Showing 1–50 of 73 results for author: Perebeinos, V

Giant Second Harmonic Generation from Wafer-Scale Aligned Chiral Carbon Nanotubes

Authors: Rui Xu, Jacques Doumani, Viktor Labuntsov, Nina Hong, Anna-Christina Samaha, Weiran Tu, Fuyang Tay, Elizabeth Blackert, Jiaming Luo, Mario El Tahchi, Weilu Gao, Jun Lou, Yohei Yomogida, Kazuhiro Yanagi, Riichiro Saito, Vasili Perebeinos, Andrey Baydin, Junichiro Kono, Hanyu Zhu

Abstract: Chiral carbon nanotubes (CNTs) are direct-gap semiconductors with optical properties governed by one-dimensional excitons with enormous oscillator strengths. Each species of chiral CNTs has an enantiomeric pair of left- and right-handed CNTs with nearly identical properties, but enantiomer-dependent phenomena can emerge, especially in nonlinear optical processes. Theoretical studies have predicted… ▽ More Chiral carbon nanotubes (CNTs) are direct-gap semiconductors with optical properties governed by one-dimensional excitons with enormous oscillator strengths. Each species of chiral CNTs has an enantiomeric pair of left- and right-handed CNTs with nearly identical properties, but enantiomer-dependent phenomena can emerge, especially in nonlinear optical processes. Theoretical studies have predicted strong second-order nonlinearities for chiral CNTs, but there has been no experimental verification due to the lack of macroscopically ordered assemblies of single-enantiomer chiral CNTs. Here for the first time, we report the synthesis of centimeter-scale films of densely packed and aligned single-enantiomer chiral CNTs that exhibit micro-fabrication compatibility. We observe giant second harmonic generation (SHG) emission from the chiral CNT film, which originates from the intrinsic chirality and inversion symmetry breaking of the atomic structure of chiral CNTs. The observed value of the dominant element of the second-order nonlinear optical susceptibility tensor reaches $1.5\times 10^{3}$ pm/V at a pump wavelength of 1030 nm, corresponding to the lowest-energy excitonic resonance. Our calculations based on many-body theory correctly estimate the spectrum and magnitude of such excitonically enhanced optical nonlinearity. These results are promising for develo** scalable chiral-CNT electronics, nonlinear photonics and photonic quantum computing. △ Less

Submitted 5 July, 2024; originally announced July 2024.

Ultra-broadband bright light emission from a one-dimensional inorganic van der Waals material

Authors: Fateme Mahdikhany, Sean Driskill, Jeremy G. Philbrick, Davoud Adinehloo, Michael R. Koehler, David G. Mandrus, Takashi Taniguchi, Kenji Watanabe, Brian J. LeRoy, Oliver L. A. Monti, Vasili Perebeinos, Tai Kong, John R. Schaibley

Abstract: One-dimensional (1D) van der Waals materials have emerged as an intriguing playground to explore novel electronic and optical effects. We report on inorganic one-dimensional SbPS4 nanotubes bundles obtained via mechanical exfoliation from bulk crystals. The ability to mechanically exfoliate SbPS4 nanobundles offers the possibility of applying modern 2D material fabrication techniques to create mix… ▽ More One-dimensional (1D) van der Waals materials have emerged as an intriguing playground to explore novel electronic and optical effects. We report on inorganic one-dimensional SbPS4 nanotubes bundles obtained via mechanical exfoliation from bulk crystals. The ability to mechanically exfoliate SbPS4 nanobundles offers the possibility of applying modern 2D material fabrication techniques to create mixed-dimensional van der Waals heterostructures. We find that SbPS4 can readily be exfoliated to yield long (> 10 μm) nanobundles with thicknesses that range from of 1.3 - 200 nm. We investigated the optical response of semiconducting SbPS4 nanobundles and discovered that upon excitation with blue light, they emit bright and ultra-broadband red light with a quantum yield similar to that of hBN-encapsulated MoSe2. We discovered that the ultra-broadband red light emission is a result of a large ~1 eV exciton binding energy and a ~200 meV exciton self-trap** energy, unprecedented in previous material studies. Due to the bright and ultra-broadband light emission, we believe that this class of inorganic 1D van der Waals semiconductors has numerous potential applications including on-chip tunable nanolasers, and applications that require ultra-violet to visible light conversion such as lighting and sensing. Overall, our findings open avenues for harnessing the unique characteristics of these nanomaterials, advancing both fundamental research and practical optoelectronic applications. △ Less

Submitted 12 December, 2023; originally announced December 2023.

Wetting and Strain Engineering of 2D Materials on Nanopatterned Substrates

Authors: Davoud Adinehloo, Joshua R. Hendrickson, Vasili Perebeinos

Abstract: The fascinating realm of strain engineering and wetting transitions in two-dimensional (2D) materials takes place when placed on a two-dimensional array of nanopillars or one-dimensional rectangular grated substrates. Our investigation encompasses a diverse set of atomically thin 2D materials, including transition metal dichalcogenides, hexagonal boron nitride, and graphene, with a keen focus on t… ▽ More The fascinating realm of strain engineering and wetting transitions in two-dimensional (2D) materials takes place when placed on a two-dimensional array of nanopillars or one-dimensional rectangular grated substrates. Our investigation encompasses a diverse set of atomically thin 2D materials, including transition metal dichalcogenides, hexagonal boron nitride, and graphene, with a keen focus on the impact of van der Waals adhesion energies to the substrate on the wetting/dewetting behavior on nanopatterned substrates. We find a critical aspect ratio of the nanopillar or grating heights to the period of the pattern when the wetting/dewetting transition occurs. Furthermore, energy hysteresis analysis reveals dynamic detachment and re-engagement events during height adjustments, shedding light on energy barriers of 2D monolayer transferred on patterned substrates. Our findings offer avenues for strain engineering in 2D materials, leading to promising prospects for future technological applications. △ Less

Submitted 22 November, 2023; originally announced November 2023.

Journal ref: Nanoscale Advances 6.11 (2024) 2823-2829

Quantum Sensing of Single Phonons via Phonon Drag in Two-Dimensional Materials

Authors: Ali Kefayati, Jonathan P. Bird, Vasili Perebeinos

Abstract: The capacity to electrically detect phonons, ultimately at the single-phonon limit, is a key requirement for many schemes for phonon-based quantum computing, so-called quantum phononics. Here, we predict that by exploiting the strong coupling of their electrons to surface-polar phonons, van der Waals heterostructures can offer a suitable platform for phonon sensing, capable of resolving energy tra… ▽ More The capacity to electrically detect phonons, ultimately at the single-phonon limit, is a key requirement for many schemes for phonon-based quantum computing, so-called quantum phononics. Here, we predict that by exploiting the strong coupling of their electrons to surface-polar phonons, van der Waals heterostructures can offer a suitable platform for phonon sensing, capable of resolving energy transfer at the single-phonon level. The geometry we consider is one in which a drag momentum is exerted on electrons in a graphene layer, by a single out-of-equilibrium phonon in a dielectric layer of hexagonal boron nitride, giving rise to a measurable induced voltage ($V_{\rm drag}$). Our numerical solution of the Boltzmann Transport Equation shows that this drag voltage can reach a level of a few hundred microvolts per phonon, well above experimental detection limits. Furthermore, we predict that $V_{\rm drag}$ should be highly insensitive to the mobility of carriers in the graphene layer and to increasing the temperature to at least 300 K, offering the potential of a versatile material platform for single-phonon sensing. △ Less

Submitted 18 September, 2022; originally announced September 2022.

Comments: 13 pages, 6 figures

Journal ref: Phys. Rev. B 106, 155415 (2022)

Dynamical Control of Interlayer Excitons and Trions in WSe$_2$/Mo$_{0.5}$W$_{0.5}$Se$_2$ Heterobilayer via Tunable Near-Field Cavity

Authors: Yeonjeong Koo, Hyeongwoo Lee, Tatiana Ivanova, Ali Kefayati, Vasili Perebeinos, Ekaterina Khestanova, Vasily Kravtsov, Kyoung-Duck Park

Abstract: Emerging photo-induced excitonic processes in transition metal dichalcogenide (TMD) heterobilayers, e.g., coupling, dephasing, and energy transfer of intra- and inter-layer excitons, allow new opportunities for ultrathin photonic devices. Yet, with the associated large degree of spatial heterogeneity, understanding and controlling their complex competing interactions at the nanoscale remains a cha… ▽ More Emerging photo-induced excitonic processes in transition metal dichalcogenide (TMD) heterobilayers, e.g., coupling, dephasing, and energy transfer of intra- and inter-layer excitons, allow new opportunities for ultrathin photonic devices. Yet, with the associated large degree of spatial heterogeneity, understanding and controlling their complex competing interactions at the nanoscale remains a challenge. Here, we present an all-round dynamic control of intra- and inter-layer excitonic processes in a WSe$_2$/Mo$_{0.5}$W$_{0.5}$Se$_2$ heterobilayer using multifunctional tip-enhanced photoluminescence (TEPL) spectroscopy. Specifically, we control the radiative recombination path and emission rate, electronic bandgap energy, and neutral to charged exciton conversion with <20 nm spatial resolution in a reversible manner. It is achieved through the tip-induced engineering of Au tip-heterobilayer distance and interlayer distance, GPa scale local pressure, and plasmonic hot-electron injection respectively, with simultaneous spectroscopic TEPL measurements. This unique nano-opto-electro-mechanical control approach provides new strategies for develo** versatile nano-excitonic devices based on TMD heterobilayers. △ Less

Submitted 4 March, 2022; originally announced March 2022.

Non-local thermal transport modeling using the thermal distributor

Authors: Ali Kefayati, Philip B. Allen, Vasili Perebeinos

Abstract: Thermal transport in a quasi-ballistic regime is determined not only by the local temperature $T(r)$, or its gradient $\nabla T(r)$, but also by temperature distribution at neighboring points. For an accurate description of non-local effects on thermal transport, we employ the thermal distributor, $Θ(r,r')$, which provides the temperature response of the system at point $r$ to the heat input at po… ▽ More Thermal transport in a quasi-ballistic regime is determined not only by the local temperature $T(r)$, or its gradient $\nabla T(r)$, but also by temperature distribution at neighboring points. For an accurate description of non-local effects on thermal transport, we employ the thermal distributor, $Θ(r,r')$, which provides the temperature response of the system at point $r$ to the heat input at point $r'$. We determine the thermal distributors from the linearized Peierls-Boltzmann equation (LPBE) and the relaxation time approximation (RTA) of the Peierls-Boltzmann equation and employ them to describe thermal transport in quasi-ballistic graphene devices. △ Less

Submitted 22 May, 2022; v1 submitted 27 January, 2022; originally announced January 2022.

Comments: 15 pages, 7 figures

Journal ref: Phys. Rev. B 105, 235402 (2022)

Evidence for Phonon-Assisted Intertube Electronic Transport in an Armchair Carbon Nanotube Film

Authors: Davoud Adinehloo, Weilu Gao, Ali Mojibpour, Junichiro Kono, Vasili Perebeinos

Abstract: The electrical conductivity of a macroscopic assembly of nanomaterials is determined through a complex interplay of electronic transport within and between constituent nano-objects. Phonons play dual roles in this situation: their increased populations tend to reduce the conductivity via electron scattering while they can boost the conductivity by assisting electrons to propagate through the poten… ▽ More The electrical conductivity of a macroscopic assembly of nanomaterials is determined through a complex interplay of electronic transport within and between constituent nano-objects. Phonons play dual roles in this situation: their increased populations tend to reduce the conductivity via electron scattering while they can boost the conductivity by assisting electrons to propagate through the potential-energy landscape. Here, we identify a phonon-assisted coherent electron transport process between neighboring nanotubes in temperature-dependent conductivity measurements on a macroscopic film of armchair single-wall carbon nanotubes. Through atomistic modeling of electronic states and calculations of both electronic and phonon-assisted junction conductances, we conclude that phonon-assisted conductance is the dominant mechanism for the observed high-temperature transport. The unambiguous manifestation of coherent intertube dynamics proves a single-chirality armchair nanotube film to be a unique macroscopic solid-state ensemble of nano-objects promising for the development of room-temperature coherent electronic devices. △ Less

Submitted 17 January, 2022; originally announced January 2022.

Comments: 6 pages, 3 figures

Entanglement generation in a quantum network with finite quantum memory lifetime

Authors: Vyacheslav Semenenko, Xuedong Hu, Eden Figueroa, Vasili Perebeinos

Abstract: We simulate entanglement sharing between two end-nodes of a quantum network using SeQUeNCe, an open-source simulation package for quantum networks. Our focus is on the rate of entanglement generation between the end-nodes with many repeaters with a finite quantum memory lifetime. Our findings demonstrate that the performance of quantum connection depends highly on the entanglement management proto… ▽ More We simulate entanglement sharing between two end-nodes of a quantum network using SeQUeNCe, an open-source simulation package for quantum networks. Our focus is on the rate of entanglement generation between the end-nodes with many repeaters with a finite quantum memory lifetime. Our findings demonstrate that the performance of quantum connection depends highly on the entanglement management protocol scheduling entanglement generation and swap**, resulting in the final end-to-end entanglement. Numerical and analytical simulations show limits of connection performance for a given number of repeaters involved, memory lifetimes for a given distance between the end nodes, and an entanglement management protocol. △ Less

Submitted 20 March, 2022; v1 submitted 3 October, 2021; originally announced October 2021.

Comments: 9 pages, 5 figures

Journal ref: AVS Quantum Sci. 4, 012002 (2022)

Nonlinear spectroscopy of excitonic states in transition metal dichalcogenides

Authors: Yaroslav V. Zhumagulov, Vyacheslav D. Neverov, Alexander E. Lukyanov, Dmitry R. Gulevich, Andrey V. Krasavin, Alexei Vagov, Vasili Perebeinos

Abstract: Second-harmonic generation (SHG) is a well-known nonlinear spectroscopy method to probe electronic structure, specifically, in transition metal dichalcogenide (TMDC) monolayers. This work investigates the nonlinear dynamics of a strongly excited TMDC monolayer by solving the time evolution equations for the density matrix. It is shown that the presence of excitons qualitatively changes the nonline… ▽ More Second-harmonic generation (SHG) is a well-known nonlinear spectroscopy method to probe electronic structure, specifically, in transition metal dichalcogenide (TMDC) monolayers. This work investigates the nonlinear dynamics of a strongly excited TMDC monolayer by solving the time evolution equations for the density matrix. It is shown that the presence of excitons qualitatively changes the nonlinear dynamics leading, in particular, to a huge enhancement of the nonlinear signal as a function of the dielectric environment. It is also shown that the SHG polarization angular diagram and its dependence on the driving strength are very sensitive to the type of exciton state. This sensitivity suggests that SHG spectroscopy is a convenient tool for analyzing the fine structure of excitonic states. △ Less

Submitted 31 March, 2022; v1 submitted 23 September, 2021; originally announced September 2021.

Comments: 13 pages, 5 figures

Journal ref: Phys. Rev. B 105, 115436 (2022)

Simulation of Scanning Near-Field Optical Microscopy Spectra of 1D Plasmonic Graphene Junctions

Authors: Vyacheslav Semenenko, Mengkun Liu, Vasili Perebeinos

Abstract: We present numerical simulations of scattering-type Scanning Near-Field Optical Microscopy (s-SNOM) of 1D plasmonic graphene junctions. A comprehensive analysis of simulated s-SNOM spectra is performed for three types of junctions. We find conditions when the conventional interpretation of the plasmon reflection coefficients from s-SNOM measurements does not apply. Our results are applicable to ot… ▽ More We present numerical simulations of scattering-type Scanning Near-Field Optical Microscopy (s-SNOM) of 1D plasmonic graphene junctions. A comprehensive analysis of simulated s-SNOM spectra is performed for three types of junctions. We find conditions when the conventional interpretation of the plasmon reflection coefficients from s-SNOM measurements does not apply. Our results are applicable to other conducting 2D materials and provide a comprehensive understanding of the s-SNOM techniques for probing local transport properties of 2D materials. △ Less

Submitted 25 August, 2021; originally announced August 2021.

Comments: 15 pages, 6 figures

Journal ref: Optics Express 30, 9000 (2022)

Microscopic theory of exciton and trion polaritons in doped monolayers of transition metal dichalcogenides

Authors: Y. V. Zhumagulov, S. Chiavazzo, D. R. Gulevich, V. Perebeinos, I. A. Shelykh, O. Kyriienko

Abstract: We study a doped transition metal dichalcogenide (TMDC) monolayer in an optical microcavity. Using the microscopic theory, we simulate spectra of quasiparticles emerging due to the interaction of material excitations and a high-finesse optical mode, providing a comprehensive analysis of optical spectra as a function of Fermi energy and predicting several modes in the strong light-matter coupling r… ▽ More We study a doped transition metal dichalcogenide (TMDC) monolayer in an optical microcavity. Using the microscopic theory, we simulate spectra of quasiparticles emerging due to the interaction of material excitations and a high-finesse optical mode, providing a comprehensive analysis of optical spectra as a function of Fermi energy and predicting several modes in the strong light-matter coupling regime. In addition to exciton-polaritons and trion-polaritons, we report polaritonic modes that become bright due to the interaction of excitons with free carriers. At large do**, we reveal strongly coupled modes corresponding to excited trions that hybridize with a cavity mode. We also demonstrate that rising the carrier concentration enables to change the nature of the system's ground state from the dark to the bright one. Our results offer a unified description of polaritonic modes in a wide range of free electron densities. △ Less

Submitted 27 April, 2022; v1 submitted 14 July, 2021; originally announced July 2021.

Electrostatic control of the trion fine structure in transition metal dichalcogenide monolayers

Authors: Yaroslav V. Zhumagulov, Alexei Vagov, Dmitry R. Gulevich, Vasili Perebeinos

Abstract: Charged excitons (trions) are essential for the optical spectra in low dimensional doped monolayers (ML) of transitional metal dichalcogenides (TMDC). Using a direct diagonalization of the three-body Hamiltonian, we explore the low-lying trion states in four types of TMDC MLs. We show that the trions fine structure results from the interplay between the spin-valley fine structure of the single-par… ▽ More Charged excitons (trions) are essential for the optical spectra in low dimensional doped monolayers (ML) of transitional metal dichalcogenides (TMDC). Using a direct diagonalization of the three-body Hamiltonian, we explore the low-lying trion states in four types of TMDC MLs. We show that the trions fine structure results from the interplay between the spin-valley fine structure of the single-particle bands and the exchange interaction between the composing particles. We demonstrate that by variations of the do** and dielectric environment, trion energy fine structure can be tuned, leading to anti-crossing of the bright and dark states with substantial implications for the optical spectra of TMDC MLs. △ Less

Submitted 23 April, 2021; originally announced April 2021.

Negative Differential Resistance in Carbon-Based Nanostructures

Authors: S. A. Evlashin, M. A. Tarkhov, D. A. Chernodubov, A. V. Inyushkin, A. A. Pilevsky, P. V. Dyakonov, A. A. Pavlov, N. V. Suetin, I. S. Akhatov, V. Perebeinos

Abstract: Nonlinear electrical properties, such as negative differential resistance (NDR), are essential in numerous electrical circuits, including memristors. Several physical origins have been proposed to lead to the NDR phenomena in semiconductor devices in the last more than half a century. Here, we report NDR behavior formation in randomly oriented graphene-like nanostructures up to 37 K and high on-cu… ▽ More Nonlinear electrical properties, such as negative differential resistance (NDR), are essential in numerous electrical circuits, including memristors. Several physical origins have been proposed to lead to the NDR phenomena in semiconductor devices in the last more than half a century. Here, we report NDR behavior formation in randomly oriented graphene-like nanostructures up to 37 K and high on-current density up to 10^5 A/cm^2. Our modeling of the current-voltage characteristics, including the self-heating effects, suggests that strong temperature dependence of the low-bias resistance is responsible for the nonlinear electrical behavior. Our findings open opportunities for the practical realization of the on-demand NDR behavior in nanostructures of 2D and 3D material-based devices via heat management in the conducting films and the underlying substrates. △ Less

Submitted 10 May, 2021; v1 submitted 13 April, 2021; originally announced April 2021.

Comments: 17 pages, 4 figures, 2 tables

Journal ref: Phys. Rev. Applied 15, 054057 (2021)

Band Structure Dependent Electronic Localization in Macroscopic Films of Single-Chirality Single-Wall Carbon Nanotubes

Authors: Weilu Gao, Davoud Adinehloo, Ali Mojibpour, Yohei Yomogida, Atsushi Hirano, Takeshi Tanaka, Hiromichi Kataura, Ming Zheng, Vasili Perebeinos, Junichiro Kono

Abstract: Significant understanding has been achieved over the last few decades regarding chirality-dependent properties of single-wall carbon nanotubes (SWCNTs), primarily through single-tube studies. However, macroscopic manifestations of chirality dependence have been limited, especially in electronic transport, despite the fact that such distinct behaviors are needed for many applications of SWCNT-based… ▽ More Significant understanding has been achieved over the last few decades regarding chirality-dependent properties of single-wall carbon nanotubes (SWCNTs), primarily through single-tube studies. However, macroscopic manifestations of chirality dependence have been limited, especially in electronic transport, despite the fact that such distinct behaviors are needed for many applications of SWCNT-based devices. In addition, develo** reliable transport theory is challenging since a description of localization phenomena in an assembly of nanoobjects requires precise knowledge of disorder on multiple spatial scales, particularly if the ensemble is heterogeneous. Here, we report an observation of pronounced chirality-dependent electronic localization in temperature and magnetic field dependent conductivity measurements on macroscopic films of single-chirality SWCNTs. The samples included large-gap semiconducting (6,5) and (10,3) films, narrow-gap semiconducting (7,4) and (8,5) films, and armchair metallic (6,6) films. Experimental data and theoretical calculations revealed Mott variable-range-hop** dominated transport in all samples, while localization lengths fall into three distinct categories depending on their band gaps. Armchair films have the largest localization length. Our detailed analyses on electronic transport properties of single-chirality SWCNT films provide significant new insight into electronic transport in ensembles of nanoobjects, offering foundations for designing and deploying macroscopic SWCNT solid-state devices. △ Less

Submitted 20 September, 2021; v1 submitted 19 January, 2021; originally announced January 2021.

Comments: 4 figures, 1 table, 25 pages

Journal ref: Carbon 183, 774 (2021)

Trion induced photoluminescence of a doped MoS2 monolayer

Authors: Yaroslav V. Zhumagulov, Alexei Vagov, Paulo E. Faria Junior, Dmitry R. Gulevich, Vasili Perebeinos

Abstract: We demonstrate that the temperature and do** dependencies of the photoluminescence (PL) spectra of a doped MoS2 monolayer have several peculiar characteristics defined by trion radiative decay. While only zero-momentum exciton states are coupled to light, radiative recombination of non-zero momentum trions is also allowed. This leads to an asymmetric broadening of the trion spectral peak and red… ▽ More We demonstrate that the temperature and do** dependencies of the photoluminescence (PL) spectra of a doped MoS2 monolayer have several peculiar characteristics defined by trion radiative decay. While only zero-momentum exciton states are coupled to light, radiative recombination of non-zero momentum trions is also allowed. This leads to an asymmetric broadening of the trion spectral peak and redshift of the emitted light with increasing temperature. The lowest energy trion state is dark, which is manifested by the sharply non-monotonic temperature dependence of the PL intensity. Our calculations combine the Dirac model for the single-particle states, the parameters for which are obtained from the first principle calculations, and the direct solution of the three-particle problem within the Tamm-Dancoff approximation. The numerical results are well captured by a simple model that yields analytical expressions for the temperature dependencies of the PL spectra. △ Less

Submitted 12 February, 2021; v1 submitted 19 May, 2020; originally announced May 2020.

Comments: 10 pages, 6 figures

Journal ref: J. Chem. Phys. 153, 044132 (2020)

Three-particle states and brightening of intervalley excitons in a doped MoS$_2$ monolayer

Authors: Yaroslav V. Zhumagulov, Alexei Vagov, Natalia Yu. Senkevich, Dmitry R. Gulevich, Vasili Perebeinos

Abstract: Optical spectra of two-dimensional transition-metal dichalcogenides (TMDC) are influenced by complex multi-particle excitonic states. Their theoretical analysis requires solving the many-body problem, which in most cases, is prohibitively complicated. In this work, we calculate the optical spectra by exact diagonalization of the three-particle Hamiltonian within the Tamm-Dancoff approximation wher… ▽ More Optical spectra of two-dimensional transition-metal dichalcogenides (TMDC) are influenced by complex multi-particle excitonic states. Their theoretical analysis requires solving the many-body problem, which in most cases, is prohibitively complicated. In this work, we calculate the optical spectra by exact diagonalization of the three-particle Hamiltonian within the Tamm-Dancoff approximation where the do** effects are accounted for via the Pauli blocking mechanism, modelled by a discretized mesh in the momentum space. The single-particle basis is extracted from the {\it ab initio} calculations. Obtained three-particle eigenstates and the corresponding transition dipole matrix elements are used to calculate the linear absorption spectra as a function of the do** level. Results for negatively doped MoS$_2$ monolayer (ML) are in an excellent quantitative agreement with the available experimental data, validating our approach. The results predict additional spectral features due to the intervalley exciton that is optically dark in an undoped ML but is brightened by the do**. Our approach can be applied to a plethora of other atomically thin semiconductors, where the do** induced brightening of the many-particle states is also anticipated. △ Less

Submitted 22 June, 2020; v1 submitted 20 February, 2020; originally announced February 2020.

Journal ref: Phys. Rev. B 101, 245433 (2020)

Prominent room temperature valley polarization in WS2/graphene heterostructures grown by chemical vapor deposition

Authors: Ioannis Paradisanos, Kathleen M. McCreary, Davoud Adinehloo, Leonidas Mouchliadis, Jeremy T. Robinson, Hsun-Jen Chuang, Aubrey T. Hanbicki, Vasili Perebeinos, Berend T. Jonker, Emmanuel Stratakis, George Kioseoglou

Abstract: We examine different cases of heterostructures consisting of WS2 monolayers grown by chemical vapor deposition (CVD) as the optically active material. We show that the degree of valley polarization of WS2 is considerably influenced by the material type used to form the heterostructure. Our results suggest the interaction between WS2 and graphene (WS2/Gr) has a strong effect on the temperature depe… ▽ More We examine different cases of heterostructures consisting of WS2 monolayers grown by chemical vapor deposition (CVD) as the optically active material. We show that the degree of valley polarization of WS2 is considerably influenced by the material type used to form the heterostructure. Our results suggest the interaction between WS2 and graphene (WS2/Gr) has a strong effect on the temperature dependent depolarization (i.e. decrease of polarization with increasing temperature), with polarization degrees reaching 24% at room temperature under near-resonant excitation. This contrasts to hBN- encapsulated WS2, which exhibits a room temperature polarization degree of only 11%. The observed low depolarization rate in WS2/Gr heterostructure is attributed to the nearly temperature independent scattering rate due to phonons and fast charge and energy transfer processes from WS2 to graphene. Significant variations in the degree of polarization are also observed at 4K between the different heterostructure configurations. Intervalley hole scattering in the valence band proximity between the K and Γ points of WS2 is sensitive to the immediate environment, leading to the observed variations. △ Less

Submitted 1 December, 2020; v1 submitted 11 October, 2019; originally announced October 2019.

Comments: 35 pages, 12 figures

Journal ref: Appl. Phys. Lett. 116, 203102 (2020)

Nonadiabatic time-dependent density-functional theory at the cost of adiabatic local density approximation

Authors: Dmitry R. Gulevich, Yaroslav V. Zhumagulov, Alexei V. Vagov, Vasili Perebeinos

Abstract: We propose a computationally efficient approach to the nonadiabatic time-dependent density functional theory (TDDFT) which is based on a representation of the frequency-dependent exchange correlation kernel as a response of a set of damped oscillators. The requirements to computational resources needed to implement our approach do not differ from those of the standard real-time TDDFT in the adiaba… ▽ More We propose a computationally efficient approach to the nonadiabatic time-dependent density functional theory (TDDFT) which is based on a representation of the frequency-dependent exchange correlation kernel as a response of a set of damped oscillators. The requirements to computational resources needed to implement our approach do not differ from those of the standard real-time TDDFT in the adiabatic local density approximation (ALDA). Thus, our result offers an exciting opportunity to take into account temporal nonlocality and memory effects in calculations with TDDFT in quantum chemistry and solid state physics for unprecedentedly low costs. △ Less

Submitted 28 August, 2019; originally announced August 2019.

Comments: 10 pages, 5 figures

Journal ref: Phys. Rev. B 100, 241109 (2019)

Thermal light emission from monolayer MoS2

Authors: Lukas Dobusch, Simone Schuler, Vasili Perebeinos, Thomas Mueller

Abstract: Because of their strong excitonic photoluminescence (PL) and electroluminescence (EL), together with an excellent electronic tunability, transition metal dichalcogenide (TMD) semiconductors are promising candidates for novel optoelectronic devices. In recent years, several concepts for light emission from two-dimensional (2D) materials have been demonstrated. Most of these concepts are based on th… ▽ More Because of their strong excitonic photoluminescence (PL) and electroluminescence (EL), together with an excellent electronic tunability, transition metal dichalcogenide (TMD) semiconductors are promising candidates for novel optoelectronic devices. In recent years, several concepts for light emission from two-dimensional (2D) materials have been demonstrated. Most of these concepts are based on the recombination of electrons and holes in a pn-junction, either along the lateral direction using split-gate geometries in combination with monolayer TMDs, or by precisely stacking different 2D semiconductors on top of each other, in order to fabricate vertical van der Waals heterostructures, working as light-emitting diodes (LEDs). Further, EL was also observed along the channel of ionic liquid gated field-effect transistors (FETs) under ambipolar carrier injection. Another mechanism, which has been studied extensively in carbon nanotubes (CNTs) and more recently also in graphene, is thermal light emission as a result of Joule heating. Although the resulting efficiencies are smaller than that of LEDs based on ambipolar electron-hole injection, these experiments provide valuable insights into microscopic processes, such as electron-phonon and phonon-phonon interactions, and the behavior of low-dimensional materials under strong bias in general. △ Less

Submitted 7 March, 2019; originally announced March 2019.

Comments: 27 pages, 13 figures

Journal ref: Advanced Materials 29, 1701304 (2017)

Temperature in a Peierls-Boltzmann Treatment of Nonlocal Phonon Heat Transport

Authors: Philip B. Allen, Vasili Perebeinos

Abstract: In nonmagnetic insulators, phonons are the carriers of heat. If heat enters in a region and temperature is measured at a point within phonon mean free paths of the heated region, ballistic propagation causes a nonlocal relation between local temperature and heat insertion. This paper focusses on the solution of the exact Peierls-Boltzmann equation (PBE), the relaxation time approximation (RTA), an… ▽ More In nonmagnetic insulators, phonons are the carriers of heat. If heat enters in a region and temperature is measured at a point within phonon mean free paths of the heated region, ballistic propagation causes a nonlocal relation between local temperature and heat insertion. This paper focusses on the solution of the exact Peierls-Boltzmann equation (PBE), the relaxation time approximation (RTA), and the definition of local temperature needed in both cases. The concept of a non-local "thermal susceptibility" (analogous to charge susceptibility) is defined. A formal solution is obtained for heating with a single Fourier component $P(\vec{r},t)=P_0 \exp(i\vec{k}\cdot\vec{r}-iωt)$, where $P$ is the local rate of heating). The results are illustrated by Debye model calculations in RTA for a three-dimensional periodic system where heat is added and removed with $P(\vec{r},t)=P(x)$ from isolated evenly spaced segments with period $L$ in $x$. The ratio $L/\ell_{\rm min}$ is varied from 6 to $\infty$, where $\ell_{\rm min}$ is the minimum mean free path. The Debye phonons are assumed to scatter anharmonically with mean free paths varying as $\ell_{\rm min}(q_D/q)^2$ where $q_D$ is the Debye wavevector. The results illustrate the expected local (diffusive) response for $\ell_{\rm min}\ll L$, and a diffusive to ballistic crossover as $\ell_{\rm min}$ increases toward the scale $L$. The results also illustrate the confusing problem of temperature definition. This confusion is not present in the exact treatment but is fundamental in RTA. △ Less

Submitted 18 August, 2018; v1 submitted 28 March, 2018; originally announced March 2018.

Comments: 12 pages including 7 figures. The newer version posted in August 2018 has a modified discussion and additional references

Journal ref: Phys. Rev. B 98, 085427 (2018)

Bandstructure and Contact Resistance of Carbon Nanotubes Deformed by the Metal Contact

Authors: Roohollah Hafizi, Jerry Tersoff, Vasili Perebeinos

Abstract: Capillary and van der Waals forces cause nanotubes to deform or even collapse under metal contacts. Using ab-initio bandstructure calculations, we find that these deformations reduce the bandgap by as much as 30\%, while fully collapsed nanotubes become metallic. Moreover degeneracy lifting, due to the broken axial symmetry and wavefunctions mismatch between the fully collapsed and the round porti… ▽ More Capillary and van der Waals forces cause nanotubes to deform or even collapse under metal contacts. Using ab-initio bandstructure calculations, we find that these deformations reduce the bandgap by as much as 30\%, while fully collapsed nanotubes become metallic. Moreover degeneracy lifting, due to the broken axial symmetry and wavefunctions mismatch between the fully collapsed and the round portions of a CNT, leads to a three times higher contact resistance. The latter we demonstrate by contact resistance calculations within the tight-binding approach. △ Less

Submitted 12 January, 2018; originally announced January 2018.

Comments: 5 pages, 6 figures

Journal ref: Phys. Rev. Lett. 119, 207701 (2017)

Phonon-limited carrier mobility in monolayer Black Phosphorous

Authors: Yuri Trushkov, Vasili Perebeinos

Abstract: We calculate an electron-phonon scattering and intrinsic transport properties of black phosphorus monolayer using tight-binding and Boltzmann treatments as a function of temperature, carrier density, and electric field. The low-field mobility shows weak dependence on density and, at room temperature, falls in the range of 300 - 1000 cm^2/Vs in the armchair direction and 50 - 120 cm^2/Vs in the zig… ▽ More We calculate an electron-phonon scattering and intrinsic transport properties of black phosphorus monolayer using tight-binding and Boltzmann treatments as a function of temperature, carrier density, and electric field. The low-field mobility shows weak dependence on density and, at room temperature, falls in the range of 300 - 1000 cm^2/Vs in the armchair direction and 50 - 120 cm^2/Vs in the zig-zag direction with the anisotropy due to an effective mass difference. At high fields, drift velocity is linear with electric field up to 1 - 2 V/micron reaching values of 10^7 cm/s in the armchair direction, unless self-heating effects are included. △ Less

Submitted 4 April, 2017; originally announced April 2017.

Comments: 6 pages, 7 firgues

Journal ref: Phys. Rev. B 95, 075436 (2017)

Excitonic Stark effect in MoS$_2$ monolayers

Authors: Benedikt Scharf, Tobias Frank, Martin Gmitra, Jaroslav Fabian, Igor Žutić, Vasili Perebeinos

Abstract: We theoretically investigate excitons in MoS$_2$ monolayers in an applied in-plane electric field. Tight-binding and Bethe-Salpeter equation calculations predict a quadratic Stark shift, of the order of a few meV for fields of 10 V/$μ$m, in the linear absorption spectra. The spectral weight of the main exciton peaks decreases by a few percent with an increasing electric field due to the exciton fi… ▽ More We theoretically investigate excitons in MoS$_2$ monolayers in an applied in-plane electric field. Tight-binding and Bethe-Salpeter equation calculations predict a quadratic Stark shift, of the order of a few meV for fields of 10 V/$μ$m, in the linear absorption spectra. The spectral weight of the main exciton peaks decreases by a few percent with an increasing electric field due to the exciton field ionization into free carriers as reflected in the exciton wave functions. Subpicosecond exciton decay lifetimes at fields of a few tens of V/$μ$m could be utilized in solar energy harvesting and photodetection. We find simple scaling relations of the exciton binding, radius, and oscillator strength with the dielectric environment and an electric field, which provides a path to engineering the MoS$_2$ electro-optical response. △ Less

Submitted 27 December, 2016; v1 submitted 13 June, 2016; originally announced June 2016.

Comments: 9 pages, 7 figures

Journal ref: Phys. Rev. B 94, 245434 (2016)

Schottky-to-Ohmic Crossover in Carbon Nanotube Transistor Contacts

Authors: Vasili Perebeinos, Jerry Tersoff, Wilfried Haensch

Abstract: For carbon nanotube transistors, as for graphene, the electrical contacts are a key factor limiting device performance. We calculate the device characteristics as a function of nanotube diameter and metal workfunction. Although the on-state current varies continuously, the transfer characteristics reveal a relatively abrupt crossover from Schottky to ohmic contacts. We find that typical high-perfo… ▽ More For carbon nanotube transistors, as for graphene, the electrical contacts are a key factor limiting device performance. We calculate the device characteristics as a function of nanotube diameter and metal workfunction. Although the on-state current varies continuously, the transfer characteristics reveal a relatively abrupt crossover from Schottky to ohmic contacts. We find that typical high-performance devices fall surprisingly close to the crossover. Surprisingly, tunneling plays an important role even in this regime, so that current fails to saturate with gate voltage as was expected due to "source exhaustion". △ Less

Submitted 27 August, 2013; originally announced August 2013.

Comments: 6 pages, 4 figures

Tunable electronic correlation effects in nanotube-light interactions

Authors: Yuhei Miyauchi, Zhengyi Zhang, Mitsuhide Takekoshi, Yuh Tomio, Hidekatsu Suzuura, Vasili Perebeinos, Vikram V. Deshpande, Chenguang Lu, Stéphane Berciaud, Philip Kim, James Hone, Tony F. Heinz

Abstract: Electronic many-body correlation effects in one-dimensional (1D) systems such as carbon nanotubes have been predicted to modify strongly the nature of photoexcited states. Here we directly probe this effect using broadband elastic light scattering from individual suspended carbon nanotubes under electrostatic gating conditions. We observe significant shifts in optical transition energies, as well… ▽ More Electronic many-body correlation effects in one-dimensional (1D) systems such as carbon nanotubes have been predicted to modify strongly the nature of photoexcited states. Here we directly probe this effect using broadband elastic light scattering from individual suspended carbon nanotubes under electrostatic gating conditions. We observe significant shifts in optical transition energies, as well as line broadening, as the carrier density is increased. The results demonstrate the differing role of screening of many-body electronic interactions on the macroscopic and microscopic length scales, a feature inherent to quasi-1D systems. Our findings further demonstrate the possibility of electrical tuning of optical transitions and provide a basis for understanding of various optical phenomena in carbon nanotubes and other quasi-1D systems in the presence of charge carrier do**. △ Less

Submitted 2 September, 2013; v1 submitted 25 August, 2013; originally announced August 2013.

Comments: 18 pages, 4 figures, plus supplemental material of 11 pages and 3 figures

Journal ref: Phys. Rev. B 92, 205407 (2015)

Magneto-optical conductivity of graphene on polar substrates

Authors: Benedikt Scharf, Vasili Perebeinos, Jaroslav Fabian, Igor Žutić

Abstract: We theoretically study the effect of polar substrates on the magneto-optical conductivity of doped monolayer graphene, where we particularly focus on the role played by surface polar phonons (SPPs). Our calculations suggest that polaronic shifts of the intra- and interband absorption peaks can be significantly larger for substrates with strong electron-SPP coupling than those in graphene on non-po… ▽ More We theoretically study the effect of polar substrates on the magneto-optical conductivity of doped monolayer graphene, where we particularly focus on the role played by surface polar phonons (SPPs). Our calculations suggest that polaronic shifts of the intra- and interband absorption peaks can be significantly larger for substrates with strong electron-SPP coupling than those in graphene on non-polar substrates, where only intrinsic graphene optical phonons with much higher energies contribute. Electron-phonon scattering and phonon-assisted transitions are, moreover, found to result in a loss of spectral weight at the absorption peaks. The strength of these processes is strongly temperature-dependent and with increasing temperatures the magneto-optical conductivity becomes increasingly affected by polar substrates, most noticeably in polar substrates with small SPP energies such as HfO$_2$. The inclusion of a Landau level-dependent scattering rate to account for Coulomb impurity scattering does not alter this qualitative picture, but can play an important role in determining the lineshape of the absorption peaks, especially at low temperatures, where impurity scattering dominates. △ Less

Submitted 7 September, 2013; v1 submitted 15 July, 2013; originally announced July 2013.

Comments: 12 pages, 13 figures

Journal ref: Phys. Rev. B 88, 125429 (2013)

Effects of optical and surface polar phonons on the optical conductivity of doped graphene

Authors: Benedikt Scharf, Vasili Perebeinos, Jaroslav Fabian, Phaedon Avouris

Abstract: Using the Kubo linear response formalism, we study the effects of intrinsic graphene optical and surface polar phonons (SPPs) on the optical conductivity of doped graphene. We find that inelastic electron-phonon scattering contributes significantly to the phonon-assisted absorption in the optical gap. At room temperature, this midgap absorption can be as large as 20-25% of the universal ac conduct… ▽ More Using the Kubo linear response formalism, we study the effects of intrinsic graphene optical and surface polar phonons (SPPs) on the optical conductivity of doped graphene. We find that inelastic electron-phonon scattering contributes significantly to the phonon-assisted absorption in the optical gap. At room temperature, this midgap absorption can be as large as 20-25% of the universal ac conductivity for graphene on polar substrates due to strong electron-SPP coupling. The midgap absorption, moreover, strongly depends on the substrates and do** levels used. With increasing temperature, the midgap absorption increases, while the Drude peak, on the other hand, becomes broader as inelastic electron-phonon scattering becomes more probable. Consequently, the Drude weight decreases with increasing temperature. △ Less

Submitted 21 January, 2013; v1 submitted 14 November, 2012; originally announced November 2012.

Comments: 10 pages, 6 figures

Journal ref: Phys. Rev. B 87, 035414 (2013)

Phonon mediated interlayer conductance in twisted graphene bilayers

Authors: V. Perebeinos, J. Tersoff, Ph. Avouris

Abstract: Conduction between graphene layers is suppressed by momentum conservation whenever the layer stacking has a rotation. Here we show that phonon scattering plays a crucial role in facilitating interlayer conduction. The resulting dependence on orientation is radically different than previously expected, and far more favorable for device applications. At low temperatures, we predict diode-like curren… ▽ More Conduction between graphene layers is suppressed by momentum conservation whenever the layer stacking has a rotation. Here we show that phonon scattering plays a crucial role in facilitating interlayer conduction. The resulting dependence on orientation is radically different than previously expected, and far more favorable for device applications. At low temperatures, we predict diode-like current-voltage characteristics due to a phonon bottleneck. Simple scaling relationships give a good description of the conductance as a function of temperature, do**, rotation angle, and bias voltage, reflecting the dominant role of the interlayer beating phonon mode. △ Less

Submitted 3 January, 2013; v1 submitted 2 November, 2012; originally announced November 2012.

Comments: 5 pages, 3 figures (+ 3 pages, 5 figures supplemental)

Journal ref: Phys. Rev. Lett. 109, 236604 (2012)

Structure and electronic transport in graphene wrinkles

Authors: Wenjuan Zhu, Tony Low, Vasili Perebeinos, Ageeth A. Bol, Yu Zhu, Hugen Yan, Jerry Tersoff, Phaedon Avouris

Abstract: Wrinkling is a ubiquitous phenomenon in two-dimensional membranes. In particular, in the large-scale growth of graphene on metallic substrates, high densities of wrinkles are commonly observed. Despite their prevalence and potential impact on large-scale graphene electronics, relatively little is known about their structural morphology and electronic properties. Surveying the graphene landscape us… ▽ More Wrinkling is a ubiquitous phenomenon in two-dimensional membranes. In particular, in the large-scale growth of graphene on metallic substrates, high densities of wrinkles are commonly observed. Despite their prevalence and potential impact on large-scale graphene electronics, relatively little is known about their structural morphology and electronic properties. Surveying the graphene landscape using atomic force microscopy, we found that wrinkles reach a certain maximum height before folding over. Calculations of the energetics explain the morphological transition, and indicate that the tall ripples are collapsed into narrow standing wrinkles by van der Waals forces, analogous to large-diameter nanotubes. Quantum transport calculations show that conductance through these collapsed wrinkle structures is limited mainly by a density-of-states bottleneck and by interlayer tunneling across the collapsed bilayer region. Also through systematic measurements across large numbers of devices with wide folded wrinkles, we find a distinct anisotropy in their electrical resistivity, consistent with our transport simulations. These results highlight the coupling between morphology and electronic properties, which has important practical implications for large-scale high-speed graphene electronics. △ Less

Submitted 12 July, 2012; originally announced July 2012.

Comments: 5 figures supplemental information in separated file

Journal ref: Nano Letter 2012, vol.12, pp.3431-3436

Cooling of photoexcited carriers in graphene by internal and substrate phonons

Authors: Tony Low, Vasili Perebeinos, Raseong Kim, Marcus Freitag, Phaedon Avouris

Abstract: We investigate the energy relaxation of hot carriers produced by photoexcitation of graphene through coupling to both intrinsic and remote (substrate) surface polar phonons using the Boltzmann equation approach. We find that the energy relaxation of hot photocarriers in graphene on commonly used polar substrates, under most conditions, is dominated by remote surface polar phonons. We also calculat… ▽ More We investigate the energy relaxation of hot carriers produced by photoexcitation of graphene through coupling to both intrinsic and remote (substrate) surface polar phonons using the Boltzmann equation approach. We find that the energy relaxation of hot photocarriers in graphene on commonly used polar substrates, under most conditions, is dominated by remote surface polar phonons. We also calculate key characteristics of the energy relaxation process, such as the transient cooling time and steady state carrier temperatures and photocarriers densities, which determine the thermoelectric and photovoltaic photoresponse, respectively. Substrate engineering can be a promising route to efficient optoelectronic devices driven by hot carrier dynamics. △ Less

Submitted 13 August, 2012; v1 submitted 31 May, 2012; originally announced May 2012.

Comments: related papers at http://tonylow.info/

Journal ref: Phys. Rev. B 86, 045413 (2012)

Quantum behavior of graphene transistors near the scaling limit

Authors: Yanqing Wu, Vasili Perebeinos, Yu-ming Lin, Tony Low, Fengnian Xia, Phaedon Avouris

Abstract: The superior intrinsic properties of graphene have been a key research focus for the past few years. However, external components, such as metallic contacts, serve not only as essential probing elements, but also give rise to an effective electron cavity, which can form the basis for new quantum devices. In previous studies, quantum interference effects were demonstrated in graphene heterojunction… ▽ More The superior intrinsic properties of graphene have been a key research focus for the past few years. However, external components, such as metallic contacts, serve not only as essential probing elements, but also give rise to an effective electron cavity, which can form the basis for new quantum devices. In previous studies, quantum interference effects were demonstrated in graphene heterojunctions formed by a top gate. Here phase coherent transport behavior is demonstrated in a simple two terminal graphene structure with clearly-resolved Fabry-Perot oscillations in sub-100 nm devices. By aggressively scaling the channel length down to 50 nm, we study the evolution of the graphene transistor from the channel-dominated diffusive regime to the contact-dominated ballistic regime. Key issues such as the current asymmetry, the question of Fermi level pinning by the contacts, the graphene screening determining the heterojunction barrier width, the scaling of minimum conductivity and of the on/off current ratio, are investigated. △ Less

Submitted 11 May, 2012; originally announced May 2012.

Journal ref: Nano Lett., 2012, 12 (3), pp 1417-1423

Deformation and scattering in graphene over substrate steps

Authors: Tony Low, Vasili Perebeinos, Jerry Tersoff, Phaedon Avouris

Abstract: The electrical properties of graphene depend sensitively on the substrate. For example, recent measurements of epitaxial graphene on SiC show resistance arising from steps on the substrate. Here we calculate the deformation of graphene at substrate steps, and the resulting electrical resistance, over a wide range of step heights. The elastic deformations contribute only a very small resistance at… ▽ More The electrical properties of graphene depend sensitively on the substrate. For example, recent measurements of epitaxial graphene on SiC show resistance arising from steps on the substrate. Here we calculate the deformation of graphene at substrate steps, and the resulting electrical resistance, over a wide range of step heights. The elastic deformations contribute only a very small resistance at the step. However, for graphene on SiC(0001) there is strong substrate-induced do**, and this is substantially reduced on the lower side of the step where graphene pulls away from the substrate. The resulting resistance explains the experimental measurements. △ Less

Submitted 20 January, 2012; originally announced January 2012.

Comments: To appear Phys. Rev. Lett. (2012)

Journal ref: Phys. Rev. Lett. 108, p. 096601 (2012)

Relaxation of Optically Excited Carriers in Graphene

Authors: Raseong Kim, Vasili Perebeinos, Phaedon Avouris

Abstract: We explore the relaxation of photo-excited graphene by solving a transient Boltzmann transport equation with electron-phonon (e-ph) and electron-electron (e-e) scattering. Simulations show that when the excited carriers are relaxed by e-ph scattering only, a population inversion can be achieved at energies determined by the photon energy. However, e-e scattering quickly thermalizes the carrier ene… ▽ More We explore the relaxation of photo-excited graphene by solving a transient Boltzmann transport equation with electron-phonon (e-ph) and electron-electron (e-e) scattering. Simulations show that when the excited carriers are relaxed by e-ph scattering only, a population inversion can be achieved at energies determined by the photon energy. However, e-e scattering quickly thermalizes the carrier energy distributions washing out the negative optical conductivity peaks. The relaxation rates and carrier multiplication effects are presented as a function of photon energy and dielectric constant. △ Less

Submitted 28 March, 2011; originally announced March 2011.

Comments: 4 pages, 4 figures

Journal ref: Phys. Rev. B 84, 075449 (2011)

Silicon nitride gate dielectrics and bandgap engineering in graphene layers

Authors: Wenjuan Zhu, Deborah Neumayer, Vasili Perebeinos, Phaedon Avouris

Abstract: We show that silicon nitride can provide uniform coverage of graphene in field-effect transistors while preserving the channel mobility. This insulator allowed us to study the maximum channel resistance at the Dirac (neutrality) point as a function of the strength of a perpendicular electric field in top-gated devices with different numbers of graphene layers. Using a simple model to account for s… ▽ More We show that silicon nitride can provide uniform coverage of graphene in field-effect transistors while preserving the channel mobility. This insulator allowed us to study the maximum channel resistance at the Dirac (neutrality) point as a function of the strength of a perpendicular electric field in top-gated devices with different numbers of graphene layers. Using a simple model to account for surface potential variations (electron-hole puddles) near the Dirac point we estimate the field-induced band-gap or band-overlap in the different layers. △ Less

Submitted 10 September, 2010; originally announced September 2010.

Journal ref: Nano Letters, Vol.10, p.3572 (2010)

Efficient narrow-band light emission from a single carbon nanotube p-n diode

Authors: Thomas Mueller, Megumi Kinoshita, Mathias Steiner, Vasili Perebeinos, Ageeth A. Bol, Damon B. Farmer, Phaedon Avouris

Abstract: Electrically-driven light emission from carbon nanotubes could be exploited in nano-scale lasers and single-photon sources, and has therefore been the focus of much research. However, to date, high electric fields and currents have been either required for electroluminescence, or have been an undesired side effect, leading to high power requirements and low efficiencies. In addition, electrolumine… ▽ More Electrically-driven light emission from carbon nanotubes could be exploited in nano-scale lasers and single-photon sources, and has therefore been the focus of much research. However, to date, high electric fields and currents have been either required for electroluminescence, or have been an undesired side effect, leading to high power requirements and low efficiencies. In addition, electroluminescent linewidths have been broad enough to obscure the contributions of individual optical transitions. Here, we report electrically-induced light emission from individual carbon nanotube p-n diodes. A new level of control over electrical carrier injection is achieved, reducing power dissipation by a factor of up to 1000, and resulting in zero threshold current, negligible self-heating, and high carrier-to- photon conversion efficiencies. Moreover, the electroluminescent spectra are significantly narrower (ca. 35 meV) than in previous studies, allowing the identification of emission from free and localized excitons. △ Less

Submitted 30 April, 2010; originally announced April 2010.

Journal ref: Nature Nanotechnology 5, 27 (2009)

Thermal infrared emission reveals the Dirac point movement in biased graphene

Authors: Marcus Freitag, Hsin-Ying Chiu, Mathias Steiner, Vasili Perebeinos, Phaedon Avouris

Abstract: Graphene is a 2-dimensional material with high carrier mobility and thermal conductivity, suitable for high-speed electronics. Conduction and valence bands touch at the Dirac point. The absorptivity of single-layer graphene is 2.3%, nearly independent of wavelength. Here we investigate the thermal radiation from biased graphene transistors. We find that the emission spectrum of single-layer graphe… ▽ More Graphene is a 2-dimensional material with high carrier mobility and thermal conductivity, suitable for high-speed electronics. Conduction and valence bands touch at the Dirac point. The absorptivity of single-layer graphene is 2.3%, nearly independent of wavelength. Here we investigate the thermal radiation from biased graphene transistors. We find that the emission spectrum of single-layer graphene follows that of a grey body with constant emissivity (1.6 \pm 0.8)%. Most importantly, we can extract the temperature distribution in the ambipolar graphene channel, as confirmed by Stokes/anti-Stokes measurements. The biased graphene exhibits a temperature maximum whose location can be controlled by the gate voltage. We show that this peak in temperature reveals the spatial location of the minimum in carrier density, i.e. the Dirac point. △ Less

Submitted 2 April, 2010; originally announced April 2010.

Comments: Accepted in principle at Nature Nanotechnology

Journal ref: Nature Nanotech. 5, 497-501 (2010)

Inelastic Scattering and Current Saturation in Graphene

Authors: Vasili Perebeinos, Phaedon Avouris

Abstract: We present a study of transport in graphene devices on polar insulating substrates by solving the Bolzmann transport equation in the presence of graphene phonon, surface polar phonon, and Coulomb charged impurity scattering. The value of the saturated velocity shows very weak dependence on the carrier density, the nature of the insulating substrate, and the low-field mobility, varied by the charge… ▽ More We present a study of transport in graphene devices on polar insulating substrates by solving the Bolzmann transport equation in the presence of graphene phonon, surface polar phonon, and Coulomb charged impurity scattering. The value of the saturated velocity shows very weak dependence on the carrier density, the nature of the insulating substrate, and the low-field mobility, varied by the charged impurity concentration. The saturated velocity of 4 - 8 x 10^7 cm/s calculated at room temperature is significantly larger than reported experimental values. The discrepancy is due to the self-heating effect which lowers substantially the value of the saturated velocity. We predict that by reducing the insulator oxide thickness, which limits the thermal conductance, the saturated currents can be significantly enhanced. We also calculate the surface polar phonon contribution to the low-field mobility as a function of carrier density, temperature, and distance from the substrate. △ Less

Submitted 11 March, 2010; originally announced March 2010.

Comments: 8 pages 9 figures

Journal ref: Phys. Rev. B. 81, 195442 (2010)

Photocurrent imaging and efficient photon detection in a graphene transistor

Authors: Fengnian Xia, Thomas Mueller, Roksana Golizadeh-mojarad, Marcus Freitag, Yu-ming Lin, James Tsang, Vasili Perebeinos, Phaedon Avouris

Abstract: We measure the channel potential of a graphene transistor using a scanning photocurrent imaging technique. We show that at a certain gate bias, the impact of the metal on the channel potential profile extends into the channel for more than 1/3 of the total channel length from both source and drain sides, hence most of the channel is affected by the metal. The potential barrier between the metal… ▽ More We measure the channel potential of a graphene transistor using a scanning photocurrent imaging technique. We show that at a certain gate bias, the impact of the metal on the channel potential profile extends into the channel for more than 1/3 of the total channel length from both source and drain sides, hence most of the channel is affected by the metal. The potential barrier between the metal controlled graphene and bulk graphene channel is also measured at various gate biases. As the gate bias exceeds the Dirac point voltage, VDirac, the original p-type graphene channel turns into a p-n-p channel. When light is focused on the p-n junctions, an impressive external responsivity of 0.001 A/W is achieved, given that only a single layer of atoms are involved in photon detection. △ Less

Submitted 24 December, 2009; originally announced December 2009.

Comments: 24 pages, 4 figures

Journal ref: Nano Lett., 9 (3):1039-44 (2009)

Energy dissipation in graphene field-effect transistors

Authors: Marcus Freitag, Mathias Steiner, Yves Martin, Vasili Perebeinos, Zhihong Chen, James C. Tsang, Phaedon Avouris

Abstract: We measure the temperature distribution in a biased single-layer graphene transistor using Raman scattering microscopy of the 2D-phonon band. Peak operating temperatures of 1050 K are reached in the middle of the graphene sheet at 210 KW cm^(-2) of dissipated electric power. The metallic contacts act as heat sinks, but not in a dominant fashion. To explain the observed temperature profile and he… ▽ More We measure the temperature distribution in a biased single-layer graphene transistor using Raman scattering microscopy of the 2D-phonon band. Peak operating temperatures of 1050 K are reached in the middle of the graphene sheet at 210 KW cm^(-2) of dissipated electric power. The metallic contacts act as heat sinks, but not in a dominant fashion. To explain the observed temperature profile and heating rate, we have to include heat-flow from the graphene to the gate oxide underneath, especially at elevated temperatures, where the graphene thermal conductivity is lowered due to umklapp scattering. Velocity saturation due to phonons with about 50 meV energy is inferred from the measured charge density via shifts in the Raman G-phonon band, suggesting that remote scattering (through field coupling) by substrate polar surface phonons increases the energy transfer to the substrate and at the same time limits the high-bias electronic conduction of graphene. △ Less

Submitted 2 December, 2009; originally announced December 2009.

Comments: The pdf-file contains the main manuscript (19 pages, 3 figures) and the supplement (5 pages, 4 figures)

Journal ref: Nano Letters 9, p. 1883-1888 (2009)

Current Saturation and Surface Polar Phonon Scattering in Graphene

Authors: Vasili Perebeinos, Phaedon Avouris

Abstract: We present a study of transport in graphene devices on polar insulating substrates using a tight-binding model. The mobility is computed using a multiband Boltzmann treatment. We provide the scaling of the surface polar phonon contribution to the low-field mobility with carrier density, temperature, and distance from the substrate. At high bias, we find that graphene self-heating effect is essen… ▽ More We present a study of transport in graphene devices on polar insulating substrates using a tight-binding model. The mobility is computed using a multiband Boltzmann treatment. We provide the scaling of the surface polar phonon contribution to the low-field mobility with carrier density, temperature, and distance from the substrate. At high bias, we find that graphene self-heating effect is essential to account for the observed saturated current behavior. We predict that by optimizing the device cooling, the high bias currents can be significantly enhanced. △ Less

Submitted 26 October, 2009; originally announced October 2009.

Comments: 5 pages, 3 figures

Carrier scattering, mobilities and electrostatic potential in mono-, bi- and tri-layer graphenes

Authors: Wenjuan Zhu, Vasili Perebeinos, Marcus Freitag, Phaedon Avouris

Abstract: The carrier density and temperature dependence of the Hall mobility in mono-, bi- and tri-layer graphene has been systematically studied. We found that as the carrier density increases, the mobility decreases for mono-layer graphene, while it increases for bi-layer/tri-layer graphene. This can be explained by the different density of states in mono-layer and bi-layer/tri-layer graphenes. In mono… ▽ More The carrier density and temperature dependence of the Hall mobility in mono-, bi- and tri-layer graphene has been systematically studied. We found that as the carrier density increases, the mobility decreases for mono-layer graphene, while it increases for bi-layer/tri-layer graphene. This can be explained by the different density of states in mono-layer and bi-layer/tri-layer graphenes. In mono-layer, the mobility also decreases with increasing temperature primarily due to surface polar substrate phonon scattering. In bi-layer/tri-layer graphene, on the other hand, the mobility increases with temperature because the field of the substrate surface phonons is effectively screened by the additional graphene layer(s) and the mobility is dominated by Coulomb scattering. We also find that the temperature dependence of the Hall coefficient in mono-, bi- and tri-layer graphene can be explained by the formation of electron and hole puddles in graphene. This model also explains the temperature dependence of the minimum conductance of mono-, bi- and tri-layer graphene. The electrostatic potential variations across the different graphene samples are extracted. △ Less

Submitted 5 August, 2009; originally announced August 2009.

Comments: 18 pages, 7 figures

Journal ref: Phys. Rev. B, Vol.80, p.35402 (2009)

Valence Force Model for Phonons in Graphene and Carbon Nanotubes

Authors: Vasili Perebeinos, J. Tersoff

Abstract: Many calculations require a simple classical model for the interactions between sp^2-bonded carbon atoms, as in graphene or carbon nanotubes. Here we present a new valence force model to describe these interactions. The calculated phonon spectrum of graphene and the nanotube breathing-mode energy agree well with experimental measurements and with ab initio calculations. The model does not assume… ▽ More Many calculations require a simple classical model for the interactions between sp^2-bonded carbon atoms, as in graphene or carbon nanotubes. Here we present a new valence force model to describe these interactions. The calculated phonon spectrum of graphene and the nanotube breathing-mode energy agree well with experimental measurements and with ab initio calculations. The model does not assume an underlying lattice, so it can also be directly applied to distorted structures. The characteristics and limitations of the model are discussed. △ Less

Submitted 22 May, 2009; originally announced May 2009.

Comments: 4 pages, 3 figures

Journal ref: Phys. Rev. B. 79, 241409(R) (2009)

An essential mechanism of heat dissipation in carbon nanotube electronics

Authors: Slava V. Rotkin, Vasili Perebeinos, Alexey G. Petrov, Phaedon Avouris

Abstract: Excess heat generated in integrated circuits is one of the major problems of modern electronics. Surface phonon-polariton scattering is shown here to be the dominant mechanism for hot charge carrier energy dissipation in a nanotube device fabricated on a polar substrate, such as $SiO_2$. Using microscopic quantum models the Joule losses were calculated for the various energy dissipation channels… ▽ More Excess heat generated in integrated circuits is one of the major problems of modern electronics. Surface phonon-polariton scattering is shown here to be the dominant mechanism for hot charge carrier energy dissipation in a nanotube device fabricated on a polar substrate, such as $SiO_2$. Using microscopic quantum models the Joule losses were calculated for the various energy dissipation channels as a function of the electric field, do**, and temperature. The polariton mechanism must be taken into account to obtain an accurate estimate of the effective thermal coupling of the non-suspended nanotube to the substrate, which was found to be 0.1-0.2 W/m.K even in the absence of the bare phononic thermal coupling. △ Less

Submitted 7 March, 2009; originally announced March 2009.

Journal ref: Nano Letters vol. 9 (5), 1850-1855 (March 31, 2009).

How does the substrate affect the Raman and excited state spectra of a carbon nanotube?

Authors: Mathias Steiner, Marcus Freitag, James C. Tsang, Vasili Perebeinos, Ageeth A. Bol, Antonio V. Failla, Phaedon Avouris

Abstract: We study the optical properties of a single, semiconducting single-walled carbon nanotube (CNT) that is partially suspended across a trench and partially supported by a SiO2-substrate. By tuning the laser excitation energy across the E33 excitonic resonance of the suspended CNT segment, the scattering intensities of the principal Raman transitions, the radial breathing mode (RBM), the G-mode and… ▽ More We study the optical properties of a single, semiconducting single-walled carbon nanotube (CNT) that is partially suspended across a trench and partially supported by a SiO2-substrate. By tuning the laser excitation energy across the E33 excitonic resonance of the suspended CNT segment, the scattering intensities of the principal Raman transitions, the radial breathing mode (RBM), the G-mode and the D-mode show strong resonance enhancement of up to three orders of magnitude. In the supported part of the CNT, despite a loss of Raman scattering intensity of up to two orders of magnitude, we recover the E33 excitonic resonance suffering a substrate-induced red shift of 50 meV. The peak intensity ratio between G-band and D-band is highly sensitive to the presence of the substrate and varies by one order of magnitude, demonstrating the much higher defect density in the supported CNT segments. By comparing the E33 resonance spectra measured by Raman excitation spectroscopy and photoluminescence (PL) excitation spectroscopy in the suspended CNT segment, we observe that the peak energy in the PL excitation spectrum is red-shifted by 40 meV. This shift is associated with the energy difference between the localized exciton dominating the PL excitation spectrum and the free exciton giving rise to the Raman excitation spectrum. High-resolution Raman spectra reveal substrate-induced symmetry breaking, as evidenced by the appearance of additional peaks in the strongly broadened Raman G band. Laser-induced line shifts of RBM and G band measured on the suspended CNT segment are both linear as a function of the laser excitation power. Stokes/anti-Stokes measurements, however, reveal an increase of the G phonon population while the RBM phonon population is rather independent of the laser excitation power. △ Less

Submitted 14 April, 2009; v1 submitted 9 February, 2009; originally announced February 2009.

Comments: Revised manuscript, 20 pages, 8 figures

Journal ref: Applied Physics A 96, 271 (2009)

Chemical Do** and Electron-Hole Conduction Asymmetry in Graphene Devices

Authors: Damon B. Farmer, Roksana Golizadeh-Mojarad, Vasili Perebeinos, Yu-Ming Lin, George S. Tulevski, James C. Tsang, Phaedon Avouris

Abstract: We investigate polyethylene imine and diazonium salts as stable, complementary dopants on graphene. Transport in graphene devices doped with these molecules exhibits asymmetry in electron and hole conductance. The conductance of one carrier is preserved, while the conductance of the other carrier decreases. Simulations based on nonequilibrium Green's function formalism suggest that the origin of… ▽ More We investigate polyethylene imine and diazonium salts as stable, complementary dopants on graphene. Transport in graphene devices doped with these molecules exhibits asymmetry in electron and hole conductance. The conductance of one carrier is preserved, while the conductance of the other carrier decreases. Simulations based on nonequilibrium Green's function formalism suggest that the origin of this asymmetry is imbalanced carrier injection from the graphene electrodes caused by misalignment of the electrode and channel neutrality points. △ Less

Submitted 9 December, 2008; originally announced December 2008.

The Effects of Substrate Phonon Mode Scattering on Transport in Carbon Nanotubes

Authors: Vasili Perebeinos, Slava Rotkin, Alexey G. Petrov, Phaedon Avouris

Abstract: Carbon nanotubes (CNTs) have large intrinsic carrier mobility due to weak acoustic phonon scattering. However, unlike two-dimensional metal-oxide-semiconductor field effect transistors (MOSFETs), substrate surface polar phonon (SPP) scattering has a dramatic effect on the CNTFET mobility, due to the reduced vertical dimensions of the latter. We find that for the Van der Waals distance between CN… ▽ More Carbon nanotubes (CNTs) have large intrinsic carrier mobility due to weak acoustic phonon scattering. However, unlike two-dimensional metal-oxide-semiconductor field effect transistors (MOSFETs), substrate surface polar phonon (SPP) scattering has a dramatic effect on the CNTFET mobility, due to the reduced vertical dimensions of the latter. We find that for the Van der Waals distance between CNT and an SiO$_2$ substrate, the low-field mobility at room temperature is reduced by almost an order of magnitude depending on the tube diameter. We predict additional experimental signatures of the SPP mechanism in dependence of the mobility on density, temperature, tube diameter, and CNT - substrate separation. △ Less

Submitted 29 October, 2008; originally announced October 2008.

Comments: 6 pages, 6 figures

Journal ref: Nano Lett. 9, 312 (2009)

Computational study of exciton generation in suspended carbon nanotube transistors

Authors: Siyuranga O. Koswatta, Vasili Perebeinos, Mark S. Lundstrom, Phaedon Avouris

Abstract: Optical emission from carbon nanotube transistors (CNTFETs) has recently attracted significant attention due to its potential applications. In this paper, we use a self-consistent numerical solution of the Boltzmann transport equation in the presence of both phonon and exciton scattering to present a detailed study of the operation of a partially suspended CNTFET light emitter, which has been di… ▽ More Optical emission from carbon nanotube transistors (CNTFETs) has recently attracted significant attention due to its potential applications. In this paper, we use a self-consistent numerical solution of the Boltzmann transport equation in the presence of both phonon and exciton scattering to present a detailed study of the operation of a partially suspended CNTFET light emitter, which has been discussed in a recent experiment. We determine the energy distribution of hot carriers in the CNTFET, and, as reported in the experiment, observe localized generation of excitons near the trench-substrate junction and an exponential increase in emission intensity with a linear increase in current versus gate voltage. We further provide detailed insight into device operation, and propose optimization schemes for efficient exciton generation; a deeper trench increases the generation efficiency, and use of high-k substrate oxides could lead to even larger enhancements. △ Less

Submitted 2 May, 2008; originally announced May 2008.

Comments: 17 pages, 5 figures

Journal ref: Nano Letters, 8 (6), pp. 1596--1601, 2008.

Conductance Quantization in Graphene Nanoribbons

Authors: Yu-Ming Lin, Vasili Perebeinos, Zhihong Chen, Phaedon Avouris

Abstract: We report the experimental observation of conductance quantization in graphene nanoribbons, where 1D transport subbands are formed due to the lateral quantum confinement. We show that this quantization in graphene nanoribbons can be observed at temperatures as high as 80 K and channel lengths as long as 1.7 $μ$m. The observed quantization is in agreement with that predicted by theoretical calcul… ▽ More We report the experimental observation of conductance quantization in graphene nanoribbons, where 1D transport subbands are formed due to the lateral quantum confinement. We show that this quantization in graphene nanoribbons can be observed at temperatures as high as 80 K and channel lengths as long as 1.7 $μ$m. The observed quantization is in agreement with that predicted by theoretical calculations. △ Less

Submitted 1 May, 2008; v1 submitted 30 April, 2008; originally announced May 2008.

Journal ref: Phys. Rev B 78, 161409R (2008)

Phonon and Electronic Non-radiative Decay of Excitons in Carbon Nanotubes

Authors: Vasili Perebeinos, Phaedon Avouris

Abstract: We investigate theoretically the rates of non-radiative decay of excited semiconducting nanotubes by a variety of decay mechanisms and compare with experimental findings. We find that the multi-phonon decay (MPD) of free excitons is too slow to be responsible for the experimentally observed lifetimes. However, MPD lifetimes of localized excitons could be 2-3 orders of magnitude shorter. We also… ▽ More We investigate theoretically the rates of non-radiative decay of excited semiconducting nanotubes by a variety of decay mechanisms and compare with experimental findings. We find that the multi-phonon decay (MPD) of free excitons is too slow to be responsible for the experimentally observed lifetimes. However, MPD lifetimes of localized excitons could be 2-3 orders of magnitude shorter. We also propose a new decay mechanism that relies on a finite do** of nanotubes and involves exciton decay into an optical phonon and an intraband electron-hole pair. The resulting lifetime is in the range of 5 to 100 ps, even for a moderate do** level. △ Less

Submitted 8 April, 2008; v1 submitted 4 April, 2008; originally announced April 2008.

Comments: 4 pages, 3 figures, + 7 pages, 3 figures in attached appendix

Journal ref: Phys. Rev. Lett. 101, 057401 (2008).

Magneto-spectroscopy of Highly-Aligned Carbon Nanotubes: Identifying the Role of Threading Magnetic Flux

Authors: J. Shaver, S. A. Crooker, J. A. Fagan, E. K. Hobbie, N. Ubrig, O. Portugall, V. Perebeinos, Ph. Avouris, J. Kono

Abstract: We have investigated excitons in highly-aligned single-walled carbon nanotubes (SWCNTs) through optical spectroscopy at low temperature (1.5 K) and high magnetic fields ($\textbf{\textit{B}}$) up to 55 T. SWCNT/polyacrylic acid films were stretched, giving SWCNTs that are highly aligned along the direction of stretch ($\hat{n}$). Utilizing two well-defined measurement geometries,… ▽ More We have investigated excitons in highly-aligned single-walled carbon nanotubes (SWCNTs) through optical spectroscopy at low temperature (1.5 K) and high magnetic fields ($\textbf{\textit{B}}$) up to 55 T. SWCNT/polyacrylic acid films were stretched, giving SWCNTs that are highly aligned along the direction of stretch ($\hat{n}$). Utilizing two well-defined measurement geometries, $\hat{n}\parallel\textbf{\textit{B}}$ and $\hat{n}\perp\textbf{\textit{B}}$, we provide unambiguous evidence that the photoluminescence energy and intensity are only sensitive to the $\textbf{\textit{B}}$-component parallel to the tube axis. A theoretical model of one-dimensional magneto-excitons, based on exchange-split `bright' and `dark' exciton bands with Aharonov-Bohm-phase-dependent energies, masses, and oscillator strengths, successfully reproduces our observations and allows determination of the splitting between the two bands as $\sim4.8$ meV for (6,5) SWCNTs. △ Less

Submitted 21 February, 2008; originally announced February 2008.

Comments: 4 pages, 4 figures

Journal ref: Physical Review B 78, 081402(R) (2008)