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Generation of electro-optic frequency combs with optimized flatness in a silicon ring resonator modulator
Authors:
Erwan Weckenmann,
Thyago Monteiro,
Uiara Celine de Moura,
Francesco Da Ros,
Laurent Bramerie,
Mathilde Gay,
Diego Pérez-Galacho,
Lucas Deniel,
Frédéric Boeuf,
Delphine Marris-Morini,
Darko Zibar,
Christophe Peucheret
Abstract:
The flatness of electro-optic frequency combs (EOFCs) generated in a single silicon ring resonator modulator (RRM) is optimized by employing harmonic superposition of the radio-frequency driving signal. A differential evolution algorithm is employed in conjunction with a simplified model of the RRM for offline optimization of the amplitudes and phases of harmonic driving signals and the operating…
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The flatness of electro-optic frequency combs (EOFCs) generated in a single silicon ring resonator modulator (RRM) is optimized by employing harmonic superposition of the radio-frequency driving signal. A differential evolution algorithm is employed in conjunction with a simplified model of the RRM for offline optimization of the amplitudes and phases of harmonic driving signals and the operating point of the RRM. The optimized driving signals are then applied to a silicon RRM. EOFCs containing 7 and 9 lines are synthesized with a power imbalance between the lines of 2.9 dB and 5.4 dB, respectively, compared to 9.4 dB for an optimized 5-line comb generated from a single sinusoidal driving signal.
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Submitted 31 October, 2023;
originally announced October 2023.
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Spatial and polarization division multiplexing harnessing on-chip optical beam forming
Authors:
David González-Andrade,
Xavier Le Roux,
Guy Aubin,
Farah Amar,
Thi Hao Nhi Nguyen,
Paula Nuño Ruano,
Thi Thuy Duong Dinh,
Dorian Oser,
Diego Pérez-Galacho,
Eric Cassan,
Delphine Marris-Morini,
Laurent Vivien,
Carlos Alonso-Ramos
Abstract:
On-chip spatial and polarization multiplexing have emerged as a powerful strategy to boost the bandwidth of integrated optical transceivers. State-of-the-art multiplexers require accurate control of the relative phase or the spatial distribution among different guided optical modes, seriously compromising the bandwidth and performance of the devices. To overcome this limitation, we propose a new a…
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On-chip spatial and polarization multiplexing have emerged as a powerful strategy to boost the bandwidth of integrated optical transceivers. State-of-the-art multiplexers require accurate control of the relative phase or the spatial distribution among different guided optical modes, seriously compromising the bandwidth and performance of the devices. To overcome this limitation, we propose a new approach based on the coupling between guided modes in integrated waveguides and optical beams free-propagating on the chip plane. The engineering of the evanescent coupling between the guided modes and free-propagating beams allows spatial and polarization multiplexing with state-of-the-art performance. To demonstrate the potential and versatility of this approach, we have developed a two-polarization multiplexed link and a three-mode multiplexed link using standard 220-nm-thick silicon-on-insulator technology. The two-polarization link shows a measured -35 dB crosstalk bandwidth of 180 nm, while the three-mode link exhibits a -20 dB crosstalk bandwidth of 195 nm. These bandwidths cover the S, C, L, and U communication bands. We used these links to demonstrate error-free transmission (bit-error-rate < 10-9) of two and three non-return-to-zero signals at 40 Gbps each, with power penalties below 0.08 dB and 1.5 dB for the two-polarization and three-mode links respectively. The approach demonstrated here for two polarizations and three modes is also applicable to future implementation of more complex multiplexing schemes.
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Submitted 25 December, 2022;
originally announced December 2022.
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Linearization of a dual-parallel Mach-Zehnder modulator using optical carrier band processing
Authors:
Luis Torrijos-Morán,
Cristina Catalá-Lahoz,
Daniel Pérez-López,
Li Xu,
Wang Tianxiang,
Diego Pérez-Galacho
Abstract:
The linearization of a microwave photonic link based on a dual-parallel Mach-Zehnder modulator is theoretically described and experimentally demonstrated. Up to four different radio frequency tones are considered in the study, which allow us to provide a complete mathematical description of all third-order distortion terms that arise at the photodetector. Simulations show that a complete lineariza…
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The linearization of a microwave photonic link based on a dual-parallel Mach-Zehnder modulator is theoretically described and experimentally demonstrated. Up to four different radio frequency tones are considered in the study, which allow us to provide a complete mathematical description of all third-order distortion terms that arise at the photodetector. Simulations show that a complete linearization is obtained by properly tuning the DC bias voltages and processing the optical carrier and. As a result, a suppression of 17 dBm is experimentally obtained for the third-order distortion terms, as well as a SDFR improvement of 3 dB. The proposed linearization method enables the simultaneous modulation of four different signals without the need of additional radio frequency components, which is desirable to its implementation in integrated optics and makes it suitable for several applications in microwave photonics.
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Submitted 15 November, 2022; v1 submitted 29 July, 2022;
originally announced July 2022.
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Coherency-broken Bragg filters: surpassing on-chip rejection limitations
Authors:
D. Oser,
F. Mazeas,
X. Le Roux,
D. Perez-Galacho,
O. Alibart,
S. Tanzilli,
L. Labonte,
D. Marris-Morini,
L. Vivien,
E. Cassan,
C. Alonso-Ramos
Abstract:
Selective on-chip optical filters with high rejection levels are key components for a wide range of advanced photonic circuits. However, maximum achievable rejection in state-of-the-art on-chip devices is seriously limited by phase errors arising from fabrication imperfections. Due to coherent interactions, unwanted phase-shifts result in detrimental destructive interferences that distort the filt…
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Selective on-chip optical filters with high rejection levels are key components for a wide range of advanced photonic circuits. However, maximum achievable rejection in state-of-the-art on-chip devices is seriously limited by phase errors arising from fabrication imperfections. Due to coherent interactions, unwanted phase-shifts result in detrimental destructive interferences that distort the filter response, whatever the chosen strategy (resonators, interferometers, Bragg filters, etc.). Here we propose and experimentally demonstrate a radically different approach to overcome this fundamental limitation, based on coherency-broken Bragg filters. We exploit non-coherent interaction among modal-engineered waveguide Bragg gratings separated by single-mode waveguides to yield effective cascading, even in the presence of fabrication errors. This technologically independent approach allows seamless combination of filter stages with moderate performance, providing a dramatic increase of on-chip rejection. Based on this concept, we experimentally demonstrate on-chip non-coherent cascading of Si Bragg filters with a record light rejection exceeding 80 dB in the C-band.
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Submitted 19 June, 2018;
originally announced June 2018.
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Optical pump-rejection filter based on silicon sub-wavelength engineered photonic structures
Authors:
Diego Pérez-Galacho,
Carlos Alonso-Ramos,
Florent Mazeas,
Xavier Le Roux,
Dorian Oser,
Weiwei Zhang,
Delphine Marris-Morini,
Laurent Labonté,
Sébastien Tanzilli,
Éric Cassan,
Laurent Vivien
Abstract:
The high index contrast of the silicon-on-insulator (SOI) platform allows the realization of ultra-compact photonic circuits. However, this high contrast hinders the implementation of narrow-band Bragg filters. These typically require corrugations widths of a few nanometers or double-etch geometries, hampering device fabrication. Here we report, for the first time, on the realization of SOI Bragg…
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The high index contrast of the silicon-on-insulator (SOI) platform allows the realization of ultra-compact photonic circuits. However, this high contrast hinders the implementation of narrow-band Bragg filters. These typically require corrugations widths of a few nanometers or double-etch geometries, hampering device fabrication. Here we report, for the first time, on the realization of SOI Bragg filters based on sub-wavelength index engineering in a differential corrugation width configuration. The proposed double periodicity structure allows narrow-band rejection with a single etch step and relaxed width constraints. Based on this concept, we experimentally demonstrate a single-etch, $\mathbf{220\,nm}$ thick, Si Bragg filter featuring a corrugation width of $\mathbf{150\,nm}$, a rejection bandwidth of $\mathbf{1.1\,nm}$ and an extinction ratio exceeding $\mathbf{40\,dB}$. This represents a ten-fold width increase compared to conventional single-periodicity, single-etch counterparts with similar bandwidths.
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Submitted 29 May, 2017;
originally announced May 2017.
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Long-period suspended silicon Bragg grating filter for hybrid near- and mid-infrared operation
Authors:
Carlos Alonso-Ramos,
Xavier Le Roux,
Daniel Benedikovic,
Vladyslav Vakarin,
Elena Duran-Valdeiglesias,
Diego Perez-Galacho,
Eric Cassan,
Delphine Marris-Morini,
Pavel Cheben,
Laurent Vivien
Abstract:
The large transparency window of silicon, covering the 1.1 um 8 um wavelength range, makes it a promising platform for the implementation of photothermal-based absorption spectrometers. These devices indirectly sense absorption in the mid-infrared (MIR) by using near-infrared (NIR) wavelengths, thereby enabling the realization of MIR absorption spectrometers without the need for MIR photodetectors…
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The large transparency window of silicon, covering the 1.1 um 8 um wavelength range, makes it a promising platform for the implementation of photothermal-based absorption spectrometers. These devices indirectly sense absorption in the mid-infrared (MIR) by using near-infrared (NIR) wavelengths, thereby enabling the realization of MIR absorption spectrometers without the need for MIR photodetectors. Nevertheless, due to their comparatively large index contrast and cross-sections, MIR Si strip waveguides are multi-mode at NIR wavelengths, hindering device implementation. Here we present, for the first time, an integrated Bragg grating waveguide filter for hybrid near- and mid-infrared operation. Specifically, the filter is implemented in a single-etch suspended silicon corrugated waveguide with an effectively single-mode operation in NIR region for a waveguide cross-section as large as 0.5 um x 1.1 um. At the same time, the waveguide supports single-mode propagation in MIR region. We demonstrate a long-period waveguide Bragg grating yielding a sharp third-order Bragg resonance for the fundamental waveguide mode and radiating the higher order modes. We experimentally demonstrate a notch filter with a 4nm bandwidth and 40 dB extinction ratio with a temperature-dependent Bragg wavelength shift of 70pm/K.
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Submitted 16 October, 2016;
originally announced October 2016.
