Thickness and temperature dependence of the atomic-scale structure of SrRuO$_3$ thin films
Authors:
Xuanyi Zhang,
Aubrey N. Penn,
Lena Wysocki,
Zhan Zhang,
Paul H. M. van Loosdrecht,
Lior Kornblum,
James M. LeBeau,
Ionela Lindfors-Vrejoiu,
Divine P. Kumah
Abstract:
Due to the strong lattice-property relationships which exist in complex oxide epitaxial layers, their electronic and magnetic properties can be modulated by structural distortions induced at the atomic scale. The modification and control can be affected at coherent heterointerfaces by epitaxial strain imposed by the substrate or by structural modifications to accommodate the film-substrate symmetr…
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Due to the strong lattice-property relationships which exist in complex oxide epitaxial layers, their electronic and magnetic properties can be modulated by structural distortions induced at the atomic scale. The modification and control can be affected at coherent heterointerfaces by epitaxial strain imposed by the substrate or by structural modifications to accommodate the film-substrate symmetry mismatch. Often these act in conjunction with a strong dependence on the layer thickness, especially for ultrathin layers. Moreover, as a result of these effects, the temperature dependence of the structure may deviate largely from that of the bulk. The temperature-dependent structure of 3 to 44 unit cell thick ferromagnetic SrRuO$_3$ films grown on Nb-doped SrTiO$_3$ substrates are investigated using a combination of high-resolution synchrotron X-ray diffraction and high-resolution electron microscopy. This aims to shed light on the intriguing magnetic and magnetotransport properties of epitaxial SRO layers, subjected to extensive investigations lately. The oxygen octahedral tilts and rotations are found to be strongly dependent on the temperature, the film thickness, and the distance away from the film-substrate interface. As a striking manifestation of the coupling between magnetic order and lattice structure, the Invar effect is observed below the ferromagnetic transition temperature in epitaxial layers as thin as 8 unit cells, similar to bulk ferromagnetic SrRuO$_3$.
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Submitted 3 February, 2022;
originally announced February 2022.
Tuning band alignment at a semiconductor-crystalline oxide heterojunction via electrostatic modulation of the interfacial dipole
Authors:
M. Chrysler,
J. Gabel,
T. -L. Lee,
A. N. Penn,
B. E. Matthews,
D. M. Kepaptsoglou,
Q. M. Ramasse,
J. R. Paudel,
R. K. Sah,
J. D. Grassi,
Z. Zhu,
A. X. Gray,
J. M. LeBeau,
S. R. Spurgeon,
S. A. Chambers,
P. V. Sushko,
J. H. Ngai
Abstract:
We demonstrate that the interfacial dipole associated with bonding across the SrTiO3/Si heterojunction can be tuned through space charge, thereby enabling the band alignment to be altered via do**. Oxygen impurities in Si act as donors that create space charge by transferring electrons across the interface into SrTiO3. The space charge induces an electric field that modifies the interfacial dipo…
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We demonstrate that the interfacial dipole associated with bonding across the SrTiO3/Si heterojunction can be tuned through space charge, thereby enabling the band alignment to be altered via do**. Oxygen impurities in Si act as donors that create space charge by transferring electrons across the interface into SrTiO3. The space charge induces an electric field that modifies the interfacial dipole, thereby tuning the band alignment from type-II to type-III. The transferred charge, resulting in built-in electric fields, and change in band alignment are manifested in electrical transport and hard x-ray photoelectron spectroscopy measurements. Ab initio models reveal the interplay between polarization and band offsets. We find that band offsets can be tuned by modulating the density of space charge across the interface. Functionalizing the interface dipole to enable electrostatic altering of band alignment opens new pathways to realize novel behavior in semiconducting heterojunctions.
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Submitted 27 May, 2021;
originally announced May 2021.
