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Ultrafast all-optical manipulation of the charge-density-wave in VTe$_{2}$
Authors:
Manuel Tuniz,
Davide Soranzio,
Davide Bidoggia,
Denny Puntel,
Wibke Bronsch,
Steven L. Johnson,
Maria Peressi,
Fulvio Parmigiani,
Federico Cilento
Abstract:
The charge-density wave (CDW) phase in the layered transition-metal dichalcogenide VTe$_{2}$ is strongly coupled to the band inversion involving vanadium and tellurium orbitals. In particular, this coupling leads to a selective disappearance of the Dirac-type states that characterize the normal phase, when the CDW phase sets in. Here, by means of broadband time-resolved optical spectroscopy (TR-OS…
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The charge-density wave (CDW) phase in the layered transition-metal dichalcogenide VTe$_{2}$ is strongly coupled to the band inversion involving vanadium and tellurium orbitals. In particular, this coupling leads to a selective disappearance of the Dirac-type states that characterize the normal phase, when the CDW phase sets in. Here, by means of broadband time-resolved optical spectroscopy (TR-OS), we investigate the ultrafast reflectivity changes caused by collective and single particle excitations in the CDW ground state of VTe$_{2}$. Remarkably, our measurements show the presence of two collective (amplitude) modes of the CDW ground state. By applying a double-pulse excitation scheme, we show the possibility to manipulate these modes, demonstrating a more efficient way to control and perturb the CDW phase in VTe$_{2}$.
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Submitted 5 May, 2023;
originally announced May 2023.
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Probing the graphene/substrate interaction by electron tunneling decay
Authors:
Virginia Carnevali,
Alessandro Sala,
Pietro Biasin,
Mirco Panighel,
Giovanni Comelli,
Maria Peressi,
Cristina Africh
Abstract:
The electronic properties of graphene can be modified by the local interaction with a selected metal substrate. To probe this effect, Scanning Tunneling Microscopy is widely employed, particularly by means of local measurement via lock-in amplifier of the differential conductance and of the field emission resonance. In this article we propose an alternative, reliable method of probing the graphene…
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The electronic properties of graphene can be modified by the local interaction with a selected metal substrate. To probe this effect, Scanning Tunneling Microscopy is widely employed, particularly by means of local measurement via lock-in amplifier of the differential conductance and of the field emission resonance. In this article we propose an alternative, reliable method of probing the graphene/substrate interaction that is readily available to any STM apparatus. By testing the tunneling current as function of the tip/sample distance on nanostructured graphene on Ni(100), we demonstrate that I(z) spectroscopy can be quantitatively compared with Density Functional Theory calculations and can be used to assess the nature of the interaction between graphene and substrate. This method can expand the capabilities of standard STM systems to study graphene/substrate complexes, complementing standard topographic probing with spectroscopic information.
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Submitted 28 April, 2023; v1 submitted 27 April, 2023;
originally announced April 2023.
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Moiré patterns generated by stacked 2D lattices: a general algorithm to identify primitive coincidence cells
Authors:
Virginia Carnevali,
Stefano Marcantoni,
Maria Peressi
Abstract:
Two-dimensional materials on metallic surfaces or stacked one on top of the other can form a variety of moiré superstructures depending on the possible parameter and symmetry mismatch and misorientation angle. In most cases, such as incommensurate lattices or identical lattices but with a small twist angle, the common periodicity may be very large, thus making numerical simulations prohibitive. We…
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Two-dimensional materials on metallic surfaces or stacked one on top of the other can form a variety of moiré superstructures depending on the possible parameter and symmetry mismatch and misorientation angle. In most cases, such as incommensurate lattices or identical lattices but with a small twist angle, the common periodicity may be very large, thus making numerical simulations prohibitive. We propose here a general procedure to determine the minimal simulation cell which approximates, within a certain tolerance and a certain size, the primitive cell of the common superlattice, given the two interfacing lattices and the relative orientation angle. As case studies to validate our procedure, we report two applications of particular interest: the case of misaligned hexagonal/hexagonal identical lattices, describing a twisted graphene bilayer or a graphene monolayer grown on Ni(111), and the case of hexagonal/square lattices, describing for instance a graphene monolayer grown on Ni(100) surface. The first one, which has also analytic solutions, constitutes a solid benchmark for the algorithm; the second one shows that a very nice description of the experimental observations can be obtained also using the resulting relatively small coincidence cells.
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Submitted 19 April, 2021;
originally announced April 2021.
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Ultrafast broadband optical spectroscopy for quantifying subpicometric coherent atomic displacements in $WTe_2$
Authors:
Davide Soranzio,
Maria Peressi,
Robert J. Cava,
Fulvio Parmigiani,
Federico Cilento
Abstract:
Here we show how time-resolved broadband optical spectroscopy can be used to quantify, with femtometer resolution, the oscillation amplitudes of coherent phonons through a displacive model without free tuning parameters, except an overall scaling factor determined by comparison between experimental data and density functional theory calculations. $WTe_2$ is used to benchmark this approach. In this…
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Here we show how time-resolved broadband optical spectroscopy can be used to quantify, with femtometer resolution, the oscillation amplitudes of coherent phonons through a displacive model without free tuning parameters, except an overall scaling factor determined by comparison between experimental data and density functional theory calculations. $WTe_2$ is used to benchmark this approach. In this semimetal, the response is anisotropic and provides the spectral fingerprints of two $A_1$ optical phonons at $\sim$8 and $\sim$80 $cm^-$$^1$. In principle, this methodology can be extended to any material in which an ultrafast excitation triggers coherent lattice modes modulating the high-energy optical properties.
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Submitted 7 October, 2020;
originally announced October 2020.
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Operando atomic-scale study of graphene CVD growth at steps of polycrystalline nickel
Authors:
Zhiyu Zou,
Virginia Carnevali,
Laerte L. Patera,
Matteo Jugovac,
Cinzia Cepek,
Maria Peressi,
Giovanni Comelli,
Cristina Africh
Abstract:
An operando investigation of graphene growth on (100) grains of polycrystalline nickel (Ni) surfaces was performed by means of variable-temperature scanning tunneling microscopy complemented by density functional theory simulations. A clear description of the atomistic mechanisms ruling the graphene expansion process at the stepped regions of the substrate is provided, showing that different route…
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An operando investigation of graphene growth on (100) grains of polycrystalline nickel (Ni) surfaces was performed by means of variable-temperature scanning tunneling microscopy complemented by density functional theory simulations. A clear description of the atomistic mechanisms ruling the graphene expansion process at the stepped regions of the substrate is provided, showing that different routes can be followed, depending on the height of the steps to be crossed. When a growing graphene flake reaches a monoatomic step, it extends jointly with the underlying Ni layer; for higher Ni edges, a different process, involving step retraction and graphene landing, becomes active. At step bunches, the latter mechanism leads to a peculiar 'staircase formation' behavior, where terraces of equal width form under the overgrowing graphene, driven by a balance in the energy cost between C-Ni bond formation and stress accumulation in the carbon layer. Our results represent a step towards bridging the material gap in searching new strategies and methods for the optimization of chemical vapor deposition graphene production on polycrystalline metal surfaces.
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Submitted 24 January, 2020; v1 submitted 21 January, 2020;
originally announced January 2020.
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On the concentration of large deviations for fat tailed distributions, with application to financial data
Authors:
Mario Filiasi,
Giacomo Livan,
Matteo Marsili,
Maria Peressi,
Erik Vesselli,
Elia Zarinelli
Abstract:
Large deviations for fat tailed distributions, i.e. those that decay slower than exponential, are not only relatively likely, but they also occur in a rather peculiar way where a finite fraction of the whole sample deviation is concentrated on a single variable. The regime of large deviations is separated from the regime of typical fluctuations by a phase transition where the symmetry between the…
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Large deviations for fat tailed distributions, i.e. those that decay slower than exponential, are not only relatively likely, but they also occur in a rather peculiar way where a finite fraction of the whole sample deviation is concentrated on a single variable. The regime of large deviations is separated from the regime of typical fluctuations by a phase transition where the symmetry between the points in the sample is spontaneously broken. For stochastic processes with a fat tailed microscopic noise, this implies that while typical realizations are well described by a diffusion process with continuous sample paths, large deviation paths are typically discontinuous. For eigenvalues of random matrices with fat tailed distributed elements, a large deviation where the trace of the matrix is anomalously large concentrates on just a single eigenvalue, whereas in the thin tailed world the large deviation affects the whole distribution. These results find a natural application to finance. Since the price dynamics of financial stocks is characterized by fat tailed increments, large fluctuations of stock prices are expected to be realized by discrete jumps. Interestingly, we find that large excursions of prices are more likely realized by continuous drifts rather than by discontinuous jumps. Indeed, auto-correlations suppress the concentration of large deviations. Financial covariance matrices also exhibit an anomalously large eigenvalue, the market mode, as compared to the prediction of random matrix theory. We show that this is explained by a large deviation with excess covariance rather than by one with excess volatility.
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Submitted 18 June, 2014; v1 submitted 13 January, 2012;
originally announced January 2012.
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Computational and experimental imaging of Mn defects on GaAs (110) cross-sectional surface
Authors:
A. Stroppa,
X. Duan,
M. Peressi,
D. Furlanetto,
S. Modesti
Abstract:
We present a combined experimental and computational study of the (110) cross-sectional surface of Mn $δ$-doped GaAs samples. We focus our study on three different selected Mn defect configurations not previously studied in details, namely surface interstitial Mn, isolated and in pairs, and substitutional Mn atoms on cationic sites (Mn$_{\rm Ga}$) in the first subsurface layer. The sensitivity o…
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We present a combined experimental and computational study of the (110) cross-sectional surface of Mn $δ$-doped GaAs samples. We focus our study on three different selected Mn defect configurations not previously studied in details, namely surface interstitial Mn, isolated and in pairs, and substitutional Mn atoms on cationic sites (Mn$_{\rm Ga}$) in the first subsurface layer. The sensitivity of the STM images to the specific local environment allows to distinguish between Mn interstitials with nearest neighbor As atoms (Int$_{\rm As}$) rather than Ga atoms (Int$_{\rm Ga}$), and to identify the fingerprint of peculiar satellite features around subsurface substitutional Mn. The simulated STM maps for Int$_{\rm As}$, both isolated and in pairs, and Mn$_{\rm Ga}$ in the first subsurface layer are consistent with some experimental images hitherto not fully characterized.
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Submitted 11 April, 2007;
originally announced April 2007.
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Non-collinear Magnetic states of Mn5Ge3 compound
Authors:
A. Stroppa,
M. Peressi
Abstract:
Mn5Ge3 thin films epitaxially grown on Ge(111) exhibit metallic conductivity and strong ferromagnetism up to about 300 K. Recent experiments suggest a non-collinear spin structure. In order to gain deep insights into the magnetic structure of this compound, we have performed fully unconstrained ab-initio pseudopotential calculations within density functional theory, investigating the different m…
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Mn5Ge3 thin films epitaxially grown on Ge(111) exhibit metallic conductivity and strong ferromagnetism up to about 300 K. Recent experiments suggest a non-collinear spin structure. In order to gain deep insights into the magnetic structure of this compound, we have performed fully unconstrained ab-initio pseudopotential calculations within density functional theory, investigating the different magnetic states corresponding to Collinear (C) and Non-Collinear (NC) spin configurations. We focus on their relative stability under pressure and strain field. Under pressure, the C and NC configurations are degenerate, suggesting the possible occurrence of accidental magnetic degeneracy also in Mn5Ge3 real samples. We found a continuous transition from a ferromagnetic C low-spin state at small volumes to a NC high-spin state at higher volumes. Remarkably, the degeneracy is definitely removed under the effect of uniaxial strain: in particular, NC spin configurations is favoured under tensile uniaxial strain.
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Submitted 28 September, 2006; v1 submitted 7 August, 2006;
originally announced August 2006.
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ZnSe/GaAs(001) heterostructures with defected interfaces: structural, thermodynamic and electronic properties
Authors:
A. Stroppa,
M. Peressi
Abstract:
We have performed accurate \emph{ab--initio} pseudopotential calculations for the structural and electronic properties of ZnSe/GaAs(001) heterostructures with interface configurations accounting for charge neutrality prescriptions. Beside the simplest configurations with atomic interdiffusion we consider also some configurations characterized by As depletion and cation vacancies, motivated by th…
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We have performed accurate \emph{ab--initio} pseudopotential calculations for the structural and electronic properties of ZnSe/GaAs(001) heterostructures with interface configurations accounting for charge neutrality prescriptions. Beside the simplest configurations with atomic interdiffusion we consider also some configurations characterized by As depletion and cation vacancies, motivated by the recent successfull growth of ZnSe/GaAs pseudomorphic structures with minimum stacking fault density characterized by the presence of a defected (Zn,Ga)Se alloy in the interface region. We find that--under particular thermodynamic conditions--some defected configurations are favoured with respect to undefected ones with simple anion or cation mixing, and that the calculated band offsets for some defected structures are compatible with those measured. Although it is not possible to extract indications about the precise interface composition and vacancy concentration, our results support the experimental indication of (Zn,Ga)Se defected compounds in high-quality ZnSe/GaAs(001) heterojunctions with low native stacking fault density. The range of measured band offset suggests that different atoms at interfaces rearrange, with possible presence of vacancies, in such a way that not only local charges but also ionic dipoles are vanishing.
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Submitted 14 October, 2005; v1 submitted 29 July, 2005;
originally announced July 2005.
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Structural and magnetic properties of Mn-doped GaAs(110) surface
Authors:
A. Stroppa,
M. Peressi
Abstract:
We have investigated STM images of the (110) cross-sectional surface of Mn-doped GaAs using first principles total-energy pseudopotential calculations. We focus on configurations with Mn interstitial in the uppermost surface layers. In particular, we have found that Mn impurities, surrounded by Ga or As atoms, introduce in both cases strong local distortions in the GaAs(110) surface, with bond l…
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We have investigated STM images of the (110) cross-sectional surface of Mn-doped GaAs using first principles total-energy pseudopotential calculations. We focus on configurations with Mn interstitial in the uppermost surface layers. In particular, we have found that Mn impurities, surrounded by Ga or As atoms, introduce in both cases strong local distortions in the GaAs(110) surface, with bond length variations up to 8 % on surface and non-negligible relaxations effects propagating up to the third sub-surface layer. In both cases interstitial Mn induces a spin-polarization on its nearest neighbors, giving rise to a ferromagnetic Mn-As and to antiferromagnetic Mn-Ga configuration.
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Submitted 3 October, 2005; v1 submitted 29 July, 2005;
originally announced July 2005.
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Cross-sectional imaging of sharp Si interlayers embedded in gallium arsenide
Authors:
Xiangmei Duan,
Stefano Baroni,
Silvio Modesti,
Maria Peressi
Abstract:
We investigate the electronic properties of the (110) cross-sectional surface of Si-doped GaAs using first-principles techniques. We focus on do** configurations with an equal concentration of Si impurities in cationic and anionic sites, such as occurring in a self-compensating do** regime. In particular we study a bilayer of Si atoms uniformly distributed over two consecutive (001) atomic l…
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We investigate the electronic properties of the (110) cross-sectional surface of Si-doped GaAs using first-principles techniques. We focus on do** configurations with an equal concentration of Si impurities in cationic and anionic sites, such as occurring in a self-compensating do** regime. In particular we study a bilayer of Si atoms uniformly distributed over two consecutive (001) atomic layers. The simulated cross-sectional scanning tunneling microscopy images show a bright signal at negative bias, which is strongly attenuated when the bias is reversed. This scenario is consistent with experimental results which had been attributed to hitherto unidentified Si complexes.
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Submitted 23 March, 2005;
originally announced March 2005.
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Structural properties and stability of defected ZnSe/GaAs(001) interfaces
Authors:
A. Stroppa,
M. Peressi
Abstract:
Accurate ab-initio pseudopotential calculations within density functional theory in the LDA approximation have been performed for structural properties and stability of ZnSe/GaAs(001) defected heterostructures. There is a strong experimental evidence that ZnSe/GaAs heterostructures with minimum stacking fault density are related to the presence of a substantial concentration of Ga vacancies at i…
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Accurate ab-initio pseudopotential calculations within density functional theory in the LDA approximation have been performed for structural properties and stability of ZnSe/GaAs(001) defected heterostructures. There is a strong experimental evidence that ZnSe/GaAs heterostructures with minimum stacking fault density are related to the presence of a substantial concentration of Ga vacancies at interface. In order to gain insights into the still unknown microscopic maechanism governing their formation and stability, we compared the relative stability of some simple selected interface configurations, chosen taking into account charge neutrality prescription and allowing the presence of Ga vacancy next to the interface. Remarkably, our results show that, under particular thermodynamic conditions, some interfaces with vacancies are favoured over undefected ones.
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Submitted 13 October, 2004;
originally announced October 2004.
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Composition and strain dependence of band offsets at metamorphic In$_{x}$Ga$_{1-x}$As/In$_{y}$Al$_{1-y}$As heterostructures
Authors:
A. Stroppa,
M. Peressi
Abstract:
We have studied the In$_{x}$Ga$_{1-x}$As/In$_{y}$Al$_{1-y}$As (001) interface using first-principles ab-initio pseudopotential calculations, focusing on the effects of alloy composition and strain state on the electronic properties. In particular we estimate a valence band offset (VBO) of 0.11 eV (InGaAs higher), including spin-orbit and self-energy corrections, for a strain-compensated configur…
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We have studied the In$_{x}$Ga$_{1-x}$As/In$_{y}$Al$_{1-y}$As (001) interface using first-principles ab-initio pseudopotential calculations, focusing on the effects of alloy composition and strain state on the electronic properties. In particular we estimate a valence band offset (VBO) of 0.11 eV (InGaAs higher), including spin-orbit and self-energy corrections, for a strain-compensated configuration with homogenous composition $x=y=0.75$ on a lattice-matched substrate. Unintentional composition fluctuations which are typically limited to a few percent and different short-range order effects give rise only to small variations on the VBO, of the order of 0.1 eV or less, whereas intentional substantial changes in the alloys composition allow to achieve a high tunability of band offsets. We predict a VBO varying in a range of about 1.1 eV for interfaces between the pure arsenides in different strain states as extreme cases of composition variation at In$_{x}$Ga$_{1-x}$As/In$_{y}$Al$_{1-y}$As heterostructures.
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Submitted 16 March, 2005; v1 submitted 17 July, 2004;
originally announced July 2004.
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Electronic Properties of Mn-Compounds Under Strain
Authors:
A. Debernardi,
M. Peressi,
A. Baldereschi
Abstract:
We study the physical properties of MnAs under strain by using accurate first-principles pseudopotential calculations. Our results provide new insight on the physics of strained multilayer that are grown epitaxially on different lattice mismatched substrates and which are presently of interest for spintronic applications. We compute the strain dependence of the structural parameters, electronic…
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We study the physical properties of MnAs under strain by using accurate first-principles pseudopotential calculations. Our results provide new insight on the physics of strained multilayer that are grown epitaxially on different lattice mismatched substrates and which are presently of interest for spintronic applications. We compute the strain dependence of the structural parameters, electronic bands, density of states and magnetization. In the region of strain/stress that is easily directly accessible to measurements, the effects on these physical quantities are linear. We also address the case of uniaxial stress inducing sizeable and strongly non linear effects on electronic and magnetic properties.
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Submitted 10 October, 2002;
originally announced October 2002.
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Role of defects in the electronic properties of amorphous/crystalline Si interface
Authors:
Maria Peressi,
Luciano Colombo,
Stefano de Gironcoli
Abstract:
The mechanism determining the band alignment of the amorphous/crystalline
Si heterostructures is addressed with direct atomistic simulations of the interface performed using a hierarchical combination of various computational schemes ranging from classical model-potential molecular dynamics to ab-initio methods. We found that in coordination defect-free samples the band alignment is almost vani…
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The mechanism determining the band alignment of the amorphous/crystalline
Si heterostructures is addressed with direct atomistic simulations of the interface performed using a hierarchical combination of various computational schemes ranging from classical model-potential molecular dynamics to ab-initio methods. We found that in coordination defect-free samples the band alignment is almost vanishing and independent on interface details. In defect-rich samples, instead, the band alignment is sizeably different with respect to the defect-free case, but, remarkably, almost independent on the concentration of defects. We rationalize these findings within the theory of semiconductor interfaces.
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Submitted 14 May, 2001; v1 submitted 22 February, 2001;
originally announced February 2001.
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Electron localization in the insulating state: application to crystalline semiconductors
Authors:
Claudia Sgiarovello,
Maria Peressi,
Raffaele Resta
Abstract:
We measure electron localization in different materials by means of a ``localization tensor'', based on Berry phases and related quantities. We analyze its properties, and we actually compute such tensor from first principles for several tetrahedrally coordinated semiconductors. We discuss the trends in our calculated quantity, and we relate our findings to recent work by other authors. We also…
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We measure electron localization in different materials by means of a ``localization tensor'', based on Berry phases and related quantities. We analyze its properties, and we actually compute such tensor from first principles for several tetrahedrally coordinated semiconductors. We discuss the trends in our calculated quantity, and we relate our findings to recent work by other authors. We also address the ``hermaphrodite orbitals'', which are localized (Wannier-like) in a given direction, and delocalized (Bloch-like) in the two orthogonal directions: our tensor is related to the optimal localization of these orbitals. We also prove numerically that the decay of the optimally localized hermaphrodite orbitals is exponential.
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Submitted 12 May, 2001; v1 submitted 29 January, 2001;
originally announced January 2001.
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Band offsets and stability of BeTe/ZnSe (100) heterojunctions
Authors:
Fabio Bernardini,
Maria Peressi,
Vincenzo Fiorentini
Abstract:
We present ab-initio studies of band offsets, formation energy, and stability of (100) heterojunctions between (Zn,Be)(Se,Te) zincblende compounds, and in particular of the lattice-matched BeTe/ZnSe interface. Equal band offsets are found at Be/Se and Zn/Te abrupt interfaces, as well as at mixed interfaces, in agreement with the established understanding of band offsets at isovalent heterojuncti…
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We present ab-initio studies of band offsets, formation energy, and stability of (100) heterojunctions between (Zn,Be)(Se,Te) zincblende compounds, and in particular of the lattice-matched BeTe/ZnSe interface. Equal band offsets are found at Be/Se and Zn/Te abrupt interfaces, as well as at mixed interfaces, in agreement with the established understanding of band offsets at isovalent heterojunctions. Thermodynamical arguments suggest that islands of non-nominal composition may form at the interface, causing offset variations over about 0.8 eV depending on growth conditions. Our findings reconcile recent experiments on BeTe/ZnSe with the accepted theoretical description.
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Submitted 11 July, 2000;
originally announced July 2000.
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Wannier-functions characterization of floating bonds in a-Si
Authors:
M. Fornari,
N. Marzari,
M. Peressi,
A. Baldereschi
Abstract:
We investigate the electronic structure of over-coordinated defects in amorphous silicon via density-functional total-energy calculations, with the aim of understanding the relationship between topological and electronic properties on a microscopic scale. Maximally-localized Wannier functions are computed in order to characterize the bonding and the electronic properties of these defects. The fi…
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We investigate the electronic structure of over-coordinated defects in amorphous silicon via density-functional total-energy calculations, with the aim of understanding the relationship between topological and electronic properties on a microscopic scale. Maximally-localized Wannier functions are computed in order to characterize the bonding and the electronic properties of these defects. The five-fold coordination defects give rise to delocalized states extending over several nearest neighbors, and therefore to very polarizable bonds and anomalously high Born effective charges for the defective atoms.
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Submitted 30 November, 1999;
originally announced November 1999.
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Floating bonds and gap states in a-Si and a-Si:H from first principles calculations
Authors:
M. Fornari,
M. Peressi,
S. de Gironcoli,
A. Baldereschi
Abstract:
We study in detail by means of ab-initio pseudopotential calculations the electronic structure of five-fold coordinated (T_5) defects in a-Si and a-Si:H, also during their formation and their evolution upon hydrogenation. The atom-projected densities of states (DOS) and an accurate analysis of the valence charge distribution clearly indicate the fundamental contribution of T_5 defects in origina…
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We study in detail by means of ab-initio pseudopotential calculations the electronic structure of five-fold coordinated (T_5) defects in a-Si and a-Si:H, also during their formation and their evolution upon hydrogenation. The atom-projected densities of states (DOS) and an accurate analysis of the valence charge distribution clearly indicate the fundamental contribution of T_5 defects in originating gap states through their nearest neighbors. The interaction with hydrogen can reduce the DOS in the gap annihilating T_5 defects.
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Submitted 15 June, 1999;
originally announced June 1999.
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Coordination defects in a-Si and a-Si:H : a characterization from first principles calculations
Authors:
M. Peressi,
M. Fornari,
S. de Gironcoli,
L. De Santis,
A. Baldereschi
Abstract:
We study by means of first-principles pseudopotential method the coordination defects in a-Si and a-Si:H, also in their formation and their evolution upon hydrogen interaction. An accurate analysis of the valence charge distribution and of the ``electron localization function'' (ELF) allows to resolve possible ambiguities in the bonding configuration, and in particular to identify clearly three-…
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We study by means of first-principles pseudopotential method the coordination defects in a-Si and a-Si:H, also in their formation and their evolution upon hydrogen interaction. An accurate analysis of the valence charge distribution and of the ``electron localization function'' (ELF) allows to resolve possible ambiguities in the bonding configuration, and in particular to identify clearly three-fold (T_3) and five-fold (T_5) coordinated defects. We found that electronic states in the gap can be associated to both kind of defects, and that in both cases the interaction with hydrogen can reduce the density of states in the gap.
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Submitted 8 June, 1999;
originally announced June 1999.
