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4H-SiC Schottky diode radiation hardness assessment by IBIC microscopy
Authors:
Ettore Vittone,
Paolo Olivero,
Milko Jaksic,
Zeljko Pastuovic
Abstract:
We report findings on the Ion Beam Induced Charge (IBIC) characterization of a 4H-SiC Schottky barrier diode (SBD), in terms of the modification of the Charge Collection Efficiency (CCE) distribution induced by 20 MeV C ions irradiations with fluences ranging from 20 to 200 ions/um2. The lateral IBIC microscopy with 4 MeV protons over the SBD cross section, carried out on the pristine diode eviden…
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We report findings on the Ion Beam Induced Charge (IBIC) characterization of a 4H-SiC Schottky barrier diode (SBD), in terms of the modification of the Charge Collection Efficiency (CCE) distribution induced by 20 MeV C ions irradiations with fluences ranging from 20 to 200 ions/um2. The lateral IBIC microscopy with 4 MeV protons over the SBD cross section, carried out on the pristine diode evidenced the widening of the depletion layer extension as function of the applied bias and allowed the measurement of the minority carrier diffusion lengths. After the irradiation with C ions, lateral IBIC showed a significant modification of the CCE distribution, with a progressive shrinkage of the depletion layer as the fluence of the damaging C ions increases. A simple electrostatic model ruled out that the shrinkage is due to the implanted charge and ascribed the perturbation of the electrostatic landscape to radiation-induced defects with positive charge state.
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Submitted 10 November, 2022;
originally announced November 2022.
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Increased Phase Coherence Length in a Porous Topological Insulator
Authors:
Alex Nguyen,
Golrokh Akhgar,
David L. Cortie,
Abdulhakim Bake,
Zeljko Pastuovic,
Weiyao Zhao,
Chang Liu,
Yi-Hsun Chen,
Kiyonori Suzuki,
Michael S. Fuhrer,
Dimitrie Culcer,
Alexander R. Hamilton,
Mark T. Edmonds,
Julie Karel
Abstract:
The surface area of Bi2Te3 thin films was increased by introducing nanoscale porosity. Temperature dependent resistivity and magnetotransport measurements were conducted both on as-grown and porous samples (23 and 70 nm). The longitudinal resistivity of the porous samples became more metallic, indicating the increased surface area resulted in transport that was more surface-like. Weak antilocaliza…
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The surface area of Bi2Te3 thin films was increased by introducing nanoscale porosity. Temperature dependent resistivity and magnetotransport measurements were conducted both on as-grown and porous samples (23 and 70 nm). The longitudinal resistivity of the porous samples became more metallic, indicating the increased surface area resulted in transport that was more surface-like. Weak antilocalization (WAL) was present in all samples, and remarkably the phase coherence length doubled in the porous samples. This increase is likely due to the large Fermi velocity of the Dirac surface states. Our results show that the introduction of nanoporosity does not destroy the topological surface states but rather enhances them, making these nanostructured materials promising for low energy electronics, spintronics and thermoelectrics.
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Submitted 21 May, 2022;
originally announced May 2022.
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The M-center in 4H-SiC is a carbon self-interstitial
Authors:
J. Coutinho,
J. D. Gouveia,
T. Makino,
T. Ohshima,
Ž. Pastuović,
L. Bakrač,
T. Brodar,
I. Capan
Abstract:
The list of semiconductor materials with spectroscopically fingerprinted self-interstitials is very short. The M-center in 4H-SiC, a bistable defect responsible for a family of electron traps, has been deprived of a model which could unveil its real importance for almost two decades. Using advanced first-principles calculations and junction spectroscopy, we demonstrate that the properties of M, in…
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The list of semiconductor materials with spectroscopically fingerprinted self-interstitials is very short. The M-center in 4H-SiC, a bistable defect responsible for a family of electron traps, has been deprived of a model which could unveil its real importance for almost two decades. Using advanced first-principles calculations and junction spectroscopy, we demonstrate that the properties of M, including bistability, annealing, reconfiguration kinetics, and electronic levels, match those of the carbon self-interstitial.
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Submitted 29 May, 2021; v1 submitted 10 May, 2021;
originally announced May 2021.
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Silicon carbide diodes for neutron detection
Authors:
José Coutinho,
Vitor J. B. Torres,
Ivana Capan,
Tomislav Brodar,
Zoran Ereš,
Robert Bernat,
Vladimir Radulović,
Klemen Ambrožič,
Luka Snoj,
Željko Pastuović,
Adam Sarbutt,
Takeshi Ohshima,
Yuichi Yamazaki,
Takahiro Makino
Abstract:
In the last two decades we have assisted to a rush towards finding a He3-replacing technology capable of detecting neutrons emitted from fissile isotopes. The demand stems from applications like nuclear war-head screening or preventing illicit traffic of radiological materials. Semiconductor detectors stand among the stronger contenders, particularly those based on materials possessing a wide band…
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In the last two decades we have assisted to a rush towards finding a He3-replacing technology capable of detecting neutrons emitted from fissile isotopes. The demand stems from applications like nuclear war-head screening or preventing illicit traffic of radiological materials. Semiconductor detectors stand among the stronger contenders, particularly those based on materials possessing a wide band gap like silicon carbide. We review the workings of SiC-based neutron detectors, along with several issues related to material properties, device fabrication and testing. The paper summarizes the experimental and theoretical work carried out within the E-SiCure project, co-funded by the NATO SPS Programme. Among the achievements, we have the development of successful Schottky barrier based detectors and the identification of the main carrier life-time-limiting defects in the SiC active areas, either already present in pristine devices or introduced upon exposure to radiation fields. The physical processes involved in neutron detection are described. Material properties as well as issues related to epitaxial growth and device fabrication are addressed. The presence of defects in as-grown material, as well as those introduced by ionizing radiation are reported. We finally describe several experiments carried out at the Jozef Stefan Institute TRIGA Mark II reactor (Ljubljana, Slovenia), where a set of SiC-based neutron detectors were tested, some of which being equipped with a thermal neutron converter layer. We show that despite the existence of large room for improvement, Schottky barrier diodes based on state-of-the-art 4H-SiC are closing the gap regarding the sensitivity offered by gas-based and that of semiconductor detectors.
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Submitted 30 October, 2020; v1 submitted 30 September, 2020;
originally announced September 2020.
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Biocompatible technique for nanoscale magnetic field sensing with Nitrogen-Vacancy centers
Authors:
Ettore Bernardi,
Ekaterina Moreva,
Paolo Traina,
Giulia Petrini,
Sviatoslav Ditalia Tchernij,
Jacopo Forneris,
Zelijko Pastuovic,
Ivo Pietro Degiovanni,
Paolo Olivero,
M. Genovese
Abstract:
The possibility of using Nitrogen-vacancy centers in diamonds to measure nanoscale magnetic fields with unprecedented sensitivity is one of the most significant achievements of quantum sensing. Here we present an innovative experimental set-up, showing an achieved sensitivity comparable to the state of the art ODMR protocols if the sensing volume is taken into account. The apparatus allows magneti…
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The possibility of using Nitrogen-vacancy centers in diamonds to measure nanoscale magnetic fields with unprecedented sensitivity is one of the most significant achievements of quantum sensing. Here we present an innovative experimental set-up, showing an achieved sensitivity comparable to the state of the art ODMR protocols if the sensing volume is taken into account. The apparatus allows magnetic sensing in biological samples such as individual cells, as it is characterized by a small sensing volume and full bio-compatibility. The sensitivity at different optical powers is studied to extend this technique to the intercellular scale.
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Submitted 16 June, 2020; v1 submitted 27 May, 2020;
originally announced May 2020.
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Practical applications of quantum sensing: a simple method to enhance sensitivity of Nitrogen-Vacancy-based temperature sensors
Authors:
E. Moreva,
E. Bernardi,
P. Traina,
A. Sosso,
S. Ditalia Tchernij,
J. Forneris,
F. Picollo,
G. Brida,
Z. Pastuovic,
I. P. Degiovanni,
P. Olivero,
M. Genovese
Abstract:
Nitrogen-vacancy centers in diamond allow measurement of environment properties such as temperature, magnetic and electric fields at nanoscale level, of utmost relevance for several research fields, ranging from nanotechnologies to bio-sensing. The working principle is based on the measurement of the resonance frequency shift of a single nitrogen-vacancy center (or an ensemble of them), usually de…
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Nitrogen-vacancy centers in diamond allow measurement of environment properties such as temperature, magnetic and electric fields at nanoscale level, of utmost relevance for several research fields, ranging from nanotechnologies to bio-sensing. The working principle is based on the measurement of the resonance frequency shift of a single nitrogen-vacancy center (or an ensemble of them), usually detected by by monitoring the center photoluminescence emission intensity. Albeit several schemes have already been proposed, the search for the simplest and most effective one is of key relevance for real applications. Here we present a new continuous-wave lock-in based technique able to reach unprecedented sensitivity in temperature measurement at micro/nanoscale volumes (4.8 mK/Hz$^{1/2}$ in $μ$m$^3$). Furthermore, the present method has the advantage of being insensitive to the enviromental magnetic noise, that in general introduces a bias in the temperature measurement.
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Submitted 23 December, 2019;
originally announced December 2019.
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Formation of buried conductive micro-channels in single crystal diamond with MeV C and He implantation
Authors:
F. Picollo,
P. Olivero,
F. Bellotti,
Ž. Pastuović,
N. Skukan,
A. Lo Giudice,
G. Amato,
M. Jakšić,
E. Vittone
Abstract:
As demonstrated in previous works, implantation with a MeV ion microbeam through masks with graded thickness allows the formation of conductive micro-channels in diamond which are embedded in the insulating matrix at controllable depths [P. Olivero et al., Diamond Relat. Mater. 18 (5-8), 870-876 (2009)]. In the present work we report about the systematic electrical characterization of such micro-c…
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As demonstrated in previous works, implantation with a MeV ion microbeam through masks with graded thickness allows the formation of conductive micro-channels in diamond which are embedded in the insulating matrix at controllable depths [P. Olivero et al., Diamond Relat. Mater. 18 (5-8), 870-876 (2009)]. In the present work we report about the systematic electrical characterization of such micro-channels as a function of several implantation conditions, namely: ion species and energy, implantation fluence. The current-voltage (IV) characteristics of the buried channels were measured at room temperature with a two point probe station. Significant parameters such as the sheet resistance and the characteristic exponent (alpha) of the IV power-law trend were expressed as a function of damage density, with satisfactory compatibility between the results obtained in different implantation conditions.
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Submitted 9 September, 2016;
originally announced September 2016.
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Semiconductor characterization by scanning ion beam induced charge (IBIC) microscopy
Authors:
E. Vittone,
Z. Pastuovic,
P. Olivero,
C. Manfredotti,
M. Jaksic,
A. Lo Giudice,
F. Fizzotti,
E. Colombo
Abstract:
The acronym IBIC (Ion Beam Induced Charge) was coined in early 1990's to indicate a scanning microscopy technique which uses MeV ion beams as probes to image the basic electronic properties of semiconductor materials and devices. Since then, IBIC has become a widespread analytical technique to characterize materials for electronics or for radiation detection, as testified by more than 200 papers p…
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The acronym IBIC (Ion Beam Induced Charge) was coined in early 1990's to indicate a scanning microscopy technique which uses MeV ion beams as probes to image the basic electronic properties of semiconductor materials and devices. Since then, IBIC has become a widespread analytical technique to characterize materials for electronics or for radiation detection, as testified by more than 200 papers published so far in peer-reviewed journals. Its success stems from the valuable information IBIC can provide on charge transport phenomena occurring in finished devices, not easily obtainable by other analytical techniques. However, IBIC analysis requires a robust theoretical background to correctly interpret experimental data. In order to illustrate the importance of using a rigorous mathematical formalism, we present in this paper a benchmark IBIC experiment aimed to test the validity of the interpretative model based on the Gunn's theorem and to provide an example of the analytical capability of IBIC to characterize semiconductor devices.
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Submitted 1 September, 2016;
originally announced September 2016.
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Charge collection efficiency map** of interdigitated 4H-SiC detectors
Authors:
E. Vittone,
N. Skukan,
Z. Pastuovic,
P. Olivero,
M. Jaksic
Abstract:
The Ion Beam Induced Charge Collection (IBIC) technique was used to map the charge collection efficiency (CCE) of a 4H-SiC photodetector with coplanar interdigitated Schottky barrier electrodes and a common ohmic contact on the back side. IBIC maps were obtained using focused proton beams with energies of 0.9 MeV and 1.5 MeV, at different bias voltages and different sensitive electrode configurati…
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The Ion Beam Induced Charge Collection (IBIC) technique was used to map the charge collection efficiency (CCE) of a 4H-SiC photodetector with coplanar interdigitated Schottky barrier electrodes and a common ohmic contact on the back side. IBIC maps were obtained using focused proton beams with energies of 0.9 MeV and 1.5 MeV, at different bias voltages and different sensitive electrode configurations (charge collection at the top Schottky or at the back Ohmic contact). These different experimental conditions have been modeled using a two dimensional finite element code to solve the adjoint carrier continuity equations and the results obtained have been compared with experimental results. The excellent consistency between the simulated and experimental CCE maps allows an exhaustive interpretation of the charge collection mechanisms occurring in pixellated or strip detectors.
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Submitted 26 August, 2016;
originally announced August 2016.
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Monte Carlo analysis of a lateral IBIC experiment on a 4H-SiC Schottky diode
Authors:
P. Olivero,
J. Forneris,
P. Gamarra,
M. Jaksic,
A. Lo Giudice,
C. Manfredotti,
Z. Pastuovic,
N. Skukan,
E. Vittone
Abstract:
The transport properties of a 4H-SiC Schottky diode have been investigated by the Ion Beam Induced Charge (IBIC) technique in lateral geometry through the analysis of the charge collection efficiency (CCE) profile at a fixed applied reverse bias voltage. The cross section of the sample orthogonal to the electrodes was irradiated by a rarefied 4 MeV proton microbeam and the charge pulses have been…
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The transport properties of a 4H-SiC Schottky diode have been investigated by the Ion Beam Induced Charge (IBIC) technique in lateral geometry through the analysis of the charge collection efficiency (CCE) profile at a fixed applied reverse bias voltage. The cross section of the sample orthogonal to the electrodes was irradiated by a rarefied 4 MeV proton microbeam and the charge pulses have been recorded as function of incident proton position with a spatial resolution of 2 um. The CCE profile shows a broad plateau with CCE values close to 100% occurring at the depletion layer, whereas in the neutral region, the exponentially decreasing profile indicates the dominant role played by the diffusion transport mechanism. Map** of charge pulses was accomplished by a novel computational approach, which consists in map** the Gunn's weighting potential by solving the electrostatic problem by finite element method and hence evaluating the induced charge at the sensing electrode by a Monte Carlo method. The combination of these two computational methods enabled an exhaustive interpretation of the experimental profiles and allowed an accurate evaluation both of the electrical characteristics of the active region (e.g. electric field profiles) and of basic transport parameters (i. e. diffusion length and minority carrier lifetime).
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Submitted 29 August, 2016;
originally announced August 2016.
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Focused ion beam fabrication and IBIC characterization of a diamond detector with buried electrodes
Authors:
P. Olivero,
J. Forneris,
M. Jaksic,
Z. Pastuovic,
F. Picollo,
N. Skukan,
E. Vittone
Abstract:
This paper reports on the fabrication and characterization of a high purity monocrystalline diamond detector with buried electrodes realized by the selective damage induced by a focused 6 MeV carbon ion beam scanned over a pattern defined at the micrometric scale. A suitable variable-thickness mask was deposited on the diamond surface in order to modulate the penetration depth of the ions and to s…
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This paper reports on the fabrication and characterization of a high purity monocrystalline diamond detector with buried electrodes realized by the selective damage induced by a focused 6 MeV carbon ion beam scanned over a pattern defined at the micrometric scale. A suitable variable-thickness mask was deposited on the diamond surface in order to modulate the penetration depth of the ions and to shallow the damage profile toward the surface. After the irradiation, the sample was annealed at high temperature in order to promote the conversion to the graphitic phase of the end-of-range regions which experienced an ion-induced damage exceeding the damage threshold, while recovering the sub-threshold damaged regions to the highly resistive diamond phase. This process provided conductive graphitic electrodes embedded in the insulating diamond matrix; the presence of the variable-thickness mask made the terminations of the channels emerging at the diamond surface and available to be connected to an external electronic circuit. In order to evaluate the quality of this novel microfabrication procedure based on direct ion writing, we performed frontal Ion Beam Induced Charge (IBIC) measurements by raster scanning focused MeV ion beams onto the diamond surface. Charge collection efficiency (CCE) maps were measured at different bias voltages. The interpretation of such maps was based on the Shockley-Ramo-Gunn formalism.
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Submitted 25 August, 2016;
originally announced August 2016.
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Direct fabrication of three-dimensional buried conductive channels in single crystal diamond with ion microbeam induced graphitization
Authors:
P. Olivero,
G. Amato,
F. Bellotti,
O. Budnyk,
E. Colombo,
M. Jaksic,
A. Lo Giudice,
C. Manfredotti,
Z. Pastuovic,
F. Picollo,
N. Skukan,
M. Vannoni,
E. Vittone
Abstract:
We report on a novel method for the fabrication of three-dimensional buried graphitic micropaths in single crystal diamond with the employment of focused MeV ions. The use of implantation masks with graded thickness at the sub-micrometer scale allows the formation of conductive channels which are embedded in the insulating matrix at controllable depths. In particular, the modulation of the channel…
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We report on a novel method for the fabrication of three-dimensional buried graphitic micropaths in single crystal diamond with the employment of focused MeV ions. The use of implantation masks with graded thickness at the sub-micrometer scale allows the formation of conductive channels which are embedded in the insulating matrix at controllable depths. In particular, the modulation of the channels depth at their endpoints allows the surface contacting of the channel terminations with no need of further fabrication stages. In the present work we describe the sample masking, which includes the deposition of semi spherical gold contacts on the sample surface, followed by MeV ion implantation. Because of the significant difference between the densities of pristine and amorphous or graphitized diamond, the formation of buried channels has a relevant mechanical effect on the diamond structure, causing localized surface swelling, which has been measured both with interferometric profilometry and atomic force microscopy. The electrical properties of the buried channels are then measured with a two point probe station: clear evidence is given that only the terminal points of the channels are electrically connected with the surface, while the rest of the channels extends below the surface. IV measurements are employed also to qualitatively investigate the electrical properties of the channels as a function of implantation fluence and annealing.
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Submitted 26 August, 2016;
originally announced August 2016.
