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Electronic, magnetic and galvanomagnetic properties of Co-based Heusler alloys: possible states of a half-metallic ferromagnet and spin gapless semiconductor
Authors:
A. A. Semiannikova,
Yu. A. Perevozchikova,
V. Yu Irkhin,
E. B. Marchenkova,
P. S. Korenistov,
V. V. Marchenkov
Abstract:
Parameters of the energy gap and, consequently, electronic, magnetic and galvanomagnetic properties in different X$_2$YZ Heusler alloys can vary quite strongly. In particular, half-metallic ferromagnets (HMFs) and spin gapless semiconductors (SGSs) with almost 100% spin polarization of charge carriers are promising materials for spintronics. The changes in the electrical, magnetic and galvanomagne…
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Parameters of the energy gap and, consequently, electronic, magnetic and galvanomagnetic properties in different X$_2$YZ Heusler alloys can vary quite strongly. In particular, half-metallic ferromagnets (HMFs) and spin gapless semiconductors (SGSs) with almost 100% spin polarization of charge carriers are promising materials for spintronics. The changes in the electrical, magnetic and galvanomagnetic properties of the Co$_2$YSi (Y = Ti, V, Cr, Mn, Fe) and Co$_2$MnZ Heusler alloys (Z = Al, Si, Ga, Ge) in possible HMF and/or SGS states were followed and their interconnection was established. Significant changes in the values of the magnetization and residual resistivity were found. At the same time, the correlations between the changes in these electronic and magnetic characteristics depending on the number of valence electrons and spin polarization are observed.
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Submitted 1 February, 2021;
originally announced February 2021.
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Peculiarities of electronic transport and magnetic state in half-metallic ferromagnetic and spin gapless semiconducting Heusler alloys
Authors:
V. V. Marchenkov,
V. Yu. Irkhin,
Yu. A. Perevozchikova
Abstract:
A brief survey of experimental and theoretical studies of half-metallic ferromagnets (HMFs) and spin gapless semiconductors is given, the possible candidates being the X$_2$YZ (X = Mn, Fe, Co; Y = Ti, V, Cr, Mn, Fe, Co, Ni; Z = Al, Si, Ga, Ge, In, Sn, Sb) Heusler alloys. The data on the electrical resistivity, normal and anomalous Hall Effect, and magnetic properties are presented. It is shown tha…
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A brief survey of experimental and theoretical studies of half-metallic ferromagnets (HMFs) and spin gapless semiconductors is given, the possible candidates being the X$_2$YZ (X = Mn, Fe, Co; Y = Ti, V, Cr, Mn, Fe, Co, Ni; Z = Al, Si, Ga, Ge, In, Sn, Sb) Heusler alloys. The data on the electrical resistivity, normal and anomalous Hall Effect, and magnetic properties are presented. It is shown that the Co$_2$FeZ alloys demonstrate properties of conventional ferromagnets, the HMF properties being also manifested at the variation of the Z-component. The Fe$_2$YAl and Mn$_2$YAl alloys show at the variation of the Y-component both metallic and semiconducting electronic characteristics, the magnetic properties, changing from the ferromagnetic to compensated ferrimagnetic state. The HMF and spin gapless semiconductor states are supposed to exist in these Heusler alloys systems.
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Submitted 23 December, 2019;
originally announced December 2019.
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Peculiarities of the electronic transport in half-metallic Co-based Heusler alloys
Authors:
V. V. Marchenkov,
Yu. A. Perevozchikova,
N. I. Kourov,
V. Yu. Irkhin,
M. Eisterer,
T. Gao
Abstract:
Electrical, magnetic and galvanomagnetic properties of half-metallic Heusler alloys of Co$_2$YZ (Y = Ti, V, Cr, Mn, Fe, Ni, and Z = Al, Si, Ga, Ge, In, Sn, Sb) were studied in the temperature range 4.2--900 K and in magnetic fields of up to 100 kOe. It was found that varying Y in affects strongly the electric resistivity and its temperature dependence $ρ(T)$, while this effect is not observed upon…
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Electrical, magnetic and galvanomagnetic properties of half-metallic Heusler alloys of Co$_2$YZ (Y = Ti, V, Cr, Mn, Fe, Ni, and Z = Al, Si, Ga, Ge, In, Sn, Sb) were studied in the temperature range 4.2--900 K and in magnetic fields of up to 100 kOe. It was found that varying Y in affects strongly the electric resistivity and its temperature dependence $ρ(T)$, while this effect is not observed upon changing Z. When Y is varied, extrema (maximum or minimum) are observed in $ρ(T)$ near the Curie temperature $T_C$. At $T < T_C$, the $ρ(T)$ behavior can be ascribed to a change in electronic energy spectrum near the Fermi level. The coefficients of the normal and anomalous Hall effect were determined. It was shown that the latter coefficient, $R_S$, is related to the residual resistivity $ρ_0$ by a power law $R_S \sim ρ_0^k/M_S$ with $M_S$ the spontaneous magnetization. The exponent $k$ was found to be 1.8 for Co$_2$FeZ alloys, which is typical for asymmetric scattering mechanisms, and 2.9 for Co$_2$YAl alloys, which indicates an additional contribution to the anomalous Hall effect. The temperature dependence of resistivity at low temperatures is analyzed and discussed in the framework of the two-magnon scattering theory.
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Submitted 5 December, 2017;
originally announced December 2017.
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NMR studies of the topological insulator Bi2Te3
Authors:
A. O. Antonenko,
E. V. Charnaya,
D. Yu. Nefedov,
D. Yu. Podorozhkin,
A. V. Uskov,
A. S. Bugaev,
M. K. Lee,
L. J. Chang,
S. V. Naumov,
Yu. A. Perevozchikova,
V. V. Chistyakov,
J. C. A. Huang,
V. V. Marchenkov
Abstract:
Te NMR studies were carried out for the bismuth telluride topological insulator in a wide range from room temperature down to 12.5 K. The measurements were made on a Bruker Avance 400 pulse spectrometer. The NMR spectra were collected for the mortar and pestle powder sample and for single crystalline stacks with orientations c parallel and perpendicular to field. The activation energy responsible…
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Te NMR studies were carried out for the bismuth telluride topological insulator in a wide range from room temperature down to 12.5 K. The measurements were made on a Bruker Avance 400 pulse spectrometer. The NMR spectra were collected for the mortar and pestle powder sample and for single crystalline stacks with orientations c parallel and perpendicular to field. The activation energy responsible for thermal activation. The spectra for the stack with c parallel to field showed some particular behavior below 91 K.
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Submitted 18 January, 2017;
originally announced January 2017.
