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PromptSet: A Programmer's Prompting Dataset
Authors:
Kaiser Pister,
Dhruba Jyoti Paul,
Patrick Brophy,
Ishan Joshi
Abstract:
The rise of capabilities expressed by large language models has been quickly followed by the integration of the same complex systems into application level logic. Algorithms, programs, systems, and companies are built around structured prompting to black box models where the majority of the design and implementation lies in capturing and quantifying the `agent mode'. The standard way to shape a cl…
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The rise of capabilities expressed by large language models has been quickly followed by the integration of the same complex systems into application level logic. Algorithms, programs, systems, and companies are built around structured prompting to black box models where the majority of the design and implementation lies in capturing and quantifying the `agent mode'. The standard way to shape a closed language model is to prime it for a specific task with a tailored prompt, often initially handwritten by a human. The textual prompts co-evolve with the codebase, taking shape over the course of project life as artifacts which must be reviewed and maintained, just as the traditional code files might be. Unlike traditional code, we find that prompts do not receive effective static testing and linting to prevent runtime issues. In this work, we present a novel dataset called PromptSet, with more than 61,000 unique developer prompts used in open source Python programs. We perform analysis on this dataset and introduce the notion of a static linter for prompts. Released with this publication is a HuggingFace dataset and a Github repository to recreate collection and processing efforts, both under the name \texttt{pisterlabs/promptset}.
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Submitted 26 February, 2024;
originally announced February 2024.
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A tuneable wavelength reference for chip-scale laser cooling
Authors:
S. Dyer,
K. Gallacher,
U. Hawley,
A. Bregazzi,
P. F. Griffin,
A. S. Arnold,
D. J. Paul,
E. Riis,
J. P. McGilligan
Abstract:
We demonstrate a tuneable, chip-scale wavelength reference to greatly reduce the complexity and volume of cold-atom sensors. A 1 mm optical path length micro-fabricated cell provides an atomic wavelength reference, with dynamic frequency control enabled by Zeeman shifting the atomic transition through the magnetic field generated by the printed circuit board (PCB) coils. The dynamic range of the l…
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We demonstrate a tuneable, chip-scale wavelength reference to greatly reduce the complexity and volume of cold-atom sensors. A 1 mm optical path length micro-fabricated cell provides an atomic wavelength reference, with dynamic frequency control enabled by Zeeman shifting the atomic transition through the magnetic field generated by the printed circuit board (PCB) coils. The dynamic range of the laser frequency stabilization system is evaluated and used in conjunction with an improved generation of chip-scale cold atom platforms that traps 4 million 87Rb atoms. The scalability and component consolidation provide a key step forward in the miniaturization of cold atom sensors.
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Submitted 6 December, 2022;
originally announced December 2022.
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Invited Review: Micro-fabricated components for cold atom sensors
Authors:
J. P. McGilligan,
K. Gallacher,
P. F. Griffin,
D. J. Paul,
A. S. Arnold,
E. Riis
Abstract:
Laser cooled atoms have proven transformative for precision metrology, playing a pivotal role in state-of-the-art clocks and interferometers, and having the potential to provide a step-change in our modern technological capabilities. To successfully explore their full potential, laser cooling platforms must be translated from the laboratory environment and into portable, compact quantum sensors fo…
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Laser cooled atoms have proven transformative for precision metrology, playing a pivotal role in state-of-the-art clocks and interferometers, and having the potential to provide a step-change in our modern technological capabilities. To successfully explore their full potential, laser cooling platforms must be translated from the laboratory environment and into portable, compact quantum sensors for deployment in practical applications. This transition requires the amalgamation of a wide range of components and expertise if an unambiguously chip-scale cold atom sensor is to be realized. We present recent developments in cold-atom sensor miniaturization, focusing on key components that enable laser cooling on the chip-scale. The design, fabrication and impact of the components on sensor scalability and performance will be discussed with an outlook to the next generation of chip-scale cold atom devices.
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Submitted 1 August, 2022;
originally announced August 2022.
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A Nineteen Day Earth Tide Measurement with a MEMS Gravimeter
Authors:
A. Prasad,
R. P. Middlemiss,
K. Anastasiou,
S. G. Bramsiepe,
A. Noack,
D. J. Paul,
K. Toland,
P. R. Utting,
G. D. Hammond
Abstract:
The measurement of tiny variations in local gravity enables the observation of subterranean features. Gravimeters have historically been extremely expensive instruments, but usable gravity measurements have recently been conducted using MEMS (microelectromechanical systems) sensors. Such sensors are cheap to produce, since they rely on the same fabrication techniques used to produce mobile phone a…
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The measurement of tiny variations in local gravity enables the observation of subterranean features. Gravimeters have historically been extremely expensive instruments, but usable gravity measurements have recently been conducted using MEMS (microelectromechanical systems) sensors. Such sensors are cheap to produce, since they rely on the same fabrication techniques used to produce mobile phone accelerometers. A significant challenge in the development of MEMS gravimeters is maintaining stability over long time periods, which is essential for long term monitoring applications. A standard way to demonstrate gravimeter stability and sensitivity is to measure the periodic elastic distortion of the Earth due to tidal forces - the Earth tides. Here we present a nineteen day measurement of the Earth tides, with a correlation coefficient to the theoretical signal of 0.979. The estimated bias instability of the proposed gravimeter is 8.18 microGal for an averaging time of ~400 s when considering the raw, uncompensated data. The bias instability extracted from the sensor electronic noise sits just under 2 mircoGal for an averaging time of ~200 s. After removing the long-term temperature and control electronics effects from the raw data, a linear drift of 268 microGal/day is observed in the data, which is among one of the best reported for a MEMS device. These results demonstrate that this MEMS gravimeter is capable of conducting long-therm time-lapse gravimetry, a functionality essential for applications such as volcanology.
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Submitted 28 September, 2021;
originally announced September 2021.
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A MEMS gravimeter with multi-axis gravitational sensitivity
Authors:
Richard P. Middlemiss,
Paul Campsie,
William Cunningham,
Rebecca Douglas,
Victoria McIvor,
James Hough,
Sheila Rowan,
Douglas J. Paul,
Abhinav Prasad,
G. D. Hammond
Abstract:
A single-axis Microelectromechanical system gravimeter has recently been developed at the University of Glasgow. The sensitivity and stability of this device was demonstrated by measuring the Earth tides. The success of this device was enabled in part by its extremely low resonant frequency. This low frequency was achieved with a geometric anti-spring design, fabricated using well-established phot…
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A single-axis Microelectromechanical system gravimeter has recently been developed at the University of Glasgow. The sensitivity and stability of this device was demonstrated by measuring the Earth tides. The success of this device was enabled in part by its extremely low resonant frequency. This low frequency was achieved with a geometric anti-spring design, fabricated using well-established photolithography and dry etch techniques. Analytical models can be used to calculate the results of these non-linear oscillating systems, but the power of finite element analysis has not been fully utilised to explore the parameter space before now. In this article, the results of previous analytical solutions are replicated using finite element models, before applying the same techniques to optimise the design of the gravimeter. These computer models provide the ability to investigate the effect of the fabrication material of the device: anisotropic <100> crystalline silicon. This is a parameter that is difficult to investigate analytically, but finite element modelling is demonstrated here to provide accurate predictions of real gravimeter behaviour by taking anisotropy into account. The finite element models are then used to demonstrate the design of a three-axis gravimeter enabling the gravity tensor to be measured - a significantly more powerful surveying tool than the original single-axis device.
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Submitted 10 February, 2021;
originally announced February 2021.
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THz intersubband electroluminescence from n-type Ge/SiGe quantum cascade structures
Authors:
David Stark,
Muhammad Mirza,
Luca Persichetti,
Michele Montanari,
Sergej Markmann,
Mattias Beck,
Thomas Grange,
Stefan Birner,
Michele Virgilio,
Chiara Ciano,
Michele Ortolani,
Cedric Corley,
Giovanni Capellini,
Luciana Di Gaspare,
Monica De Seta,
Douglas J. Paul,
Jérôme Faist,
Giacomo Scalari
Abstract:
We report electroluminescence originating from L-valley transitions in n-type Ge/Si$_{0.15}$Ge$_{0.85}$ quantum cascade structures centered at 3.4 and 4.9 THz with a line broadening of $Δf/f \approx 0.2$. Three strain-compensated heterostructures, grown on a Si substrate by ultrahigh vacuum chemical vapor deposition, have been investigated. The design is based on a single quantum well active regio…
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We report electroluminescence originating from L-valley transitions in n-type Ge/Si$_{0.15}$Ge$_{0.85}$ quantum cascade structures centered at 3.4 and 4.9 THz with a line broadening of $Δf/f \approx 0.2$. Three strain-compensated heterostructures, grown on a Si substrate by ultrahigh vacuum chemical vapor deposition, have been investigated. The design is based on a single quantum well active region employing a vertical optical transition and the observed spectral features are well described by non-equilibrium Green's function calculations. The presence of two peaks highlights a suboptimal injection in the upper state of the radiative transition. Comparison of the electroluminescence spectra with similar GaAs/AlGaAs structure yields one order of magnitude lower emission efficiency.
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Submitted 14 January, 2021;
originally announced January 2021.
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Strain analysis of Ge micro disk using precession electron diffraction
Authors:
Aneeqa Bashir,
Ross. W. Millar,
Kevin Gallacher,
Douglas. J. Paul,
Amith. D. Darbal,
Robert Stroud,
Andrea Ballabio,
Jacopo Frigerio,
Giovanni Isella,
Ian MacLaren
Abstract:
The recently developed precession electron diffraction (PED) technique in scanning transmission electron microscopy (STEM) has been used to elucidate the local strain distribution and crystalline misorientation in CMOS fabricated strained Ge micro disk structure grown on Si substrate. Such structures are considered to be a compact optical source for the future photonics due to the specific undercu…
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The recently developed precession electron diffraction (PED) technique in scanning transmission electron microscopy (STEM) has been used to elucidate the local strain distribution and crystalline misorientation in CMOS fabricated strained Ge micro disk structure grown on Si substrate. Such structures are considered to be a compact optical source for the future photonics due to the specific undercut for direct bandgap behaviour under strain. In this study, the strain maps are interpreted and compared with a finite element model (FEM) of the strain in the investigated structure. Results demonstrate that the SiN used as a stressor on top of the Ge disk induces an in-plane strain $ε_{xx}$ of a maximum value of almost 2 % which is also confirmed by FEM simulations. This tensile strain can reduce the difference between the direct and indirect bandgaps leading to direct bandgap radiative transitions, with the potential for applications in strained Ge lasers.
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Submitted 6 June, 2019;
originally announced June 2019.
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Room temperature operation of n-type Ge/SiGe terahertz quantum cascade lasers predicted by non-equilibrium Green's functions
Authors:
T. Grange,
D. Stark,
G. Scalari,
J. Faist,
L. Persichetti,
L. Di Gaspare,
M. De Seta,
M. Ortolani,
D. J. Paul,
G. Capellini,
S. Birner,
M. Virgilio
Abstract:
n-type Ge/SiGe terahertz quantum cascade laser are investigated using non-equilibrium Green's functions calculations. We compare the temperature dependence of the terahertz gain properties with an equivalent GaAs/AlGaAs QCL design. In the Ge/SiGe case, the gain is found to be much more robust to temperature increase, enabling operation up to room temperature. The better temperature robustness with…
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n-type Ge/SiGe terahertz quantum cascade laser are investigated using non-equilibrium Green's functions calculations. We compare the temperature dependence of the terahertz gain properties with an equivalent GaAs/AlGaAs QCL design. In the Ge/SiGe case, the gain is found to be much more robust to temperature increase, enabling operation up to room temperature. The better temperature robustness with respect to III-V is attributed to the much weaker interaction with optical phonons. The effect of lower interface quality is investigated and can be partly overcome by engineering smoother quantum confinement via multiple barrier heights.
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Submitted 30 November, 2018;
originally announced November 2018.
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Quantum Interference in Silicon 1D Quasi-Ballistic Junctionless Nanowire Field Effect Transistors
Authors:
Felix J. Schupp,
Muhammad M. Mirza,
Donald A. MacLaren,
G. Andrew D. Briggs,
Douglas J. Paul,
Jan A. Mol
Abstract:
We investigate the low temperature transport in 8 nm diameter Si junctionless nanowire field effect transistors fabricated by top down techniques with a wrap-around gate and two different activated do** densities. First we extract the intrinsic gate capacitance of the device geometry from a device that shows Coulomb blockade at 13 mK with over 500 Coulomb peaks across a gate voltage range of 6 V…
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We investigate the low temperature transport in 8 nm diameter Si junctionless nanowire field effect transistors fabricated by top down techniques with a wrap-around gate and two different activated do** densities. First we extract the intrinsic gate capacitance of the device geometry from a device that shows Coulomb blockade at 13 mK with over 500 Coulomb peaks across a gate voltage range of 6 V indicating the formation of a single island in the entire nanowire channel. In two other devices, doped Si:P $4\times10^{19}\,\text{cm}^{-3}$ and $2\times10^{20}\,\text{cm}^{-3}$, we observe quantum interference and use the extracted gate coupling to determine the dominant energy scale and the corresponding mean-free paths. For the higher doped device the analysis yields a mean free path of $4\pm2\,\text{nm}$, which is on the order of the average dopant spacing and suggests scattering on unactivated or activated dopants. For the device with an activated dopant density of $4\times10^{19}\,\text{cm}^{-3}$ the quantum interference effects suggest a mean free path of $10\pm2\,\text{nm}$, which is comparable to the nanowire width, and thus quasi-ballistic transport. A temperature dependent analysis of Universal Conductance Fluctuations suggests a coherence length above the nanowire length for temperatures below 1.9 K and decoherence from 1D electron-electron interactions for higher temperatures. The mobility is limited by scattering on impurities rather than the expected surface roughness scattering for nanowires with diameters larger or comparable to the Fermi wavelength. Our measurements therefore provide insight into the performance limitations from dominant scattering and dephasing mechanisms in technologically relevant silicon device geometries.
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Submitted 20 February, 2018;
originally announced February 2018.
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Mid Infrared Nonlinear Plasmonics using Germanium Nanoantennas on Silicon Substrates
Authors:
Marco P. Fischer,
Aaron Riede,
Kevin Gallacher,
Jacopo Frigerio,
Giovanni Pellegrini,
Michele Ortolani,
Douglas J. Paul,
Giovanni Isella,
Alfred Leitenstorfer,
Paolo Biagioni,
Daniele Brida
Abstract:
We demonstrate third harmonic generation in plasmonic antennas made of highly doped germanium and designed to be resonant in the mid infrared. Owing to the near-field enhancement, the result is an ultrafast, sub-diffraction, coherent light source tunable between 3 and 5 micrometer wavelength on a silicon substrate. To observe nonlinearity in this challenging spectral region, a high-power femtoseco…
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We demonstrate third harmonic generation in plasmonic antennas made of highly doped germanium and designed to be resonant in the mid infrared. Owing to the near-field enhancement, the result is an ultrafast, sub-diffraction, coherent light source tunable between 3 and 5 micrometer wavelength on a silicon substrate. To observe nonlinearity in this challenging spectral region, a high-power femtosecond laser system equipped with parametric frequency conversion in combination with an all-reflective confocal microscope setup is employed. We show spatially resolved maps of the linear scattering cross section and the nonlinear emission of single isolated antenna structures. A clear third order power dependence as well as the mid-infrared emission spectra prove the nonlinear nature of the light emission. Simulations support the observed resonance length of the double rod antenna and demonstrate that the field enhancement inside the antenna material is responsible for the nonlinear frequency mixing.
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Submitted 12 February, 2018;
originally announced February 2018.
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A High Stability Optical Shadow Sensor with Applications for Precision Accelerometers
Authors:
Steven G Bramsiepe,
David Loomes,
Richard P Middlemiss,
Douglas J Paul,
Giles D Hammond
Abstract:
Gravimeters are devices which measure changes in the value of the gravitational acceleration, \textit{g}. This information is used to infer changes in density under the ground allowing the detection of subsurface voids; mineral, oil and gas reserves; and even the detection of the precursors of volcanic eruptions. A micro-electro mechanical system (MEMS) gravimeter has been fabricated completely in…
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Gravimeters are devices which measure changes in the value of the gravitational acceleration, \textit{g}. This information is used to infer changes in density under the ground allowing the detection of subsurface voids; mineral, oil and gas reserves; and even the detection of the precursors of volcanic eruptions. A micro-electro mechanical system (MEMS) gravimeter has been fabricated completely in silicon allowing the possibility of cost e-effective, lightweight and small gravimeters. To obtain a measurement of gravity, a highly stable displacement measurement of the MEMS is required. This requires the development of a portable electronics system that has a displacement sensitivity of $\leq 2.5$ nm over a period of a day or more. The portable electronics system presented here has a displacement sensitivity $\leq 10$ nm$/\sqrt{\textrm{Hz}}$ ($\leq 0.6$ nm at $1000$ s). The battery power system used a modulated LED for measurements and required temperature control of the system to $\pm$ 2 mK, monitoring of the tilt to $\pm$ 2 $μ$radians, the storage of measured data and the transmission of the data to an external server.
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Submitted 3 November, 2017;
originally announced November 2017.
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Disentangling nonradiative recombination processes in Ge micro-crystals on Si substrates
Authors:
F. Pezzoli,
A. Giorgioni,
K. Gallacher,
F. Isa,
P. Biagioni,
R. W. Millar,
E. Gatti,
E. Grilli,
E. Bonera,
G. Isella,
D. J. Paul,
Leo Miglio
Abstract:
We address nonradiative recombination pathways by leveraging surface passivation and dislocation management in micron-scale arrays of Ge crystals grown on deeply patterned Si substrates. The time decay photoluminescence (PL) at cryogenic temperatures discloses carrier lifetimes approaching 45 ns in band-gap engineered Ge micro-crystals. This investigation provides compelling information about the…
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We address nonradiative recombination pathways by leveraging surface passivation and dislocation management in micron-scale arrays of Ge crystals grown on deeply patterned Si substrates. The time decay photoluminescence (PL) at cryogenic temperatures discloses carrier lifetimes approaching 45 ns in band-gap engineered Ge micro-crystals. This investigation provides compelling information about the competitive interplay between the radiative band-edge transitions and the trap** of carriers by dislocations and free surfaces. Furthermore, an in-depth analysis of the temperature dependence of the PL, combined with capacitance data and finite difference time domain modeling, demonstrates the effectiveness of GeO2 in passivating the surface of Ge and thus in enhancing the room temperature PL emission.
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Submitted 29 March, 2016;
originally announced March 2016.
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Optical Activation of Germanium Plasmonic Antennas in the Mid Infrared
Authors:
Marco P. Fischer,
Christian Schmidt,
Emilie Sakat,
Johannes Stock,
Antonio Samarelli,
Jacopo Frigerio,
Michele Ortolani,
Douglas J. Paul,
Giovanni Isella,
Alfred Leitenstorfer,
Paolo Biagioni,
Daniele Brida
Abstract:
Impulsive interband excitation with femtosecond near-infrared pulses establishes a plasma response in intrinsic germanium structures fabricated on a silicon substrate. This direct approach activates the plasmonic resonance of the Ge structures and enables their use as optical antennas up to the mid-infrared spectral range. The optical switching lasts for hundreds of picoseconds until charge recomb…
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Impulsive interband excitation with femtosecond near-infrared pulses establishes a plasma response in intrinsic germanium structures fabricated on a silicon substrate. This direct approach activates the plasmonic resonance of the Ge structures and enables their use as optical antennas up to the mid-infrared spectral range. The optical switching lasts for hundreds of picoseconds until charge recombination red-shifts the plasma frequency. The full behavior of the structures is modeled by the electrodynamic response established by an electron-hole plasma in a regular array of antennas.
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Submitted 10 June, 2016; v1 submitted 21 March, 2016;
originally announced March 2016.
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Tunability and Losses of Mid-infrared Plasmonics in Heavily Doped Germanium Thin Films
Authors:
Jacopo Frigerio,
Andrea Ballabio,
Giovanni Isella,
Emilie Sakat,
Paolo Biagioni,
Monica Bollani,
Enrico Napolitani,
Costanza Manganelli,
Michele Virgilio,
Alexander Grupp,
Marco P. Fischer,
Daniele Brida,
Kevin Gallacher,
Douglas J. Paul,
Leonetta Baldassarre,
Paolo Calvani,
Valeria Giliberti,
Alessandro Nucara,
Michele Ortolani
Abstract:
Heavily-doped semiconductor films are very promising for application in mid-infrared plasmonic devices because the real part of their dielectric function is negative and broadly tunable in this wavelength range. In this work we investigate heavily n-type doped germanium epilayers grown on different substrates, in-situ doped in the $10^{17}$ to $10^{19}$ cm$^{-3}$ range, by infrared spectroscopy, f…
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Heavily-doped semiconductor films are very promising for application in mid-infrared plasmonic devices because the real part of their dielectric function is negative and broadly tunable in this wavelength range. In this work we investigate heavily n-type doped germanium epilayers grown on different substrates, in-situ doped in the $10^{17}$ to $10^{19}$ cm$^{-3}$ range, by infrared spectroscopy, first principle calculations, pump-probe spectroscopy and dc transport measurements to determine the relation between plasma edge and carrier density and to quantify mid-infrared plasmon losses. We demonstrate that the unscreened plasma frequency can be tuned in the 400 - 4800 cm$^{-1}$ range and that the average electron scattering rate, dominated by scattering with optical phonons and charged impurities, increases almost linearly with frequency. We also found weak dependence of losses and tunability on the crystal defect density, on the inactivated dopant density and on the temperature down to 10 K. In films where the plasma was optically activated by pum** in the near-infrared, we found weak but significant dependence of relaxation times on the static do** level of the film. Our results suggest that plasmon decay times in the several-picosecond range can be obtained in n-type germanium thin films grown on silicon substrates hence allowing for underdamped mid-infrared plasma oscillations at room temperature.
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Submitted 20 January, 2016;
originally announced January 2016.
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Mid-Infrared Plasmonic Platform based on Heavily Doped Epitaxial Ge-on-Si: Retrieving the Optical Constants of Thin Ge Epilayers
Authors:
Leonetta Baldassarre,
Eugenio Calandrini,
Antonio Samarelli,
Kevin Gallacher,
Douglas J. Paul,
Jacopo Frigerio,
Giovanni Isella,
Emilie Sakat,
Marco Finazzi,
Paolo Biagioni,
Michele Ortolani
Abstract:
The n-type Ge-on-Si epitaxial material platform enables a novel paradigm for plasmonics in the mid-infrared, prompting the future development of lab-on-a-chip and subwavelength vibrational spectroscopic sensors. In order to exploit this material, through proper electrodynamic design, it is mandatory to retrieve the dielectric constants of the thin Ge epilayers with high precision due to the differ…
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The n-type Ge-on-Si epitaxial material platform enables a novel paradigm for plasmonics in the mid-infrared, prompting the future development of lab-on-a-chip and subwavelength vibrational spectroscopic sensors. In order to exploit this material, through proper electrodynamic design, it is mandatory to retrieve the dielectric constants of the thin Ge epilayers with high precision due to the difference from bulk Ge crystals. Here we discuss the procedure we have employed to extract the real and imaginary part of the dielectric constants from normal incidence reflectance measurements, by combining the standard multilayer fitting procedure based on the Drude model with Kramers-Kronig transformations of absolute reflectance data in the zero-transmission range of the thin film.
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Submitted 20 February, 2015;
originally announced February 2015.
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Silicon as a model ion trap: time domain measurements of donor Rydberg states
Authors:
N Q Vinh,
P T Greenland,
K Litvinenko,
B Redlich,
A F G van der Meer,
S A Lynch,
M Warner,
A M Stoneham,
G Aeppli,
D J Paul,
C R Pidgeon,
B N Murdin
Abstract:
One of the great successes of quantum physics is the description of the long-lived Rydberg states of atoms and ions. The Bohr model is equally applicable to donor impurity atoms in semiconductor physics, where the conduction band corresponds to the vacuum, and the loosely bound electron orbiting a singly charged core has a hydrogen-like spectrum according to the usual Bohr-Sommerfeld formula, sh…
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One of the great successes of quantum physics is the description of the long-lived Rydberg states of atoms and ions. The Bohr model is equally applicable to donor impurity atoms in semiconductor physics, where the conduction band corresponds to the vacuum, and the loosely bound electron orbiting a singly charged core has a hydrogen-like spectrum according to the usual Bohr-Sommerfeld formula, shifted to the far-infrared due to the small effective mass and high dielectric constant. Manipulation of Rydberg states in free atoms and ions by single and multi-photon processes has been tremendously productive since the development of pulsed visible laser spectroscopy. The analogous manipulations have not been conducted for donor impurities in silicon. Here we use the FELIX pulsed free electron laser to perform time-domain measurements of the Rydberg state dynamics in phosphorus- and arsenic-doped silicon and we have obtained lifetimes consistent with frequency domain linewidths for isotopically purified silicon. This implies that the dominant decoherence mechanism for excited Rydberg states is lifetime broadening, just as for atoms in ion traps. The experiments are important because they represent the first step towards coherent control and manipulation of atomic-like quantum levels in the most common semiconductor and complement magnetic resonance experiments in the literature, which show extraordinarily long spin lattice relaxation times key to many well-known schemes for quantum computing qubits for the same impurities. Our results, taken together with the magnetic resonance data and progress in precise placement of single impurities, suggest that doped silicon, the basis for modern microelectronics, is also a model ion trap.
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Submitted 30 November, 2008;
originally announced December 2008.
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Variation of the hop** exponent in disordered silicon MOSFETs
Authors:
T. Ferrus,
R. George,
C. H. W. Barnes,
N. Lumpkin,
D. J. Paul,
M. Pepper
Abstract:
We observe a complex change in the hop** exponent value from 1/2 to 1/3 as a function of disorder strength and electron density in a sodium-doped silicon MOSFET. The disorder was varied by applying a gate voltage and thermally drifting the ions to different positions in the oxide. The same gate was then used at low temperature to modify the carrier concentration. Magnetoconductivity measuremen…
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We observe a complex change in the hop** exponent value from 1/2 to 1/3 as a function of disorder strength and electron density in a sodium-doped silicon MOSFET. The disorder was varied by applying a gate voltage and thermally drifting the ions to different positions in the oxide. The same gate was then used at low temperature to modify the carrier concentration. Magnetoconductivity measurements are compatible with a change in transport mechanisms when either the disorder or the electron density is modified suggesting a possible transition from a Mott insulator to an Anderson insulator in these systems.
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Submitted 26 September, 2008; v1 submitted 29 May, 2007;
originally announced May 2007.
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Magnetoconductivity of Hubbard bands induced in Silicon MOSFETs
Authors:
T. Ferrus,
R. George,
C. H. W. Barnes,
N. Lumpkin,
D. J. Paul,
M. Pepper
Abstract:
Sodium impurities are diffused electrically to the oxide-semiconductor interface of a silicon MOSFET to create an impurity band. At low temperature and at low electron density, the band is split into an upper and a lower sections under the influence of Coulomb interactions. We used magnetoconductivity measurements to provide evidence for the existence of Hubbard bands and determine the nature of…
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Sodium impurities are diffused electrically to the oxide-semiconductor interface of a silicon MOSFET to create an impurity band. At low temperature and at low electron density, the band is split into an upper and a lower sections under the influence of Coulomb interactions. We used magnetoconductivity measurements to provide evidence for the existence of Hubbard bands and determine the nature of the states in each band.
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Submitted 11 October, 2007; v1 submitted 6 December, 2005;
originally announced December 2005.
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Activation mechanisms in sodium-doped Silicon MOSFETs
Authors:
T. Ferrus,
R. George,
C. H. W. Barnes,
N. Lumpkin,
D. J. Paul,
M. Pepper
Abstract:
We have studied the temperature dependence of the conductivity of a silicon MOSFET containing sodium ions in the oxide above 20 K. We find the impurity band resulting from the presence of charges at the silicon-oxide interface is split into a lower and an upper band. We have observed activation of electrons from the upper band to the conduction band edge as well as from the lower to the upper ba…
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We have studied the temperature dependence of the conductivity of a silicon MOSFET containing sodium ions in the oxide above 20 K. We find the impurity band resulting from the presence of charges at the silicon-oxide interface is split into a lower and an upper band. We have observed activation of electrons from the upper band to the conduction band edge as well as from the lower to the upper band. A possible explanation implying the presence of Hubbard bands is given.
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Submitted 16 May, 2007; v1 submitted 2 December, 2005;
originally announced December 2005.
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Evidence for multiple impurity bands in sodium-doped silicon MOSFETs
Authors:
T. Ferrus,
R. George,
C. H. W. Barnes,
N. Lumpkin,
D. J. Paul,
M. Pepper
Abstract:
We report measurements of the temperature-dependent conductivity in a silicon metal-oxide-semiconductor field-effect transistor that contains sodium impurities in the oxide layer. We explain the variation of conductivity in terms of Coulomb interactions that are partially screened by the proximity of the metal gate. The study of the conductivity exponential prefactor and the localization length…
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We report measurements of the temperature-dependent conductivity in a silicon metal-oxide-semiconductor field-effect transistor that contains sodium impurities in the oxide layer. We explain the variation of conductivity in terms of Coulomb interactions that are partially screened by the proximity of the metal gate. The study of the conductivity exponential prefactor and the localization length as a function of gate voltage have allowed us to determine the electronic density of states and has provided arguments for the presence of two distinct bands and a soft gap at low temperature.
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Submitted 13 April, 2006; v1 submitted 6 October, 2005;
originally announced October 2005.
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Transverse "resistance overshoot" in a Si/SiGe two-dimensional electron gas in the quantum Hall effect regime
Authors:
I. Shlimak,
V. Ginodman,
A. B. Gerber,
A. Milner,
K. -J. Friedland,
D. J. Paul
Abstract:
We investigate the peculiarities of the "overshoot" phenomena in the transverse Hall resistance R_{xy} in Si/SiGe. Near the low magnetic field end of the quantum Hall effect plateaus, when the filling factor νapproaches an integer i, R_{xy} overshoots the normal plateau value h/ie^2. However, if magnetic field B increases further, R_{xy} decreases to its normal value. It is shown that in the inv…
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We investigate the peculiarities of the "overshoot" phenomena in the transverse Hall resistance R_{xy} in Si/SiGe. Near the low magnetic field end of the quantum Hall effect plateaus, when the filling factor νapproaches an integer i, R_{xy} overshoots the normal plateau value h/ie^2. However, if magnetic field B increases further, R_{xy} decreases to its normal value. It is shown that in the investigated sample n-Si/Si_{0.7}Ge_{0.3}, overshoots exist for almost all ν. Existence of overshoot in R_{xy} observed in different materials and for different ν, where splitting of the adjacent Landau bands has different character, hints at the common origin of this effect. Comparison of the experimental curves R_{xy}(ν) for ν= 3 and ν= 5 with and without overshoot showed that this effect exist in the whole interval between plateaus, not only in the region where R_{xy} exceeds the normal plateau value.
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Submitted 3 February, 2005;
originally announced February 2005.
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Longitudinal conductivity in Si/SiGe heterostructure at integer filling factors
Authors:
I. Shlimak,
V. Ginodman,
M. Levin,
M. Potemski,
D. K. Maude,
K. -J. Friedland,
D. J. Paul
Abstract:
We have investigated temperature dependence of the longitudinal conductivity $σ_{xx}$ at integer filling factors $ν=i$ for Si/SiGe heterostructure in the quantum Hall effect regime. It is shown that for odd $i$, when the Fermi level $E_{F}$ is situated between the valley-split levels, $Δσ_{xx}$ is determined by quantum corrections to conductivity caused by the electron-electron interaction:…
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We have investigated temperature dependence of the longitudinal conductivity $σ_{xx}$ at integer filling factors $ν=i$ for Si/SiGe heterostructure in the quantum Hall effect regime. It is shown that for odd $i$, when the Fermi level $E_{F}$ is situated between the valley-split levels, $Δσ_{xx}$ is determined by quantum corrections to conductivity caused by the electron-electron interaction: $Δσ_{xx}(T)\sim \ln T$. For even $i$, when $E_{F}$ is located between cyclotron-split levels or spin-split levels, $σ_{xx}\sim \exp[-Δ_{i}/T]$ for $i=6,10,12$ and $\sim \exp [-(T_{0i}/T)]^{1/2}$ for $i=4,8$. For further decrease of $T$, all dependences $σ_{xx}(T)$ tend to almost temperature-independent residual conductivity $σ_{i}(0)$. A possible mechanism for $σ_{i}(0)$ is discussed.
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Submitted 29 July, 2003;
originally announced July 2003.
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The relative importance of electron-electron interactions compared to disorder in the two-dimensional "metallic" state
Authors:
A. Lewalle,
M. Pepper,
C. J. B. Ford,
E. H. Hwang,
S. Das Sarma,
D. J. Paul,
G. Redmond
Abstract:
The effect of substrate bias and surface gate voltage on the low temperature resistivity of a Si-MOSFET is studied for electron concentrations where the resistivity increases with increasing temperature. This technique offers two degrees of freedom for controlling the electron concentration and the device mobility, thereby providing a means to evaluate the relative importance of electron-electro…
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The effect of substrate bias and surface gate voltage on the low temperature resistivity of a Si-MOSFET is studied for electron concentrations where the resistivity increases with increasing temperature. This technique offers two degrees of freedom for controlling the electron concentration and the device mobility, thereby providing a means to evaluate the relative importance of electron-electron interactions and disorder in this so-called ``metallic'' regime. For temperatures well below the Fermi temperature, the data obey a scaling law where the disorder parameter ($k_{\rm{F}}l$), and not the concentration, appears explicitly. This suggests that interactions, although present, do not alter the Fermi-liquid properties of the system fundamentally. Furthermore, this experimental observation is reproduced in results of calculations based on temperature-dependent screening, in the context of Drude-Boltzmann theory.
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Submitted 15 August, 2001;
originally announced August 2001.
