the Hall conductivity vanishes at first and second order. Nevertheless, the second-order current component is transverse for field…
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At nonlinear orders in the electric field, the vanishing of the Hall conductivity does not prevent the nonlinear component of the current from being transverse for selected field directions. We study electrons on $\mathcal{C}_{3v}$-symmetric honeycomb lattice for which the Hall conductivity vanishes at first and second order. Nevertheless, the second-order current component is transverse for fields perpendicular to the three mirror lines. The $\mathcal{C}_{3v}$ symmetry constrains the first-order and second-order conductivity tensors to have only one independent component each, which we calculate using the quantum kinetic equation. In linearly\hyp{}polarized oscillating field, the current has a zero\hyp{}frequency component switching sign upon $π/2$-rotation of the polarization angle.
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Submitted 22 December, 2021;
originally announced December 2021.
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Mott Memristors based on Field-Induced Carrier Avalanche Multiplication
Authors:
Francesco Peronaci,
Sara Ameli,
Shintaro Takayoshi,
Alexandra Landsman,
Takashi Oka
Abstract:
We present a theory of Mott memristors whose working principle is the non-linear carrier avalanche multiplication in Mott insulators subject to strong electric fields. The internal state of the memristor, which determines its resistance, is encoded in the density of doublon and hole excitations in the Mott insulator. In the current-voltage characteristic, insulating and conducting states are separ…
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We present a theory of Mott memristors whose working principle is the non-linear carrier avalanche multiplication in Mott insulators subject to strong electric fields. The internal state of the memristor, which determines its resistance, is encoded in the density of doublon and hole excitations in the Mott insulator. In the current-voltage characteristic, insulating and conducting states are separated by a negative-differential-resistance region, leading to hysteretic behavior. Under oscillating voltage, the response of a voltage-controlled, non-polar memristive system is obtained, with retarded current and pinched hysteresis loop. As a first step towards neuromorphic applications, we demonstrate self-sustained spiking oscillations in a circuit with a parallel capacitor. Being based on electronic excitations only, this memristor is up to several orders of magnitude faster than previous proposals relying on Joule heating or ionic drift.
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Submitted 1 April, 2021;
originally announced April 2021.
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Floquet prethermalization and Rabi oscillations in optically excited Hubbard clusters
Authors:
Junichi Okamoto,
Francesco Peronaci
Abstract:
We study the properties of Floquet prethermal states in two-dimensional Mott-insulating Hubbard clusters under continuous optical excitation. With exact-diagonalization simulations, we show that Floquet prethermal states emerge not only off resonance, but also for resonant excitation, provided a small field amplitude. In the resonant case, the long-lived quasi-stationary Floquet states are charact…
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We study the properties of Floquet prethermal states in two-dimensional Mott-insulating Hubbard clusters under continuous optical excitation. With exact-diagonalization simulations, we show that Floquet prethermal states emerge not only off resonance, but also for resonant excitation, provided a small field amplitude. In the resonant case, the long-lived quasi-stationary Floquet states are characterized by Rabi oscillations of observables such as double occupation and kinetic energy. At stronger fields, thermalization to infinite temperature is observed. We understand these results in terms of the optically driven two-site Hubbard model and by means of time-dependent perturbation theory.
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Submitted 1 October, 2020;
originally announced October 2020.
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Enhancement of Local Pairing Correlations in Periodically Driven Mott Insulators
Authors:
Francesco Peronaci,
Olivier Parcollet,
Marco Schiró
Abstract:
We investigate a model for a Mott insulator in presence of a time-periodic modulated interaction and a coupling to a thermal reservoir. The combination of drive and dissipation leads to non-equilibrium steady states with a large number of doublon excitations, well above the maximum thermal-equilibrium value. We interpret this effect as an enhancement of local pairing correlations, providing analyt…
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We investigate a model for a Mott insulator in presence of a time-periodic modulated interaction and a coupling to a thermal reservoir. The combination of drive and dissipation leads to non-equilibrium steady states with a large number of doublon excitations, well above the maximum thermal-equilibrium value. We interpret this effect as an enhancement of local pairing correlations, providing analytical arguments based on a Floquet Hamiltonian. Remarkably, this Hamiltonian shows a tendency to develop long-range staggered superconducting correlations. This suggests the possibility of realizing the elusive eta-pairing phase in driven-dissipative Mott Insulators.
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Submitted 6 February, 2020; v1 submitted 1 April, 2019;
originally announced April 2019.
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Resonant thermalization of periodically driven strongly correlated electrons
Authors:
Francesco Peronaci,
Marco Schiró,
Olivier Parcollet
Abstract:
We study the dynamics of the Fermi-Hubbard model driven by a time-periodic modulation of the interaction within nonequilibrium Dynamical Mean-Field Theory. For moderate interaction, we find clear evidence of thermalization to a genuine infinite-temperature state with no residual oscillations. Quite differently, in the strongly correlated regime, we find a quasi-stationary extremely long-lived stat…
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We study the dynamics of the Fermi-Hubbard model driven by a time-periodic modulation of the interaction within nonequilibrium Dynamical Mean-Field Theory. For moderate interaction, we find clear evidence of thermalization to a genuine infinite-temperature state with no residual oscillations. Quite differently, in the strongly correlated regime, we find a quasi-stationary extremely long-lived state with oscillations synchronized with the drive (Floquet prethermalization). Remarkably, the nature of this state dramatically changes upon tuning the drive frequency. In particular, we show the existence of a critical frequency at which the system rapidly thermalizes despite the large interaction. We characterize this resonant thermalization and provide an analytical understanding in terms of a break down of the periodic Schrieffer-Wolff transformation.
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Submitted 23 February, 2018; v1 submitted 21 November, 2017;
originally announced November 2017.
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Transient Dynamics of d-wave Superconductors after a Sudden Excitation
Authors:
Francesco Peronaci,
Marco Schirò,
Massimo Capone
Abstract:
Motivated by recent ultafast pump probe experiments on high-temperature superconductors, we discuss the transient dynamics of a d-wave BCS model after a quantum quench of the interaction parameter. We find that the existence of gap nodes, with the associated nodal quasiparticles, introduces a dissipation channel which makes the dynamics much faster than in the conventional s-wave model. For every…
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Motivated by recent ultafast pump probe experiments on high-temperature superconductors, we discuss the transient dynamics of a d-wave BCS model after a quantum quench of the interaction parameter. We find that the existence of gap nodes, with the associated nodal quasiparticles, introduces a dissipation channel which makes the dynamics much faster than in the conventional s-wave model. For every value of the quench parameters, the superconducting gap rapidly converges to a stationary value smaller than the one at equilibrium. Using a sudden approximation for the gap dynamics, we find an analytical expression for the reduction of spectral weight close to the nodes, which is in qualitative agreement with recent experiments.
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Submitted 23 November, 2015; v1 submitted 3 June, 2015;
originally announced June 2015.
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Phase diagrams of voltage-gated oxide interfaces with strong Rashba coupling
Authors:
D. Bucheli,
M. Grilli,
F. Peronaci,
G. Seibold,
S. Caprara
Abstract:
We propose a model for the two-dimensional electron gas formed at the interface of oxide heterostructures that includes a Rashba spin-orbit coupling proportional to an electric field oriented perpendicularly to the interface. Taking into account the electron density dependence of this electric field confining the electron gas at the interface, we report the occurrence of a phase separation instabi…
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We propose a model for the two-dimensional electron gas formed at the interface of oxide heterostructures that includes a Rashba spin-orbit coupling proportional to an electric field oriented perpendicularly to the interface. Taking into account the electron density dependence of this electric field confining the electron gas at the interface, we report the occurrence of a phase separation instability (signaled by a negative compressibility) for realistic values of the spin-orbit coupling and of the electronic band-structure parameters at zero temperature. We extend the analysis to finite temperatures and in the presence of an in-plane magnetic field, thereby obtaining two phase diagrams which exhibit a phase separation dome. By varying the gating potential the phase separation dome may shrink and vanish at zero temperature into a quantum critical point where the charge fluctuates dynamically. Similarly the phase separation may be spoiled by a planar magnetic field even at zero temperature leading to a line of quantum critical points.
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Submitted 5 June, 2014; v1 submitted 20 July, 2013;
originally announced July 2013.
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Intrinsic instability of electronic interfaces with strong Rashba coupling
Authors:
S. Caprara,
F. Peronaci,
M. Grilli
Abstract:
We consider a model for the two-dimensional electron gas formed at the interface of oxide heterostructures, which includes a Rashba spin-orbit coupling proportional to the electric field perpendicular to the interface. Based on the standard mechanism of polarity catastrophe, we assume that the electric field is proportional to the electron density. Under these simple and general assumptions, we sh…
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We consider a model for the two-dimensional electron gas formed at the interface of oxide heterostructures, which includes a Rashba spin-orbit coupling proportional to the electric field perpendicular to the interface. Based on the standard mechanism of polarity catastrophe, we assume that the electric field is proportional to the electron density. Under these simple and general assumptions, we show that a phase separation instability occurs for realistic values of the spin-orbit coupling and of the band parameters. This could provide an intrinsic mechanism for the recently observed inhomogeneous phases at the LaAlO_3/SrTiO_3 or LaTiO_3/SrTiO_3 interfaces.
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Submitted 12 November, 2012; v1 submitted 4 April, 2012;
originally announced April 2012.