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Manipulation of the electrical and memory properties of MoS$_2$ field-effect transistors by highly charged ion irradiation
Authors:
Stephan Sleziona,
Aniello Pelella,
Enver Faella,
Osamah Kharsah,
Lucia Skopinski,
Andre Maas,
Yossarian Liebsch,
Antonio Di Bartolomeo,
Marika Schleberger
Abstract:
Field-effect transistors based on molybdenum disulfide (MoS$_2$) exhibit a hysteresis in their transfer characteristics, which can be utilized to realize 2D memory devices. This hysteresis has been attributed to charge trap** due to adsorbates, or defects either in the MoS$_2$ lattice or in the underlying substrate. We fabricated MoS$_2$ field-effect transistors on SiO$_2$/Si substrates, irradia…
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Field-effect transistors based on molybdenum disulfide (MoS$_2$) exhibit a hysteresis in their transfer characteristics, which can be utilized to realize 2D memory devices. This hysteresis has been attributed to charge trap** due to adsorbates, or defects either in the MoS$_2$ lattice or in the underlying substrate. We fabricated MoS$_2$ field-effect transistors on SiO$_2$/Si substrates, irradiated these devices with Xe$^{30+}$ ions at a kinetic energy of 180 keV to deliberately introduce defects and studied the resulting changes of their electrical and hysteretic properties. We find clear influences of the irradiation: While the charge carrier mobility decreases linearly with increasing ion fluence (up to only 20% of its initial value) the conductivity actually increases again after an initial drop of around two orders of magnitude, likely due to the occurence of hop** transport via localized states. We also find a significantly reduced $n$-do** ($\approx$ 10$^{12}$ per cm$^{2}$) and a well-developed hysteresis after the irradiation. The hysteresis height increases with increasing ion fluence and enables us to characterize the irradiated MoS$_2$ field-effect transistor as a memory device with remarkably longer relaxation times ($\approx$ minutes) compared to previous works.
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Submitted 7 June, 2023;
originally announced June 2023.
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Memory effects in black phosphorus field effect transistors
Authors:
Alessandro Grillo,
Aniello Pelella,
Enver Faella,
Filippo Giubileo,
Stephan Sleziona,
Osamah Kharsah,
Marika Schleberger,
Antonio Di Bartolomeo
Abstract:
We report the fabrication and the electrical characterization of back-gated field effect transistors with black phosphorus channel. We show that the hysteresis of the transfer characteristic, due to intrinsic defects, can be exploited to realize non-volatile memories. We demonstrate that gate voltage pulses allow to trap and store charge inside the defect states, which enable memory devices with e…
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We report the fabrication and the electrical characterization of back-gated field effect transistors with black phosphorus channel. We show that the hysteresis of the transfer characteristic, due to intrinsic defects, can be exploited to realize non-volatile memories. We demonstrate that gate voltage pulses allow to trap and store charge inside the defect states, which enable memory devices with endurance over 200 cycles and retention longer than 30 minutes. We show that the use of a protective poly (methyl methacrylate) layer, positioned on top of the black phosphorus channel, does not affect the electrical properties of the device but avoids the degradation caused by the exposure to air.
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Submitted 15 October, 2021;
originally announced October 2021.
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Coexistence of negative and positive photoconductivity in few-layer PtSe2 field-effect transistors
Authors:
Alessandro Grillo,
Enver Faella,
Aniello Pelella,
Filippo Giubileo,
Lida Ansari,
Farzan Gity,
Paul K. Hurley,
Niall McEvoy,
Antonio Di Bartolomeo
Abstract:
Platinum diselenide (PtSe_2) field-effect transistors with ultrathin channel regions exhibit p-type electrical conductivity that is sensitive to temperature and environmental pressure. Exposure to a supercontinuum white light source reveals that positive and negative photoconductivity coexists in the same device. The dominance of one type of photoconductivity over the other is controlled by enviro…
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Platinum diselenide (PtSe_2) field-effect transistors with ultrathin channel regions exhibit p-type electrical conductivity that is sensitive to temperature and environmental pressure. Exposure to a supercontinuum white light source reveals that positive and negative photoconductivity coexists in the same device. The dominance of one type of photoconductivity over the other is controlled by environmental pressure. Indeed, positive photoconductivity observed in high vacuum converts to negative photoconductivity when the pressure is rised. Density functional theory calculations confirm that physisorbed oxygen molecules on the PtSe_2 surface act as acceptors. The desorption of oxygen molecules from the surface, caused by light irradiation, leads to decreased carrier concentration in the channel conductivity. The understanding of the charge transfer occurring between the physisorbed oxygen molecules and the PtSe_2 film provides an effective route for modulating the density of carriers and the optical properties of the material.
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Submitted 20 July, 2021;
originally announced July 2021.
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Graphene-silicon device for visible and infrared photodetection
Authors:
Aniello Pelella,
Alessandro Grillo,
Enver Faella,
Giuseppe Luongo,
Mohammad Bagher Askari,
Antonio Di Bartolomeo
Abstract:
The fabrication of graphene-silicon (Gr-Si) junction inolves the formation of a parallel metal-insulator-semiconductor (MIS) structure, which is often disregarded but plays an important role in the optoelectronic properties of the device. In this work, the transfer of graphene onto a patterned n-type Si substrate, covered by $Si_3N_4$, produces a Gr-Si device in which the parallel MIS consists of…
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The fabrication of graphene-silicon (Gr-Si) junction inolves the formation of a parallel metal-insulator-semiconductor (MIS) structure, which is often disregarded but plays an important role in the optoelectronic properties of the device. In this work, the transfer of graphene onto a patterned n-type Si substrate, covered by $Si_3N_4$, produces a Gr-Si device in which the parallel MIS consists of a $Gr-Si_3N_4-Si$ structure surrounding the Gr-Si junction. The Gr-Si device exhibits rectifying behavior with a rectification ratio up to $10^4$. The investigation of its temperature behavior is necessary to accurately estimate the Schottky barrier height at zero bias, $φ_{b0}=0.24 eV$, the effective Richardson's constant, $A^*=7 \cdot 10^{-10} AK^{-2}cm^{-2}$, and the diode ideality factor n=2.66 of the Gr-Si junction. The device is operated as a photodetector in both photocurrent and photovoltage mode in the visible and infrared (IR) spectral regions. A responsivity up to 350 mA/W and external quantum efficiency (EQE) up to 75% is achieved in the 500-1200 nm wavelength range. A decrease of responsivity to 0.4 mA/W and EQE to 0.03% is observed above 1200 nm, that is in the IR region beyond the silicon optical bandgap, in which photoexcitation is driven by graphene. Finally, a model based on two back-to-back diodes, one for the Gr-Si junction. the other for the $Gr-Si_3N_4-Si$ MIS structure, is proposed to explain the electrical behavior of the Gr-Si device.
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Submitted 20 May, 2021;
originally announced May 2021.
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Gate-controlled field emission current from MoS$_2$ nanosheets
Authors:
Aniello Pelella,
Alessandro Grillo,
Francesca Urban,
Filippo Giubileo,
Maurizio Passacantando,
Erik Pollmann,
Stephan Sleziona,
Marika Schleberger,
Antonio Di Bartolomeo
Abstract:
Monolayer molybdenum disulfide (MoS$_2$) nanosheets, obtained via chemical vapor deposition onto SiO$_2$/Si substrates, are exploited to fabricate field-effect transistors with n-type conduction, high on/off ratio, steep subthreshold slope and good mobility. The transistor channel conductance increases with the reducing air pressure due to oxygen and water desorption. Local field emission measurem…
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Monolayer molybdenum disulfide (MoS$_2$) nanosheets, obtained via chemical vapor deposition onto SiO$_2$/Si substrates, are exploited to fabricate field-effect transistors with n-type conduction, high on/off ratio, steep subthreshold slope and good mobility. The transistor channel conductance increases with the reducing air pressure due to oxygen and water desorption. Local field emission measurements from the edges of the MoS$_2$ nanosheets are performed in high vacuum using a tip-shaped anode. It is demonstrated that the voltage applied to the Si substrate back-gate modulates the field emission current. Such a finding, that we attribute to gate-bias lowering of the MoS$_2$ electron affinity, enables a new field-effect transistor based on field emission.
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Submitted 22 August, 2020;
originally announced August 2020.
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Vacuum gauge from ultrathin MoS2 transistor
Authors:
A. Di Bartolomeo,
A. Pelella,
A. Grillo,
F. Urban,
L. Iemmo,
E. Faella,
N. Martucciello,
F. Giubileo
Abstract:
We fabricate monolayer MoS2 field effect transistors and study their electric characteristics from 10^-6 Torr to atmospheric air pressure. We show that the threshold voltage of the transistor increases with the growing pressure. Hence, we propose the device as an air pressure sensor, showing that it is particularly suitable as a low power consumption vacuum gauge. The device functions on pressure-…
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We fabricate monolayer MoS2 field effect transistors and study their electric characteristics from 10^-6 Torr to atmospheric air pressure. We show that the threshold voltage of the transistor increases with the growing pressure. Hence, we propose the device as an air pressure sensor, showing that it is particularly suitable as a low power consumption vacuum gauge. The device functions on pressure-dependent O2, N2 and H2O molecule adsorption that affect the n-do** of the MoS2 channel.
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Submitted 8 June, 2020;
originally announced June 2020.
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Field emission characteristics of InSb patterned nanowires
Authors:
Filippo Giubileo,
Maurizio Passacantando,
Francesca Urban,
Alessandro Grillo,
Laura Iemmo,
Aniello Pelella,
Curtis Goosney,
Ray LaPierre,
Antonio Di Bartolomeo
Abstract:
InSb nanowire arrays with different geometrical parameters, diameter and pitch, are fabricated by top-down etching process on Si(100) substrates. Field emission properties of InSb nanowires are investigated by using a nano-manipulated tungsten probe-tip as anode inside the vacuum chamber of a scanning electron microscope. Stable field emission current is reported, with a maximum intensity extracte…
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InSb nanowire arrays with different geometrical parameters, diameter and pitch, are fabricated by top-down etching process on Si(100) substrates. Field emission properties of InSb nanowires are investigated by using a nano-manipulated tungsten probe-tip as anode inside the vacuum chamber of a scanning electron microscope. Stable field emission current is reported, with a maximum intensity extracted from a single nanowire of about 1$μA$, corresponding to a current density as high as 10$^4$ A/cm$^2$. Stability and robustness of nanowire is probed by monitoring field emission current for about three hours. By tuning the cathode-anode separation distance in the range 500nm - 1300nm, the field enhancement factor and the turn-on field exhibit a non-monotonic dependence, with a maximum enhancement $β\simeq $ 78 and a minimum turn-on field $E_{ON} \simeq$ 0.033 V/nm for a separation d =900nm. The reduction of spatial separation between nanowires and the increase of diameter cause the reduction of the field emission performance, with reduced field enhancement ($β<$ 60) and increased turn-on field ($E_{ON} \simeq $ 0.050 V/nm). Finally, finite element simulation of the electric field distribution in the system demonstrates that emission is limited to an effective area near the border of the nanowire top surface, with annular shape and maximum width of 10 nm.
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Submitted 28 April, 2020;
originally announced April 2020.
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Electron irradiation of metal contacts in monolayer MoS$_2$ Field-Effect Transistors
Authors:
A. Pelella,
O. Kharsah,
A. Grillo,
F. Urban,
M. Passacantando,
F. Giubileo,
L. Iemmo,
S. Sleziona,
E. Pollmann,
L. Madauß,
M. Schleberger,
A. Di Bartolomeo
Abstract:
This work deals with the electron beam irradiation of the Schottky metal contacts in monolayer molybdenum disulfide (MoS$_2$) field-effect transistors (FETs). We show that the exposure of the Ti/Au source/drain leads to an electron beam improves the transistor conductance. We simulate the path of the electrons in the device and show that most of the beam energy is absorbed in the metal contacts. H…
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This work deals with the electron beam irradiation of the Schottky metal contacts in monolayer molybdenum disulfide (MoS$_2$) field-effect transistors (FETs). We show that the exposure of the Ti/Au source/drain leads to an electron beam improves the transistor conductance. We simulate the path of the electrons in the device and show that most of the beam energy is absorbed in the metal contacts. Hence, we propose that the transistor current enhancement is due to thermally induced interfacial reactions that lower the contact Schottky barriers. We also show that the electron beam conditioning of contacts is permanent, while the irradiation of the channel can produce transient effects.
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Submitted 2 April, 2020;
originally announced April 2020.
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Electron irradiation on multilayer PdSe$_2$ field effect transistors
Authors:
A. Di Bartolomeo,
F. Urban,
A. Pelella,
A. Grillo,
M. Passacantando,
X. Liu,
F. Giubileo
Abstract:
Palladium diselenide (PdSe2) is a recently isolated layered material that has attracted a lot of interest for the pentagonal structure, the air stability and the electrical properties largely tunable by the number of layers. In this work, PdSe2 is used in the form of multilayer as the channel of back-gate field-effect transistors, which are studied under repeated electron irradiations. Source-drai…
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Palladium diselenide (PdSe2) is a recently isolated layered material that has attracted a lot of interest for the pentagonal structure, the air stability and the electrical properties largely tunable by the number of layers. In this work, PdSe2 is used in the form of multilayer as the channel of back-gate field-effect transistors, which are studied under repeated electron irradiations. Source-drain Pd leads enable contacts with resistance below 350 kOhm um. The transistors exhibit a prevailing n-type conduction in high vacuum, which reversibly turns into ambipolar electric transport at atmospheric pressure. Irradiation by 10 keV electrons suppresses the channel conductance and promptly transforms the device from n-type to p-type. An electron fluence as low as 160 e-/nm2 dramatically change the transistor behavior demonstrating a high sensitivity of PdSe2 to electron irradiation. The sensitivity is lost after few exposures, that is a saturation condition is reached for fluence higher than 4000 e-/nm2. The damage induced by high electron fluence is irreversible as the device persist in the radiation-modified state for several hours, if kept in vacuum and at room temperature. With the support of numerical simulation, we explain such a behavior by electron-induced Se atom vacancy formation and charge trap** in slow trap states at the Si/SiO_2 interface.
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Submitted 22 February, 2020;
originally announced February 2020.
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Field emission in ultrathin PdSe2 back-gated transistors
Authors:
A. Di Bartolomeo,
A. Pelella,
F. Urban,
A. Grillo,
L. Iemmo,
M. Passacantando,
X. Liu,
F. Giubileo
Abstract:
We study the electrical transport in back-gate field-effect transistors with ultrathin palladium diselenide (PdSe2) channel. The devices are normally-on and exhibit dominant n-type conduction at low pressure. The electron conduction, combined with the sharp edge and the workfunction decreasing with the number of layers, opens the way to applications of PdSe2 nanosheets in vacuum electronics. In th…
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We study the electrical transport in back-gate field-effect transistors with ultrathin palladium diselenide (PdSe2) channel. The devices are normally-on and exhibit dominant n-type conduction at low pressure. The electron conduction, combined with the sharp edge and the workfunction decreasing with the number of layers, opens the way to applications of PdSe2 nanosheets in vacuum electronics. In this work, we demonstrate field emission from few-layer PdSe2 nanosheets with current up to the uA and turn-on field below 100 V/um, thus extending the plethora of applications of this recently isolated pentagonal layered material.
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Submitted 13 February, 2020;
originally announced February 2020.
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Field Emission Characterization of MoS2 Nanoflowers
Authors:
Filippo Giubileo,
Alessandro Grillo,
Maurizio Passacantando,
Francesca Urban,
Laura Iemmo,
Giuseppe Luongo,
Aniello Pelella,
Melanie Loveridge,
Luca Lozzi,
Antonio Di Bartolomeo
Abstract:
Nanostructured materials have wide potential applicability as field emitters due to their high aspect ratio. We hydrothermally synthesized MoS2 nanoflowers on copper foil and characterized their field emission properties, by applying a tip-anode configuration in which a tungsten tip with curvature radius down to 30-100nm has been used as the anode to measure local properties from small areas down…
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Nanostructured materials have wide potential applicability as field emitters due to their high aspect ratio. We hydrothermally synthesized MoS2 nanoflowers on copper foil and characterized their field emission properties, by applying a tip-anode configuration in which a tungsten tip with curvature radius down to 30-100nm has been used as the anode to measure local properties from small areas down to 1-100um2. We demonstrate that MoS2 nanoflowers can be competitive with other well-established field emitters. Indeed, we show that a stable field emission current can be measured with a turn-on field as low as 12 V um-1 and a field enhancement factor up to 880 at 600nm cathode-anode separation distance.
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Submitted 18 June, 2019;
originally announced June 2019.
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Pressure-Tunable Ambipolar Conduction and Hysteresis in Ultrathin Palladium Diselenide Field Effect Transistors
Authors:
Antonio Di Bartolomeo,
Aniello Pelella,
Xiaowei Liu,
Feng Miao,
Maurizio Passacantando,
Filippo Giubileo,
Alessandro Grillo,
Laura Iemmo,
Francesca Urban,
Shi-Jun Liang
Abstract:
A few-layer palladium diselenide (PdSe2) field effect transistor is studied under external stimuli such as electrical and optical fields, electron irradiation and gas pressure. We observe ambipolar conduction and hysteresis in the transfer curves of the PdSe2 material unprotected and as-exfoliated. We tune the ambipolar conduction and its hysteretic behavior in the air and pure nitrogen environmen…
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A few-layer palladium diselenide (PdSe2) field effect transistor is studied under external stimuli such as electrical and optical fields, electron irradiation and gas pressure. We observe ambipolar conduction and hysteresis in the transfer curves of the PdSe2 material unprotected and as-exfoliated. We tune the ambipolar conduction and its hysteretic behavior in the air and pure nitrogen environments. The prevailing p-type transport observed at room pressure is reversibly turned into dominant n-type conduction by reducing the pressure, which can simultaneously suppress the hysteresis. The pressure control can be exploited to symmetrize and stabilize the transfer characteristic of the device as required in high-performance logic circuits. The transistor is immune from short channel effects but is affected by trap states with characteristic times in the order of minutes. The channel conductance, dramatically reduced by the electron irradiation during scanning electron microscope imaging, is restored after several minutes anneal at room temperature. The work paves the way toward the exploitation of PdSe2 in electronic devices by providing an experiment-based and deeper understanding of charge transport in PdSe2 transistors subjected to electrical stress and other external agents.
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Submitted 1 February, 2019;
originally announced February 2019.
