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Understanding and Minimizing $V_{OC}$ Losses in All-Perovskite Tandem Photovoltaics
Authors:
Jarla Thiesbrummel,
Francisco Peña-Camargo,
Kai Oliver Brinkmann,
Emilio Gutierrez-Partida,
Fengjiu Yang,
Jonathan Warby,
Steve Albrecht,
Dieter Neher,
Thomas Riedl,
Henry J. Snaith,
Martin Stolterfoht,
Felix Lang
Abstract:
All-perovskite tandem solar cells promise high photovoltaic performance at low cost. So far however, their efficiencies cannot compete with traditional inorganic multi-junction solar cells and they generally underperform in comparison to what is expected from the isolated single junction devices. Understanding performance losses in all-perovskite tandem solar cells is a crucial aspect that will ac…
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All-perovskite tandem solar cells promise high photovoltaic performance at low cost. So far however, their efficiencies cannot compete with traditional inorganic multi-junction solar cells and they generally underperform in comparison to what is expected from the isolated single junction devices. Understanding performance losses in all-perovskite tandem solar cells is a crucial aspect that will accelerate advancement. Here, we perform extensive selective characterization of the individual sub-cells to disentangle the different losses and limiting factors in these tandem devices. We find that non-radiative losses in the high-gap subcell dominate the overall recombination losses in our baseline system as well as in the majority of literature reports. We consecutively improve the high-gap perovskite subcell through a multi-faceted approach, allowing us to enhance the open-circuit voltage ($V_{OC}$) of the subcell by up to 120 mV. Due to the (quasi) lossless indium oxide interconnect which we employ for the first time in all-perovskite tandems, the $V_{OC}$ improvements achieved in the high-gap perovskites translate directly to improved all-perovskite tandem solar cells with a champion $V_{OC}$ of 2.00 V and a stabilized efficiency of 23.7%. The efficiency potential of our optimized all-perovskite tandems reaches 25.2% and 27.0% when determined from electro- and photo-luminescence respectively, indicating significant transport losses as well as imperfect energy-alignment between the perovskite and the transport layers in the experimental devices. Further improvements to 28.4% are possible considering the bulk quality of both absorbers measured using photo-luminescence on isolated perovskite layers. Our insights therefore not only show an optimization example but a generalizable evidence-based strategy for optimization utilizing optical sub-cell characterization.
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Submitted 20 July, 2022;
originally announced July 2022.
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Revealing the do** density in perovskite solar cells and its impact on device performance
Authors:
Francisco Peña-Camargo,
Jarla Thiesbrummel,
Hannes Hempel,
Artem Musiienko,
Vincent M. Le Corre,
Jonas Diekmann,
Jonathan Warby,
Thomas Unold,
Felix Lang,
Dieter Neher,
Martin Stolterfoht
Abstract:
Traditional inorganic semiconductors can be electronically doped with high precision. Conversely, there is still conjecture regarding the assessment of the electronic do** density in metal-halide perovskites, not to mention of a control thereof. This paper presents a multifaceted approach to determine the electronic do** density for a range of different lead-halide perovskite systems. Optical…
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Traditional inorganic semiconductors can be electronically doped with high precision. Conversely, there is still conjecture regarding the assessment of the electronic do** density in metal-halide perovskites, not to mention of a control thereof. This paper presents a multifaceted approach to determine the electronic do** density for a range of different lead-halide perovskite systems. Optical and electrical characterisation techniques comprising intensity-dependent and transient photoluminescence, AC Hall effect, transfer-length-methods, and charge extraction measurements were instrumental in quantifying an upper limit for the do** density. The obtained values are subsequently compared to the charge on the electrodes per unit volume at short-circuit conditions, which amounts to roughly $10^{16}$ cm$^{-3}$. This figure equals the product of the capacitance $C$ and the built-in potential $V_\mathrm{bi}$ and represents the critical limit below which do**-induced charges do not influence the device performance. The experimental results demonstrate consistently that the do** density is below this critical threshold ($<10^{12}$ cm$^{-3}$ which means $<CV_\mathrm{bi}$ per unit volume) for all common lead-based metal-halide perovskites. Nevertheless, although the density of do**-induced charges is too low to redistribute the built-in voltage in the perovskite active layer, mobile ions are present in sufficient quantities to create space-charge-regions in the active layer, reminiscent of doped pn-junctions. These results are well supported by drift-diffusion simulations which confirm that the device performance is not affected by such low do** densities.
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Submitted 14 January, 2022;
originally announced January 2022.
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Pathways towards 30% efficient single-junction perovskite solar cells and the role of mobile ions
Authors:
Jonas Diekmann,
Pietro Caprioglio,
Moritz H. Futscher,
Vincent M. Le Corre,
Sebastian Reichert,
Frank Jaiser,
Malavika Arvind,
Lorena Perdigon Toro,
Emilio Gutierrez-Partida,
Francisco Pena-Camargo,
Carsten Deibel,
Bruno Ehrler,
Thomas Unold,
Thomas Kirchartz,
Dieter Neher,
Martin Stolterfoht
Abstract:
Perovskite semiconductors have demonstrated outstanding external luminescence quantum yields, enabling high power conversion efficiencies (PCE). However, the precise conditions to advance to an efficiency regime above monocrystalline silicon cells are not well understood. Here, we establish a simulation model that well describes efficient p-i-n type perovskite solar cells and a range of different…
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Perovskite semiconductors have demonstrated outstanding external luminescence quantum yields, enabling high power conversion efficiencies (PCE). However, the precise conditions to advance to an efficiency regime above monocrystalline silicon cells are not well understood. Here, we establish a simulation model that well describes efficient p-i-n type perovskite solar cells and a range of different experiments. We then study important device and material parameters and we find that an efficiency regime of 30% can be unlocked by optimizing the built-in potential across the perovskite layer by using either highly doped (10^19 cm-3), thick transport layers (TLs) or ultrathin undoped TLs, e.g. self-assembled monolayers. Importantly, we only consider parameters that have been already demonstrated in recent literature, that is a bulk lifetime of 10 us, interfacial recombination velocities of 10 cm/s, a perovskite bandgap of 1.5 eV and an EQE of 95%. A maximum efficiency of 31% is predicted for a bandgap of 1.4 eV. Finally, we demonstrate that the relatively high mobile ion density does not represent a significant barrier to reach this efficiency regime. Thus, the results of this paper promise continuous PCE improvements until perovskites may become the most efficient single-junction solar cell technology in the near future.
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Submitted 25 April, 2021; v1 submitted 16 October, 2019;
originally announced October 2019.
