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Hydrogen is not necessary for superconductivity in topotactically reduced nickelates
Authors:
Purnima P. Balakrishnan,
Dan Ferenc Segedin,
Lin Er Chow,
P. Quarterman,
Shin Muramoto,
Mythili Surendran,
Ranjan K. Patel,
Harrison LaBollita,
Grace A. Pan,
Qi Song,
Yang Zhang,
Ismail El Baggari,
Koushik Jagadish,
Yu-Tsun Shao,
Berit H. Goodge,
Lena F. Kourkoutis,
Srimanta Middey,
Antia S. Botana,
Jayakanth Ravichandran,
A. Ariando,
Julia A. Mundy,
Alexander J. Grutter
Abstract:
A key open question in the study of layered superconducting nickelate films is the role that hydrogen incorporation into the lattice plays in the appearance of the superconducting state. Due to the challenges of stabilizing highly crystalline square planar nickelate films, films are prepared by the deposition of a more stable parent compound which is then transformed into the target phase via a to…
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A key open question in the study of layered superconducting nickelate films is the role that hydrogen incorporation into the lattice plays in the appearance of the superconducting state. Due to the challenges of stabilizing highly crystalline square planar nickelate films, films are prepared by the deposition of a more stable parent compound which is then transformed into the target phase via a topotactic reaction with a strongly reducing agent such as CaH$_2$. Recent studies, both experimental and theoretical, have introduced the possibility that the incorporation of hydrogen from the reducing agent into the nickelate lattice may be critical for the superconductivity. In this work, we use secondary ion mass spectrometry to examine superconducting La$_{1-x}$X$_x$NiO$_2$ / SrTiO$_3$ (X = Ca and Sr) and Nd$_6$Ni$_5$O$_{12}$ / NdGaO$_3$ films, along with non-superconducting NdNiO$_2$ / SrTiO$_3$ and (Nd,Sr)NiO$_2$ / SrTiO$_3$. We find no evidence for extensive hydrogen incorporation across a broad range of samples, including both superconducting and non-superconducting films. Theoretical calculations indicate that hydrogen incorporation is broadly energetically unfavorable in these systems, supporting our conclusion that hydrogen incorporation is not generally required to achieve a superconducting state in layered square-planar nickelates.
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Submitted 4 March, 2024;
originally announced March 2024.
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High-speed sensing of RF signals with phase change materials
Authors:
Ranjan Kumar Patel,
Yifan Yuan,
Ravindra Singh Bisht,
Ivan Seskar,
Narayan Mandayam,
Shriram Ramanathan
Abstract:
RF radiation spectrum is central to wireless and radar systems among numerous high-frequency device technologies. Here, we demonstrate sensing of RF signals in the technologically relevant 2.4 GHz range utilizing vanadium dioxide (VO2), a quantum material that has garnered significant interest for its insulator-to-metal transition. We find the electrical resistance of both stoichiometric as well a…
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RF radiation spectrum is central to wireless and radar systems among numerous high-frequency device technologies. Here, we demonstrate sensing of RF signals in the technologically relevant 2.4 GHz range utilizing vanadium dioxide (VO2), a quantum material that has garnered significant interest for its insulator-to-metal transition. We find the electrical resistance of both stoichiometric as well as off-stoichiometric vanadium oxide films can be modulated with RF wave exposures from a distance. The response of the materials to the RF waves can be enhanced by either increasing the power received by the sample or reducing channel separation. We report a significant ~73% drop in resistance with a 5 μm channel gap of the VO2 film at a characteristic response time of 16 microseconds. The peak sensitivity is proximal to the phase transition temperature boundary that can be engineered via do** and crystal chemistry. Dynamic sensing measurements highlight the films' rapid response and broad-spectrum sensitivity. Engineering electronic phase boundaries in correlated electron systems could offer new capabilities in emerging communication technologies.
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Submitted 11 December, 2023;
originally announced December 2023.
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Electron correlation mediated site-selective charge compensation in polar/non-polar heterointerface
Authors:
Nandana Bhattacharya,
Arpita Sen,
Jianwei Zhang,
Ranjan Kumar Patel,
Siddharth Kumar,
Prithwijit Mandal,
Shashank Kumar Ojha,
Jyotirmay Maity,
Zhan Zhang,
Hua Zhou,
Fanny Rodolakis,
Padraic Shafer,
Christoph Klewe,
John William Freeland,
Zhenzhong Yang,
Umesh Waghmare,
Srimanta Middey
Abstract:
One of the boundary conditions of the classical electromagnetic theory demands continuous electric potential across any boundary, which may not be naturally satisfied in atomically engineered heterostructures. Such polarity mismatch in oxide heterointerfaces is compensated through some (electronic/chemical/structural) reconstructions, leading to a myriad of emergent phenomena. The question we are…
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One of the boundary conditions of the classical electromagnetic theory demands continuous electric potential across any boundary, which may not be naturally satisfied in atomically engineered heterostructures. Such polarity mismatch in oxide heterointerfaces is compensated through some (electronic/chemical/structural) reconstructions, leading to a myriad of emergent phenomena. The question we are posing is whether conventional semiconductor band bending framework is sufficient to comprehend compensation mechanisms in oxide heterostructures since, unlike semiconductors, complex oxides host strong electron correlations whose effects are indispensable. To address this, we investigate the interface between a prototypical insulating double perovskite Nd$_2$NiMnO$_6$ and a wide-bandgap insulator SrTiO$_3$. This polar/non-polar interface offers a similar scenario as the famous LaAlO$_3$/SrTiO$_3$ system but with an exception - two transition metal sites with two individual correlated energy scales. By combining several experimental techniques and density functional theory, we establish a site-selective charge compensation process that occurs explicitly at the Mn site of the film, leaving the Ni sites inert. This surprising selectivity, which cannot be accounted by existing polar compensation mechanisms, is directly attributed to the TM cations' relative correlation energy scales. This discovery presents that site-specific charge compensation can be a designers tool for tailoring emergent phenomena in oxide heterostructures.
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Submitted 27 November, 2023;
originally announced November 2023.
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Dynamic hysteresis at a noisy saddle-node shows power-law scaling but nonuniversal exponent
Authors:
Satyaki Kundu,
Ranjan Kumar Patel,
Srimanta Middey,
Bhavtosh Bansal
Abstract:
Dynamic hysteresis, viz., delay in switching of a bistable system on account of the finite sweep rate of the drive has been extensively studied in dynamical and thermodynamic systems. Dynamic hysteresis results from slowing of the response around a saddle-node bifurcation. As a consequence, the hysteresis area increases with the sweep rate. Mean-field theory, relevant for noise-free situations, pr…
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Dynamic hysteresis, viz., delay in switching of a bistable system on account of the finite sweep rate of the drive has been extensively studied in dynamical and thermodynamic systems. Dynamic hysteresis results from slowing of the response around a saddle-node bifurcation. As a consequence, the hysteresis area increases with the sweep rate. Mean-field theory, relevant for noise-free situations, predicts power law scaling with the area scaling exponent of 2/3. We have experimentally investigated the dynamic hysteresis for a thermally-driven metal-insulator transition in a high quality NdNiO$_3$ thin film and found the scaling exponent to be about 1/3, far less than the mean field value. To understand this, we have numerically studied Langevin dynamics of the order parameter and found that noise, which can be thought to parallel finite temperature effects, influences the character of dynamic hysteresis by systematically lowering the dynamical exponent to as small as 0.2. The power law scaling character, on the other hand, is unaffected in the range of chosen parameters. This work rationalizes the ubiquitous power law scaling of the dynamic hysteresis as well as the wide variation in the scaling exponent between 0.66 and 0.2 observed in different systems over the last 30 years.
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Submitted 18 August, 2023;
originally announced August 2023.
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Orthorhombic distortion drives orbital ordering in an antiferromagnetic 3$d^1$ Mott insulator
Authors:
Prithwijit Mandal,
Shashank Kumar Ojha,
Duo Wang,
Ranjan Kumar Patel,
Siddharth Kumar,
Jyotirmay Maity,
Zhan Zhang,
Hua Zhou,
Christoph Klewe,
Padraic Shafer,
Biplab Sanyal,
Srimanta Middey
Abstract:
The orbital, which represents the shape of the electron cloud, very often strongly influences the manifestation of various exotic phenomena, e.g., magnetism, metal-insulator transition, colossal magnetoresistance, unconventional superconductivity etc. in solid-state systems. The observation of the antiferromagnetism in $RE$TiO$_3$ ($RE$=rare earth) series has been puzzling since the celebrated Kug…
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The orbital, which represents the shape of the electron cloud, very often strongly influences the manifestation of various exotic phenomena, e.g., magnetism, metal-insulator transition, colossal magnetoresistance, unconventional superconductivity etc. in solid-state systems. The observation of the antiferromagnetism in $RE$TiO$_3$ ($RE$=rare earth) series has been puzzling since the celebrated Kugel-Khomskii model of spin-orbital super exchange predicts ferromagnetism in an orbitally degenerate $d^1$ systems. Further, the existence of the orbitally ordered vs. orbital liquid phase in both antiferromagnetic and paramagnetic phase have been unsettled issues thus far. To address these long-standing questions, we investigate single crystalline film of PrTiO$_3$. Our synchrotron X-ray diffraction measurements confirm the retention of bulk-like orthorhombic ($D_{2h}$) symmetry in the thin film geometry. We observe similar X-ray linear dichroism signal in both paramagnetic and antiferromagnetic phase, which can be accounted by ferro orbital ordering (FOO). While the presence of $D_{2h}$ crystal field does not guarantee lifting of orbital degeneracy always, we find it to be strong enough in these rare-earth titanates, leading to the FOO state. Thus, our work demonstrates the orthorhombic distortion is the driving force for the orbital ordering of antiferromagnetic $RE$TiO$_3$.
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Submitted 15 June, 2023;
originally announced June 2023.
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Hole do** in a negative charge transfer insulator
Authors:
Ranjan Kumar Patel,
Krishnendu Patra,
Shashank Kumar Ojha,
Siddharth Kumar,
Sagar Sarkar,
J. W. Freeland,
J. W. Kim,
P. J. Ryan,
Priya Mahadevan,
S. Middey
Abstract:
$RE$NiO$_3$ is a negative charge transfer energy system and exhibits a temperature-driven metal-insulator transition (MIT), which is also accompanied by a bond disproportionation (BD) transition. In order to explore how hole do** affects the BD transition, we have investigated the electronic structure of single-crystalline thin films of Nd$_{1-x}$Ca$_x$NiO$_3…
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$RE$NiO$_3$ is a negative charge transfer energy system and exhibits a temperature-driven metal-insulator transition (MIT), which is also accompanied by a bond disproportionation (BD) transition. In order to explore how hole do** affects the BD transition, we have investigated the electronic structure of single-crystalline thin films of Nd$_{1-x}$Ca$_x$NiO$_3$ by synchrotron based experiments and {\it ab-initio} calculations. For a small value of $x$, we find that the doped holes are localized on one or more Ni sites around the dopant Ca$^{2+}$ ions, while the BD state for the rest of the lattice remains intact. The effective charge transfer energy ($Δ$) increases with Ca concentration and the formation of BD phase is not favored above a critical $x$, suppressing the insulating phase. Our present study firmly demonstrates that the appearance of BD mode is essential for the MIT and settles a long-standing debate about the role of structural distortions for the MIT of the $RE$NiO$_3$ series.
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Submitted 27 February, 2022;
originally announced February 2022.
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Electronic and magnetic properties of epitaxial thin film of Nd\tsubscript{0.5}Ba\tsuscriptb{0.5}MnO\tsubscript{3}
Authors:
Siddharth Kumar,
Shashank Kumar Ojha,
Ranjan Kumar Patel,
Prithwijit Mandal,
Nandana Bhattacharya,
S. Middey
Abstract:
Contradictory reports about the electronic and magnetic behavior of bulk Nd0:5Ba0:5MnO3 with uniform disorder exist in the literature. In this work, we investigate the thin films of Nd0:5Ba0:5MnO3, grown by pulsed laser deposition. The success of epitaxial growth in a layer-by-layer mode and high quality of the films have been confirmed by in-situ reflection high energy electron diffraction, atomi…
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Contradictory reports about the electronic and magnetic behavior of bulk Nd0:5Ba0:5MnO3 with uniform disorder exist in the literature. In this work, we investigate the thin films of Nd0:5Ba0:5MnO3, grown by pulsed laser deposition. The success of epitaxial growth in a layer-by-layer mode and high quality of the films have been confirmed by in-situ reflection high energy electron diffraction, atomic force microscopy, X-ray reflectivity, and, X-ray diffraction. These films are found to be insulting and exhibit spin-glass behavior at low temperatures. The study offers an opportunity to tune the competition between charge/orbital ordering and ferromagnetism in half-doped manganites through heterostructure engineering.
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Submitted 24 February, 2022;
originally announced February 2022.
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Electron trap** and detrap** in an oxide two-dimensional electron gas: The role of ferroelastic twin walls
Authors:
Shashank Kumar Ojha,
Sankalpa Hazra,
Prithwijit Mandal,
Ranjan Kumar Patel,
Shivam Nigam,
Siddharth Kumar,
S. Middey
Abstract:
The choice of electrostatic gating over the conventional chemical do** for phase engineering of quantum materials is attributed to the fact that the former can reversibly tune the carrier density without affecting the system's level of disorder. However, this proposition seems to break down in field-effect transistors involving SrTiO$_3$ (STO) based two-dimensional electron gases. Such peculiar…
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The choice of electrostatic gating over the conventional chemical do** for phase engineering of quantum materials is attributed to the fact that the former can reversibly tune the carrier density without affecting the system's level of disorder. However, this proposition seems to break down in field-effect transistors involving SrTiO$_3$ (STO) based two-dimensional electron gases. Such peculiar behavior is associated with the electron trap** under an external electric field. However, the microscopic nature of trap** centers remains an open question. In this paper, we investigate electric field-induced charge trap**/detrap** phenomena at the conducting interface between band insulators $γ$-Al$_2$O$_3$ and STO. Our transport measurements reveal that the charge trap** under +ve back gate voltage ($V_g$) above the tetragonal to cubic structural transition temperature ($T_c$) of STO is contributed by the electric field-assisted thermal escape of electrons from the quantum well, and the clustering of oxygen vacancies (OVs) as well. We observe an additional source of trap** below the $T_c$, which arises from the trap** of free carriers at the ferroelastic twin walls of STO. Application of -ve $V_g$ results in a charge detrap**, which vanishes above $T_c$ also. This feature demonstrates the crucial role of structural domain walls in the electrical transport properties of STO based heterostructures. The number of trapped (detrapped) charges at (from) the twin wall is controlled by the net polarity of the wall and is completely reversible with the sweep of $V_g$.
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Submitted 23 May, 2021;
originally announced May 2021.
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Giant orbital polarization of Ni$^{2+}$ in square planar environment
Authors:
Prithwijit Mandal,
Ranjan Kumar Patel,
Dibyata Rout,
Rajdeep Banerjee,
Rabindranath Bag,
Koushik Karmakar,
Awadhesh Narayan,
John W. Freeland,
Surjeet Singh,
Srimanta Middey
Abstract:
Understanding the electronic behavior of Ni$^{2+}$ in a square planar environment of oxygen is the key to unravel the origin of the recently discovered superconductivity in the hole doped nickelate Nd$_{0.8}$Sr$_{0.2}$NiO$_2$. To identify the major similarities/dissimilarities between nickelate and cuprate superconductivity, the study of the electronic structure of Ni$^{2+}$ and Cu$^{2+}$ in an id…
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Understanding the electronic behavior of Ni$^{2+}$ in a square planar environment of oxygen is the key to unravel the origin of the recently discovered superconductivity in the hole doped nickelate Nd$_{0.8}$Sr$_{0.2}$NiO$_2$. To identify the major similarities/dissimilarities between nickelate and cuprate superconductivity, the study of the electronic structure of Ni$^{2+}$ and Cu$^{2+}$ in an identical square planar environment is essential. In order to address these questions, we investigate the electronic structure of Sr$_2$CuO$_3$ and Ni doped Sr$_2$CuO$_3$ single crystals containing (Cu/Ni)O$_4$ square planar units. Our polarization dependent X-ray absorption spectroscopy experiments for Ni in Sr$_2$Cu$_{0.9}$Ni$_{0.1}$O$_3$ have revealed very large orbital polarization, which is a characteristic feature of high $T_c$ cuprate. This arises due to the low spin $S$=0 configuration with two holes in Ni 3$d_{x^2-y^2}$ orbitals - in contrast to the expected high spin $S$=1 state from Hund's first rule. The presence of such $S$=0 Ni$^{2+}$ in hole doped nickelate would be analogous to the Zhang Rice singlet. However, the Mott Hubbard insulating nature of the NiO$_4$ unit would point towards a different electronic phase space of nickelates, compared to high $T_c$ cuprates.
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Submitted 7 September, 2020;
originally announced September 2020.
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Structural, magnetic and dielectric properties in 3$d$-5$d$ based Sr$_2$FeIrO$_6$ thin films
Authors:
K. C. Kharkwal,
Roshan Kumar Patel,
K. Asokan,
A. K. Pramanik
Abstract:
The structural, magnetic and dielectric properties have been investigated in 3$d$-5$d$ based double perovskite Sr$_2$FeIrO$_6$ thin films deposited by pulse laser deposition technique. To understand the effect of strain, epitaxial films are grown with varying thickness as well as on different substrates i.e., SrTiO$_3$ (100) and LaAlO$_3$ (100). The films with highest thickness are found to be mor…
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The structural, magnetic and dielectric properties have been investigated in 3$d$-5$d$ based double perovskite Sr$_2$FeIrO$_6$ thin films deposited by pulse laser deposition technique. To understand the effect of strain, epitaxial films are grown with varying thickness as well as on different substrates i.e., SrTiO$_3$ (100) and LaAlO$_3$ (100). The films with highest thickness are found to be more relaxed. Atomic force microscope images indicate all films are of good quality where grain sizes increase with increase in film thickness. X-ray absorption spectroscopy measurements indicate a Ir$^{5+}$ charge state in present films while providing a detailed picture of hybridization between Fe/Ir-$d$ and O-$p$ orbitals. The bulk antiferromagnetic transition is retained in films though the transition temperature shifts to higher temperature. Both dielectric constant ($ε_r$) and loss ($\tanδ$) show change around the magnetic ordering temperatures of bulk Sr$_2$FeIrO$_6$ indicating a close relation between dielectric and magnetic behaviors. A Maxwell-Wagner type relaxation is found to follow over whole frequency range down to low temperature in present film. On changing the substrate i.e., LaAlO$_3$ (100), the $ε_r(T)$ and ($\tanδ(T)$) show almost similar behavior but $ε_r$ shows a higher value which is due to an increased strain coming from high mismatch of lattice parameters.
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Submitted 31 August, 2020;
originally announced August 2020.
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Oxygen Vacancy-Induced Topological Hall effect in a Nonmagnetic Band Insulator
Authors:
Shashank Kumar Ojha,
Sanat Kumar Gogoi,
Manju Mishra Patidar,
Ranjan Kumar Patel,
Prithwijit Mandal,
Siddharth Kumar,
R. Venkatesh,
V. Ganesan,
Manish Jain,
Srimanta Middey
Abstract:
The discovery of skyrmions has sparked tremendous interests about topologically nontrivial spin textures in recent times. The signature of noncoplanar nature of magnetic moments can be observed as topological Hall effect (THE) in electrical measurement. Realization of such nontrivial spin textures in new materials and through new routes is an ongoing endeavour due to their huge potential for futur…
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The discovery of skyrmions has sparked tremendous interests about topologically nontrivial spin textures in recent times. The signature of noncoplanar nature of magnetic moments can be observed as topological Hall effect (THE) in electrical measurement. Realization of such nontrivial spin textures in new materials and through new routes is an ongoing endeavour due to their huge potential for future ultra-dense low-power memory applications. In this work, we report oxygen vacancy (OV) induced THE and anomalous Hall effect (AHE) in a 5$d^0$ system KTaO$_3$. The observation of weak antilocalization behavior and THE in the same temperature range strongly implies the crucial role of spin-orbit coupling (SOC) behind the origin of THE. Ab initio calculations reveal the formation of the magnetic moment on Ta atoms around the OV and Rashba-type spin texturing of conduction electrons. In the presence of Rashba SOC, the local moments around vacancy can form bound magnetic polarons (BMP) with noncollinear spin texture, resulting THE. Scaling analysis between transverse and longitudinal resistance establishes skew scattering driven AHE in present case. Our study opens a route to realize topological phenomena through defect engineering.
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Submitted 30 May, 2020;
originally announced June 2020.
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Probing electronic and magnetic transitions of short periodic nickelate superlattices using synchrotron x-ray
Authors:
S. Middey,
Ranjan Kumar Patel,
D. Meyers,
P. Shafer,
M. Kareev,
J. W. Freeland,
J. -W. Kim,
P. J. Ryan,
J. Chakhalian
Abstract:
Transition metal based oxide heterostructures exhibit diverse emergent phenomena e.g. two dimensional electron gas, superconductivity, non-collinear magnetic phase, ferroelectricity, polar vortices, topological Hall effect etc., which are absent in the constituent bulk oxides. The microscopic understandings of these properties in such nanometer thick materials are extremely challenging. Synchrotro…
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Transition metal based oxide heterostructures exhibit diverse emergent phenomena e.g. two dimensional electron gas, superconductivity, non-collinear magnetic phase, ferroelectricity, polar vortices, topological Hall effect etc., which are absent in the constituent bulk oxides. The microscopic understandings of these properties in such nanometer thick materials are extremely challenging. Synchrotron x-ray based techniques such as x-ray diffraction, x-ray absorption spectroscopy (XAS), resonant x-ray scattering (RXS), resonant inelastic x-ray scattering (RIXS), x-ray photoemission spectroscopy, etc. are essential to elucidating the response of lattice, charge, orbital, and spin degrees of freedoms to the heterostructuring. As a prototypical case of complex behavior, rare-earth nickelates (RENiO3 with RE=La, Pr, Nd, Sm, Eu, Lu) based thin films and heterostructures have been investigated quite extensively in recent years. An extensive body of literature about these systems exists and for an overview of the field, we refer the interested readers to the recent reviews Annual Review of Materials Research 46, 305 (2016) and Reports on Progress in Physics 81, 046501 (2018). In the present article, we give a brief review that concentrates on the use of synchrotron based techniques to investigate a specific set of EuNiO3/LaNiO3 superlattices, specifically designed to solve a long-standing puzzle about the origin of simultaneous electronic, magnetic and structural transitions of the RENiO3 series.
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Submitted 6 April, 2020;
originally announced April 2020.
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Epitaxial stabilization of ultra thin films of high entropy perovskite
Authors:
Ranjan Kumar Patel,
Shashank Kumar Ojha,
Siddharth Kumar,
Akash Saha,
Prithwijit Mandal,
J. W. Freeland,
S. Middey
Abstract:
High entropy oxides (HEOs) are a class of materials, containing equimolar portions of five or more transition metal and/or rare-earth elements. We report here about the layer-by-layer growth of HEO [(La$_{0.2}$Pr$_{0.2}$Nd$_{0.2}$Sm$_{0.2}$Eu$_{0.2}$)NiO$_3$] thin films on NdGaO$_3$ substrates by pulsed laser deposition. The combined characterizations with in-situ reflection high energy electron d…
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High entropy oxides (HEOs) are a class of materials, containing equimolar portions of five or more transition metal and/or rare-earth elements. We report here about the layer-by-layer growth of HEO [(La$_{0.2}$Pr$_{0.2}$Nd$_{0.2}$Sm$_{0.2}$Eu$_{0.2}$)NiO$_3$] thin films on NdGaO$_3$ substrates by pulsed laser deposition. The combined characterizations with in-situ reflection high energy electron diffraction, atomic force microscopy, and X-ray diffraction affirm the single crystalline nature of the film with smooth surface morphology. The desired +3 oxidation of Ni has been confirmed by an element sensitive X-ray absorption spectroscopy measurement. Temperature dependent electrical transport measurements revealed a first order metal-insulator transition with the transition temperature very similar to the undoped NdNiO$_3$. Since both of these systems have a comparable tolerance factor, this work demonstrates that the electronic behaviors of $A$-site disordered perovskite-HEOs are primarily controlled by the average tolerance factor.
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Submitted 10 November, 2019;
originally announced November 2019.
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Emergent phase in short-periodic rare-earth nickelate superlattices
Authors:
S. Middey,
Ranjan Kumar Patel,
D. Meyers,
Xiaoran Liu,
M. Kareev,
P. Shafer,
J. -W. Kim,
P. J. Ryan,
J. Chakhalian
Abstract:
Heterostructure engineering provides an efficient way to obtain several unconventional phases of LaNiO3, which is otherwise paramagnetic, metallic in bulk form. In this work, a new class of short periodic superlattices, consisting of LaNiO3 and EuNiO3 have been grown by pulsed laser interval deposition to investigate the effect of structural symmetry mismatch on the electronic and magnetic behavio…
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Heterostructure engineering provides an efficient way to obtain several unconventional phases of LaNiO3, which is otherwise paramagnetic, metallic in bulk form. In this work, a new class of short periodic superlattices, consisting of LaNiO3 and EuNiO3 have been grown by pulsed laser interval deposition to investigate the effect of structural symmetry mismatch on the electronic and magnetic behaviors. Synchrotron based soft and hard X-ray resonant scattering experiments have found that these heterostructures undergo simultaneous electronic and magnetic transitions. Most importantly, LaNiO3 within these artificial structures exhibits a new antiferromagnetic, charge ordered insulating phase. This work demonstrates that emergent properties can be obtained by engineering structural symmetry mismatch across a heterointerface.
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Submitted 16 October, 2019;
originally announced October 2019.
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Cavity-control of bright and dark interlayer excitons in van der Waals heterostructures
Authors:
Michael Förg,
Léo Colombier,
Robin K. Patel,
Jessica Lindlau,
Aditya D. Mohite,
Hisato Yamaguchi,
David Hunger,
Alexander Högele
Abstract:
Monolayer (ML) transition metal dichalcogenides (TMDs) integrated in optical microcavities host exciton-polaritons as a hallmark of the strong light-matter coupling regime. Analogous concepts for hybrid light-matter systems employing spatially indirect excitons with a permanent electric dipole moment in heterobilayer (HBL) crystals promise realizations of exciton-polariton gases and condensates wi…
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Monolayer (ML) transition metal dichalcogenides (TMDs) integrated in optical microcavities host exciton-polaritons as a hallmark of the strong light-matter coupling regime. Analogous concepts for hybrid light-matter systems employing spatially indirect excitons with a permanent electric dipole moment in heterobilayer (HBL) crystals promise realizations of exciton-polariton gases and condensates with immanent dipolar interactions. Here, we identify optical signatures of spatially indirect momentum-bright and momentum-dark interlayer excitons in vertical MoSe$_2$-WSe$_2$ heterostructures and implement cavity-control of both exciton manifolds. Our experiments quantify the strength of light-matter coupling for both zero and finite momentum excitons residing in Moiré superlattices of TMD HBLs and demonstrate that both exciton species are susceptible to Purcell enhancement in cavity-modified photonic environments. Our results form the basis for further developments of dipolar exciton-polariton gases and condensates in hybrid cavity -- van der Waals heterostructure systems.
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Submitted 25 October, 2017; v1 submitted 3 October, 2017;
originally announced October 2017.
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Strong exciton-photon coupling with colloidal nanoplatelets in an open microcavity
Authors:
Lucas C. Flatten,
Sotirios Christodoulou,
Robin K. Patel,
Alexander Buccheri,
David M. Coles,
Benjamin P. L. Reid,
Robert A. Taylor,
Iwan Moreels,
Jason M. Smith
Abstract:
Colloidal semiconductor nanoplatelets exhibit quantum size effects due to their thickness of only few monolayers, together with strong optical band-edge transitions facilitated by large lateral extensions. In this article we demonstrate room temperature strong coupling of the light and heavy hole exciton transitions of CdSe nanoplatelets with the photonic modes of an open planar microcavity. Vacuu…
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Colloidal semiconductor nanoplatelets exhibit quantum size effects due to their thickness of only few monolayers, together with strong optical band-edge transitions facilitated by large lateral extensions. In this article we demonstrate room temperature strong coupling of the light and heavy hole exciton transitions of CdSe nanoplatelets with the photonic modes of an open planar microcavity. Vacuum Rabi splittings of $66 \pm 1$ meV and $58 \pm 1$ meV are observed for the heavy and light hole excitons respectively, together with a polariton-mediated hybridisation of both transitions. By measuring the concentration of platelets in the film we compute the transition dipole moment of a nanoplatelet exciton to be $μ= (575 \pm 110)$ D. The large oscillator strength and fluorescence quantum yield of semiconductor nanoplatelets provide a perspective towards novel photonic devices, combining polaritonic and spinoptronic effects.
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Submitted 18 August, 2016;
originally announced August 2016.
