SEPIA - a new single pixel receiver at the APEX Telescope
Authors:
V. Belitsky,
I. Lapkin,
M. Fredrixon,
D. Meledin,
E. Sundin,
B. Billade,
S. -E. Ferm,
A. Pavolotsky,
H. Rashid,
M. Strandberg,
V. Desmaris,
A. Ermakov,
S. Krause,
M. Olberg,
P. Aghdam,
S. Shafiee,
P. Bergman,
E. De Beck,
H. Olofsson,
J. Conway,
C. De Breuck,
K. Immer,
P. Yagoubov,
F. M. Montenegro-Montes,
K. Torstensson
, et al. (9 additional authors not shown)
Abstract:
Context: We describe the new SEPIA (Swedish-ESO PI Instrument for APEX) receiver, which was designed and built by the Group for Advanced Receiver Development (GARD), at Onsala Space Observatory (OSO) in collaboration with ESO. It was installed and commissioned at the APEX telescope during 2015 with an ALMA Band 5 receiver channel and updated with a new frequency channel (ALMA Band 9) in February 2…
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Context: We describe the new SEPIA (Swedish-ESO PI Instrument for APEX) receiver, which was designed and built by the Group for Advanced Receiver Development (GARD), at Onsala Space Observatory (OSO) in collaboration with ESO. It was installed and commissioned at the APEX telescope during 2015 with an ALMA Band 5 receiver channel and updated with a new frequency channel (ALMA Band 9) in February 2016. Aims: This manuscript aims to provide, for observers who use the SEPIA receiver, a reference in terms of the hardware description, optics and performance as well as the commissioning results. Methods: Out of three available receiver cartridge positions in SEPIA, the two current frequency channels, corresponding to ALMA Band 5, the RF band 158--211 GHz, and Band 9, the RF band 600--722 GHz, provide state-of-the-art dual polarization receivers. The Band 5 frequency channel uses 2SB SIS mixers with an average SSB noise temperature around 45K with IF (intermediate frequency) band 4--8 GHz for each sideband providing total 4x4 GHz IF band. The Band 9 frequency channel uses DSB SIS mixers with a noise temperature of 75--125K with IF band 4--12 GHz for each polarization. Results: Both current SEPIA receiver channels are available to all APEX observers.
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Submitted 20 December, 2017;
originally announced December 2017.
Multilayer technique developed for fabricating Nb-based single-electron devices
Authors:
Alexey B. Pavolotsky,
Thomas Weimann,
Hansjoerg Scherer,
Vladimir A. Krupenin,
Juergen Niemeyer,
Alexander B. Zorin
Abstract:
A reliable process has been developed for the fabrication of all-Nb single-electron circuits, based on spin-on glass planarization. The process steps are the in situ growth of Nb/AlOx/Nb sandwich, definition of the patterns of junctions, base electrodes and wiring by use of reactive ion etching and the planarization of a spin-on glass insulation between base electrode and wiring. A single electr…
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A reliable process has been developed for the fabrication of all-Nb single-electron circuits, based on spin-on glass planarization. The process steps are the in situ growth of Nb/AlOx/Nb sandwich, definition of the patterns of junctions, base electrodes and wiring by use of reactive ion etching and the planarization of a spin-on glass insulation between base electrode and wiring. A single electron transistor made of 0.1 square micrometer area junctions clearly shows the e-periodic Coulomb blockade modulation by a voltage applied to a gate.
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Submitted 17 April, 1998;
originally announced April 1998.
