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Aluminum Oxide at the Monolayer Limit via Oxidant-free Plasma-Assisted Atomic Layer Deposition on GaN
Authors:
Alex Henning,
Johannes D. Bartl,
Andreas Zeidler,
Simon Qian,
Oliver Bienek,
Chang-Ming Jiang,
Claudia Paulus,
Bernhard Rieger,
Martin Stutzmann,
Ian D. Sharp
Abstract:
Atomic layer deposition (ALD) is an essential tool in semiconductor device fabrication that allows the growth of ultrathin and conformal films to precisely form heterostructures and tune interface properties. The self-limiting nature of the chemical reactions during ALD provides excellent control over the layer thickness. However, in contrast to idealized growth models, it is experimentally challe…
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Atomic layer deposition (ALD) is an essential tool in semiconductor device fabrication that allows the growth of ultrathin and conformal films to precisely form heterostructures and tune interface properties. The self-limiting nature of the chemical reactions during ALD provides excellent control over the layer thickness. However, in contrast to idealized growth models, it is experimentally challenging to create continuous monolayers by ALD because surface inhomogeneities and precursor steric interactions result in island growth during film nucleation. Thus, the ability to create pin-hole free monolayers by ALD would offer new opportunities for controlling interfacial charge and mass transport in semiconductor devices, as well as for tailoring surface chemistry. Here, we report full encapsulation of c-plane gallium nitride (GaN) with an ultimately thin (~3 Å) aluminum oxide (AlOx) monolayer, which is enabled by the partial conversion of the GaN surface oxide into AlOx using a combination of trimethylaluminum deposition and hydrogen plasma exposure. Introduction of monolayer AlOx significantly modifies the physical and chemical properties of the surface, decreasing the work function and introducing new chemical reactivity to the GaN surface. This tunable interfacial chemistry is highlighted by the reactivity of the modified surface with phosphonic acids under standard conditions, which results in self-assembled monolayers with densities approaching the theoretical limit. More broadly, the presented monolayer AlOx deposition scheme can be extended to other dielectrics and III-V-based semiconductors, with significant relevance for applications in optoelectronics, chemical sensing, and (photo)electrocatalysis.
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Submitted 6 February, 2021;
originally announced February 2021.
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Deep Image Translation for Enhancing Simulated Ultrasound Images
Authors:
Lin Zhang,
Tiziano Portenier,
Christoph Paulus,
Orcun Goksel
Abstract:
Ultrasound simulation based on ray tracing enables the synthesis of highly realistic images. It can provide an interactive environment for training sonographers as an educational tool. However, due to high computational demand, there is a trade-off between image quality and interactivity, potentially leading to sub-optimal results at interactive rates. In this work we introduce a deep learning app…
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Ultrasound simulation based on ray tracing enables the synthesis of highly realistic images. It can provide an interactive environment for training sonographers as an educational tool. However, due to high computational demand, there is a trade-off between image quality and interactivity, potentially leading to sub-optimal results at interactive rates. In this work we introduce a deep learning approach based on adversarial training that mitigates this trade-off by improving the quality of simulated images with constant computation time. An image-to-image translation framework is utilized to translate low quality images into high quality versions. To incorporate anatomical information potentially lost in low quality images, we additionally provide segmentation maps to image translation. Furthermore, we propose to leverage information from acoustic attenuation maps to better preserve acoustic shadows and directional artifacts, an invaluable feature for ultrasound image interpretation. The proposed method yields an improvement of 7.2% in Fréchet Inception Distance and 8.9% in patch-based Kullback-Leibler divergence.
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Submitted 18 June, 2020;
originally announced June 2020.
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Chemical reactivity imprint lithography on graphene: Controlling the substrate influence on electron transfer reactions
Authors:
Qing Hua Wang,
Zhong **,
Ki Kang Kim,
Andrew J. Hilmer,
Geraldine L. C. Paulus,
Chih-Jen Shih,
Moon-Ho Ham,
Javier D. Sanchez-Yamagishi,
Kenji Watanabe,
Takashi Taniguchi,
**g Kong,
Pablo Jarillo-Herrero,
Michael S. Strano
Abstract:
The chemical functionalization of graphene enables control over electronic properties and sensor recognition sites. However, its study is confounded by an unusually strong influence of the underlying substrate. In this paper, we show a stark difference in the rate of electron transfer chemistry with aryl diazonium salts on monolayer graphene supported on a broad range of substrates. Reactions proc…
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The chemical functionalization of graphene enables control over electronic properties and sensor recognition sites. However, its study is confounded by an unusually strong influence of the underlying substrate. In this paper, we show a stark difference in the rate of electron transfer chemistry with aryl diazonium salts on monolayer graphene supported on a broad range of substrates. Reactions proceed rapidly when graphene is on SiO_2 and Al_2O_3 (sapphire), but negligibly on alkyl-terminated and hexagonal boron nitride (hBN) surfaces. The effect is contrary to expectations based on do** levels and can instead be described using a reactivity model accounting for substrate-induced electron-hole puddles in graphene. Raman spectroscopic map** is used to characterize the effect of the substrates on graphene. Reactivity imprint lithography (RIL) is demonstrated as a technique for spatially patterning chemical groups on graphene by patterning the underlying substrate, and is applied to the covalent tethering of proteins on graphene.
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Submitted 13 July, 2012;
originally announced July 2012.
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CMOS-Based Biosensor Arrays
Authors:
R. Thewes,
C. Paulus,
M. Schienle,
F. Hofmann,
A. Frey,
R. Brederlow,
M. Augustyniak,
M. Jenkner,
B. Eversmann,
P. Schindler-Bauer,
M. Atzesberger,
B. Holzapfl,
G. Beer,
T. Haneder,
H. -C. Hanke
Abstract:
CMOS-based sensor array chips provide new and attractive features as compared to today's standard tools for medical, diagnostic, and biotechnical applications. Examples for molecule- and cell-based approaches and related circuit design issues are discussed.
CMOS-based sensor array chips provide new and attractive features as compared to today's standard tools for medical, diagnostic, and biotechnical applications. Examples for molecule- and cell-based approaches and related circuit design issues are discussed.
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Submitted 25 October, 2007;
originally announced October 2007.
