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Systematic Absences of Optical Phonon Modes in Phonon Dispersion Measured by Electron Microscopy
Authors:
Aowen Li,
Paul Zeiger,
Zuxian He,
Mingquan Xu,
Stephen J. Pennycook,
Ján Rusz,
Wu Zhou
Abstract:
Phonon dispersion is widely used to elucidate the vibrational properties of materials. As an emerging technique, momentum-resolved vibrational spectroscopy in scanning transmission electron microscopy (STEM) offers an unparalleled approach to explore q-dependent phonon behavior at local structures. In this study, we systematically investigate the phonon dispersion of monolayer graphene across seve…
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Phonon dispersion is widely used to elucidate the vibrational properties of materials. As an emerging technique, momentum-resolved vibrational spectroscopy in scanning transmission electron microscopy (STEM) offers an unparalleled approach to explore q-dependent phonon behavior at local structures. In this study, we systematically investigate the phonon dispersion of monolayer graphene across several Brillouin zones (BZs) using momentum-resolved vibrational spectroscopy and find that the optical phonon signals vanish at the Γ points with indices (hk0) satisfying h+2k=3n (n denoted integers). Theoretical analysis reveals that the observed phenomena arise from the complete destructive interference of the scattered waves from different basis atoms. This observation, corroborated by the study of diamond, should be a general characteristic of materials composed of symmetrically equivalent pairs of the same elements. Moreover, our results emphasize the importance of multiple scattering in interpreting the vibrational signals in bulk materials. We demonstrate that the systematic absences and dynamic effects, which have not been much appreciated before, offer new insights into the experimental assessment of local vibrational properties of materials.
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Submitted 6 June, 2024; v1 submitted 17 February, 2024;
originally announced February 2024.
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A Performance-Portable SYCL Implementation of CRK-HACC for Exascale
Authors:
Esteban M. Rangel,
S. John Pennycook,
Adrian Pope,
Nicholas Frontiere,
Zhiqiang Ma,
Varsha Madananth
Abstract:
The first generation of exascale systems will include a variety of machine architectures, featuring GPUs from multiple vendors. As a result, many developers are interested in adopting portable programming models to avoid maintaining multiple versions of their code. It is necessary to document experiences with such programming models to assist developers in understanding the advantages and disadvan…
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The first generation of exascale systems will include a variety of machine architectures, featuring GPUs from multiple vendors. As a result, many developers are interested in adopting portable programming models to avoid maintaining multiple versions of their code. It is necessary to document experiences with such programming models to assist developers in understanding the advantages and disadvantages of different approaches.
To this end, this paper evaluates the performance portability of a SYCL implementation of a large-scale cosmology application (CRK-HACC) running on GPUs from three different vendors: AMD, Intel, and NVIDIA. We detail the process of migrating the original code from CUDA to SYCL and show that specializing kernels for specific targets can greatly improve performance portability without significantly impacting programmer productivity. The SYCL version of CRK-HACC achieves a performance portability of 0.96 with a code divergence of almost 0, demonstrating that SYCL is a viable programming model for performance-portable applications.
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Submitted 24 October, 2023;
originally announced October 2023.
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A multiscale generative model to understand disorder in domain boundaries
Authors:
Jiadong Dan,
Moaz Waqar,
Ivan Erofeev,
Kui Yao,
John Wang,
Stephen J. Pennycook,
N. Duane Loh
Abstract:
A continuing challenge in atomic resolution microscopy is to identify significant structural motifs and their assembly rules in synthesized materials with limited observations. Here we propose and validate a simple and effective hybrid generative model capable of predicting unseen domain boundaries in a potassium sodium niobate thin film from only a small number of observations, without expensive…
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A continuing challenge in atomic resolution microscopy is to identify significant structural motifs and their assembly rules in synthesized materials with limited observations. Here we propose and validate a simple and effective hybrid generative model capable of predicting unseen domain boundaries in a potassium sodium niobate thin film from only a small number of observations, without expensive first-principles calculation. Our results demonstrate that complicated domain boundary structures can arise from simple interpretable local rules, played out probabilistically. We also found new significant tileable boundary motifs and evidence that our system creates domain boundaries with the highest entropy. More broadly, our work shows that simple yet interpretable machine learning models can help us describe and understand the nature and origin of disorder in complex materials.
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Submitted 22 May, 2023;
originally announced May 2023.
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Direct observation of two-dimensional small polarons at correlated oxide interface
Authors:
Chi Sin Tang,
Shengwei Zeng,
**g Wu,
Shunfeng Chen,
Dongsheng Song,
Milošević,
** Yang,
Caozheng Diao,
Jun Zhou,
Stephen J. Pennycook,
Mark B. H. Breese,
Chuanbing Cai,
Thirumalai Venkatesan,
Ariando Ariando,
Ming Yang,
Andrew T. S. Wee,
Xinmao Yin
Abstract:
Two-dimensional (2D) perovskite oxide interfaces are ideal systems where diverse emergent properties can be uncovered.The formation and modification of polaronic properties due to short-range strong charge-lattice interactions of 2D interfaces remains hugely intriguing.Here, we report the direct observation of small-polarons at the LaAlO3/SrTiO3 (LAO/STO) conducting interface using high-resolution…
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Two-dimensional (2D) perovskite oxide interfaces are ideal systems where diverse emergent properties can be uncovered.The formation and modification of polaronic properties due to short-range strong charge-lattice interactions of 2D interfaces remains hugely intriguing.Here, we report the direct observation of small-polarons at the LaAlO3/SrTiO3 (LAO/STO) conducting interface using high-resolution spectroscopic ellipsometry.First-principles investigations further reveals that strong coupling between the interfacial electrons and the Ti-lattice result in the formation of localized 2D small polarons.These findings resolve the longstanding issue where the excess experimentally measured interfacial carrier density is significantly lower than theoretically predicted values.The charge-phonon induced lattice distortion further provides an analogue to the superconductive states in magic-angle twisted bilayer graphene attributed to the many-body correlations induced by broken periodic lattice symmetry.Our study sheds light on the multifaceted complexity of broken periodic lattice induced quasi-particle effects and its relationship with superconductivity.
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Submitted 6 July, 2023; v1 submitted 25 October, 2022;
originally announced October 2022.
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Ordered and tunable Majorana-zero-mode lattice in naturally strained LiFeAs
Authors:
Meng Li,
Geng Li,
Lu Cao,
Xingtai Zhou,
Xiancheng Wang,
Changqing **,
Ching-Kai Chiu,
Stephen J. Pennycook,
Ziqiang Wang,
Hong-Jun Gao
Abstract:
Majorana zero modes (MZMs) obey non-Abelian statistics and are considered building blocks for constructing topological qubits. Iron-based superconductors with topological band structures have emerged as promising hosting materials, since isolated candidate MZMs in the quantum limit have been observed inside the topological vortex cores. However, these materials suffer from issues related to alloyi…
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Majorana zero modes (MZMs) obey non-Abelian statistics and are considered building blocks for constructing topological qubits. Iron-based superconductors with topological band structures have emerged as promising hosting materials, since isolated candidate MZMs in the quantum limit have been observed inside the topological vortex cores. However, these materials suffer from issues related to alloying-induced disorder, uncontrolled vortex lattices and a low yield of topological vortices. Here, we report the formation of an ordered and tunable MZM lattice in naturally-strained stoichiometric LiFeAs by scanning tunneling microscopy/spectroscopy (STM/S). We observe biaxial charge density wave (CDW) stripes along the Fe-Fe and As-As directions in the strained regions. The vortices are pinned on the CDW stripes in the As-As direction and form an ordered lattice. We detect more than 90 percent of the vortices to be topological and possess the characteristics of isolated MZMs at the vortex center, forming an ordered MZM lattice with the density and the geometry tunable by an external magnetic field. Remarkably, with decreasing the spacing of neighboring vortices, the MZMs start to couple with each other. Our findings provide a new pathway towards tunable and ordered MZM lattices as a platform for future topological quantum computation.
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Submitted 10 June, 2022; v1 submitted 9 June, 2022;
originally announced June 2022.
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Ultrathin quantum light source enabled by a nonlinear van der Waals crystal with vanishing interlayer-electronic-coupling
Authors:
Qiangbing Guo,
Xiao-Zhuo Qi,
Meng Gao,
Sanlue Hu,
Lishu Zhang,
Wenju Zhou,
Wenjie Zang,
Xiaoxu Zhao,
Junyong Wang,
Bingmin Yan,
Mingquan Xu,
Yun-Kun Wu,
Goki Eda,
Zewen Xiao,
Huiyang Gou,
Yuan ** Feng,
Guang-Can Guo,
Wu Zhou,
Xi-Feng Ren,
Cheng-Wei Qiu,
Stephen J. Pennycook,
Andrew T. S. Wee
Abstract:
Interlayer electronic coupling in two-dimensional (2D) materials enables tunable and emergent properties by stacking engineering. However, it also brings significant evolution of electronic structures and attenuation of excitonic effects in 2D semiconductors as exemplified by quickly degrading excitonic photoluminescence and optical nonlinearities in transition metal dichalcogenides when monolayer…
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Interlayer electronic coupling in two-dimensional (2D) materials enables tunable and emergent properties by stacking engineering. However, it also brings significant evolution of electronic structures and attenuation of excitonic effects in 2D semiconductors as exemplified by quickly degrading excitonic photoluminescence and optical nonlinearities in transition metal dichalcogenides when monolayers are stacked into van der Waals structures. Here we report a novel van der Waals crystal, niobium oxide dichloride, featuring a vanishing interlayer electronic coupling and scalable second harmonic generation intensity of up to three orders higher than that of exciton-resonant monolayer WS2. Importantly, the strong second-order nonlinearity enables correlated parametric photon pair generation, via a spontaneous parametric down-conversion (SPDC) process, in flakes as thin as ~46 nm. To our knowledge, this is the first SPDC source unambiguously demonstrated in 2D layered materials, and the thinnest SPDC source ever reported. Our work opens an avenue towards develo** van der Waals material-based ultracompact on-chip SPDC sources, and high-performance photon modulators in both classical and quantum optical technologies.
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Submitted 8 February, 2022;
originally announced February 2022.
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Titanium doped kagome superconductor CsV3-xTixSb5 and two distinct phases
Authors:
Haitao Yang,
Zihao Huang,
Yuhang Zhang,
Zhen Zhao,
**an Shi,
Hailan Luo,
Lin Zhao,
Guojian Qian,
Hengxin Tan,
Bin Hu,
Ke Zhu,
Zouyouwei Lu,
Hua Zhang,
Jian** Sun,
**gguagn Cheng,
Chengmin Shen,
Xiao Lin,
Binghai Yan,
Xingjiang Zhou,
Ziqiang Wang,
Stephen J. Pennycook,
Hui Chen,
Xiaoli Dong,
Wu Zhou,
Hong-Jun Gao
Abstract:
The vanadium-based kagome superconductor CsV3Sb5 has attracted tremendous attention due to its unexcepted anomalous Hall effect (AHE), charge density waves (CDWs), nematicity, and a pseudogap pair density wave (PDW) coexisting with unconventional strong-coupling superconductivity (SC). The origins of CDWs, unconventional SC, and their correlation with different electronic states in this kagome sys…
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The vanadium-based kagome superconductor CsV3Sb5 has attracted tremendous attention due to its unexcepted anomalous Hall effect (AHE), charge density waves (CDWs), nematicity, and a pseudogap pair density wave (PDW) coexisting with unconventional strong-coupling superconductivity (SC). The origins of CDWs, unconventional SC, and their correlation with different electronic states in this kagome system are of great significance, but so far, are still under debate. Chemical do** in the kagome layer provides one of the most direct ways to reveal the intrinsic physics, but remains unexplored. Here, we report, for the first time, the synthesis of Ti-substituted CsV3Sb5 single crystals and its rich phase diagram map** the evolution of intertwining electronic states. The Ti atoms directly substitute for V in the kagome layers. CsV3-xTixSb5 shows two distinct SC phases upon substitution. The Ti slightly-substituted phase displays an unconventional V-shaped SC gap, coexisting with weakening CDW, PDW, AHE, and nematicity. The Ti highly-substituted phase has a U-shaped SC gap concomitant with a short-range rotation symmetry breaking CDW, while long-range CDW, twofold symmetry of in-plane resistivity, AHE, and PDW are absent. Furthermore, we also demonstrate the chemical substitution of V atoms with other elements such as Cr and Nb, showing a different modulation on the SC phase and CDWs. These findings open up a way to synthesise a new family of doped CsV3Sb5 materials, and further representing a new platform for tuning the different correlated electronic states and superconducting pairing in kagome superconductors.
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Submitted 17 October, 2022; v1 submitted 21 October, 2021;
originally announced October 2021.
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Experimental Evidence of t2g Electron-Gas Rashba Interaction Induced by Asymmetric Orbital Hybridization
Authors:
Ganesh Ji Omar,
Weilong Kong,
Hariom Jani,
Mengsha Li,
Jun Zhou,
Zhi Shiuh Lim,
Saurav Prakash,
Shengwei Zeng,
Sonu Hooda,
Thirumalai Venkatesan,
Yuan ** Feng,
Stephen J. Pennycook,
Shen Lei,
A. Ariando
Abstract:
We report the control of Rashba spin-orbit interaction by tuning asymmetric hybridization between Ti-orbitals at the LaAlO3/SrTiO3 interface. This asymmetric orbital hybridization is modulated by introducing a LaFeO3 layer between LaAlO3 and SrTiO3, which alters the Ti-O lattice polarization and traps interfacial charge carriers, resulting in a large Rashba spin-orbit effect at the interface in th…
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We report the control of Rashba spin-orbit interaction by tuning asymmetric hybridization between Ti-orbitals at the LaAlO3/SrTiO3 interface. This asymmetric orbital hybridization is modulated by introducing a LaFeO3 layer between LaAlO3 and SrTiO3, which alters the Ti-O lattice polarization and traps interfacial charge carriers, resulting in a large Rashba spin-orbit effect at the interface in the absence of an external bias. This observation is verified through high-resolution electron microscopy, magneto-transport and first-principles calculations. Our results open hitherto unexplored avenues of controlling Rashba interaction to design next-generation spin-orbitronics.
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Submitted 5 November, 2022; v1 submitted 13 October, 2021;
originally announced October 2021.
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Observation of perfect diamagnetism and interfacial effect on the electronic structures in Nd0.8Sr0.2NiO2 superconducting infinite layers
Authors:
S. W. Zeng,
X. M. Yin,
C. J. Li,
L. E. Chow,
C. S. Tang,
K. Han,
Z. Huang,
Y. Cao,
D. Y. Wan,
Z. T. Zhang,
Z. S. Lim,
C. Z. Diao,
P. Yang,
A. T. S. Wee,
S. J. Pennycook,
A. Ariando
Abstract:
Nickel-based complex oxides have served as a playground for decades in the quest for a copper-oxide analog of the high-temperature superconductivity. They may provide clues towards understanding the mechanism and an alternative route for high-temperature superconductors. The recent discovery of superconductivity in the infinite-layer nickelate thin films has fulfilled this pursuit. However, materi…
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Nickel-based complex oxides have served as a playground for decades in the quest for a copper-oxide analog of the high-temperature superconductivity. They may provide clues towards understanding the mechanism and an alternative route for high-temperature superconductors. The recent discovery of superconductivity in the infinite-layer nickelate thin films has fulfilled this pursuit. However, material synthesis remains challenging, direct demonstration of perfect diamagnetism is still missing, and understanding of the role of the interface and bulk to the superconducting properties is still lacking. Here, we show high-quality Nd0.8Sr0.2NiO2 thin films with different thicknesses and demonstrate the interface and strain effects on the electrical, magnetic and optical properties. Perfect diamagnetism is achieved, confirming the occurrence of superconductivity in the films. Unlike the thick films in which the normal-state Hall-coefficient changes signs as the temperature decreases, the Hall-coefficient of films thinner than 5.5 nm remains negative, suggesting a thickness-driven band structure modification. Moreover, X-ray absorption spectroscopy reveals the Ni-O hybridization nature in doped infinite-layer nickelates, and the hybridization is enhanced as the thickness decreases. Consistent with band structure calculations on the nickelate/SrTiO3 heterostructure, the interface and strain effect induce a dominating electron-like band in the ultrathin film, thus causing the sign-change of the Hall-coefficient.
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Submitted 13 February, 2022; v1 submitted 29 April, 2021;
originally announced April 2021.
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Atomically sharp interface enabled ultrahigh-speed, nonvolatile memory devices
Authors:
Liangmei Wu,
AiWei Wang,
**an Shi,
Jiahao Yan,
Zhang Zhou,
Ce Bian,
Jiajun Ma,
Ruisong Ma,
Hongtao Liu,
Jiancui Chen,
Yuan Huang,
Wu Zhou,
Lihong Bao,
Min Ouyang,
Stephen J. Pennycook,
Sokrates T. Pantelides,
Hong-Jun Gao
Abstract:
Development of memory devices with ultimate performance has played a key role in innovation of modern electronics. As a mainstream technology nonvolatile memory devices have manifested high capacity and mechanical reliability, however current major bottlenecks include low extinction ratio and slow operational speed. Although substantial effort has been employed to improve their performance, a typi…
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Development of memory devices with ultimate performance has played a key role in innovation of modern electronics. As a mainstream technology nonvolatile memory devices have manifested high capacity and mechanical reliability, however current major bottlenecks include low extinction ratio and slow operational speed. Although substantial effort has been employed to improve their performance, a typical hundreds of micro- or even milli- second write time remains a few orders of magnitude longer than their volatile counterparts. We have demonstrated nonvolatile, floating-gate memory devices based on van der Waals heterostructures with atomically sharp interfaces between different functional elements, and achieved ultrahigh-speed programming/erasing operations verging on an ultimate theoretical limit of nanoseconds with extinction ratio up to 10^10. This extraordinary performance has allowed new device capabilities such as multi-bit storage, thus opening up unforeseen applications in the realm of modern nanoelectronics and offering future fabrication guidelines for device scale-up.
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Submitted 23 April, 2021;
originally announced April 2021.
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Bipolar conduction and giant positive magnetoresistance in doped metallic titanium oxide heterostructures
Authors:
Ke Huang,
Tao Wang,
Mengjia **,
Liang Wu,
Junyao Floria Wang,
Shengyao Li,
Dong-chen Qi,
Shuying Cheng,
Yangyang Li,
**gsheng Chen,
Xiaozhong He,
Changjian Li,
Stephen J. Pennycook,
X. Renshaw Wang
Abstract:
Empowering conventional materials with unexpected magnetoelectric properties is appealing to the multi-functionalization of existing devices and the exploration of future electronics. Recently, owing to its unique effect in modulating a matter's properties, ultra-small dopants, e.g. H, D, and Li, attract enormous attention in creating emergent functionalities, such as superconductivity, and metal-…
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Empowering conventional materials with unexpected magnetoelectric properties is appealing to the multi-functionalization of existing devices and the exploration of future electronics. Recently, owing to its unique effect in modulating a matter's properties, ultra-small dopants, e.g. H, D, and Li, attract enormous attention in creating emergent functionalities, such as superconductivity, and metal-insulator transition. Here, we report an observation of bipolar conduction accompanied by a giant positive magnetoresistance in D-doped metallic Ti oxide (TiOxDy) films. To overcome the challenges in intercalating the D into a crystalline oxide, a series of TiOxDy were formed by sequentially do** Ti with D and surface/interface oxidation. Intriguingly, while the electron mobility of the TiOxDy increases by an order of magnitude larger after do**, the emergent holes also exhibit high mobility. Moreover, the bipolar conduction induces a giant magnetoresistance up to 900% at 6 T, which is ~6 times higher than its conventional phase. Our study paves a way to empower conventional materials in existing electronics and induce novel electronic phases.
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Submitted 19 April, 2021;
originally announced April 2021.
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Unlocking the Origin of Compositional Fluctuations in InGaN Light Emitting Diodes
Authors:
Tara P. Mishra,
Govindo J. Syaranamual,
Zeyu Deng,
**g Yang Chung,
Li Zhang,
Sarah A Goodman,
Lewys Jones,
Michel Bosman,
Silvija Gradečak,
Stephen J. Pennycook,
Pieremanuele Canepa
Abstract:
The accurate determination of the compositional fluctuations is pivotal in understanding their role in the reduction of efficiency in high indium content $In_{x}Ga_{1-x}N$ light-emitting diodes, the origin of which is still poorly understood. Here we have combined electron energy loss spectroscopy (EELS) imaging at sub-nanometer resolution with multiscale computational models to obtain a statistic…
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The accurate determination of the compositional fluctuations is pivotal in understanding their role in the reduction of efficiency in high indium content $In_{x}Ga_{1-x}N$ light-emitting diodes, the origin of which is still poorly understood. Here we have combined electron energy loss spectroscopy (EELS) imaging at sub-nanometer resolution with multiscale computational models to obtain a statistical distribution of the compositional fluctuations in $In_{x}Ga_{1-x}N$ quantum wells (QWs). Employing a multiscale computational model, we show the tendency of intrinsic compositional fluctuation in $In_{x}Ga_{1-x}N$ QWs at different Indium concentration and in the presence of strain. We have developed a systematic formalism based on the autonomous detection of compositional fluctuation in observed and simulated EELS maps. We have shown a direct comparison between the computationally predicted and experimentally observed compositional fluctuations. We have found that although a random alloy model captures the distribution of compositional fluctuations in relatively low In ($\sim$ 18%) content $In_{x}Ga_{1-x}N$ QWs, there exists a striking deviation from the model in higher In content ($\geq$ 24%) QWs. Our results highlight a distinct behavior in carrier localization driven by compositional fluctuations in the low and high In-content InGaN QWs, which would ultimately affect the performance of LEDs. Furthermore, our robust computational and atomic characterization method can be widely applied to study materials in which nanoscale compositional fluctuations play a significant role on the material performance.
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Submitted 6 February, 2021;
originally announced February 2021.
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Probing the Meta-Stability of Oxide Core/Shell Nanoparticle Systems at Atomic Resolution
Authors:
Manuel A. Roldana,
Arnaud Mayence,
Alberto López-Ortega,
Ryo Ishikawa,
Juan Salafranca,
Marta Estrader,
German Salazar-Alvarez,
M. Dolors Baró,
Josep Nogués,
Stephen J. Pennycook,
Maria Varelaa
Abstract:
Hybrid nanoparticles allow exploiting the interplay of confinement, proximity between different materials and interfacial effects. However, to harness their properties an in-depth understanding of their (meta)stability and interfacial characteristics is crucial. This is especially the case of nanosystems based on functional oxides working under reducing conditions, which may severely impact their…
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Hybrid nanoparticles allow exploiting the interplay of confinement, proximity between different materials and interfacial effects. However, to harness their properties an in-depth understanding of their (meta)stability and interfacial characteristics is crucial. This is especially the case of nanosystems based on functional oxides working under reducing conditions, which may severely impact their properties. In this work, the in-situ electron-induced selective reduction of Mn3O4 to MnO is studied in magnetic Fe3O4/Mn3O4 and Mn3O4/Fe3O4 core/shell nanoparticles by means of high-resolution scanning transmission electron microscopy combined with electron energy-loss spectroscopy. Such in-situ transformation allows mimicking the actual processes in operando environments. A multi-stage image analysis using geometric phase analysis combined with particle image velocity enables direct monitoring of the relationship between structure, chemical composition and strain relaxation during the Mn3O4 reduction. In the case of Fe3O4/Mn3O4 core/shell the transformation occurs smoothly without the formation of defects. However, for the inverse Mn3O4/Fe3O4 core/shell configuration the electron beam-induced transformation occurs in different stages that include redox reactions and void formation followed by strain field relaxation via formation of defects. This study highlights the relevance of understanding the local dynamics responsible for changes in the particle composition in order to control stability and, ultimately, macroscopic functionality.
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Submitted 17 September, 2020;
originally announced September 2020.
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Artificial two-dimensional polar metal by charge transfer to a ferroelectric insulator
Authors:
W. X. Zhou,
H. J. Wu,
J. Zhou,
S. W. Zeng,
C. J. Li,
M. S. Li,
R. Guo,
J. X. Xiao,
Z. Huang,
W. M. Lv,
K. Han,
P. Yang,
C. G. Li,
Z. S. Lim,
H. Wang,
Y. Zhang,
S. J. Chua,
K. Y. Zeng,
T. Venkatesan,
J. S. Chen,
Y. P. Feng,
S. J. Pennycook,
A. Ariando
Abstract:
Integrating multiple properties in a single system is crucial for the continuous developments in electronic devices. However, some physical properties are mutually exclusive in nature. Here, we report the coexistence of two seemingly mutually exclusive properties-polarity and two-dimensional conductivity-in ferroelectric Ba$_{0.2}$Sr$_{0.8}$TiO$_3$ thin films at the LaAlO$_3$/Ba$_{0.2}$Sr$_{0.8}$T…
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Integrating multiple properties in a single system is crucial for the continuous developments in electronic devices. However, some physical properties are mutually exclusive in nature. Here, we report the coexistence of two seemingly mutually exclusive properties-polarity and two-dimensional conductivity-in ferroelectric Ba$_{0.2}$Sr$_{0.8}$TiO$_3$ thin films at the LaAlO$_3$/Ba$_{0.2}$Sr$_{0.8}$TiO$_3$ interface at room temperature. The polarity of a ~3.2 nm Ba$_{0.2}$Sr$_{0.8}$TiO$_3$ thin film is preserved with a two-dimensional mobile carrier density of ~0.05 electron per unit cell. We show that the electronic reconstruction resulting from the competition between the built-in electric field of LaAlO$_3$ and the polarization of Ba$_{0.2}$Sr$_{0.8}$TiO$_3$ is responsible for this unusual two-dimensional conducting polar phase. The general concept of exploiting mutually exclusive properties at oxide interfaces via electronic reconstruction may be applicable to other strongly-correlated oxide interfaces, thus opening windows to new functional nanoscale materials for applications in novel nanoelectronics.
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Submitted 11 July, 2020;
originally announced July 2020.
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Topological Hall Effect and Skyrmion-like Bubbles at a Charge-transfer Interface
Authors:
Zhi Shiuh Lim,
Changjian Li,
Zhen Huang,
Xiao Chi,
Jun Zhou,
Shengwei Zeng,
Ganesh Ji Omar,
Yuan ** Feng,
Andrivo Rusydi,
Stephen John Pennycook,
Thirumalai Venkatesan,
Ariando Ariando
Abstract:
Exploring exotic interface magnetism due to charge transfer and strong spin-orbit coupling has profound application in future development of spintronic memory. Here, the emergence, tuning and interpretation of hump-shape Hall Effect from a CaMnO3/CaIrO3/CaMnO3 trilayer structure are studied in detail. The hump signal can be recognized as Topological Hall Effect suggesting the presence of Skyrmion-…
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Exploring exotic interface magnetism due to charge transfer and strong spin-orbit coupling has profound application in future development of spintronic memory. Here, the emergence, tuning and interpretation of hump-shape Hall Effect from a CaMnO3/CaIrO3/CaMnO3 trilayer structure are studied in detail. The hump signal can be recognized as Topological Hall Effect suggesting the presence of Skyrmion-like magnetic bubbles; but the debated alternative interpretation where the signal being an artefact between two cancelling Anomalous Hall Effect loops is also discussed. Firstly, by tilting the magnetic field direction, the evolution of Hall signal suggests transformation of the bubbles topology into a more trivial kind. Secondly, by varying the thickness of CaMnO3, the optimal thicknesses for the hump signal emergence are found, suggesting a tuning of charge transfer fraction. Using high-resolution transmission electron microscopy, a stacking fault is also identified, which distinguishes the top and bottom CaMnO3/CaIrO3 interfaces in terms of charge transfer fraction and possible interfacial Dzyaloshinskii-Moriya Interaction. Finally, a spin-transfer torque experiment revealed a low threshold current density of ~10^9 A/m^2 for initiating the motion of bubbles. This discovery opens a possible route for integrating Skyrmions with antiferromagnetic spintronics.
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Submitted 2 June, 2020;
originally announced June 2020.
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Learning Motifs and their Hierarchies in Atomic Resolution Microscopy
Authors:
Jiadong Dan,
Xiaoxu Zhao,
Shoucong Ning,
Jiong Lu,
Kian ** Loh,
N. Duane Loh,
Stephen J. Pennycook
Abstract:
Progress in functional materials discovery has been accelerated by advances in high throughput materials synthesis and by the development of high-throughput computation. However, a complementary robust and high throughput structural characterization framework is still lacking. New methods and tools in the field of machine learning suggest that a highly automated high-throughput structural characte…
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Progress in functional materials discovery has been accelerated by advances in high throughput materials synthesis and by the development of high-throughput computation. However, a complementary robust and high throughput structural characterization framework is still lacking. New methods and tools in the field of machine learning suggest that a highly automated high-throughput structural characterization framework based on atomic-level imaging can establish the crucial statistical link between structure and macroscopic properties. Here we develop a machine learning framework towards this goal. Our framework captures local structural features in images with Zernike polynomials, which is demonstrably noise-robust, flexible, and accurate. These features are then classified into readily interpretable structural motifs with a hierarchical active learning scheme powered by a novel unsupervised two-stage relaxed clustering scheme. We have successfully demonstrated the accuracy and efficiency of the proposed methodology by map** a full spectrum of structural defects, including point defects, line defects, and planar defects in scanning transmission electron microscopy (STEM) images of various 2D materials, with greatly improved separability over existing methods. Our techniques can be easily and flexibly applied to other types of microscopy data with complex features, providing a solid foundation for automatic, multiscale feature analysis with high veracity.
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Submitted 29 November, 2021; v1 submitted 23 May, 2020;
originally announced May 2020.
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Phase diagram and superconducting dome of infinite-layer $\mathrm{Nd_{1-x}Sr_{x}NiO_{2}}$ thin films
Authors:
Shengwei Zeng,
Chi Sin Tang,
Xinmao Yin,
Changjian Li,
Mengsha Li,
Zhen Huang,
Junxiong Hu,
Wei Liu,
Ganesh Ji Omar,
Hariom Jani,
Zhi Shiuh Lim,
Kun Han,
Dongyang Wan,
** Yang,
Stephen John Pennycook,
Andrew T. S. Wee,
Ariando Ariando
Abstract:
Infinite-layer Nd1-xSrxNiO2 thin films with Sr do** level x from 0.08 to 0.3 were synthesized and investigated. We found a superconducting dome to be between 0.12 and 0.235 which is accompanied by a weakly insulating behaviour in both underdoped and overdoped regimes. The dome is akin to that in the electron-doped 214-type and infinite-layer cuprate superconductors. For x higher than 0.18, the n…
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Infinite-layer Nd1-xSrxNiO2 thin films with Sr do** level x from 0.08 to 0.3 were synthesized and investigated. We found a superconducting dome to be between 0.12 and 0.235 which is accompanied by a weakly insulating behaviour in both underdoped and overdoped regimes. The dome is akin to that in the electron-doped 214-type and infinite-layer cuprate superconductors. For x higher than 0.18, the normal state Hall coefficient ($R_{H}$) changes the sign from negative to positive as the temperature decreases. The temperature of the sign changes monotonically decreases with decreasing x from the overdoped side and approaches the superconducting dome at the mid-point, suggesting a reconstruction of the Fermi surface as the dopant concentration changes across the center of the dome.
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Submitted 2 October, 2020; v1 submitted 23 April, 2020;
originally announced April 2020.
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Characteristic Lengths of Interlayer Charge-Transfer in Correlated Oxide Heterostructures
Authors:
Ganesh Ji Omar,
Mengsha Li,
Xiao Chi,
Zhen Huang,
Zhi Shiuh Lim,
Saurav Prakash,
Shengwei Zeng,
Changjian Li,
Xiaojiang Yu,
Chunhua Tang,
Dongsheng Song,
Andrivo Rusydi,
Thirumalai Venkatesan,
Stephen John Pennycook,
Ariando Ariando
Abstract:
Using interlayer interaction to control functional heterostructures with atomic-scale designs has become one of the most effective interface-engineering strategies nowadays. Here, we demonstrate the effect of a crystalline LaFeO3 buffer layer on amorphous and crystalline LaAlO3/SrTiO3 heterostructures. The LaFeO3 buffer layer acts as an energetically favored electron acceptor in both LaAlO3/SrTiO3…
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Using interlayer interaction to control functional heterostructures with atomic-scale designs has become one of the most effective interface-engineering strategies nowadays. Here, we demonstrate the effect of a crystalline LaFeO3 buffer layer on amorphous and crystalline LaAlO3/SrTiO3 heterostructures. The LaFeO3 buffer layer acts as an energetically favored electron acceptor in both LaAlO3/SrTiO3 systems, resulting in modulation of interfacial carrier density and hence metal-to-insulator transition. For amorphous and crystalline LaAlO3/SrTiO3 heterostructures, the metal-to-insulator transition is found when the LaFeO3 layer thickness crosses 3 and 6 unit cells, respectively. Such different critical LaFeO3 thicknesses are explained in terms of distinct characteristic lengths of the redox-reaction-mediated and polar-catastrophe-dominated charge transfer, controlled by the interfacial atomic contact and Thomas-Fermi screening effect, respectively. Our results not only shed light on the complex interlayer charge transfer across oxide heterostructures but also provides a new route to precisely tailor the charge-transfer process at a functional interface.
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Submitted 24 March, 2020;
originally announced March 2020.
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Spin-Valley Locking Effect in Defect States of Monolayer MoS$_2$
Authors:
Yaqian Wang,
Longjiang Deng,
Qilin Wei,
Yi Wan,
Zhen Liu,
Xiao Lu,
Yue Li,
Lei Bi,
Li Zhang,
Haipeng Lu,
Haiyan Chen,
Peiheng Zhou,
Linbo Zhang,
Yingchun Cheng,
Xiaoxu Zhao,
Yu Ye,
Wei Huang,
Stephen J. Pennycook,
Kian ** Loh,
Bo Peng
Abstract:
Valley pseudospin in two-dimensional (2D) transition-metal dichalcogenides (TMDs) allows optical control of spin-valley polarization and intervalley quantum coherence. Defect states in TMDs give rise to new exciton features and theoretically exhibit spin-valley polarization; however, experimental achievement of this phenomenon remains challenges. Here, we report unambiguous valley pseudospin of de…
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Valley pseudospin in two-dimensional (2D) transition-metal dichalcogenides (TMDs) allows optical control of spin-valley polarization and intervalley quantum coherence. Defect states in TMDs give rise to new exciton features and theoretically exhibit spin-valley polarization; however, experimental achievement of this phenomenon remains challenges. Here, we report unambiguous valley pseudospin of defect-bound localized excitons in CVD-grown monolayer MoS2; enhanced valley Zeeman splitting with an effective g-factor of -6.2 is observed. Our results reveal that all five d-orbitals and the increased effective electron mass contribute to the band shift of defect states, demonstrating a new physics of the magnetic responses of defect-bound localized excitons, strikingly different from that of A excitons. Our work paves the way for the manipulation of the spin-valley degrees of freedom through defects toward valleytronic devices.
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Submitted 21 February, 2020;
originally announced February 2020.
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Enhanced Valley Zeeman Splitting in Fe-Doped Monolayer MoS2
Authors:
Qi Li,
Xiaoxu Zhao,
Longjiang Deng,
Zhongtai Shi,
Sheng Liu,
Qilin Wei,
Linbo Zhang,
Yingchun Cheng,
Li Zhang,
Haipeng Lu,
Weibo Gao,
Wei Huang,
Cheng-Wei Qiu,
Gang Xiang,
Stephen John Pennycook,
Qihua Xiong,
Kian ** Loh,
Bo Peng
Abstract:
The Zeeman effect offers unique opportunities for magnetic manipulation of the spin degree of freedom (DOF). Recently, valley Zeeman splitting, referring to the lifting of valley degeneracy, has been demonstrated in two-dimensional transition metal dichalcogenides (TMDs) at liquid helium temperature. However, to realize the practical applications of valley pseudospins, the valley DOF must be contr…
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The Zeeman effect offers unique opportunities for magnetic manipulation of the spin degree of freedom (DOF). Recently, valley Zeeman splitting, referring to the lifting of valley degeneracy, has been demonstrated in two-dimensional transition metal dichalcogenides (TMDs) at liquid helium temperature. However, to realize the practical applications of valley pseudospins, the valley DOF must be controllable by a magnetic field at room temperature, which remains a significant challenge. Magnetic do** in TMDs can enhance the Zeeman splitting, however, to achieve this experimentally is not easy. Here, we report unambiguous magnetic manipulation of valley Zeeman splitting at 300 K (g = -6.4) and 10 K (g = -11) in a CVD-grown Fe-doped MoS2 monolayer; the effective g factor can be tuned to -20.7 by increasing the Fe dopant concentration, which represents an approximately fivefold enhancement as compared to undoped MoS2. Our measurements and calculations reveal that the enhanced splitting and geff factors are due to the Heisenberg exchange interaction of the localized magnetic moments (Fe 3d electrons) with MoS2 through the d-orbital hybridization.
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Submitted 15 February, 2020;
originally announced February 2020.
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Phase-controllable growth of ultrathin 2D magnetic FeTe crystals
Authors:
Lixing Kang,
Chen Ye,
Xiaoxu Zhao,
Xieyu Zhou,
Junxiong Hu,
Qiao Li,
Qingling Ouyang,
Jiefu Yang,
Dianyi Hu,
Jieqiong Chen,
Xun Cao,
Yong Zhang,
Manzhang Xu,
Jun Di,
Dan Tian,
Pin Song,
Govindan Kutty,
Qingsheng Zeng,
Qundong Fu,
Ya Deng,
Jiadong Zhou,
Stephen J. Pennycook,
Ariando Ariando,
Feng Miao,
Guo Hong
, et al. (5 additional authors not shown)
Abstract:
Two-dimensional (2D) magnets with intrinsic ferromagnetic/antiferromagnetic (FM/AFM) ordering are highly desirable for future spintronics devices. However, the synthesis of 2D magnetic crystals, especially the direct growth on SiO2/Si substrate, is just in its infancy. Here, we report a chemical vapor deposition (CVD)-based rational growth approach for the synthesis of ultrathin FeTe crystals with…
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Two-dimensional (2D) magnets with intrinsic ferromagnetic/antiferromagnetic (FM/AFM) ordering are highly desirable for future spintronics devices. However, the synthesis of 2D magnetic crystals, especially the direct growth on SiO2/Si substrate, is just in its infancy. Here, we report a chemical vapor deposition (CVD)-based rational growth approach for the synthesis of ultrathin FeTe crystals with controlled structural and magnetic phases. By precisely optimizing the growth temperature (Tgrowth), FeTe nanoplates with either layered tetragonal or non-layered hexagonal phase can be controlled with high-quality. The two controllable phases lead to square and triangular morphologies with a thickness down to 3.6 and 2.8 nm, respectively. More importantly, transport measurements reveal that tetragonal FeTe is antiferromagnetic with a Neel temperature (TN) about 71.8 K, while hexagonal FeTe is ferromagnetic with a Curie temperature (TC) around 220 K. Theoretical calculations indicate that the ferromagnetic order in hexagonal FeTe is originated from a concomitant lattice distortion and the spin-lattice coupling. This study represents a major step forward in the CVD growth of 2D magnetic materials on SiO2/Si substrates and highlights on their potential applications in the future spintronic devices.
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Submitted 13 December, 2019;
originally announced December 2019.
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Materials Structure, Properties and Dynamics through Scanning Transmission Electron Microscopy
Authors:
Stephen J. Pennycook,
Changjian Li,
Mengsha Li,
Chunhua Tang,
Eiji Okunishi,
Maria Varela,
Young-Min Kim,
Jae Hyuck Jang
Abstract:
Scanning transmission electron microscopy (STEM) has advanced rapidly in the last decade thanks to the ability to correct the major aberrations of the probe forming lens. Now atomic-sized beams are routine, even at accelerating voltages as low as 40 kV, allowing knock-on damage to be minimized in beam sensitive materials. The aberration-corrected probes can contain sufficient current for high qual…
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Scanning transmission electron microscopy (STEM) has advanced rapidly in the last decade thanks to the ability to correct the major aberrations of the probe forming lens. Now atomic-sized beams are routine, even at accelerating voltages as low as 40 kV, allowing knock-on damage to be minimized in beam sensitive materials. The aberration-corrected probes can contain sufficient current for high quality, simultaneous, imaging and analysis in multiple modes. Atomic positions can be mapped with picometer precision, revealing ferroelectric domain structures, composition can be mapped by energy dispersive X-ray spectroscopy (EDX) and electron energy loss spectroscopy (EELS) and charge transfer can be tracked unit cell by unit cell using the EELS fine structure. Furthermore, dynamics of point defects can be investigated through rapid acquisition of multiple image scans. Today STEM has become an indispensable tool for analytical science at the atomic level, providing a whole new level of insights into the complex interplays that control materials properties.
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Submitted 20 August, 2019;
originally announced August 2019.
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Localization of Yttrium Segregation within YSZ Grain Boundary Dislocation Cores
Authors:
G. Sánchez-Santolino,
J. Salafranca,
S. T. Pantelides,
S. J. Pennycook,
C. León,
M. Varela
Abstract:
Ionic conductivity blocking at grain boundaries in polycrystalline electrolytes is one of the main obstacles that need to be overcome in order to improve the performance of solid state fuel cells and batteries. To this aim, harnessing the physical properties of grain boundaries in ionic conducting materials such as yttria stabilized zirconia (YSZ) down to the atomic scale arises as a greatly impor…
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Ionic conductivity blocking at grain boundaries in polycrystalline electrolytes is one of the main obstacles that need to be overcome in order to improve the performance of solid state fuel cells and batteries. To this aim, harnessing the physical properties of grain boundaries in ionic conducting materials such as yttria stabilized zirconia (YSZ) down to the atomic scale arises as a greatly important task. Here we present a structural and compositional analysis of a single grain boundary in a 9 mol% yttria content YSZ bicrystal by means of aberration corrected scanning transmission electron microscopy. Our studies combine strain and compositional atomic resolution analysis with density-functional-theory calculations in order to find a preferential segregation of yttrium to the expansive atomic sites at the grain boundary dislocation cores. These results address a crucial step towards the understanding of the physical properties of grain boundaries down to atomic dimensions.
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Submitted 8 August, 2019;
originally announced August 2019.
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Momentum Conserved Ultrafast Charge Transfer Dynamics of Interlayer Excitons in vdW Heterostructures
Authors:
Pranjal Kumar Gogoi,
Yung-Chang Lin,
Ryosuke Senga,
Hannu-Pekka Komsa,
Swee Liang Wong,
Dongzhi Chi,
Arkady V. Krasheninnikov,
Lain-Jong Li,
Mark B. H. Breese,
Steven J. Pennycook,
Andrew T. S. Wee,
Kazu Suenaga
Abstract:
Heterostructures comprising van der Waals (vdW) stacked transition metal dichalcogenide (TMDC) monolayers are a fascinating class of two-dimensional (2D) materials with unique properties. The presence of interlayer excitons, where the electron and the hole remain spatially separated in the two layers due to ultrafast charge transfer, is an intriguing feature of these heterostructures. Inevitably,…
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Heterostructures comprising van der Waals (vdW) stacked transition metal dichalcogenide (TMDC) monolayers are a fascinating class of two-dimensional (2D) materials with unique properties. The presence of interlayer excitons, where the electron and the hole remain spatially separated in the two layers due to ultrafast charge transfer, is an intriguing feature of these heterostructures. Inevitably, the efficiency of 2D heterostructure devices is critically dependent on the charge transfer dynamics. However, the role of the relative rotation angle of the constituent layers on this charge transfer dynamics is hitherto unknown. Here, we investigate MoS$_2$/WSe$_2$ vdW heterostructures (hMWs) using monochromated low-loss electron energy loss (EEL) spectroscopy combined with aberration-corrected scanning transmission electron microscopy (STEM), and report that momentum conservation is a critical factor in the charge transfer dynamics of TMDC vdW heterostructures. The low-loss EEL spectra of the heterostructures with various rotation angles reveal that the charge transfer rate can be about one order-of-magnitude faster in the aligned (or anti-aligned) case than the misaligned cases. These results provide a deeper insight into the role of the fundamental principle of momentum conservation in 2D vdW heterostructure charge transfer dynamics.
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Submitted 1 February, 2019;
originally announced February 2019.
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Point Defects and Localized Excitons in 2D WSe2
Authors:
Yu Jie Zheng,
Yifeng Chen,
Yu Li Huang,
Pranjal Kumar Gogoi,
Ming Yang Li,
Lain-Jong Li,
Paolo E. Trevisanutto,
Qixing Wang,
Stephen J Pennycook,
Andrew Thye Shen Wee,
Su Ying Quek
Abstract:
Identifying the point defects in 2D materials is important for many applications. Recent studies have proposed that W vacancies are the predominant point defect in 2D WSe2, in contrast to theoretical studies, which predict that chalcogen vacancies are the most likely intrinsic point defects in transition metal dichalcogenide semiconductors. We show using first principles calculations, scanning tun…
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Identifying the point defects in 2D materials is important for many applications. Recent studies have proposed that W vacancies are the predominant point defect in 2D WSe2, in contrast to theoretical studies, which predict that chalcogen vacancies are the most likely intrinsic point defects in transition metal dichalcogenide semiconductors. We show using first principles calculations, scanning tunneling microscopy (STM) and scanning transmission electron microscopy experiments, that W vacancies are not present in our CVD-grown 2D WSe2. We predict that O-passivated Se vacancies (O_Se) and O interstitials (Oins) are present in 2D WSe2, because of facile O2 dissociation at Se vacancies, or due to the presence of WO3 precursors in CVD growth. These defects give STM images in good agreement with experiment. The optical properties of point defects in 2D WSe2 are important because single photon emission (SPE) from 2D WSe2 has been observed experimentally. While strain gradients funnel the exciton in real space, point defects are necessary for the localization of the exciton at length scales that enable photons to be emitted one at a time. Using state-of-the-art GW-Bethe-Salpeter-equation calculations, we predict that only Oins defects give localized excitons within the energy range of SPE in previous experiments, making them a likely source of previously observed SPE. No other point defects (O_Se, Se vacancies, W vacancies and Se_W antisites) give localized excitons in the same energy range. Our predictions suggest ways to realize SPE in related 2D materials and point experimentalists toward other energy ranges for SPE in 2D WSe2.
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Submitted 14 May, 2019; v1 submitted 1 November, 2018;
originally announced November 2018.
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CosmoFlow: Using Deep Learning to Learn the Universe at Scale
Authors:
Amrita Mathuriya,
Deborah Bard,
Peter Mendygral,
Lawrence Meadows,
James Arnemann,
Lei Shao,
Siyu He,
Tuomas Karna,
Daina Moise,
Simon J. Pennycook,
Kristyn Maschoff,
Jason Sewall,
Nalini Kumar,
Shirley Ho,
Mike Ringenburg,
Prabhat,
Victor Lee
Abstract:
Deep learning is a promising tool to determine the physical model that describes our universe. To handle the considerable computational cost of this problem, we present CosmoFlow: a highly scalable deep learning application built on top of the TensorFlow framework. CosmoFlow uses efficient implementations of 3D convolution and pooling primitives, together with improvements in threading for many el…
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Deep learning is a promising tool to determine the physical model that describes our universe. To handle the considerable computational cost of this problem, we present CosmoFlow: a highly scalable deep learning application built on top of the TensorFlow framework. CosmoFlow uses efficient implementations of 3D convolution and pooling primitives, together with improvements in threading for many element-wise operations, to improve training performance on Intel(C) Xeon Phi(TM) processors. We also utilize the Cray PE Machine Learning Plugin for efficient scaling to multiple nodes. We demonstrate fully synchronous data-parallel training on 8192 nodes of Cori with 77% parallel efficiency, achieving 3.5 Pflop/s sustained performance. To our knowledge, this is the first large-scale science application of the TensorFlow framework at supercomputer scale with fully-synchronous training. These enhancements enable us to process large 3D dark matter distribution and predict the cosmological parameters $Ω_M$, $σ_8$ and n$_s$ with unprecedented accuracy.
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Submitted 9 November, 2018; v1 submitted 14 August, 2018;
originally announced August 2018.
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Anomalous Hall magnetoresistance in a ferromagnet
Authors:
Yumeng Yang,
Ziyan Luo,
Haijun Wu,
Yanjun Xu,
Run-Wei Li,
Stephen J. Pennycook,
Shufeng Zhang,
Yihong Wu
Abstract:
The anomalous Hall effect, observed in conducting ferromagnets with broken time-reversal symmetry, offers the possibility to couple spin and orbital degrees of freedom of electrons in ferromagnets. In addition to charge, the anomalous Hall effect also leads to spin accumulation at the surfaces perpendicular to both the current and magnetization direction. Here we experimentally demonstrate that th…
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The anomalous Hall effect, observed in conducting ferromagnets with broken time-reversal symmetry, offers the possibility to couple spin and orbital degrees of freedom of electrons in ferromagnets. In addition to charge, the anomalous Hall effect also leads to spin accumulation at the surfaces perpendicular to both the current and magnetization direction. Here we experimentally demonstrate that the spin accumulation, subsequent spin backflow, and spin-charge conversion can give rise to a different type of spin current related magnetoresistance, dubbed here as the anomalous Hall magnetoresistance, which has the same angular dependence as the recently discovered spin Hall magnetoresistance. The anomalous Hall magnetoresistance is observed in four types of samples: co-sputtered (Fe1-xMnx)0.6Pt0.4, Fe1-xMnx and Pt multilayer, Fe1-xMnx with x = 0.17 to 0.65 and Fe, and analyzed using the drift-diffusion model. Our results provide an alternative route to study charge-spin conversion in ferromagnets and to exploit it for potential spintronic applications.
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Submitted 8 June, 2018;
originally announced June 2018.
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Anisotropic Gilbert dam** in perovskite La$_{0.7}$Sr$_{0.3}$MnO$_{3}$ thin film
Authors:
Qing Qin,
Shikun He,
Haijun Wu,
** Yang,
Liang Liu,
Wendong Song,
Stephen John Pennycook,
**gsheng Chen
Abstract:
The viscous Gilbert dam** parameter governing magnetization dynamics is of primary importance for various spintronics applications. Although, the dam** constant is believed to be anisotropic by theories. It is commonly treated as a scalar due to lack of experimental evidence. Here, we present an elaborate angle dependent broadband ferromagnetic resonance study of high quality epitaxial La…
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The viscous Gilbert dam** parameter governing magnetization dynamics is of primary importance for various spintronics applications. Although, the dam** constant is believed to be anisotropic by theories. It is commonly treated as a scalar due to lack of experimental evidence. Here, we present an elaborate angle dependent broadband ferromagnetic resonance study of high quality epitaxial La$_{0.7}$Sr$_{0.3}$MnO$_{3}$ films. Extrinsic effects are suppressed and we show convincing evidence of anisotropic dam** with twofold symmetry at room temperature. The observed anisotropic relaxation is attributed to the magnetization orientation dependence of the band structure. In addition, we demonstrated that such anisotropy can be tailored by manipulating the stain. This work provides new insights to understand the mechanism of magnetization relaxation.
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Submitted 2 April, 2018;
originally announced April 2018.
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Large polaron evolution in anatase TiO2 due to carrier and temperature dependence of electron-phonon coupling
Authors:
B. X. Yan,
D. Y. Wan,
X. Chi,
C. J. Li,
M. R. Motapothula,
S. Hooda,
P. Yang,
Z. Huang,
S. W. Zeng,
A. Gadekar,
S. J. Pennycook,
A. Rusydi,
Ariando,
J. Martin,
T. Venkatesan
Abstract:
The electronic and magneto transport properties of reduced anatase TiO2 epitaxial thin films are analyzed considering various polaronic effects. Unexpectedly, with increasing carrier concentration, the mobility increases, which rarely happens in common metallic systems. We find that the screening of the electron-phonon (e-ph) coupling by excess carriers is necessary to explain this unusual depende…
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The electronic and magneto transport properties of reduced anatase TiO2 epitaxial thin films are analyzed considering various polaronic effects. Unexpectedly, with increasing carrier concentration, the mobility increases, which rarely happens in common metallic systems. We find that the screening of the electron-phonon (e-ph) coupling by excess carriers is necessary to explain this unusual dependence. We also find that the magnetoresistance (MR) could be decomposed into a linear and a quadratic component, separately characterizing the transport and trap behavior of carriers as a function of temperature. The various transport behaviors could be organized into a single phase diagram which clarifies the nature of large polaron in this material.
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Submitted 5 March, 2023; v1 submitted 11 November, 2017;
originally announced November 2017.
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High-Performance Code Generation though Fusion and Vectorization
Authors:
Jason Sewall,
Simon J. Pennycook
Abstract:
We present a technique for automatically transforming kernel-based computations in disparate, nested loops into a fused, vectorized form that can reduce intermediate storage needs and lead to improved performance on contemporary hardware.
We introduce representations for the abstract relationships and data dependencies of kernels in loop nests and algorithms for manipulating them into more effic…
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We present a technique for automatically transforming kernel-based computations in disparate, nested loops into a fused, vectorized form that can reduce intermediate storage needs and lead to improved performance on contemporary hardware.
We introduce representations for the abstract relationships and data dependencies of kernels in loop nests and algorithms for manipulating them into more efficient form; we similarly introduce techniques for determining data access patterns for stencil-like array accesses and show how this can be used to elide storage and improve vectorization.
We discuss our prototype implementation of these ideas---named HFAV---and its use of a declarative, inference-based front-end to drive transformations, and we present results for some prominent codes in HPC.
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Submitted 24 October, 2017;
originally announced October 2017.
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A Metric for Performance Portability
Authors:
S. J. Pennycook,
J. D. Sewall,
V. W. Lee
Abstract:
The term "performance portability" has been informally used in computing to refer to a variety of notions which generally include: 1) the ability to run one application across multiple hardware platforms; and 2) achieving some notional level of performance on these platforms. However, there has been a noticeable lack of consensus on the precise meaning of the term, and authors' conclusions regardi…
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The term "performance portability" has been informally used in computing to refer to a variety of notions which generally include: 1) the ability to run one application across multiple hardware platforms; and 2) achieving some notional level of performance on these platforms. However, there has been a noticeable lack of consensus on the precise meaning of the term, and authors' conclusions regarding their success (or failure) to achieve performance portability have thus been subjective. Comparing one approach to performance portability with another has generally been marked with vague claims and verbose, qualitative explanation of the comparison. This paper presents a concise definition for performance portability, along with a simple metric that accurately captures the performance and portability of an application across different platforms. The utility of this metric is then demonstrated with a retroactive application to previous work.
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Submitted 22 November, 2016;
originally announced November 2016.
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Gigahertz Dielectric Polarization of Single-atom Niobium Substituted in Graphitic layers
Authors:
Xuefeng Zhang,
Junjie Guo,
Pengfei Guan,
Gaowu Qin,
Stephen J. Pennycook
Abstract:
We have synthesized two Nb@C composites with an order of magnitude difference in the density of single-atom niobium substituted into graphitic layers. The concentration and sites of single-atom Nb are identified using aberration-corrected scanning transmission electron microscopy and density functional theory. Comparing the complex permittivity spectra show that the representative dielectric reson…
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We have synthesized two Nb@C composites with an order of magnitude difference in the density of single-atom niobium substituted into graphitic layers. The concentration and sites of single-atom Nb are identified using aberration-corrected scanning transmission electron microscopy and density functional theory. Comparing the complex permittivity spectra show that the representative dielectric resonance at ~16 GHz originates from the intrinsic polarization of single-atom Nb sites, confirmed by theoretical simulations. The single-atom dielectric resonance represents the physical limit of the electromagnetic response of condensed matter, and thus might open up a new avenue for designing electromagnetic wave absorption materials. Single-atom resonance also has important implications in understanding the correlation between the macroscopic dielectric behaviors and the atomic-scale structural origin.
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Submitted 6 July, 2015;
originally announced July 2015.
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Separable projection integrals for higher-order correlators of the cosmic microwave sky: Acceleration by factors exceeding 100
Authors:
J. P. Briggs,
S. J. Pennycook,
J. R. Fergusson,
J. Jäykkä,
E. P. S. Shellard
Abstract:
We present a case study describing efforts to optimise and modernise "Modal", the simulation and analysis pipeline used by the Planck satellite experiment for constraining general non-Gaussian models of the early universe via the bispectrum (or three-point correlator) of the cosmic microwave background radiation. We focus on one particular element of the code: the projection of bispectra from the…
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We present a case study describing efforts to optimise and modernise "Modal", the simulation and analysis pipeline used by the Planck satellite experiment for constraining general non-Gaussian models of the early universe via the bispectrum (or three-point correlator) of the cosmic microwave background radiation. We focus on one particular element of the code: the projection of bispectra from the end of inflation to the spherical shell at decoupling, which defines the CMB we observe today. This code involves a three-dimensional inner product between two functions, one of which requires an integral, on a non-rectangular domain containing a sparse grid. We show that by employing separable methods this calculation can be reduced to a one-dimensional summation plus two integrations, reducing the overall dimensionality from four to three. The introduction of separable functions also solves the issue of the non-rectangular sparse grid. This separable method can become unstable in certain cases and so the slower non-separable integral must be calculated instead. We present a discussion of the optimisation of both approaches. We show significant speed-ups of ~100x, arising from a combination of algorithmic improvements and architecture-aware optimisations targeted at improving thread and vectorisation behaviour. The resulting MPI/OpenMP hybrid code is capable of executing on clusters containing processors and/or coprocessors, with strong-scaling efficiency of 98.6% on up to 16 nodes. We find that a single coprocessor outperforms two processor sockets by a factor of 1.3x and that running the same code across a combination of both microarchitectures improves performance-per-node by a factor of 3.38x. By making bispectrum calculations competitive with those for the power spectrum (or two-point correlator) we are now able to consider joint analysis for cosmological science exploitation of new data.
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Submitted 26 January, 2016; v1 submitted 30 March, 2015;
originally announced March 2015.
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Orbital occupancy and charge do** in iron-based superconductors
Authors:
Claudia Cantoni,
Jonathan E. Mitchell,
Andrew F. May,
Michael A. McGuire,
Juan-Carlos Idrobo,
Tom Berlijn,
Elbio Dagotto,
Matthew F. Chisholm,
Wu Zhou,
Stephen J. Pennycook,
Athena S. Sefat,
Brian C. Sales
Abstract:
Iron-based superconductors (FBS) comprise several families of compounds having the same atomic building blocks for superconductivity, but large discrepancies among their physical properties. A longstanding goal in the field has been to decipher the key underlying factors controlling TC and the various do** mechanisms. In FBS materials this is complicated immensely by the different crystal and ma…
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Iron-based superconductors (FBS) comprise several families of compounds having the same atomic building blocks for superconductivity, but large discrepancies among their physical properties. A longstanding goal in the field has been to decipher the key underlying factors controlling TC and the various do** mechanisms. In FBS materials this is complicated immensely by the different crystal and magnetic structures exhibited by the different families. In this paper, using aberration-corrected scanning transmission electron microscopy (STEM) coupled with electron energy loss spectroscopy (EELS), we observe a universal behavior in the hole concentration and magnetic moment across different families. All the parent materials have the same total number of electrons in the Fe 3d bands; however, the local Fe magnetic moment varies due to different orbital occupancy. Although the common understanding has been that both long-range and local magnetic moments decrease with do**, we find that, near the onset of superconductivity, the local magnetic moment increases and shows a dome-like maximum near optimal do**, where no ordered magnetic moment is present. In addition, we address a longstanding debate concerning how Co substitutions induces superconductivity in the 122 arsenide family, showing that the 3d band filling increases a function of do**. These new microscopic insights into the properties of FBS demonstrate the importance of spin fluctuations for the superconducting state, reveal changes in orbital occupancy among different families of FBS, and confirm charge do** as one of the mechanisms responsible for superconductivity in 122 arsenides.
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Submitted 3 October, 2014;
originally announced October 2014.
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Competition between covalent bonding and charge transfer at complex-oxide interfaces
Authors:
Juan Salafranca,
Julian Rincon,
Javier Tornos,
Carlos León,
Jacobo Santamaria,
Elbio Dagotto,
Stephen J. Pennycook,
Maria Varela
Abstract:
Here we study the electronic properties of cuprate/manganite interfaces. By means of atomic resolution electron microscopy and spectroscopy, we produce a subnanometer scale map of the transition metal oxidation state profile across the interface between the high $T_c$ superconductor YBa$_2$Cu$_3$O$_{7-δ}$ and the colossal magnetoresistance compound (La,Ca)MnO$_3$. A net transfer of electrons from…
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Here we study the electronic properties of cuprate/manganite interfaces. By means of atomic resolution electron microscopy and spectroscopy, we produce a subnanometer scale map of the transition metal oxidation state profile across the interface between the high $T_c$ superconductor YBa$_2$Cu$_3$O$_{7-δ}$ and the colossal magnetoresistance compound (La,Ca)MnO$_3$. A net transfer of electrons from manganite to cuprate with a peculiar non-monotonic charge profile is observed. Model calculations rationalize the profile in terms of the competition between standard charge transfer tendencies (due to band mismatch), strong chemical bonding effects across the interface, and Cu substitution into the Mn lattice, with different characteristic length scales.
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Submitted 27 June, 2014;
originally announced June 2014.
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Unveiling the microscopic origin of the electronic smectic-nematic phase transition in La1/3Ca2/3MnO3
Authors:
**g Tao,
Kai Sun,
Weiguo Yin,
S. J. Pennycook,
J. M. Tranquada,
Yimei Zhu
Abstract:
Electronic-liquid-crystal phases, in which part of the spatial symmetries are broken spontaneously, are considered to play a vital role in interpreting the structure-property relation in strongly-correlated materials. Although electronic-liquid-crystal phases have been inferred in studies of a wide range of materials, the nature of the transition between such phases has received little experimenta…
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Electronic-liquid-crystal phases, in which part of the spatial symmetries are broken spontaneously, are considered to play a vital role in interpreting the structure-property relation in strongly-correlated materials. Although electronic-liquid-crystal phases have been inferred in studies of a wide range of materials, the nature of the transition between such phases has received little experimental attention. Here we report the direct observation of an electronic smectic-nematic phase transition in a doped manganite utilizing transmission electron microscopic techniques. We show that, in this case, the transition from the smectic to the nematic phase is driven by two mechanisms: the proliferation of dislocations and the development of mesoscale charge inhomogeneity. We observe the development of dislocation pairs within the commensurate smectic phase on approaching the transition (at 210 +/- 10 K) from below. Above the transition, the incommensurate nematic phase is accompanied by mesoscopic electronic phase separation.
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Submitted 27 September, 2014; v1 submitted 27 March, 2014;
originally announced March 2014.
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p-type do** in CVD grown MoS2 using Nb
Authors:
M. Laskar,
D. N. Nath,
L. Ma,
E. Lee,
C. H. Lee,
T. Kent,
Z. Yang,
Rohan Mishra,
Manuel A Roldan,
Juan-Carlos Idrobo,
Sokrates T. Pantelides,
Stephen J. Pennycook,
R. Myers,
Y. Wu,
S. Rajan
Abstract:
We report on the first demonstration of p-type do** in large area few-layer films of (0001)-oriented chemical vapor deposited (CVD) MoS2. Niobium was found to act as an efficient acceptor up to relatively high density in MoS2 films. For a hole density of 4 x 1020 cm-3 Hall mobility of 8.5 cm2V-1s-1 was determined, which matches well with the theoretically expected values. XRD and Raman character…
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We report on the first demonstration of p-type do** in large area few-layer films of (0001)-oriented chemical vapor deposited (CVD) MoS2. Niobium was found to act as an efficient acceptor up to relatively high density in MoS2 films. For a hole density of 4 x 1020 cm-3 Hall mobility of 8.5 cm2V-1s-1 was determined, which matches well with the theoretically expected values. XRD and Raman characterization indicate that the film had good out-of-plane crystalline quality. Absorption measurements showed that the doped sample had similar characteristics to high-quality undoped samples, with a clear absorption edge at 1.8 eV. This demonstration of p-do** in large area epitaxial MoS2 could help in realizing a wide variety of electrical and opto-electronic devices based on layered metal dichalcogenides.
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Submitted 24 October, 2013;
originally announced October 2013.
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Electron transfer and ionic displacements at the origin of the 2D electron gas at the LAO/STO interface: Direct measurements with atomic-column spatial resolution
Authors:
C. Cantoni,
J. Gazquez,
F. Miletto Granozio,
M. P. Oxley,
M. Varela,
A. R. Lupini,
S. J. Pennycook,
C. Aruta,
U. Scotti di Uccio,
P. Perna,
D. Maccariello
Abstract:
The discovery that the interface between two band gap insulators LaAlO3 and SrTiO3 is highly conducting has raised an enormous interest in the field of oxide electronics. The LAlO3/SrTiO3 interface can be tuned using an electric field and switched from a superconducting to an insulating state. Conducting paths in an insulating background can be written applying a voltage with the tip of an atomic…
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The discovery that the interface between two band gap insulators LaAlO3 and SrTiO3 is highly conducting has raised an enormous interest in the field of oxide electronics. The LAlO3/SrTiO3 interface can be tuned using an electric field and switched from a superconducting to an insulating state. Conducting paths in an insulating background can be written applying a voltage with the tip of an atomic force microscope, creating great promise for the development of a new generation of nanoscale electronic devices. However, the mechanism for interface conductivity in LaAlO3/SrTiO3 has remained elusive. The theoretical explanation based on an intrinsic charge transfer (electronic reconstruction) has been strongly challenged by alternative descriptions based on point defects. In this work, thanks to modern aberration-corrected electron probes with atomic-scale spatial resolution, interfacial charge and atomic displacements originating the electric field within the system can be simultaneously measured, yielding unprecedented experimental evidence in favor of an intrinsic electronic reconstruction.
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Submitted 20 June, 2012;
originally announced June 2012.
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Evolution of the nuclear and magnetic structures of TlFe1.6Se2 with temperature
Authors:
Huibo Cao,
Claudia Cantoni,
Andrew F. May,
Michael A. McGuire,
Bryan C. Chakoumakos,
Stephen J. Pennycook,
Radu Custelcean,
Athena S. Sefat,
Brian C. Sales
Abstract:
The evolution of the nuclear and magnetic structures of TlFe$_{1.6}$Se$_2$ was determined in the temperature range of 5-450\,K using single crystal neutron diffraction. The Fe layers in these materials develop a corrugation in the magnetically ordered state. A canting away from the block checkerboard magnetic structure is observed in the narrow temperature range between approximately 100 and 150\,…
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The evolution of the nuclear and magnetic structures of TlFe$_{1.6}$Se$_2$ was determined in the temperature range of 5-450\,K using single crystal neutron diffraction. The Fe layers in these materials develop a corrugation in the magnetically ordered state. A canting away from the block checkerboard magnetic structure is observed in the narrow temperature range between approximately 100 and 150\,K. In this same temperature range, an increase in the corrugation of the Fe layers is observed. At lower temperatures, the block checkerboard magnetic structure is recovered with a suppressed magnetic moment and abrupt changes in the lattice parameters. Microstructure analysis at 300\,K using atomic-resolution Z-contrast scanning transmission electron microscopy reveals regions with ordered and disordered Fe vacancies, and the iron content is found to be uniform across the crystal. These findings highlight the differences between the alkali-metal and thallium materials, and indicate competition between magnetic ground states and a strong coupling of magnetism to the lattice in TlFe$_{1.6}$Se$_2$.
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Submitted 24 February, 2012;
originally announced February 2012.
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Direct Observation of an Interface Dipole between Two Metallic Oxides Caused by Localized Oxygen Vacancies
Authors:
A. Y. Borisevich,
A. R. Lupini,
J. He,
E. A. Eliseev,
A. N. Morozovska,
G. S. Svechnikov,
P. Yu,
Y. H. Chu,
R. Ramesh,
S. T. Pantelides,
S. V. Kalinin,
S. J. Pennycook
Abstract:
Oxygen vacancies are increasingly recognized to play a role in phenomena observed at transition-metal oxide interfaces. Here we report a study of SrRuO3/La0.7Sr0.3MnO3 (SRO/LSMO) interfaces using a combination of quantitative aberration-corrected scanning transmission electron microscopy, electron energy loss spectroscopy, and density-functional calculations. Cation displacements are observed at t…
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Oxygen vacancies are increasingly recognized to play a role in phenomena observed at transition-metal oxide interfaces. Here we report a study of SrRuO3/La0.7Sr0.3MnO3 (SRO/LSMO) interfaces using a combination of quantitative aberration-corrected scanning transmission electron microscopy, electron energy loss spectroscopy, and density-functional calculations. Cation displacements are observed at the interface, indicative of a dipole-like electric field even though both materials are nominally metallic. The observed displacements are reproduced by theory if O vacancies are present in the near-interface LSMO layers. The results suggest that atomic-scale structural map** can serve as a quantitative indicator of the presence of O vacancies at interfaces.
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Submitted 31 October, 2011;
originally announced November 2011.
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Watching Domains Grow: In-situ studies of polarization switching by combined Scanning Probe and Scanning Transmission Electron Microscopy
Authors:
Hyejung Chang,
Sergei V. Kalinin,
Seungyeul Yang,
Pu Yu,
Saswata Bhattacharya,
** P. Wu,
Nina Balke,
Stephen Jesse,
Long Q. Chen,
Ramamoorthy Ramesh,
Stephen J. Pennycook,
Albina Y. Borisevich
Abstract:
Ferroelectric domain nucleation and growth in multiferroic BiFeO3 films is observed directly by applying a local electric field with a conductive tip inside a scanning transmission electron microscope. The nucleation and growth of a ferroelastic domain and its interaction with pre-existing 71^{\circ} domain walls are observed and compared with the results of phase-field modeling. In particular, a…
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Ferroelectric domain nucleation and growth in multiferroic BiFeO3 films is observed directly by applying a local electric field with a conductive tip inside a scanning transmission electron microscope. The nucleation and growth of a ferroelastic domain and its interaction with pre-existing 71^{\circ} domain walls are observed and compared with the results of phase-field modeling. In particular, a preferential nucleation site and direction-dependent pinning of domain walls is observed due to slow kinetics of metastable switching in the sample without a bottom electrode. These in-situ spatially-resolved observations of a first-order bias-induced phase transition reveal the mesoscopic mechanisms underpinning functionality of a wide range of multiferroic materials.
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Submitted 26 April, 2011;
originally announced April 2011.
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Control of the structural and magnetic properties of perovskite oxide ultrathin films through the substrate symmetry effect
Authors:
Jun He,
Albina Borisevich,
Sergei V. Kalinin,
Stephen J. Pennycook,
Sokrates T. Pantelides
Abstract:
Perovskite transition-metal oxides are networks of corner-sharing octahedra whose tilts and distortions are known to affect their electronic and magnetic properties. We report calculations on a model interfacial structure to avoid chemical influences and show that the symmetry mismatch imposes an interfacial layer with distortion modes that do not exist in either bulk material, creating new interf…
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Perovskite transition-metal oxides are networks of corner-sharing octahedra whose tilts and distortions are known to affect their electronic and magnetic properties. We report calculations on a model interfacial structure to avoid chemical influences and show that the symmetry mismatch imposes an interfacial layer with distortion modes that do not exist in either bulk material, creating new interface properties driven by symmetry alone. Depending on the resistance of the octahedra to deformation, the interface layer can be as small as one unit cell or extend deep into the thin film.
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Submitted 29 June, 2010;
originally announced June 2010.
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Suppression of Octahedral Tilts and Associated Changes of Electronic Properties at Epitaxial Oxide Heterostructure Interfaces
Authors:
A. Borisevich,
H. J. Chang,
M. Huijben,
M. P. Oxley,
S. Okamoto,
M. K. Niranjan,
J. D. Burton,
E. Y. Tsymbal,
Y. H. Chu,
P. Yu,
R. Ramesh,
S. V. Kalinin,
S. J. Pennycook
Abstract:
Epitaxial oxide interfaces with broken translational symmetry have emerged as a central paradigm behind the novel behaviors of oxide superlattices. Here, we use scanning transmission electron microscopy to demonstrate a direct, quantitative unit-cell-by-unit-cell map** of lattice parameters and oxygen octahedral rotations across the BiFeO3-La0.7Sr0.3MnO3 interface to elucidate how the change o…
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Epitaxial oxide interfaces with broken translational symmetry have emerged as a central paradigm behind the novel behaviors of oxide superlattices. Here, we use scanning transmission electron microscopy to demonstrate a direct, quantitative unit-cell-by-unit-cell map** of lattice parameters and oxygen octahedral rotations across the BiFeO3-La0.7Sr0.3MnO3 interface to elucidate how the change of crystal symmetry is accommodated. Combined with low-loss electron energy loss spectroscopy imaging, we demonstrate a mesoscopic antiferrodistortive phase transition and elucidate associated changes in electronic properties in a thin layer directly adjacent to the interface.
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Submitted 15 February, 2010;
originally announced February 2010.
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Thickness dependence of the exchange bias in epitaxial manganite bilayers
Authors:
A. L. Kobrinskii,
Maria Varela,
S. J. Pennycook,
A. M. Goldman
Abstract:
Exchange bias has been studied in a series of La2/3Ca1/3MnO3 / La1/3Ca2/3MnO3 bilayers grown on (001) SrTiO3 substrates by ozone-assisted molecular beam epitaxy. The high crystalline quality of the samples and interfaces has been verified using high-resolution X-ray diffractometry and Z-contrast scanning transmission electron microscopy with electron energy loss spectroscopy. The dependence of e…
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Exchange bias has been studied in a series of La2/3Ca1/3MnO3 / La1/3Ca2/3MnO3 bilayers grown on (001) SrTiO3 substrates by ozone-assisted molecular beam epitaxy. The high crystalline quality of the samples and interfaces has been verified using high-resolution X-ray diffractometry and Z-contrast scanning transmission electron microscopy with electron energy loss spectroscopy. The dependence of exchange bias on the thickness of the antiferromagnetic layer has been investigated. A critical value for the onset of the hysteresis loop shift has been determined. An antiferromagnetic anisotropy constant has been obtained by fitting the results to the generalized Meiklejohn-Bean model.
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Submitted 18 September, 2008; v1 submitted 17 April, 2008;
originally announced April 2008.
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Direct measurement of charge transfer phenomena at ferromagnetic/superconducting oxide interfaces
Authors:
M. Varela,
A. R. Lupini,
V. Pena,
Z. Sefrioui,
I. Arslan,
N. D. Browning,
J. Santamaria,
S. J. Pennycook
Abstract:
YBa2Cu3O7-x/La0.67Ca0.33MnO3 ferromagnetic/superconducting interfaces are analyzed by scanning transmission electron microscopy and electron energy loss spectroscopy with monolayer resolution. We demonstrate that extensive charge transfer occurs between the manganite and the superconductor, in a manner similar to modulation-doped semiconductors, which explains the reduced critical temperatures o…
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YBa2Cu3O7-x/La0.67Ca0.33MnO3 ferromagnetic/superconducting interfaces are analyzed by scanning transmission electron microscopy and electron energy loss spectroscopy with monolayer resolution. We demonstrate that extensive charge transfer occurs between the manganite and the superconductor, in a manner similar to modulation-doped semiconductors, which explains the reduced critical temperatures of heterostructures. This behavior is not seen with insulating PrBa2Cu3O7 layers. Furthermore, we confirm directly that holes in the YBa2Cu3O7-x are located on the CuO2 planes.
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Submitted 15 May, 2006; v1 submitted 23 August, 2005;
originally announced August 2005.
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Dopants adsorbed as single atoms prevent degradation of catalysts
Authors:
Sanwu Wang,
Albina Y. Borisevich,
Sergey N. Rashkeev,
Michael V. Glazoff,
Karl Sohlberg,
Stephen J. Pennycook,
Sokrates T. Pantelides
Abstract:
The design of catalysts with desired chemical and thermal properties is viewed as a grand challenge for scientists and engineers. For operation at high temperatures, stability against structural transformations is a key requirement. Although do** has been found to impede degradation, the lack of atomistic understanding of the pertinent mechanism has hindered optimization. For example, porous g…
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The design of catalysts with desired chemical and thermal properties is viewed as a grand challenge for scientists and engineers. For operation at high temperatures, stability against structural transformations is a key requirement. Although do** has been found to impede degradation, the lack of atomistic understanding of the pertinent mechanism has hindered optimization. For example, porous gamma-Al2O3, a widely used catalyst and catalytic support, transforms to non-porous alpha-Al2O3 at ~1,100C. Do** with La raises the transformation temperature to ~1,250C, but it has not been possible to establish if La atoms enter the bulk, adsorb on surfaces as single atoms or clusters, or form surface compounds. Here, we use direct imaging by aberration-corrected Z-contrast scanning transmission electron microscopy coupled with extended X-ray absorption fine structure and first-principles calculations to demonstrate that, contrary to expectations, stabilization is achieved by isolated La atoms adsorbed on the surface. Strong binding and mutual repulsion of La atoms effectively pin the surface and inhibit both sintering and the transformation to alpha-Al2O3. The results provide the first guidelines for the choice of dopants to prevent thermal degradation of catalysts and other porous materials.
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Submitted 10 July, 2004;
originally announced July 2004.
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Spectroscopic imaging of single atoms within a bulk solid
Authors:
M. Varela,
S. D. Findlay,
A. R. Lupini,
H. M. Christen,
A. Y. Borisevich,
N. Dellby,
O. L. Krivanek,
P. D. Nellist,
M. P. Oxley,
L. J. Allen,
S. J. Pennycook,
.
Abstract:
The ability to localize, identify and measure the electronic environment of individual atoms will provide fundamental insights into many issues in materials science, physics and nanotechnology. We demonstrate, using an aberration-corrected scanning transmission microscope, the spectroscopic imaging of single La atoms inside CaTiO3. Dynamical simulations confirm that the spectroscopic information…
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The ability to localize, identify and measure the electronic environment of individual atoms will provide fundamental insights into many issues in materials science, physics and nanotechnology. We demonstrate, using an aberration-corrected scanning transmission microscope, the spectroscopic imaging of single La atoms inside CaTiO3. Dynamical simulations confirm that the spectroscopic information is spatially confined around the scattering atom. Furthermore we show how the depth of the atom within the crystal may be estimated.
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Submitted 28 January, 2004; v1 submitted 9 January, 2004;
originally announced January 2004.
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Direct Correlation between Tc and CuO2 Bilayer Spacing in YBa2Cu3O7-x
Authors:
M. Varela,
D Arias,
Z. Sefrioui,
C. Leon,
C. Ballesteros,
S. J. Pennycook,
J. Santamaria
Abstract:
We report the effects of epitaxial strain and deoxygenation on high quality [YBa2Cu3O7-x (YBCO)_N / PrBa2Cu3O7 (PBCO)_5] (1000 A thick) superlattices, with 1 <= N <= 12 unit cells. High spatial resolution electron energy loss spectroscopy (EELS) shows that strained, fully oxygenated YBCO layers are underdoped. Irrespective of whether underdo** is induced by strain or deoxygenation, X-ray diffr…
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We report the effects of epitaxial strain and deoxygenation on high quality [YBa2Cu3O7-x (YBCO)_N / PrBa2Cu3O7 (PBCO)_5] (1000 A thick) superlattices, with 1 <= N <= 12 unit cells. High spatial resolution electron energy loss spectroscopy (EELS) shows that strained, fully oxygenated YBCO layers are underdoped. Irrespective of whether underdo** is induced by strain or deoxygenation, X-ray diffraction analysis shows that Tc correlates directly with the separation of the CuO2 bilayers.
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Submitted 29 August, 2002;
originally announced August 2002.