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Deep-level structure of the spin-active recombination center in dilute nitrides
Authors:
A. C. Ulibarri,
C. T. K. Lew,
S. Q. Lim,
J. C. McCallum,
B. C. Johnson,
J. C. Harmand,
J. Peretti,
A. C. H. Rowe
Abstract:
A Gallium interstitial defect (Ga$_{\textrm{i}}$) is thought to be responsible for the spectacular spin-dependent recombination (SDR) in GaAs$_{1-x}$N$_x$ dilute nitride semiconductors. Current understanding associates this defect with two in-gap levels corresponding to the (+/0) and (++/+) charge-state transitions. Using a spin-sensitive photo-induced current transient spectroscopy, the in-gap el…
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A Gallium interstitial defect (Ga$_{\textrm{i}}$) is thought to be responsible for the spectacular spin-dependent recombination (SDR) in GaAs$_{1-x}$N$_x$ dilute nitride semiconductors. Current understanding associates this defect with two in-gap levels corresponding to the (+/0) and (++/+) charge-state transitions. Using a spin-sensitive photo-induced current transient spectroscopy, the in-gap electronic structure of a $x$ = 0.021 alloy is revealed. The (+/0) state lies $\approx$ 0.27 eV below the conduction band edge, and an anomalous, negative activation energy reveals the presence of not one but \textit{two} other states in the gap. The observations are consistent with a (++/+) state $\approx$ 0.19 eV above the valence band edge, and a hitherto ignored, (+++/++) state $\approx$ 25 meV above the valence band edge. These observations can inform efforts to better model the SDR and the Ga$_{\textrm{i}}$ defect's local chemical environment.
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Submitted 1 December, 2023; v1 submitted 27 October, 2023;
originally announced October 2023.
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A systematic study of spin-dependent recombination in GaAs$_{1-x}$N$_x$ as a function of nitrogen content
Authors:
A. C. Ulibarri,
R. Kothari,
A. Garcia,
J. C. Harmand,
S. Park,
F. Cadiz,
J. Peretti,
A. C. H. Rowe
Abstract:
A systematic study of spin-dependent recombination (SDR) under steady-state optical pum** conditions in dilute nitride semiconductors as a function of nitrogen content is reported. The alloy content is determined by a fit of the photoluminescence (PL) intensity using a Roosbroeck-Shockley relation and verified by a study of the GaN-like LO$_2$ phonon peak in a Raman spectroscopy map. PL spectra…
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A systematic study of spin-dependent recombination (SDR) under steady-state optical pum** conditions in dilute nitride semiconductors as a function of nitrogen content is reported. The alloy content is determined by a fit of the photoluminescence (PL) intensity using a Roosbroeck-Shockley relation and verified by a study of the GaN-like LO$_2$ phonon peak in a Raman spectroscopy map. PL spectra taken from alloys of the form GaAs$_{1-x}$N$_x$ where $0.022 < x < 0.036$ exhibit PL intensity increases when switching from a linearly- to a circularly-polarized pump up to a factor of 5 for $x = 0.022$. This work used a 1.39 eV laser with a radius of 0.6 $μ$m. The observed SDR ratio monotonically decreases with increasing $x$, reaching 1.5 for $x = 0.036$. Moreover, the excitation power required to obtain maximum SDR systematically increases with increasing $x$, varying from 0.6 mW for $x = 0.022$ to 15 mW for $x = 0.036$. These observations are consistent with an increase in the density of electronically active defects with increasing nitrogen content, both those responsible for the SDR as well as other, standard Shockley-Read-Hall (SRH) centers.
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Submitted 18 August, 2022;
originally announced August 2022.
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Nanoscale map** of sub-gap electroluminescence from step-bunched, oxidized 4H-SiC surfaces
Authors:
Natalia Alyabyeva,
Jacques Ding,
Mylène Sauty,
Judith Woerle,
Yann Jousseaume,
Gabriel Ferro,
Jeffrey C. McCallum,
Jacques Peretti,
Brett C. Johnson,
Alistair C. H. Rowe
Abstract:
Scanning tunneling luminescence microscopy (STLM) along with scanning tunneling spectroscopy (STS) is applied to a step-bunched, oxidized 4H-SiC surface prepared on the silicon face of a commercial, n-type SiC wafer using a silicon melt process. The step-bunched surface consists of atomically smooth terraces parallel to the [0001] crystal planes, and rougher risers consisting of nanoscale steps fo…
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Scanning tunneling luminescence microscopy (STLM) along with scanning tunneling spectroscopy (STS) is applied to a step-bunched, oxidized 4H-SiC surface prepared on the silicon face of a commercial, n-type SiC wafer using a silicon melt process. The step-bunched surface consists of atomically smooth terraces parallel to the [0001] crystal planes, and rougher risers consisting of nanoscale steps formed by the termination of these planes. The rather striking topography of this surface is well resolved with large tip biases of the order of -8 V and set currents of magnitude less than 1 nA. Hysteresis in the STS spectra is preferentially observed on the risers suggesting that they contain a higher density of surface charge traps than the terraces where hysteresis is more frequently absent. Similarly, at 50 K intense sub-gap light emission centered around 2.4 eV is observed mainly on the risers albeit only with larger tunneling currents of magnitude equal to or greater than 10 nA. These results demonstrate that STLM holds great promise for the observation of impurities and defects responsible for sub-gap light emission with spatial resolutions approaching the length scale of the defects themselves.
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Submitted 18 August, 2022;
originally announced August 2022.
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Probing local emission properties in InGaN/GaN quantum wells by scanning tunneling luminescence microscopy
Authors:
Mylène Sauty,
Natalia Alyabyeva,
Cheyenne Lynsky,
Yi Chao Chow,
Shuji Nakamura,
James S. Speck,
Yves Lassailly,
Alistair C. H. Rowe,
Claude Weisbuch,
Jacques Peretti
Abstract:
Scanning tunneling electroluminescence microscopy is performed on a 3-nm-thick InGaN/GaN quantum well with x = 0.23 such that the main light emission occurs in the green. The technique is used to map the local recombination properties at a scale of ~10 nm and to correlate them with the surface topography imaged by scanning tunneling microscopy. A 500 nm x 500 nm area around a 150-nm large and 2.5-…
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Scanning tunneling electroluminescence microscopy is performed on a 3-nm-thick InGaN/GaN quantum well with x = 0.23 such that the main light emission occurs in the green. The technique is used to map the local recombination properties at a scale of ~10 nm and to correlate them with the surface topography imaged by scanning tunneling microscopy. A 500 nm x 500 nm area around a 150-nm large and 2.5-nm deep hexagonal defect is probed, revealing emission at higher energies close to the defect edges, a feature which is not visible in the macro-photoluminescence spectrum of the sample. Via a fitting of the local tunneling electroluminescence spectra, quantitative information on the fluctuations of the intensity, energy, width and phonon replica intensity of the different spectral contributions are obtained, revealing information about carrier localization in the quantum well. This procedure also indicates that carrier diffusion length on the probed part of the quantum well is approximately 40 nm.
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Submitted 7 December, 2022; v1 submitted 17 August, 2022;
originally announced August 2022.
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Evidence of localization effect on photoelectron transport induced by alloy disorder in nitride semiconductor compounds
Authors:
Mylène Sauty,
Nicolas M. S. Lopes,
Jean-Philippe Banon,
Yves Lassailly,
Lucio Martinelli,
Abdullah Alhassan,
Shuji Nakamura,
James S. Speck,
Claude Weisbuch,
Jacques Peretti
Abstract:
Near-bandgap photoemission spectroscopy experiments were performed on p-GaN and p-InGaN/GaN photocathodes activated to negative electron affinity. The photoemission quantum yield of the InGaN samples drops by more than one order of magnitude when the temperature is decreased while it remains constant on the GaN sample. This indicates a freezing of photoelectron transport in p-InGaN that we attribu…
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Near-bandgap photoemission spectroscopy experiments were performed on p-GaN and p-InGaN/GaN photocathodes activated to negative electron affinity. The photoemission quantum yield of the InGaN samples drops by more than one order of magnitude when the temperature is decreased while it remains constant on the GaN sample. This indicates a freezing of photoelectron transport in p-InGaN that we attribute to electron localization in the fluctuating potential induced by the alloy disorder. This interpretation is confirmed by the disappearence at low temperature of the peak in the photoemission spectrum that corresponds to the contribution of the photoelectrons relaxed at the bottom of the InGaN conduction band.
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Submitted 10 January, 2022;
originally announced January 2022.
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Evidence for trap-assisted Auger recombination in MBE grown InGaN quantum wells by electron emission spectroscopy
Authors:
Daniel Myers,
Andrew Espenlaub,
Kristina Gelzinyte,
Erin Young,
Lucio Martinelli,
Jacques Peretti,
Claude Weisbuch,
James Speck
Abstract:
We report on the direct measurement of hot electrons generated in the active region of blue light-emitting diodes grown by ammonia molecular beam epitaxy by electron emission spectroscopy. The external quantum efficiency of these devices is <1% and does not droop; thus, the efficiency losses from the intrinsic, interband, electron-electron-hole, or electron-hole-hole Auger should not be a signific…
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We report on the direct measurement of hot electrons generated in the active region of blue light-emitting diodes grown by ammonia molecular beam epitaxy by electron emission spectroscopy. The external quantum efficiency of these devices is <1% and does not droop; thus, the efficiency losses from the intrinsic, interband, electron-electron-hole, or electron-hole-hole Auger should not be a significant source of hot carriers. The detection of hot electrons in this case suggests that an alternate hot electron generating process is occurring within these devices, likely a trap-assisted Auger recombination process.
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Submitted 11 December, 2020;
originally announced December 2020.
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Light-tunable optical cell manipulation via photoactive azobenzene-containing thin film bio-substrate
Authors:
Olivier Lefebvre,
Mireille Lambert,
Clotilde Randriamampita,
Sandra Pinto,
Khalid Lahlil,
Jacques Peretti,
Claire Smadja,
Filippo Fabbri
Abstract:
In-vivo, real-time study of the local and collective cellular biomechanical responses requires the fine and selective manipulation of the cellular environment. One innovative pathway is the use of photoactive bio-substrates such as azobenzene-containing materials, which exhibit spectacular photomechanical properties, to optically trigger the local, mechanical stimulation of cells. Excited cells ex…
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In-vivo, real-time study of the local and collective cellular biomechanical responses requires the fine and selective manipulation of the cellular environment. One innovative pathway is the use of photoactive bio-substrates such as azobenzene-containing materials, which exhibit spectacular photomechanical properties, to optically trigger the local, mechanical stimulation of cells. Excited cells exhibit spectacular morphological modifications and area shrinkage, which are dependent on the illumination. This demonstrates the capabilities of photomechanically active substrates to study the phenomena resulting from the mechanical interaction of cells with their environment.
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Submitted 28 December, 2021; v1 submitted 1 December, 2020;
originally announced December 2020.
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Ultrafast electrons dynamics reveal the high potential of InSe for hot carrier optoelectronics
Authors:
Zhesheng Chen,
Christine Giorgetti,
Jelena Sjakste,
Raphael Cabouat,
Valerie Veniard,
Zailan Zhang,
Amina Taleb-Ibrahimi,
Evangelos Papalazarou,
Marino Marsi,
Abhay Shukla,
Jacques Peretti,
Luca Perfetti
Abstract:
We monitor the dynamics of hot carriers in InSe by means of two photons photoelectron spectroscopy (2PPE). The electrons excited by photons of 3.12 eV experience a manifold relaxation. First, they thermalize to the electronic states degenerate with the $\bar M$ valley. Subsequently, the electronic cooling is dictated by Fröhlich coupling with phonons of small momentum transfer. Ab-initio calculati…
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We monitor the dynamics of hot carriers in InSe by means of two photons photoelectron spectroscopy (2PPE). The electrons excited by photons of 3.12 eV experience a manifold relaxation. First, they thermalize to the electronic states degenerate with the $\bar M$ valley. Subsequently, the electronic cooling is dictated by Fröhlich coupling with phonons of small momentum transfer. Ab-initio calculations predict cooling rates that are in good agreement with the observed dynamics. We argue that electrons accumulating in states degenerate with the $\bar M$ valley could travel through a multilayer flake of InSe with lateral size of 1 micrometer. The hot carriers pave a viable route to the realization of below-bandgap photodiodes and Gunn oscillators. Our results indicate that these technologies may find a natural implementation in future devices based on layered chalcogenides.
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Submitted 26 May, 2018;
originally announced May 2018.
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Evidence of nanoscale Anderson localization induced by intrinsic compositional disorder in InGaN/GaN quantum wells by scanning tunneling luminescence spectroscopy
Authors:
W. Hahn,
J. -M. Lentali,
P. Polovodov,
N. Young,
S. Nakamura,
J. S. Speck,
C. Weisbuch,
M. Filoche,
Y-R. Wu,
M. Piccardo,
F. Maroun,
L. Martinelli,
Y. Lassailly,
J. Peretti
Abstract:
We present direct experimental evidences of Anderson localization induced by the intrinsic alloy compositional disorder of InGaN/GaN quantum wells. Our approach relies on the measurement of the luminescence spectrum under local injection of electrons from a scanning tunneling microscope tip into a near-surface single quantum well. Fluctuations in the emission line shape are observed on a few-nanom…
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We present direct experimental evidences of Anderson localization induced by the intrinsic alloy compositional disorder of InGaN/GaN quantum wells. Our approach relies on the measurement of the luminescence spectrum under local injection of electrons from a scanning tunneling microscope tip into a near-surface single quantum well. Fluctuations in the emission line shape are observed on a few-nanometer scale. Narrow emission peaks characteristic of single localized states are resolved. Calculations in the framework of the localization landscape theory provide the effective confining potential map stemming from composition fluctuations. This theory explains well the observed nanometer scale carrier localization and the energies of these Anderson-type localized states. The energy spreading of the emission from localized states is consistent with the usually observed very broad photo- or electro-luminescence spectra of InGaN/GaN quantum well structures.
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Submitted 23 May, 2018;
originally announced May 2018.
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Monitoring the orientation of rare-earth-doped nanorods for flow shear tomography
Authors:
Jongwook Kim,
Sebastien Michelin,
Michiel Gilberts,
Lucio Martinelli,
Elodie Chaudan,
Gabriel Amselem,
Etienne Fradet,
Jean Pierre Boilot,
Albert M. Brouwer,
Charles N. Baroud,
Jacques Peretti,
Thierry Gacoin
Abstract:
Rare-earth phosphors exhibit unique luminescence polarization features originating from the anisotropic symmetry of the emitter ion's chemical environment. However, to take advantage of this peculiar property, it is necessary to control and measure the ensemble orientation of the host particles with a high degree of precision. Here, we show a methodology to obtain the photoluminescence polarizatio…
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Rare-earth phosphors exhibit unique luminescence polarization features originating from the anisotropic symmetry of the emitter ion's chemical environment. However, to take advantage of this peculiar property, it is necessary to control and measure the ensemble orientation of the host particles with a high degree of precision. Here, we show a methodology to obtain the photoluminescence polarization of Eu-doped LaPO4 nano rods assembled in an electrically modulated liquid-crystalline phase. We measure Eu3+ emission spectra for the three main optimal configurations (σ, π and α, depending on the direction of observation and the polarization axes) and use them as a reference for the nano rod orientation analysis. Based on the fact that flowing nano rods tend to orient along the shear strain profile, we use this orientation analysis to measure the local shear rate in a flowing liquid. The potential of this approach is then demonstrated through tomographic imaging of the shear rate distribution in a microfluidic system.
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Submitted 6 December, 2017;
originally announced December 2017.
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Localization landscape theory of disorder in semiconductors. III. Application to carrier transport and recombination in light emitting diodes
Authors:
Chi-Kang Li,
Marco Piccardo,
Li-Shuo Lu,
Svitlana Mayboroda,
Lucio Martinelli,
Jacques Peretti,
James S. Speck,
Claude Weisbuch,
Marcel Filoche,
Yuh-Renn Wu
Abstract:
This paper introduces a novel method to account for quantum disorder effects into the classical drift-diffusion model of semiconductor transport through the localization landscape theory. Quantum confinement and quantum tunneling in the disordered system change dramatically the energy barriers acting on the perpendicular transport of heterostructures. In addition they lead to percolative transport…
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This paper introduces a novel method to account for quantum disorder effects into the classical drift-diffusion model of semiconductor transport through the localization landscape theory. Quantum confinement and quantum tunneling in the disordered system change dramatically the energy barriers acting on the perpendicular transport of heterostructures. In addition they lead to percolative transport through paths of minimal energy in the 2D landscape of disordered energies of multiple 2D quantum wells. This model solves the carrier dynamics with quantum effects self-consistently and provides a computationally much faster solver when compared with the Schrödinger equation resolution. The theory also provides a good approximation to the density of states for the disordered system over the full range of energies required to account for transport at room-temperature. The current-voltage characteristics modeled by 3-D simulation of a full nitride-based light-emitting diode (LED) structure with compositional material fluctuations closely match the experimental behavior of high quality blue LEDs. The model allows also a fine analysis of the quantum effects involved in carrier transport through such complex heterostructures. Finally, details of carrier population and recombination in the different quantum wells are given.
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Submitted 18 April, 2017;
originally announced April 2017.
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Localization landscape theory of disorder in semiconductors II: Urbach tails of disordered quantum well layers
Authors:
Marco Piccardo,
Chi-Kang Li,
Yuh-Renn Wu,
James S. Speck,
Bastien Bonef,
Robert M. Farrell,
Marcel Filoche,
Lucio Martinelli,
Jacques Peretti,
Claude Weisbuch
Abstract:
Urbach tails in semiconductors are often associated to effects of compositional disorder. The Urbach tail observed in InGaN alloy quantum wells of solar cells and LEDs by biased photocurrent spectroscopy is shown to be characteristic of the ternary alloy disorder. The broadening of the absorption edge observed for quantum wells emitting from violet to green (indium content ranging from 0 to 28\%)…
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Urbach tails in semiconductors are often associated to effects of compositional disorder. The Urbach tail observed in InGaN alloy quantum wells of solar cells and LEDs by biased photocurrent spectroscopy is shown to be characteristic of the ternary alloy disorder. The broadening of the absorption edge observed for quantum wells emitting from violet to green (indium content ranging from 0 to 28\%) corresponds to a typical Urbach energy of 20~meV. A 3D absorption model is developed based on a recent theory of disorder-induced localization which provides the effective potential seen by the localized carriers without having to resort to the solution of the Schrödinger equation in a disordered potential. This model incorporating compositional disorder accounts well for the experimental broadening of the Urbach tail of the absorption edge. For energies below the Urbach tail of the InGaN quantum wells, type-II well-to-barrier transitions are observed and modeled. This contribution to the below bandgap absorption is particularly efficient in near-UV emitting quantum wells. When reverse biasing the device, the well-to-barrier below bandgap absorption exhibits a red shift, while the Urbach tail corresponding to the absorption within the quantum wells is blue shifted, due to the partial compensation of the internal piezoelectric fields by the external bias. The good agreement between the measured Urbach tail and its modeling by the new localization theory demonstrates the applicability of the latter to compositional disorder effects in nitride semiconductors.
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Submitted 18 April, 2017;
originally announced April 2017.
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Polarizers, optical bridges and Sagnac interferometers for nanoradian polarization rotation measurements
Authors:
Alistair Rowe,
Indira Zhaksylykova,
Guillaume Dilasser,
Yves Lassailly,
Jacques Peretti
Abstract:
The ability to measure nanoradian polarization rotations, $θ_F$, in the photon shot noise limit is investigated for partially crossed polarizers (PCP), a static Sagnac interferometer and an optical bridge, each of which can in principal be used in this limit with near equivalent figures-of-merit (FOM). In practice a bridge to PCP/Sagnac source noise rejection ratio of $1/4θ_F^2$ enables the bridge…
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The ability to measure nanoradian polarization rotations, $θ_F$, in the photon shot noise limit is investigated for partially crossed polarizers (PCP), a static Sagnac interferometer and an optical bridge, each of which can in principal be used in this limit with near equivalent figures-of-merit (FOM). In practice a bridge to PCP/Sagnac source noise rejection ratio of $1/4θ_F^2$ enables the bridge to operate in the photon shot noise limit even at high light intensities. The superior performance of the bridge is illustrated via the measurement of a 3 nrad rotation arising from an axial magnetic field of 0.9 nT applied to a terbium gallium garnet. While the Sagnac is functionally equivalent to the PCP in terms of the FOM, unlike the PCP it is able to discriminate between rotations with different time ($T$) and parity ($P$) symmetries. The Sagnac geometry implemented here is similar to that used elsewhere to detect non-reciprocal ($\overline{T}P$) rotations like those due to the Faraday effect. Using a Jones matrix approach, novel Sagnac geometries uniquely sensitive to non-reciprocal $\overline{TP}$ (e.g. magneto-electric or magneto-chiral) rotations, as well as to reciprocal rotations (e.g. due to linear birefringence, $TP$, or to chirality, $T\overline{P}$) are proposed.
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Submitted 26 April, 2017; v1 submitted 7 October, 2016;
originally announced October 2016.
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A Closer Look at the Light Induced Changes in the Visco-elastic Properties of Azobenze-Containing Polymers by Statistical Nanoindentation
Authors:
Luca Sorelli,
Filippo Fabbri,
Jessy Frech-Baronet,
Mario Fafard,
Anh-Duc Vu,
Thierry Gacoin,
Khalid Lahlil,
Yves Lassailly,
Lucio Martinelli,
Jacques Peretti
Abstract:
The mechanical properties of azobenzene-containing polymer films are statistically measured by instrumented nanoindentation experiment in the dark and under illumination in the absorption band of the azobenzene molecules, with special emphasis on the creep behavior and recoverability. We use Dispersed Red 1 azobenzene derivatives, which remain in the stable trans isomer state in the dark and form…
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The mechanical properties of azobenzene-containing polymer films are statistically measured by instrumented nanoindentation experiment in the dark and under illumination in the absorption band of the azobenzene molecules, with special emphasis on the creep behavior and recoverability. We use Dispersed Red 1 azobenzene derivatives, which remain in the stable trans isomer state in the dark and form a dynamical photo-stationary state between cis and trans isomer under illumination. Light induces a higher change in the film hardness than in the elastic stiffness, revealing the occurrence of a visco-plastic behavior of the film under illumination. Creep experiments performed at a constant load show a striking dissipative effect linked to the mass flowing under polarized illumination.
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Submitted 1 June, 2015;
originally announced June 2015.
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Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop
Authors:
Justin Iveland,
Lucio Martinelli,
Jacques Peretti,
James S. Speck,
Claude Weisbuch
Abstract:
We report on the unambiguous detection of Auger electrons by electron emission spectroscopy from a cesiated InGaN/GaN light emitting diode (LED) under electrical injection. Electron emission spectra were measured as a function of the current injected in the device. The appearance of high energy electron peaks simultaneously with an observed drop in electroluminescence efficiency shows that hot car…
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We report on the unambiguous detection of Auger electrons by electron emission spectroscopy from a cesiated InGaN/GaN light emitting diode (LED) under electrical injection. Electron emission spectra were measured as a function of the current injected in the device. The appearance of high energy electron peaks simultaneously with an observed drop in electroluminescence efficiency shows that hot carriers are being generated in the active region (InGaN quantum wells) by an Auger process. A linear correlation was measured between the high energy emitted electron current and the "droop current" - the missing component of the injected current for light emission. We conclude that the droop phenomenon in GaN LED originates from the excitation of Auger processes.
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Submitted 19 April, 2013;
originally announced April 2013.
