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Large zero-bias peaks in InSb-Al hybrid semiconductor-superconductor nanowire devices
Authors:
Hao Zhang,
Michiel W. A. de Moor,
Jouri D. S. Bommer,
Di Xu,
Guanzhong Wang,
Nick van Loo,
Chun-Xiao Liu,
Sasa Gazibegovic,
John A. Logan,
Diana Car,
Roy L. M. Op het Veld,
Petrus J. van Veldhoven,
Sebastian Koelling,
Marcel A. Verheijen,
Mihir Pendharkar,
Daniel J. Pennachio,
Borzoyeh Shojaei,
Joon Sue Lee,
Chris J. Palmstrøm,
Erik P. A. M. Bakkers,
S. Das Sarma,
Leo P. Kouwenhoven
Abstract:
We report electron transport studies on InSb-Al hybrid semiconductor-superconductor nanowire devices. Tunnelling spectroscopy is used to measure the evolution of subgap states while varying magnetic field and voltages applied to various nearby gates. At magnetic fields between 0.7 and 0.9 T, the differential conductance contains large zero bias peaks (ZBPs) whose height reaches values on the order…
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We report electron transport studies on InSb-Al hybrid semiconductor-superconductor nanowire devices. Tunnelling spectroscopy is used to measure the evolution of subgap states while varying magnetic field and voltages applied to various nearby gates. At magnetic fields between 0.7 and 0.9 T, the differential conductance contains large zero bias peaks (ZBPs) whose height reaches values on the order 2e2/h. We investigate these ZBPs for large ranges of gate voltages in different devices. We discuss possible interpretations in terms of disorder-induced subgap states, Andreev bound states and Majorana zero modes.
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Submitted 27 January, 2021;
originally announced January 2021.
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Mechanism for Embedded In-plane Self Assembled Nanowire Formation
Authors:
Nathaniel S Wilson,
Stephan Kraemer,
Daniel J. Pennachio,
Patrick Callahan,
Mihir Pendharkar,
Christopher J Palmstrøm
Abstract:
We report a novel growth mechanism that produces in-plane [1-10] oriented ErSb nanowires formed during codeposition of Er0.3Ga0.7Sb via molecular beam epitaxy (MBE). Nanowires are characterized by in-situ scanning tunneling microscopy (STM), as well as ex-situ transmission electron microscopy (TEM) and electron channeling contrast imaging (ECCI). We show that complexes of macrosteps with step heig…
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We report a novel growth mechanism that produces in-plane [1-10] oriented ErSb nanowires formed during codeposition of Er0.3Ga0.7Sb via molecular beam epitaxy (MBE). Nanowires are characterized by in-situ scanning tunneling microscopy (STM), as well as ex-situ transmission electron microscopy (TEM) and electron channeling contrast imaging (ECCI). We show that complexes of macrosteps with step heights on the order of 7 nm form during nanowire growth. The macrosteps are shown to be part of the in-plane nanowire growth process and are directly responsible for the observed stratified distribution of in-plane nanowires. TEM indicates that initial growth results in out-of-plane nanowires transitioning to in-plane nanowires after a critical film thickness. A surface energy model is put forward that shows the critical thickness is due to minimization of the GaSb{110} surfaces formed during out-of-plane nanowire growth. Kinetics of the transition are discussed with respect to observed features in STM, along with the material parameters needed to achieve in-plane nanowire growth.
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Submitted 18 September, 2019;
originally announced September 2019.
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Selective-area chemical beam epitaxy of in-plane InAs one-dimensional channels grown on InP(001), InP(111)B, and InP(110) surfaces
Authors:
Joon Sue Lee,
Sukgeun Choi,
Mihir Pendharkar,
Dan J. Pennachio,
Brian Markman,
Micheal Seas,
Sebastian Koelling,
Marcel A. Verheijen,
Lucas Casparis,
Karl D. Petersson,
Ivana Petkovic,
Vanessa Schaller,
Mark J. W. Rodwell,
Charles M. Marcus,
Peter Krogstrup,
Leo P. Kouwenhoven,
Erik P. A. M. Bakkers,
Chris J. Palmstrøm
Abstract:
We report on the selective-area chemical beam epitaxial growth of InAs in-plane, one-dimensional (1-D) channels using patterned SiO$_{2}$-coated InP(001), InP(111)B, and InP(110) substrates to establish a scalable platform for topological superconductor networks. Top-view scanning electron micrographs show excellent surface selectivity and dependence of major facet planes on the substrate orientat…
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We report on the selective-area chemical beam epitaxial growth of InAs in-plane, one-dimensional (1-D) channels using patterned SiO$_{2}$-coated InP(001), InP(111)B, and InP(110) substrates to establish a scalable platform for topological superconductor networks. Top-view scanning electron micrographs show excellent surface selectivity and dependence of major facet planes on the substrate orientations and ridge directions, and the ratios of the surface energies of the major facet planes were estimated. Detailed structural properties and defects in the InAs nanowires (NWs) were characterized by transmission electron microscopic analysis of cross-sections perpendicular to the NW ridge direction and along the NW ridge direction. Electrical transport properties of the InAs NWs were investigated using Hall bars, a field effect mobility device, a quantum dot, and an Aharonov-Bohm loop device, which reflect the strong spin-orbit interaction and phase-coherent transport characteristic in the selectively grown InAs systems. This study demonstrates that selective-area chemical beam epitaxy is a scalable approach to realize semiconductor 1-D channel networks with the excellent surface selectivity and this material system is suitable for quantum transport studies.
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Submitted 14 March, 2019; v1 submitted 14 August, 2018;
originally announced August 2018.
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Quantized Majorana conductance
Authors:
Hao Zhang,
Chun-Xiao Liu,
Sasa Gazibegovic,
Di Xu,
John A. Logan,
Guanzhong Wang,
Nick van Loo,
Jouri D. S. Bommer,
Michiel W. A. de Moor,
Diana Car,
Roy L. M. Op het Veld,
Petrus J. van Veldhoven,
Sebastian Koelling,
Marcel A. Verheijen,
Mihir Pendharkar,
Daniel J. Pennachio,
Borzoyeh Shojaei,
Joon Sue Lee,
Chris J. Palmstrom,
Erik P. A. M. Bakkers,
S. Das Sarma,
Leo P. Kouwenhoven
Abstract:
Majorana zero-modes hold great promise for topological quantum computing. Tunnelling spectroscopy in electrical transport is the primary tool to identify the presence of Majorana zero-modes, for instance as a zero-bias peak (ZBP) in differential-conductance. The Majorana ZBP-height is predicted to be quantized at the universal conductance value of 2e2/h at zero temperature. Interestingly, this qua…
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Majorana zero-modes hold great promise for topological quantum computing. Tunnelling spectroscopy in electrical transport is the primary tool to identify the presence of Majorana zero-modes, for instance as a zero-bias peak (ZBP) in differential-conductance. The Majorana ZBP-height is predicted to be quantized at the universal conductance value of 2e2/h at zero temperature. Interestingly, this quantization is a direct consequence of the famous Majorana symmetry, 'particle equals antiparticle'. The Majorana symmetry protects the quantization against disorder, interactions, and variations in the tunnel coupling. Previous experiments, however, have shown ZBPs much smaller than 2e2/h, with a recent observation of a peak-height close to 2e2/h. Here, we report a quantized conductance plateau at 2e2/h in the zero-bias conductance measured in InSb semiconductor nanowires covered with an Al superconducting shell. Our ZBP-height remains constant despite changing parameters such as the magnetic field and tunnel coupling, i.e. a quantized conductance plateau. We distinguish this quantized Majorana peak from possible non-Majorana origins, by investigating its robustness on electric and magnetic fields as well as its temperature dependence. The observation of a quantized conductance plateau strongly supports the existence of non-Abelian Majorana zero-modes in the system, consequently paving the way for future braiding experiments.
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Submitted 29 October, 2017;
originally announced October 2017.
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On the limits to mobility in InAs quantum wells with nearly lattice-matched barriers
Authors:
B. Shojaei,
A. C. C. Drachmann,
M. Pendharkar,
D. J. Pennachio,
M. P. Echlin,
P. G. Callahan,
S. Kraemer,
T. M. Pollock,
C. M. Marcus,
C. J. Palmstrøm
Abstract:
The growth and the density dependence of the low temperature mobility of a series of two-dimensional electron systems confined to un-intentionally doped, low extended defect density InAs quantum wells with Al$_{1-x}$Ga$_{x}$Sb barriers are reported. The electron mobility limiting scattering mechanisms were determined by utilizing dual-gated devices to study the dependence of mobility on carrier de…
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The growth and the density dependence of the low temperature mobility of a series of two-dimensional electron systems confined to un-intentionally doped, low extended defect density InAs quantum wells with Al$_{1-x}$Ga$_{x}$Sb barriers are reported. The electron mobility limiting scattering mechanisms were determined by utilizing dual-gated devices to study the dependence of mobility on carrier density and electric field independently. Analysis of the possible scattering mechanisms indicate the mobility was limited primarily by rough interfaces in narrow quantum wells and a combination of alloy disorder and interface roughness in wide wells at high carrier density within the first occupied electronic sub-band. At low carrier density the functional dependence of the mobility on carrier density provided evidence of coulombic scattering from charged defects. A gate-tuned electron mobility exceeding 750,000 cm$^{2}$/Vs was achieved at a sample temperature of 2 K.
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Submitted 13 October, 2016; v1 submitted 12 October, 2016;
originally announced October 2016.
