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Probing the inverse moment of $B_s$-meson distribution amplitude via $B_s \to η_s$ form factors
Authors:
Rusa Mandal,
Praveen S Patil,
Ipsita Ray
Abstract:
We investigate the inverse moment of the $B_s$-meson light-cone distribution amplitude (LCDA), denoted as $λ_{B_s}$ and defined within the heavy quark effective theory, through the calculation of $B_s \to η_s$ form factors. The presence of the $s$-quark inside the $B_s$-meson dictates a notable departure of approximately $20\%$ in the $λ_{B_s}$ value compared to the non-strange case $λ_{B_q}$, as…
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We investigate the inverse moment of the $B_s$-meson light-cone distribution amplitude (LCDA), denoted as $λ_{B_s}$ and defined within the heavy quark effective theory, through the calculation of $B_s \to η_s$ form factors. The presence of the $s$-quark inside the $B_s$-meson dictates a notable departure of approximately $20\%$ in the $λ_{B_s}$ value compared to the non-strange case $λ_{B_q}$, as computed within the QCD sum rule approach, albeit with significant uncertainty. First, we compute the decay constant of the $η_s$-meson utilizing two-point sum rules while retaining finite $s$-quark mass contributions. Next, we constrain the parameter $λ_{B_s}$ by calculating $B_s \to η_s$ form factors within the light-cone sum rule approach, using $B_s$-meson LCDAs, and leveraging Lattice QCD estimates at zero momentum transfer from the HPQCD collaboration. Our findings yield $λ_{B_s}$ = 480 $\pm$ 92 MeV when expressing the $B_s$-meson LCDAs in the Exponential model, consistent with previous QCD sum rule estimate yet exhibiting a 1.5-fold improvement in uncertainty. Furthermore, we compare the form factor predictions, based on the extracted $λ_{B_s}$ value, with earlier analyses for other channels such as $B_s \to D_s$ and $B_s \to K$.
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Submitted 3 July, 2024; v1 submitted 26 February, 2024;
originally announced February 2024.
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Investigating the Temperature Effects on Resistive Random Access Memory (RRAM) Devices
Authors:
T. D. Dongale,
K. V. Khot,
S. V. Mohite,
S. S. Khandagale,
S. S. Shinde,
A. V. Moholkar,
K. Y. Rajpure,
P. N. Bhosale,
P. S. Patil,
P. K. Gaikwad,
R. K. Kamat
Abstract:
In this paper, we report the effect of filament radius and filament resistivity on the saturated temperature of ZnO, TiO2, WO3 and HfO2 Resistive Random Access Memory (RRAM) devices. We resort to the thermal reaction model of RRAM for the present analysis. The results substantiate decrease in saturated temperature with increase in the radius and resistivity of filament for the investigated RRAM de…
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In this paper, we report the effect of filament radius and filament resistivity on the saturated temperature of ZnO, TiO2, WO3 and HfO2 Resistive Random Access Memory (RRAM) devices. We resort to the thermal reaction model of RRAM for the present analysis. The results substantiate decrease in saturated temperature with increase in the radius and resistivity of filament for the investigated RRAM devices. Moreover, a sudden change in the saturated temperature at a lower value of filament radius and resistivity is observed as against the steady change at the medium and higher value of the filament radius and resistivity. Results confirm the dependence of saturated temperature on the filament size and resistivity in RRAM.
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Submitted 26 February, 2016;
originally announced February 2016.
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A Processing In-Memory Realization Using QCA: Proposal and Implementation
Authors:
P. P. Chougule,
B. Sen,
R. Mukherjee,
V. C. Karade,
P. S. Patil,
T. D. Dongale,
R. K. Kamat
Abstract:
Processing in Memory (PIM) is a computing paradigm that promises enormous gain in processing speed by eradicating latencies in the typical von Neumann architecture. It has gained popularity owing to its throughput by embedding storage and computation of data in a single unit. We portray implementation of Akers array architecture endowed with PIM computation using Quantum-dot Cellular Automata (QCA…
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Processing in Memory (PIM) is a computing paradigm that promises enormous gain in processing speed by eradicating latencies in the typical von Neumann architecture. It has gained popularity owing to its throughput by embedding storage and computation of data in a single unit. We portray implementation of Akers array architecture endowed with PIM computation using Quantum-dot Cellular Automata (QCA). We present the proof of concept of PIM with its realization in the QCA designer paradigm. We illustrate implementation of Ex-OR gate with the help of QCA based Akers Array and put forth many interesting potential possibilities.
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Submitted 6 February, 2016;
originally announced February 2016.
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Investigating Reliability Aspects of Memristor based RRAM with Reference to Write Voltage and Frequency
Authors:
T. D. Dongale,
K. V. Khot,
S. V. Mohite,
N. K. Desai,
S. S. Shinde,
A. V. Moholkar,
K. Y. Rajpure,
P. N. Bhosale,
P. S. Patil,
P. K. Gaikwad,
R. K. Kamat
Abstract:
In this paper, we report the effect of write voltage and frequency on memristor based Resistive Random Access Memory (RRAM). The above said parameters have been investigated on the linear drift model of memristor. With a variation of write voltage from 0.2V to 1.2V and a subsequent frequency modulation from 1, 2, 4, 10, 100 and 200 Hz the corresponding effects on memory window, Low Resistance Stat…
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In this paper, we report the effect of write voltage and frequency on memristor based Resistive Random Access Memory (RRAM). The above said parameters have been investigated on the linear drift model of memristor. With a variation of write voltage from 0.2V to 1.2V and a subsequent frequency modulation from 1, 2, 4, 10, 100 and 200 Hz the corresponding effects on memory window, Low Resistance State (LRS) and High Resistance State (HRS) have been reported. Thus the lifetime (τ) reliability analysis of memristor based RRAM is carried out using above results. It is found that, the HRS is independent of write voltage, whereas LRS shows dependency on write voltage and frequency. The simulation results showcase that the memristor possess higher memory window and lifetime (τ) in the higher voltage with lower frequency region, which has been attributed to the fewer data losses in the memory architecture.
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Submitted 5 February, 2016;
originally announced February 2016.
