Ultrafast opto-mechanical terahertz modulators based on stretchable carbon nanotube thin films
Authors:
Maksim I. Paukov,
Vladimir V. Starchenko,
Dmitry V. Krasnikov,
Gennady A. Komandin,
Yuriy G. Gladush,
Sergey S. Zhukov,
Boris P. Gorshunov,
Albert G. Nasibulin,
Aleksey V. Arsenin,
Valentyn S. Volkov,
Maria G. Burdanova
Abstract:
For terahertz (THz) wave applications, tunable and rapid modulation is highly required. When studied by means of optical pump-terahertz probe spectroscopy, single-walled carbon nanotubes (SWCNTs) thin films demonstrated ultrafast carrier recombination lifetimes with a high relative change in the signal under optical excitation, making them promising candidates for high-speed modulators. Here, comb…
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For terahertz (THz) wave applications, tunable and rapid modulation is highly required. When studied by means of optical pump-terahertz probe spectroscopy, single-walled carbon nanotubes (SWCNTs) thin films demonstrated ultrafast carrier recombination lifetimes with a high relative change in the signal under optical excitation, making them promising candidates for high-speed modulators. Here, combination of SWCNTthin films and stretchable substrates facilitated studies of the SWCNT mechanical properties under strain,and enabled the development of a new type of an opto-mechanical modulator. By applying a certain strain to the SWCNT films, the effective sheet conductance and therefore modulation depth can be fine-tuned to optimize the designed modulator. Modulators exhibited a photoconductivity change of 3-4 orders of magnitude under the strain due to the structural modification in the SWCNT network. Stretching was used to control the THz signal with a modulation depth of around 100 % without strain and 65 % at a high strainoperation of 40 %. The sensitivity of modulators to beam polarisation is also shown, which might also come in handy for the design of a stretchable polariser. Our results give a fundamental grounding for the design of high-sensitivity stretchable devices based on SWCNT films.
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Submitted 14 November, 2022;
originally announced November 2022.
Synthesis and physical properties of uranium thin-film hydrides UH2 and \b{eta}-UH3
Authors:
Evgenia A. Tereshina-Chitrova,
Ladislav Havela,
Mykhaylo Paukov,
Oleksandra Koloskova,
Lukas Horak,
Milan Dopita,
Mayerling Martinez Celis,
Miroslav Cieslar,
Zbynek Soban,
Thomas Gouder,
Frank Huber
Abstract:
Formation of thin uranium hydrides films, UH2 and \b{eta}-UH3, synthesized by a reactive dc sputtering of uranium metal, was explored using variable deposition conditions. Obtained stable oxygen-free hydride films were studied by a variety of methods, both in situ (photoelectron spectroscopy - XPS), and ex-situ (x-ray diffraction - XRD, transmission electron microscopy - TEM), electrical resistivi…
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Formation of thin uranium hydrides films, UH2 and \b{eta}-UH3, synthesized by a reactive dc sputtering of uranium metal, was explored using variable deposition conditions. Obtained stable oxygen-free hydride films were studied by a variety of methods, both in situ (photoelectron spectroscopy - XPS), and ex-situ (x-ray diffraction - XRD, transmission electron microscopy - TEM), electrical resistivity, and magnetometry). Both types of hydrides are ferromagnetic, the Curie temperatures of UH2 and \b{eta}-UH3 are approx. 120 and 170 K, respectively. Ferromagnetism in the thin films is robust and does not depend on structure details while electrical resistivity data reflect disorder in both types of hydrides.
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Submitted 11 November, 2022;
originally announced November 2022.
