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Towards Develo** Mid-Infrared Photonics Using Mxenes
Authors:
Yas Al-Hadeethi,
Chandraman Patil,
Wafa Said Bait Haridh,
Moustafa Ahmed,
Jamaan E. Alassafi,
Nada M. Bedaiwi,
Elham Heidari,
Hamed Dalir
Abstract:
Recent research and development in the mid-infrared (IR) wavelength range (2-20 um) for a variety of applications, such as trace gas monitoring, thermal imaging, and free space communications have shown tremendous and fascinating progress. MXenes, which mainly refer to two-dimensional (2D) transition-metal carbides, nitrides, and carbonitrides, have drawn a lot of interest since their first invest…
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Recent research and development in the mid-infrared (IR) wavelength range (2-20 um) for a variety of applications, such as trace gas monitoring, thermal imaging, and free space communications have shown tremendous and fascinating progress. MXenes, which mainly refer to two-dimensional (2D) transition-metal carbides, nitrides, and carbonitrides, have drawn a lot of interest since their first investigation in 2011. MXenes project enormous potential for use in optoelectronics, photonics, catalysis, and energy harvesting fields proven by extensive experimental and theoretical studies over a decade. MXenes offers a novel 2D nano platform for cutting-edge optoelectronics devices due to their interesting mechanical, optical, and electrical capabilities, along with their elemental and chemical composition. We here discuss the key developments of MXene emphasizing the evolution of material synthesis methods over time and the resulting device applications. Photonic and optoelectronic device design and fabrication for mid-IR photonics are demonstrated by integrating MXene materials with various electrical and photonic platforms. Here, we show the potential of using Mxene in photonics for mid-IR applications and a pathway toward achieving next-generation devices for various applications.
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Submitted 5 October, 2023;
originally announced October 2023.
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Self-powered Broadband Photodetector on Flexible Substrate from Visible to Near Infrared Wavelength
Authors:
Hao Wang,
Chaobo Dong,
Yaliang Gui,
Jiachi Ye,
Salem Altaleb,
Martin Thomaschewski,
Behrouz Movahhed Nouri,
b Chandraman Patil,
Hamed Dalir,
Volker J Sorger
Abstract:
Van der Waals (vdWs) heterostructures assembled by stacking 2D crystal layers have proven to be a new material platform for high-performance optoelectronic applications such as thin film transistors, photodetectors, and emitters. Here, we demonstrate a novel device with strain tuning capabilities using MoS2/Sb2Te3 vdWs p-n heterojunction devices designed for photodetection in the visible to near-i…
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Van der Waals (vdWs) heterostructures assembled by stacking 2D crystal layers have proven to be a new material platform for high-performance optoelectronic applications such as thin film transistors, photodetectors, and emitters. Here, we demonstrate a novel device with strain tuning capabilities using MoS2/Sb2Te3 vdWs p-n heterojunction devices designed for photodetection in the visible to near-infrared spectrum. The heterojunction devices exhibit remarkable characteristics, such as a low dark current in the range of a few picoamperes and a high photoresponsivity of 0.12 A/W. Furthermore, the proposed devices exhibit exceptional tunability when subjected to a compressive strain of up to 0.3%. By introducing strain at the interface of the heterojunction, the materials bandgap is affected resulting in a significant change in the band structure of the heterojunction. This leads to a change in the detectors optical absorption characteristics improving the responsivity of the device. The proposed strain-induced engineering of the electronic and optical properties of the stacked 2D crystal materials allows tuning of the optoelectronic performance of vdWs devices for high-performance and low-power consumption applications for applications like wearable sensors and flexible electro-optic circuits.
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Submitted 14 May, 2023;
originally announced May 2023.
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Continuous production for large quantity plasma activated water using multiple plasma device setup
Authors:
Vikas Rathore,
Chirayu Patil,
Sudhir Kumar Nema
Abstract:
In the present work, a batch and continuous production of plasma-activated water (PAW) is reported. To produce PAW in a batch and continuous manner a multiple plasma device setup is used. The multiple plasma device consists of a series of plasma devices that are powered simultaneously to produce PAW. This multiple plasma device is powered by indigenously developed high-voltage high-frequency power…
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In the present work, a batch and continuous production of plasma-activated water (PAW) is reported. To produce PAW in a batch and continuous manner a multiple plasma device setup is used. The multiple plasma device consists of a series of plasma devices that are powered simultaneously to produce PAW. This multiple plasma device is powered by indigenously developed high-voltage high-frequency power supply. The air plasma generated in this multiple plasma device setup is electrically characterized and the produced radicals/species are identified using optical emission spectroscopy. The post-discharge effluent gases left after plasma-water exposure carries some environmental pollutants (NOx and O3, etc.). The batch and continuous PAW production setup utilizes effluent (pollutants) gases in production of large volume PAW. Hence, it substantially reduces the concentration of these pollutants in effluent gases which are released in environment. The batch process produces high reactive PAW with less volume (2 liters). Moreover, in a continuous process, a high volume (20 liters) with low reactivity of PAW is produced. The high reactive PAW and low reactive PAW are used for different applications. Inactivation of microbes (bacteria, fungi, viruses, and pests), food preservation, selective killing of cells, etc. is carried out using high reactive PAW whereas low reactive PAW has applications in seeds germination, plant growth, and as a nitrogen source for agriculture and aquaculture applications, etc. In addition, the batch and continuous PAW production setup designs are scalable, therefore, can be used in industries for PAW production.
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Submitted 17 December, 2022;
originally announced January 2023.
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Adversarial synthesis based data-augmentation for code-switched spoken language identification
Authors:
Parth Shastri,
Chirag Patil,
Poorval Wanere,
Dr. Shrinivas Mahajan,
Dr. Abhishek Bhatt,
Dr. Hardik Sailor
Abstract:
Spoken Language Identification (LID) is an important sub-task of Automatic Speech Recognition(ASR) that is used to classify the language(s) in an audio segment. Automatic LID plays an useful role in multilingual countries. In various countries, identifying a language becomes hard, due to the multilingual scenario where two or more than two languages are mixed together during conversation. Such phe…
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Spoken Language Identification (LID) is an important sub-task of Automatic Speech Recognition(ASR) that is used to classify the language(s) in an audio segment. Automatic LID plays an useful role in multilingual countries. In various countries, identifying a language becomes hard, due to the multilingual scenario where two or more than two languages are mixed together during conversation. Such phenomenon of speech is called as code-mixing or code-switching. This nature is followed not only in India but also in many Asian countries. Such code-mixed data is hard to find, which further reduces the capabilities of the spoken LID. Hence, this work primarily addresses this problem using data augmentation as a solution on the on the data scarcity of the code-switched class. This study focuses on Indic language code-mixed with English. Spoken LID is performed on Hindi, code-mixed with English. This research proposes Generative Adversarial Network (GAN) based data augmentation technique performed using Mel spectrograms for audio data. GANs have already been proven to be accurate in representing the real data distribution in the image domain. Proposed research exploits these capabilities of GANs in speech domains such as speech classification, automatic speech recognition, etc. GANs are trained to generate Mel spectrograms of the minority code-mixed class which are then used to augment data for the classifier. Utilizing GANs give an overall improvement on Unweighted Average Recall by an amount of 3.5% as compared to a Convolutional Recurrent Neural Network (CRNN) classifier used as the baseline reference.
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Submitted 1 June, 2022; v1 submitted 30 May, 2022;
originally announced May 2022.
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Observation of slow light in glide-symmetric photonic-crystal waveguides
Authors:
Chirag Murendranath Patil,
Guillermo Arregui,
Morten Mechlenborg,
Xiaoyan Zhou,
Hadiseh Alaeian,
Pedro David García,
Søren Stobbe
Abstract:
We report optical transmission measurements on suspended silicon photonic-crystal waveguides, where one side of the photonic lattice is shifted by half a period along the waveguide axis. The combination of this glide symmetry and slow light leads to a strongly enhanced chiral light-matter interaction but the interplay between slow light and backscattering has not been investigated experimentally i…
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We report optical transmission measurements on suspended silicon photonic-crystal waveguides, where one side of the photonic lattice is shifted by half a period along the waveguide axis. The combination of this glide symmetry and slow light leads to a strongly enhanced chiral light-matter interaction but the interplay between slow light and backscattering has not been investigated experimentally in such waveguides. We build photonic-crystal resonators consisting of glide-symmetric waveguides terminated by reflectors and use transmission measurements as well as evanescent coupling to map out the dispersion relation. We find excellent agreement with theory and measure group indices exceeding 90, implying significant potential for applications in slow-light devices and chiral quantum optics. By measuring resonators of different length, we assess the role of backscattering induced by fabrication imperfections and its intimate connection to the group index.
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Submitted 23 November, 2021;
originally announced November 2021.
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Integrated ultra-high-performance graphene optical modulator
Authors:
Elham Heidari,
Hamed Dalir,
Farzad Mokhtari-Koushyar,
Behrouz Movahhed Nouri,
Chandraman Patil,
Mario Miscuglio,
Deji Akinwande,
Volker Sorger
Abstract:
With the increasing need for large volumes of data processing, transport, and storage, optimizing the trade-off between high-speed and energy consumption in today's optoelectronic devices is getting increasingly difficult. Heterogeneous material integration into Silicon- and Nitride-based photonics has showed high-speed promise, albeit at the expense of millimeter- to centimeter-scale footprints.…
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With the increasing need for large volumes of data processing, transport, and storage, optimizing the trade-off between high-speed and energy consumption in today's optoelectronic devices is getting increasingly difficult. Heterogeneous material integration into Silicon- and Nitride-based photonics has showed high-speed promise, albeit at the expense of millimeter- to centimeter-scale footprints. The hunt for an electro-optic modulator that combines high speed, energy efficiency, and compactness to support high component density on-chip continues. Using a double-layer graphene optical modulator integrated on a Silicon photonics platform, we are able to achieve 60 GHz speed (3 dB roll-off), micrometer compactness, and efficiency of 2.25 fJ/bit in this paper. The electro-optic response is boosted further by a vertical distributed-Bragg-reflector cavity, which reduces the driving voltage by about 40 times while maintaining a sufficient modulation depth (5.2 dB/V). Modulators that are small, efficient, and quick allow high photonic chip density and performance, which is critical for signal processing, sensor platforms, and analog- and neuromorphic photonic processors.
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Submitted 28 February, 2022; v1 submitted 15 September, 2021;
originally announced September 2021.
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Highly Accurate, Reliable and Non-Contaminating Two-Dimensional Material Transfer System
Authors:
Chandraman Patil,
Hamed Dalir,
** Ho Kang,
Albert Davydov,
Chee Wei Wong,
Volker J. Sorger
Abstract:
The exotic properties of two-dimensional (2D) materials and 2D heterostructures, built by forming heterogeneous multi-layered stacks, have been widely explored across a number of subject matters following the goal to invent, design, and improve applications enabled by 2D materials. To successfully harvest these unique properties effectively and increase the yield of manufacturing 2D material-based…
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The exotic properties of two-dimensional (2D) materials and 2D heterostructures, built by forming heterogeneous multi-layered stacks, have been widely explored across a number of subject matters following the goal to invent, design, and improve applications enabled by 2D materials. To successfully harvest these unique properties effectively and increase the yield of manufacturing 2D material-based devices for achieving reliable and repeatable results is the current challenge. The scientific community has introduced various experimental transfer systems explained in detail for exfoliated 2D materials, however, the field lacks statistical analysis and the capability of producing a transfer technique enabling; i) high transfer precision and yield, ii) cross-contamination free transfer, iii) multi-substrate transfer, and iv) rapid prototy** without wet chemistry. Here we introduce a novel 2D material deterministic transfer system and experimentally show its high accuracy, reliability, repeatability, and non-contaminating transfer features by demonstrating fabrication of 2D material-based optoelectronic devices featuring novel device physics and unique functionality. Such rapid and material-near prototy** capability can accelerate not only layered material science in discovery but also engineering innovations.
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Submitted 17 September, 2021; v1 submitted 10 September, 2021;
originally announced September 2021.
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Self-Driven Highly Responsive PN Junction InSe Heterostructure Near-Infrared Light Detector
Authors:
Chandraman Patil,
Chaobo Dong,
Hamed Dalir,
Sergiy Krylyuk,
Albert V. Davydov,
Volker J. Sorger
Abstract:
Photodetectors converting light signals into detectable photocurrents are ubiquitously in use today. To improve the compactness and performance of next-generation devices and systems, low dimensional materials provide rich physics to engineering the light matter interaction. Photodetectors based on two dimensional (2D) material van der Waals heterostructures have shown high responsivity and compac…
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Photodetectors converting light signals into detectable photocurrents are ubiquitously in use today. To improve the compactness and performance of next-generation devices and systems, low dimensional materials provide rich physics to engineering the light matter interaction. Photodetectors based on two dimensional (2D) material van der Waals heterostructures have shown high responsivity and compact integration capability, mainly in the visible range due to their intrinsic bandgap. The spectral region of near-infrared (NIR) is technologically important featuring many data communication and sensing applications. While some initial NIR 2D material-based detectors have emerged, demonstrating do** junction based 2D material photodetectors with the capability to harness the charge separation photovoltaic effect are yet outstanding. Here, we demonstrate a 2D p-n van der Waals heterojunction photodetector constructed by vertically stacking p type and n type few layer indium selenide (InSe) 2D flakes. This heterojunction charge separation based photodetector shows a three fold enhancement in responsivity at near infrared spectral region (980 nm) as compared to a photoconductor detector based on p or n only doped regions, respectively. We show, that this junction device exhibits self-powered photodetection operation and hence enables few pA-low dark currents, which is about 4 orders of magnitude more efficient than state of the art foundry based devices.
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Submitted 4 June, 2022; v1 submitted 24 August, 2021;
originally announced August 2021.
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Audio scene monitoring using redundant ad-hoc microphone array networks
Authors:
Peter Gerstoft,
Yihan Hu,
Michael J. Bianco,
Chaitanya Patil,
Ardel Alegre,
Yoav Freund,
Francois Grondin
Abstract:
We present a system for localizing sound sources in a room with several ad-hoc microphone arrays. Each circular array performs direction of arrival (DOA) estimation independently using commercial software. The DOAs are fed to a fusion center, concatenated, and used to perform the localization based on two proposed methods, which require only few labeled source locations (anchor points) for trainin…
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We present a system for localizing sound sources in a room with several ad-hoc microphone arrays. Each circular array performs direction of arrival (DOA) estimation independently using commercial software. The DOAs are fed to a fusion center, concatenated, and used to perform the localization based on two proposed methods, which require only few labeled source locations (anchor points) for training. The first proposed method is based on principal component analysis (PCA) of the observed DOA and does not require any knowledge of anchor points. The array cluster can then perform localization on a manifold defined by the PCA of concatenated DOAs over time. The second proposed method performs localization using an affine transformation between the DOA vectors and the room manifold. The PCA has fewer requirements on the training sequence, but is less robust to missing DOAs from one of the arrays. The methods are demonstrated with five IoT 8-microphone circular arrays, placed at unspecified fixed locations in an office. Both the PCA and the affine method can easily map out a rectangle based on a few anchor points with similar accuracy. The proposed methods provide a step towards monitoring activities in a smart home and require little installation effort as the array locations are not needed.
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Submitted 23 August, 2021; v1 submitted 2 March, 2021;
originally announced March 2021.
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Strain Induced Modulation of Local Transport of 2D Materials at the Nanoscale
Authors:
Rishi Maiti,
Md Abid Shahriar Rahman Saadi,
Rubab Amin,
Ongun Ozcelik,
Berkin Uluutku,
Chandraman Patil,
Can Suer,
Santiago Solares,
Volker J. Sorger
Abstract:
Strain engineering offers unique control to manipulate the electronic band structure of two-dimensional materials (2DMs) resulting in an effective and continuous tuning of the physical properties. Ad-hoc straining 2D materials has demonstrated novel devices including efficient photodetectors at telecommunication frequencies, enhanced-mobility transistors, and on-chip single photon source, for exam…
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Strain engineering offers unique control to manipulate the electronic band structure of two-dimensional materials (2DMs) resulting in an effective and continuous tuning of the physical properties. Ad-hoc straining 2D materials has demonstrated novel devices including efficient photodetectors at telecommunication frequencies, enhanced-mobility transistors, and on-chip single photon source, for example. However, in order to gain insights into the underlying mechanism required to enhance the performance of the next-generation devices with strain(op)tronics, it is imperative to understand the nano- and microscopic properties as a function of a strong non-homogeneous strain. Here, we study the strain-induced variation of local conductivity of a few-layer transition-metal-dichalcogenide using a conductive atomic force microscopy. We report a novel strain characterization technique by capturing the electrical conductivity variations induced by local strain originating from surface topography at the nanoscale, which allows overcoming limitations of existing optical spectroscopy techniques. We show that the conductivity variations parallel the strain deviations across the geometry predicted by molecular dynamics simulation. These results substantiate a variation of the effective mass and surface charge density by .026 me/% and .03e/% of uniaxial strain, respectively. Furthermore, we show and quantify how a gradual reduction of the conduction band minima as a function of tensile strain explains the observed reduced effective Schottky barrier height. Such spatially-textured electronic behavior via surface topography induced strain variations in atomistic-layered materials at the nanoscale opens up new opportunities to control fundamental material properties and offers a myriad of design and functional device possibilities for electronics, nanophotonics, flextronics, or smart cloths.
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Submitted 14 December, 2020;
originally announced December 2020.
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Investigating the origin of cube texture during static recrystallization of fcc metals : A full field crystal plasticity-phase field study
Authors:
Supriyo Chakraborty,
Chaitali S. Patil,
Yunzhi Wang,
Stephen R. Niezgoda
Abstract:
The origin of cube recrystallization texture in medium to high stacking-fault energy fcc metals has been debated for almost 70 years. Despite numerous experimental and simulation studies, many issues regarding the nucleation and growth of cube grains remain unresolved. Here we apply a full field crystal plasticity model utilizing a dislocation density based constitutive theory to study the deforma…
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The origin of cube recrystallization texture in medium to high stacking-fault energy fcc metals has been debated for almost 70 years. Despite numerous experimental and simulation studies, many issues regarding the nucleation and growth of cube grains remain unresolved. Here we apply a full field crystal plasticity model utilizing a dislocation density based constitutive theory to study the deformation and texture evolution in copper (Cu) under plane strain compression. Additionally, we use the phase field method, along with a stochastic nucleation model, for static recrystallization simulations. Simulation results show that the volume fraction of the cube component during deformation decreases with increasing strain. Although cube grains are not stable during plane strain compression, some of the non-cube grains rotate towards cube and develop narrow cube bands near the grain boundary region. With increasing deformation, the cube component accumulates dislocation density faster than other texture components. High stored energy in the cube regions leads to preferential nucleation of cube grains during static recrystallization. These cube nuclei originate from the intergranular cube bands. Although the cube component has a clear nucleation advantage, none of the texture component appears to have a growth advantage. Instead, simulation results show that heterogeneous distribution of nuclei has a profound influence on the resulting grain size distribution. During recrystallization, a significant increase in cube volume fraction is observed mainly due to high nucleation frequency of cube grains.
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Submitted 11 June, 2020;
originally announced June 2020.
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Strain-Engineered High Responsivity MoTe2 Photodetector for Silicon Photonic Integrated Circuits
Authors:
R. Maiti,
C. Patil,
T. Xie,
J. G. Azadani,
M. A. S. R. Saadi,
R. Amin,
M. Miscuglio,
D. Van Thourhout,
S. D. Solares,
T. Low,
R. Agarwal,
S. Bank,
V. J. Sorger
Abstract:
In integrated photonics, specific wavelengths are preferred such as 1550 nm due to low-loss transmission and the availability of optical gain in this spectral region. For chip-based photodetectors, layered two-dimensional (2D) materials bear scientific and technologically-relevant properties leading to strong light-matter-interaction devices due to effects such as reduced coulomb screening or exci…
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In integrated photonics, specific wavelengths are preferred such as 1550 nm due to low-loss transmission and the availability of optical gain in this spectral region. For chip-based photodetectors, layered two-dimensional (2D) materials bear scientific and technologically-relevant properties leading to strong light-matter-interaction devices due to effects such as reduced coulomb screening or excitonic states. However, no efficient photodetector in the telecommunication C-band using 2D materials has been realized yet. Here, we demonstrate a MoTe2-based photodetector featuring strong photoresponse (responsivity = 0.5 A/W) operating at 1550nm on silicon photonic waveguide enabled by engineering the strain (4%) inside the photo-absorbing transition-metal-dichalcogenide film. We show that an induced tensile strain of ~4% reduces the bandgap of MoTe2 by about 0.2 eV by microscopically measuring the work-function across the device. Unlike Graphene-based photodetectors relying on a gapless band structure, this semiconductor-2D material detector shows a ~100X improved dark current enabling an efficient noise-equivalent power of just 90 pW/Hz^0.5. Such strain-engineered integrated photodetector provides new opportunities for integrated optoelectronic systems.
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Submitted 22 December, 2019; v1 submitted 31 October, 2019;
originally announced December 2019.
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Physical Design Obfuscation of Hardware: A Comprehensive Investigation of Device- and Logic-Level Techniques
Authors:
Arunkumar Vijayakumar,
Vinay C. Patil,
Daniel E. Holcomb,
Christof Paar,
Sandip Kundu
Abstract:
The threat of hardware reverse engineering is a growing concern for a large number of applications. A main defense strategy against reverse engineering is hardware obfuscation. In this paper, we investigate physical obfuscation techniques, which perform alterations of circuit elements that are difficult or impossible for an adversary to observe. The examples of such stealthy manipulations are chan…
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The threat of hardware reverse engineering is a growing concern for a large number of applications. A main defense strategy against reverse engineering is hardware obfuscation. In this paper, we investigate physical obfuscation techniques, which perform alterations of circuit elements that are difficult or impossible for an adversary to observe. The examples of such stealthy manipulations are changes in the do** concentrations or dielectric manipulations. An attacker will, thus, extract a netlist, which does not correspond to the logic function of the device-under-attack. This approach of camouflaging has garnered recent attention in the literature. In this paper, we expound on this promising direction to conduct a systematic end-to-end study of the VLSI design process to find multiple ways to obfuscate a circuit for hardware security. This paper makes three major contributions. First, we provide a categorization of the available physical obfuscation techniques as it pertains to various design stages. There is a large and multidimensional design space for introducing obfuscated elements and mechanisms, and the proposed taxonomy is helpful for a systematic treatment. Second, we provide a review of the methods that have been proposed or in use. Third, we present recent and new device and logic-level techniques for design obfuscation. For each technique considered, we discuss feasibility of the approach and assess likelihood of its detection. Then we turn our focus to open research questions, and conclude with suggestions for future research directions.
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Submitted 2 October, 2019;
originally announced October 2019.
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Loss and Coupling Tuning via Heterogeneous Integration of MoS2 Layers in Silicon Photonics
Authors:
Rishi Maiti,
Chandraman Patil,
Rohit Hemnani,
Mario Miscuglio,
Rubab Amin,
Zhizhen Ma,
Rimjhim Chaudhary,
Charlie Johnson,
Ludwig Bartels,
Ritesh Agarwal,
Volker J. Sorger
Abstract:
Layered two-dimensional (2D) materials provide a wide range of unique properties as compared to their bulk counterpart, making them ideal for heterogeneous integration for on-chip interconnects. Hence, a detailed understanding of the loss and index change on Si integrated platform is a prerequisite for advances in opto-electronic devices impacting optical communication technology, signal processin…
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Layered two-dimensional (2D) materials provide a wide range of unique properties as compared to their bulk counterpart, making them ideal for heterogeneous integration for on-chip interconnects. Hence, a detailed understanding of the loss and index change on Si integrated platform is a prerequisite for advances in opto-electronic devices impacting optical communication technology, signal processing, and possibly photonic-based computing. Here, we present an experimental guide to characterize transition metal dichalcogenides (TMDs), once monolithically integrated into the Silicon photonic platform at 1.55 um wavelength. We describe the passive tunable coupling effect of the resonator in terms of loss induced as a function of 2D material layer coverage length and thickness. Further, we demonstrate a TMD-ring based hybrid platform as a refractive index sensor where resonance shift has been mapped out as a function of flakes thickness which correlates well with our simulated data. These experimental findings on passive TMD-Si hybrid platform open up a new dimension by controlling the effective change in loss and index, which may lead to the potential application of 2D material based active on chip photonics.
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Submitted 25 October, 2018; v1 submitted 23 October, 2018;
originally announced October 2018.
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Multiple-Instance, Cascaded Classification for Keyword Spotting in Narrow-Band Audio
Authors:
Ahmad AbdulKader,
Kareem Nassar,
Mohamed Mahmoud,
Daniel Galvez,
Chetan Patil
Abstract:
We propose using cascaded classifiers for a keyword spotting (KWS) task on narrow-band (NB), 8kHz audio acquired in non-IID environments --- a more challenging task than most state-of-the-art KWS systems face. We present a model that incorporates Deep Neural Networks (DNNs), cascading, multiple-feature representations, and multiple-instance learning. The cascaded classifiers handle the task's clas…
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We propose using cascaded classifiers for a keyword spotting (KWS) task on narrow-band (NB), 8kHz audio acquired in non-IID environments --- a more challenging task than most state-of-the-art KWS systems face. We present a model that incorporates Deep Neural Networks (DNNs), cascading, multiple-feature representations, and multiple-instance learning. The cascaded classifiers handle the task's class imbalance and reduce power consumption on computationally-constrained devices via early termination. The KWS system achieves a false negative rate of 6% at an hourly false positive rate of 0.75
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Submitted 21 November, 2017;
originally announced November 2017.